JPH01212759A - Target for sputtering inside of tube - Google Patents
Target for sputtering inside of tubeInfo
- Publication number
- JPH01212759A JPH01212759A JP3622788A JP3622788A JPH01212759A JP H01212759 A JPH01212759 A JP H01212759A JP 3622788 A JP3622788 A JP 3622788A JP 3622788 A JP3622788 A JP 3622788A JP H01212759 A JPH01212759 A JP H01212759A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- tube
- alloy
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 29
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 23
- 239000000956 alloy Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000011888 foil Substances 0.000 abstract description 11
- 238000004804 winding Methods 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract description 3
- 239000000498 cooling water Substances 0.000 abstract description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract description 2
- 229910001362 Ta alloys Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910018106 Ni—C Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は管材内面スパッタ用ターゲットに係り、特に小
口径管材の内面にアモルファス合金組成のスパッタ膜を
形成するに好適な管材内面スパッタ用ターゲットに関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a sputtering target for the inner surface of a tube material, and more particularly to a target for sputtering the inner surface of a tube material suitable for forming a sputtered film of an amorphous alloy composition on the inner surface of a small diameter tube material. .
［従来の技術］
減圧容器中で１対の電極に直流あるいは交流電圧を印加
してグロー放電を起こし、陰極のターゲットから原子を
飛び出させて対象物に付着させるスパッタリング法は、
実験室条件では１０−２ｍｍＨｇ （１，３３Ｐａ）程
度の真空度、印加電圧１．０〜２０ｋＶ程度で行われ、
金属薄膜をつくる方法として古くから用いられており、
各種物質の工業的蒸着法として広く普及している。[Prior Art] The sputtering method involves applying direct current or alternating current voltage to a pair of electrodes in a reduced pressure container to cause glow discharge, causing atoms to fly out from a cathode target and adhere to the object.
Under laboratory conditions, it is carried out at a vacuum level of about 10-2 mmHg (1.33 Pa) and an applied voltage of about 1.0 to 20 kV.
It has been used for a long time as a method for making thin metal films.
It is widely used as an industrial vapor deposition method for various substances.
ところで、スパッタリングにより２種以上の金属よりな
る合金膜を形成する場合、そのスパッタターゲットとし
ては、所望とする合金膜の組成に応じた組成の合金より
なるものが用いられるが、合金の種類によっては、所望
の組成及び形状のターゲットを製造するのが困難なもの
がある。By the way, when forming an alloy film made of two or more metals by sputtering, a sputter target made of an alloy with a composition depending on the composition of the desired alloy film is used, but depending on the type of alloy, However, it is difficult to manufacture a target with a desired composition and shape.
例えば、耐食性のアモルファス合金組成、具体的にはＦ
ｅ−Ｎｉ−Ｃｒ−Ｔａ合金膜をスパッタリングにより形
成する場合には、この組成のターゲットが必要となるが
、Ｔａのような高融点金属を含む合金は溶解、鋳造が困
難であるため、溶解法により製造することは極めて難し
い。このように溶解法を採用することができない合金系
については、適当な粉末を成形し、これをホットプレス
又は高温にて焼成して焼結体とする焼結法が採用される
。For example, a corrosion-resistant amorphous alloy composition, specifically F
When forming an e-Ni-Cr-Ta alloy film by sputtering, a target with this composition is required, but since alloys containing high-melting point metals such as Ta are difficult to melt and cast, the melting method is not suitable. It is extremely difficult to manufacture by For alloy systems for which the melting method cannot be employed, a sintering method is employed in which a suitable powder is molded and then hot-pressed or fired at a high temperature to form a sintered body.
［発明が解決しようとする課題］
しかしながら、焼結体ターゲットでは、粉末プロセスを
採用する以上、その純度にも限度があり、また、得られ
る焼結体の気孔率にも限度があり、十分に緻密なものが
得られない。[Problems to be Solved by the Invention] However, since a powder process is adopted for the sintered target, there is a limit to its purity, and there is also a limit to the porosity of the obtained sintered body. I can't get anything precise.
一方、スパッタリングにより管材内面に合金膜を形成す
る場合、ターゲットとしてはその管材内部に挿入可能な
棒状ないし管状のターゲットが必要となるが、焼結法で
は製造されるターゲット形状に制限があり、棒状ないし
管状のターゲットを製造することができないという欠点
があった。On the other hand, when forming an alloy film on the inner surface of a tube by sputtering, a rod-shaped or tubular target that can be inserted into the tube is required, but with the sintering method, there are restrictions on the target shape that can be manufactured, This method has the disadvantage that it is not possible to manufacture a tubular target.
このようなことから、従来においては、特に小口径の管
材の内面に、耐食性アモルファス合金のスパッタリング
膜を形成するに好適なターゲットが提供されておらず、
このようなターゲットの開発が望まれていた。For this reason, in the past, a target suitable for forming a sputtering film of a corrosion-resistant amorphous alloy on the inner surface of a pipe material of a particularly small diameter has not been provided.
Development of such a target has been desired.
本発明は上記従来の問題点を解決し、小口径の管材の内
面にスパッタリング膜を形成するに有用な、複合ターゲ
ットを提供することを目的とする。An object of the present invention is to solve the above-mentioned conventional problems and provide a composite target useful for forming a sputtering film on the inner surface of a small diameter tube.
［課題を解決するための手段］
本発明の管材内面スパッタ用ターゲットは、鋳造体より
なる管状又は棒状の本体に、該本体の金属又は合金と異
なる金属又は合金の細条体を巻き付けてなることを特徴
とする。[Means for Solving the Problems] The target for sputtering the inner surface of a tube according to the present invention is formed by wrapping a thin strip of a metal or alloy different from the metal or alloy of the main body around a tubular or rod-shaped main body made of a cast body. It is characterized by
［作 用コ
本発明の管材内面スパッタ用ターゲットは、鋳造体より
なる管状又は棒状の本体に、細条体を巻各付けてなるも
のであるため、本体を構成する金属又は合金と、細条体
を構成する金属又は合金とからなる複合ターゲットが容
易に提供される。[Function] Since the target for sputtering the inner surface of a tube according to the present invention is formed by winding strips around a tubular or rod-shaped main body made of a cast body, the metal or alloy constituting the main body and the strips are different from each other. A composite target consisting of metals or alloys constituting the body can be easily provided.
この場合、本体は鋳造体であるため、容易に管状、棒状
形状とすることができ、また、焼結法における純度低下
、緻密度低下の問題もない。しかも、本体の組成のほか
、細条体の幅やその巻き付は間隔を調整することにより
、ターゲット組成も任意に調節することができる。In this case, since the main body is a cast body, it can be easily formed into a tubular or rod-like shape, and there is no problem of a decrease in purity or density due to the sintering method. Furthermore, in addition to the composition of the main body, the target composition can also be adjusted as desired by adjusting the width of the strips and the interval between the strips.
［実施例］ 以下、図面を参照して実施例について説明する。[Example] Examples will be described below with reference to the drawings.
第１図は本発明の管材内面スパッタ用ターゲットの一実
施例を示す部分斜視図、第２図は第１図ＩＩ −ＩＩ線
に沿う断面図である。FIG. 1 is a partial perspective view showing an embodiment of a target for sputtering on the inner surface of a tube according to the present invention, and FIG. 2 is a sectional view taken along the line II--II in FIG.
本実施例の管材内面スパッタ用ターゲット１は、Ｆｅ−
Ｎｉ−Ｃｒ合金製の管状の本体２の外周に、Ｔａの平箔
３を一定間隔で螺旋状に巻き付け、スポット溶接止め（
溶接部４）にて固定してなるものである。The target 1 for sputtering on the inner surface of a tube according to this embodiment is Fe-
Ta flat foil 3 is spirally wound around the outer periphery of the tubular body 2 made of Ni-Cr alloy at regular intervals, and spot welded (
It is fixed at a welded portion 4).
なお、第１図及び第２図では、管状の本体に、平箔の細
条体を巻き付ける例を示したが、本発明において、本体
は中実の棒状であっても良い。しかしながら、管状の場
合には、内部に冷却水を通すことができ、スパッタリン
グ操作が容易となるという利点がある。Although FIGS. 1 and 2 show an example in which a strip of flat foil is wound around a tubular main body, in the present invention, the main body may be in the shape of a solid rod. However, in the case of a tubular shape, there is an advantage that cooling water can be passed inside and the sputtering operation becomes easy.
また、細条体は平箔に限らず、細線であっても良い。こ
の細条体は、１種類を巻き付けるものに限らず、例えば
Ａ−Ｂ−Ｃ−Ｄ４成分系のターゲットとする場合、第３
図に示す如く、Ａ−Ｂ合金よりなる本体５に、Ｃ金属よ
りなる平箔６とＤ金属よりなる平箔７をひきそろえて、
一定間隔で巻き付けたものでも良い。なお、第４図に示
す如く、茶漬６，７等の２以上の細条体を反対方向に巻
き付けたものとしても良い。Further, the strip body is not limited to a flat foil, but may be a thin wire. This strip is not limited to wrapping one type of strip, for example, when targeting a four-component A-B-C-D system, the third
As shown in the figure, a flat foil 6 made of C metal and a flat foil 7 made of D metal are arranged on a main body 5 made of A-B alloy,
It may also be wrapped at regular intervals. In addition, as shown in FIG. 4, two or more strips of chazuke 6, 7, etc. may be wound in opposite directions.
このような本発明の管材内面スパッタ用ターゲットは、
通常の押出鋳造法等により製造された管状又は棒状の本
体に、別途製造された平箔等の細条体を巻き付けて必要
に応じて溶接等により固定することにより容易に製造す
ることができる。Such a target for sputtering on the inner surface of a tube according to the present invention,
It can be easily manufactured by wrapping a thin strip such as a separately manufactured flat foil around a tubular or rod-shaped main body manufactured by a normal extrusion casting method etc. and fixing it by welding etc. as necessary.
この場合、本体を構成する金属又は合金と、細条体を構
成する金属又は合金の選定は任意であるが、例えばＡ−
Ｂ−Ｃ−Ｄ４成分系のターゲットを製造する場合には、
Ａ、Ｂ、Ｃ，Ｄのうちの最も高融点ないし高活性の金属
、例えばＤを細条体とし、他のＡ、Ｂ、Ｃの合金により
本体を鋳造するのが有利である。In this case, the metal or alloy constituting the main body and the metal or alloy constituting the strip body can be selected arbitrarily, but for example, A-
When manufacturing a B-C-D four-component target,
It is advantageous to use the metal with the highest melting point or the highest activity among A, B, C, and D, for example D, as the strip, and to cast the body from an alloy of the other A, B, and C.
細条体の幅、巻き付は間隔等は、本体の外径等に応じて
所望の合金系の組成が得られるように適宜決定される。The width, winding distance, etc. of the strips are appropriately determined depending on the outer diameter of the main body, etc. so as to obtain a desired alloy composition.
以下、実験例について説明する。An experimental example will be explained below.
実験例１
鋳造により得られたステンレス（Ｆｅ−約８重量％Ｎｉ
−約１８重量％Ｃｒ）族チューブ（内径約２ｍｍ、外径
約４ｍｍ）の外周に、厚さ１ｍｍ、幅５ｍｍのＴａ箔を
螺旋状に巻き付け、スポット溶接止めして第１図に示す
ようなターゲットを作製した。なお、Ｔａ箔の巻き付は
間隔は、５ｍｍとした。Experimental Example 1 Stainless steel obtained by casting (Fe-approximately 8% by weight Ni)
- Ta foil with a thickness of 1 mm and width of 5 mm is spirally wrapped around the outer periphery of an approximately 18 wt% Cr) family tube (inner diameter of approximately 2 mm, outer diameter of approximately 4 mm), and fixed by spot welding, as shown in Figure 1. A target was created. Note that the Ta foil was wrapped at a spacing of 5 mm.
このターゲット１０を、第５図に示すようなスパッタリ
ング装置に取り付けて、ベロー１１の内面にスパッタリ
ング膜を形成した。第５図において、１２は石英ガラス
管、１３はクランプ、１４は電磁石、１５は真空計、１
６はベロー１１の伸縮用のモータ、１７はベアリングで
ある。スパッタ電源はＩＫＶとし、スパッタ雰囲気はＡ
ｒ１０−３Ｔｏｒｒとした。スパッタリング中、ターゲ
ット１０の管内には冷却水を通水した。This target 10 was attached to a sputtering apparatus as shown in FIG. 5, and a sputtered film was formed on the inner surface of the bellows 11. In Fig. 5, 12 is a quartz glass tube, 13 is a clamp, 14 is an electromagnet, 15 is a vacuum gauge, 1
6 is a motor for extending and retracting the bellows 11, and 17 is a bearing. The sputtering power source is IKV, and the sputtering atmosphere is A.
It was set to r10-3 Torr. During sputtering, cooling water was passed through the tube of the target 10.
その結果、厚さ０．１μｍの下記組成のＦｅ−Ｎｉ−Ｃ
ｒ−Ｔａアモルファス合金膜が良好に形成された。As a result, Fe-Ni-C with the following composition with a thickness of 0.1 μm was obtained.
An r-Ta amorphous alloy film was successfully formed.
合金膜組成
Ｆｅ ： １７ｗｔ％
Ｎｉ：２．１ｗｔ ％
Ｃｒ：４．３ｗｔ ％
Ｔａ ： ７６、 ６ｗｔ ％
［発明の効果］
以上詳述した通り、本発明の管材内面スパッタ用ターゲ
ットによれば
■ 非常に細径の管状又は棒状ターゲットが提供される
ため、内径の小さい管材の内面へのスパッタリングが可
能とされる。Alloy film composition Fe: 17wt% Ni: 2.1wt% Cr: 4.3wt% Ta: 76, 6wt% [Effects of the Invention] As detailed above, according to the target for sputtering on the inner surface of a pipe according to the present invention, Since a tubular or rod-shaped target with a small diameter is provided, sputtering onto the inner surface of a tube with a small internal diameter is possible.
■ 管状又は棒状ターゲットに加工することができない
ような合金組成のターゲットも提供される。■ Targets with alloy compositions that cannot be processed into tubular or rod-shaped targets are also provided.
■ 鋳造及び細条体の巻き付けにより製造できるので、
その製造が容易で、製品のコストダウンを図れる。■ Can be manufactured by casting and winding strips, so
It is easy to manufacture and can reduce the cost of the product.
■ 細条体の幅や巻き付はピッチを調整することにより
、スパッタ膜の組成を容易に制御することができる。(2) By adjusting the width and winding pitch of the strips, the composition of the sputtered film can be easily controlled.
等の効果が奏される。Effects such as this are achieved.
本発明の管材内面スパッタ用ターゲットは、特に、内径
の小さい管の内面に耐食性アモルファス合金膜を形成す
る場合等に極めて有用である。The target for sputtering on the inner surface of a tube according to the present invention is extremely useful particularly when forming a corrosion-resistant amorphous alloy film on the inner surface of a tube with a small inner diameter.
第１図は本発明の一実施例に係る管材内面スパッタ用タ
ーゲットを示す斜視図、第２図は第１図ＩＩ −ＩＩ線
に沿う断面図、第３図及び第４図は本発明の管材内面ス
パッタ用ターゲットの他の実施例を示す斜視図、第５図
は実験例１におけるスパッタリング装置を示す断面図で
ある。
１・・・管材内面スパッタ用ターゲット、２・・・本体
、 ３・・・平箔、 ４・・・溶接部。
代理人 弁理士 重 野 剛FIG. 1 is a perspective view showing a sputtering target for the inner surface of a tube according to an embodiment of the present invention, FIG. 2 is a sectional view taken along the line II-II in FIG. 1, and FIGS. 3 and 4 are a tube material of the present invention. FIG. 5 is a perspective view showing another example of the target for internal sputtering, and a cross-sectional view showing the sputtering apparatus in Experimental Example 1. DESCRIPTION OF SYMBOLS 1... Target for sputtering on the inner surface of tube material, 2... Main body, 3... Flat foil, 4... Welding part. Agent Patent Attorney Tsuyoshi Shigeno
Claims (1)
金属又は合金と異なる金属又は合金の細条体を巻き付け
てなることを特徴とする管材内面スパッタ用ターゲット
。(1) A target for sputtering the inner surface of a tube, characterized in that it is formed by wrapping a thin strip of a metal or alloy different from the metal or alloy of the main body around a tubular or rod-shaped main body made of a cast body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3622788A JPH086175B2 (en) | 1988-02-18 | 1988-02-18 | Target for inner surface sputtering of pipes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3622788A JPH086175B2 (en) | 1988-02-18 | 1988-02-18 | Target for inner surface sputtering of pipes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01212759A true JPH01212759A (en) | 1989-08-25 |
| JPH086175B2 JPH086175B2 (en) | 1996-01-24 |
Family
ID=12463890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3622788A Expired - Lifetime JPH086175B2 (en) | 1988-02-18 | 1988-02-18 | Target for inner surface sputtering of pipes |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH086175B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008000575A1 (en) * | 2006-06-26 | 2008-01-03 | Nv Bekaert Sa | A method of manufacturing a rotatable sputter target |
| JP2013019031A (en) * | 2011-07-12 | 2013-01-31 | Tokuriki Honten Co Ltd | Cylindrical target and method for manufacturing the same |
| CN104032275A (en) * | 2014-06-12 | 2014-09-10 | 上海和辉光电有限公司 | Joint type rotary target and forming method thereof |
| US9368330B2 (en) * | 2014-05-02 | 2016-06-14 | Bh5773 Ltd | Sputtering targets and methods |
| US10138544B2 (en) | 2011-06-27 | 2018-11-27 | Soleras, LTd. | Sputtering target |
| JP2021529890A (en) * | 2018-08-14 | 2021-11-04 | アトメタル テック ピーティーイー エルティーディーＡｔｔｏｍｅｔａｌ Ｔｅｃｈ Ｐｔｅ． Ｌｔｄ． | A pipe with an amorphous coated inner surface and its manufacturing method |
-
1988
- 1988-02-18 JP JP3622788A patent/JPH086175B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008000575A1 (en) * | 2006-06-26 | 2008-01-03 | Nv Bekaert Sa | A method of manufacturing a rotatable sputter target |
| US10138544B2 (en) | 2011-06-27 | 2018-11-27 | Soleras, LTd. | Sputtering target |
| JP2013019031A (en) * | 2011-07-12 | 2013-01-31 | Tokuriki Honten Co Ltd | Cylindrical target and method for manufacturing the same |
| US9368330B2 (en) * | 2014-05-02 | 2016-06-14 | Bh5773 Ltd | Sputtering targets and methods |
| CN104032275A (en) * | 2014-06-12 | 2014-09-10 | 上海和辉光电有限公司 | Joint type rotary target and forming method thereof |
| JP2021529890A (en) * | 2018-08-14 | 2021-11-04 | アトメタル テック ピーティーイー エルティーディーＡｔｔｏｍｅｔａｌ Ｔｅｃｈ Ｐｔｅ． Ｌｔｄ． | A pipe with an amorphous coated inner surface and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH086175B2 (en) | 1996-01-24 |
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