JPH0119291B2 - - Google Patents

Info

Publication number
JPH0119291B2
JPH0119291B2 JP56070763A JP7076381A JPH0119291B2 JP H0119291 B2 JPH0119291 B2 JP H0119291B2 JP 56070763 A JP56070763 A JP 56070763A JP 7076381 A JP7076381 A JP 7076381A JP H0119291 B2 JPH0119291 B2 JP H0119291B2
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
piezoelectric substrate
filter element
wave filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56070763A
Other languages
Japanese (ja)
Other versions
JPS57186820A (en
Inventor
Nobuki Yamaji
Yoshihiko Yasuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP7076381A priority Critical patent/JPS57186820A/en
Publication of JPS57186820A publication Critical patent/JPS57186820A/en
Publication of JPH0119291B2 publication Critical patent/JPH0119291B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02858Means for compensation or elimination of undesirable effects of wave front distortion
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02842Means for compensation or elimination of undesirable effects of reflections

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

【発明の詳細な説明】 本発明は弾性表面波フイルタ素子に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a surface acoustic wave filter element.

一般に弾性表面波フイルタ素子は第1図及び第
2図に示すようにLiTaO3,LiNbO3、水晶、セ
ラミツクスなどからなる圧電基板1上に電気信号
を弾性表面波に変換するためのインターデジタル
形を有する入力トランスデユーサ(以下入力IDT
と云う)2と、この入力IDT2にシールド電極3
を介して所定距離をもつて配設された弾性表面波
を電気信号に変換するインターデジタル形を有す
る出力トランスデユーサ(以下出力IDTと云う)
4及び圧電基板1の弾性表面波伝播方向の端部近
傍に設けられた吸音剤層5を具備しており、この
弾性表面波フイルタ素子の特性は主として入力
IDT2、出力IDT4の交叉幅やピツチによつて決
定される。
Generally, a surface acoustic wave filter element has an interdigital type for converting an electric signal into a surface acoustic wave on a piezoelectric substrate 1 made of LiTaO 3 , LiNbO 3 , crystal, ceramics, etc., as shown in FIGS. 1 and 2. input transducer (hereinafter referred to as input IDT)
)2, and a shield electrode 3 is connected to this input IDT2.
An output transducer (hereinafter referred to as output IDT) having an interdigital type that converts surface acoustic waves into electrical signals, which are arranged at a predetermined distance via
4 and a sound absorbing layer 5 provided near the end of the piezoelectric substrate 1 in the surface acoustic wave propagation direction, and the characteristics of this surface acoustic wave filter element are mainly determined by the input.
It is determined by the intersection width and pitch of IDT2 and output IDT4.

この様な弾性表面波フイルタ素子は入力IDT
2、出力IDT4のいずれか一方(本例では出力
IDT)は交叉幅を一定にし、他方(本例では入力
IDT)は交叉幅及びピツチを変える、いわゆるア
ポダイズ形IDTで形成する。この構成では弾性表
面波フイルタ素子の周波数特性が入力IDT2と出
力IDT4の周波数特性とのコンボリユーシヨンに
より決定されるため設計が容易となる。またアポ
ダイズ形IDTの交叉していない部分には弾性表面
波の位相づれを補償するためにダミー電極6が設
けられているが、出力IDT4と反対方向に進む弾
性表面波は信号伝搬には寄与しないから位相補償
が必要なく、通常重み付けの最大幅の近傍より出
力IDT4と反対方向に交叉部を除き導電部材によ
り塗りつぶし、いわゆる塗りつぶし電極7として
いる。また入力IDT2から励振される弾性表面波
のうち出力IDT4と反対向きのものは圧電基板上
に設けられた吸音剤層5により吸音し、不要な反
射波として出力IDT4に受信されることを防いで
いる。
This kind of surface acoustic wave filter element is used as input IDT.
2. Either one of the output IDT4 (in this example, the output
IDT) has a constant crossover width, while the other (in this example, the input
IDT) is formed with a so-called apodized IDT that changes the crossover width and pitch. In this configuration, the frequency characteristics of the surface acoustic wave filter element are determined by the convolution of the frequency characteristics of the input IDT 2 and the output IDT 4, so that the design becomes easy. In addition, a dummy electrode 6 is provided in the non-intersecting portion of the apodized IDT to compensate for the phase shift of the surface acoustic waves, but the surface acoustic waves traveling in the opposite direction to the output IDT 4 do not contribute to signal propagation. Therefore, there is no need for phase compensation, and the area near the maximum weighting width in the direction opposite to the output IDT 4 is filled with a conductive member except for the crossing portion, thereby forming a so-called filled electrode 7. Also, among the surface acoustic waves excited from the input IDT 2, those directed in the opposite direction to the output IDT 4 are absorbed by the sound absorbing material layer 5 provided on the piezoelectric substrate, and are prevented from being received by the output IDT 4 as unnecessary reflected waves. There is.

然るにこのような弾性表面波フイルタ素子にお
いては塗りつぶし電極7の側縁部71が弾性表面
波伝播方向とほぼ直交し、弾性表面波が反射して
しまうため、吸音剤層5はこの塗りつぶし電極7
の側縁部71を覆うよう、かつ弾性表面波伝播方
向に斜交する側縁51を有するように形成されて
いる。この場合吸音剤層5の塗布工程のばらつき
により第2図に拡大して示すように、塗りつぶし
電極7の側縁部71の吸音剤層5が塗布されてい
ない部分7aの量が大きくばらつくことになり、
塗布されていない部分7aの量が大きいと、入射
弾性表面波がこの側縁部7aで反射され第3図の
ような周波数と相対レベルで示す弾性表面波フイ
ルタ素子のフイルタ特性曲線8の頂点にリツプル
1が発生し、特性を劣化する原因となつていた。
However, in such a surface acoustic wave filter element, the side edge 71 of the filled electrode 7 is almost perpendicular to the surface acoustic wave propagation direction, and the surface acoustic wave is reflected.
It is formed to have a side edge 5 1 that covers the side edge 7 1 of and obliquely intersects with the surface acoustic wave propagation direction. In this case, due to variations in the coating process of the sound absorbing material layer 5, as shown in an enlarged view in FIG . become,
When the amount of the uncoated portion 7a is large, the incident surface acoustic wave is reflected by this side edge 7a and reaches the peak of the filter characteristic curve 8 of the surface acoustic wave filter element shown in terms of frequency and relative level as shown in FIG. Ripples 81 were generated, which caused deterioration of characteristics.

本発明は前述した問題点に鑑みなされたもので
あり、吸音剤層の位置精度がわるくとも、塗りつ
ぶし電極の側縁部から反射波を発生させることが
ない弾性表面波フイルタ素子を提供することを目
的としている。
The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a surface acoustic wave filter element that does not generate reflected waves from the side edges of filled electrodes, even if the positional accuracy of the sound absorbing material layer is poor. The purpose is

次に本発明の弾性表面波フイルタ素子の一実施
例を第4図及び第5図により説明する。
Next, one embodiment of the surface acoustic wave filter element of the present invention will be described with reference to FIGS. 4 and 5.

即ち、LiTaO3,LiNbO3、水晶、セラミツク
スなどからなる圧電基板11上に電気信号を弾性
表面波に変換するための入力IDT12と、この入
力IDT12にシールド電極13を介して所定距離
をもつて配設された弾性表面波を電気信号に変換
する出力IDT14及び圧電基板11の弾性表面波
伝播方向の端部近傍に設けられた吸音剤層15を
具備しており、出力IDT14の交叉幅を一定に
し、入力IDT12は交叉幅及びピツチを変える、
いわゆるアポダイズ形IDTで形成し、この入力
IDT12の交叉していない部分には弾性表面波の
位相づれを補償するためのダミー電極16が設け
られているが、出力IDT14と反対方向に進む弾
性表面波は信号伝搬には寄与しないので位相補償
が必要なく、通常重み付けの最大幅の近傍より出
力IDT14と反対方向に交叉部を除き導電部材に
より塗りつぶし、いわゆる塗りつぶし電極17と
しているのはほぼ従来の弾性表面波フイルタ素子
と同様であるが、実施例においては、この塗りつ
ぶし電極17を圧電基板11の端部近傍まで延長
し、この塗りつぶし電極17の側縁部171及び
対設部172の一部を覆うように吸音剤層15を
設けたことを特徴としている。
That is, on a piezoelectric substrate 11 made of LiTaO 3 , LiNbO 3 , crystal, ceramics, etc., there is an input IDT 12 for converting an electric signal into a surface acoustic wave, and an input IDT 12 is arranged at a predetermined distance from this input IDT 12 via a shield electrode 13 . It is equipped with an output IDT 14 that converts the provided surface acoustic waves into an electric signal, and a sound absorbing material layer 15 provided near the end of the piezoelectric substrate 11 in the surface acoustic wave propagation direction, so that the intersection width of the output IDT 14 is kept constant. , input IDT12 changes the crossover width and pitch,
Formed with so-called apodized IDT, this input
A dummy electrode 16 is provided in the non-intersecting part of the IDT 12 to compensate for the phase shift of the surface acoustic waves, but since the surface acoustic waves traveling in the opposite direction to the output IDT 14 do not contribute to signal propagation, the phase is compensated. It is almost the same as a conventional surface acoustic wave filter element, but the crossing part is filled with a conductive material in the opposite direction to the output IDT 14 from the vicinity of the maximum width of normal weighting, and is filled with a conductive material to form a so-called fill electrode 17. In the example, the fill electrode 17 is extended to the vicinity of the end of the piezoelectric substrate 11, and the sound absorbing material layer 15 is provided so as to cover a part of the side edge 17 1 and opposing portion 17 2 of the fill electrode 17. It is characterized by

このような構造にすることにより、塗りつぶし
電極17の側縁部171は吸音剤層15の塗布工
程のばらつきによつても必ず吸音剤層15内に完
全に入ることになり、従来のように塗りつぶし電
極7の側縁部71の露出部7aは皆無となり、側
縁部171による反射波を防止することが出来る
ので、第5図の周波数と相対レベルで示す弾性表
面波フイルタ素子のフイルタ特性曲線18の頂部
は平らになり極めてフイルタ特性が良好になつ
た。
With this structure, the side edge 171 of the fill-in electrode 17 always completely enters the sound-absorbing material layer 15 even if there are variations in the coating process of the sound-absorbing material layer 15, unlike the conventional method. The exposed portion 7a of the side edge 71 of the fill-in electrode 7 is completely eliminated, and reflected waves from the side edge 171 can be prevented, so that the filter of the surface acoustic wave filter element shown in frequency and relative level in FIG. The top of the characteristic curve 18 became flat, and the filter characteristics became extremely good.

次に本発明の他の実施例を第6図に示す。図中
前の実施例と同一符号は同一部分を示し特に説明
しない。
Next, another embodiment of the present invention is shown in FIG. In the figures, the same reference numerals as in the previous embodiment indicate the same parts and will not be particularly described.

即ち、本実施例においては、塗りつぶし電極が
圧電基板11の端部近傍まで延長されているのは
ほぼ同様であるが、この塗りつぶし電極17の側
縁部171と対設部172が共に弾性表面波伝播方
向に斜交するように設けられており、前の実施例
よりも更に反射波を完全に防止することが可能と
なる。これは対設部172のみを斜交するように
してもよい。
That is, in this embodiment, the filling electrode extends to the vicinity of the end of the piezoelectric substrate 11, but the side edge 17 1 and opposing portion 17 2 of the filling electrode 17 are both elastic. It is provided obliquely to the surface wave propagation direction, making it possible to more completely prevent reflected waves than in the previous embodiment. This may be done so that only the opposing portions 17 2 intersect obliquely.

上述のように本発明の弾性表面波フイルタは塗
りつぶし電極の側縁部を必ず吸音剤層で覆うこと
が可能となり、この塗りつぶし電極の側縁部から
の反射波による特性劣化を防止し得る効果があ
り、その特性の向上が期待出来る。特に圧電基板
としてLiNbO3のように電気機械結合係数が大き
いものを使用した時その効果は顕著である。
As described above, the surface acoustic wave filter of the present invention makes it possible to always cover the side edges of the filled electrode with a sound absorbing layer, and has the effect of preventing characteristic deterioration due to waves reflected from the side edges of the filled electrode. It is expected that the characteristics will improve. The effect is particularly remarkable when a material with a large electromechanical coupling coefficient, such as LiNbO 3 , is used as the piezoelectric substrate.

【図面の簡単な説明】[Brief explanation of drawings]

第1図乃至第3図は従来の弾性表面波フイルタ
素子の一例を示す図であり、第1図は平面図、第
2図は第1図のA部拡大図、第3図は周波数特性
図、第4図及び第5図は本発明の弾性表面波フイ
ルタ素子の一実施例を示す図であり、第4図は平
面図、第5図は周波数特性図、第6図は本発明の
弾性表面波フイルタ素子の他の実施例を示す平面
図である。 1,11…圧電基板、2,12…インターデジ
タル形入力トランスデユーサ、3,13…シール
ド電極、4,14…インターデジタル形出力トラ
ンスデユーサ、5,15…吸音剤層、6,16…
ダミー電極、7,17…塗りつぶし電極。
Figures 1 to 3 are diagrams showing an example of a conventional surface acoustic wave filter element, in which Figure 1 is a plan view, Figure 2 is an enlarged view of section A in Figure 1, and Figure 3 is a frequency characteristic diagram. , FIG. 4 and FIG. 5 are diagrams showing one embodiment of the surface acoustic wave filter element of the present invention, in which FIG. 4 is a plan view, FIG. 5 is a frequency characteristic diagram, and FIG. 6 is a diagram showing the elasticity of the present invention. FIG. 7 is a plan view showing another example of the surface wave filter element. DESCRIPTION OF SYMBOLS 1, 11... Piezoelectric substrate, 2, 12... Interdigital type input transducer, 3, 13... Shield electrode, 4, 14... Interdigital type output transducer, 5, 15... Sound absorbing material layer, 6, 16...
Dummy electrode, 7, 17... Filled electrode.

Claims (1)

【特許請求の範囲】 1 圧電基板と、 この圧電基板上に設けられたインターデジタル
形を有する入力トランスデユーサと、 この入力トランスデユーサに対向し、かつ前記
圧電基板上に設けられたインターデジタル形を有
する出力トランスデユーサとを備え、 前記入力トランスデユーサと前記出力トランス
デユーサとの少なくとも一方が交叉部の幅を変化
することにより重み付けがなされた弾性表面波フ
イルタ素子において、 前記重み付けがなされたトランスデユーサの前
記交叉部を除き導電部材で塗りつぶしてなる塗り
つぶし電極は、前記交叉部端部より前記圧電基板
の端部近傍まで延長されてなり、かつ少なくとも
弾性表面波伝播方向とほぼ直行する前記塗りつぶ
し電極の側縁部には吸音剤層が被覆されているこ
とを特徴とする弾性表面波フイルタ素子。
[Claims] 1. A piezoelectric substrate, an input transducer having an interdigital type provided on the piezoelectric substrate, and an interdigital type input transducer provided on the piezoelectric substrate and facing the input transducer. a surface acoustic wave filter element comprising: an output transducer having a shape, wherein at least one of the input transducer and the output transducer is weighted by changing the width of an intersection part; The filled electrode, which is formed by filling the cross section of the transducer with a conductive material except for the cross section, extends from the end of the cross section to near the end of the piezoelectric substrate, and extends at least substantially perpendicular to the surface acoustic wave propagation direction. A surface acoustic wave filter element characterized in that a side edge of the filled electrode is coated with a sound absorbing layer.
JP7076381A 1981-05-13 1981-05-13 Surface acoustic wave filter element Granted JPS57186820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7076381A JPS57186820A (en) 1981-05-13 1981-05-13 Surface acoustic wave filter element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7076381A JPS57186820A (en) 1981-05-13 1981-05-13 Surface acoustic wave filter element

Publications (2)

Publication Number Publication Date
JPS57186820A JPS57186820A (en) 1982-11-17
JPH0119291B2 true JPH0119291B2 (en) 1989-04-11

Family

ID=13440868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7076381A Granted JPS57186820A (en) 1981-05-13 1981-05-13 Surface acoustic wave filter element

Country Status (1)

Country Link
JP (1) JPS57186820A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333557A (en) * 1976-08-24 1978-03-29 Toshiba Corp Elastic surface wave element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333557A (en) * 1976-08-24 1978-03-29 Toshiba Corp Elastic surface wave element

Also Published As

Publication number Publication date
JPS57186820A (en) 1982-11-17

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