JPH01238087A - Metallic vapor laser device - Google Patents
Metallic vapor laser deviceInfo
- Publication number
- JPH01238087A JPH01238087A JP6356488A JP6356488A JPH01238087A JP H01238087 A JPH01238087 A JP H01238087A JP 6356488 A JP6356488 A JP 6356488A JP 6356488 A JP6356488 A JP 6356488A JP H01238087 A JPH01238087 A JP H01238087A
- Authority
- JP
- Japan
- Prior art keywords
- energy
- level
- metal
- oscillation
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010355 oscillation Effects 0.000 claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 11
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 10
- 239000011591 potassium Substances 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 6
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011651 chromium Substances 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 5
- 239000010941 cobalt Substances 0.000 claims abstract description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 239000010936 titanium Substances 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims abstract description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- -1 cadnium Chemical compound 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000011575 calcium Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 150000003378 silver Chemical group 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/031—Metal vapour lasers, e.g. metal vapour generation
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、金属蒸気を放電によシ励起し、共振器を用い
てレーザー発振を行なう金属蒸気レーザー装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a metal vapor laser device that excites metal vapor by electric discharge and performs laser oscillation using a resonator.
（従来の技術）
従来、金属蒸気レーザーは、放電管を放電のジュール熱
や外部に巻いたヒーターで暖め、放電管内に設置した金
属を蒸発させ、その金属蒸気を放電によって励起するこ
とによシレーザー発振を得ている。そのため、放電管内
の温度はレーザー発振に用いる金属の融点よシ高い必要
がある。また、レーザー発振を効率良く行なうためには
、金属原子をレーザー発振の上準位に効率良く励起した
シ、或は下準位の金属原子を効率良く取υ去ることが必
要である。このような励起・脱励起を効率良く行なう手
段の一つとして、レーザー媒質である金属原子の上準位
や下準位のエネルギーレベルに近いエネルギー準位をも
つ物質を、放電管内に混入する方法がある。たとえば、
銅蒸気レーザーにセシウムや銀を少量混入することによ
りレーザー出力が増加したという実験報告がある。その
−例として、第２図に、従来の技術の構成概略図を示す
。(Conventional technology) Conventionally, metal vapor lasers heat the discharge tube using the Joule heat of the discharge or a heater wound around the outside, evaporate the metal placed inside the discharge tube, and excite the metal vapor by the discharge. Obtaining laser oscillation. Therefore, the temperature inside the discharge tube must be higher than the melting point of the metal used for laser oscillation. Furthermore, in order to efficiently perform laser oscillation, it is necessary to efficiently excite metal atoms to the upper level of laser oscillation, or to efficiently remove metal atoms at the lower level. One way to efficiently perform such excitation and deexcitation is to mix a substance with an energy level close to the upper or lower energy level of the metal atoms, which are the laser medium, into the discharge tube. There is. for example,
There is an experimental report that the laser output was increased by mixing a small amount of cesium or silver into a copper vapor laser. As an example, FIG. 2 shows a schematic diagram of the configuration of a conventional technique.
放電管１に金属塩化物が入れられている。たとえば、塩
化銅１．７と塩化銀１８を放電管内にいれる。A discharge tube 1 contains a metal chloride. For example, 1.7 parts of copper chloride and 18 parts of silver chloride are placed in a discharge tube.
こうすることによシ、銀原子の励起準位と銅の発振上準
位が非常に接近しているため、銀原子の励起漁位から銅
の発振上準位へのエネルギー移乗が起り効率よくポンピ
ングが行われる。したがって、銅のみを放電管に入れた
場合の発振効率比較し、銀原子を添加した場合の発振効
率が高くなる傾向にある。しかし、この方法では、大幅
な大出力化や発振効率は望めず、また装置の小型化に結
び付かない。By doing this, the excitation level of the silver atom and the upper oscillation level of copper are very close to each other, so that energy transfer from the excitation level of the silver atom to the upper oscillation level of copper occurs efficiently. Pumping takes place. Therefore, compared to the oscillation efficiency when only copper is added to the discharge tube, the oscillation efficiency tends to be higher when silver atoms are added. However, with this method, it is not possible to expect a significant increase in output or oscillation efficiency, and it does not lead to miniaturization of the device.
（発明が解決しようとする問題点）
本発明は、前述したような欠点を改良したもので、大出
力で、発振効率が高く、よシ小形の金属蒸気レーザー装
置を提供することを目的としている。(Problems to be Solved by the Invention) The present invention improves the above-mentioned drawbacks, and aims to provide a metal vapor laser device with high output, high oscillation efficiency, and a small size. .
（課題を解決するための手段）
本発明は、放電管に供給するバッファガス中に発振効率
を高めるのに銅の発振上位準位と熱エネルギーｏ、２ｓ
ｅｖ８度以内に離れている励起準位を持つ原子（ビスマ
ス、カドニュウム、亜鉛、チタン、クロム、コバルト、
銀、インジニウム、モリブデン、アルミニュウム、ハフ
ニーラム）を少なくとも一種類以上含む物質、又は銅の
発振下準位と熱エネルギー０．２５８Ｖ程度以内に離れ
ている励起準位を持つ原子（セシュム、パリュウム、カ
リュウム）を少なくとも一種類以上含む物質をあらかじ
め混入した後、そのバッファガスを放電管にの励起エネ
ルギーが、銅の発振上準位へ効率良く移乗し、発振出力
および効率が向上する。また、銅の発振下準位と接近し
ている励起準位を持つ原子の励起準位へ、銅の発振下準
位のエネルギーを効率良く移乗し、発振出力および効率
が向上する。(Means for Solving the Problems) The present invention uses the upper oscillation level of copper and the thermal energy o, 2s to increase the oscillation efficiency in the buffer gas supplied to the discharge tube.
Atoms with excited levels separated by ev8 degrees (bismuth, cadmium, zinc, titanium, chromium, cobalt,
Substances containing at least one type of silver, indinium, molybdenum, aluminum, hafnylam), or atoms with an excited level that is within a thermal energy of about 0.258 V from the lower oscillation level of copper (cesium, pallium, potassium) After pre-mixing a substance containing at least one type of buffer gas, the excitation energy of the buffer gas into the discharge tube is efficiently transferred to the upper oscillation level of copper, improving oscillation output and efficiency. Furthermore, the energy of the lower oscillation level of copper is efficiently transferred to the excited level of an atom having an excited level that is close to the lower oscillation level of copper, thereby improving the oscillation output and efficiency.
これらの原子を二種類以上混入すればさらに発振出力お
よび効率の向上が期待できる。If two or more of these atoms are mixed, further improvements in oscillation output and efficiency can be expected.
（実施例）
第１図に、本発明の一実施例を示す。放電管１内に対向
して置かれた２つの円筒型電極２にパルス電源３を用い
て高圧パルスをかけ放電を行なう。(Example) FIG. 1 shows an example of the present invention. A pulse power source 3 applies high-voltage pulses to two cylindrical electrodes 2 placed facing each other in a discharge tube 1 to generate a discharge.
この放電のジュール熱により放電管内の温度が上昇し金
属銅４が蒸発する。また、ヒーター１０゜１１等でオー
ブン８，９の温度を制御し、オーブン８，９中に金属ア
ルミニュウム１３、カリュウム１４を、それぞれ入れ蒸
発させ、適当な蒸気圧に保つ。このオーブン中にネオン
等のバッファガスを通して、ガス中にアルミニウム蒸気
とカリウム蒸気を混入させてから放電管に供給する。こ
のとき、オーブン９，８の温度とガス供給量を制御する
ことによシ、放電管内のアルミニニウム蒸気圧とカリウ
ム蒸気圧が制御できる。このようにして、銅蒸気とそれ
に対して適当な蒸気圧のアルミニニウム蒸気とカリウム
蒸気を封入した放電管内でパルス放電を行なうと、銅原
子が励起され上準位にポンピングされるが、それと同時
にアルミニュウムの銅原子上準位に近い励起準位にも電
子衝突により励起される。この結果アルミニュウムの銅
原子上準位に近い励起準位から銅原子上準位へエネルギ
ー移乗が起き、よシ効率良くボンピングされる。この様
に銅原子が励起されレーザー発振を行なって下準位に溜
る。一方、銅原子の単位ノエネルギーレベルとカリニウ
ム原子の励起エネルギーレベルが近いため銅原子からカ
リニウム原子へのエネルギー移乗が起き、銅原子の下準
位が速く緩和され、レーザーの発振出力及び効率が向上
する。この方法では、アルミニュウムやカリュウムの蒸
気圧を制御できるため、レーザーの発振効率が最大にな
るようにできる。The temperature inside the discharge tube rises due to the Joule heat of this discharge, and the metal copper 4 evaporates. Further, the temperature of the ovens 8 and 9 is controlled by heaters 10 and 11, and metal aluminum 13 and potassium 14 are placed in the ovens 8 and 9, respectively, and evaporated and maintained at appropriate vapor pressures. A buffer gas such as neon is passed through this oven to mix aluminum vapor and potassium vapor into the gas, which is then supplied to the discharge tube. At this time, by controlling the temperature and gas supply amount of the ovens 9 and 8, the aluminum vapor pressure and potassium vapor pressure within the discharge tube can be controlled. In this way, when a pulse discharge is performed in a discharge tube filled with copper vapor and aluminum vapor and potassium vapor at appropriate vapor pressures, the copper atoms are excited and pumped to the upper level, but at the same time Excited levels close to the upper level of copper atoms in aluminum are also excited by electron collisions. As a result, energy transfer occurs from the excited level close to the upper level of the copper atom of aluminum to the upper level of the copper atom, and the pumping is performed with higher efficiency. In this way, the copper atoms are excited, perform laser oscillation, and accumulate in the lower level. On the other hand, since the unit energy level of the copper atom and the excitation energy level of the potassium atom are close, energy transfer from the copper atom to the potassium atom occurs, the lower level of the copper atom is quickly relaxed, and the oscillation output and efficiency of the laser are improved. do. This method allows the vapor pressure of aluminum and potassium to be controlled, thereby maximizing laser oscillation efficiency.
本発明の他の実施例として、オーブン中に入れる物質と
してビスマス、カドニュウム、亜鉛、チタン、クロム、
コバルト、銀、インジニウム、ハフニスム、セシュウム
、バリュウムの金属でも、また塩化物など混合物質でも
その効果はかわらない。また、本発明は、銅蒸気レーザ
ー以外の他の金属蒸気レーザーにも適用できる。即ち、
レーザ媒質である金属原子の発振上準位のエネルギーよ
、９０．２５ｅＶ高いエネルギーから、金属原子の発振
上準位のエネルギーより０．２５ｅＶ低いエネルギー範
囲のエネルギーの励起準位を持つ元素をすぐなくとも一
種類以上含有する物質あるいはレーザ媒質である金属原
子の発振上準位のエネルギーよシ０．２５ｅＶ高いエネ
ルギー範囲から、金属原子の発振上準位のエネルギーよ
、９０．２５ｅＶ低いエネルギーの励起準位を持つ元素
をすくなくとも一種類以上含有する物質を放電管に供給
しても、本発明と同様の効果が期待出来る。Other embodiments of the invention include bismuth, cadmium, zinc, titanium, chromium,
The effect remains the same for metals such as cobalt, silver, indinium, hafnium, cesium, and barium, as well as mixed substances such as chloride. Further, the present invention can be applied to metal vapor lasers other than copper vapor lasers. That is,
The energy of the upper oscillation level of the metal atom, which is the laser medium, is 90.25 eV higher than the energy of the upper oscillation level of the metal atom. From an energy range that is 0.25 eV higher than the energy of the upper oscillation level of metal atoms, which is a substance or laser medium containing one or more types of materials, to an excitation level that is 90.25 eV lower than the energy of the upper oscillation level of metal atoms. Effects similar to those of the present invention can be expected even if a substance containing at least one type of element having a certain position is supplied to the discharge tube.
以上、本発明の効果を逸脱しない範囲で、本発明はいろ
いろなレーザーに対して、適用可能である。As described above, the present invention can be applied to various lasers without departing from the effects of the present invention.
本発明を用いることによって、大出力で、発振効率が高
く、よシ小形化可能な金属蒸気レーザー装置を提供する
ことができる。By using the present invention, it is possible to provide a metal vapor laser device that has high output, high oscillation efficiency, and can be miniaturized.
第１図、綱奪；戸回は、本発明の一実施例による金属蒸
気レーザー装置の概略図、第２図は、従来の金属蒸気レ
ーザー装置の概略図である。
１・・・放電管、２・・・電極、３・・・パルス電源、
４・・・金属銅、６・・・共振器ミラー、８，９・・・
オーブン、１３・・・金属アルミニウム、１４・・・金
属カリュム、１０．１１・・・ヒーター、１５．１６・
・・ヒーター電源、１７・・・塩化銅、１８・・・塩化
銀。
第１図FIG. 1 is a schematic diagram of a metal vapor laser device according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of a conventional metal vapor laser device. 1...Discharge tube, 2...Electrode, 3...Pulse power supply,
4...Metal copper, 6...Resonator mirror, 8, 9...
Oven, 13...Metal aluminum, 14...Metal potassium, 10.11...Heater, 15.16.
...Heater power supply, 17...Copper chloride, 18...Silver chloride. Figure 1
Claims (6)
ファガスを供給して放電させる金属蒸気レーザ装置にお
いて、前記金属原子の発振、上準位のエネルギーより０
．２５ｅＶ高いエネルギーから、前記金属原子の発振上
準位のエネルギーより０．２５ｅＶ低いエネルギー範囲
のエネルギーの励起準位を持つ元素をすくなくとも一種
類以上含有する物質を放電管に供給したことを特徴とす
る金属蒸気レーザ装置。(1) In a metal vapor laser device that uses metal atoms as a laser medium and discharges by supplying a discharge buffer gas, the oscillation of the metal atoms is 0.
．． The discharge tube is characterized by being supplied with a substance containing at least one type of element having an excited level of energy in the energy range from 25 eV higher to 0.25 eV lower than the energy of the upper oscillation level of the metal atom. Metal vapor laser equipment.
ファガスを供給して放電させる金属蒸気レーザ装置にお
いて、前記金属原子の発振下準位のエネルギーより０．
２５ｅＶ高いエネルギーから、前記金属原子の発振下準
位のエネルギーより０．２５ｅＶ低いエネルギー範囲の
エネルギーの励起準位を持つ元素をすくなくとも一種類
以上含有する物質を放電管に供給したことを特徴とする
金属蒸気レーザ装置。(2) In a metal vapor laser device that uses metal atoms as a laser medium and discharges by supplying a discharge buffer gas, the energy of the lower oscillation level of the metal atoms is 0.
The discharge tube is characterized by being supplied with a substance containing at least one kind of element having an excited level of energy in the energy range from 25 eV higher to 0.25 eV lower than the energy of the lower oscillation level of the metal atom. Metal vapor laser equipment.
ファガスを供給して放電させる金属蒸気レーザ装置にお
いて、前記金属原子の発振上準位のエネルギーより０．
２５ｅＶ高いエネルギーから、前記金属原子の発振上準
位のエネルギーより０．２５ｅＶ低いエネルギー範囲の
エネルギーの励起準位を持つ元素および前記金属原子の
発振下準位のエネルギーより０．２５ｅＶ高いエネルギ
ーから、前記金属原子の発振下準位のエネルギーより０
．２５ｅＶ低いエネルギー範囲のエネルギーの励起準位
を持つ元素のそれぞれを少なくとも一種類以上含有する
物質を放電管に供給したことを特徴とする金属蒸気レー
ザ装置。(3) In a metal vapor laser device that uses metal atoms as a laser medium and discharges by supplying a discharge buffer gas, the energy of the upper oscillation level of the metal atoms is 0.
An element having an excited level of energy in an energy range from 25 eV higher to 0.25 eV lower than the energy of the upper oscillation level of the metal atom, and from an energy 0.25 eV higher than the energy of the lower oscillation level of the metal atom, 0 from the energy of the lower oscillation level of the metal atom
．． 1. A metal vapor laser device, characterized in that a discharge tube is supplied with a substance containing at least one kind of each of elements having an excited level of energy in an energy range as low as 25 eV.
、カドニュウム、亜鉛、チタン、クロム、コバルト、銀
、インジニウム、モリブデン、アルミニュウム、ハフニ
ュウムの内少なくとも、一種類以上としたことを特徴と
する請求項１記載の金属蒸気レーザ装置。(4) A claim characterized in that the metal atom is copper, and the element is at least one of bismuth, cadnium, zinc, titanium, chromium, cobalt, silver, indinium, molybdenum, aluminum, and hafnium. Item 1. The metal vapor laser device according to item 1.
ム、バリュウム、カリュウムの内少なくとも、一種類以
上としたことを特徴とする請求項２記載の金属蒸気レー
ザ装置。(5) The metal vapor laser device according to claim 2, wherein the metal atom is copper, and the element is at least one of cesium, barium, and potassium.
、カドニュウム、亜鉛、チタン、クロム、コバルト、銀
、インジニウム、モリブデン、アルミニュウム、ハフニ
ュウムの内、少なくとも一種類以上とセシュウム、バリ
ュウム、カリュウムの内、少なくとも一種類以上とした
ことを特徴とする請求項３記載の金属蒸気レーザ装置。(6) The metal atom is copper, and the element is at least one of bismuth, cadmium, zinc, titanium, chromium, cobalt, silver, indium, molybdenum, aluminum, and hafnium, and at least one of cesium, barium, and potassium. 4. The metal vapor laser device according to claim 3, wherein at least one type of metal vapor laser is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6356488A JPH01238087A (en) | 1988-03-18 | 1988-03-18 | Metallic vapor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6356488A JPH01238087A (en) | 1988-03-18 | 1988-03-18 | Metallic vapor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01238087A true JPH01238087A (en) | 1989-09-22 |
Family
ID=13232855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6356488A Pending JPH01238087A (en) | 1988-03-18 | 1988-03-18 | Metallic vapor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01238087A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758384A (en) * | 1993-08-18 | 1995-03-03 | Chuo Seisakusho:Kk | Metal vapor laser |
| WO1996002076A1 (en) * | 1994-07-12 | 1996-01-25 | Kazumi Ohuchi | Copper vapor laser and its driving method |
-
1988
- 1988-03-18 JP JP6356488A patent/JPH01238087A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758384A (en) * | 1993-08-18 | 1995-03-03 | Chuo Seisakusho:Kk | Metal vapor laser |
| WO1996002076A1 (en) * | 1994-07-12 | 1996-01-25 | Kazumi Ohuchi | Copper vapor laser and its driving method |
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