JPH01239403A - Film thickness measuring method - Google Patents

Film thickness measuring method

Info

Publication number
JPH01239403A
JPH01239403A JP6681088A JP6681088A JPH01239403A JP H01239403 A JPH01239403 A JP H01239403A JP 6681088 A JP6681088 A JP 6681088A JP 6681088 A JP6681088 A JP 6681088A JP H01239403 A JPH01239403 A JP H01239403A
Authority
JP
Japan
Prior art keywords
plating
film thickness
frequency
film
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6681088A
Other languages
Japanese (ja)
Inventor
Takahide Sakamoto
隆秀 坂本
Yoshihiro Mori
森 好宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP6681088A priority Critical patent/JPH01239403A/en
Publication of JPH01239403A publication Critical patent/JPH01239403A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To accurately measure plating thickness by inducing an eddy current with a relatively high frequency current when the plating thickness is small or with a low frequency current when large. CONSTITUTION:A coil 1 is fitted to a substrate 1 where a plating film 3 is to be formed in a plating tank 4, and an impedance measuring instrument 5 having an oscillation source which generates two kinds of frequency is connected thereto. Then when the plating thickness is small, the eddy current is induced with the relatively high frequency current of, for example, 8MHz and the film thickness is measured, so that the impedance value varies greatly even in response to even slight film thickness variation. Further, when a 4MHz low frequency is used after the plating thickness increases, the entry of the impedance value into a saturation state can be evaded. Consequently, an accurate measurement is taken by varying the frequency with the film thickness.

Description

【発明の詳細な説明】 〔産業上の利用分野] 本発明は電磁誘導法によるめっき皮膜の膜厚測定方法に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for measuring the thickness of a plating film using an electromagnetic induction method.

〔従来の技術〕[Conventional technology]

めっきを施した製品は、装飾・機能等の品質管理面より
その皮膜の厚みが重視されることが多い。
For plated products, the thickness of the coating is often more important than quality control aspects such as decoration and functionality.

電気めっきの場合に皮膜の厚みに影響を与える主因子と
しては、めっき浴の組成、PI(、攪拌条件、浴温度、
電流密度分布、めっき時間等があり、これらの主因子を
一定に保つことができれば、理論上、一定膜厚のめっき
皮膜を形成することが可能となる。
In the case of electroplating, the main factors that affect the thickness of the film are the composition of the plating bath, PI (, stirring conditions, bath temperature,
There are current density distribution, plating time, etc., and if these main factors can be kept constant, it is theoretically possible to form a plating film with a constant thickness.

しかし、実際上、上記諸因子を厳密に一定に保つことは
不可能に近いため、従来、めっき後に電磁誘導法等によ
り膜厚を測定し、所望の膜厚が得られるようにめっき条
件を修正する方法が採られている。電磁誘導法による膜
厚測定は、めっき皮膜に臨ませたコイルに高周波電流を
通電し°Cめっき皮膜に渦電流を誘起せしめると、コイ
ルはめっき厚に応じたインピーダンス値を示すことを利
用するものである。
However, in practice, it is almost impossible to keep the above factors strictly constant, so conventionally, the film thickness is measured by electromagnetic induction method etc. after plating, and the plating conditions are modified to obtain the desired film thickness. A method has been adopted to do so. Film thickness measurement using the electromagnetic induction method utilizes the fact that when a high-frequency current is passed through a coil facing the plating film to induce eddy currents in the °C plating film, the coil exhibits an impedance value that corresponds to the plating thickness. It is.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、従来の電V!、誘導法による膜厚測定方法では
、めっき途中において膜厚を正確に求めることはできな
かった。このため、量産めっきの場合、めっき終了時に
膜厚に関し仕様を外れた不良品が大量に発生するという
問題があった。第3図は、電磁誘導法による膜厚測定に
おけるめっき厚とインピーダンス値との相関を、横軸に
めっき厚(μm)を、また、縦軸にインピーダンス値(
任意目盛)をとって表したグラフである。図にみるよう
に、用いる高周波電流の周波数が例えば8Mt(zと高
い場合(図中A)、めっき厚が一定値以上に厚くなると
、それ以上めっき厚が厚くなってもコイルのインピーダ
ンス値が変化しなくなる、所謂飽和現象が現れている。
However, the conventional electric V! However, with the film thickness measurement method using the induction method, it was not possible to accurately determine the film thickness during the plating process. For this reason, in the case of mass-produced plating, there is a problem in that a large number of defective products whose film thickness does not meet specifications are produced at the end of plating. Figure 3 shows the correlation between plating thickness and impedance value in film thickness measurement using the electromagnetic induction method, with plating thickness (μm) on the horizontal axis and impedance value (μm) on the vertical axis.
This is a graph expressed using an arbitrary scale. As shown in the figure, when the frequency of the high-frequency current used is high, for example 8Mt (z) (A in the figure), if the plating thickness becomes thicker than a certain value, the impedance value of the coil will change even if the plating thickness becomes thicker. The so-called saturation phenomenon is occurring.

従って、飽和時以降に周波数が高い高周波電流を通電し
て測定された膜厚は信頬性に乏しいことになる。これが
従来、膜厚を正確に求め得なかった第一の理由である。
Therefore, the film thickness measured by applying a high frequency current after saturation is not reliable. This is the first reason why film thickness could not be accurately determined in the past.

一方、用いる高周波電流の周波数が例えば4MHzと低
い場合(図中B)、膜厚変化に伴うインピーダンス値の
変化が高周波の場合に比べて小さくなっている。従って
、めっき厚が薄い場合、周波数が低い高周波電流を通電
して膜厚測定することは測定精度の低下につながる。こ
れが従来、膜厚を正確に求め得なかった第二の理由であ
る。
On the other hand, when the frequency of the high-frequency current used is low, for example, 4 MHz (B in the figure), the change in impedance value due to the change in film thickness is smaller than when the frequency is high. Therefore, when the plating thickness is thin, measuring the film thickness by passing a high-frequency current with a low frequency leads to a decrease in measurement accuracy. This is the second reason why film thickness could not be determined accurately in the past.

以上の理由から明らかなように、測定精度が悪いという
従来方法における問題は、膜厚すなわち成膜の進行度に
応じて測定に用いる高周波電流の周波数を異にするよう
にすれば解消し得る筈である。
As is clear from the above reasons, the problem with conventional methods of poor measurement accuracy could be solved by changing the frequency of the high-frequency current used for measurement depending on the film thickness, that is, the progress of film formation. It is.

°また、第一の理由で述べたことを換言すれば、用いる
高周波電流の周波数が同じ場合、電気的特性が等しいめ
っき皮膜については、コイルのインピーダンスの飽和値
は等しい値を示すということである。従って、実測に用
いる周波数の高周波電流でめっき皮膜と電気的特性が等
しい試料について予め求めておいたコイルのインピーダ
ンスの飽和値と、実測対象について求めたインピーダン
スの飽和値との差異は、実測時の誤差要因に起因するも
のであると言うことができる。従って、この差異を利用
すれば膜厚の測定値をめっき途中において補正すること
ができ、依って爾後のめっき時間等のめっき条件を適切
に調整し得て最終的に所望の膜厚のめっき皮膜を精度良
く得ることが可能、となる。
°Also, to put what I said in the first reason, if the frequency of the high-frequency current used is the same, the saturation values of the impedance of the coils will be the same for plating films with the same electrical characteristics. . Therefore, the difference between the impedance saturation value of the coil determined in advance for a sample with the same electrical characteristics as the plating film using a high-frequency current at the frequency used in the actual measurement, and the impedance saturation value determined for the actual measurement target is It can be said that this is due to error factors. Therefore, by using this difference, the measured value of film thickness can be corrected during plating, and the subsequent plating conditions such as plating time can be appropriately adjusted, and the final plating film with the desired thickness can be obtained. It is possible to obtain with high accuracy.

本発明は以上の知見に基づいてなされたものであって、
めっき厚に応じて用いるべき周波数を変更することによ
り、めっき厚を精度良く求めることができ、また、コイ
ルのインピーダンス値がめつき途中において飽和するよ
うに高周波電流の周波数を選定し、めっき途中において
測定したインピーダンスの飽和値と予め求めておいたイ
ンピーダンスの標準飽和値とを比較してめっき途中にお
いて測定した膜厚値を補正することにより、正確な膜厚
測定をなし得、所望の膜厚のめっき皮膜を得ることが可
能な電fli誘導法による膜厚測定方法を提供すること
を目的とする。
The present invention was made based on the above findings, and
By changing the frequency to be used according to the plating thickness, the plating thickness can be determined with high accuracy.In addition, the frequency of the high-frequency current is selected so that the impedance value of the coil is saturated during the plating, and the measurement is performed during the plating. By comparing the measured impedance saturation value with a predetermined standard impedance saturation value and correcting the film thickness value measured during plating, accurate film thickness measurement can be achieved and plating with the desired film thickness can be achieved. It is an object of the present invention to provide a method for measuring film thickness using an electrofli induction method, which can obtain a film.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するため、請求項1記載の発明は、めっ
き皮膜に渦電流を誘起させ、これに臨ませたコイルのイ
ンピーダンス値で膜厚を測定する方法において、めっき
厚が薄い間は、比較的高い周波数の高周波電流で、また
、めっき厚が厚くなった後は、比較的低い周波数の高周
波電流で渦電流を誘起せしめることを特徴とし、また、
請求項2記載の発明は、めっき皮膜に渦電流を誘起させ
、これに臨ませたコイルのインピーダンス値で膜厚を測
定する方法において、めっき途中においてコイルのイン
ピーダンス値が飽和状態を示す周波数の高周波電流でめ
っき皮膜に渦電流を誘起させて求めたインピーダンスの
飽和値Eと、同じ周波数の高周波電流でめっき皮膜と電
磁的特性が等しい標準試料について予め求めておいた前
記コイルのインピーダンスの飽和値EStとから、式:
Tc−T (Est/E)(但し、Tcは膜厚の補正値
)に基づき前記コイルのインピーダンス値によって求め
た膜厚Tを補正することを特徴とする。
In order to achieve the above object, the invention according to claim 1 provides a method for inducing eddy current in a plating film and measuring the film thickness by the impedance value of a coil facing the eddy current. It is characterized by inducing an eddy current with a high frequency current at a relatively high frequency, and after the plating thickness becomes thick, a high frequency current at a relatively low frequency.
The invention according to claim 2 provides a method for inducing eddy currents in a plating film and measuring the film thickness by the impedance value of a coil placed in front of the eddy current, in which a high-frequency wave at a frequency at which the impedance value of the coil is saturated during plating is provided. The impedance saturation value E obtained by inducing eddy current in the plating film with an electric current, and the impedance saturation value ESt of the coil previously obtained using a high-frequency current of the same frequency for a standard sample having the same electromagnetic characteristics as the plating film. From, the formula:
The present invention is characterized in that the film thickness T determined by the impedance value of the coil is corrected based on Tc-T (Est/E) (where Tc is a film thickness correction value).

[作用] 以上の如く請求項1記載の発明においては、周波数の異
なる高周波電流、すなわち、めっき厚が薄い間は周波数
が高い高周波電流を通電するため、僅かの膜厚変化にも
インピーダンスの変化が大きく現れ、めっき厚が厚くな
った後は周波数が低い高周波電流を通電するため、イン
ピーダンスが飽和状態になることはない。また、請求項
2記載の発明においては、めっき途中において測定した
インピーダンスの飽和値Eと、予め求めておいた前記コ
イルのインピーダンスの標準飽和値B itとを比較し
て膜厚の測定値を補正するため、最終的に所望の膜厚の
めっき皮膜を得ることができる。
[Function] As described above, in the invention according to claim 1, since high frequency currents with different frequencies, that is, high frequency currents with high frequencies are passed while the plating thickness is thin, impedance changes even with a slight change in film thickness. After the plating becomes thicker and the plating thickness becomes thicker, a high-frequency current with a lower frequency is passed, so the impedance never becomes saturated. Further, in the invention according to claim 2, the measured value of the film thickness is corrected by comparing the impedance saturation value E measured during the plating with a standard impedance saturation value B it of the coil determined in advance. Therefore, it is possible to finally obtain a plating film with a desired thickness.

(発明の原理〕 以下、本発明の原理について説明する。(Principle of invention) The principle of the present invention will be explained below.

交流磁界はめっき皮膜等の導体内で減衰し、平面波の場
合、その減衰後の磁界の強さHは次式で表される。
The alternating current magnetic field is attenuated within a conductor such as a plating film, and in the case of a plane wave, the strength H of the magnetic field after the attenuation is expressed by the following equation.

H−H,exp(X/ δ)exp(j  X/ δ”
)−(1)ここで、Ho:めっき皮膜表面の磁界の強さ
、δ= [2/(ωμσ)]””、磁界の浸透深さ、 ω=2πf :交流の角周波数、 μ:めっき皮膜の透磁率、 σ:めっき皮膜の導電率、 f :交流の周波数 である。膜厚が薄い間は、周波数を高くする方が表皮効
果より、周波数が低い場合に比べて膜厚の変化に伴うイ
ンピーダンス値の変化が大きいため測定精度を上げるこ
とができるが、(1)式より明らかなように、導体内で
の磁界の減衰は周波数が高いほど大きくなる。従って、
周波数が比較的高い高周波電流を用いた場合、成膜が進
み、一定膜厚以上になると膜厚に差異があってもインピ
ーダンス値に差異が現れないという飽和現象が発生する
H−H,exp(X/δ)exp(j X/δ”
) - (1) Here, Ho: Strength of magnetic field on the surface of the plating film, δ = [2/(ωμσ)]”, Penetration depth of the magnetic field, ω = 2πf: Angular frequency of alternating current, μ: Plating film magnetic permeability, σ: electrical conductivity of the plating film, f: frequency of alternating current. While the film thickness is thin, measurement accuracy can be improved by increasing the frequency because the change in impedance value due to the change in film thickness is larger than when the frequency is low due to the skin effect, but Equation (1) As is clearer, the higher the frequency, the greater the attenuation of the magnetic field within a conductor. Therefore,
When a high-frequency current with a relatively high frequency is used, as film formation progresses and the film thickness exceeds a certain level, a saturation phenomenon occurs in which no difference appears in the impedance value even if there is a difference in film thickness.

一方、周波数が比較的低い高周波電流を用いた場合は、
めっき皮膜の膜厚がさほど厚くない電磁誘導法を用い得
る程度のものであれば、測定において飽和状態は存在せ
ず、この点は好都合であるが、膜厚の増加は僅かなイン
ピーダンス値の増加としてしか現れない。このため、成
膜初期の膜厚測定において用いることは、測定精度を低
下させることになる。
On the other hand, when using a high-frequency current with a relatively low frequency,
If the thickness of the plating film is not so thick that the electromagnetic induction method can be used, there will be no saturation state in the measurement, which is advantageous, but an increase in the film thickness will result in a slight increase in impedance value. It only appears as. For this reason, using it in film thickness measurement at the initial stage of film formation will reduce measurement accuracy.

従って、めっき皮膜の膜厚が薄いめっき初期にあっては
、周波数が比較的高い高周波電流によって成膜速度或い
は膜厚を求めるようにすれば測定精度を向上させること
ができ、また、膜厚が厚くなるめっき中期〜後期にあっ
ては、周波数が比較的低い高周波電流によって膜厚を求
めるようにすればコイルのインピーダンス値が飽和する
のを回避することができる。以上が、請求項1記載の発
明の原理である。
Therefore, in the early stages of plating when the plating film is thin, measurement accuracy can be improved by determining the film formation rate or film thickness using a high-frequency current with a relatively high frequency. In the middle to late stages of plating, when the plating becomes thick, saturation of the impedance value of the coil can be avoided by determining the film thickness using a high-frequency current with a relatively low frequency. The above is the principle of the invention according to claim 1.

ところで、(1)式によれば、磁界の強さHは式中の諸
因子が等しければ、常に等しく減衰する。従って、コイ
ルのインピーダンス値がめつき途中で飽和する周波数を
選定し、透磁率μ及び導電率σがめつき皮膜と等しい試
料について前記コイルのインピーダンスの標準飽和値E
Stを予め求めておけば、 Tc=T (E、、/E) ・・・・−・(2)(但し
、Tcは膜厚の補正値) に基づき、例えばめっき途中における測定条件の変動に
伴う膜厚の測定値Tを補正することができる。上式によ
り測定値Tを補正し得る理由は、次の通りである。
By the way, according to equation (1), the magnetic field strength H always attenuates equally if the factors in the equation are equal. Therefore, the frequency at which the impedance value of the coil is saturated during plating is selected, and the standard saturation value E of the impedance of the coil is selected for the sample whose magnetic permeability μ and conductivity σ are equal to those of the plated film.
If St is determined in advance, Tc = T (E, , /E) ... - (2) (where Tc is the correction value for the film thickness), for example, due to changes in measurement conditions during plating. The accompanying measurement value T of the film thickness can be corrected. The reason why the measured value T can be corrected using the above equation is as follows.

すなわち、(1)式より明らかなように、同じ周波数r
の高周波電流で電磁的特性すなわち透磁率μ及びめっき
皮膜の導電率σが標準試料と同じであるめっき皮膜につ
いて得られるコイルのインピーダンスの飽和値Eは先に
求めておいた同コイルのインピーダンスの標準飽和値E
Stと両測定条件が同じであれば、本来同一の値になる
筈のものである。なぜなら、インピーダンスの標準飽和
値は第2図にみるように飽和後の測定対象である膜厚の
厚薄によっては左右されないからである。しかし、飽和
出力値Eは標準飽和出力値E!tに通常は一致しない。
That is, as is clear from equation (1), the same frequency r
The saturation value E of the impedance of the coil obtained for a plating film whose electromagnetic properties, that is, magnetic permeability μ and conductivity σ of the plating film are the same as the standard sample at a high frequency current of , is the impedance standard of the same coil obtained previously. Saturation value E
If St and both measurement conditions are the same, the values should originally be the same. This is because, as shown in FIG. 2, the standard saturation value of impedance is not affected by the thickness of the film to be measured after saturation. However, the saturated output value E is the standard saturated output value E! It usually does not match t.

これはコイルとめっき皮膜との離隔距離(リフトオフ)
、めっき皮膜の温度等の測定条件が異なるためである。
This is the separation distance (lift-off) between the coil and the plating film.
This is because the measurement conditions such as the temperature of the plating film are different.

測定の標準とする標準飽和値Estを測定したときの測
定条件(標準条件)と実測における測定条件が異なると
、標準条件にて予め求めておいたインピーダンス値と膜
厚との相関より求められる膜厚に誤差が入ることになる
If the measurement conditions (standard conditions) when measuring the standard saturation value Est, which is used as the measurement standard, differ from the measurement conditions in the actual measurement, the film thickness determined from the correlation between the impedance value and the film thickness determined in advance under the standard conditions may differ. There will be an error in the thickness.

ところが、本発明者の知見によれば真の膜厚と誤差の入
った膜厚との比が標準飽和値Estと飽和値Eとの比に
等しいからその比にコイルのインピ−ダンス値で求めた
膜厚を乗することで補正が可能となるのである0以上が
、請求項2記載の発明の原理である。
However, according to the inventor's knowledge, since the ratio of the true film thickness to the film thickness with an error is equal to the ratio of the standard saturation value Est to the saturation value E, the impedance value of the coil can be calculated to that ratio. The principle of the invention described in claim 2 is that the correction can be made by multiplying the film thickness by the film thickness.

〔実施例〕〔Example〕

以下、本発明の実施例について図面を参照して説明する
。第1図は本発明を実施するための装置の模式図であり
、図において、4はめっき槽であり、該めっき槽4には
、めっき皮膜を施すべき基板2を支持するために支持台
7がその支持面を水平にして配されている。支持台7の
内部にはそのコイル軸を基板2に対して垂直にしてコイ
ル1が収納され、コイル1はインピーダンス測定器5に
接続されている。インピーダンス測定器5は少なくとも
2種類の周波数を発する発振源を備えている。基板2の
めっき面はめっき浴6に浸漬されており、図示しないめ
っき電極等からなる電気めっき手段によってめっき皮膜
3が成膜されるようになっている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram of an apparatus for carrying out the present invention. In the figure, 4 is a plating tank, and the plating tank 4 has a support stand 7 for supporting a substrate 2 to be coated with a plating film. is placed with its supporting surface horizontal. A coil 1 is housed inside the support stand 7 with its coil axis perpendicular to the substrate 2, and the coil 1 is connected to an impedance measuring device 5. The impedance measuring device 5 includes an oscillation source that emits at least two types of frequencies. The plating surface of the substrate 2 is immersed in a plating bath 6, and a plating film 3 is formed by electroplating means including a plating electrode (not shown).

斯かる装置において、めっき厚が薄いめっき初期にあっ
ては、周波数8MHzの高周波電流をコイル1に通電す
る。そうすると、めっき厚が僅かに変化しても、インピ
ーダンス測定器5は比較的大きなインピーダンスの増加
を示す。次いで、めっき厚が厚くなった後は、周波数4
MHzの高周波電流をコイル1に通電する。そうすると
、インピーダンス測定器5が表示するインピーダンスに
飽和状態が現れない。
In such an apparatus, a high frequency current with a frequency of 8 MHz is applied to the coil 1 during the initial stage of plating when the plating thickness is thin. Then, even if the plating thickness changes slightly, the impedance measuring device 5 will show a relatively large increase in impedance. Next, after the plating thickness becomes thicker, the frequency is increased to 4.
A high frequency current of MHz is applied to the coil 1. In this case, the impedance displayed by the impedance measuring device 5 does not show a saturated state.

以上より、精度良く膜厚を測定することができる。As described above, the film thickness can be measured with high accuracy.

また、4MHzの高周波電流に切り換えた後、これと交
互的に周波数8MHzの高周波電流を通電する。そうす
ると、8MHzの通電時にはインピーダンス測定器5が
表示するインピーダンスがめつき途中で変化しな(なる
。そこで、この変化しなくなった時のインピーダンスの
飽和値Eを読み、標準試料により予め求めておいた標準
飽和値Estと前記飽和値Eとの比を求め、これに周波
数4MHzの高周波電流で求められる膜厚Tを乗じて、
測定条件の変動に伴う膜厚測定における誤差を補正して
膜厚Tcを得る。
Further, after switching to a high frequency current of 4 MHz, a high frequency current of a frequency of 8 MHz is applied alternately therewith. Then, when 8MHz current is applied, the impedance displayed by the impedance measuring device 5 does not change during plating.Then, read the saturation value E of the impedance when this change stops, and use the standard value determined in advance using the standard sample. Find the ratio between the saturation value Est and the saturation value E, and multiply this by the film thickness T determined by a high-frequency current with a frequency of 4 MHz.
The film thickness Tc is obtained by correcting errors in film thickness measurement due to variations in measurement conditions.

なお、補正後の膜厚をそれまでに要した時間で除して成
膜速度を求めると、めっき終了迄の所要時間を算出する
ことができる。本発明方法による測定で成膜速度を求め
、これによってめっき終了時間を予測した場合、めっき
終了後の膜厚の誤差は±0.1 μm程度であった。
Note that the time required to complete plating can be calculated by dividing the corrected film thickness by the time required up to that point to determine the film formation rate. When the film formation rate was measured by the method of the present invention and the plating completion time was predicted based on this, the error in the film thickness after the plating was completed was about ±0.1 μm.

なお、以上説明した実施例ではコイルに周波数の異なる
2種類の交流を各別に通電するようにしているが、本発
明は斯かる通電方法に限られず、周波数の異なる2種類
の交流を混合通電する方法であっても構わない。
In the embodiment described above, two types of alternating current with different frequencies are applied to the coils separately, but the present invention is not limited to such an energization method, and the coils are energized with a mixture of two types of alternating current with different frequencies. It doesn't matter if it's a method.

〔発明の効果〕〔Effect of the invention〕

請求項1記載の発明にあっては、周波数の異なる高周波
電流、すなわち、めっき厚が薄い間は周波数が比較的高
い高周波電流を通電し、僅かの膜厚変化にもインピーダ
ンス値が大きく変化するようにし、めっき厚が厚くなっ
た後は周波数が低い高周波電流を通電し、インピーダン
ス値が飽和状態になることを回避しているため、めっき
厚を精度良く求めることができ、また、請求項2記載の
発明にあっては、めっき途中においてインピーダンス値
が飽和する高周波電流を通電して膜厚を補正するように
したので、最終的に所望の膜厚のめっき皮膜を精度良く
得ることができる。
In the invention according to claim 1, a high frequency current having a different frequency, that is, a high frequency current having a relatively high frequency while the plating thickness is thin, is passed, so that the impedance value changes greatly even with a slight change in the film thickness. Then, after the plating thickness becomes thick, a high-frequency current with a low frequency is applied to avoid the impedance value from reaching a saturated state, so that the plating thickness can be determined with high accuracy. In the invention, since the film thickness is corrected by passing a high frequency current that saturates the impedance value during plating, it is possible to finally obtain a plating film having a desired thickness with high precision.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明を実施するためのめっき装置、第2図は
膜厚とインピーダンスとの相関を示すグラフである。 1・・・コイル、2・・・基板、3・・・めっき皮膜、
4・・・めっき槽、5・・・インピーダンス測定器、6
・・・めっき浴、7・・・支持金 持 許 出願人 住友金属工業株式会社代理人 弁理士
 河  野  登  大箱 I 口 膜  A  II’“rマ1ン 籏 2 Y
FIG. 1 is a plating apparatus for carrying out the present invention, and FIG. 2 is a graph showing the correlation between film thickness and impedance. 1... Coil, 2... Substrate, 3... Plating film,
4... Plating tank, 5... Impedance measuring device, 6
...Plating bath, 7... Supporter Hsu Applicant: Sumitomo Metal Industries Co., Ltd. Agent Patent Attorney Noboru Kono Large box I Oral membrane A II'"rman 2 Y

Claims (1)

【特許請求の範囲】 1、めっき皮膜に渦電流を誘起させ、これに臨ませたコ
イルのインピーダンス値で膜厚を測定する方法において
、 めっき厚が薄い間は、比較的高い周波数の高周波電流で
、また、めっき厚が厚くなった後は、比較的低い周波数
の高周波電流で渦電流を誘起せしめることを特徴とする
膜厚測定方法。 2、めっき皮膜に渦電流を誘起させ、これに臨ませたコ
イルのインピーダンス値で膜厚を測定する方法において
、 めっき途中においてコイルのインピーダンス値が飽和状
態を示す周波数の高周波電流でめっき皮膜に渦電流を誘
起させて求めたインピーダンスの飽和値Eと、同じ周波
数の高周波電流でめっき皮膜と電磁的特性が等しい標準
試料について予め求めておいた前記コイルのインピーダ
ンスの飽和値E_s_tとから、 式:T_c=T(E_s_t/E) (但し、T_cは膜厚の補正値) に基づき前記コイルのインピーダンス値によって求めた
膜厚Tを補正することを特徴とする膜厚測定方法。
[Claims] 1. In the method of inducing eddy current in the plating film and measuring the film thickness by the impedance value of a coil facing the eddy current, while the plating thickness is thin, a high-frequency current with a relatively high frequency is used. , and a film thickness measuring method characterized in that, after the plating thickness has increased, eddy currents are induced using a high-frequency current with a relatively low frequency. 2. In the method of inducing eddy currents in the plating film and measuring the film thickness using the impedance value of a coil placed in front of it, eddy currents are induced in the plating film with a high-frequency current at a frequency that indicates the impedance value of the coil is saturated during plating. From the saturation value E of the impedance obtained by inducing a current and the saturation value E_s_t of the impedance of the coil previously obtained using a high-frequency current of the same frequency and having the same electromagnetic characteristics as the plating film, the formula: T_c =T(E_s_t/E) (where T_c is a film thickness correction value) A film thickness measuring method characterized in that the film thickness T determined by the impedance value of the coil is corrected based on the following formula.
JP6681088A 1988-03-18 1988-03-18 Film thickness measuring method Pending JPH01239403A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6681088A JPH01239403A (en) 1988-03-18 1988-03-18 Film thickness measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6681088A JPH01239403A (en) 1988-03-18 1988-03-18 Film thickness measuring method

Publications (1)

Publication Number Publication Date
JPH01239403A true JPH01239403A (en) 1989-09-25

Family

ID=13326582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6681088A Pending JPH01239403A (en) 1988-03-18 1988-03-18 Film thickness measuring method

Country Status (1)

Country Link
JP (1) JPH01239403A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007240458A (en) * 2006-03-10 2007-09-20 Napuson Kk Film thickness measuring instrument
JP2007243221A (en) * 2007-05-17 2007-09-20 Ebara Corp Device and method for substrate polishing
JP2008014699A (en) * 2006-07-04 2008-01-24 Tokyo Institute Of Technology Film thickness measuring method and film thickness measuring device in electrolysis processing
JP2009500605A (en) * 2005-06-29 2009-01-08 ラム リサーチ コーポレーション Method and apparatus for optimizing the electrical response of a conductive layer
JP2017003372A (en) * 2015-06-09 2017-01-05 Jfeスチール株式会社 Method for measuring plating thickness of plating material, method for measuring amount of corrosion of plating material, and corrosion sensor of plating material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009500605A (en) * 2005-06-29 2009-01-08 ラム リサーチ コーポレーション Method and apparatus for optimizing the electrical response of a conductive layer
JP2007240458A (en) * 2006-03-10 2007-09-20 Napuson Kk Film thickness measuring instrument
JP2008014699A (en) * 2006-07-04 2008-01-24 Tokyo Institute Of Technology Film thickness measuring method and film thickness measuring device in electrolysis processing
JP2007243221A (en) * 2007-05-17 2007-09-20 Ebara Corp Device and method for substrate polishing
JP2017003372A (en) * 2015-06-09 2017-01-05 Jfeスチール株式会社 Method for measuring plating thickness of plating material, method for measuring amount of corrosion of plating material, and corrosion sensor of plating material

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