JPH01165661U - - Google Patents

Info

Publication number

JPH01165661U

JPH01165661U JP6180288U JP6180288U JPH01165661U JP H01165661 U JPH01165661 U JP H01165661U JP 6180288 U JP6180288 U JP 6180288U JP 6180288 U JP6180288 U JP 6180288U JP H01165661 U JPH01165661 U JP H01165661U

Authority

JP

Japan

Prior art keywords

polycrystalline silicon

substrate

electrode metal

junction

silicon layer

Prior art date

1988-05-10

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 239000002184 metal Substances 0.000 claims description 3
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
• 239000000758 substrate Substances 0.000 claims description 2
• 239000004065 semiconductor Substances 0.000 claims 1
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 238000009792 diffusion process Methods 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1