JPH01272999A - Gas storage device - Google Patents

Abstract

PURPOSE:To provide the secure adhesiveness between a gas implanted accumulation layer and ion implantation electrode and to prevent trouble, device failure, etc., by providing an intermediate metallic layer having the high adhesive power to the accumulation layer to the inside surface of the ion implantation electrode. CONSTITUTION:A sputtering electrode 6 to which a negative high voltage is impressed and the ion implantation electrode 1 to which a negative voltage is impressed are installed to face each other. Gas is introduced between the two electrodes to effect the glow discharge. The gaseous ions formed by this glow discharge are brought into collision against the electrode 6 by electric field acceleration so that the electrode 6 is sputtered by the gaseous ions. A coating layer is formed while the sputtered metal particles generated by this sputtering are stuck to the surface of the electrode 1. The gas to be treated is confined into the sputtered metal structure and is thereby stored while the gaseous ions are successively implanted to the coating layer in the stage of forming the coating layer. The exfoliation and dislodgment of the gas-implanted accumulation layer 12 are prevented by providing the intermediate metallic layer 3 to the surface of the electrode 1. The safe operation as to the implantation and immobilization treatment of the gas to be treated is thus maintained.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention is directed to, for example, ionizing a radioactive gas (hereinafter referred to as radioactive gas) and injecting the ions into a sputtered metal structure. The present invention relates to a gas storage device for confining and storing gas.

(Prior Art) Generally, when harmful radioactive gases are released into the environment from a nuclear facility such as a nuclear fuel reprocessing plant, the effects may be wide-ranging and long-lasting. Therefore, safety measures are required to be much stricter than in other general industries, and the treatment of radioactive gases is currently an important technical field.

Among the radioactive gases, the gas that may pose a problem is krypton-85 (abbreviated as Kr = 85) or Kr.
Since r-85 has a long half-life of 10.7 years, it is necessary to store it for a long time.

For this reason, currently known methods for reliably storing radioactive gases such as Ki-85 include high-pressure cylinder storage, zeolite adsorption, and immobilization using ion implantation.

Among these methods, the storage method using high-pressure cylinders is a method of permanently preserving radioactive gas by sealing it in a pressure-resistant pressure container such as a cylinder, but it is required by law to periodically conduct pressure tests of the pressure container.

Therefore, complicated work such as having to transfer the stored gas each time is required, which poses a problem in ensuring long-term safe storage.

Furthermore, the adsorption method in which Ki-85 gas is adsorbed onto zeolites 1 to 1 requires operation at high temperature and high pressure, and there are many problems that need to be improved before it can be put to practical use.

In general, the ion implantation method ('A) is attracting attention because it is superior to other methods in terms of stability, not only because it can be disposed of at room temperature or low temperature, but also because it is economical.The following is from Figure 2. A conventional gas storage processing method and apparatus for fixing radioactive gas using ion implantation will be explained with reference to FIG.

As shown in FIG. 2, this ion implantation storage device has a sealed structure in which a flat anode lid 2 is placed over the top opening of a bottomed cylindrical ion implantation electrode 1 to form a container. It has become. An insulating ring 4 is interposed above the ion implantation electrode 1, and this insulating ring 4 connects the anode lid 2.
and the ion implantation electrode 1 are electrically insulated. Note that the ion implantation electrode 1. The closed structure formed by the anode lid 2 and the insulating ring 4 will be referred to as a container in the following description.

The inside of the container constitutes an ionization chamber 5. A cylindrical sputter electrode 6 is arranged in the center of the container, and this sputter electrode 6
is insulated from the anode M2 by an insulating terminal 7 such as a birch mech seal fitted into the anode swallow 7.

An intake pipe 8 for introducing radioactive gas and an exhaust pipe 9 for exhausting the inside of the container are connected to the anode lid 2. The exhaust pipe 9 is connected to a vacuum pump or the like (not shown), and the inside of the container is maintained at a constant low pressure.

A sputter power supply 10 is connected to the sputter electrode 6, and an ion implantation power supply 11 is connected to the ion implantation electrode 1, and voltages necessary for performing the ion implantation process are applied to each of them.

Reference numeral 12 shown in FIGS. 2 to 4 indicates the ion implantation electrode 1.
This is a cumulative layer consisting of an ion layer of radioactive gas formed on the inner surface of the sputtering electrode 6 and a layer formed by sputtering the sputtering electrode 6. Reference numeral 13 indicates gas ions; reference numeral 14 indicates gas ions;
indicate sputtered metal, respectively.

Next, a method for immobilizing radioactive gas using the above gas storage device will be explained.

In the radioactive gas storage device described above, the gas pressure inside the sealed ion implantation electrode 1 and the ion implantation electrode 1 and the sputtering electrode 6 are
If the voltage applied to satisfies appropriate conditions, a discharge occurs in the ionization chamber 5. This discharge ionizes the gas and turns it into an ionic state, forming discharge plasma.

For example, the anode M2 and the ion implantation electrode 1 are grounded while the gas pressure is maintained at io-+-10-31'Orr,
A negative voltage of 1 kV or less is applied to the ion implantation electrode 1 and 1 kV is applied to the spuck electrode 6 by the sputter power supply 10 and the ion implantation power supply 11.
A negative high voltage of kv or more is applied continuously.

By applying this voltage, a gas glow discharge occurs in the ionization chamber 5, the radioactive gas is ionized, and gas ions 13 are generated.

The generated gas ions 13 are accelerated along the relatively strong electric field of the sputter electrode 6, as shown in FIG. 3, and collide with the surface of the sputter electrode 6 to cause sputtering. As a result, the ejected sputtered metal 14 is exposed to the inner surface of the opposing ion implantation electrode 1, and the cumulative layer 12 is
form.

At the same time, as shown in FIG. 4, some of the gas ions 13 are directly accelerated by the electric field of the ion implantation electrode 1 and are implanted into the cumulative layer 12 of (E).

Thereafter, while accumulating the cumulative layer 12, the cumulative layer 1
Radioactive gas is continuously injected in the form of gas ions into the chamber 2 and fixed therein.

(Problem to be Solved by the Invention) In such a gas storage device, if the adhesion between the ion implantation electrode and the implantation cumulative layer formed on the inner surface of the ion implantation electrode is not strong, the gas will not be fixed during the gas injection and immobilization operation. There are problems in that the implanted cumulative layer may peel off from the ion implantation electrode, causing gas to be re-released, or the peeled off implanted cumulative layer may cause electrical breakdown, leading to abnormal discharge or damage to the device.

The present invention has been made to solve the above problems,
Adhesion between the implanted cumulative layer and the ion implanted electrode is improved by placing a metal intermediate layer on the surface of the ion implanted electrode.
The present invention aims to provide a gas storage device which is made strong, ensures operational stability related to gas injection and fixation processing, and has high reliability.

[Structure of the Invention] (Means for Solving the Problems) The present invention provides a sputtering electrode to which a high negative voltage is applied and an ion implantation electrode to which a negative voltage is applied, which are placed facing each other, A gas is introduced to generate a glow discharge, and the gas ions generated by the glow discharge are accelerated by an electric field and collided with the sputter electrode to sputter the sputter electrode with the gas ions, and the sputter metal atoms generated by this sputter rig are is attached to the surface of the ion implantation electrode 1! While forming a layer of
In a gas storage device that confines a gas to be treated in a sputtered metal structure while sequentially injecting gas ions in the step of forming the coding layer, the surface of the ion implantation electrode (the surface of the ion implantation electrode) is characterized by being provided with an intermediate metal layer. .

(Function) According to the present invention, by providing an intermediate metal layer for increasing the adhesion force between the accumulated layer consisting of the sputtered metal and the gas to be treated to be implanted on the surface of the ion implantation electrode and the surface of the ion implantation electrode. The accumulated layer can be prevented from peeling off, and stable operation related to the injection and fixation treatment of the gas to be treated can be maintained.

In addition, stainless steel, which has corrosion resistance and is a strong material, can be used as the ion implantation electrode material, and the ion implantation electrode material itself can be used as a storage container, resulting in significant cost and space savings.

(Example) Hereinafter, an example of the gas storage R device according to the present invention will be described with reference to FIG.

The same parts as in J3, FIGS. 1 and 2 will be described with the same reference numerals. That is, in FIG. 1, a container is formed by the cylindrical ion implantation electrode 1 and the anode lid 2, and has a sealed structure. The inner surface of the ion implantation electrode 1 is coated with, for example, CtL, Cr, etc. as an intermediate metal layer 3 by plating, vapor deposition, or the like.

The ion implantation electrode 1 and the anode M2 are hermetically insulated by an insulating ring 4, forming a closed container. The interior of the container is an ionization chamber 5, and a cylindrical sputter electrode 6 is placed in the center of the ionization chamber 5, and the sputter electrode 6 is insulated and hermetically sealed from the anode lid 2 by an insulating terminal 7 such as a Hermedic seal.

An intake pipe 8 for introducing radioactive gas and an exhaust pipe 9 for evacuating the inside of the container are connected to the anode lid 2, and the inside of the container is evacuated by a vacuum pump or the like and maintained in a vacuum.

When the exhaust pipe 9 is closed and the intake pipe 8 is opened, a radioactive gas as a gas to be processed is introduced into the ionization chamber. here,
A sputter power supply 10 is connected to the sputter electrode 6, and an ion implantation power supply 11 is connected to the ion implantation electrode 1, and when both power supplies are set to appropriate voltages, glow discharge occurs in the ionization chamber 5. Here, the appropriate voltage is 1 for the sputter power supply 10.
A negative voltage of KV or more, and a negative voltage of 1 KV or less for the ion implantation power supply 11.

The generation of glow discharge in the ionization chamber 5 means that the introduced radioactive gas is in an ionized state, as shown in Figures 3 and 4.
As described above with reference to the operating principle, gas ions existing near the sputtering electrode @6 are accelerated and attracted by the voltage application of the sputtering power source 10, collide with the surface of the sputtering electrode 6, causing sputtering, and causing sputtering. Metal atoms forming the electrode 6 are stacked on the opposing inner surface of the ion implantation electrode 1 to form a cumulative layer 12 of sputtered metal structure.

At the same time, gas ions near the ion implantation electrode 1 are attracted to the ion implantation electrode 1 by the ion implantation power supply 11, and are fixed as gas atoms in the cumulative layer 12 in the process of forming the cumulative layer 12. Ru.

Here, since the inner surface of the ion implantation electrode 1 is coated with the intermediate metal layer 3 as described above, the gas injection cumulative layer 12 is firmly adhered and formed on the intermediate metal layer 3.

As described above, in this embodiment, by providing the intermediate metal layer having strong adhesion horns to the gas injection stack layer on the inner surface of the ion implantation electrode, the bond between the injection stack layer formed during steady operation and the ion implantation electrode is improved. Adhesion can be strengthened, and various problems and device damage caused by peeling off of the formed cumulative layer can be prevented.

[Effect of the invention] According to the present invention, the following effects can be obtained.

(1) The adhesion between the gas-injected cumulative layer and the ion-implanted electrode becomes strong, and the formed cumulative layer does not peel off. As a result, it is possible to prevent abnormal discharge and damage to the device due to the peeled cumulative layer, and it is possible to perform stable gas injection and fixation operation, and to obtain a highly reliable device.

(2) In order to increase the adhesion strength between the ion implantation electrode and the cumulative layer by providing an intermediate metal layer, the ion implantation electrode itself is
Stainless steel, which is edible and strong, can be used, and the ion implantation container itself can be used as a storage container.

As a result, there is no need for a separate storage container, resulting in significant cost and space savings.

(3) Radiation is emitted from the implanted and fixed ionized gas, and the gas-injected cumulative layer itself can become a heating element, so a gas storage device with high cooling efficiency can be achieved by using the ion-implanted electrode itself as a storage container. becomes.

[Brief explanation of the drawing]

Fig. 1 is a block diagram showing an embodiment of the gas storage device according to the present invention, Fig. 2 is a block diagram illustrating a conventional gas storage device, and Figs. 3 and 4 are the principles of Fig. 2. FIG. 1... Ion implantation electrode 2... Anode lid 3... Intermediate metal layer 4... Insulating ring 5... Ionization to 6... Sputter electrode 7... Insulator 8... Intake pipe 9...Exhaust pipe 10...Sputter power source 11...Ion implantation power source 12...Gas injection cumulative layer 13...Gas ions 14...Sputter metal (8733) Agent Patent attorney Sho Inomata Akira (idiot)
1 person)

Claims (1)

[Claims] A sputtering electrode to which a high negative voltage is applied and an ion implantation electrode to which a negative voltage is applied are placed facing each other, and a gas is introduced between the two electrodes to generate a glow discharge. The generated gas ions are accelerated by an electric field and collided with the sputtering electrode to sputter the sputtering electrode with the gas ions, and the sputtered metal atoms generated by this sputtering are attached to the surface of the ion implantation electrode to form a coating layer. In the gas storage device, the gas to be treated is confined in the sputtered metal structure while sequentially injecting gas ions in the step of forming the coating layer, further comprising an intermediate metal layer on the surface of the ion implantation electrode. gas storage equipment.