JPH01218123A - Driving circuit for semiconductor switch - Google Patents

Driving circuit for semiconductor switch

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Publication number
JPH01218123A
JPH01218123A JP4508388A JP4508388A JPH01218123A JP H01218123 A JPH01218123 A JP H01218123A JP 4508388 A JP4508388 A JP 4508388A JP 4508388 A JP4508388 A JP 4508388A JP H01218123 A JPH01218123 A JP H01218123A
Authority
JP
Japan
Prior art keywords
semiconductor switch
transistor
voltage
capacitor
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4508388A
Other languages
Japanese (ja)
Inventor
Fumio Mizohata
文雄 溝畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4508388A priority Critical patent/JPH01218123A/en
Publication of JPH01218123A publication Critical patent/JPH01218123A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce the voltage capacity of a current transformer by inserting a feedback circuit use semiconductor switch subject to on/off control in response to the operation of the semiconductor switch of a main circuit depending on a voltage across a resistor connected with a control power supply for charging the capacitor to a feedback circuit supplying a base current to a transistor(TR) of the semiconductor switch. CONSTITUTION:The secondary winding 3b of the current transformer 3 is connected between the base and emitter E of the TR 1 of the semiconductor switch to supply a base current to the TR 1 by a feedback circuit, to which the feedback circuit use semiconductor switch 11 operated with the voltage across the resistor 12 connected with the control power supply 16 for charging the capacitor 4 as the control voltage is inserted newly. Then the feedback circuit use semiconductor switch 11 is turned on when the semiconductor switch 2 of the main circuit is turned on, the capacitor 4 is discharged, the voltage is dropped and the voltage across the resistor is increased conversely and when the semiconductor switch 2 of the main circuit is turned off, the switch 11 is turned off. Thus, the drive circuit for the semiconductor switch to reduce the capacity of the feedback current transformer is obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明はバイポーラトランジスタとMOSFETとを
直列してなる半導体スイッチ、特に変流器帰還方式の場
合の駆動回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor switch formed by connecting a bipolar transistor and a MOSFET in series, and particularly to a drive circuit for a current transformer feedback system.

〔従来の技術] 第4図は例えばINTERNATIONAL RECT
ページ(1982年発行)に示されたこの種半導体スイ
ッチの基本的な回路図である。
[Prior art] FIG. 4 shows, for example, an INTERNATIONAL RECT
This is a basic circuit diagram of this type of semiconductor switch shown in Page (published in 1982).

同図において、バイポーラトランジスタ(以下単にトラ
ンジスタと称す)(1)とMOSFET+21とは、ト
ランジスタ(1)のエミッタEとMOSFET(2)の
ドレーンDとが接続されて半導体スイッチを構成する。
In the figure, a bipolar transistor (hereinafter simply referred to as a transistor) (1) and a MOSFET+21 constitute a semiconductor switch by connecting the emitter E of the transistor (1) and the drain D of the MOSFET (2).

(3)はその1次巻線(3a)がトランジスタ(1)の
コレクタと端子Pとの間に接続された変流器テ、ソノ2
 次巻線(3b ) ノ一端ハMOSFET”(2)の
ソースSに、他端はダイオード(6)を介してトランジ
スタ(1)のベースBにそれぞれ接続されている。そし
てM OS F E T [2)のソースSは端子Nに
接続されている。(4)および(5)はトランジスタ(
1)のベースBと端子Nとの間に接続されたそれぞれコ
ンデンサおよびツェナーダイオード、+71 +81は
トランジスタ(1)のコレクタCとベースBとの間に接
続されたそれぞれダイオードおよび抵抗、+9111は
端子PN間に接続されたそれぞれ直流電源および負荷で
ある。
(3) is a current transformer whose primary winding (3a) is connected between the collector of the transistor (1) and the terminal P.
One end of the next winding (3b) is connected to the source S of the MOSFET (2), and the other end is connected to the base B of the transistor (1) via the diode (6). The source S of 2) is connected to the terminal N. (4) and (5) are transistors (
1) A capacitor and a Zener diode connected between the base B and the terminal N, +71 +81 a diode and a resistor respectively connected between the collector C and the base B of the transistor (1), +9111 the terminal PN A DC power supply and a load are respectively connected between them.

次に動作について、第5図をも参照して説明する。先ず
一時刻t1以前では、M OS F E T (21の
ゲート電圧Vosは零であり、トランジスタ(1)およ
びMOSFET(21はオフ状態にあり、変流器(3)
の1次巻線(3a)、ダイオード(7)および抵抗(8
)を介してコンデンサ(4)が充電され、その両端電圧
Vcはツェナーダイオード(5)によって約15V程度
にクランプされる。次に1時刻t1にてM OS F 
E T +21のゲート電圧Vosを零から正のある値
に立ち上げMOSFET(21をターンオンさせると、
コンデンサ(4)からトランジスタ(1)およびM O
S F E T +21に放電々流、即ち、ベース電流
Inが流れるため、トランジスタ(1)も直ぐにターン
オンする。この結果、直流電源(9)から負荷QGを介
してトランジスタ(1)のコレクタ電流Icが流れ始め
る。このとき、変流器(3)の巻数比がnであるとその
2次巻線(3b)にはIcTz = Ic /nの電流
が流れ、この電流がダイオード(61,)ランジスタ(
1)およびMOSFET+21を通って流れる。しかし
て、変流器(3)による正帰還作用によりトランジスタ
(1)にベース電流Inを供給してトランジスタ(1)
のオン状態を維持する。
Next, the operation will be explained with reference to FIG. First, before time t1, the gate voltage Vos of MOSFET (21) is zero, the transistor (1) and MOSFET (21 are in the off state, and the current transformer (3)
primary winding (3a), diode (7) and resistor (8
), and the voltage Vc across it is clamped to about 15V by the Zener diode (5). Next, at time t1, M OS F
When the gate voltage Vos of E T +21 is raised from zero to a certain positive value and the MOSFET (21 is turned on,
Capacitor (4) to transistor (1) and M O
Since the discharge current, that is, the base current In flows through S F E T +21, the transistor (1) is also turned on immediately. As a result, the collector current Ic of the transistor (1) begins to flow from the DC power supply (9) through the load QG. At this time, if the turns ratio of the current transformer (3) is n, a current of IcTz = Ic /n flows through its secondary winding (3b), and this current flows through the diode (61,) transistor (
1) and MOSFET+21. Therefore, the base current In is supplied to the transistor (1) by the positive feedback action of the current transformer (3), and the transistor (1)
remains on.

次に、時刻t2にてMOSFETf21のゲート電圧V
G8を正から零に戻すとM OS F E T 121
は直ぐにターンオフする。その結果、トランジスタ(1
)のエミッタ回路が実質的にオープンになるため、コレ
クタ電流IcはコレクタCからベースBに抜けてコンデ
ンサ(4)およびツェナーダイオード(5)に流れる。
Next, at time t2, the gate voltage V of MOSFET f21
When G8 is returned from positive to zero, M OS F E T 121
turns off immediately. As a result, the transistor (1
) is substantially open, so the collector current Ic passes from the collector C to the base B and flows into the capacitor (4) and Zener diode (5).

このとき−コンデンサ(4)はMOSFET+21のド
レーンD、ソースS間のスイッチングサージ電圧の抑制
手段として作用する。そして、トランジスタ(1)のコ
レクタCとベース8間の阻止能力が回復する時刻t3に
てコレクタ電流Icは遮断され、トランジスタ(1)、
M OS F E T (21b ヨヒ変流器f31 
(D 直列体の両端電圧Vpyは直流電源電圧MEのレ
ベルまで立ち上リターンオフする。
At this time, the - capacitor (4) acts as a means for suppressing the switching surge voltage between the drain D and source S of MOSFET+21. Then, at time t3 when the blocking ability between the collector C and the base 8 of the transistor (1) is restored, the collector current Ic is cut off, and the transistor (1)
M OS F E T (21b Yohi current transformer f31
(D The voltage Vpy across the series body rises to the level of the DC power supply voltage ME and returns off.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の半導体スイッチの駆動回路は、以上のように変流
器(3)の2次巻線(3b)の両端がトランジスタ(1
)のベースB、l!:MO8FET(2)のソースsと
の間に接続されているので、変流器(3)に用いる鉄心
としては、トランジスタ(1)のベースB・エミッタ8
間の電圧降下分にMOSFET+21のドレインD・ソ
ースS間の電圧降下分を加えた分の電圧時間積分値で飽
和しないものにする必要がある。
In the conventional semiconductor switch drive circuit, as described above, both ends of the secondary winding (3b) of the current transformer (3) are connected to the transistor (1).
) base B, l! : Since it is connected between the source s of MO8FET (2), the iron core used for the current transformer (3) is the base B and emitter 8 of the transistor (1).
It is necessary to make the voltage-time integral value not saturated by adding the voltage drop between the drain D and the source S of MOSFET+21 to the voltage drop between them.

ところで、MOSFET(21のドレインD・ソースS
間には負荷電流自体が流れるためこの部分に生じる電圧
降下分は相当な値に達し、変流器(3)がそれに応じて
大きなものが必要となり経済的−効率的に不利となる問
題点があった。
By the way, the MOSFET (drain D and source S of 21)
Since the load current itself flows between them, the voltage drop that occurs in this part reaches a considerable value, and the current transformer (3) needs to be correspondingly large, which is disadvantageous in terms of economy and efficiency. there were.

この発明は上記の問題点を解消するためになされたもの
で、帰還用の変流器の容量を小さくできる半導体スイッ
チの駆動回路を得ることを目的とする。
The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a drive circuit for a semiconductor switch that can reduce the capacity of a current transformer for feedback.

〔課題を解決するための手段および作用〕この発明に係
る半導体スイッチの駆動回路は。
[Means and effects for solving the problems] A semiconductor switch drive circuit according to the present invention.

変流器の2次巻線を半導体スイッチのトランジスタのベ
ース・エミッタ間に接続してトランジスタにベース電流
を供給する帰還回路に、コンデンサの充電のため制御電
源との間に接続された抵抗にかかる電圧を制御電圧とし
て動作する帰還回路用半導体スイッチを新たに挿入した
ものである。そして−この帰還回路用半導体スイッチは
、主回路の半導体スイッチがターンオンすると上記コン
デンサが放電しその電圧が低下して逆に上記抵抗にかか
る電圧が上昇するためターンオンし、主回路の半導体ス
イッチがターンオフすると上記コンデンサが充電されそ
の電圧が上昇して逆に上記抵抗にかかる電圧が低下する
ためターンオフする。
A feedback circuit connects the secondary winding of the current transformer between the base and emitter of the transistor of the semiconductor switch to supply base current to the transistor, and a resistor connected between the control power supply and the control power supply for charging the capacitor. A semiconductor switch for the feedback circuit that operates using the voltage as the control voltage is newly inserted. - When the semiconductor switch in the main circuit is turned on, the semiconductor switch for the feedback circuit is turned on because the capacitor discharges and its voltage drops, and conversely the voltage applied to the resistor increases, and the semiconductor switch in the main circuit turns off. Then, the capacitor is charged and its voltage increases, and the voltage applied to the resistor decreases, turning it off.

〔実施例〕〔Example〕

以下、この発明の一実施例を図面について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図において、(1)ないしく6)および(91(1
0は従来と同一であるので説明を省略する。但し、変流
器(3)の2次巻線(3b)の下端はトランジスタ(1
)のエミッタEに接続されている。圓は帰還回路用MO
5FETで、そのドレインはダイオード(6)のカソー
ドに、ソースはトランジスタ(1)のベースにそれぞれ
接続されている。fLl 13はM OS F E T
 +Illのゲートとソースとの間に並列に接続された
それぞれ抵抗およびダイオード、(141はMOSFE
T(IllのゲートとMOSFET(21のソースとの
間に接続されたコンデンサ、1週は駆動信号発生回路で
、制御電源(161とともにコンデンサ(1滲と並列に
接続され、その信号出力はM OS F E T (2
1のゲートGへ入力される。
In Figure 1, (1) to 6) and (91(1)
Since 0 is the same as the conventional one, the explanation will be omitted. However, the lower end of the secondary winding (3b) of the current transformer (3) is connected to the transistor (1
) is connected to the emitter E of The circle is MO for the feedback circuit
5FET, its drain is connected to the cathode of the diode (6), and its source is connected to the base of the transistor (1). fLl 13 is M OS F E T
A resistor and a diode are connected in parallel between the gate and source of +Ill, respectively (141 is a MOSFE
The capacitor connected between the gate of T (Ill and the source of MOSFET (21) is connected in parallel with the control power supply (161) and the capacitor (1), and its signal output is the drive signal generation circuit. FET (2
It is input to gate G of 1.

次に動作について第2図をも参照して説明する。Next, the operation will be explained with reference to FIG.

トランジスタ(1)およびMOSFET(21がオフ状
態であれば、制御電源0eまたはコンデンサ(14より
抵抗0X5を介してコンデンサ(4)が充電され、その
両端電圧Vcはツェナーダイオード(5)によって約1
5V程度にクランプされる。次に、時刻t1にてMOS
FET(2)のゲート電圧vGSを零から正のある値に
立ち上げM OS F E T +2+をターンオンさ
せると、コンデンサ(4)からトランジスタ(1)およ
びMOSFET[21に放電電流、即ちベース電流IB
が流れるため、トランジスタは)も直ぐにターンオンす
る。コンデンサ(4)は放電しM OS F E T 
(t]Jのソース電位は、トランジスタ(1)のベース
B・エミッタE間電圧とM OS F E T +21
のドレインD・ソー28間電圧の和で数V程度の値にま
で降下する。この結果、MO5FETIIIIのゲート
には、制御電源α0の電圧を15Vとすれば、10数V
まで正の電圧が印加されたことになり一直ちにターンオ
ンする。また、これと時を同じくして直流電源(9)か
ら負荷0αを介してトランジスタ(1)のコレクタ電流
Icが流れ始める。
When the transistor (1) and MOSFET (21) are off, the capacitor (4) is charged by the control power supply 0e or the capacitor (14) via the resistor 0X5, and the voltage Vc across it is approximately 1
It is clamped to about 5V. Next, at time t1, the MOS
When the gate voltage vGS of the FET (2) is raised from zero to a certain positive value and the MOSFET +2+ is turned on, a discharge current from the capacitor (4) to the transistor (1) and the MOSFET [21, that is, the base current IB
flows, so the transistor turns on immediately. Capacitor (4) is discharged and MOSFET
(t) The source potential of J is the voltage between base B and emitter E of transistor (1) and M OS F E T +21
The sum of the voltages between the drain D and the source 28 drops to a value of about several volts. As a result, if the voltage of the control power supply α0 is 15V, the gate of MO5FETIII has a voltage of more than 10 V.
Since a positive voltage has been applied to the device, it immediately turns on. At the same time, the collector current Ic of the transistor (1) starts flowing from the DC power supply (9) through the load 0α.

そして、変流器(3)の巻数比がnであるとその2次巻
線(3b ) ニはICT ! = Ic /nの電流
が流れ、これがダイオード(6)、MOS F ET(
111オ、J:ヒト57ジスタ(1)を還流し、正帰還
作用によりトランジスタ(1)にベース電流IBを供給
してトランジスタ(1)のオン状態を維持する。とくに
この場合、変流器(3)の2次巻線(3b)には、大き
な負荷電流(コレクタ電流Ic)が流れるM OS F
 E T +21での電圧降下分は加算されず、新たに
加算されるMO8FETαDでの電圧降下分はその電流
1cTtが負荷電流Icの1/n倍で小さいことから、
結果として変流器(3)の2次巻線(3b)の電圧定格
は従来に比較して大巾に低減しうることになる。
If the turns ratio of the current transformer (3) is n, its secondary winding (3b) is ICT! A current of = Ic /n flows through the diode (6) and the MOS FET (
111O, J: Freewheeling the human 57 transistor (1) and supplying the base current IB to the transistor (1) by positive feedback action to maintain the on state of the transistor (1). Particularly in this case, a large load current (collector current Ic) flows through the secondary winding (3b) of the current transformer (3).
The voltage drop at E T +21 is not added, and the newly added voltage drop at MO8FET αD is small because its current 1cTt is 1/n times the load current Ic.
As a result, the voltage rating of the secondary winding (3b) of the current transformer (3) can be significantly reduced compared to the conventional one.

動作としては、次に一時刻t2にてMOSFET(2)
のゲート電圧Vasを正から零に戻すと、MO3F E
 T +21は直ぐにターンオフする。その結果、トラ
ンジスタ(1)のエミッタEの回路が実質的にオープン
になり、コレクタ電流IcはコレクタCからベースBに
抜けてコンデンサ(4)およびツェナーダイオード(5
)に流れる。ここは従来の場合と同様であるがMOSF
ET(Illに対しては、ツェナーダイオード(5)の
電圧が15Vにクランプされ一制御電源(161の電圧
15Vと同等となるので、抵抗(12の電圧従つつてゲ
ート・ソース間の電圧はほぼ零となり、MOSFETd
llはターンオフして変流器(3)の2次回路即ち、帰
還回路はオープンとなる。その後の動作は従来と同様で
あるので省略する。
Next, at time t2, MOSFET (2)
When the gate voltage Vas of MO3F E is returned from positive to zero, MO3F E
T+21 turns off immediately. As a result, the circuit of the emitter E of the transistor (1) becomes substantially open, and the collector current Ic flows from the collector C to the base B, passing through the capacitor (4) and the Zener diode (5).
). This is the same as the conventional case, but MOSFET
For ET (Ill), the voltage of the Zener diode (5) is clamped to 15V, which is equivalent to the voltage of 15V of the control power supply (161), so the voltage between the gate and source of the resistor (12) is approximately becomes zero, MOSFETd
ll is turned off, and the secondary circuit, ie, the feedback circuit, of the current transformer (3) becomes open. The subsequent operation is the same as the conventional one, and will therefore be omitted.

なお、第3図は第1図におけるM OS F E T 
(11)の替わりにトランジスタαηを使用したもので
第1図と同様の動作、効果を奏するものである。
In addition, FIG. 3 shows the MOS FET in FIG. 1.
(11) is replaced by a transistor αη, and the same operation and effect as in FIG. 1 is achieved.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、半導体スイッチのト
ランジスタにベース電流を供給する帰還回路に、コンデ
ンサの充電のため制御電源との間に接続された抵抗にか
かる電圧により主回路の半導体スイッチの動作に応じて
オンオフ制御される帰還回路用半導体スイッチを挿入し
たので、大きな負荷電流が流れる主回路のMOSFET
の電圧降下分が変流器の2次巻線に印加されず、変流器
の電圧容量を低減できるという効果がある。
As described above, according to the present invention, the voltage applied to the resistor connected between the feedback circuit that supplies the base current to the transistor of the semiconductor switch and the control power supply for charging the capacitor causes the semiconductor switch of the main circuit to be activated. By inserting a semiconductor switch for the feedback circuit that is controlled on and off according to the operation, the MOSFET in the main circuit through which a large load current flows
This has the effect that the voltage drop in the current transformer is not applied to the secondary winding of the current transformer, and the voltage capacity of the current transformer can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例による半導体スイッチの駆
動回路を示す回路図− 第2図は第1図の回路の動作を説明するタイムチャート
、第3図はこの発明の他の実施例による半導体スイッチ
の駆動回路を示す回路図、第4図は従来の半導体の駆動
回路を示す回路図、第5図は第4図の回路の動作を説明
するタイムチャートである。 図において、(1)はトランジスタ、(2)はMOSF
ET。 (a) (3a )(3b )はそれぞれ変流器、その
1次巻線およびその2次巻線、(4)はコンデンサ、(
6)はダイオード、(2)は帰還用MO5FET、(L
3は抵抗、αQは制御電源である。 なお、各図中同一符号は同一または相当部分を示す。 代理人 弁理士  大 岩 増 雌 用1図 !、トランジスタ       δ タ゛イ才一ドJb
  変奄ボL岩ま02ン欠如泉 4、)/デンV 第2図 11         τ2τ374 第3図 ρ
FIG. 1 is a circuit diagram showing a semiconductor switch driving circuit according to an embodiment of the present invention. FIG. 2 is a time chart explaining the operation of the circuit of FIG. 1. FIG. FIG. 4 is a circuit diagram showing a drive circuit for a semiconductor switch, FIG. 4 is a circuit diagram showing a conventional semiconductor drive circuit, and FIG. 5 is a time chart illustrating the operation of the circuit shown in FIG. 4. In the figure, (1) is a transistor, (2) is a MOSF
E.T. (a) (3a) and (3b) are a current transformer, its primary winding and its secondary winding, respectively, (4) is a capacitor, (
6) is a diode, (2) is a feedback MO5FET, (L
3 is a resistor, and αQ is a control power source. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masu Oiwa, Patent Attorney 1 diagram for female! , transistor δ tie wire Jb
Henkabo L Iwama02nKatsusen4, )/Den V Fig. 2 11 τ2τ374 Fig. 3 ρ

Claims (1)

【特許請求の範囲】 主電流路に対してトランジスタとMOSFETとをそれ
ぞれのエミッタとドレインとを接続することにより直列
にして構成された半導体スイッチ、1次巻線が上記半導
体スイッチと直列に接続され2次巻線の一端がダイオー
ドを介して上記トランジスタのベースに上記2次巻線の
他端が上記トランジスタのエミッタにそれぞれ接続され
て上記トランジスタにベース電流を供給する帰還回路を
構成する変流器、上記トランジスタのベースと上記MO
SFETのソースとの間に接続されたコンデンサ、この
コンデンサに抵抗を介して接続された制御電源を備えた
半導体スイッチの駆動回路において、 上記抵抗にかかる電圧を制御電圧として上記帰還回路に
挿入され、上記半導体スイッチのオン時上記コンデンサ
の放電に基づき上記抵抗にかかる電圧の上昇でオンし、
上記半導体スイッチのオフ時上記コンデンサの充電に基
づき上記抵抗にかかる電圧の降下でオフする帰還回路用
半導体スイッチを備えたことを特徴とする半導体スイッ
チの駆動回路。
[Claims] A semiconductor switch configured by connecting a transistor and a MOSFET in series by connecting their emitters and drains to the main current path, and a primary winding connected in series with the semiconductor switch. A current transformer in which one end of a secondary winding is connected to the base of the transistor via a diode, and the other end of the secondary winding is connected to the emitter of the transistor, forming a feedback circuit that supplies base current to the transistor. , the base of the transistor and the MO
In a semiconductor switch drive circuit comprising a capacitor connected between the source of the SFET and a control power supply connected to the capacitor via a resistor, the voltage applied to the resistor is inserted into the feedback circuit as a control voltage, When the semiconductor switch is turned on, the voltage applied to the resistor increases due to the discharge of the capacitor, and the semiconductor switch turns on.
A drive circuit for a semiconductor switch, comprising a feedback circuit semiconductor switch that turns off due to a voltage drop across the resistor based on charging of the capacitor when the semiconductor switch is turned off.
JP4508388A 1988-02-25 1988-02-25 Driving circuit for semiconductor switch Pending JPH01218123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4508388A JPH01218123A (en) 1988-02-25 1988-02-25 Driving circuit for semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4508388A JPH01218123A (en) 1988-02-25 1988-02-25 Driving circuit for semiconductor switch

Publications (1)

Publication Number Publication Date
JPH01218123A true JPH01218123A (en) 1989-08-31

Family

ID=12709433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4508388A Pending JPH01218123A (en) 1988-02-25 1988-02-25 Driving circuit for semiconductor switch

Country Status (1)

Country Link
JP (1) JPH01218123A (en)

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