JPH01165223A - Level shifter circuit - Google Patents

Abstract

PURPOSE:To reduce power consumption by constituting a circuit so as to obtain a voltage between the gate and the source of a Schottky junction type field effect transistor by the voltage drop of a resistor. CONSTITUTION:The voltage between the gate and the source of the Schottky junction type field effect transistor 113 can be obtained by the voltage drop of the resistor 132. Thereby, it is possible to set the drain current of the Schottky junction type field effect transistor 113 at a small current value, and to adjust the current value easily based on the resistance value of the resistor 132 and the size of the gate of the Schottky junction type field effect transistor 113. Also, at the time of floating an input terminal 11 (at the time of no signal), the input terminal 11 is set at an H level of -0.8V by the drain current of the Schottky junction type field effect transistor 113 and the resistor 131 so as to output an H level of 1.5V from an output terminal 13. In such a way, it is possible to obtain high input impedance, therefore, to use a driving capacity at a front stage effectively, then, to reduce the power consumption.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to ECL (Emitter Couple
d Logic) compatible gallium arsenide IC
In particular, the present invention relates to a level shifter circuit of a signal input section built into this IC.

BACKGROUND ART Conventionally, this type of level shifter is connected in series between a resistor /33°/3da that biases the input terminal and the N source terminals, as shown in Figure 3. Schottky junction field effect transistor ///

//2 and Schottky junction diodes /UI, /UNI, the input terminal // is connected to the gate of the Schottky junction field effect transistor ///,
Output terminal /3 is connected to the cathode side of Schottky junction diode l. Normally, the ECL output level is -/, 7±0. t(V), whereas the internal logic level of gallium arsenide C is 12, oV±O,y
(v) Therefore, it is necessary to convert the level using a level shifter. The function of this level shifter is to output an output signal in response to an input signal, which is in phase with the input signal and has a direct current of about 0. ri(V
) is to get a dropped signal. This includes the voltage drop between the gate and north of the Schottky junction field effect transistor (nearly 0 volts) and the forward voltage (about 0, 1/) of the Schottky junction diode /2/. )
This is achieved by

Also, when the input terminal is 70-T/G (no signal), the output terminal/3 is H level-8! (V), the input terminal/l resistor IJ, 3. /, set to (f(i level)-0,r(V)) by 31I.

The 181m point to be solved by the invention The above-mentioned conventional level shifter circuit has a resistance of 133°/3.
14K! t) The input terminal bias is set to H level, the input impedance of this level thick circuit is resistor /, 7.7 is R155, resistor /Jtt is R1
If it is 34.

R15511・R154 R13A 10R154. Therefore, in order to effectively use the driving capability of the previous stage that drives this level sick circuit, a high input impedance is required.

However, since the specific resistance of a gallium arsenide IC is generally small, several resistors are usually made for R133 and R134 in consideration of the space on the chip.

For this reason, the input impedance becomes low.

This puts a strain on the driving capacity of the front stage.

In addition, the conventional level thick circuit has a resistance/
Since there is a limit to the value of JJ, /J'l, the resistance /33
．． Since the bleeder current flowing through the / and 7 lines cannot be lowered below a certain limit, there is a drawback that there is a limit to the amount of K used to reduce the current consumption.

Yet again. The potential of output terminals i and t is resistance /, 7J, /
, 7G values.

The present invention has been made in view of the above-mentioned conventional situation,
SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a novel level shifter circuit which makes it possible to eliminate the above-mentioned disadvantages inherent in the conventional technology.

Means for Solving the Problems In order to achieve the above objects, the level shifter circuit according to the present invention provides a level shifter circuit according to the present invention, as shown in FIG. 1 or FIG. The first Schottky junction is a field effect transistor /// with an output terminal /3 at the midpoint. second Schottky junction reducing diode /co/,
/coco and the first Schottky junction field effect transistor l/co are connected in series.

The gate of the Schottky junction field effect transistor // is connected to the input terminal /l, and the Schottky junction field effect transistor //, ? is connected to the power supply terminal / through the resistor /, 7/. Furthermore, the drain of the Schottky junction field effect transistor //J is connected to the input terminal /l, the gate is connected directly to the power supply terminal lψ, and the source is connected to the resistor 13 or the Schottky junction diode l. The terminals are connected to the power supply terminals via J, respectively.

EXAMPLES Next, preferred embodiments of water-gold metal will be described in detail with reference to the drawings.

FIG. 1 is a circuit configuration diagram showing a first embodiment of the present invention.

Referring to Figure 1, in operation, when an input signal is applied to input terminal //, the output signal of output terminal /3 is in phase with the input signal and drops by about 0.7 (V) in DC terms. It becomes a signal. Here, the DC voltage shift of about 0.7 (V) between the input signal and the output signal is approximately 0 volts of the gate-source open voltage drop of the Schottky junction field effect transistor/ll and the Schottky junction diode 12. It is obtained by the forward voltage o, yV between the anodes and candes of /.

Since the gate-source voltage of the Schottky junction field effect transistor l13 is obtained by the voltage drop across the resistor lJ, the Schottky junction field effect transistor ii
The drain WIR of J can be set to a small current value, and the current value can be easily adjusted by the resistance value of the 13 resistors and the gate size of the Schottky junction field effect transistor l/J.

Also, when the input terminal // is 70-ting (when there is no signal), the Schottky junction field effect transistor //
The input terminal // becomes H due to the current and resistance /3/ of the drain of J.
Figure 82 is a circuit configuration diagram showing a fourth embodiment of the present invention.

As shown in FIG. 2, when an input signal is applied to the input terminal 6 and 6 output terminals 1 and 1 are
The output signal of No. 3 is in phase with the input signal and has a DC current of about O1 (
V) The signal becomes lower. Here, the DC voltage shift between the input signal and the output signal (0.7 V) is the Schottky junction field effect transistor whose gate-source voltage drop is approximately Ov. It is obtained by the forward voltage o, tV between the anode and cathode of the junction diode/coll.

Also, the forward voltage of the Schottky junction diode 3 is the Schottky junction field effect transistor //, 7
Set the gate-source voltage of 2.

The drain current of the Schottky junction field effect transistor 113 is set to a small value.

When the input terminal l/ is floating, the input terminal // is biased by the drain current of the Schottky junction field effect transistor //, 7 and the resistor /J/ so that the output terminal outputs H levels -i, rV. niH Lebel-o
, gV.

FIG. 3 is an explanatory diagram of a custom-made operation of the present invention shown in FIG. 1 or FIG. 2, as shown in FIG.

It can be seen that according to the present invention, almost the same customized operation as the conventional example shown in FIG. 3 can be obtained.

Effects of the Invention As explained above, according to the present invention, the input impedance of one circuit is determined by the parallel connection of the resistor /3/ and the drain resistance of the Schottky junction field effect transistor //3. Joint board field effect transistor //,? Since the drain resistance of is sufficiently large, the value of the input impedance is approximately set to the value of resistance/3/.

Further, as described above, the drain current of the Schottky junction field effect transistor l13 can be made small in the first embodiment, and in the second embodiment, the Schottky junction field effect transistor l13 can have a small current value. Since a smaller value can be set by the forward voltage of the resistor 3, it is possible to set the resistance to a value as high as resistance/J/. Therefore, the first aspect of the present invention. The circuit according to the third embodiment can obtain high input impedance.

Therefore, it becomes possible to effectively use the driving capacity of the previous stage, and the effect of reducing power consumption can be obtained.

Further, in the embodiment of tal, the resistor i3i.

Since the VT of the Schottky junction field effect transistor//J varies in a direction that cancels out the variation of the Schottky junction field effect transistor//J, an effect of being resistant to variation in resistance can be obtained.

[Brief explanation of the drawing]

Figure 1 shows the features of the present invention! Circuit configuration diagram showing an embodiment of /, second
FIG. 3 is a circuit configuration diagram showing a first embodiment of the present invention, FIG. 3 is a circuit operation characteristic diagram according to the present invention, and FIG. 3 is a configuration diagram of a conventional level thick circuit. No.! The figure is a diagram showing the poetic characteristics of the conventional 2 circuit. //...Input terminal, l, /lI...'kaigen terminal, /J...output terminal, /, 7/, /, l,
/33. /, 7 da...resistance, /11. //:2
゜／／、? ...Schottky junction field effect transistor. lco/, /coco, lcoco... Schottky junction field effect diode Figure 1 Figure 2

Claims (1)

[Claims] A first Schottky junction field effect transistor whose gate electrode is connected to an input terminal, first and second Schottky junction diodes whose connection point is an output terminal, and whose gate electrode is connected to a first power source. a second Schottky junction field effect transistor connected to the first power source and a second Schottky junction field effect transistor connected to the second Schottky junction field effect transistor;
In the level shifter circuit connected in series to a power source, the input terminal is connected to the first power source via a first resistor, a gate electrode is connected to the second power source, and a source electrode is connected to the first power source. connected to the second power source through a third Schottky junction field effect transistor connected to the second power source through a resistor or a third Schottky junction diode. level shifter circuit.