JPH01235947A - Positive type photoresist thin film - Google Patents
Positive type photoresist thin filmInfo
- Publication number
- JPH01235947A JPH01235947A JP6236788A JP6236788A JPH01235947A JP H01235947 A JPH01235947 A JP H01235947A JP 6236788 A JP6236788 A JP 6236788A JP 6236788 A JP6236788 A JP 6236788A JP H01235947 A JPH01235947 A JP H01235947A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- photoresist
- acid chloride
- positive type
- soluble resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 title claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000003504 photosensitizing agent Substances 0.000 claims description 7
- -1 quinonediazide compound Chemical class 0.000 claims description 3
- 229920005989 resin Polymers 0.000 abstract description 21
- 239000011347 resin Substances 0.000 abstract description 21
- 239000010408 film Substances 0.000 abstract description 8
- 229920003986 novolac Polymers 0.000 abstract description 8
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 abstract description 7
- 239000002904 solvent Substances 0.000 abstract description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 abstract description 5
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 abstract description 5
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 abstract description 4
- 125000000524 functional group Chemical group 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- LEEBETSNAGEFCY-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 Chemical group [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 LEEBETSNAGEFCY-UHFFFAOYSA-N 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229920000147 Styrene maleic anhydride Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 2
- 229960001553 phloroglucinol Drugs 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- ZXDDPOHVAMWLBH-UHFFFAOYSA-N 2,4-Dihydroxybenzophenone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 ZXDDPOHVAMWLBH-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- ZRYCRPNCXLQHPN-UHFFFAOYSA-N 3-hydroxy-2-methylbenzaldehyde Chemical compound CC1=C(O)C=CC=C1C=O ZRYCRPNCXLQHPN-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N anhydrous gallic acid Natural products OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000000687 hydroquinonyl group Chemical group C1(O)=C(C=C(O)C=C1)* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Abstract
Description
【発明の詳細な説明】
本発明は、ポジ型フォトレジスト薄膜に関するものであ
る。さらに詳しくは、０．５μｍ以下、このましくは０
．４μｍ以下、さらにこのましくは、０．３μｍ以下の
厚みに形成されていることを特徴とするポジ型フォトレ
ジスト薄膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to positive photoresist thin films. More specifically, 0.5μm or less, preferably 0.
．． The present invention relates to a positive photoresist thin film characterized in that it is formed to a thickness of 4 μm or less, more preferably 0.3 μm or less.
従来、ナフトキノンジアジド基やベンゾキノンジアジド
基を有する化合物を含む感光性組成物は３００〜５００
ｍμの光照射により、キノンジアジド基が分解してカル
ボキシル基を生ずることにより、アルカリ不溶の状態か
らアルカリ可溶性になることを利用してポジ型フォトレ
ジストやポジ型ＰＳ版用として用いられている。ナフト
キノンジアジド基やベンゾキノンジアジド基を含む化合
物は、例えばナフトキノンジアジドスルホン酸クロリド
やベンゾキノンジアジドスルホン酸クロリドとヒドロキ
シ基を有する低分子化合物や高分子化合物を弱アルカリ
の存在下に縮合させることにより得られる。ここで低分
子化合物の例としてはハイドロキノン、レゾルシン、フ
ロログルシン、２．４−ジヒドロキシベンゾフェノン、
２．３゜４−トリヒドロキシベンゾフェノン、没食子酸
アルキルエステル等があげられ、高分子化合物の例とし
てはフェノールーホルムアルデヒドノポラソク樹脂、タ
レゾール−ホルムアルデヒドノボランク樹脂、ポリヒド
ロキシスチレン等があげられる。Conventionally, photosensitive compositions containing a compound having a naphthoquinone diazide group or a benzoquinone diazide group have a molecular weight of 300 to 500
When irradiated with light of mμ, the quinone diazide group decomposes to produce a carboxyl group, thereby changing from an alkali-insoluble state to an alkali-soluble state, which is used as a positive-working photoresist and a positive-working PS plate. A compound containing a naphthoquinonediazide group or a benzoquinonediazide group can be obtained, for example, by condensing naphthoquinonediazide sulfonic acid chloride or benzoquinonediazide sulfonic acid chloride with a low-molecular compound or high-molecular compound having a hydroxy group in the presence of a weak alkali. Examples of low molecular weight compounds include hydroquinone, resorcinol, phloroglucin, 2,4-dihydroxybenzophenone,
Examples of the polymer compound include 2.3°4-trihydroxybenzophenone and gallic acid alkyl ester, and examples of the polymer compound include phenol-formaldehyde noporasoc resin, talesol-formaldehyde novolank resin, and polyhydroxystyrene.
これらの感光剤を含む感光性組成物は、この他に通常、
樹脂成分を含んでいる。これは均一で丈夫な塗膜を与え
、フォトレジストやＰＳ版とじて実用に耐えるための必
須成分である。又、アルカリで現像できることも要件と
される。このような樹脂としてはノボラック樹脂が好適
であり、フェノールーホルムアルデヒドノボラソク樹脂
やフレ゛ ゾール〜ホルムアルデヒドノボラック樹脂が
広く実用に供されている。この他スチレンー無水マレイ
ン酸コポリマー、ポリヒドロキシスチレン、カルボキシ
ル基を有するアクリル樹脂が用いられる。In addition to this, photosensitive compositions containing these photosensitizers usually include:
Contains resin components. This is an essential component to provide a uniform and durable coating film and to withstand practical applications such as photoresists and PS plates. It is also required that it can be developed with alkali. Novolac resins are suitable as such resins, and phenol-formaldehyde novolac resins and flesol-formaldehyde novolac resins are widely used in practical use. In addition, styrene-maleic anhydride copolymers, polyhydroxystyrene, and acrylic resins having carboxyl groups are used.
以上のポジ型フォトレジストは、一般に光硬化型（ネガ
型）フォトレジストに比べ解像力が著しくすくれている
。この高解像力を生かしてプリント配線用銅張積層基板
、ＩＣやＬＳＩなどの集積回路製作を行うときの写真食
刻法のエツチング保護膜（レジスト１１％）として利用
されている。さて集積回路については高集積化による微
細化に伴い今やサブミクロン中のパターンが要求される
に到りている。The above positive type photoresists generally have significantly lower resolution than photocurable (negative type) photoresists. Taking advantage of this high resolution, it is used as an etching protective film (11% resist) for photolithography when manufacturing integrated circuits such as copper-clad laminate boards for printed wiring and ICs and LSIs. Now, with the miniaturization of integrated circuits due to higher integration, submicron patterns are now required.
しかしながら、サブミクロン以下のパターンを形成する
ために、波長の短い光が露光に使われ、ディープＵＶ光
ｉ線（３６５ｎｍ）のほかＸｅＣｌ （３０８ｒｒｍ）
、ＫｒＦ （２４８ｎｍ）、ＡｒＦ （１９３ｎｍ
）などのエキシマ−レーザー光が有望と考えら□れてい
る。このようになると、現在のヘンセン環を含むポジ型
フォトレジストでは、ベンゼン環の短波長域の吸収のた
めにく露光してもレジストの表面だけで吸収し中まで光
が入っていかず、三角形の断面になり、垂直に切り立っ
た良好なパターンは得られないという問題に直面してい
る。However, in order to form submicron patterns, light with short wavelengths is used for exposure, including deep UV i-line (365 nm) and XeCl (308 rrm).
, KrF (248nm), ArF (193nm)
) and other excimer laser beams are considered promising. In this case, with current positive photoresists containing Hensen rings, even when exposed to light, the light is absorbed only at the surface of the resist, and the light does not penetrate into the inside due to the absorption of the benzene ring in the short wavelength range. The problem is that it is not possible to obtain a good vertically cut pattern.
ベース樹脂の光吸収を小さくする方向で検討がなされて
いるが、これはベンゼン環を減少させる方向であり、耐
ドライエツチ性能の低下をまねくということになる。Studies have been made to reduce the light absorption of the base resin, but this would reduce the number of benzene rings, which would lead to a decrease in dry etch resistance.
本発明者らは、この点に鑑み、短波長紫外光用高解像度
ポジ型フォトレジストについて鋭意横側した結果、膜厚
が０．５μｍ以下、好ましくは０．４μｍ以下さらに好
ましくは０．３μｍ以下に製膜することにより、高解像
度の良好なパターンが得られることが明らかになった。In view of this, the inventors of the present invention have carefully evaluated high-resolution positive photoresists for use with short wavelength ultraviolet light, and have found that the film thickness is 0.5 μm or less, preferably 0.4 μm or less, and more preferably 0.3 μm or less. It has become clear that a good pattern with high resolution can be obtained by forming a film.
本発明のポジ型フォトレジスＩ・材料は、前述したよう
にキノンジアジド基を有し２００〜５００ｎｍの光照射
によりキノンジアジド基が分解してカルボキシル基を生
ずることにより、アルカリ不溶の状態からアルカリ可溶
性となる組成物をすべて含む。この組成物は一般にキノ
ンジアジド基を含む感光剤成分とアルカリ可溶性樹脂成
分および溶剤より成っている。As mentioned above, the positive photoresist I/material of the present invention has a quinonediazide group, and when irradiated with light of 200 to 500 nm, the quinonediazide group decomposes to produce a carboxyl group, thereby changing from an alkali-insoluble state to an alkali-soluble state. Contains all compositions. This composition generally comprises a photosensitizer component containing a quinonediazide group, an alkali-soluble resin component, and a solvent.
、まずキノンジアジド基を含む感光剤成分は、ナフトキ
ノンジアジドスルホン酸クロリドやベンゾキノンジアジ
ドスルホン酸クロリドと酸クロリドと縮合反応可能な官
能基を有する低分子化合物又は高分子化合物とを反応さ
せることによって得られる。ここで酸クロリドと縮合反
応可能な官能基としては水酸基、アミノ基等があげられ
るが、特に水酸基が好適である。水酸基を含む低分子化
合物としては、例えばハイドロキノン、レゾルシン、フ
ロログルシン、２．４−ジスドロキシベンゾフェノン、
２，３．４−）リヒドロキシベンゾフェノン、没食子酸
アルキルエステルがあげられ、水酸基を含む高分子化合
物としてはフェノールーホルムアルデヒドノボラソク樹
脂、タレゾール−ホルムアルデヒドノボランク樹脂、ポ
リヒドロキシスチレン等があげられる。First, a photosensitizer component containing a quinonediazide group is obtained by reacting naphthoquinonediazide sulfonic acid chloride or benzoquinonediazide sulfonic acid chloride with a low-molecular compound or a high-molecular compound having a functional group capable of a condensation reaction with the acid chloride. Examples of functional groups capable of condensation reaction with acid chloride include hydroxyl groups and amino groups, with hydroxyl groups being particularly preferred. Examples of low molecular weight compounds containing hydroxyl groups include hydroquinone, resorcinol, phloroglucin, 2,4-disdroxybenzophenone,
Examples of the polymer compounds containing hydroxyl groups include phenol-formaldehyde novolasoc resin, talesol-formaldehyde novolank resin, and polyhydroxystyrene.
次にアルカリ可溶性樹脂成分であるが、ノボラック樹脂
、スチレン−無水マレイン酸コポリマー、ポリヒドロキ
シスチレン、カルボキシル基を有するアクリル樹脂等が
あるが、ノボラック樹脂が好適である。Next, regarding the alkali-soluble resin component, there are novolak resin, styrene-maleic anhydride copolymer, polyhydroxystyrene, acrylic resin having a carboxyl group, etc., and novolak resin is preferred.
ノボラック樹脂の例としてはフェノールホルムアルデヒ
ド−ノボラック樹脂、タレゾール−ホルムアルデヒドノ
ボランク樹脂があげられる。この感光剤成分とアルカリ
可溶性樹脂成分の比は１：１〜１：６の範囲で用いるの
が好ましい。Examples of novolak resins include phenol formaldehyde-novolak resin and talesol-formaldehyde novolank resin. The ratio of the photosensitizer component to the alkali-soluble resin component is preferably in the range of 1:1 to 1:6.
これらの感光剤成分とアルカリ可溶性樹脂成分を溶剤に
とかしレジスト液を調製する。A resist solution is prepared by dissolving these photosensitizer components and alkali-soluble resin components in a solvent.
ここで用いる溶剤は、適当な乾燥速度で溶剤が蒸発した
後、均一で平滑な塗膜を与えるものが望ましい。The solvent used here is preferably one that provides a uniform and smooth coating after the solvent evaporates at an appropriate drying rate.
好ましい溶剤としてはエチルセロソルブアセテート、メ
チルセロソルブアセテート、エチルセロソルブ、メチル
セロソルブ、酢酸ブチル、メチルイソブチルケトン、キ
シレン等があげられる。Preferred solvents include ethyl cellosolve acetate, methyl cellosolve acetate, ethyl cellosolve, methyl cellosolve, butyl acetate, methyl isobutyl ketone, xylene, and the like.
以上説明した本発明のホトレジスト材料はその高解像度
であることを生かし、サブミクロンさらには０．７μｍ
さらには０，５μｍ程度のパターンを゛ 有する大規
模集積回路に用いることができる。その他シャドーマス
ク加工、ＣＣＤ用カラーフィルター加工、プリント配線
加工、ＰＳ平版をはじめとして各種用途に用いることが
できる。The photoresist material of the present invention explained above takes advantage of its high resolution and can be applied to submicron or even 0.7 μm
Furthermore, it can be used for large-scale integrated circuits having patterns of about 0.5 μm. It can also be used for various other purposes, including shadow mask processing, CCD color filter processing, printed wiring processing, and PS lithography.
以下に本発明を実施例により具体的に説明するが、もち
ろん本発明はこれらの実施例に限定されるものではない
。EXAMPLES The present invention will be specifically explained below with reference to Examples, but of course the present invention is not limited to these Examples.
実施例１
アルカリ可溶性クレゾールーホルムアルデヒドノボラソ
ク樹脂１４．５ ｇ、感光剤ナフトキノン−（１，２）
−ジアジド−（２）−５−スルホン酸クロリドと２．３
．４１リヒドロキシベンゾフエノンの縮合反応物６ｇを
エチルセロソルブアセテート、キシレン、酢酸ｎ−ブチ
ルの混合溶媒にとかし、０．２μｍのフィルターで濾過
して、粘度３ ｃｐｓのスピンコード用レジスト液を作
製した。Example 1 14.5 g of alkali-soluble cresol-formaldehyde novolasoc resin, photosensitizer naphthoquinone-(1,2)
-Diazide-(2)-5-sulfonic acid chloride and 2.3
．． 6 g of a condensation reaction product of 41-hydroxybenzophenone was dissolved in a mixed solvent of ethyl cellosolve acetate, xylene, and n-butyl acetate, and filtered through a 0.2 μm filter to prepare a resist solution for a spin code with a viscosity of 3 cps. .
シリコンウェハーに４００Ｏｒｐｍで塗布した。えられ
た膜厚は０．４μｍであった。A silicon wafer was coated at 400 rpm. The resulting film thickness was 0.4 μm.
低圧水銀灯を用い、最小線中０．４μｍを有するマスク
を通して１０秒間露光した。これを０．３ Ｎ水酸化カ
リウム水溶液で現像した。Using a low-pressure mercury lamp, exposure was carried out for 10 seconds through a mask having a minimum line of 0.4 μm. This was developed with a 0.3N aqueous potassium hydroxide solution.
パターンを顕微鏡により観察したところ０．１μｍの良
好なパターンが形成されていることがわかった。When the pattern was observed under a microscope, it was found that a good pattern of 0.1 μm was formed.
Claims (1)
レジスト材料において、０．５μｍ以下、このましくは
０．４μｍ以下、さらにこのましくは、０．３μｍ以下
の厚みに形成されていることを特徴とするポジ型フォト
レジスト薄膜。A positive photoresist material containing a quinonediazide compound as a photosensitizer, characterized in that it is formed to a thickness of 0.5 μm or less, preferably 0.4 μm or less, and more preferably 0.3 μm or less. Positive photoresist thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6236788A JPH01235947A (en) | 1988-03-16 | 1988-03-16 | Positive type photoresist thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6236788A JPH01235947A (en) | 1988-03-16 | 1988-03-16 | Positive type photoresist thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01235947A true JPH01235947A (en) | 1989-09-20 |
Family
ID=13198076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6236788A Pending JPH01235947A (en) | 1988-03-16 | 1988-03-16 | Positive type photoresist thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01235947A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100365509C (en) * | 2003-08-22 | 2008-01-30 | 奇美实业股份有限公司 | Positive light sensitive resin composition |
-
1988
- 1988-03-16 JP JP6236788A patent/JPH01235947A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100365509C (en) * | 2003-08-22 | 2008-01-30 | 奇美实业股份有限公司 | Positive light sensitive resin composition |
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