JPH01184010A - Filter - Google Patents
FilterInfo
- Publication number
- JPH01184010A JPH01184010A JP468788A JP468788A JPH01184010A JP H01184010 A JPH01184010 A JP H01184010A JP 468788 A JP468788 A JP 468788A JP 468788 A JP468788 A JP 468788A JP H01184010 A JPH01184010 A JP H01184010A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- filter
- sic particles
- thickness
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052681 coesite Inorganic materials 0.000 abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 10
- 239000000377 silicon dioxide Substances 0.000 abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract 1
- 238000001914 filtration Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010003497 Asphyxia Diseases 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 産・・上のセ 。[Detailed description of the invention] Product: Upper section.
この発明は、気体の口過になどに用いることができるＳ
ｉＣフィルターの製造方法に関する。This invention can be used for suffocation of gas, etc.
The present invention relates to a method for manufacturing an iC filter.
慢」ヒ１韮」［
フィルターは、たとえば半導体の製造工程で使用される
クリーンルームで塵埃を除去するだめに用いる。Filters are used, for example, to remove dust in clean rooms used in semiconductor manufacturing processes.
０が ゛しよ とするμ 、
ところで、クリーンルームで使用されるフィルターは、
有殿系の気孔径の小さいものが使用されているが、捕集
された塵埃はフィルター層表面に凝集し、ある程度大ぎ
くなるとフィルターから剥れ落ち、クリーンルーム内を
再汚染する問題があった。By the way, the filters used in clean rooms are:
A filter with small pores is used, but the collected dust aggregates on the surface of the filter layer, and when it becomes too large, it falls off the filter and recontaminates the inside of the clean room.
また、ＳｉＣは粒子内に不純物をとり込んでおり、高温
になると不純物がＳｉＣ粒子の外に移動し、雰囲気を汚
染する問題があった。Further, SiC has impurities incorporated into its particles, and when the temperature rises, the impurities move outside the SiC particles, causing a problem of contaminating the atmosphere.
ＬＬＩ−丘
この発明は上述の問題点を解消し、気体の口過の際に捕
集された塵埃が凝集しない耐久性の優れたフィルターを
提供することを目的とする。LLI-Hill It is an object of the present invention to solve the above-mentioned problems and to provide a highly durable filter in which dust collected during gas passage does not aggregate.
元」しλ１」Ｌ この発明は特許請求の範囲を要旨としている。Yuan”shiλ1”L The invention is summarized in the claims.
ｑｌｌ、を °するための手。A hand for qll.
この発明のフィルターを構成するＳｉＣ粒子はマトリッ
クスとなっている。このＳｉＣ粒子の粒界部分を除＜Ｓ
ｉ Ｃ粒子のほぼ全表面に５００オングストローム〜５
０μＩの５ｉ０２ＦＪを設ける。The SiC particles constituting the filter of this invention serve as a matrix. Excluding the grain boundary part of this SiC particle <S
500 angstroms to 5 on almost the entire surface of the iC particle
Provide 5i02FJ of 0 μI.
ＳｉＯ２膜の膜厚が５００オングストロームより小さい
と、ＳｉＣ粒子から移動する不純物をトラップする効果
がなく、好ましくない。また膜厚が５０μｍより大きい
と、３ｉＣ粒子とＳｉＯ２膜の膨脹差から剥離しやすく
なるので好ましくない。If the thickness of the SiO2 film is less than 500 angstroms, it will not be effective in trapping impurities moving from SiC particles, which is undesirable. Moreover, if the film thickness is larger than 50 μm, it is not preferable because the 3iC particles and the SiO2 film tend to peel off due to the difference in expansion.
このようなフィルターは次のようにして作る。Create such a filter as follows.
まずＳｉＣ焼結体を得て、ＳｉＣ焼結体の全体すなわち
外周部から内周部まですべての構成ＳｉＣ粒子に対して
酸化雰囲気において熱処理する。この熱処理時間を調整
することにより全ＳｉＣ粒子の表面に所定厚みのＳｉＯ
２膜を形成する。First, a SiC sintered body is obtained, and the entire SiC sintered body, that is, all constituent SiC particles from the outer periphery to the inner periphery, are heat-treated in an oxidizing atmosphere. By adjusting this heat treatment time, a predetermined thickness of SiO is formed on the surface of all SiC particles.
2 films are formed.
見１ま
たとえば一端を開放したフィルターは、ＳｉＣ焼結体で
ある。ＳｉＣ焼結体のＳＩＣ粒子はマトリックスを構成
している。これらのＳｉＣ粒子の粒界部分を除＜Ｓｉ
Ｃ粒子のほぼ全表面にはたとえば５０００オンゲス１−
ロームのＳｉＯ２膜が形成されている。この５ｉ０ｚＢ
’）の存在により、高温で使用し−（ＳＩＧ粒子内部に
存在する不純物が移動しても、高ＩＴＩ度のＳｉＯ２膜
でトラップされるのでＳｉＣ粒子から不純物が出ること
がなく雰囲気を汚染することがない。For example, a filter with one end open is a SiC sintered body. SIC particles of the SiC sintered body constitute a matrix. Except for the grain boundary portion of these SiC particles, <Si
For example, 5000 Å on almost the entire surface of the C particle.
A ROHM SiO2 film is formed. This 5i0zB
Due to the presence of the SiC particles, even if the impurities inside the SIG particles move, they will be trapped by the SiO2 film with a high ITI degree, so the impurities will not come out from the SiC particles and contaminate the atmosphere. There is no.
この実施例のフィルターは、すべての３ｉＣ粒子に対し
て酸化雰囲気においてたとえば１０００℃で熱処理する
ことによって得られる。１０００℃１時間熱処理をする
ことにより１００オングストロームのＳｉＯ２膜を形成
可能である。この熱処理時間を変化させることにより、
ＳｉＣ粒子表面に生成する３ｉ０２ＩｌＩＪを自由に設
定できる。The filter of this example is obtained by heat treating all 3iC particles at, for example, 1000° C. in an oxidizing atmosphere. A 100 angstrom SiO2 film can be formed by heat treatment at 1000° C. for 1 hour. By changing this heat treatment time,
3i02IlIJ generated on the SiC particle surface can be freely set.
ところでこの発明は上述のフィルター形状に限るもので
はない。However, the present invention is not limited to the above-described filter shape.
１１悲１１
この発明によれば全ＳｉＣ粒子がＳｉＯ２膜で保護され
るので、Ｓ ｉ Ｃ粒子内に含まれる不純物が高温にな
っても粒子の外に放出されることがなく、安定して口過
を行うことができる。11 Tragedy 11 According to this invention, all SiC particles are protected by a SiO2 film, so impurities contained within the SiC particles are not released outside the particles even at high temperatures, and they are stably ingested. You can do the following.
＼\
Claims (1)
粒界部分を除くＳｉＣ粒子のほぼ全表面に５００オング
ストローム〜５０μｍの厚みのＳｉＯ＿２膜を設けたこ
とを特徴とするフィルター。In a filter using SiC particles as a matrix,
A filter characterized in that a SiO_2 film with a thickness of 500 angstroms to 50 μm is provided on almost the entire surface of SiC particles except for grain boundary areas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63004687A JP2545257B2 (en) | 1988-01-14 | 1988-01-14 | Filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63004687A JP2545257B2 (en) | 1988-01-14 | 1988-01-14 | Filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01184010A true JPH01184010A (en) | 1989-07-21 |
| JP2545257B2 JP2545257B2 (en) | 1996-10-16 |
Family
ID=11590806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63004687A Expired - Fee Related JP2545257B2 (en) | 1988-01-14 | 1988-01-14 | Filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2545257B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013145245A1 (en) * | 2012-03-29 | 2013-10-03 | イビデン株式会社 | Honeycomb structure, honeycomb filter for exhaust gas purification, and exhaust gas purification device |
| EP2853303A4 (en) * | 2012-05-21 | 2016-03-02 | Ibiden Co Ltd | Honeycomb filter, exhaust gas purification device, and exhaust gas purification method |
-
1988
- 1988-01-14 JP JP63004687A patent/JP2545257B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013145245A1 (en) * | 2012-03-29 | 2013-10-03 | イビデン株式会社 | Honeycomb structure, honeycomb filter for exhaust gas purification, and exhaust gas purification device |
| JPWO2013145245A1 (en) * | 2012-03-29 | 2015-08-03 | イビデン株式会社 | Honeycomb structure, exhaust gas purification honeycomb filter and exhaust gas purification device |
| EP2853303A4 (en) * | 2012-05-21 | 2016-03-02 | Ibiden Co Ltd | Honeycomb filter, exhaust gas purification device, and exhaust gas purification method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2545257B2 (en) | 1996-10-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
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|
| S531 | Written request for registration of change of domicile |
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|
| R350 | Written notification of registration of transfer |
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| R250 | Receipt of annual fees |
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| R250 | Receipt of annual fees |
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|
| LAPS | Cancellation because of no payment of annual fees | ||
| S111 | Request for change of ownership or part of ownership |
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|
| R371 | Transfer withdrawn |
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| S111 | Request for change of ownership or part of ownership |
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| R350 | Written notification of registration of transfer |
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