JPH01188492A - Vapor phase synthesis device - Google Patents

Vapor phase synthesis device

Info

Publication number
JPH01188492A
JPH01188492A JP853188A JP853188A JPH01188492A JP H01188492 A JPH01188492 A JP H01188492A JP 853188 A JP853188 A JP 853188A JP 853188 A JP853188 A JP 853188A JP H01188492 A JPH01188492 A JP H01188492A
Authority
JP
Japan
Prior art keywords
base body
crystal
vapor phase
phase synthesis
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP853188A
Other languages
Japanese (ja)
Inventor
Motoharu Kikuchi
菊池 茂登治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP853188A priority Critical patent/JPH01188492A/en
Publication of JPH01188492A publication Critical patent/JPH01188492A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To directly grow a crystal body suitable for cutting out a stock for a condenser lens for large output, etc., by disposing a raw material supply nozzle in a specific form and synthesizing a circular columnar crystal body in a vapor phase. CONSTITUTION:The circular columnar crystal body, for example, ZnSe crystal body, is prepared in the following manner: A hollow cylindrical base body which is closed at one end and has a round bar at the center is supported at the center of a reaction chamber by a revolving shaft. Nozzles for supplying gaseous H2Se and a Zn vapor-contg. carrier gas are oppositely disposed to the open end of this base body and if necessary, a flat plate base body is placed around this base body and is heated by a heater provided on the outside of the reaction chamber to the crystal growth temp. Since the inside of the hollow cylindrical base body is blown directly with the gaseous raw materials from the supply nozzles, the crystal growth speed is extremely higher than the crystal growth speed of the outside. The vapor growth is ended in the stage when the crystals deposit successively in this base body and the inside of the base body is completely filled therewith. The deposition of the crystals is uniformized by rotating the base body.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、中央に貫通孔を有する集光レンズ等の素材の
切り出しに適した円柱状結晶体を基体上に堆積する気相
合成装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a vapor phase synthesis apparatus for depositing a cylindrical crystal body on a substrate, which is suitable for cutting out a material such as a condenser lens having a through hole in the center. .

(従来の技術) 近年、レーザ光の用途は急激に拡大しつつあり、その中
でも、溶接、切断、熱処理等に用いられるレーザ加工機
は、大出力のものが要望されている。例えば、鉄鋼圧延
ラインへの利用などのように、熱容量の大きい被加工物
を対象とする場合には、特に大出力のレーザ加工機が必
要となる。5kW以−Lの大出力のレーザを用いる場合
には、一般に不安定型共振器が用いられる。
(Prior Art) In recent years, the uses of laser light have been rapidly expanding, and among these, there is a demand for high output laser processing machines used for welding, cutting, heat treatment, etc. For example, when a workpiece with a large heat capacity is to be processed, such as when used in a steel rolling line, a particularly high-output laser processing machine is required. When using a laser with a large output of 5 kW or more, an unstable resonator is generally used.

この不安定型共振器を用いるレーザ光のエネルギープロ
ファイルは、レーザ発振器近傍ではリングモードである
。しかし、レーザ発振器から十分離れた位置では、光の
回折効果とレーザ光の取り出し窓の熱レンズ効果とによ
って、エネルギープロファイルは中心部に集中したモー
ドになる。このため、集光レンズの中心部に大きな熱負
荷が加わり、集光レンズがしばしば破壊した。 このよ
うな問題を解消するために、中央部に貫通孔を有する集
光レンズが用いられる。   ” このような集光レンズの素材としては、例えば、Zn5
e結晶体が用いられる。集光レンズは、気相合成法によ
り基板上に堆積した結晶体から板状結晶体を取り出し、
円形にくり抜いて、外周及び両面の研削を施した後ラッ
ピング、ポリッシングを行い、さらに所定の形状に仕上
げて用いられる。気相合成法に用いる装置としては、縦
型と横型がある。
The energy profile of laser light using this unstable resonator is a ring mode near the laser oscillator. However, at a position sufficiently far away from the laser oscillator, the energy profile becomes a mode concentrated in the center due to the light diffraction effect and the thermal lens effect of the laser light extraction window. For this reason, a large thermal load was applied to the center of the condenser lens, and the condenser lens was often destroyed. In order to solve this problem, a condensing lens having a through hole in the center is used. ” Examples of materials for such condensing lenses include Zn5.
e crystals are used. The condensing lens extracts a plate-shaped crystal from a crystal deposited on a substrate using the vapor phase synthesis method.
It is hollowed out into a circular shape, the outer periphery and both sides are ground, then lapped and polished, and then finished into a predetermined shape for use. There are two types of equipment used for vapor phase synthesis: vertical and horizontal.

第2図は従来の縦型気相合成装置の概念図である。反応
室の中には基板を配置し、外側よりヒータで結晶成長温
度に加熱する。基板の近(に開口を有する上向きの2つ
のノズルから、不活性ガス等のキャリアガスにより運ば
れる Zn蒸気とH,Seガスとを別々に供給して気相
合成し、基板上にZn5e結晶を堆積する。第3図はZ
n5e結晶を堆積した基板の断面図である。第3図(A
)は4枚の基板を、第3図(B)は6枚の基板を、それ
ぞれの端部で接合して基板断1面形状を矩形若しくは6
角形の筒状にすることにより、結晶の堆積する面積を増
大させたものである。これらの板状Zn5e結晶体は、
基板から取り外して一枚の平板とする。次いで、第4図
のようにこの平板から円形素材をくり抜き、第5図のよ
うな貫通孔を開け、さらに光学部品とするために所定形
状に加工、研磨される。
FIG. 2 is a conceptual diagram of a conventional vertical vapor phase synthesis apparatus. A substrate is placed inside the reaction chamber and heated from the outside to a crystal growth temperature using a heater. Zn vapor carried by a carrier gas such as an inert gas and H, Se gas are separately supplied from two upward nozzles with openings near the substrate for vapor phase synthesis to form Zn5e crystals on the substrate. Deposits.Figure 3 shows Z
FIG. 2 is a cross-sectional view of a substrate on which n5e crystals are deposited. Figure 3 (A
) are four substrates, and FIG.
The area on which crystals are deposited is increased by making it into a rectangular cylindrical shape. These plate-shaped Zn5e crystals are
Remove it from the board and make it into a single flat plate. Next, a circular material is cut out from this flat plate as shown in FIG. 4, a through hole is made as shown in FIG. 5, and the material is processed and polished into a predetermined shape to form an optical component.

(発明が解決しようとする課題) このように、従来の気相合成装置を用いて平板結晶体を
成長させ、それから円形素材をくり抜き、貫通孔を開け
ることにより、集光レンズを作るときには、必ず円と円
の間や貫通孔の、使えない部分ができるために、投入す
る原料に対する歩留にも限界があった。
(Problem to be Solved by the Invention) As described above, when making a condensing lens by growing a flat crystal using a conventional vapor phase synthesis apparatus, then cutting out a circular material and making a through hole, it is necessary to The production of unusable parts between the circles and through-holes also limited the yield of the input raw materials.

そこで、本発明は、上記問題点を解消して、大出力用の
集光レンズ等の素材を切り出すのに適した、中央に貫通
孔を有する円柱状結晶体を、気相合成工程で直接成長さ
せる装置を提供しようとするものである。
Therefore, the present invention solves the above problems by directly growing a cylindrical crystal body with a through hole in the center using a vapor phase synthesis process, which is suitable for cutting out materials for high-output condensing lenses, etc. The aim is to provide a device that allows

(課題を解決するための手段) 本発明は、中央に貫通孔を有する円形素材を採取するの
に適した円柱状結晶体を気相合成する装置において、一
方の端部を閉じ、中央に丸棒状基体を配置した中空円筒
状基体を用い、該基体は円筒部の内径を円形素材の直径
に、また、丸棒部の外径を円形素材の貫通孔の外径にそ
れぞれ対応させ、該基体の開口端部に対向するように原
料ガス供給ノズルを配置したことを特徴とする気相合成
装置である。
(Means for Solving the Problems) The present invention provides an apparatus for vapor phase synthesis of a cylindrical crystal body suitable for collecting a circular material having a through hole in the center. A hollow cylindrical base on which a rod-shaped base is arranged is used, and the inner diameter of the cylindrical part of the base corresponds to the diameter of the circular material, and the outer diameter of the round bar part corresponds to the outer diameter of the through hole of the circular material. This is a vapor phase synthesis apparatus characterized in that a raw material gas supply nozzle is arranged so as to face the open end of the gas phase synthesis apparatus.

なお、基体上に均一に結晶を堆積するために、中空円筒
状基体を回転することが好ましい。また、中空円筒状基
体の内側に吹き込まれる原料ガスは、いずれオーバフロ
ーして該基体の外側を通り排気系に出るところかう、該
基体の外側にも結晶が堆積する。そこで、結晶の回収率
を高めるために該基体の周囲に平板状基体を配置するこ
ともできる。
Note that in order to uniformly deposit crystals on the substrate, it is preferable to rotate the hollow cylindrical substrate. Furthermore, the raw material gas blown into the inside of the hollow cylindrical base eventually overflows and exits the exhaust system through the outside of the base, and crystals are deposited on the outside of the base as well. Therefore, a flat substrate may be placed around the substrate in order to increase the recovery rate of crystals.

また、高出力用集光レンズのように最終的に採取する形
状が中央に貫通孔を有する円形素材の場合は、素材の直
径より中空円筒状基体の内径を若干大きめに、また、貫
通孔の直径より丸棒状基体の外径を若干小さめに設計す
れば、該基体内部に成長した円柱状結晶体をスライスし
て僅かに円周側面を加工研磨することにより、所定寸法
の外径と貫通孔直径を有する円形素材を製造することが
できる。
In addition, if the final shape to be collected is a circular material with a through hole in the center, such as a high-power condensing lens, the inner diameter of the hollow cylindrical base should be slightly larger than the diameter of the material, and the through hole should be If the outer diameter of the round rod-shaped base is designed to be slightly smaller than the diameter, by slicing the cylindrical crystal that has grown inside the base and slightly processing and polishing the circumferential side, the outer diameter and through hole of the predetermined dimensions can be obtained. Circular blanks with a diameter can be produced.

なお、中央に丸棒を有する中空円筒状基体は、カーボン
などにより容易に形成することができる。
Note that the hollow cylindrical base having a round rod in the center can be easily formed from carbon or the like.

(作用) 第1図は、本発明の1具体例である気相合成装置の概念
図である。Zn5e結晶体の作成を例にして、以下説明
する。
(Function) FIG. 1 is a conceptual diagram of a vapor phase synthesis apparatus that is a specific example of the present invention. The following description will be made using the creation of a Zn5e crystal as an example.

一方の端部を閉じ中央に丸棒を有する中空円筒状基体を
、回転軸により反応室中央に支、持し、該基体の開放端
にH,SeガスとZn蒸気含有キャリアガス供給ノズル
を対向して配置し、必要に応じて、該基体の周囲に平板
状基体を置き、反応室の外側に設けたヒータにより結晶
成長温度に加熱する。
A hollow cylindrical substrate with one end closed and a round bar in the center is supported in the center of the reaction chamber by a rotating shaft, and a carrier gas supply nozzle containing H, Se gas and Zn vapor is opposed to the open end of the substrate. If necessary, a flat substrate is placed around the substrate and heated to a crystal growth temperature by a heater provided outside the reaction chamber.

中空円筒状基体内部は、供給ノズルから直接原料ガスが
吹き付けられるので、結晶成長速度は外部と比較して極
めて大きい。該基体内部に結晶が順次堆積して埋めつく
した段階で気相合成を終了する。この結晶の堆積は該基
体を回転することにより均一化を図ることができる。な
お、円筒状基体の外側及び平板状基体の表面にも図のよ
うに結晶が成長する。
Since the raw material gas is directly blown into the inside of the hollow cylindrical substrate from the supply nozzle, the crystal growth rate is extremely high compared to the outside. The vapor phase synthesis is terminated at the stage when crystals are sequentially deposited and completely filled inside the substrate. This crystal deposition can be made uniform by rotating the substrate. Note that crystals also grow on the outside of the cylindrical substrate and on the surface of the flat substrate as shown in the figure.

中空円筒状基体から外した、貫通孔を有する円柱状結晶
体は、適当な厚さにスライスすることにより、貫通孔を
有する集光レンズなどの円形素材としてそのまま使用す
ることができる。
By slicing the cylindrical crystal body having a through hole and removing it from the hollow cylindrical substrate to an appropriate thickness, it can be used as it is as a circular material for a condenser lens having a through hole.

このように本発明の気相合成装置は、所定直径の貫通孔
と所定の外径を有する円柱状結晶体を直接作成すること
ができるので、結晶体の歩留まりが飛躍的に向上し、そ
の後の光学部品等の作成のための機械加工が大幅に簡略
化することができた。
In this way, the vapor phase synthesis apparatus of the present invention can directly create a cylindrical crystal body having a through hole of a predetermined diameter and a predetermined outer diameter, so the yield of the crystal body is dramatically improved, and subsequent Machining for creating optical parts etc. could be greatly simplified.

なお、第1図には縦型の気相合成装置を示したが、横型
にしても同様に実施することができる。また、Zn5e
以外の結晶体についても同様に気相合成することができ
る。
Although a vertical type vapor phase synthesis apparatus is shown in FIG. 1, a horizontal type can also be used. Also, Zn5e
Other crystals can be similarly synthesized in a vapor phase.

(実施例) 第1図の気相合成装置を用いてZn5e結晶体を作成し
た。中空円筒状基体は内径を80mm、深さを100I
とし、内部の丸棒は外径を7mm 、長さを100Mと
したカーボン製の基体である。H,Seガスの流量は0
.5ON 1 / 1llin。
(Example) A Zn5e crystal was produced using the vapor phase synthesis apparatus shown in FIG. The hollow cylindrical base has an inner diameter of 80mm and a depth of 100I.
The inner round rod is a carbon base with an outer diameter of 7 mm and a length of 100 m. The flow rate of H, Se gas is 0
.. 5ON 1/1llin.

Zn蒸気含有キャリアガスの流量は0.25N1/ll
1inとし、合成圧力は40T orrとした。また、
基体は周囲のヒータにより750℃に加熱され、回転速
度を3rpmとして400時間気相合成を続けた。その
後、中空円筒状基体から結晶体を取り外して、中央に直
径1mの貫通孔を有し、直径80I111.高さ約10
0鵬9重量約2600gの円柱状結晶体を得た。
The flow rate of carrier gas containing Zn vapor is 0.25N1/ll.
1 inch, and the combined pressure was 40 Torr. Also,
The substrate was heated to 750° C. by a surrounding heater, and the gas phase synthesis was continued for 400 hours at a rotation speed of 3 rpm. Thereafter, the crystal body was removed from the hollow cylindrical base, and a through hole with a diameter of 1 m was formed in the center. Height approx. 10
A cylindrical crystal body weighing about 2,600 g was obtained.

(発明の効果) 本発明は、上記構成を採用することにより、所定直径の
貫通孔及び所定外径を有する均一な円柱状結晶体を効率
的に製造することを可能とし、得られた結晶体をスライ
スすることにより、そのまま円形素材を提供することが
でき、結晶体の歩留まりを飛躍的に向上させ、かつ、貫
通孔を有する円形素材の作成について機械加工を大幅に
簡略化することができ、製造時間の短縮に大きく寄与す
るものである。
(Effects of the Invention) By adopting the above configuration, the present invention makes it possible to efficiently produce a uniform cylindrical crystal body having a through hole of a predetermined diameter and a predetermined outer diameter, and the obtained crystal body By slicing, it is possible to provide a circular material as is, dramatically improving the yield of crystals, and greatly simplifying the machining required to create a circular material with through holes. This greatly contributes to shortening manufacturing time.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の1具体例である気相合成装置の概念図
、第2図は従来の気相合成装置の概念図、第3図(A)
及び(B)は従来装置の基体の断面図、第4図は平板状
結晶体から円板状素材をくり抜く工程を説明するための
図、第5図は高出力レーザー用集光レンズの1例を示す
図で、(A)は正面図、(B)は平面図である。 第1図 カス   ↑ An落気 第21 (A)  第3図 (B) 第4図 (A)
Fig. 1 is a conceptual diagram of a vapor phase synthesis apparatus which is a specific example of the present invention, Fig. 2 is a conceptual diagram of a conventional vapor phase synthesis apparatus, and Fig. 3 (A).
and (B) are cross-sectional views of the base of the conventional device, Figure 4 is a diagram for explaining the process of hollowing out a disk-shaped material from a flat crystal, and Figure 5 is an example of a condensing lens for high-power lasers. , in which (A) is a front view and (B) is a plan view. Figure 1 Kass ↑ An falling air 21 (A) Figure 3 (B) Figure 4 (A)

Claims (1)

【特許請求の範囲】[Claims] 中央に貫通孔を有する円形素材を採取するのに適した円
柱状結晶体を気相合成する装置において、一方の端部を
閉じ、中央に丸棒状基体を配置した中空円筒状基体を用
い、該基体は円筒部の内径を円形素材の直径に、また、
丸棒部の外径を円形素材の貫通孔の外径にそれぞれ対応
させ、該基体の開口端部に対向するように原料ガス供給
ノズルを配置したことを特徴とする気相合成装置。
In an apparatus for vapor phase synthesis of a cylindrical crystal body suitable for collecting a circular material having a through hole in the center, a hollow cylindrical substrate with one end closed and a round bar-shaped substrate placed in the center is used. The base body has the inner diameter of the cylindrical part equal to the diameter of the circular material, and
A vapor phase synthesis apparatus characterized in that the outer diameter of the round bar portion corresponds to the outer diameter of the through hole of the circular material, and a raw material gas supply nozzle is arranged so as to face the open end of the base.
JP853188A 1988-01-20 1988-01-20 Vapor phase synthesis device Pending JPH01188492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP853188A JPH01188492A (en) 1988-01-20 1988-01-20 Vapor phase synthesis device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP853188A JPH01188492A (en) 1988-01-20 1988-01-20 Vapor phase synthesis device

Publications (1)

Publication Number Publication Date
JPH01188492A true JPH01188492A (en) 1989-07-27

Family

ID=11695732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP853188A Pending JPH01188492A (en) 1988-01-20 1988-01-20 Vapor phase synthesis device

Country Status (1)

Country Link
JP (1) JPH01188492A (en)

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