JPH01154511U - - Google Patents

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Publication number
JPH01154511U
JPH01154511U JP4961488U JP4961488U JPH01154511U JP H01154511 U JPH01154511 U JP H01154511U JP 4961488 U JP4961488 U JP 4961488U JP 4961488 U JP4961488 U JP 4961488U JP H01154511 U JPH01154511 U JP H01154511U
Authority
JP
Japan
Prior art keywords
recess
disk substrate
annular
peripheral edge
disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4961488U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4961488U priority Critical patent/JPH01154511U/ja
Publication of JPH01154511U publication Critical patent/JPH01154511U/ja
Pending legal-status Critical Current

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  • Magnetic Record Carriers (AREA)
JP4961488U 1988-04-13 1988-04-13 Pending JPH01154511U (en, 2012)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4961488U JPH01154511U (en, 2012) 1988-04-13 1988-04-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4961488U JPH01154511U (en, 2012) 1988-04-13 1988-04-13

Publications (1)

Publication Number Publication Date
JPH01154511U true JPH01154511U (en, 2012) 1989-10-24

Family

ID=31275702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4961488U Pending JPH01154511U (en, 2012) 1988-04-13 1988-04-13

Country Status (1)

Country Link
JP (1) JPH01154511U (en, 2012)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers

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