JPH01149468U - - Google Patents

Info

Publication number
JPH01149468U
JPH01149468U JP4632588U JP4632588U JPH01149468U JP H01149468 U JPH01149468 U JP H01149468U JP 4632588 U JP4632588 U JP 4632588U JP 4632588 U JP4632588 U JP 4632588U JP H01149468 U JPH01149468 U JP H01149468U
Authority
JP
Japan
Prior art keywords
compound semiconductor
single crystal
quartz boat
semiconductor single
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4632588U
Other languages
English (en)
Other versions
JPH069024Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4632588U priority Critical patent/JPH069024Y2/ja
Publication of JPH01149468U publication Critical patent/JPH01149468U/ja
Application granted granted Critical
Publication of JPH069024Y2 publication Critical patent/JPH069024Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】
第1図は本考案の化合物半導体製造装置の一実
施例を示す石英アンプル、石英ボートおよび変形
防止治具の配置を示す断面図、第2図は変形防止
治具の断面図である。 1:石英アンプル、2:石英ボート、3:変形
防止治具、4,5:可動連結部、6:GaAs融
液。

Claims (1)

  1. 【実用新案登録請求の範囲】 1 化合物半導体の一方の構成元素と種結晶を入
    れた石英ボートを他方の構成元素と共に石英アン
    プルに封入して前記化合物半導体の単結晶を育成
    する化合物半導体単結晶製造装置において、前記
    石英ボートの外側に、該石英ボートと相似の形状
    を有し底部に該底部を可動自在とする可動連結部
    を具え前記石英ボートを補強して熱変形を抑止す
    る変形防止治具が設けてあることを特徴とする化
    合物半導体単結晶製造装置。 2 前記変形防止治具は、炭化珪素(SiC)、
    窒化アルミニウム(AlN)、窒化珪素(Si
    )よりなる耐熱性セラミツクスを用いるもの
    である実用新案登録請求の範囲第1項記載の化合
    物半導体単結晶製造装置。
JP4632588U 1988-04-06 1988-04-06 化合物半導体単結晶製造装置 Expired - Lifetime JPH069024Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4632588U JPH069024Y2 (ja) 1988-04-06 1988-04-06 化合物半導体単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4632588U JPH069024Y2 (ja) 1988-04-06 1988-04-06 化合物半導体単結晶製造装置

Publications (2)

Publication Number Publication Date
JPH01149468U true JPH01149468U (ja) 1989-10-17
JPH069024Y2 JPH069024Y2 (ja) 1994-03-09

Family

ID=31272595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4632588U Expired - Lifetime JPH069024Y2 (ja) 1988-04-06 1988-04-06 化合物半導体単結晶製造装置

Country Status (1)

Country Link
JP (1) JPH069024Y2 (ja)

Also Published As

Publication number Publication date
JPH069024Y2 (ja) 1994-03-09

Similar Documents

Publication Publication Date Title
ATE82431T1 (de) Zusammengesetzte halbleiteranordnungen.
JPS55103439A (en) Semiconductor pressure sensor
EP0921214A4 (en) MONOCRYSTALLINE SILICON CARBIDE AND PREPARATION METHOD THEREOF
CA2030484A1 (en) Semiconductor pressure sensor and method for manufacturing the same
JPH01149468U (ja)
FI884158A0 (fi) Nya bornitridfoereningar.
JP2022131086A5 (ja)
JPS62142839U (ja)
JPH03103264U (ja)
JP2706272B2 (ja) 化合物半導体単結晶の成長方法
JPS5934150Y2 (ja) 圧力センサ−用半導体素子パツケ−ジ
FR2158634A5 (en) Hexagonal silicon carbide mfr - by sublimation in sealed crucible
JPH0310529U (ja)
JPS5934149Y2 (ja) 圧力センサ−用素子パツケ−ジ
Iwamoto et al. Joining of Silicon Nitride Ceramics With CaO--TiO sub 2--SiO sub 2 Glass Solder
JPS63123673U (ja)
JPS59135654U (ja) 半導体圧力変換器
JPH01116442U (ja)
JPS6430824U (ja)
JPS6265831U (ja)
JPS6245826U (ja)
JPH0378032U (ja)
JPS62154814U (ja)
JPS62180944U (ja)
JPH01149467U (ja)