JPH01278029A - Insulating material for electronic circuit - Google Patents

Abstract

PURPOSE:To improve the matching property in respect to the ion mutual diffusion, the thermal expansion, etc., by a method wherein a specific oxide superconductor wiring material is provided with the same components but in a different composition. CONSTITUTION:An oxide superconductor wiring material represented by a formula I is provided with the same components but in a different composition. In formula I, R represents at least one element out of Sc, Y, La and lanthanide series, X represents at least one element out of IIa group in the periodic table, Z represents at least one element out of transition metallic elements, and D represents at least one element out of group VIa. Furthermore, the three dimensional wiring is composed of a substrate material 1, through hole connecting parts 2, conductor materials 3, insulation parts 4, protective film 5 and connecting terminals 6. As for the substrate 1 and the insulating parts 4 for the oxide superconductor wiring, Y2BaCuO5 which is in the same components but the different compositions from those of a superconductor YBa2Cu3O7-delta is applicable. Through these procedures, the matching property in respect to the ion material diffusion, the thermal expansion, etc., can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an insulating material for electronic circuits that has good compatibility with oxide superconductors.

[Prior art]

The recent development of oxide superconductors has been remarkable, and various oxide superconductors with rapidly rising critical temperatures have been developed, and their use as wiring materials for electronic circuits and printed wiring boards is being intensively researched. . The advantages of using these oxide superconductors as wiring materials become more prominent as circuits become more dense, multilayered, or three-dimensional.

However, when wiring is performed using an oxide superconductor, it becomes the substrate. Alternatively, an insulating layer is required to form an intervening layer, but insulating materials conventionally used in semiconductor processes, such as SL compounds, heat-resistant oxides, and oxide single crystals, suffer from deterioration due to ion diffusion and thermal expansion. The results were not satisfactory due to factors such as mismatching of the coefficients.

〔the purpose〕

An object of the present invention is to provide an insulating material for electronic circuits that has good compatibility with oxide superconductor wiring materials in terms of interdiffusion of ions, thermal expansion, etc. in high-density or three-dimensional electronic circuits. That is.

〔composition〕

The insulating material for electronic circuits of the present invention has the general formula RrXxZzDδ
(However, in formula 1, R is Sc, Y, La, and at least one element from the lanthanoid group, X is at least one element from Group IIa of the periodic table, and Z is at least one transition metal element.
Species D is the same type of component with respect to the oxide superconductor wiring material represented by at least one element of Group VIa, but has a different composition.

The oxide superconductor represented by the general formula above has r, x
By changing the values of , z, several stable semiconductor or insulator phases exist even with the same components. These are described as examples in the following literature, but it is desirable to select one with a composition as close to the superconducting phase as possible, thereby improving consistency.
(D, G, Hinks, L, Soderholm,
D.W.

Capone, J.D., Jorgensen, 1
．． 5chuller.

C., U., Segre, K., Zhang and J.
D.Grace.

Appl, Phys, Lett, 50.1688 (
(1987), ) The present invention will be explained in more detail below with reference to Examples.

FIG. 1 conceptually shows the three-dimensional wiring, and FIG. 2 is a detailed sectional view thereof. In these figures, 1 is the substrate material, 2
is a through-hole connection part, 3 is a conductive material, 4 is an insulating part, 5
6 indicates a protective film, and 6 indicates a connection terminal.

In the conductor or superconductor, in the general formula RrXxZzDδ, the lanthanide group element of R is preferably Y, the Iia group element X is preferably Ba, Sr, or Ca, the transition metal Z is preferably Cu, and the VIa group element is preferably O. ,
To give a particular example, the molecular formula is YBa, Cu30δ (
It is known that superconductivity is remarkable when the crystal structure is orthorhombic (δ=6.9). Conductors or superconductors can be used as wiring materials (conductor materials) in the form of thin films or bulk layers.

As the substrate, glass, ceramics, SrTiOl, etc. are generally used, and as the interlayer insulating layer, Si oxide or nitride is usually used, but as the substrate or insulating layer for oxide superconductor wiring, for example, YrBaxCuzO is used.
δ (where r=2.0°0.7≦X≦1.1.0.
It is an object of the present invention to use 8≦2≦1.1.4.5≦δ≦5.5). Specific examples include superconductor YBa,
Y and B have the same components as Cu and O□1 but have different compositions.
aCuO, can be mentioned. Below, we will continue to explain compounds with this composition.6 Conventional oxides and nitrides, such as S r T L O3#
Instead of using alumina, Si, 5102 on Si, etc., when using Y, BaCuO, etc. as a circuit board, in addition to forming it in bulk by sintering, thin film formation methods such as sputtering, wet film formation such as screen printing etc. It can be done by law. The temperature for sintering is 820~
910°C is suitable. Of course, the insulating layer at this time may be formed on another substrate. Therefore, a first conductor made of a conductive or superconducting thin film is placed on the substrate 11.
A layer 12 is deposited, followed by an insulating layer 13 of Y, BaCub, etc., approximately 2 μm thick.

Next, an aluminum pattern 15 for the purpose of lift-off is formed to a thickness of 1 .mu.m as a predetermined pattern by mask vapor deposition, and a second conductor layer 14 is further deposited thereon to a thickness of about 2 .mu.m (FIG. 3(a)).

After lift-off, an insulating layer 13 made of Y, BaCuO6 film with a thickness of 2 μm is further deposited (FIG. 3(b)), and then a resist pattern 16 for dry etching is deposited.
form. At this time, the width of the resist pattern 16 is positioned above the removed portion of the first conductor layer and is sufficiently narrower than the width of the removed portion. Therefore, even if the etch holes 17 formed by dry etching reach the first conductor layer 12,
A Y z B a Cuos insulating layer 13 is provided between the layer 14 and the Y z B a Cuos insulating layer 13 .
(Fig. 3(C)). After removing the resist 16, a third conductor layer 18 is deposited, and the through holes formed at this time connect the first conductor layer 12 and the third layer 1.
8 can be connected to form the main part of multilayer or three-dimensional electronic circuit wiring (FIG. 3(d)).

Regarding the circuit produced by the above procedure, Y28aCub,
When we measured the DC resistance value between the layers, at room temperature,
It was found that the resistance was 7.6XIO' (Ω·am), and the resistance became even higher at low temperatures, and that it exhibited sufficient insulating properties for conductive or superconducting films.

〔effect〕

The insulating material of the present invention as described above has sufficient insulating properties as an insulating layer interposed between a conductive layer or a superconducting layer in a multilayer or three-dimensional electronic circuit, and has the same components as the conductive or superconducting layer, but only in its composition. Because of the difference in ions, it becomes an insulating material with good compatibility in terms of ion interdiffusion, thermal expansion, etc., and has the effect of providing a material useful as a component of high-density or three-dimensional electronic circuits.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram conceptually showing three-dimensional wiring. FIG. 2 is a detailed cross-sectional explanatory diagram of FIG. 1. FIG. 3 is an explanatory diagram showing the manufacturing process of an electronic circuit in an example of the present invention.

Claims (1)

[Claims] 1. General formula RrXxZzDδ (wherein R is Sc, Y, La, and at least one element from the lanthanide group, X is at least one element from group IIa of the periodic table, and Z is a transition An insulating material for electronic circuits having the same kind of components but a different composition from an oxide superconductor wiring material represented by: (at least one metal element, D is at least one group VIa element).