JPH01169305A - Pattern detecting method of microscope apparatus - Google Patents
Pattern detecting method of microscope apparatusInfo
- Publication number
- JPH01169305A JPH01169305A JP32694187A JP32694187A JPH01169305A JP H01169305 A JPH01169305 A JP H01169305A JP 32694187 A JP32694187 A JP 32694187A JP 32694187 A JP32694187 A JP 32694187A JP H01169305 A JPH01169305 A JP H01169305A
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- stage
- light
- dimensional image
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims description 27
- 238000005286 illumination Methods 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 5
- 206010047571 Visual impairment Diseases 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000005109 Cryptomeria japonica Species 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体ウェハなどのパターンを検出する顕微鏡
装置に係わり、特に微細パターンを高倍率に拡大するな
どの理由により検出光量が不足する場合に好適なパター
ン検出方法に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a microscope device for detecting patterns on semiconductor wafers, etc., and is particularly applicable when the amount of detected light is insufficient due to reasons such as enlarging a fine pattern to a high magnification. This invention relates to a preferred pattern detection method.
従来、半導体製造用のマスクやレチクル等、透明なプレ
ート上のパターンを自動外観検査する顕微鏡装置が実用
化されている。これらの装置においてパターンを検出す
る方法としては、第５図に示すよう試料１５を連続送り
しながら連続点灯する光源１で透過照明を行い、対物レ
ンズ４で試料１５上のパターンを拡大し１次元リニアセ
ンサ１６で図中斜線で示す領域を随時検出していく方法
がある。また２次元撮像素子を用いる場合については１
例えばＮＴＴ電気通信研究所実用化報告第３１巻２号（
１９８０年）第４６９頁から第４８９頁の辻山他による
「自動マスク欠陥検査装置」において論じられている。BACKGROUND ART Microscope devices have been put into practical use for automatically inspecting patterns on transparent plates, such as masks and reticles for semiconductor manufacturing. As shown in Fig. 5, the method for detecting patterns in these devices is to carry out transmitted illumination with a continuously lit light source 1 while continuously feeding the sample 15, and to enlarge the pattern on the sample 15 with an objective lens 4 to obtain a one-dimensional image. There is a method in which the linear sensor 16 detects the area indicated by diagonal lines in the figure at any time. In addition, when using a two-dimensional image sensor, 1
For example, NTT Telecommunications Laboratories Practical Application Report Vol. 31 No. 2 (
Discussed in "Automated Mask Defect Inspection Apparatus" by Tsujiyama et al., pp. 469-489 (1980).
この装置は第６図に示すように、試料１５を連続送りし
ながらストロボ光源１７を間欠的に発光させ、対物レン
ズ４で試料１５上のパターンを拡大し撮像管式ＴＶカメ
ラ１８で図中斜線で示す領域１，２．３を随時検出して
いく方法である。この装置は撮像管式ＴＶカメラ１８の
フレームブランキング機能、すなわち映像信号の読出し
を禁止し替像だけを行う機能を利用している。つまり第
７図に示すように読出しを禁止した第ｎフレームの期間
中にストロボ光源１７を発光させ、撮像管の受光面に静
止像を替像し第ｎ＋１フレームで映像信号の読出しを行
っている。As shown in FIG. 6, this device causes a strobe light source 17 to emit light intermittently while continuously feeding a sample 15, magnifies the pattern on the sample 15 with an objective lens 4, and uses an image pickup tube type TV camera 18 to illuminate the diagonal lines in the figure. This is a method of constantly detecting areas 1, 2, and 3 shown in . This device utilizes the frame blanking function of the image pickup tube type TV camera 18, that is, the function of prohibiting the reading of the video signal and only performing image replacement. In other words, as shown in FIG. 7, the strobe light source 17 is made to emit light during the nth frame in which readout is prohibited, a still image is replaced on the light receiving surface of the image pickup tube, and the video signal is read out in the n+1th frame. .
上記従来技術は透明なプレート上のパターンを対象とし
たものであるが、半導体製造プロセスでは品質管理等を
目的として、シリコンウェハで上に形成したパターンの
自動外観検査が要求されている。この場合シリコンウェ
ハは不透明であるため透過式検出は行えず、落射照明を
行い試料からの反射光を検出しなければならない、落射
照明を行う場合には第８図（１）に示すように、光路中
に半透鏡３を挿入しなければならず、透過光検出の場合
に比ベセンサ１３で検出する光量が減少する。半透鏡を
除く他の光学素子の反射、吸収を無視した場合、同図（
２）に示すように透過照明では光源１からの照明に使わ
れる光量を１００％とすると、コンデンサレンズ１４、
透明なプレート状の試料１５、対物レンズ４を介しセン
サ１３上で１００％の光量を検出に用いることができる
。Although the above-mentioned conventional technology targets patterns on transparent plates, automatic visual inspection of patterns formed on silicon wafers is required in semiconductor manufacturing processes for the purpose of quality control and the like. In this case, since the silicon wafer is opaque, transmission detection cannot be performed, and epi-illumination must be used to detect the reflected light from the sample. When epi-illumination is used, as shown in Figure 8 (1), The semi-transparent mirror 3 must be inserted into the optical path, which reduces the amount of light detected by the comparison sensor 13 in the case of transmitted light detection. If reflection and absorption of other optical elements except the semi-transparent mirror are ignored, the same figure (
As shown in 2), in transmitted illumination, if the amount of light used for illumination from the light source 1 is 100%, the condenser lens 14,
100% of the light intensity can be used for detection on the sensor 13 through the transparent plate-shaped sample 15 and the objective lens 4.
一方落射照明の場合には同図（１）に示すように、半透
鏡３が挿入されているため、センサ１３では最大２５％
の光量しか検出に用いることができない。その上不透明
な試料５上に低反射率の物質がある場合にはさらに検出
光量が減少することになる。On the other hand, in the case of epi-illumination, as shown in Figure (1), a semi-transparent mirror 3 is inserted, so the sensor 13 has a maximum of 25%
can only be used for detection. Furthermore, if there is a substance with low reflectance on the opaque sample 5, the amount of detected light will further decrease.
一方ＬＳＩのパターンの微細化は急速に進み。Meanwhile, the miniaturization of LSI patterns is progressing rapidly.
線巾はサブミクロンの領域に達しつつある。このような
微細なパターンの外観を検査するには、パターンの微細
化に伴い画素サイズを小さくしなければ信頼性の高い検
査を行うことができない、この場合、検出画素サイズが
小さくなるためセンサの単位画素あたりの光量が著しる
しく減少してしまう。Wire widths are reaching the submicron range. In order to inspect the appearance of such fine patterns, it is necessary to reduce the pixel size as the patterns become finer.In this case, the detection pixel size becomes smaller, so the sensor The amount of light per unit pixel is significantly reduced.
以上述べたとおり落射照明を行い、微細なパターンを検
出する場合には、センサの検出光量の減少が避けられず
、このためパターンの高速検出が困難になる。As described above, when detecting a fine pattern using epi-illumination, the amount of light detected by the sensor inevitably decreases, which makes it difficult to detect the pattern at high speed.
上記従来技術を、落射照明を行い微小画素サイズでパタ
ーンを検出する場合に適用することを考えると、１次元
リニアセンサで検出する方法では、充分なレベルの映像
信号を得るには蓄積時間を長くする必要があり、高速に
パターンを検出することは困難である。Considering that the above-mentioned conventional technology is applied to the case of detecting a pattern with a minute pixel size using epi-illumination, the detection method using a one-dimensional linear sensor requires a long integration time to obtain a video signal of a sufficient level. It is difficult to detect patterns quickly.
一方ストロボ照明を行い２次元撮像素子で検出する方法
では、ストロボの発光時間が短く替像に寄与する光量が
少ないため、高Ｓ／Ｎの映像信号を得られないという問
題があった。On the other hand, in the method of performing strobe illumination and detecting with a two-dimensional image sensor, there is a problem that a high S/N video signal cannot be obtained because the strobe light emission time is short and the amount of light contributing to the replacement image is small.
本発明の目的は、従来技術の適用が困難な微細パターン
の高速検出を可能にするパターン検出方法を提供するこ
とにある。An object of the present invention is to provide a pattern detection method that enables high-speed detection of fine patterns to which conventional techniques are difficult to apply.
上記目的は、連続点灯する光源を用いた照明系と、間欠
的な移動・停止を繰返し行うステージと、検出光学系と
、２次元撮像素子からなる顕微鏡装置において、検出光
学系にシャッタを挿入し、このシャッタをステージ及び
２次元撮像素子と同期して駆動しパターンを検出するこ
とにより達成される。The above purpose is to insert a shutter into the detection optical system in a microscope device consisting of an illumination system using a continuously lit light source, a stage that repeatedly moves and stops intermittently, a detection optical system, and a two-dimensional image sensor. This is achieved by driving this shutter in synchronization with the stage and the two-dimensional imaging device to detect the pattern.
使用する２次元撮像素子は映像信号の読出しを禁止し、
替像だけを行うフレームブランキング機能を有するもの
を用いる。シャッタは２次元撮像素子の垂直同期信号に
同期して開閉を行う。ステージが静止している間にシャ
ッタを開き、試料からの反射光を透過し、試料上のパタ
ーンの静止像を２次元撮像素子の受光面上に替像する。The two-dimensional image sensor used prohibits the reading of video signals,
Use one that has a frame blanking function that only performs image replacement. The shutter opens and closes in synchronization with the vertical synchronization signal of the two-dimensional image sensor. While the stage is stationary, the shutter is opened, light reflected from the sample is transmitted, and a still image of the pattern on the sample is replaced on the light-receiving surface of the two-dimensional image sensor.
このときフレームブランキング機能を働かせ替像だけを
行なうようにし、次のフレームで映像信号の読出しを行
う。ここでシャッタの開く期間は調整が可能であり、こ
れを増加することにより使用する２次元撮像素子に対し
十分な検出光量を与え、高Ｓ／Ｎの映像信号の検出が可
能になる。また替像後の映像信号の続出中は、シャッタ
は閉じた状態にし試料からの不要な反射光を遮ぎる。な
おステージは替像後シャッタが閉じている期間中に次の
撮像位置に移動する。At this time, the frame blanking function is activated to perform only image replacement, and the video signal is read out in the next frame. Here, the period during which the shutter is open can be adjusted, and by increasing the period, a sufficient amount of detection light is given to the two-dimensional imaging device used, and it becomes possible to detect a video signal with a high S/N ratio. In addition, while the video signal is continuously being output after the image change, the shutter is kept closed to block unnecessary reflected light from the sample. Note that the stage moves to the next imaging position while the shutter is closed after the image change.
以下、本発明の一実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の実施例のパターン検出方法の構成図を
示す、この方法は落射照明光学系と間欠的に移動・停止
を繰返すステージ部と光路中にシャッタを挿入した検出
光学系及びステージ、シャッタ、撮像素子を同期して駆
動する各々の制御回路からなる。落射照明光学系は連続
点灯する光源１と照明系の光学系を構成するレンズ群２
．半透鏡３．対物レンズ４からなる。ステージ部は間欠
的に移動・停止し試料５を載置するステージ６とステー
ジ６を駆動するモータ７からなり、ステージ制御回路１
９により駆動する。検出光学系は対物レンズ４とフィー
ルドレンズ８とリレーレンズ９とシャッタ１０と２次元
撮像素子１１からなり、シャッタ１０はシャッタ制御回
路２０で、また２次元撮像素子１１は２次元撮像素子制
御回路２１で各々駆動する。シャッタ１０は１例えばＰ
ＬＺＴと呼ばれる電気光学セラミックスと偏向板を組合
せた電気光学シャッタを用いる。また２次元撮像素子１
１は、フレームブランキング機能を有するものを用いる
。FIG. 1 shows a block diagram of a pattern detection method according to an embodiment of the present invention. This method consists of an epi-illumination optical system, a stage part that moves and stops intermittently, a detection optical system with a shutter inserted in the optical path, and a stage. , a shutter, and an image sensor, each of which is driven in synchronization with each other. The epi-illumination optical system includes a light source 1 that lights up continuously and a lens group 2 that constitutes the optical system of the illumination system.
．． Semi-transparent mirror 3. It consists of an objective lens 4. The stage part consists of a stage 6 that moves and stops intermittently and places the sample 5 thereon, and a motor 7 that drives the stage 6.
9. The detection optical system consists of an objective lens 4, a field lens 8, a relay lens 9, a shutter 10, and a two-dimensional image sensor 11. The shutter 10 is a shutter control circuit 20, and the two-dimensional image sensor 11 is a two-dimensional image sensor control circuit 21. Each is driven by The shutter 10 is 1, for example P
An electro-optic shutter that combines an electro-optic ceramic called LZT and a deflection plate is used. In addition, the two-dimensional image sensor 1
1 uses a frame blanking function.
光１１は試料５を落射照明する。そしてステージ６が静
止している間には、シャッタ１０は試料５からの反射光
を透過し、試料５上のパターンの静止像を２次元撮像素
子１１の受光面に替像する。The light 11 epi-illuminates the sample 5. While the stage 6 is stationary, the shutter 10 transmits the reflected light from the sample 5 and converts a static image of the pattern on the sample 5 onto the light receiving surface of the two-dimensional image sensor 11.
このとき２次元撮像素子１１はフレームブランキング機
能を働かせ、映像信号の読出しは行わす替像だけを行う
、シャッタ１０が開いている時間はシャッタ制御回路２
０で調整し、２次元撮像素子１１に対し十分な検出光量
を与えるように設定する。シャッタ１０を閉じ替像を終
了した後映像信号を読出す、この映像信号の読出し中に
はシャッタ１０は閉じた状態にし、試料５からの不要な
反射光を遮ぎる。ステージ６は替像する時以外のシャッ
タが閉じている期間に次の撮像位置に移動する。At this time, the two-dimensional image sensor 11 activates the frame blanking function, reads out the video signal, and only performs image replacement.
It is adjusted to 0 and set so as to give a sufficient amount of detection light to the two-dimensional image sensor 11. The shutter 10 is closed and the video signal is read out after the image is finished. During the readout of the video signal, the shutter 10 is kept closed to block unnecessary reflected light from the sample 5. The stage 6 moves to the next imaging position during the period when the shutter is closed except when changing images.
第２図に２次元撮像素子１１に固体ＴＶカメラを用いた
場合のタイミングと映像信号を示す、２次元撮像素子１
１の垂直同期信号を基準にシャツタ開閉信号、フレーム
ブランキング信号、ステージ制御信号のタイミングをと
る。まずシャッタ１０がＴ１時間開かれ、このときフレ
ームブランキング信号を読み出し禁止の状態にし、Ｔ１
時間蓄偉才る。このときステージ６は静止しており。FIG. 2 shows the timing and video signals when a solid-state TV camera is used as the two-dimensional image sensor 11.
The timing of the shutter opening/closing signal, frame blanking signal, and stage control signal is determined based on the vertical synchronization signal No. 1. First, the shutter 10 is opened for a time T1, and at this time, the frame blanking signal is set to a read-inhibited state, and
I'm great at saving time. At this time, stage 6 is stationary.
試料５上のパターンの静止像が得られる。替像時間Ｔ□
はシャッタ制御回路２０で任意に変更でき、２次元撮像
素子１１が高Ｓ／Ｎの映像信号を得られるように調整す
る。シャッタ１０を閉じるとステージ６は移動を開始し
次の撮像位置に移動する。A still image of the pattern on sample 5 is obtained. Replacement image time T□
can be arbitrarily changed by the shutter control circuit 20 and adjusted so that the two-dimensional image sensor 11 can obtain a high S/N video signal. When the shutter 10 is closed, the stage 6 starts moving and moves to the next imaging position.
ステージ６の移動中はシャッタ１０が閉じているため、
２次元撮像素子１１は試料５からの不要な反射光を替像
することはない。替像後火のフレームではフレームブラ
ンキング信号を読出し可能の状態にし、替像した映像信
号を読出す。また第３図には２次元撮像素子１１に撮像
管式ＴＶカメラを用いた場合を示す。撮像管式ＴＶカメ
ラには残像があり、これを除去するため映像信号読出し
後の次のフレームで残像の空読みをすることで、同様に
パターンを検出できる。上述のように、シャッタ１０の
開閉時間を任意に変更できる構成にすることにより、試
料５から反射してくる光量に応じて２次元撮像素子１１
の替像時間を調整でき。Since the shutter 10 is closed while the stage 6 is moving,
The two-dimensional image sensor 11 does not change the image of unnecessary reflected light from the sample 5. In the next frame after image replacement, the frame blanking signal is made readable, and the image signal that has been replaced is read out. Further, FIG. 3 shows a case where an image pickup tube type TV camera is used as the two-dimensional image pickup device 11. An image pickup tube type TV camera has an afterimage, and in order to remove this, a pattern can be detected in the same way by blankly reading the afterimage in the next frame after reading out the video signal. As described above, by configuring the opening/closing time of the shutter 10 to be arbitrarily changed, the two-dimensional imaging device 11 can be adjusted according to the amount of light reflected from the sample 5.
You can adjust the image change time.
常に高Ｓ／Ｎな映像信号を得ることができる。A video signal with a high S/N ratio can always be obtained.
また他の実施例として第４図は本発明のパターン検出方
法の検出時間の短縮方法を第３図の実施例に適用した場
合のタイミングチャートと映像信号を示す。第３図の方
法ではシャッタ１０が閉じた後、次のフレームで画像を
読み出すまでにＴ２の待ち時間が存在する。これをなく
すため第３図中に示すシャッタ１０が閉じた後の垂直同
期信号１２を、第４図中の垂直同期信号１２′のように
シャッタ１ｏを閉じる信号で強制的に同期をかける。こ
れによりパターン検出時間が短縮され、より高速なパタ
ーン検出が可能になる。これは第２図の実施例に適用可
能なことはいうまでもない。As another embodiment, FIG. 4 shows a timing chart and a video signal when the method for shortening the detection time of the pattern detection method of the present invention is applied to the embodiment of FIG. In the method shown in FIG. 3, there is a waiting time of T2 after the shutter 10 is closed until the image is read out in the next frame. In order to eliminate this, the vertical synchronizing signal 12 after the shutter 10 shown in FIG. 3 is closed is forcibly synchronized with a signal that closes the shutter 1o, like the vertical synchronizing signal 12' in FIG. 4. This reduces pattern detection time and enables faster pattern detection. It goes without saying that this is applicable to the embodiment shown in FIG.
本実施例では落射照明検出方法の場合について述べたが
、透過光検出や蛍光検出等地の検出方法についても適用
可能なことはいうまでもない、またシャッタ１０にはＰ
ＬＺＴシャッタを用いたが、液晶等地の電気光学シャッ
タや機械式シャッタ等用いることも可能である。Although the epi-illumination detection method has been described in this embodiment, it goes without saying that it is also applicable to ground detection methods such as transmitted light detection and fluorescence detection.
Although an LZT shutter is used, it is also possible to use an electro-optical shutter based on liquid crystal, a mechanical shutter, or the like.
以上説明したように、本発明によれば、微細パターンの
高速検出が可能になるので、微細パターンの光学的な拡
大像を利用する検査装置の検査時間を大幅に短縮できる
。As described above, according to the present invention, a fine pattern can be detected at high speed, so that the inspection time of an inspection apparatus that uses an optically enlarged image of a fine pattern can be significantly shortened.
第１図は本発明の一実施例の構成図、第２図は第１＠中
の２次元撮像素子として固体式ＴＶ左カメラ用いた場合
のタイミングチャート、第３図は第１図中の２次元撮像
素子として撮像管式ＴＶカメラを用いた場合のタイミン
グチャート、第４図は第３図に示す実施例の高速化手法
を説明するタイミングチャート。第５図は１次元リニア
センサを用いた従来例の説明図、第６図は撮像管式ＴＶ
カメラを用いた従来例の説明図、第７図は第６図に示す
従来例のタイミングチャート、第８図は照明方式による
検出光量の違いを示す説明図である。
１・・・連続点灯する光源、１７・・・ストロボ光源。
４・・・対物レンズ、５・・・試料、１０・・・シャッ
タ、１１第 １ 図
第２図
ステ−１１修ｐｔｇ号 ′ 島ｔ ４多ｔ〃
゛第３ 圓
ステージ′＃１′麿嘆ぢ 獅よ” 杉■紡 °゛
′第 ５ 図
／乙
第６ 灰
第７ 図Fig. 1 is a configuration diagram of an embodiment of the present invention, Fig. 2 is a timing chart when a solid-state TV left camera is used as the two-dimensional image sensor in Fig. A timing chart when an image pickup tube type TV camera is used as a dimensional image sensor, and FIG. 4 is a timing chart illustrating a method for increasing the speed of the embodiment shown in FIG. 3. Figure 5 is an explanatory diagram of a conventional example using a one-dimensional linear sensor, and Figure 6 is an image pickup tube type TV.
FIG. 7 is an explanatory diagram of a conventional example using a camera, FIG. 7 is a timing chart of the conventional example shown in FIG. 6, and FIG. 8 is an explanatory diagram showing the difference in detected light amount depending on the illumination method. 1... Light source that lights up continuously, 17... Strobe light source. 4...Objective lens, 5...Sample, 10...Shutter, 11 1st Figure 2 Sta-11 Modification No. 4'
゛3rd round stage'#1'Malou laments the lion'' Sugi ■Spinning °゛'Figure 5 / Otsu 6 Ash 7
Claims (1)
・停止を繰返し行うステージと、検出光学系と、２次元
撮像素子からなる顕微鏡装置において、検出光学系にシ
ャッタを挿入し、このシャッタをステージ及び２次元撮
像素子と同期して駆動するようにしたことを特徴とする
顕微鏡装置のパターン検出方法。1. In a microscope device consisting of an illumination system using a light source that lights up continuously, a stage that repeatedly moves and stops intermittently, a detection optical system, and a two-dimensional image sensor, a shutter is inserted into the detection optical system, and the shutter is inserted into the detection optical system. A pattern detection method for a microscope apparatus, characterized in that a shutter is driven in synchronization with a stage and a two-dimensional imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32694187A JPH01169305A (en) | 1987-12-25 | 1987-12-25 | Pattern detecting method of microscope apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32694187A JPH01169305A (en) | 1987-12-25 | 1987-12-25 | Pattern detecting method of microscope apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01169305A true JPH01169305A (en) | 1989-07-04 |
Family
ID=18193485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32694187A Pending JPH01169305A (en) | 1987-12-25 | 1987-12-25 | Pattern detecting method of microscope apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01169305A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014002354A1 (en) * | 2012-06-27 | 2014-01-03 | ソニー株式会社 | Microscope and shutter mechanism |
| WO2014078735A1 (en) * | 2012-11-16 | 2014-05-22 | Molecular Devices, Llc | System and method of acquiring images with a rolling shutter camera while asynchronously sequencing microscope devices |
| WO2016187549A1 (en) * | 2015-05-21 | 2016-11-24 | Invicro Llc | Multi-spectral three dimensional imaging system and method |
-
1987
- 1987-12-25 JP JP32694187A patent/JPH01169305A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014002354A1 (en) * | 2012-06-27 | 2014-01-03 | ソニー株式会社 | Microscope and shutter mechanism |
| CN104380170A (en) * | 2012-06-27 | 2015-02-25 | 索尼公司 | Microscope and shutter mechanism |
| JPWO2014002354A1 (en) * | 2012-06-27 | 2016-05-30 | ソニー株式会社 | Microscope and shutter mechanism |
| US9442281B2 (en) | 2012-06-27 | 2016-09-13 | Sony Corporation | Microscope and shutter mechanism |
| CN104380170B (en) * | 2012-06-27 | 2019-07-26 | 索尼公司 | Microscope and tripper |
| WO2014078735A1 (en) * | 2012-11-16 | 2014-05-22 | Molecular Devices, Llc | System and method of acquiring images with a rolling shutter camera while asynchronously sequencing microscope devices |
| CN104781717A (en) * | 2012-11-16 | 2015-07-15 | 分子装置有限公司 | System and method of acquiring images with a rolling shutter camera while asynchronously sequencing microscope devices |
| WO2016187549A1 (en) * | 2015-05-21 | 2016-11-24 | Invicro Llc | Multi-spectral three dimensional imaging system and method |
| US9799113B2 (en) | 2015-05-21 | 2017-10-24 | Invicro Llc | Multi-spectral three dimensional imaging system and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6693664B2 (en) | Method and system for fast on-line electro-optical detection of wafer defects | |
| US8285032B2 (en) | Inspection system and inspection method | |
| TWI586959B (en) | Automatic appearance inspection device | |
| US6583928B2 (en) | Microscope | |
| CN101889197A (en) | Inspecting apparatus and inspecting method | |
| JPS63243907A (en) | Automatic focus detector for microscope | |
| JPH01169305A (en) | Pattern detecting method of microscope apparatus | |
| JP4348455B2 (en) | Imaging device | |
| JP2000066107A (en) | Microscope | |
| JP2006112913A (en) | Defect inspection device | |
| EP1439385B1 (en) | Method and system for fast on-line electro-optical detection of wafer defects | |
| JP3314253B2 (en) | Inspection device for color filters for viewfinder | |
| JPH07128032A (en) | Method and apparatus for inspecting surface waviness of plate-shaped material | |
| JP2000162134A (en) | Surface inspecting device | |
| JP6906823B1 (en) | Mask inspection method and mask inspection equipment | |
| US5331368A (en) | Photomicrographic apparatus | |
| KR100971173B1 (en) | Method and system for fast on-line electro-optical detection of wafer defects | |
| JP2008292221A (en) | Defect inspection method and defect inspection device | |
| WO2006019446A2 (en) | Double inspection of reticle or wafer | |
| JPH09311108A (en) | Defect inspecting device and defect inspecting method | |
| JPH0979991A (en) | Pattern inspection device, defect inspection device, and pattern inspection method | |
| JPH0682381A (en) | Foreign matter inspection device | |
| JPS59232306A (en) | Focus detector for microscope | |
| JPH09250912A (en) | Pattern measurement device | |
| JP2001208694A (en) | Sample processing device and method and method of manufacturing for photomask |