JPH01154511U - - Google Patents
Info
- Publication number
- JPH01154511U JPH01154511U JP4961488U JP4961488U JPH01154511U JP H01154511 U JPH01154511 U JP H01154511U JP 4961488 U JP4961488 U JP 4961488U JP 4961488 U JP4961488 U JP 4961488U JP H01154511 U JPH01154511 U JP H01154511U
- Authority
- JP
- Japan
- Prior art keywords
- recess
- disk substrate
- annular
- peripheral edge
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4961488U JPH01154511U (en, 2012) | 1988-04-13 | 1988-04-13 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4961488U JPH01154511U (en, 2012) | 1988-04-13 | 1988-04-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01154511U true JPH01154511U (en, 2012) | 1989-10-24 |
Family
ID=31275702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4961488U Pending JPH01154511U (en, 2012) | 1988-04-13 | 1988-04-13 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01154511U (en, 2012) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
-
1988
- 1988-04-13 JP JP4961488U patent/JPH01154511U/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7501344B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |