JPH01285919A - Semiconductor light guide type polarizing element - Google Patents
Semiconductor light guide type polarizing elementInfo
- Publication number
- JPH01285919A JPH01285919A JP11629888A JP11629888A JPH01285919A JP H01285919 A JPH01285919 A JP H01285919A JP 11629888 A JP11629888 A JP 11629888A JP 11629888 A JP11629888 A JP 11629888A JP H01285919 A JPH01285919 A JP H01285919A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- mode
- interferometric
- optical waveguide
- intensity modulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 95
- 230000010287 polarization Effects 0.000 abstract description 18
- 230000001902 propagating effect Effects 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光通信、光信号処理に適用可能な偏波面選択
性を有する半導体光導波路型偏光素子に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor optical waveguide type polarizing element having polarization plane selectivity applicable to optical communications and optical signal processing.
（従来の技術〕
従来、この種の導波路型偏光素子として金属タラッディ
ング偏光子がある。この金属タラッディング偏光子は光
導波路表面に直接金属をクラツデイングすることによっ
て、ＴＭモードを吸収しＴＥモードのみを透過するとい
う特徴をもっている。(Prior Art) Conventionally, there is a metal cladding polarizer as this type of waveguide type polarizing element.This metal cladding polarizer absorbs the TM mode and converts it into the TE mode by cladding metal directly on the surface of the optical waveguide. It has the characteristic of only transmitting light.
この従来例としては、文献（Ｙ、 Ｓｕｅｍａｔｓｕ、
Ｍ。As a conventional example of this, there is a literature (Y, Suematsu,
M.
Ｈａｋｕｔａ、 Ｋ、 Ｆｕｒｕｙａ、 Ｋ、 Ｃｈｉ
ｂａ、 ａｎｄ Ｒ，Ｈａｓｕｍｔらにより ＾ｐｐｌ
、 Ｐｈｙｓ、 Ｉ、ｅｔｔ、、 ｖｏｌ、 ２１＋
Ｎｏ、ら、 ｐｐ。Hakuta, K., Furuya, K., Chi.
ba, and R, Hasumt et al. ^ppl
, Phys, I,ett,, vol, 21+
No, et al., pp.
２９１−２９３．５ｅｐｔ、 １９７２）に記載された
ものがある。291-293.5ept, 1972).
このような従来例を第４図に基づいて説明する。Such a conventional example will be explained based on FIG. 4.
第４図は従来例の構成図である。基板１１の上にそれよ
り屈折率の大きい薄膜１２を設け、光導波層とする。薄
膜■２の一部には金属（アルミニウム）膜１３が設けら
れている。光はプリズム１４によりＡ→Ｂ−１Ｃ−Ｄの
ように伝搬し、ＢＣ間を伝搬する間に７Ｍモードのみが
減衰し、ＤからはＴＥモードだけが出射する。FIG. 4 is a configuration diagram of a conventional example. A thin film 12 having a higher refractive index is provided on the substrate 11 to serve as an optical waveguide layer. A metal (aluminum) film 13 is provided on a part of the thin film (2). The light propagates in the direction of A→B-1C-D through the prism 14, and only the 7M mode is attenuated while propagating between BC, and only the TE mode is emitted from D.
（発明が解決しようとする課題）
第４図に示すような従来例では、ＴＥモードだけを透過
することができるが、ＴＥあるいはＴＭいずれかの偏波
モードを選択的に透過することはできない。また、先導
波層１２は１次元的な光閉じ込めを持つだけで、光が光
導波層１２を伝搬する間に広がるため、信号光の強度が
減衰する。従って、光信号処理等を目的とした導波路型
素子として従来例を適用することはできない。(Problems to be Solved by the Invention) In the conventional example shown in FIG. 4, only the TE mode can be transmitted, but it is not possible to selectively transmit either the TE or TM polarization mode. Further, the leading wave layer 12 only has one-dimensional optical confinement, and the light spreads while propagating through the optical waveguide layer 12, so that the intensity of the signal light is attenuated. Therefore, the conventional example cannot be applied as a waveguide type element for purposes such as optical signal processing.
導波路型素子を用いて光信号処理を行う場合、導波路型
素子はＴＥあるいはＴＭのいずれかの偏光に対してのみ
動作することが多く、したがってＴＥと７Ｍモードのい
ずれかを選択することが要求される。本発明は上記の要
望に沿うため提案されたもので、ＴＥと７Ｍモードをい
ずれかを選択的に除去し、一方の偏波モードのみを選択
的に透過する半導体光導波路型偏光素子を提供すること
を目的とする。When performing optical signal processing using a waveguide type device, the waveguide type device often operates only for either TE or TM polarization, and therefore it is difficult to select either TE or 7M mode. required. The present invention was proposed in order to meet the above-mentioned demands, and provides a semiconductor optical waveguide type polarizing element that selectively removes either the TE or 7M mode and selectively transmits only one polarization mode. The purpose is to
（課題を解決するための手段）
上記の目的を達成するため、本発明は２次元的な光閉じ
込めを有する１本の半導体光導波路を２本に分岐した後
、再び１本にすることによって構成される干渉型光強度
変調器を、縦列に２個以上接続する半導体光導波路型素
子であって、縦列に接続される２個以上の干渉型光強度
変調器は、その干渉型光強度変調器を構成する光導波路
の方向が、半導体の（１００）面内で（ＯＴ １ ）方
位あるいは（０１１）方位と平行である第１の干渉型光
強度変調器と、前記第１の干渉型光強度変調器とのなす
角度の大きさが４５度である第２の干渉型光強度変調器
とに区別され、前記第１の干渉型光強度変調器を構成す
る半導体光導波路には・′ｖ：′）光導波路を中心にし
て（１００）方向に互いに対向する電極が設けられ、前
記第１の干渉型光強度変調器とのなす角度の大きさが４
５度である第２の干渉型光強度変調器を構成する半導体
光導波路には、光導波路を中心にして前記第１の干渉型
光強度変調器を構成する半導体光導波路に設けられた、
互いに対向する電極の方向と直角をなす方向に、互いに
対向する電極が設けられることを特徴とする半導体光導
波路型偏光素子を発明の要旨とするものである。(Means for Solving the Problems) In order to achieve the above object, the present invention is constructed by branching one semiconductor optical waveguide having two-dimensional optical confinement into two and then making it into one again. A semiconductor optical waveguide device in which two or more interferometric light intensity modulators connected in series are connected in series, and the two or more interferometric light intensity modulators connected in series are a first interferometric light intensity modulator in which the direction of the optical waveguide constituting the optical waveguide is parallel to the (OT 1 ) direction or the (011) direction in the (100) plane of the semiconductor; The semiconductor optical waveguide constituting the first interferometric optical intensity modulator is distinguished from the second interferometric optical intensity modulator whose angle with the modulator is 45 degrees. ') Electrodes are provided that face each other in the (100) direction with the optical waveguide at the center, and the size of the angle formed with the first interferometric optical intensity modulator is 4.
The semiconductor optical waveguide constituting the second interferometric light intensity modulator having an angle of 5 degrees is provided with a semiconductor optical waveguide constituting the first interferometric light intensity modulator centered on the optical waveguide.
The gist of the invention is a semiconductor optical waveguide type polarizing element characterized in that electrodes facing each other are provided in a direction perpendicular to the direction of the electrodes facing each other.
しかして、本発明は導波路型素子を用いた光信号処理を
有効に行うために、電圧を印加することによってＴＥあ
るいはＴＭの偏波モードのいずれか一方だけを選択的に
透過することを最も主要な特徴とする。従来の導波路型
偏光子では、透過する偏波モードは予め定められており
、任意の偏波モードだけを選択的に透過することは不可
能であった。一方、本発明においては、電圧印加により
透過する偏波モードを選択できる点が従来の技術とは著
しく異なる。更に従来技術の金属タラッディング偏光子
は１次元的な光閉し込めしか持たず、光導波路素子へ応
用することは困難である。一方、本発明の偏光素子は２
次元的な光閉じ込めを持つ半導体光導波路によって構成
されており、光導波路素子として光集積回路への応用も
十分可能である。Therefore, in order to effectively perform optical signal processing using a waveguide type element, the present invention proposes the most effective method of selectively transmitting only either the TE or TM polarization mode by applying a voltage. Main characteristics. In conventional waveguide type polarizers, the polarization mode to be transmitted is determined in advance, and it is impossible to selectively transmit only an arbitrary polarization mode. On the other hand, the present invention is significantly different from the conventional technology in that the polarization mode to be transmitted can be selected by applying a voltage. Furthermore, the metal cladding polarizers of the prior art have only one-dimensional light confinement, and are difficult to apply to optical waveguide devices. On the other hand, the polarizing element of the present invention has 2
It is composed of a semiconductor optical waveguide with dimensional optical confinement, and can be applied to optical integrated circuits as an optical waveguide element.
（作用）
本発明は２次元的な光閉じ込めを存する半導体光導波路
によって構成される２つの干渉型光強度変調器を縦列接
続して構成されているので、電極に印加する電圧によっ
てＴＥあるいはＴＭのいずれかの偏波モードを選択的に
透過させることができる。(Function) Since the present invention is constructed by connecting two interferometric optical intensity modulators constructed of semiconductor optical waveguides with two-dimensional optical confinement in cascade, the TE or TM can be adjusted depending on the voltage applied to the electrodes. Either polarization mode can be selectively transmitted.
次に本発明の実施例について説明する。なお、実施例は
一つの例示であって、本発明の精神を逸脱しない範囲で
、種々の変更あるいは改良を行いうろことは言うまでも
ない。Next, examples of the present invention will be described. It should be noted that the embodiments are merely illustrative, and it goes without saying that various changes and improvements may be made without departing from the spirit of the present invention.
（実施例）
第１図は本発明の半導体光導波路型偏光素子の実施例を
示す。この図において信号光は２次元的な光間し込めを
有する半導体光導波路中をＡ−＋Ｂ→Ｃ−＋Ｄ−＋Ｅ−
＋Ｆと伝搬する。四角形ＰＱＲ３はＧａＡｓあるいはＩ
ｎＰ等の４３ｍの対称性をもつジンクブレンド型半導体
結晶の（１００）面であり、ＰＱとＲ３とは＜０１１＞
に垂直なへき開面であり、ＱＲとＳＰは〈０丁１〉に垂
直なへき開面である。■と２はそれぞれ光導波路の上と
光導波路の両側に設けられた電極を表す。(Example) FIG. 1 shows an example of the semiconductor optical waveguide type polarizing element of the present invention. In this figure, signal light travels through a semiconductor optical waveguide with a two-dimensional optical convergence from A-+B to C-+D-+E-.
It propagates as +F. Square PQR3 is GaAs or I
It is the (100) plane of a zinc blend semiconductor crystal with a symmetry of 43m such as nP, and PQ and R3 are <011>
The cleavage plane is perpendicular to , and QR and SP are the cleavage planes perpendicular to <0-1>. 2 and 2 represent electrodes provided on the optical waveguide and on both sides of the optical waveguide, respectively.
ＢとＣの間は１本の光導波路を２本の直線光導波路に分
岐した後、再び１本に戻す第１の干渉型光強度変調器を
形成している。ＢＣ間の光導波路の長さはいずれの経路
をとっても等しい。ＡとＢとＣで構成される直線はＰＱ
に平行すなわち〈０１■〉方向の直線となる。ＤＥ間は
ＢＣ間と同一の第２の干渉型光強度変調器である。ＢＣ
間とＤＥ間の第１及び第２の干渉型光強度変調器は互い
に角度θを形成するように、光導波路ＣＤを介して滑ら
かに接続される。光導波路ＥＦは、ＳＰと平行なへき開
面ＱＲから信号光を出射させるために滑らかな曲線を形
成する。ｌａ、ｌｂは第１の干渉型光強度変調器の電極
、２ａ、２ｂは第２の干渉型光強度変調器の電極を示す
。The space between B and C forms a first interference type optical intensity modulator that branches one optical waveguide into two straight optical waveguides and then returns them to one straight optical waveguide. The length of the optical waveguide between BCs is the same regardless of the path. The straight line composed of A, B, and C is PQ
It becomes a straight line parallel to , that is, in the <01■> direction. The second interferometric optical intensity modulator between DE and BC is the same as that between BC. B.C.
The first and second interferometric optical intensity modulators between DE and DE are smoothly connected via an optical waveguide CD so as to form an angle θ with each other. The optical waveguide EF forms a smooth curve in order to emit the signal light from the cleavage plane QR parallel to SP. la and lb indicate electrodes of the first interferometric light intensity modulator, and 2a and 2b indicate electrodes of the second interferometric light intensity modulator.
第２．第３図はそれぞれＢＣ間（第１）とＤＥ間（第２
）の干渉型光強度変調器のに−Ｌ及びＭ−Ｎに沿う断面
図である。第２図及び第３図において、４は（１００）
面をもつ半導体基板、６は半導体基板４上のエピタキシ
ャル成長した膜であり、５はエピタキシャル膜６の中に
形成され、かつ膜６より大きな屈折率を有する半導体光
導波路である。７と９と１０とは夫々電極８又は１１と
オーミック接合を得るための高キ＋リア濃度領域である
と同時に、領域７は光導波路５に（１００）面と垂直方
向に電圧を印加し、領域９と１０とは光導波路５に（１
００）面と平行方向に電圧を印加する働きをもつ。３と
８と１１とはオーミック電極である。Second. Figure 3 shows the distance between BC (1st) and DE (2nd), respectively.
) is a sectional view taken along lines -L and MN of the interferometric optical intensity modulator of FIG. In Figures 2 and 3, 4 is (100)
6 is a film epitaxially grown on the semiconductor substrate 4; 5 is a semiconductor optical waveguide formed in the epitaxial film 6 and having a larger refractive index than the film 6; 7, 9, and 10 are high chelia concentration regions for obtaining ohmic contact with the electrodes 8 or 11, respectively, and at the same time, the region 7 applies a voltage to the optical waveguide 5 in a direction perpendicular to the (100) plane. Regions 9 and 10 are located in the optical waveguide 5 (1
00) has the function of applying voltage in a direction parallel to the plane. 3, 8, and 11 are ohmic electrodes.
次に動作について説明する。Next, the operation will be explained.
第１図のＡから偏波方向が（１００）面と平行なＴＥと
偏波方向が（１００）面と垂直な７Ｍモードの混在した
楕円偏光が入射するとする。ＢＣ間の第１の干渉型光強
度変調器を構成する２本の平行な光導波路のうちの一方
の光導波路に（１００）面と垂直方向に第２図の電極３
と８を介して電圧を印加すると、光導波路を伝搬するＴ
Ｅと７Ｍモードのうちの、ＴＥモードだけの位相を変化
させることができる。このとき７Ｍモードの位相はまっ
たく変化しない。印加する電圧を適当に選ぶことによっ
てＴＥモードの位相変化量を半波長分すなわちπとする
ことができ、この場合ＴＥモードはＣにおいて、第１の
干渉型光強度変調器の他方の光導波路を伝搬してきたＴ
Ｅモードと逆相となり、Ｃ以降の光導波路を伝搬するＴ
Ｅモードの光強度は消滅する。次にＢＣ間とＤＥ間との
第１及び第２の干渉型光強度変調器のなす角度θが±４
５度となるように製作された第１図の実施例において、
ＤＥ間の第２の干渉型光強度変調器を構成する２本の平
行な光導波路のうちの一方の光導波路に（１００）面と
平行方向に第３図の電極１１を介して電圧を印加すると
、光導波路を伝搬するＴＥと７Ｍモードのうちの７Ｍモ
ードだけの位相を変化させることができる。Assume that elliptically polarized light in which a TE mode whose polarization direction is parallel to the (100) plane and a 7M mode whose polarization direction is perpendicular to the (100) plane is incident from A in FIG. The electrode 3 in FIG. 2 is attached to one of the two parallel optical waveguides constituting the first interferometric optical intensity modulator between BC in a direction perpendicular to the (100) plane.
When a voltage is applied through and 8, T
Of the E and 7M modes, the phase of only the TE mode can be changed. At this time, the phase of the 7M mode does not change at all. By appropriately selecting the applied voltage, the amount of phase change in the TE mode can be set to half a wavelength, that is, π. In this case, the TE mode changes the other optical waveguide of the first interferometric optical intensity modulator at C. T that has been propagated
T which has the opposite phase to E mode and propagates in the optical waveguide after C
The light intensity of E mode disappears. Next, the angle θ formed by the first and second interferometric optical intensity modulators between BC and DE is ±4.
In the embodiment of FIG. 1, which is made to be 5 degrees,
A voltage is applied to one of the two parallel optical waveguides constituting the second interferometric optical intensity modulator between the DEs in a direction parallel to the (100) plane via the electrode 11 in FIG. Then, it is possible to change the phase of only the 7M mode among the TE and 7M modes propagating through the optical waveguide.
印加する電圧を適当に選ぶことによって、７Ｍモードの
位相変化量をπとすることができ、Ｅにおいて他方の光
導波路を伝搬してきた７Ｍモードと逆相の関係にできる
。したがって、Ｅ以降の光導波路を伝搬する７Ｍモード
の光強度は消滅する。By appropriately selecting the voltage to be applied, the amount of phase change of the 7M mode can be set to π, and it can be made to have an opposite phase relationship with the 7M mode propagating through the other optical waveguide at E. Therefore, the light intensity of the 7M mode propagating through the optical waveguide after E disappears.
この場合にはＴＥモードの伝搬光はＤＥ間では何らの位
相変化も受けない。In this case, the TE mode propagating light does not undergo any phase change between the DEs.
このようなＴＥと７Ｍモードに対する変調特性を有する
２つの干渉型光強度変調器を縦列に接続した第１図の実
施例においては、ＴＦ、と７Ｍモードの混在する信号光
をＡから入力し、ＢＣ間の干渉型光強度変調器の一方の
光導波路に適当な電圧を印加し、さらにＤＥ間の干渉型
光強度変調器には電圧を印加しない場合にはＦから７Ｍ
モードのみを出力させることができる。また、ＢＣ間の
干渉型光強度変調器には電圧を印加せず、ＤＥ間の干渉
型光強度変調器の一方の光導波路に適当な電圧を印加す
る場合にはＦからＴＥモードのみを出力させることがで
きる。In the embodiment shown in FIG. 1 in which two interferometric optical intensity modulators having such modulation characteristics for TE and 7M modes are connected in series, signal light in which TF and 7M modes are mixed is input from A, If an appropriate voltage is applied to one of the optical waveguides of the interferometric optical intensity modulator between BC and no voltage is applied to the interferometric optical intensity modulator between DE, F to 7M.
Only the mode can be output. In addition, if no voltage is applied to the interferometric optical intensity modulator between BC and an appropriate voltage is applied to one optical waveguide of the interferometric optical intensity modulator between DE, only the TE mode is output from F. can be done.
この結果から明らかなように、２次元的な光閉じ込めを
有する半導体光導波路によって構成される２つの干渉型
光強度変調器を縦列接続した本発明の偏光素子は、電極
に印加する電圧によってＴＥあるいはＴＭいずれかの偏
波モードを選択的に透過させることができるという特長
を有する。As is clear from this result, the polarizing element of the present invention, in which two interferometric optical intensity modulators constituted by semiconductor optical waveguides having two-dimensional optical confinement are connected in series, can be used to achieve TE or It has the feature of being able to selectively transmit any TM polarization mode.
（発明の効果）
軟土のように本発明による半導体偏光素子は、透過させ
る偏光モードを電圧印加呻ｖり選択でき、かつ２次元的
な光閉じ込めを有する光導波路によって構成されるため
に、光通信あるいは光信号処理を目的とした光導波路型
素子としての応用が可能である効果を有する。(Effects of the Invention) Like soft soil, the semiconductor polarizing element according to the present invention allows the polarization mode to be transmitted to be selected by applying a voltage, and since it is constituted by an optical waveguide having two-dimensional optical confinement, It has the effect that it can be applied as an optical waveguide type element for the purpose of communication or optical signal processing.
第１図は本発明の半導体光導波路型偏光素子の実施例、
第２図及び第３図は第１図においてに−Ｌ及びＭ−Ｎ線
に沿う断面図、第４図は従来例を示す。
１．２・・・・変調用電極
３．８．１１・・電極
４・・・・・・半導体基板
５・・・・・・光導波路
６・・・・・・光導波路５より屈折率の小さいエピタキ
シャル成長膜
７．９．１０・・高キヤリア濃度領域
第２図
第３図
第４図
３．８．１１−ｍ−電極
４− 半導体を坂FIG. 1 shows an embodiment of the semiconductor optical waveguide type polarizing element of the present invention.
2 and 3 are sectional views taken along lines -L and MN in FIG. 1, and FIG. 4 shows a conventional example. 1.2... Modulation electrode 3.8.11... Electrode 4... Semiconductor substrate 5... Optical waveguide 6... Optical waveguide 5 has a refractive index. Small epitaxial growth film 7.9.10...High carrier concentration region Fig. 2 Fig. 3 Fig. 4 Fig. 4 3.8.
Claims (1)
２本に分岐した後、再び１本にすることによって構成さ
れる干渉型光強度変調器を、縦列に２個以上接続する半
導体光導波路型素子であって、縦列に接続される２個以
上の干渉型光強度変調器は、その干渉型光強度変調器を
構成する光導波路の方向が、半導体の｛１００｝面内で
〔ｏ＠１＠１〕方位あるいは〔０１１〕方位と平行であ
る第１の干渉型光強度変調器と、前記第１の干渉型光強
度変調器とのなす角度の大きさが４５度である第２の干
渉型光強度変調器とに区別され、前記第１の干渉型光強
度変調器を構成する半導体光導波路には、その光導波路
を中心にして〔１００〕方向に互いに対向する電極が設
けられ、前記第１の干渉型光強度変調器とのなす角度の
大きさが４５度である第２の干渉型光強度変調器を構成
する半導体光導波路には、光導波路を中心にして前記第
１の干渉型光強度変調器を構成する半導体光導波路に設
けられた、互いに対向する電極の方向と直角をなす方向
に、互いに対向する電極が設けられることを特徴とする
半導体光導波路型偏光素子。[Claims] Two interferometric optical intensity modulators arranged in tandem are constructed by branching one semiconductor optical waveguide with two-dimensional optical confinement into two and then recombining it into one. In the semiconductor optical waveguide type devices connected above, two or more interferometric optical intensity modulators connected in series are such that the direction of the optical waveguides constituting the interferometric optical intensity modulators is {100} of the semiconductor. The size of the angle formed between the first interferometric light intensity modulator and the first interferometric light intensity modulator that is parallel to the [o@1@1] direction or [011] direction in the plane is 45 The semiconductor optical waveguides constituting the first interferometric optical intensity modulator are arranged opposite to each other in the [100] direction with the optical waveguide as the center. The semiconductor optical waveguide constituting the second interferometric optical intensity modulator is provided with an electrode that forms an angle of 45 degrees with the first interferometric optical intensity modulator. and a semiconductor optical waveguide constituting the first interferometric light intensity modulator, wherein mutually opposing electrodes are provided in a direction perpendicular to the direction of the mutually opposing electrodes. Wave path type polarizing element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11629888A JP2717210B2 (en) | 1988-05-13 | 1988-05-13 | Semiconductor optical waveguide polarization element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11629888A JP2717210B2 (en) | 1988-05-13 | 1988-05-13 | Semiconductor optical waveguide polarization element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01285919A true JPH01285919A (en) | 1989-11-16 |
| JP2717210B2 JP2717210B2 (en) | 1998-02-18 |
Family
ID=14683562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11629888A Expired - Fee Related JP2717210B2 (en) | 1988-05-13 | 1988-05-13 | Semiconductor optical waveguide polarization element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2717210B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07318986A (en) * | 1994-05-25 | 1995-12-08 | Nec Corp | Waveguide type optical switch |
| JP2007133287A (en) * | 2005-11-14 | 2007-05-31 | Nippon Telegr & Teleph Corp <Ntt> | Wavelength multiplexer/demultiplexer |
| JP2007134480A (en) * | 2005-11-10 | 2007-05-31 | Nippon Telegr & Teleph Corp <Ntt> | Tunable light source |
| JP2007133286A (en) * | 2005-11-14 | 2007-05-31 | Nippon Telegr & Teleph Corp <Ntt> | Wavelength multiplexer/demultiplexer |
| JP2008282937A (en) * | 2007-05-10 | 2008-11-20 | Nippon Telegr & Teleph Corp <Ntt> | Tunable light source |
-
1988
- 1988-05-13 JP JP11629888A patent/JP2717210B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07318986A (en) * | 1994-05-25 | 1995-12-08 | Nec Corp | Waveguide type optical switch |
| JP2007134480A (en) * | 2005-11-10 | 2007-05-31 | Nippon Telegr & Teleph Corp <Ntt> | Tunable light source |
| JP2007133287A (en) * | 2005-11-14 | 2007-05-31 | Nippon Telegr & Teleph Corp <Ntt> | Wavelength multiplexer/demultiplexer |
| JP2007133286A (en) * | 2005-11-14 | 2007-05-31 | Nippon Telegr & Teleph Corp <Ntt> | Wavelength multiplexer/demultiplexer |
| JP2008282937A (en) * | 2007-05-10 | 2008-11-20 | Nippon Telegr & Teleph Corp <Ntt> | Tunable light source |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2717210B2 (en) | 1998-02-18 |
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