JPH01255073A - Method and device for checking pattern - Google Patents

Method and device for checking pattern

Info

Publication number
JPH01255073A
JPH01255073A JP63081847A JP8184788A JPH01255073A JP H01255073 A JPH01255073 A JP H01255073A JP 63081847 A JP63081847 A JP 63081847A JP 8184788 A JP8184788 A JP 8184788A JP H01255073 A JPH01255073 A JP H01255073A
Authority
JP
Japan
Prior art keywords
pattern
image
substrate
inspected
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63081847A
Other languages
Japanese (ja)
Inventor
Masahira Tasaka
誠均 田坂
Kiyotaka Inada
稲田 清崇
Shuji Matsumoto
修二 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP63081847A priority Critical patent/JPH01255073A/en
Publication of JPH01255073A publication Critical patent/JPH01255073A/en
Pending legal-status Critical Current

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)

Abstract

PURPOSE:To detect the parts of pictures as defects by detecting a higher density part in the high density part, and a lower density part in the low density part as the pictures. CONSTITUTION:A control device 5 reads a television picture at a standard pattern stored into a picture memory 31. At such a time, the binarization picture at the standard pattern obtained by binarizing the part corresponding to a check object pattern DP in the visual field of a television camera 2 by means of a third slicer 43 is stored into the memory 31. Thereafter, the pattern DP is image-picked-up by the camera 2. A picture signal obtained by the image pickup is once store din the memory 31, successively converted into the binarization picture by respective slicers 41-43, and stored into the memory 31 again. At such a time, by properly selecting the slice level of the respective slicers 41-43, the higher concentration part in the high density part and the lower density part in the low density part can be detected as the defects.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はパターンの欠陥を検出する方法及び装置に関し
、更に詳述すれば、IC基板等にプリントされたパター
ンの検査方法及びこれに使用する装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method and apparatus for detecting pattern defects, and more specifically, a method for inspecting a pattern printed on an IC board, etc., and a method used therefor. Regarding equipment.

〔従来の技術〕  、 IC(集積回路)基板は、たとえばシリコン基板上にレ
ジストを塗布した後、予め配線パターン等が形成されて
いるフォトマスクを密着させた上で露光し、これを現像
して作成するが、近年のICの高密度化、多層化等に伴
って上述のフォトマスクのパターン、あるいはこれによ
りシリコン基板上に形成されたウェハパターンの欠陥検
査が成品の品質管理及び生産性管理等の面から重要な課
題になっている。
[Prior art] An IC (integrated circuit) substrate is produced by applying a resist onto a silicon substrate, exposing it to light after closely adhering it to a photomask on which a wiring pattern, etc. has been formed in advance, and then developing it. However, as ICs have become more dense and multi-layered in recent years, defect inspection of the photomask patterns mentioned above or wafer patterns formed on silicon substrates has become increasingly important for product quality control and productivity control. This has become an important issue from this point of view.

ところで、上述のようなパターン欠陥の検査は従来−船
釣には人間の目視により行われていた。
By the way, inspection for pattern defects as described above has conventionally been carried out by human visual inspection in boat fishing.

しかし、このような方法では、パターン欠陥の見落とし
が皆無とは言えず、このため成品の歩留りの低下及び信
頼性の低下を招来し、更に検査能率及び生産性も高いと
は言い龍い。
However, with this method, it cannot be said that no pattern defects are overlooked, resulting in a decrease in the yield and reliability of finished products, and furthermore, it cannot be said that the inspection efficiency and productivity are high.

このような事情から、本願出願人は先に本願発明者らの
発明に係る特開昭60−200382号公報の発明「パ
ターン検査方法及び装置」を提案している。
Under these circumstances, the applicant of the present application has previously proposed the invention "Pattern inspection method and apparatus" disclosed in Japanese Patent Application Laid-Open No. 60-200382, which is an invention of the inventors of the present application.

この発明は端的には、欠陥の無いパターンを基準パター
ンとし、これの2値化画像と検査対象のパターンの2値
化画像との差分を求めることにより検査対象パターンの
欠陥を検出するものである。
In short, this invention detects defects in the pattern to be inspected by using a defect-free pattern as a reference pattern and calculating the difference between a binary image of this pattern and a binary image of the pattern to be inspected. .

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、上述の発明では、画像の2値化はパターン部
分と背景の基板部分との間の濃度を表す閾値にて行われ
るため、2値化閾値より濃度が高い部分に存在する2硫
化閾値より濃度が低い欠陥及びその逆の欠陥は容易に検
出可能である。しかし、フォトマスクパターンあるいは
ウェハパターン上には、2値化閾値より濃度が低い部分
により濃度が低い欠陥が存在する場合、あるいは2値化
閾値より濃度が高い部分により濃度が高い欠陥が存在す
る場合もしばしば有り得るが、このような欠陥は上述の
発明では検出することが出来ない。
By the way, in the above-mentioned invention, since the binarization of the image is performed using a threshold value that represents the density between the pattern part and the background substrate part, the disulfide threshold value that exists in the part where the density is higher than the binarization threshold value is Defects with low concentration and vice versa are easily detectable. However, on the photomask pattern or wafer pattern, if there are defects with a lower concentration in the part where the density is lower than the binarization threshold, or if there are defects with a higher density in the part with the density higher than the binarization threshold. However, such defects cannot be detected by the above-described invention.

具体的には第9図に示す如くである。即ち、検査対象パ
ターンDPにはやや濃度が高い基板51上にやや濃度が
低い配線パターン52が形成されており、この配線パタ
ーン52が正確に形成されているか否かが検査の対象と
なる。この検査対象パターンDPを基板51の濃度と配
線パターン52の濃度との中間の濃度を閾値として2値
化した画像は第9図にDPOにて示す如くになる。
Specifically, it is as shown in FIG. That is, the pattern to be inspected DP includes a wiring pattern 52 with a slightly lower concentration formed on a substrate 51 with a slightly higher concentration, and whether or not this wiring pattern 52 is formed accurately is the object of inspection. An image obtained by binarizing this pattern DP to be inspected using a density intermediate between the density of the substrate 51 and the density of the wiring pattern 52 as a threshold value is as shown by DPO in FIG.

一方、欠陥が無い標準パターンspを検査対象パターン
DPと同様に2値化した画像は第9図のSPoの如くに
なる。この標準パターンSPの2値化画像spoの各画
素の論理和をとった画像は第9図にSP7!にて示す如
き拡大画像に、また論理積をとった画像は第9図にSP
sにて示す如き縮小画像になる。
On the other hand, an image obtained by binarizing the standard pattern sp, which has no defects, in the same manner as the pattern to be inspected DP, becomes SPo in FIG. The image obtained by calculating the logical sum of each pixel of the binarized image spo of this standard pattern SP is shown in FIG. 9 SP7! The enlarged image as shown in Figure 9 and the logical product image are shown in SP.
This results in a reduced image as shown in s.

そして、検査対象パターンDPの2値化画像DPOから
標準パターンspの拡大2値化画像spzを差引くと第
9図にWlにて示す如き余剰画像が得られるが、これが
余剰欠陥、たとえば配線間の短絡あるいは突起等を表し
ている。また、標準パターンSPの縮小2値化画像SP
sから検査対象パターンDPの2値化画像DPOを差引
くと第9図に−2にて示す如き欠落画像が得られるが、
これが欠落欠陥、たとえば配線の断線あるいは欠損等を
表している。
Then, by subtracting the enlarged binary image spz of the standard pattern sp from the binary image DPO of the pattern to be inspected DP, a surplus image as shown by Wl in FIG. 9 is obtained. represents a short circuit or protrusion, etc. In addition, the reduced binarized image SP of the standard pattern SP
When the binarized image DPO of the pattern DP to be inspected is subtracted from s, a missing image as shown by -2 in FIG. 9 is obtained.
This represents a missing defect, such as a disconnection or defect in the wiring.

このような従来の方法では、基板51上に存在する基板
51より更に濃度が高い欠陥53及び配線パターン52
上に存在する配線パターン52より更に濃度が低い欠陥
54は検査対象パターンDPを2値化する際に基板51
または配線パターン52とそれぞれ同一の値に2値化さ
れるため区別がつかなくなってしまう。従ってこのよう
な従来の方法では、基[51上に存在する基板51より
更に濃度が高い欠陥53及び配線パターン52上に存在
する配線パターン52より更に濃度が低い欠陥54は検
出不可能である。
In such a conventional method, defects 53 and wiring patterns 52 that are present on the substrate 51 and have a higher concentration than the substrate 51 are removed.
Defects 54 having a lower concentration than the wiring pattern 52 existing above are detected on the substrate 51 when the pattern to be inspected DP is binarized.
Alternatively, since they are binarized to the same value as the wiring pattern 52, they become indistinguishable. Therefore, with such a conventional method, it is impossible to detect the defects 53 which are present on the substrate 51 and have a higher concentration than the substrate 51, and the defects 54 which are present on the wiring pattern 52 and have a lower concentration than the wiring pattern 52.

本発明はこのようなフォトマスクパターンあるいはうエ
バパターンの欠陥の内、単純な2値化による検査対象パ
ターンと標準パターンとの比較によっては検出不可能な
濃度が高い部分の中に存在するより濃度が高い欠陥、あ
るいは濃度が低い部分の中に存在するより濃度が低い欠
陥を容易に且つ正確に検出し得るパターン検査方法及び
装置の提供を目的とする。
The present invention detects defects in photomask patterns or evaporation patterns that exist in areas with high concentrations that cannot be detected by comparing the inspection target pattern with a standard pattern by simple binarization. It is an object of the present invention to provide a pattern inspection method and apparatus that can easily and accurately detect defects with a high density or defects with a lower density existing in a lower density part.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のパターン検査方法及び装置は、従来は単純に2
値化されていた検査対象パターンの画像を、基板部分よ
り更に濃度が高い部分(又は低い部分)及びパターン部
分より更に濃度が低い部分(又は高い部分)を画像とし
て得ることが出来るようにしている。
Conventionally, the pattern inspection method and apparatus of the present invention simply
The image of the pattern to be inspected, which has been converted into a value, can be obtained as an image of a part where the density is higher (or lower) than the substrate part and a part where the density is lower (or higher) than the pattern part. .

本発明は、基板上に該基板に比して濃度が低い(又は高
い)パターンが形成された検査対象パタ−ンの欠陥を検
出するパターン検査方法において、前記検査対象パター
ンをパターン部分より低い(又は高い)4度を表す閾値
にて2値化した画像により検出された部分及び前記検査
対象パターンを基板部分より高い(又は低い)濃度を表
す閾値にて2値化した画像により得られた部分を欠陥と
して検出することを特徴とする。
The present invention provides a pattern inspection method for detecting defects in a pattern to be inspected in which a pattern having a lower (or higher) concentration than that of the substrate is formed on a substrate. A portion detected by an image binarized with a threshold value representing 4 degrees (or higher) and a portion obtained by an image binarized with a threshold value representing a higher (or lower) density than the substrate portion of the pattern to be inspected. It is characterized by detecting as a defect.

〔作用〕[Effect]

本発明のパターン検査方法及び装置では、濃度が高い部
分の中で更に濃度が高い部分及び濃度が低い部分の中で
更に濃度が低い部分が画像として得られるので、これら
の部分を欠陥として検出出来る。
In the pattern inspection method and apparatus of the present invention, since a higher density part of a higher density part and a lower density part of a lower density part are obtained as images, these parts can be detected as defects. .

〔発明の原理〕[Principle of the invention]

たとえば、第2図に示す如く、比較的濃度が高い基板5
1上に比較的濃度が低い配線パターン52が形成され、
基板51上に基板51より更に濃度が高い欠陥53が、
また配線パターン52上に配線パターン52より更に濃
度が低い欠陥54が存在する検査対象パターンDPと第
3図に示す如き標準パターンSPとがある場合、それぞ
れの濃度のヒストグラムは第4図及び第5図に示す如(
になる。
For example, as shown in FIG. 2, a relatively high concentration substrate 5
A wiring pattern 52 with relatively low concentration is formed on 1,
There are defects 53 on the substrate 51 that have a higher concentration than the substrate 51.
Further, when there is a pattern to be inspected DP in which a defect 54 having a lower concentration than the wiring pattern 52 exists on the wiring pattern 52 and a standard pattern SP as shown in FIG. As shown in the figure (
become.

即ち、第2図に示す如き検査対象パターンDPの濃度分
布は、最も濃度が低い欠陥54に対応するピークP54
、比較的濃度が低い配線パターン52に対応するピーク
P52、比較的濃度が高い基板51に対応するピークP
51、最も濃度が高い欠陥53に対応するピークP53
の4つのピークを示す。一方、第3図に示す如き標準パ
ターンspの濃度分布は、比較的濃度が低い配線パター
ン52に対応するピークP52、比較的濃度が高い基板
51に対応するピークP51の2つのピークを示す。
That is, the concentration distribution of the inspection target pattern DP as shown in FIG. 2 has a peak P54 corresponding to the defect 54 with the lowest concentration.
, a peak P52 corresponding to the wiring pattern 52 with a relatively low concentration, and a peak P corresponding to the substrate 51 with a relatively high concentration.
51, peak P53 corresponding to defect 53 with the highest concentration
4 peaks are shown. On the other hand, the concentration distribution of the standard pattern sp as shown in FIG. 3 shows two peaks: a peak P52 corresponding to the wiring pattern 52 with a relatively low concentration, and a peak P51 corresponding to the substrate 51 with a relatively high concentration.

従来は、配線パターン52に対応するピークP52と基
板51に対応するピークP51との間の値を閾値↑■0
として2値化していたため、第4図に示されているよう
な欠陥54及び53に対応するピークP54及びP53
はそれぞれ配線パターン52あるいは基板51と同一値
として検出され、欠陥としての検出は不可能であった。
Conventionally, the value between the peak P52 corresponding to the wiring pattern 52 and the peak P51 corresponding to the board 51 is set as a threshold value ↑■0
Since the peaks P54 and P53 corresponding to defects 54 and 53 as shown in FIG.
were detected as having the same value as the wiring pattern 52 or the substrate 51, respectively, and could not be detected as a defect.

しかし、第4図において、欠陥54に対応するピークP
54と配線パターン52に対応するピークP52との間
の値を第1の閾値THIとして2値画像を得れば、配線
パターン52とこれより更に濃度が低い欠陥54との判
別が可能であり、また欠陥53に対応するピークP53
と基板51に対応するピークP51との間の値を第2の
閾値TH2として2値画像を得れば、基板51とこれよ
り更に濃度が高い欠陥53との判別が可能になる。
However, in FIG. 4, the peak P corresponding to the defect 54
54 and the peak P52 corresponding to the wiring pattern 52 is obtained as the first threshold value THI to obtain a binary image, it is possible to distinguish between the wiring pattern 52 and the defect 54 whose density is lower than this, Also, peak P53 corresponding to defect 53
If a binary image is obtained by setting a value between the peak P51 and the peak P51 corresponding to the substrate 51 as the second threshold TH2, it becomes possible to discriminate between the substrate 51 and the defect 53 whose density is higher than this.

以上が本発明の原理であるが、基板51と配線パターン
52との濃度の関係は上述の説明とは逆、即ち比較的濃
度が低い基板51上に比較的濃度が高い配線パターン5
2が形成されている場合にも原理的には同様にそれぞれ
の欠陥を検出することが可能である。
The above is the principle of the present invention, but the relationship between the concentrations of the substrate 51 and the wiring pattern 52 is opposite to the above explanation, that is, the wiring pattern 5 has a relatively high concentration on the substrate 51 with a relatively low concentration.
2 is formed, it is possible in principle to detect each defect in the same way.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明をその実施例を示す図面に基づいて詳述す
る。但し、以下に詳述する実施例では、検査対象パター
ンDPの基板51は配線パターン52に比して相対的に
濃度が高いものとする。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on drawings showing embodiments thereof. However, in the embodiment described in detail below, it is assumed that the substrate 51 of the pattern to be inspected DP has a relatively higher concentration than the wiring pattern 52.

第6図は本発明に係るパターン検査方法の実施に使用さ
れる装置の構成を示すブロック図である。
FIG. 6 is a block diagram showing the configuration of an apparatus used to implement the pattern inspection method according to the present invention.

図中1は検査台であり、図示しない基盤上に水平に固定
されている固定台IBと、この固定台IB上に支持され
ていて図上で奥行き方向(X方向)へ移動するXステー
ジIXと、このXステージIXに支持されていて図上で
X方向と直交する左右方向(Y方向)へ移動するYステ
ージIYと、更には固定台IBに固定されていてXステ
ージIXを固定台IBに対してX方向に移動させるため
のXステージ駆動モータMXと、XステージIXに固定
されていてYステージIYをY方向へ移動させるための
Yステージ駆動モータMY等にて構成され、Yステージ
IY上に被検体である検査対象パターンDI’が載置さ
れている。
Reference numeral 1 in the figure is an inspection table, which includes a fixed base IB horizontally fixed on a base (not shown) and an X stage IX supported on the fixed base IB and moved in the depth direction (X direction) in the figure. , Y stage IY is supported by this X stage IX and moves in the left-right direction (Y direction) perpendicular to the X direction in the figure, and furthermore, it is fixed to fixed base IB and X stage IX is moved to fixed base IB. The Y stage drive motor MX is configured to move the Y stage IY in the Y direction, and the Y stage drive motor MY is fixed to the X stage IX and is fixed to the A pattern to be inspected DI', which is an object to be inspected, is placed thereon.

従って、YステージIY上に載置されている検査対象パ
ターンDPは2次元方向への移動が可能である。
Therefore, the pattern to be inspected DP placed on the Y stage IY can be moved in two-dimensional directions.

なお、Xステージ駆動モータMX及びYステージ駆動モ
ータMYはそれぞれの駆動回路DX及びDYにより駆動
される。
Note that the X stage drive motor MX and Y stage drive motor MY are driven by respective drive circuits DX and DY.

検査台1の上方には2次元撮像装置、たとえばテレビジ
ョンカメラ2がそのレンズ系の光軸を垂直下方向きとし
て図示しない適宜の除振装置を介して固定されている。
A two-dimensional imaging device, such as a television camera 2, is fixed above the examination table 1 with the optical axis of its lens system pointing vertically downward via an appropriate vibration isolator (not shown).

このテレビジョンカメラ2にはオートフォーカス(AP
)センサ2S及びAP駆動モータ2Mが備えられており
、AFセンサ2Sの検出信号が針制御装置2Cに与えら
れることにより制御信号がこの針制御装置2Cから駆動
回路2Dに出力され、これによりAP駆動モータ2Mが
駆動されてオートフォーカス制御が実行される。
This television camera 2 has autofocus (AP)
) A sensor 2S and an AP drive motor 2M are provided, and when the detection signal of the AF sensor 2S is given to the needle control device 2C, a control signal is outputted from the needle control device 2C to the drive circuit 2D, and thereby the AP drive The motor 2M is driven to perform autofocus control.

テレビジョンカメラ2により撮像された画像信号は画像
処理装置3に与えられる。
An image signal captured by the television camera 2 is given to an image processing device 3.

画像処理装置3は、画像メモリ31、拡大・縮小回路3
2、画像演算回路33、画像処理コントローラ34及び
スライサ41〜43  等に構成されている。
The image processing device 3 includes an image memory 31 and an enlargement/reduction circuit 3.
2, an image calculation circuit 33, an image processing controller 34, slicers 41 to 43, and the like.

この画像処理装置3は、テレビジョンカメラ2により撮
像された検査対象パターンDPの画像を画像メモリ31
に一旦蓄え、この画像をそれぞれ異なる閾値をスライス
レベルとする第1〜第3のスライサ41〜43により2
値化し、それぞれの2値化画像を画像メモリ31に格納
する。この際の第1〜第3のスライサ41〜43のスラ
イスレベルは、前述の〔発明の原理〕の項で既述した第
1の閾値THI、第2の閾値TH2,基準の閾値THO
である。
This image processing device 3 stores an image of the pattern to be inspected DP captured by the television camera 2 in an image memory 31.
This image is once stored in the first to third slicers 41 to 43, each having a different threshold value as the slice level.
The images are digitized and each binarized image is stored in the image memory 31. At this time, the slice levels of the first to third slicers 41 to 43 are the first threshold value THI, the second threshold value TH2, and the reference threshold value THO, which have already been described in the [Principle of the Invention] section.
It is.

第1のスライサ41のスライスレベルは前述の第1の閾
値Tl+ 1 、即ち配線パターン52とこれより濃度
が低い欠陥54との間の濃度を表す値に設定されており
、この第1のスライサ41による2値化画像DPIは配
線パターン52とこの配線パターン52中に存在するよ
り濃度が低い欠陥54とを表す。また、第2のスライサ
42のスライスレベルは前述の第2の閾値TI(2、即
ち基板51とこれより濃度が高い欠陥53との間の濃度
を表す値に設定されており、この第2のスライ+42に
よる2値化画像DP2は基板51とこの基板51中に存
在するより濃度が高い欠陥53とを表す。更に、第3の
スライサ43のスライスレベルは前述の基準閾値THO
に設定されており、この第3のスライサ43による2値
化画像DPOは基板51と配線パターン52とを表す。
The slice level of the first slicer 41 is set to the aforementioned first threshold value Tl+1, that is, the value representing the concentration between the wiring pattern 52 and the defect 54 whose concentration is lower than this. The binarized image DPI represents a wiring pattern 52 and a defect 54 with a lower density than that existing in this wiring pattern 52. Further, the slice level of the second slicer 42 is set to the aforementioned second threshold TI (2, that is, a value representing the concentration between the substrate 51 and the defect 53 having a higher concentration than this, and this second A binarized image DP2 obtained by slicing +42 represents the substrate 51 and a defect 53 with a higher density present in the substrate 51.Furthermore, the slice level of the third slicer 43 is set to the reference threshold value THO described above.
The binarized image DPO produced by this third slicer 43 represents the substrate 51 and the wiring pattern 52.

三方、標準パターンSPも予め画像メモリ31に格納さ
れており、画像処理装置3は標準パターンspを第3の
スライサ43にて2値化した2値化画像SPOを更に拡
大・縮小回路32により標準パターンspを拡大及び縮
小し、この標準パターンspの拡大2値化画像SP7!
及び縮小2値化画像SPsと検査対象パターンDPの基
準の閾値THOによる2値化画像DPOとを画像演算回
路33にて演算することにより検査対象パターンDPの
欠陥を検出するものである。
On the other hand, the standard pattern SP is also stored in the image memory 31 in advance, and the image processing device 3 converts the standard pattern SP into a binary image SPO by the third slicer 43, and further converts the standard pattern SP into a standard image by the enlarging/reducing circuit 32. The pattern sp is enlarged and reduced, and an enlarged binarized image SP7 of this standard pattern sp!
Defects in the pattern to be inspected DP are detected by calculating the reduced binarized image SPs and the binary image DPO based on the reference threshold value THO of the pattern to be inspected DP in the image calculation circuit 33.

また制御装置5は上述の画像処理に先立って画像演算回
路33に指令を与えて検査対象パターンDPのテレビジ
ョンカメラ2の視野内における位置補正を行い、また検
査台制御装置6を介して前述のXステージ駆動モータM
X及びYステージ駆動モータMYの駆動回路DX及びD
Yを駆動制御することにより、検査対象パターンDPを
x、y両方向へ順次移動させつつテレビジョン男メラ2
に検査対象パターンDPを撮像させる。そして、更に制
御装置5は前述の画像処理装置3に指令を与えてテレビ
ジョンカメラ2が撮像した画像の処理を行わせる。
In addition, the control device 5 gives a command to the image calculation circuit 33 to correct the position of the pattern to be inspected DP within the field of view of the television camera 2 prior to the above-mentioned image processing, and also transmits the above-mentioned X stage drive motor M
Drive circuits DX and D for X and Y stage drive motors MY
By driving and controlling Y, the pattern to be inspected DP is sequentially moved in both the x and y directions while
The pattern to be inspected DP is imaged. Further, the control device 5 gives a command to the above-mentioned image processing device 3 to process the image captured by the television camera 2.

なお、制御装置5は上述のような種々の制御のためのデ
ータを内蔵されているROM等の記憶装置に予め格納し
ている。
Note that the control device 5 stores in advance data for various controls as described above in a built-in storage device such as a ROM.

また、画像表示装置7は画像メモリ31に格納されてい
る各種の画像を適宜表示し、また表示装置8はその他の
種々の表示を行う。
Further, the image display device 7 appropriately displays various images stored in the image memory 31, and the display device 8 performs other various displays.

次に、以上の如く構成された本発明装置の動作について
、検査手順を示す第7図のフローチャート及び第8図の
各種のパターンの模式図を参照して以下に説明する。
Next, the operation of the apparatus of the present invention configured as described above will be explained below with reference to the flowchart of FIG. 7 showing the inspection procedure and the schematic diagrams of various patterns shown in FIG.

まず、制御装置5は検査台1のトラバースデータを読出
し、これに基づいて検査台1を初期位置に移動させる。
First, the control device 5 reads the traverse data of the inspection table 1, and moves the inspection table 1 to the initial position based on this.

次に制御装置5は画像メモリ31に予め格納されている
標準パターンSPのテレビジョン画像を読出し、その時
点でテレビジョンカメラ2の視野内にある検査対象パタ
ーンDPの範囲に対応する部分を第3のスライサ431
ごより2値化した標準パターンspの2値化画像spo
を画像メ3す31に格納する。
Next, the control device 5 reads out the television image of the standard pattern SP stored in the image memory 31 in advance, and selects the portion corresponding to the range of the pattern to be inspected DP that is within the field of view of the television camera 2 at that time. slicer 431
Binarized image spo of the standard pattern sp
is stored in the image memory 31.

この後、制御装置5は種々の制御データをROMから読
出し、検査対象パターン叶の撮像をテレビジジンカメラ
2に行わせる。この撮像により得られた画像信号は一旦
画像メモリ31に格納され、順次各スライサ41〜43
により2値化画像に変換されてそれぞれ画像メモリ31
に再格納される。
Thereafter, the control device 5 reads various control data from the ROM and causes the television camera 2 to take an image of the pattern leaf to be inspected. The image signal obtained by this imaging is temporarily stored in the image memory 31, and is sequentially transferred to each slicer 41 to 43.
are converted into binary images and stored in the image memory 31.
will be restored.

ところで、いま検査対象パターンDPが第8図に示す如
き状態であるとする。即ち、この検査対象パターンDP
は、基板51の右端部から中央部へかけて棒状の配線パ
ターン52が位置し、この配線パターン52上に配線パ
ターン52より更に濃度が低い欠陥54が存在し、また
配線パターン52と重畳しない基板51上に基板51よ
り濃度が高い欠陥53が存在している。更に、配線パタ
ーン52にはその上側に欠損欠陥55及び下側に余剰欠
陥56がそれぞれ存在している。
By the way, it is now assumed that the pattern DP to be inspected is in a state as shown in FIG. That is, this pattern to be inspected DP
In this case, a bar-shaped wiring pattern 52 is located from the right end to the center of the substrate 51, and a defect 54 with a lower concentration than the wiring pattern 52 exists on the wiring pattern 52, and the substrate does not overlap with the wiring pattern 52. Defects 53 having a higher concentration than the substrate 51 exist on the substrate 51 . Furthermore, the wiring pattern 52 has a missing defect 55 on its upper side and a redundant defect 56 on its lower side.

このような検査対象パターンDPでは、基板51と基板
51より更に濃度が高い欠陥53のみを通る直線A−A
及び配線パターン52とこれより更に濃度が低い欠陥5
4とを通る直線a−aでの濃度分布は第1図に示す如く
になる。即ち、B−Bにて示す基板51の濃度を基準と
すれば、直線A−Aでの欠陥53の濃度は基準の直線B
−Bから更に濃度が高い側へ突出しており、直線a−a
での欠陥54は基準の直線B−Bから濃度が低い側へ突
出した配線パターン52の濃度のピークを示す直線b−
bより更に突出している。
In such a pattern to be inspected DP, a straight line A-A passes only through the substrate 51 and the defect 53, which has a higher concentration than the substrate 51.
and a wiring pattern 52 and a defect 5 with a lower concentration than this.
The concentration distribution along the straight line aa passing through 4 is as shown in FIG. That is, if the concentration of the substrate 51 shown by B-B is used as a reference, the concentration of defects 53 on straight line A-A is equal to the standard straight line B.
-Protrudes from B to the side with higher concentration, and the straight line a-a
The defect 54 in FIG.
It is even more prominent than b.

従って、基板51の濃度B−Bと配線パターン52の濃
度b−bとの中間値を基準閾値Tll0とし、この基準
閾値THOをスライスレベルとする第3のスライサ43
にて検査対象パターンDPの画像を2値化した画像DP
Oを得て、前述した従来技術同様に標準パターンspの
縮小2値化画像SPs及び拡大2値化画像5PI2との
差分をとれば、検査対象パターン検査上の配線パターン
52の欠損欠陥55及び余剰欠陥56が欠陥として検出
出来る。
Therefore, the third slicer 43 sets the intermediate value between the density B-B of the substrate 51 and the density b-b of the wiring pattern 52 as the reference threshold value Tll0, and sets this reference threshold value THO as the slice level.
An image DP obtained by binarizing the image of the pattern DP to be inspected at
If O is obtained and the difference is taken between the reduced binary image SPs and the enlarged binary image 5PI2 of the standard pattern sp as in the prior art described above, the missing defect 55 and the surplus of the wiring pattern 52 on the inspection target pattern inspection are obtained. Defect 56 can be detected as a defect.

一方、配線パターン52の濃度のピークb−bとこれよ
り濃度が低い欠陥54の濃度のピークC−Cとの中間の
濃度を第1の閾値THIとし、この閾値T1目をスライ
スレベルとする第1のスライサ41により検査対象パタ
ーンDPを2値化した画像DPIを得れば、配線パター
ン52上にあってより濃度が低い欠陥54が検出される
On the other hand, the intermediate concentration between the concentration peak bb of the wiring pattern 52 and the concentration peak C-C of the defect 54 having a lower concentration is set as a first threshold value THI, and the first threshold value T1 is set as the slice level. If an image DPI obtained by converting the pattern to be inspected DP into a binary value is obtained by the slicer 41 of No. 1, a defect 54 having a lower density on the wiring pattern 52 is detected.

更に、基板51のピークB−Bとこれより濃度が高い欠
陥53のピークI)−Dとの中間の濃度を第2の閾値T
)+2とし、この第2の閾値TH2をスライスレベルと
する第2のスライサ42により検査対象パターンDPを
2値化した画像叶2を得れば、基板51上にあってより
濃度が高い欠陥53が検出される。
Further, the intermediate concentration between the peak B-B of the substrate 51 and the peak I)-D of the defect 53, which has a higher concentration, is set as a second threshold T.
)+2, and if an image plane 2 is obtained by binarizing the inspection target pattern DP by the second slicer 42 with this second threshold value TH2 as the slice level, then the defect 53 on the substrate 51 with a higher density is obtained. is detected.

実際の手順としては、第1のスライサ41及び第2のス
ライサ42によりそれぞれ2値化画像を得て両欠陥53
.54を検出し、この後第3のスライサ53にて基準閾
値THOによる検査対象パターンDPの2値化ii!i
i像DPIを得、これを画像演算回路33による位置補
正の後、標準パターンspの拡大2値化画像spρ及び
縮小2値化画像SPsとの差分をそれぞれ求めた画像町
及び−2を得、欠陥判定を行う。
The actual procedure is to obtain binarized images by the first slicer 41 and the second slicer 42, and to remove both defects 53.
.. 54, and then the third slicer 53 binarizes the pattern DP to be inspected using the reference threshold THO ii! i
i-image DPI is obtained, and after the position is corrected by the image calculation circuit 33, the image town and -2 are obtained by calculating the difference between the enlarged binarized image spρ and the reduced binarized image SPs of the standard pattern sp, Perform defect judgment.

この後、制御装置5はトラバースデータに従ってXステ
ージIX及びYステージIYを移動させてテレビジョン
カメラ2に次の視野を撮像させ、上述同様の画像処理及
び結果判定を反復する。
Thereafter, the control device 5 moves the X stage IX and the Y stage IY according to the traverse data, causes the television camera 2 to image the next field of view, and repeats the same image processing and result determination as described above.

なお、上記実施例では、基板51の濃度が配線パターン
52の濃度より相対的に高い場合の実施例について説明
したが、この濃度の関係は全く逆の場合にも本発明は通
用可能である。
In the above embodiment, an example in which the concentration of the substrate 51 is relatively higher than that of the wiring pattern 52 has been described, but the present invention is also applicable to a case where the concentration relationship is completely reversed.

また上記実施例では相ことなる3つの閾値により検査対
象パターンDPの2値化画像を得るようにしているが、
同時に3つの閾値にて4値化画像を得るようにしてもよ
いことは勿論である。
Furthermore, in the above embodiment, a binarized image of the pattern to be inspected DP is obtained using three different threshold values;
Of course, a quaternary image may be obtained using three threshold values at the same time.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、単に配線パターンの欠損
部分及び余剰部分を欠陥として検出するのみならず、従
来は検出不可能であった基板上のより濃度が高い(又は
低い)欠陥及び配線パターン上のより濃度が低い(又は
高い)欠陥をも検出可能になり、より厳密なパターン検
査が可能になる。
As described above, according to the present invention, not only missing portions and surplus portions of wiring patterns can be detected as defects, but also defects and wiring with higher (or lower) concentration on the substrate that could not be detected conventionally. It becomes possible to detect defects with a lower (or higher) concentration on a pattern, and more rigorous pattern inspection becomes possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による検査対象としての検査対象パター
ンの模式図とその2値化の際の3つの閾値を示す濃度の
グラフ、第2図は同じく検査対象パターンの模式図、第
3図は第2図の検査対象パターンに対応する標準パター
ンの模式図、第4図は第2図の検査対象パターンの濃度
分布を示すグラフ、第5図は第3図の標準パターンの濃
度分布を示すグラフ、第6図は本発明装置の構成を示す
ブロック図、第7図はその動作手順を示すフローチャー
ト、第8図は同じくその動作手順を示す各種の画像の模
式図、第9図は従来技術の説明図である。 2・・・テレビジョンカメラ  3・・・画像処理装置
41、42・・・スライサ  51・・・基板  52
・・・配線パターン  53・・・より濃度が高い欠陥
  54・・・より濃度が低い欠陥
FIG. 1 is a schematic diagram of a pattern to be inspected as an inspection target according to the present invention and a density graph showing three threshold values for its binarization, FIG. 2 is a schematic diagram of the pattern to be inspected, and FIG. Figure 2 is a schematic diagram of a standard pattern corresponding to the pattern to be inspected, Figure 4 is a graph showing the density distribution of the pattern to be inspected in Figure 2, and Figure 5 is a graph showing the density distribution of the standard pattern in Figure 3. , FIG. 6 is a block diagram showing the configuration of the device of the present invention, FIG. 7 is a flowchart showing its operating procedure, FIG. 8 is a schematic diagram of various images similarly showing its operating procedure, and FIG. 9 is a diagram of the prior art. It is an explanatory diagram. 2... Television camera 3... Image processing devices 41, 42... Slicer 51... Board 52
...Wiring pattern 53...Defects with higher concentration 54...Defects with lower concentration

Claims (1)

【特許請求の範囲】 1、基板上に該基板に比して濃度が低い(又は高い)パ
ターンが形成された検査対象パターンの欠陥を検出する
パターン検査方法において、 前記検査対象パターンをパターン部分より 低い(又は高い)濃度を表す閾値にて2値化した画像に
より検出された部分及び前記検査対象パターンを基板部
分より高い(又は低い)濃度を表す閾値にて2値化した
画像により得られた部分を欠陥として検出することを特
徴とするパターン検査方法。 2、基板上に該基板に比して濃度が低い(又は高い)パ
ターンが形成された検査対象パターンを撮像する撮像装
置と、 該撮像装置にて撮像された検査対象パター ンの画像を、前記パターン部分より低い(又は高い)濃
度を表す第1の閾値にて2値化する第1の画像2値化回
路と、 前記撮像装置にて撮像された検査対象パタ ーンの画像を、前記基板部分より高い(又は低い)濃度
を表す第2の閾値にて2値化する第2の画像2値化回路
とを備え、 前記両画像2値化回路により得られた2値 化画像から前記検査対象パターンの欠陥を検出すべくな
したことを特徴とするパターン検査装置。
[Claims] 1. In a pattern inspection method for detecting defects in a pattern to be inspected in which a pattern with a lower (or higher) concentration than that of the substrate is formed on a substrate, the pattern to be inspected is inspected from a pattern portion. A portion detected by an image binarized with a threshold value representing a low (or high) density and an image obtained by binarizing the inspection target pattern with a threshold value representing a higher (or lower) density than the substrate portion. A pattern inspection method characterized by detecting a portion as a defect. 2. An imaging device that images a pattern to be inspected in which a pattern with a density lower (or higher) than that of the substrate is formed on a substrate; and an image of the pattern to be inspected captured by the imaging device, a first image binarization circuit that binarizes an image of the pattern to be inspected captured by the imaging device using a first threshold representing a density lower (or higher) than the substrate part; a second image binarization circuit that binarizes the image using a second threshold representing (or low) density; A pattern inspection device characterized in that it is designed to detect defects.
JP63081847A 1988-04-01 1988-04-01 Method and device for checking pattern Pending JPH01255073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63081847A JPH01255073A (en) 1988-04-01 1988-04-01 Method and device for checking pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63081847A JPH01255073A (en) 1988-04-01 1988-04-01 Method and device for checking pattern

Publications (1)

Publication Number Publication Date
JPH01255073A true JPH01255073A (en) 1989-10-11

Family

ID=13757871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63081847A Pending JPH01255073A (en) 1988-04-01 1988-04-01 Method and device for checking pattern

Country Status (1)

Country Link
JP (1) JPH01255073A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274136A (en) * 1995-03-31 1996-10-18 Ishikawa Pref Gov Hybrid ic inspection device
WO2000052644A1 (en) * 1999-02-26 2000-09-08 Hitachi, Ltd. Pattern inspecting method and its device
JP2008116337A (en) * 2006-11-06 2008-05-22 Yamatake Corp Visual inspection method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274136A (en) * 1995-03-31 1996-10-18 Ishikawa Pref Gov Hybrid ic inspection device
WO2000052644A1 (en) * 1999-02-26 2000-09-08 Hitachi, Ltd. Pattern inspecting method and its device
JP2008116337A (en) * 2006-11-06 2008-05-22 Yamatake Corp Visual inspection method

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