JPH01183481A - Production of ceramic superconductor - Google Patents
Production of ceramic superconductorInfo
- Publication number
- JPH01183481A JPH01183481A JP63007687A JP768788A JPH01183481A JP H01183481 A JPH01183481 A JP H01183481A JP 63007687 A JP63007687 A JP 63007687A JP 768788 A JP768788 A JP 768788A JP H01183481 A JPH01183481 A JP H01183481A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- oxygen ion
- pattern
- oxide ceramic
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 25
- 239000000919 ceramic Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 27
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 18
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims description 6
- -1 oxygen ions Chemical class 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 22
- 238000010884 ion-beam technique Methods 0.000 abstract description 19
- 239000010409 thin film Substances 0.000 abstract description 11
- 239000002131 composite material Substances 0.000 abstract description 9
- 238000002513 implantation Methods 0.000 abstract description 6
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical group 0.000 abstract 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003612 virological effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は酸化物セラミックス体超電導体の製造方法に
関し、特に酸化物セラミックス体上に所定のパターンの
超電導体を形成するセラミックス超電導体の製造方法に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for producing an oxide ceramic superconductor, and particularly to a method for producing a ceramic superconductor in which a predetermined pattern of superconductors is formed on an oxide ceramic body. Regarding.
１９８６年にベドノルツらが、Ｌａ−Ｂａ−Ｃｕ−０系
複合酸化物で高い臨界温度（Ｔｃ ）を有する超電導物
質の存在を示して以来、Ｔｃが急速に上昇し、１９８７
年２月には９８ Ｋが記録された。これにより液体窒素
を冷媒とする超電導体の実用化の可能性が出てきた。Since Bednorz et al. showed the existence of a superconducting material with a high critical temperature (Tc) in the form of a La-Ba-Cu-0 complex oxide in 1986, Tc has rapidly increased, and in 1987
In February, 98K was recorded. This opens the possibility of practical application of superconductors using liquid nitrogen as a coolant.
これまでに発見されている高いＴｃをもつ物質としては
、Ｌｎ−Ｍ−Ｃｕ−０系複合酸化物（ただし、ＬｎはＬ
ａ 、Ｎｄ、Ｐｍ、Ｓｍ、 Ｅｕ 、Ｇｄ 、 Ｄｙ、
Ｈｏ 、 Ｅｒ 。Materials with high Tc that have been discovered so far include Ln-M-Cu-0 complex oxides (Ln is L
a, Nd, Pm, Sm, Eu, Gd, Dy,
Ho, Er.
Ｔｍ、Ｙｂ、Ｌｕ、Ｙのうちの少なくとも一糧類９Ｍは
Ｂａ 、 Ｓｒ 、 Ｃａのうちの少なくとも一種類）
が知られており、例えばＬｎＭ２ＣｕｓＯｙ −ｘ な
る組成の複合酸化物の場合０＜Ｘ＜０．６に相当する酸
素濃度において斜方晶構造となり高い臨界温度を示すこ
とが知られている。At least one of Tm, Yb, Lu, and Y (9M is at least one of Ba, Sr, and Ca)
For example, in the case of a composite oxide having the composition LnM2CusOy -x, it is known that at an oxygen concentration corresponding to 0<X<0.6, it becomes an orthorhombic structure and exhibits a high critical temperature.
ＬｎＭ２Ｃｕ３０７−ｘの組成のセラミックス超電導体
を得るために、まずＬｎＭ２Ｃｕ３０７−ｘの複合酸化
物セラミックス体が蒸着、焼結、溶射等の手法で形成さ
れる。このときＸは上記範囲を外れる（ｘ’＞０．６’
）ので次に熱処理を行ってＸを制御し、超電導体化する
ことが行われる。In order to obtain a ceramic superconductor having a composition of LnM2Cu307-x, a composite oxide ceramic body of LnM2Cu307-x is first formed by methods such as vapor deposition, sintering, and thermal spraying. At this time, X is outside the above range (x'>0.6'
), then a heat treatment is performed to control X and make it a superconductor.
しかしながら上述のセラミックス超電導体の製造方法に
２いては複合酸化物セラミックス体の全体を超電導体化
することはできるが、いかなる形状の酸化物セラミック
ス体をも自由に形成できるわけではないので任意の形状
、パターンのセラミックス超電導体を得ることには制約
がある。However, in the method 2 for manufacturing a ceramic superconductor described above, although the entire composite oxide ceramic body can be made into a superconductor, it is not possible to freely form an oxide ceramic body in any shape. However, there are limitations to obtaining patterned ceramic superconductors.
この発明は上述の点に鑑みてなされ、その目的は、酸化
物セラミックス体中の酸素濃度の制御を任意のパターン
で行うことにより、所定の形状。The present invention has been made in view of the above points, and an object thereof is to control the oxygen concentration in an oxide ceramic body in an arbitrary pattern to form a predetermined shape.
パターンのセラミックス超電導体を製造する方法を提供
することにある。An object of the present invention is to provide a method for manufacturing a patterned ceramic superconductor.
上記の目的はこの発明によれば、希土類元素（Ｌｎ ）
とアルカリ土類元素（Ｍ）と銅（Ｃｕ ）とを含み組成
ＬｎＭ２Ｃｕ３０７−１を有する酸化物セラミックス体
に酸素イオンを注入し、前記酸化物セラミ。According to the invention, the above object is achieved by the rare earth element (Ln)
Oxygen ions are implanted into an oxide ceramic body containing an alkaline earth element (M) and copper (Cu) and having a composition LnM2Cu307-1 to produce the oxide ceramic.
クス体上に所定のパターンの超電導体を形成することに
よって達成される。This is achieved by forming a predetermined pattern of superconductors on the glass body.
希土類元素ＬｎとしてはＬａ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ
。Rare earth elements Ln include La, Nd, Pm, Sm, Eu
.
Ｇｄ 、 Ｄｙ 、 Ｈｏ 、 Ｅｒ 、 Ｔｍ 、
Ｙｂ 、 Ｌｕ 、 Ｙ のうちの少なくとも一種類、
アルカリ土類元素ＭとしてはＢａ。Gd, Dy, Ho, Er, Tm,
At least one type of Yb, Lu, Y,
The alkaline earth element M is Ba.
Ｓｒ、Ｃａのうちの少なくとも一種類が選ばれる、Ｘに
ついては０（ｘ（１の範囲の酸化物セラミックス体が使
用される。At least one of Sr and Ca is selected, and for X, an oxide ceramic body in the range of 0(x(1) is used.
酸化物セラミックス体としては薄膜、薄板９円筒、柱状
体等のセラミックス有形物があり、これがｒＩＲｔ、イ
オンビームの被注入体となる。酸化物セラミックス体に
注入する酸素イオンビームとしては、一般のイオン注入
装置の酸素イオン源から発せられるものが用いられる。Examples of oxide ceramic bodies include tangible ceramic bodies such as thin films, thin plates, cylinders, and columnar bodies, which serve as objects to be implanted with rIRt and ion beams. The oxygen ion beam to be implanted into the oxide ceramic body is one emitted from an oxygen ion source of a general ion implantation device.
ＬｎＭ２ＣｕｓＯｙ−ｘの組成を有する酸化物セラミッ
クス体に酸素イオンビームが注入されると、注入された
領域の酸素濃度が増加し、上記組成のＸにつき０（ｘ（
０，６を満足するようになる。結晶構造はこのとき斜方
晶である。このようにして酸素イオンビームの注入部が
超電導体となる。酸素イオンビーム注入は任意パターン
で行えるので、任意の形状、パターンの超電導体が形成
される。When an oxygen ion beam is implanted into an oxide ceramic body having the composition LnM2CusOy-x, the oxygen concentration in the implanted region increases and becomes 0(x(
0.6 will be satisfied. The crystal structure is then orthorhombic. In this way, the oxygen ion beam implanted portion becomes a superconductor. Since oxygen ion beam implantation can be performed in any pattern, a superconductor with any shape or pattern can be formed.
次にこの発明の実施例を１面に基づいて説明する。 Next, an embodiment of the present invention will be described based on one side.
（実施例１）
第１図はこの発明の一実施例を示すもので、注入室７は
真空ポンプ６に実り高真空に排気されている。一方酸素
イオン源１から図示しない引き出し電極で引き出された
酸素イオンビーム１０は、加速電極２に印加された加速
電源３による高電圧によって加速され、マグネシア製の
絶縁基板９上の複合酸化物薄膜８に注入される。酸素イ
オンビームｌＯの通路の途中には、対向する走査電極４
が、互いに直角になるよう二対設置されて七り（図では
一対のみ示す）、走査電源５によって酸素イオンビーム
１０を所定パターンで走査可能である。(Embodiment 1) FIG. 1 shows an embodiment of the present invention, in which an injection chamber 7 is connected to a vacuum pump 6 and evacuated to a high vacuum. On the other hand, an oxygen ion beam 10 extracted from an oxygen ion source 1 by an extraction electrode (not shown) is accelerated by a high voltage from an acceleration power source 3 applied to an acceleration electrode 2, and is accelerated by a composite oxide thin film 8 on an insulating substrate 9 made of magnesia. is injected into. In the middle of the path of the oxygen ion beam 1O, there are opposing scanning electrodes 4.
are installed in two pairs at right angles to each other (only one pair is shown in the figure), and the scanning power source 5 can scan the oxygen ion beam 10 in a predetermined pattern.
複合酸化物薄膜８はＹｒ３ａ ２ Ｃｕ３ ｏ７−ｘ
（０（ｘ （１）が用いられる。この薄膜は）ｔＦマグ
ネトロンスバ。Composite oxide thin film 8 is Yr3a 2 Cu3 o7-x
(0(x (1) is used. This thin film is) tF magnetron bus.
夕装置を用い、スバ、り電力３００Ｗ、ＲＦ周波数１３
．５６ ＭＨｚ 、 Ａｒ圧力２ Ｐａの条件で、ＹＢ
ａ２Ｃｕ３Ｏ７−ｘの組成の酸化物セラミックスをター
ゲットと−して１ ｐｍ厚に形成される。得られた薄膜
のＸは０．８で正方晶である。この薄膜は液体Ｗｆ温度
で超電導を示ざない。Using the evening equipment, the power was 300W and the RF frequency was 13.
．． Under the conditions of 56 MHz and Ar pressure of 2 Pa, YB
It is formed to a thickness of 1 pm using an oxide ceramic having a composition of a2Cu3O7-x as a target. The obtained thin film has an X value of 0.8 and is a tetragonal crystal. This thin film does not exhibit superconductivity at liquid Wf temperatures.
得られた複合酸化物薄膜８に対して酸素イオンビーム１
０が所定パターンで注入される。注入の条件は次の通り
である。Oxygen ion beam 1 is applied to the obtained composite oxide thin film 8.
Zeros are injected in a predetermined pattern. The injection conditions were as follows.
加速電圧：１２０ｋＶ
Ｖ−ズ量： １ ｘ １０ ａｔｏｍｓ／ｍ酸素イオ
ンビーム１０の注入された部分は超電導特性を示し、そ
の臨界温度Ｔｃは８４にである。注入部分の組成はＹＢ
ａ２Ｃｕ３Ｏ７，ｓ即ちＸ：０．４であり、結晶構造は
斜方晶であることがわかった。Accelerating voltage: 120 kV V-Z amount: 1 x 10 atoms/m The implanted portion of the oxygen ion beam 10 exhibits superconducting properties, and its critical temperature Tc is 84°C. The composition of the injection part is YB
a2Cu3O7,s, that is, X: 0.4, and the crystal structure was found to be orthorhombic.
さらに上記の酸素イオンビーム注入を行った複合酸化物
薄膜８を酸素雰囲気中において温度５５０℃で３時間の
熱処理を行ったところ、［［導特性の向上が見られ、臨
界温度が９４にとなった。組成はＹＢａ２Ｃｕ３０ａ＊
でｘ＝０．１であツタ。Furthermore, when the composite oxide thin film 8 subjected to the above-mentioned oxygen ion beam implantation was heat-treated at a temperature of 550°C for 3 hours in an oxygen atmosphere, an improvement in conductivity was observed, and the critical temperature reached 94°C. Ta. Composition is YBa2Cu30a*
So x=0.1 and ivy.
（実施例２）
第２図はこの発明の他の実施例を示すもので、第１図と
同一の部材には同一の符号を付し説明を省略する。第１
図との相異点は、走査電極、走査電源が無く、その代り
パイプ状の焼結体１２が回転台１１の上に載置され１方
向に回転しつつ軸方向に上下に移動する点である。(Embodiment 2) FIG. 2 shows another embodiment of the present invention, in which the same members as in FIG. 1 are given the same reference numerals and their explanations will be omitted. 1st
The difference from the figure is that there are no scanning electrodes or scanning power supplies, and instead a pipe-shaped sintered body 12 is placed on a rotary table 11 and rotates in one direction while moving up and down in the axial direction. be.
パイプ状の焼結体の組成は実施例１と同様にＹ Ｂ ａ
ｚＣｕ ３０７−１ （０＜ ｘ＜ １ ）である。The composition of the pipe-shaped sintered body is YB a as in Example 1.
zCu 307-1 (0<x<1).
この焼結体は前記組成ｔこなるよう、各金属の酸化物粉
体を配合してよく混合してアルミナまたはマグネシアの
ルツボのなかで７００℃〜９５０℃の温度で仮焼し、そ
れぞれの粉体を反応させたあと、得られた粉体をライカ
イ機などで粉砕してから、ポリビニルアルコール等のバ
インダを添加してパイプ状のものを押出成型し、その後
大気中において８５０℃の温度で５時間焼成して形成す
ることができる。パイプ状焼結体１２の結晶構造は正方
晶、Ｘは０．９である。外径は２５１ｍｌ 、内径２０
ｍｓ 、長さ５０關である。This sintered body is made by blending oxide powders of each metal, mixing them thoroughly, and calcining them in an alumina or magnesia crucible at a temperature of 700°C to 950°C to obtain the above composition. After reacting the powder, the resulting powder is pulverized using a Raikai machine, etc., and a binder such as polyvinyl alcohol is added to extrude it into a pipe shape. It can be formed by firing for hours. The crystal structure of the pipe-shaped sintered body 12 is tetragonal, and X is 0.9. Outer diameter is 251ml, inner diameter is 20
ms, length 50 degrees.
このような焼結体１２にｃｆ素イオンビームｌＯヲスバ
イラルに注入する。酸素イオンビーム注入条件は次の通
りである。A cf elementary ion beam lO is injected into the sintered body 12 in a viral manner. The oxygen ion beam implantation conditions are as follows.
加速電圧：１２０ｋＶ
ド − ズ 量 ： １ｘｌｏ ａｔｏｍ
ｓβ回転台回転数：４ｒｐｍ
軸方向移動速度 ＝ ５龍／回転
酸素イオンビーム１０の注入部は超電導性を示し、臨界
温度は７９ Ｋであった。このようにしてコイル状のセ
ラミックス超電導体を形成することができる。Acceleration voltage: 120kV Dose amount: 1xlo atom
sβ rotary table rotation speed: 4 rpm Axial movement speed = 5 dragons/rotation The implantation part of the oxygen ion beam 10 exhibited superconductivity, and the critical temperature was 79 K. In this way, a coiled ceramic superconductor can be formed.
さらに上述の酸素イオンビーム注入を行った焼結体を、
酸素雰囲気中において温度５８０℃で５時間熱処理を行
ったところ、注入部の臨界温度が９８Ｋに高まった。Furthermore, the sintered body subjected to the above-mentioned oxygen ion beam implantation,
When heat treatment was performed at a temperature of 580° C. for 5 hours in an oxygen atmosphere, the critical temperature of the injection part increased to 98K.
この発明によれば、希土類元素（Ｌｎ）とアルカリ土類
元素（Ｐｗｔ）と銅（Ｃｕ）とを含み、組成ＬｎＭ ２
Ｃｕ３ ｏ、−ｘを有する一酸化物セラミックス体に酸
素イオンビームを注入するので、注入部が超電導体化し
、その結果任意のバクーンのセラミックス超電導体を酸
化物セラミックス体上に形成することが可能となる。According to this invention, it contains a rare earth element (Ln), an alkaline earth element (Pwt), and copper (Cu), and has a composition LnM 2
Since an oxygen ion beam is implanted into a monoxide ceramic body containing Cu3o, -x, the implanted part becomes a superconductor, and as a result, it is possible to form any type of ceramic superconductor on the oxide ceramic body. Become.
第１図はこの発明の一実施例になるセラミックス超電導
体製造方法の説明図、第２図は他の実施例になるセラミ
ックス超・１導体製造方法の説明図である。
８：複合酸化物薄膜、１０：酸素イオンビーム、第 １
（３）FIG. 1 is an explanatory diagram of a method for manufacturing a ceramic superconductor according to one embodiment of the present invention, and FIG. 2 is an explanatory diagram of a method for manufacturing a ceramic superconductor according to another embodiment. 8: Composite oxide thin film, 10: Oxygen ion beam, 1st
(3)
Claims (1)
（Ｃｕ）とを含み組成ＬｎＭ＿２Ｃｕ＿３Ｏ＿７＿−＿
Ｘを有する酸化物セラミックス体に酸素イオンを注入し
、前記酸化物セラミックス体上に所定のパターンの超電
導体を形成することを特徴とするセラミックス超電導体
の製造方法。1) Composition LnM_2Cu_3O_7_-_ Contains rare earth element (Ln), alkaline earth element (M) and copper (Cu)
A method for manufacturing a ceramic superconductor, which comprises implanting oxygen ions into an oxide ceramic body having X to form a superconductor in a predetermined pattern on the oxide ceramic body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63007687A JPH01183481A (en) | 1988-01-18 | 1988-01-18 | Production of ceramic superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63007687A JPH01183481A (en) | 1988-01-18 | 1988-01-18 | Production of ceramic superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01183481A true JPH01183481A (en) | 1989-07-21 |
Family
ID=11672697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63007687A Pending JPH01183481A (en) | 1988-01-18 | 1988-01-18 | Production of ceramic superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01183481A (en) |
-
1988
- 1988-01-18 JP JP63007687A patent/JPH01183481A/en active Pending
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