JPH01179379A - Frequency stabilization of semiconductor laser and device therefor - Google Patents

Frequency stabilization of semiconductor laser and device therefor

Info

Publication number
JPH01179379A
JPH01179379A JP40988A JP40988A JPH01179379A JP H01179379 A JPH01179379 A JP H01179379A JP 40988 A JP40988 A JP 40988A JP 40988 A JP40988 A JP 40988A JP H01179379 A JPH01179379 A JP H01179379A
Authority
JP
Japan
Prior art keywords
frequency
semiconductor laser
injection current
frequencies
beat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP40988A
Other languages
Japanese (ja)
Inventor
Hideo Takizawa
滝沢 英郎
Tadashi Suda
須田 匡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP40988A priority Critical patent/JPH01179379A/en
Publication of JPH01179379A publication Critical patent/JPH01179379A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687Stabilising the frequency of the laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To simplify the formation and handling of an optical part and allow its optical part to applied to a length measuring machine which is used at the site of production, by controlling beat frequencies of two pieces of semiconductor laser elements having different inrush current vs. oscillation frequency characteristics so that the beat frequencies are held constant. CONSTITUTION:Laser beams having different frequencies which are outgone from each element are collimated by lenses 2a and 2b and then, are divided into two parts by beam splitter 3a and 3b respectively. Then, one of beams splitted respectively is used in a length measuring machine. Other two beams are mixed by a beam mixer 11 to produce a beat frequency having a difference between frequencies. Its beam frequency is joined to a signal of a beat frequency (nua-nub) by a light receiving apparatus 6. The beat frequency is converted into a voltage signal by an F-V converter 12 and is inputted to a current control circuit 13 as positive and negative signal voltages after comparing its frequency with a constant reference value Vs by comparator 8. In this way, the control signal of an inrush current is given to an inrush current source 10 and the inrush current which makes oscillation frequencies regular is supplied to elements.

Description

【発明の詳細な説明】 [産業上の利用分野コ この発明は、半導体レーザの周波数の安定C上方法とそ
の装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a method and apparatus for stabilizing the frequency of a semiconductor laser.

[従来の技術] 最近急速に進歩している半導体レーザは、従来のガスレ
ーザ管によるものに比して小型で消費電力が少なく、各
方面に広く利用されている。しかし、半導体レーザは温
度、注入電流により発振周波数が変動する欠点があり、
このままでは精密な計測器、例えば干渉計またはこれに
よる測長器には実用できない。このような周波数変動を
排除して安定化するには、変動を検出して温度および注
入電流の制御にフィードバックすることが必要である0
周波数の変動の検出とフィードバックの方法には従来か
ら種々のものがあり、第3図にその1例を示す。図にお
いて、半導体レーザ素子1より出射され、レンズ2によ
りコリメイトされたレーザビームはビームスプリッタ3
により2分割される。直進するビームは干渉計5におい
て干渉縞を形成し、その一部を受光器6−2で受光して
電圧V2がえられる。ビームスプリッタで反射した他方
のビームはミラー4を経て受光器6−1に入力して電圧
v1が出力される。除算器7により電圧比V 2/ V
 1が算出され、さらにコンパレータ8により一定の参
照電圧V。を閃値として、これを越える部分が干渉縞信
号として演算部9に入力する。
[Prior Art] Semiconductor lasers, which have been rapidly progressing in recent years, are smaller and consume less power than conventional gas laser tubes, and are widely used in various fields. However, semiconductor lasers have the disadvantage that their oscillation frequency fluctuates depending on temperature and injection current.
In this state, it cannot be put to practical use as a precision measuring instrument, such as an interferometer or a length measuring instrument using this. To eliminate and stabilize such frequency fluctuations, it is necessary to detect the fluctuations and feed them back into the temperature and injection current control.
There have been various methods of detecting and feeding back frequency fluctuations, one example of which is shown in FIG. In the figure, a laser beam emitted from a semiconductor laser device 1 and collimated by a lens 2 is transmitted to a beam splitter 3.
It is divided into two parts. The straight-progressing beam forms interference fringes in the interferometer 5, a part of which is received by the light receiver 6-2, and a voltage V2 is obtained. The other beam reflected by the beam splitter passes through mirror 4 and is input to photoreceiver 6-1, where voltage v1 is output. The voltage ratio V2/V is determined by the divider 7.
1 is calculated, and a constant reference voltage V is further calculated by the comparator 8. is set as the flash value, and the portion exceeding this value is input to the calculation section 9 as an interference fringe signal.

演算部においては、波長変動により生じた干渉縞信号の
変化により、予め知られた半導体レーザ素子の注入電流
対波長特性にもとすいて、注入電流の制御数値を演算し
て注入電流源1oに与え、発振周波数が一定に保持され
る。なお、上記の電圧V1は、レーザビームの強度の変
動の影響を除去するためのものであり、また図示しない
が、温度変動に対しては、フィードバック方法により安
定fヒが行われている。
In the calculation section, a control value for the injection current is calculated based on the change in the interference fringe signal caused by the wavelength fluctuation, based on the injection current vs. wavelength characteristic of the semiconductor laser element known in advance, and is applied to the injection current source 1o. and the oscillation frequency is held constant. Note that the voltage V1 mentioned above is for eliminating the influence of fluctuations in the intensity of the laser beam, and although not shown, stabilization is performed with respect to temperature fluctuations by a feedback method.

[発明が解決しようとする課題] さて、上記における干渉計5としては、従来から公知の
ファブリ・ベロー干渉計が専ら使用されている。しかし
ながら、ファブリ・ベロー干渉計は元来、スペクトルの
微細構造を精密に調べる場合などに極めて効果的なもの
であるが、それなりにその調整、取り扱い方法には難し
い点があり、また酒格も安価ではない。
[Problems to be Solved by the Invention] Now, as the interferometer 5 in the above, a conventionally known Fabry-Bérot interferometer is exclusively used. However, although the Fabry-Bérot interferometer is originally extremely effective for precisely examining the fine structure of spectra, there are certain difficulties in its adjustment and handling methods, and it is also inexpensive. isn't it.

これに対して、生産現場で使用する測長器などに用いら
れる半導体レーザにおいては1周波数変動がかなり大き
い上、変動の速度が絶えず変化することを前提条件とす
るので、周波数の変動に対応して面倒な調整を必要とす
るファブリ・ベロー干渉計を適用することは効率的で・
はない。
On the other hand, semiconductor lasers used in length measuring instruments used at production sites have considerably large fluctuations in one frequency, and the speed of fluctuation must constantly change, so it is difficult to respond to frequency fluctuations. Applying the Fabry-Bérot interferometer, which requires complicated adjustment, is efficient and
There isn't.

この発明は、測長器等に適用できる簡易で有効な半導体
レーザの周波数の安定r上方法およびその装置を提供す
ることを目的とするものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a simple and effective method for stabilizing the frequency of a semiconductor laser, which can be applied to a length measuring device, etc., and an apparatus therefor.

[課題を解決するための手段] この発明は半導体レーザの周波数の安定化方法およびそ
の装置である。
[Means for Solving the Problems] The present invention is a method and device for stabilizing the frequency of a semiconductor laser.

まず安定化の方法は、注入電流に対する発振周波数の特
性曲線(直線)の傾斜角が異なり、一定の温度に維持さ
れた2個の半導体レーザ素子を直列に接続して、同一の
注入電流で発振させ、この2個の素子の出射するレーザ
ビームを混合して両ビームの周波数のビート周波数とし
て、該ビート周波数を一定値に保持するように注入電流
の値を制御するものである。
First, the stabilization method is to connect two semiconductor laser devices in series, which have different slope angles of the oscillation frequency characteristic curve (straight line) with respect to the injection current and are maintained at a constant temperature, and oscillate with the same injection current. The laser beams emitted from these two elements are mixed to obtain a beat frequency of the frequencies of both beams, and the value of the injection current is controlled so as to maintain the beat frequency at a constant value.

次に、安定化装置は下記により構成される。注入電流対
発振周波数の特性曲線(直線)の傾斜角が異なり、かつ
直列に接続された2個の半導体レーザ素子と、これらの
素子を一定の温度に維持する温度安定化装置と、2個の
素子の出射するレーザビームをそれぞれ2分割するビー
ムスプリッタと、分割されたそれぞれの一方のビームを
混合するビーム混合器と、混合により生じたビート周波
数のレーザビームを受光する受光器と、受光器の出力す
るビート周波数信号を、周波数に比例した信号電圧に変
換する周波数−電圧変換器と、この信号電圧により注入
電流を制御して半導体レーザ素子に注入する電流制御回
路および注入電流源とにより構成されたものである。
Next, the stabilizing device is constructed as follows. Two semiconductor laser elements whose inclination angles of characteristic curves (straight lines) of injection current versus oscillation frequency are different and are connected in series, a temperature stabilizer that maintains these elements at a constant temperature, and two semiconductor laser elements are connected in series. A beam splitter that splits each laser beam emitted by the element into two, a beam mixer that mixes one of the split beams, a light receiver that receives the laser beam at the beat frequency generated by the mixing, and a light receiver that It consists of a frequency-voltage converter that converts the output beat frequency signal into a signal voltage proportional to the frequency, a current control circuit and an injection current source that controls the injection current using this signal voltage and injects it into the semiconductor laser element. It is something that

[作用] まず、この発明における周波数の安定化の原理を説明す
る。一般に半導体レーザの発振周波数は動作温度と注入
電流により変動する。いま、−注入電流対発振周波数特
性の異なる2個のレーザ素子の温度を一定に維持して同
一の注入電流を供給するときは異なる周波数を発振する
が、特性曲線(直線)の傾斜角が相違するときは、2つ
の周波数の差の周波数は、注入電流に対応して変化し、
ある注入電流値に対して、差周波数は一つの値をとる。
[Operation] First, the principle of frequency stabilization in this invention will be explained. Generally, the oscillation frequency of a semiconductor laser varies depending on the operating temperature and injection current. Now, when two laser elements with different injection current vs. oscillation frequency characteristics are kept at a constant temperature and supplied with the same injection current, they oscillate at different frequencies, but the slope angles of their characteristic curves (straight lines) are different. When, the frequency of the difference between the two frequencies changes in response to the injected current,
For a certain injection current value, the difference frequency takes one value.

すなわち、注入電流に対して差周波数、従って2つの周
波数は一意的に決まるものである。そこで、両ビームの
ビート周波数をつくり、これを一定に保持する制御を行
うことにより2つの発振周波数の安定化が計られる。こ
の場合、前記した従来における極めて高い光周波数の干
渉縞の検出方法に比較して大幅に低いビート周波数の処
理となり、干渉計およびその調整を必要としない利点が
ある。
That is, the difference frequency, and therefore the two frequencies, are uniquely determined for the injected current. Therefore, the two oscillation frequencies can be stabilized by creating beat frequencies for both beams and performing control to maintain them constant. In this case, compared to the conventional method of detecting interference fringes at an extremely high optical frequency, the beat frequency is processed much lower, and there is an advantage that an interferometer and its adjustment are not required.

以上に述べた安定化の原理にもとすき、この発明による
半導体レーザの周波数安定化方法においては、注入電流
対発振周波数の特性曲線の傾斜角の異なる2個の半導体
レーザ素子を直列に接続して、かつ一定の温度に維持し
て同一注入電流を供給し、異なる周波数で発振させる。
Based on the stabilization principle described above, in the method for stabilizing the frequency of a semiconductor laser according to the present invention, two semiconductor laser elements having different slope angles of the characteristic curve of injection current versus oscillation frequency are connected in series. The same injection current is supplied at a constant temperature and oscillations are made at different frequencies.

2つの周波数を混合してビート周波数をつくり、これを
一定値とするように注入電流を制御して両周波数の安定
fヒを行うものである。
The two frequencies are mixed to create a beat frequency, and the injected current is controlled so that the beat frequency remains at a constant value, thereby stabilizing both frequencies.

次に、この発明による周波数安定化装置は上記の方法を
具体化したもので、温度安定化装置により2個の半導体
レーザ素子は一定温度に維持され、画素子に同一の電流
を注入して異なる周波数を発振させる。この発振周波数
を混合してえられたビート周波数の信号を、電圧値に変
換して電流制御回路に入力し、その制御により注入電流
源より発振周波数を一定にする注入電流を素子に供給す
るものである。
Next, the frequency stabilizing device according to the present invention is an embodiment of the above method, in which the two semiconductor laser elements are maintained at a constant temperature by the temperature stabilizing device, and the same current is injected into the pixel element to generate different oscillate the frequency. The beat frequency signal obtained by mixing these oscillation frequencies is converted into a voltage value and input to the current control circuit, and under the control of the current control circuit, an injection current source that keeps the oscillation frequency constant is supplied to the element. It is.

[実施例コ 第1図(a)、(b)によりこの発明による半導体レー
ザの発振周波数の安定化方法を説明する。
[Example 1] A method for stabilizing the oscillation frequency of a semiconductor laser according to the present invention will be explained with reference to FIGS. 1(a) and 1(b).

いま任意の2個の半導体レーザ素子をとり、それぞれの
注入電流Ii対発振周波数νの特性曲線をみると、個々
の特性にバラツキがあるために2個に対する特性曲線は
、第1図(a>のように異なる傾斜角の直線Da、Db
を示す。なお、これらの直線は、注入電流Iiのある値
(図示Ia、Ib)で不連続に変化してDa ’ 、 
Db ’となるが、このような範囲は除外するものとす
る。さて、注入電流Iiを同一のI。とするとき、これ
に対する各発振周波数は直線D&によりνaO+直線D
bによりνboである。また、注入電流を■1とすると
きは、それぞれシal、シb1である。ここで、両直線
DaとDbの傾斜が異なるのでこれらの周波数の差、(
シaQ−シbo)と(シミ1−シb+)は異なる値であ
る。いま、注入電流を例えば1.に保持すれば周波数差
(シa□−シbo)が一定に保持され、それぞれの発振
周波数νaOとνboとが一意的に対応して一定値に保
持される。そこで、周波数差(νa、)−νbo)を一
定に保持するように注入電流を制御する。このような考
えにより、2個のレーザ素子のレーザビームを混合して
ビート周波数を作り、その変動を検出して注入電流の制
御行うことにより、半導体レーザの発振周波数の安定f
ヒを行うことができる。なお、上記において、両直線の
間隔、傾斜角が適当でないときは、次の方法によりそれ
らを調整する。すなわち、第1図(b)は上記の2個の
半導体レーザ素子の等厘回路で、素子Da、Dbの並列
抵抗Ra、Rhは、素子の損失を表す等価抵抗と付加し
た外部抵抗の合成抵抗である。
Now, if we take two arbitrary semiconductor laser devices and look at their respective characteristic curves of injection current Ii versus oscillation frequency ν, since there are variations in the individual characteristics, the characteristic curves for the two devices are as shown in Figure 1 (a> Straight lines Da and Db with different inclination angles as
shows. Note that these straight lines change discontinuously at a certain value of the injection current Ii (Ia, Ib in the figure), resulting in Da',
Db', but such a range is excluded. Now, let the injection current Ii be the same I. Then, each oscillation frequency for this is νaO+straight line D by straight line D&
b is νbo. Further, when the injection current is 1, sial and sial are respectively b1. Here, since the slopes of both straight lines Da and Db are different, the difference between these frequencies, (
SheaQ-shibo) and (stain1-shib+) are different values. Now, let's say that the injection current is 1. If the frequency difference (a□−shibo) is held constant, the respective oscillation frequencies νaO and νbo uniquely correspond to each other and are held at a constant value. Therefore, the injection current is controlled so as to keep the frequency difference (va,)-vbo) constant. Based on this idea, the oscillation frequency of the semiconductor laser can be stabilized by mixing the laser beams of two laser elements to create a beat frequency, detecting its fluctuation, and controlling the injection current.
You can do this. In the above, if the distance between the two straight lines and the angle of inclination are not appropriate, adjust them using the following method. In other words, FIG. 1(b) is an equal circuit of the above two semiconductor laser devices, and the parallel resistances Ra and Rh of the devices Da and Db are the combined resistances of the equivalent resistance representing the loss of the device and the added external resistance. It is.

外部抵抗値を゛変えることにより1図(a)の直線の間
隔と傾斜角が調食され、注入電流に対して適切な差周波
数とすることができる。
By changing the external resistance value, the spacing and inclination angle of the straight lines shown in FIG. 1(a) can be adjusted, and an appropriate difference frequency can be obtained for the injected current.

第2図は、この発明による半導体レーザの周波数安定化
方法および安定化装置の実施例の構成図である。図にお
いて、2個の半導体レーザ素子1a、lbは、ヒートシ
ンク14bに取り付けられる。
FIG. 2 is a block diagram of an embodiment of a semiconductor laser frequency stabilization method and stabilization device according to the present invention. In the figure, two semiconductor laser elements 1a and lb are attached to a heat sink 14b.

この温度を温度センサ15bにより検出して温度安定化
回路15aによりベルチェ素子14aの温度を制御して
、これに固定されたヒートシンクが、従って素子の温度
が一定に維持される。
This temperature is detected by the temperature sensor 15b, and the temperature of the Bertier element 14a is controlled by the temperature stabilization circuit 15a, so that the temperature of the heat sink fixed thereto and therefore of the element is maintained constant.

各素子より出射される異なる周波数のレーザビームは、
レンズ2a、2bによりコリメイトされてビームスプリ
ッタ3a、3bによりそれぞれ2分割される。それぞれ
で分割された一方のビームは洞長器に使用され、池方の
2つのビームは、ビーム混合器11で混合されて両周波
数の差のビート周波数を生ずる。具体的な数値としては
、ビート周波数は数G Hzである。これが受光器6に
受光され、ビート周波数(シa−シb)の信号が出力さ
れる。
The laser beams of different frequencies emitted from each element are
It is collimated by lenses 2a and 2b and divided into two by beam splitters 3a and 3b, respectively. One of the split beams is used for the tunnel length machine, and the two Ikekata beams are mixed in a beam mixer 11 to produce a beat frequency that is the difference between the two frequencies. As a concrete numerical value, the beat frequency is several GHz. This light is received by the light receiver 6, and a signal of the beat frequency (sha-b) is output.

ついで、ビート信号はF−V変換器12により電圧信号
に変換され、コンパレータ8において一定の基゛準位v
sに比較されて、正負の信号電圧となって電流制御回路
13に入力する。これにより注入電流の制御信号が注入
電流源10に与えられ、発振周波数を一定にする注入電
流が素子に供給される。
Next, the beat signal is converted into a voltage signal by the F-V converter 12, and the beat signal is converted to a voltage signal by the comparator 8.
s and becomes a positive and negative signal voltage, which is input to the current control circuit 13. As a result, an injection current control signal is given to the injection current source 10, and an injection current that keeps the oscillation frequency constant is supplied to the element.

なお、F−V変換器、コンパレータなど温度により特性
が変化するものは、必要により一定温度の恒温槽に収容
される。
Note that items whose characteristics change depending on temperature, such as an F-V converter and a comparator, are housed in a constant temperature oven if necessary.

[発明の効果] 以上の説明により明らかなように、この発明による半導
体レーザの周波数安定化方法および装置においては、注
入電流対発振周波数特性の異なる2個の半導体レーザ素
子のビート周波数を一定に保持するように制御すること
により、各素子の発振周波数を一定に保持するもので、
周波数の変動を干渉計により直接的に測定して制御する
従来の方法に比較して、非常に低い周波数のビート信号
の処理であり、また無調整であるので、光学部の構成と
取り扱いが簡易であり、生産現場で使用する測長器など
に応用できる効果には大きいものがある。
[Effects of the Invention] As is clear from the above explanation, in the semiconductor laser frequency stabilization method and device according to the present invention, the beat frequency of two semiconductor laser elements having different injection current vs. oscillation frequency characteristics can be maintained constant. By controlling the oscillation frequency of each element to be constant,
Compared to the conventional method of directly measuring and controlling frequency fluctuations using an interferometer, this method processes beat signals at a very low frequency and requires no adjustment, making the configuration and handling of the optical section simpler. Therefore, it has great effects when applied to length measuring instruments used at production sites.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)、(b)は、この発明による半導体レーザ
の周波数安定化方法の原理を説明する半導体レーザ素子
の注入電流対発振周波数特性曲線図と半導体レーザ素子
の等価回路図、第2図はこの発明による半導体レーザの
周波数安定化方法および装置の実施例の構成図、第3図
は干渉計による従来の周波数安定化装置の1例の構成図
である。 1・・−レーザ光源、   2・・・レンズ、3・−・
ビームスプリ・ツタ、4・・・ミラー、5・・・ファプ
リー・ベロー干渉計、 6・・・受光器、     7・・−除算器、8・・・
コンパレータ、   9・・−演算部、10・・・注入
電流源、   11・・・ビーム混合器、12・・・F
−V変換器、  13・・・電流制御回路、1−43・
・・ベルチェ素子、 14b・・・ヒートシンク、15
a・・・温度安定化回路、15b・・・温度センサ。
1(a) and 1(b) are an injection current versus oscillation frequency characteristic curve diagram of a semiconductor laser device, an equivalent circuit diagram of the semiconductor laser device, and a second FIG. 3 is a block diagram of an embodiment of a semiconductor laser frequency stabilization method and device according to the present invention, and FIG. 3 is a block diagram of an example of a conventional frequency stabilization device using an interferometer. 1...-laser light source, 2...lens, 3...-
Beam splitter, 4...Mirror, 5...Fapley-Bello interferometer, 6...Receiver, 7...-divider, 8...
Comparator, 9...-Arithmetic unit, 10... Injection current source, 11... Beam mixer, 12...F
-V converter, 13... current control circuit, 1-43.
...Beltier element, 14b...Heat sink, 15
a... Temperature stabilization circuit, 15b... Temperature sensor.

Claims (2)

【特許請求の範囲】[Claims] (1)注入電流に対する発振周波数の特性曲線(直線)
の傾斜角が異なり、かつ一定の温度に維持された2個の
半導体レーザ素子を直列に接続して、同一の注入電流で
発振させ、該2個の半導体レーザ素子の出射する異なる
周波数のレーザビームを混合してえられるビート周波数
を、一定値に保持するように上記注入電流の値を制御す
ることを特徴とする、半導体レーザの周波数安定化方法
(1) Characteristic curve of oscillation frequency versus injection current (straight line)
Two semiconductor laser devices with different inclination angles and maintained at a constant temperature are connected in series and oscillated with the same injection current, and the two semiconductor laser devices emit laser beams of different frequencies. A method for stabilizing the frequency of a semiconductor laser, the method comprising: controlling the value of the injection current so as to maintain a beat frequency obtained by mixing the above at a constant value.
(2)注入電流に対する発振周波数の特性曲線(直線)
の傾斜角が異なり、かつ直列に接続された2個の半導体
レーザ素子と、該半導体レーザ素子を一定の温度に維持
する温度安定化装置と、該2個の半導体レーザ素子の出
射する各レーザビームをそれぞれ2分割するビームスプ
リッタと、分割されたそれぞれの一方を混合するビーム
混合器と、該混合により生じたビート周波数のレーザビ
ームを受光する受光器と、該受光器より出力されるビー
ト周波数信号を、周波数に比例した信号電圧に変換する
周波数−電圧変換器と、該信号電圧により、上記注入電
流を制御して上記2個の半導体レーザ素子に注入する電
流制御回路および注入電流源とにより構成されたことを
特徴とする、半導体レーザの周波数安定化装置。
(2) Characteristic curve of oscillation frequency versus injection current (straight line)
two semiconductor laser elements having different inclination angles and connected in series; a temperature stabilizing device for maintaining the semiconductor laser elements at a constant temperature; and each laser beam emitted by the two semiconductor laser elements. a beam splitter that splits each into two, a beam mixer that mixes one of the splits, a light receiver that receives the laser beam of the beat frequency generated by the mixing, and a beat frequency signal output from the light receiver. , a frequency-voltage converter that converts the current into a signal voltage proportional to the frequency, and a current control circuit and an injection current source that control the injection current and inject it into the two semiconductor laser elements using the signal voltage. A frequency stabilizing device for a semiconductor laser, characterized in that:
JP40988A 1988-01-06 1988-01-06 Frequency stabilization of semiconductor laser and device therefor Pending JPH01179379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP40988A JPH01179379A (en) 1988-01-06 1988-01-06 Frequency stabilization of semiconductor laser and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP40988A JPH01179379A (en) 1988-01-06 1988-01-06 Frequency stabilization of semiconductor laser and device therefor

Publications (1)

Publication Number Publication Date
JPH01179379A true JPH01179379A (en) 1989-07-17

Family

ID=11473002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP40988A Pending JPH01179379A (en) 1988-01-06 1988-01-06 Frequency stabilization of semiconductor laser and device therefor

Country Status (1)

Country Link
JP (1) JPH01179379A (en)

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