JPH01276600A - Sor light radiating device - Google Patents

Abstract

PURPOSE:To obtain an SOR radiating device requiring a small installation area by vertically providing a beam channel extracting the SOR light via an X-ray mirror on a circular vacuum chamber in which an electron beam is circulated. CONSTITUTION:An extracting tube 7 to extract SOR(synchroton radiation ray) radiated from an electron beam is connected to a deflection section 3 in the tangent direction to the circulating electron beam. An SOR deflection section 8 vertically deflecting the SOR is connected to this extracting tube 7, a beam channel 9 is connected to the SOR deflection section 8 vertically to a chamber 1. A stepper 5 to radiate the SOR to a wafer or the like is provided at the upper end of this beam channel 9. The SOR 12i radiated from the electron beam circulated in the vacuum chamber 1 is reflected by an X-ray mirror 11 and can be guided to the beam channel 9 provided vertically. The installation area of the device can be reduced.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an SOR light irradiation device for extracting 5OR (synchrotron radiation) from a circulating electron beam, and in particular, an SOR light irradiation device that requires a small building area for installation. This relates to an SOR light irradiation device.

[Prior Art] When high-energy electrons, which have almost the same speed as light, are bent by a magnet, they emit strong light in the tangential direction. This is SOR (synchrotron radiation), which covers a wide wavelength range from the visible light region to the As a result, applications in fields such as semiconductor manufacturing and medical single molecule structure analysis are becoming more active.

This SOR light irradiation device will be explained with reference to FIG.

In FIG. 3, an annular vacuum chamber 1 is provided with a high frequency acceleration cavity 2 for accelerating an electron beam and a deflection section 3 for deflecting the electron beam by magnetic force. This electron beam is accelerated in the high-frequency acceleration cavity 2, and is bent by the deflection section 3 at a speed close to the speed of light, thereby emitting SOR. This deflection unit 3 is provided with a beam channel 4 in the tangential direction with respect to the beam movement direction, and a stepper 5 is installed at the tip of the beam channel 4 for irradiating SOR onto a wafer or the like through a mask to transfer a circuit pattern. provided.

[Problems to be solved by the invention] By the way, when trying to perform LSI lithography using this SOR, in order to improve the resolution, it is necessary to create a beam channel with a distance of about 10 m from the light emission point to the exposure area. 4 will be required. Therefore, no matter how small the diameter of the vacuum chamber may be in the future, the area within the building will be limited by the radially connected beam channels. In addition, the diameter of the vacuum chamber 1 is 3 to 5 m, so if a large number of beam channels 4 are connected radially, the overall area will increase, and the area of the building 6 in which it is installed will also inevitably increase. be.

The present invention has been made in consideration of the above circumstances, and provides an SOR irradiation device that requires less installation space.

[Means for Solving the Problems] In order to achieve the above object, the present invention provides a circular vacuum chamber in which an electron beam circulates, and a beam channel for extracting SOR light through an xi mirror, which is perpendicular to the chamber. It was established in

[Function] According to the above configuration, since the SOR is vertically deflected by the X-ray mirror, the beam channel can be connected perpendicularly to the vacuum chamber, so that the installation area can be reduced.

[Embodiments] Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

In FIG. 1, reference numeral 1 denotes an annular vacuum chamber, and the vacuum chamber 1 is provided with a high frequency acceleration cavity 2 for accelerating an electron beam, and a slanted deflection section 3 for deflecting electrons by magnetic force. Although not shown in the figure, an electron injection device for supplying electrons into the chamber 1 is connected to the vacuum chamber 1.

An extraction tube 7 for extracting 5OR (synchrotron radiation) emitted from the electron beam is connected to the deflection unit 3 in a tangential direction with respect to the circulating electron beam. This extraction pipe 7 is connected to a SORfNN group section 8 that vertically deflects the SOR, and a beam channel 9 is connected to the SOR deflection section 8 perpendicularly to the chamber 1 . A stepper 5 is provided at the upper end of the beam channel 9 for irradiating SOR onto a wafer or the like.

The 5OR1i facing part 8 is configured with a plurality of X-ray mirrors 11 provided in the main body 10, and as shown in the figure, the 5OR1i facing part 8 is
When i is incident, the X-ray mirror 11 emits 5OR12
r to be emitted to the beam channel 9.

In the above, the electron beam in the vacuum chamber 1 is accelerated in the high frequency acceleration cavity 2, and when it approaches the speed of light, the deflection section 3 emits an SOR in the tangential direction. This SOR is
The beam is vertically reflected by the X-ray mirror 11 (a plurality of mirrors) of the 5ORfffl direction section 8, ascends the beam channel 9, and is irradiated onto a wafer or the like in the stepper 5. In some cases, the beam may be deflected by 90° using a combination of a plurality of mirrors with small deflection angles.

Since this beam channel 9 is provided vertically, the installation area is approximately the same as that of the vacuum chamber 1, and the building area can be reduced. Moreover, this vacuum chamber 1 is
Since it can be installed underground, there is no need to increase the height of the building. Furthermore, by providing the vacuum chamber 1 underground, the thickness of the radiation shielding wall of the building can also be reduced.

[Effects of the Invention] As is clear from the above explanation, the present invention exhibits the following excellent effects.

(2) SO'R emitted from an electron beam circulating in a vacuum chamber can be reflected by an X-ray mirror and guided to a vertically installed beam chamber, so the installation area of the device can be reduced.

■ Since the vacuum chamber can be buried underground, there is no need to make the building higher.

Figure 2 is a detailed sectional view of the SOR deflection section in Figure 1, and Figure 3 is a detailed cross-sectional view of the SOR deflection section in Figure 1.
The figure is a plan view showing a conventional example.

In the figure, 1 is a vacuum chamber, 3 is a deflection unit, 9 is a beam chamber, and 11 is an X-ray mirror.9 Patent applicant: Ishikawajima Harima Heavy Industries Co., Ltd. Representative Patent Attorney Kinu Tani
Nobuo Figure 2 Figure 3

Claims (1)

[Claims] 1. In the annular vacuum chamber in which the electron beam circulates,
S characterized in that a beam channel for extracting SOR light through a line mirror is provided perpendicularly to the chamber.
OR light irradiation device.