JPH01287278A - Formation of thin ito film - Google Patents
Formation of thin ito filmInfo
- Publication number
- JPH01287278A JPH01287278A JP11794788A JP11794788A JPH01287278A JP H01287278 A JPH01287278 A JP H01287278A JP 11794788 A JP11794788 A JP 11794788A JP 11794788 A JP11794788 A JP 11794788A JP H01287278 A JPH01287278 A JP H01287278A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- group
- film
- methoxide
- butoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229960005235 piperonyl butoxide Drugs 0.000 claims abstract description 15
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 claims abstract description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- NBTOZLQBSIZIKS-UHFFFAOYSA-N methoxide Chemical compound [O-]C NBTOZLQBSIZIKS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 5
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 claims abstract description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims abstract 2
- 150000001875 compounds Chemical class 0.000 claims description 27
- 239000011259 mixed solution Substances 0.000 claims description 18
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 16
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 13
- 238000010304 firing Methods 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- IKNCGYCHMGNBCP-UHFFFAOYSA-N propan-1-olate Chemical compound CCC[O-] IKNCGYCHMGNBCP-UHFFFAOYSA-N 0.000 claims description 8
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- DUFKCOQISQKSAV-UHFFFAOYSA-N Polypropylene glycol (m w 1,200-3,000) Chemical group CC(O)COC(C)CO DUFKCOQISQKSAV-UHFFFAOYSA-N 0.000 claims description 3
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
- CAFAOQIVXSSFSY-UHFFFAOYSA-N 1-ethoxyethanol Chemical group CCOC(C)O CAFAOQIVXSSFSY-UHFFFAOYSA-N 0.000 claims 2
- GEGLCBTXYBXOJA-UHFFFAOYSA-N 1-methoxyethanol Chemical compound COC(C)O GEGLCBTXYBXOJA-UHFFFAOYSA-N 0.000 claims 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 10
- 230000007062 hydrolysis Effects 0.000 abstract description 4
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- 229910052718 tin Inorganic materials 0.000 abstract description 2
- 150000001412 amines Chemical class 0.000 abstract 3
- 238000004299 exfoliation Methods 0.000 abstract 2
- 238000002834 transmittance Methods 0.000 abstract 2
- 238000001354 calcination Methods 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000002156 mixing Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- -1 1-cyto Chemical compound 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- SDTMFDGELKWGFT-UHFFFAOYSA-N 2-methylpropan-2-olate Chemical compound CC(C)(C)[O-] SDTMFDGELKWGFT-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004859 Copal Substances 0.000 description 1
- 241000782205 Guibourtia conjugata Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005083 alkoxyalkoxy group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- CBCIHIVRDWLAME-UHFFFAOYSA-N hexanitrodiphenylamine Chemical group [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1NC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O CBCIHIVRDWLAME-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、液晶表示素子、エレクl〜ロルミネセンス
表示素子等の表示素子類の電極として適し、また、光電
池、撮像管等の感光素子類の電極として適し、さらに、
自動車、航空機、建築構造物等の防曇、防水用窓ガラス
の抵抗体等として適したI T O(Indium T
i+)Oxide)の薄膜を基体上に形成する方法に関
する。DETAILED DESCRIPTION OF THE INVENTION Industrial Field of Application The present invention is suitable as an electrode for display elements such as liquid crystal display elements and electroluminescence display elements, and as an electrode for photosensitive elements such as photovoltaic cells and image pickup tubes. Suitable, furthermore,
ITO (Indium T
The present invention relates to a method for forming a thin film of i+) oxide on a substrate.
従来の技術
In2O3に少量の3nを固溶せしめてなるITO薄膜
を基体上に形成する方法は、いろいろおる。Prior Art There are various methods for forming an ITO thin film on a substrate by dissolving a small amount of 3n in In2O3.
たとえば、第26回窯業基礎討論会講演要旨集、第15
9頁(1988年)には、InCl3と、5nC1qと
の水溶液をアンモニア水に滴下して水和物の微粒子とな
し、これを遠心分離した後水洗、乾燥して粉末となし、
これを蒸留水中に分散せしめ、さらにポリビニルアルコ
ールを加えてペースト状にしたものをガラス基体上に塗
布し、乾燥し、焼成してITO博膜とする方法が記載さ
れている。しかしながら、この方法は、InCl3やs
nc l 4といった無機塩の水溶液を用い、−旦粉末
にした後にペース1へ状にして塗布するので、薄膜が白
濁して半透明になったり、基体への(=lI着力が弱く
て薄膜が容易に剥がれ落ちるといった問題がある。For example, the 26th Ceramics Industry Basics Conference Lecture Abstracts, No. 15
9 (1988), an aqueous solution of InCl3 and 5nC1q was dropped into aqueous ammonia to form hydrated fine particles, which were centrifuged, washed with water, and dried to form a powder.
A method is described in which the paste is dispersed in distilled water and polyvinyl alcohol is added to form a paste, which is then applied onto a glass substrate, dried, and fired to obtain an ITO film. However, this method is not suitable for InCl3 or s
Since an aqueous solution of an inorganic salt such as nc l 4 is first powdered and then applied in the form of paste 1, the thin film may become cloudy and translucent, or the adhesion to the substrate may be weak and the thin film may There is a problem that it easily peels off.
発明が解決しようとする課題
この発明の目的は、従来の方法の上述した問題点を解決
し、基体上に、透光性に優れ、しかも、容易に剥がれ落
らることのないIT(]ij膜を形成する方法を提供す
るにある、。Problems to be Solved by the Invention The purpose of the present invention is to solve the above-mentioned problems of the conventional method and to provide an IT(]ij To provide a method for forming a film.
課題を解決するための手段
上記目的を達成するために、この発明にa3いては、下
記A群、8群、0群およびD群からそれぞれ選ばれた化
合物を含む混合溶液を調製する工程と、
A群:Inの、メ1〜キシド、工1〜=1−シト、プロ
ポキシド、ブトキシド、メl〜キシエ1ヘキシドまたは
工1〜キシエ]ヘキシト
B群:Snの、メトキシド、工!・キシド、ブ[1ボキ
シド、ブトキシド、メ1〜キシエ1〜キシドまたは工1
〜キシエトキシト
0群:モノエタノールアミン、ジェタノールアミン、1
〜リエタノールアミン、七)2−プロパノールアミン、
ジ2−プロパツールアミン、アセデルアセ1〜ン、]ニ
チレンクリ]−ル、ジエチレングリコール、プロピレン
グリコール、ジプロピレングリコール
D群:メタノール、エタノール、プロパノール、ブタノ
ール、メトキシエタノール、工1〜キシエタノール
耐熱性基体上に上記混合溶液の薄膜を形成する工程と、
上記薄膜を乾燥する工程と、
上記乾燥薄膜を酸化性雰囲気中で焼成する工程と、
を含む、ITO薄膜の形成方法が提供される。Means for Solving the Problems In order to achieve the above object, the present invention includes a3 a step of preparing a mixed solution containing a compound selected from the following groups A, 8, 0 and D, respectively; Group A: In, methoxide, 1-cyto, propoxide, butoxide, methoxide, 1-hexide or 1-xyel]hexite Group B: Methoxide, 1-cyto of Sn;・Xide, Butoxide, Butoxide, Me1~Xie1~Xide or
~Xyethoxyto group 0: monoethanolamine, jetanolamine, 1
~liethanolamine, 7) 2-propanolamine,
Di-2-propanolamine, acedelacetin, nethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol Group D: methanol, ethanol, propanol, butanol, methoxyethanol, polyoxyethanol on a heat-resistant substrate A method for forming an ITO thin film is provided, which includes the steps of: forming a thin film of the mixed solution; drying the thin film; and firing the dried thin film in an oxidizing atmosphere.
以下、この発明を各工程別にさらに詳しく説明する。Hereinafter, this invention will be explained in more detail for each step.
混合溶液の調製工程:
この発明においては、まず、下記の△、B、C1D各鮮
から選ばれた化合物を含む混合溶液を調製する。Preparation process of mixed solution: In this invention, first, a mixed solution containing a compound selected from the following Δ, B, and C1D is prepared.
A群:Inの、メ1−ギシド、エトキシド、プロポキシ
ド、ブトキシド、メ1ヘキシエ1〜ギシドまたは工1ヘ
キシエ1へキシ1
8群;Snの、メ1〜キシド、■1〜キシド、プロポキ
シド、ブトキシド、メ1〜キシエ1〜キシドまたは工1
ヘキシエ1〜キシド
= 5 =
0群;モノエタノールアミン、ジェタノールアミン、1
〜リエタノールアミン、モノ2−プロパノールアミン、
ジ2−ブl]パノールアミン、アセチルアセトン、エチ
レンクリコール、ジエチレングリコール、プロピレング
リコール、ジプロピレングリコール
D群:メタノール、エタノール、プロパノール、ブタノ
ール、メトキシエタノール、工1〜キシエタノール
上記A、B各群におりるプ[1ポキシドは、1−プロポ
キシド、2−プロポキシドのいずれておってもよい。ま
た、ブ1〜ギシドは、1−ブI〜キシド、2−ブトキシ
ド、イソブトキシド、t−ブ1−キシドのいずれであっ
てもよい、1さらに、D群のブ[]パノールは、1−プ
ロパノール、2−ブに1パノールのいずれであってもよ
い。さらにまた、ブタノールは、1−ブタノール、2−
ブタノール、イソブタノール、1X−ブタノールのいず
れであってもよい。Group A: In, Me1-Gyside, Ethoxide, Propoxide, Butoxide, Me1-Hexy1-Gyside or Tech1-Hexy-1 Hexy1 Group 8; Sn, Me1-Gyside, ■1-oxide, Propoxide , butoxide, me1~xie1~oxide or
Hexie 1 to oxide = 5 = 0 group; monoethanolamine, jetanolamine, 1
~liethanolamine, mono-2-propanolamine,
di-2-butyl]panolamine, acetylacetone, ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol Group D: methanol, ethanol, propanol, butanol, methoxyethanol, etc. The propoxide may be either 1-propoxide or 2-propoxide. In addition, Bu[]-gide may be any of 1-butoxide, 2-butoxide, isobutoxide, and t-butoxide. It may be either propanol or 2-propanol. Furthermore, butanol includes 1-butanol, 2-butanol,
It may be any of butanol, isobutanol, and 1X-butanol.
= 6−
0群の化合物は、焼成に至るまでの各工程において、加
水分解によってインジウムや錫が微粒子状の水酸化物や
酸化物として析出するのを抑制するものでおる。また、
D群の化合物は、溶媒として作用するものである。The compounds of the = 6-0 group suppress the precipitation of indium and tin as particulate hydroxides and oxides due to hydrolysis in each step up to firing. Also,
Group D compounds are those that act as solvents.
△、B、C,Dの各群からは、1種を選択、使用する。One type is selected and used from each group of Δ, B, C, and D.
2種以上を選択、使用することも可能ではあるが、そう
しても得られる薄膜に特性上の有意差はほとんど認めら
れず、工程の複雑化等にJこるロス1〜上昇など、不都
合のほうがよほど大きい。Although it is possible to select and use two or more types, there is almost no significant difference in the properties of the resulting thin film, and there are many disadvantages such as complicating the process and increasing loss. It's much bigger.
また、A、B各群からは、どの化合物を選択しても、得
られる薄膜に特性上の有意差はほとんど認められない。Further, no matter which compound is selected from each group A and B, there is hardly any significant difference in properties between the obtained thin films.
すなわち、アルコキシ基やアルコキシアルコキシ基の相
異による、得られる薄膜の特性上の有意差はけと/Vど
認められない。That is, no significant difference in properties of the resulting thin film due to differences in alkoxy groups or alkoxyalkoxy groups was observed.
同様に、C,D各群からどの化合物を選択しても、得ら
れる薄膜の特性上の有意差はほとんど認められない。Similarly, no matter which compound is selected from Groups C and D, there is almost no significant difference in the properties of the resulting thin film.
A、B、C,D各群の化合物の混合割合は、それらの種
類によって多少異なるものの、Δ群の化合物をaモル、
B群の化合物をbモル、0群の化合物Cモル、D群の化
合物をdリン1ヘルとしたとき、式、
0.1≦fc/ (a十b)]]≦0
0.01≦[(a十b) /d ] ≦3を同時に満足
する範囲て必るのが好ましい。[C/ (a十b)]
<0.1では、A、B各群の化合物の加水分解を十分に
抑制できないことがある1゜また、[c/ (a+b’
)] >10では、混合溶液の粘度が高くなりすぎて製
膜できないことがある。Although the mixing ratio of the compounds of each group A, B, C, and D differs slightly depending on their type, the compound of the Δ group is a mole,
When the compound of group B is b mol, the compound of group 0 is C mol, and the compound of group D is d phosphorus 1 her, the formula is, 0.1≦fc/ (a + b)]≦0 0.01≦[ (a+b)/d ] ≦3 is preferably satisfied at the same time. [C/ (a + b)]
<0.1, it may not be possible to sufficiently suppress the hydrolysis of the compounds of each group A and B.
)]>10, the viscosity of the mixed solution may become too high to form a film.
さらに、[(a+b>/d] <0.01て゛は、溶媒
が多すぎて実用的でない。また、[(a−+−b)/d
l>3では、A、B各群の化合物が溶り残ることがある
。Furthermore, [(a+b>/d]<0.01 is not practical because there is too much solvent. Also, [(a-+-b)/d
When l>3, compounds of each group A and B may remain dissolved.
また、A、B各群の化合物の混合割合は、0.05≦[
b/ (a+b)]]≦、 2であるのが好ましい。こ
の範囲外では、得られる薄膜の導電性が悪くなる。In addition, the mixing ratio of the compounds of each group A and B is 0.05≦[
b/(a+b)]]≦2. Outside this range, the resulting thin film will have poor conductivity.
混合操作は、0群の化合物とD群の化合物との混合溶液
にA、B各群の化合物を同時に添加、混合することであ
ってもよく、また、0群の化合物とD群の化合物との混
合溶液にA、B各群の化合物を添加してなる溶液を別々
に調製し、各溶液から所定量を採取して混合することで
あってもよい。The mixing operation may be to simultaneously add and mix the compounds of each group A and B to a mixed solution of the compound of group 0 and the compound of group D, or the compound of group 0 and the compound of group D may be mixed together. It is also possible to separately prepare solutions by adding the compounds of each group A and B to a mixed solution of , and then take a predetermined amount from each solution and mix them.
なお、混合操作が完了するまでは、△、B各群の化合物
を極力湿気に晒さないよにするのが好まく、乾燥窒素な
どで置換したグラブボックス内等で行うのが好ましい。Note that until the mixing operation is completed, it is preferable to avoid exposing the compounds of each group Δ and B to moisture as much as possible, and it is preferable to carry out the mixing in a glove box purged with dry nitrogen or the like.
しかしながら、それ以後の操作は大気中で行うことがで
きる。However, further operations can be carried out in air.
混合溶液の薄膜形成工程:
この発明においては、次に、耐熱性基体上に上記混合溶
液の薄膜を形成する。つまり、製膜する。Step of forming a thin film of the mixed solution: In the present invention, next, a thin film of the mixed solution is formed on the heat-resistant substrate. In other words, a film is formed.
基体は、後述する焼成温度に耐えるものであればよく、
ニッケル、コパル1〜、クロム、チタン、金、銀、白金
などの金属や、これら金属の少なくも1種を主成分とす
る合金や、ガラス、炭素、グーイ素、シ1ツカ、アルミ
ナ、マグネシア、ジルコニア、ヂタニア、窒化ホウ素、
窒化グイ素、炭化ホウ素などの無機質材料を使用り−る
ことができる。。The substrate may be of any type as long as it can withstand the firing temperature described below.
Metals such as nickel, copal, chromium, titanium, gold, silver, platinum, alloys containing at least one of these metals as a main component, glass, carbon, gooey element, silver, alumina, magnesia, Zirconia, ditania, boron nitride,
Inorganic materials such as phosphorus nitride and boron carbide can be used. .
形状は、繊維状、フィルム状、板状、バルク状など、い
ずれであってもよい。これらの基体【、Jl、その表面
を研磨して平滑にしたり、洗浄して油分などによる汚れ
を除去したりしてi15<のが好ましい。The shape may be fibrous, film, plate, bulk, or the like. It is preferable that the surface of these substrates [, Jl, i15<] is polished to make it smooth, or washed to remove stains due to oil or the like.
薄膜の形成は、刷毛、ローラー等による塗布や、スプレ
ーによる塗イ5や、混合溶液に基体を浸漬した後引き上
げるデイツプコーティング法等によることが出来る。な
かでも、簡単で、しかも膜厚を比較的自由に変え得ると
いう意味で、デイツプコーディング法によるのが好まし
い。The thin film can be formed by coating with a brush, roller, etc., by spray coating, or by a dip coating method in which the substrate is immersed in a mixed solution and then pulled up. Among these, the dip coding method is preferred because it is simple and allows the film thickness to be changed relatively freely.
乾燥工程;
この発明においては、次に、基体上に形成した薄膜を乾
燥し、D群の化合物を蒸発させてΔ、B、C各群の化合
物からなるゲル化薄膜とする1、この工程は、常温で行
ってもJ:り、50−100°C程度の恒温下で行って
もよい。Drying step: In this invention, next, the thin film formed on the substrate is dried, and the compound of group D is evaporated to form a gelled thin film consisting of compounds of groups Δ, B, and C. It may be carried out at room temperature or at a constant temperature of about 50-100°C.
焼成工程:
この発明においては、次に、上記乾燥薄膜を酸化性雰囲
気中にて基体ごと焼成し、有機成分を分解して飛ばすと
ともに、A、B各4¥の化合物を酸化さける。かくして
、1TO薄膜か得られる。この焼成は、たとえば次のよ
うにして行う。Firing step: In the present invention, the dried thin film is then fired together with the substrate in an oxidizing atmosphere to decompose and blow off the organic components and to avoid oxidation of the compounds A and B each of 4 yen. Thus, a 1TO thin film is obtained. This firing is performed, for example, as follows.
ずなわち、薄膜を基体ごと加熱炉に入れ、酸化性雰囲気
中で焼成温度まで昇温し、その温度に一定時間保持した
後、室温まで冷却する。焼成雰囲気は、空気か、20−
100%の濃度の酸素とする。また、焼成は、400〜
900′Cで5〜1000分程度行う。焼成温度が40
0°C未満ては、有機成分を完全に取り除くことができ
ないことがある。また、900°Cを越えると、薄膜が
一部溶解したり、蒸発したりすることがおる。That is, the thin film is placed together with the substrate in a heating furnace, heated to a firing temperature in an oxidizing atmosphere, maintained at that temperature for a certain period of time, and then cooled to room temperature. The firing atmosphere is air or 20-
The concentration of oxygen is 100%. Also, firing is from 400~
It is carried out at 900'C for about 5 to 1000 minutes. Firing temperature is 40
If the temperature is below 0°C, it may not be possible to completely remove organic components. Furthermore, if the temperature exceeds 900°C, the thin film may partially dissolve or evaporate.
実施例
実施例 1
乾燥窒素を流しているグラブボックス内で、Inのブト
キシドを0.018モル、3nのブトキシドを0000
2モルh」り取り、これにジェタノールアミンを0.0
2モル添加し、さらにエタノールを100m1加え、ス
タークを用いて30分攪拌し、透明な混合溶液を1qだ
。Examples Example 1 In a glove box flowing with dry nitrogen, 0.018 mol of In butoxide and 0000 mol of 3N butoxide were added.
Take 2 mol h'' and add 0.0 mol of jetanolamine to it.
Add 2 mol, further add 100 ml of ethanol, stir for 30 minutes using a Stark shaker, and obtain 1 q of a clear mixed solution.
一方、厚みが1mmの石英ガラス板を、1〜リクロルエ
チレン、アセ1〜ン、エタノール、純水を順次用いてそ
れぞれ3分づつ超音波洗浄した後、高純度乾燥窒素を吹
き付【プて乾燥した。On the other hand, a quartz glass plate with a thickness of 1 mm was ultrasonically cleaned for 3 minutes each using 1~lichlorethylene, 1~acetic acid, ethanol, and pure water, and then was sprayed with high-purity dry nitrogen. Dry.
次に、上記混合溶液に石英カラス板を浸漬し、1分後、
垂直に10cm/分の速度で引き上げ、石英ガラス上に
混合溶液の薄膜を形成した。Next, a quartz glass plate was immersed in the above mixed solution, and after 1 minute,
The mixture solution was pulled up vertically at a speed of 10 cm/min to form a thin film of the mixed solution on the quartz glass.
次に、上記薄膜を50’Cの恒湿槽中に30分入れ、乾
燥した。Next, the thin film was placed in a constant humidity bath at 50'C for 30 minutes to dry.
次に、上記乾燥薄膜を、石英ガラス板ごと電気炉に入れ
、500 ’Cで30分焼成した。Next, the dried thin film was placed in an electric furnace together with the quartz glass plate and fired at 500'C for 30 minutes.
かくして得られたITO薄膜は、厚みが約400人で、
抵抗は1.1にΩ/口であった。また、肉眼による観察
では、白濁や亀裂は認められ4rかった。さらに、手で
擦ってみたが、薄膜か剥凹1することはなかった。The ITO thin film thus obtained had a thickness of approximately 400 mm.
The resistance was 1.1 Ω/port. In addition, when observed with the naked eye, cloudiness and cracks were observed and the result was 4r. Furthermore, I tried rubbing it with my hands, but there was no peeling or denting.
実施例2
乾燥窒素を流しているグラブボックス内で、inのプロ
ポキシドを0.018モル、3 nのプロポキシドを0
.002モル計り取り、これにジェタノールアミンを0
.02モル添加し、さらにに1−プロパノールを100
m1加え、スタークを−12=
用いて30分攪拌し、透明な混合溶液を得た。Example 2 In a glove box flushed with dry nitrogen, 0.018 mol of in propoxide and 0.018 mol of 3 n propoxide were added.
.. Measure out 0.002 mole and add 0.00 mol of jetanolamine to it.
.. Added 02 mol of 1-propanol and further added 100 mol of 1-propanol.
ml was added and stirred for 30 minutes using -12= Stark to obtain a transparent mixed solution.
以下、実施例1と同様にして、ITO薄膜を得lこ 。Hereinafter, an ITO thin film was obtained in the same manner as in Example 1.
得られたITOI膜は、厚みが約4.50人で、抵抗は
1.3にΩ/口で必った。また、肉眼による観察では、
白濁や亀裂は認められなかった。さらに、手で擦ってみ
たが、薄膜が剥離することはなかった。The resulting ITOI film had a thickness of approximately 4.50 mm and a resistance of 1.3 Ω/mm. In addition, when observed with the naked eye,
No clouding or cracks were observed. Furthermore, I tried rubbing it with my hands, but the thin film did not peel off.
実施例3
乾燥窒素を流しているグラブボックス内で、Inのブト
キシドを0.018モル、3nのブトキシドを0.00
2モル計り取り、これにジェタノールアミンを0.02
モル添加し、さらにに1−プロパノールを100m1加
え、スタークを用いて30分攪拌し、透明な混合溶液を
得た。Example 3 In a glove box flowing with dry nitrogen, 0.018 mol of In butoxide and 0.00 mol of 3N butoxide were added.
Measure out 2 moles and add 0.02 mol of jetanolamine to it.
1 mole of 1-propanol was added, and 100 ml of 1-propanol was added, followed by stirring for 30 minutes using a Stark shaker to obtain a transparent mixed solution.
以下、実施例1と同様にして、ITO薄膜を得た。Thereafter, an ITO thin film was obtained in the same manner as in Example 1.
得られたITO薄膜は、厚みが約/1. O0人で、抵
抗は1.3にΩ/口であった。また、肉眼による観察で
は、白濁や亀裂は認められなかった。さらに、手で1察
ってみたが、薄膜か剥離することはなかった。The obtained ITO thin film has a thickness of about 1/1. With 0 people, the resistance was 1.3 Ω/mouth. In addition, no clouding or cracks were observed when observed with the naked eye. Furthermore, I tried checking it with my hands, but the thin film did not peel off.
発明の効果
この発明の方法は、0群の化合物によってA、B各群の
化合物の加水分解を抑制しつつ混合溶液から一気に耐熱
性基体上に薄膜を形成し、乾燥し、酸化性雰囲気中で焼
成するので、実施例にも示したように、基体上に、透光
性に優れ、しかも基体から容易に剥離することのないI
TO薄膜を形成することができるようになる。Effects of the Invention The method of the present invention forms a thin film on a heat-resistant substrate from a mixed solution all at once while suppressing the hydrolysis of the compounds of groups A and B with the compound of group 0, and then drying the film in an oxidizing atmosphere. Since baking is performed, as shown in the examples, an I layer with excellent translucency and not easily peeled off from the substrate is coated on the substrate.
It becomes possible to form a TO thin film.
Claims (1)
ばれた化合物を含む混合溶液を調製する工程と、 A群:Inの、メトキシド、エトキシド、プロポキシド
、ブトキシド、メトキシエトキシドまたはエトキシエト
キシド B群:Snの、メトキシド、エトキシド、プロポキシド
、ブトキシド、メトキシエトキシドまたはエトキシエト
キシド C群:モノエタノールアミン、ジエタノールアミン、ト
リエタノールアミン、モノ2−プロパノールアミン、ジ
2−プロパノールアミン、アセチルアセトン、エチレン
グリコール、ジエチレングリコール、プロピレングリコ
ール、ジプロピレングリコール D群:メタノール、エタノール、プロパノール、ブタノ
ール、メトキシエタノール、エトキシエタノール (ロ)耐熱性基体上に上記混合溶液の薄膜を形成する工
程と、 (ハ)上記薄膜を乾燥する工程と、 (ニ)上記乾燥薄膜を酸化性雰囲気中で焼成する工程と
、 を含む、ITO薄膜の形成方法。[Scope of Claims] (a) A step of preparing a mixed solution containing a compound selected from the following Groups A, B, C, and D, and Group A: In, methoxide, ethoxide, propoxide, Butoxide, methoxyethoxide or ethoxyethoxide Group B: Sn, methoxide, ethoxide, propoxide, butoxide, methoxyethoxide or ethoxyethoxide Group C: Monoethanolamine, diethanolamine, triethanolamine, mono-2-propanolamine, Di2-propanolamine, acetylacetone, ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol Group D: methanol, ethanol, propanol, butanol, methoxyethanol, ethoxyethanol (b) Forming a thin film of the above mixed solution on a heat-resistant substrate (c) drying the thin film; and (d) firing the dried thin film in an oxidizing atmosphere.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11794788A JPH01287278A (en) | 1988-05-13 | 1988-05-13 | Formation of thin ito film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11794788A JPH01287278A (en) | 1988-05-13 | 1988-05-13 | Formation of thin ito film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01287278A true JPH01287278A (en) | 1989-11-17 |
Family
ID=14724171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11794788A Pending JPH01287278A (en) | 1988-05-13 | 1988-05-13 | Formation of thin ito film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01287278A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277580A (en) * | 1988-09-12 | 1990-03-16 | Sekisui Chem Co Ltd | Production of ceramic coated body |
EP2137110A4 (en) * | 2007-03-19 | 2012-03-14 | Korea Electronics Telecomm | Method of synthesizing ito electron-beam resist and method of forming ito pattern using the same |
CN108557872A (en) * | 2018-05-22 | 2018-09-21 | 韶关市锦源实业有限公司 | A kind of preparation method of indium tin oxide |
-
1988
- 1988-05-13 JP JP11794788A patent/JPH01287278A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277580A (en) * | 1988-09-12 | 1990-03-16 | Sekisui Chem Co Ltd | Production of ceramic coated body |
EP2137110A4 (en) * | 2007-03-19 | 2012-03-14 | Korea Electronics Telecomm | Method of synthesizing ito electron-beam resist and method of forming ito pattern using the same |
CN108557872A (en) * | 2018-05-22 | 2018-09-21 | 韶关市锦源实业有限公司 | A kind of preparation method of indium tin oxide |
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