JPH01148752A - Electric conductive ceramic - Google Patents
Electric conductive ceramicInfo
- Publication number
- JPH01148752A JPH01148752A JP62304607A JP30460787A JPH01148752A JP H01148752 A JPH01148752 A JP H01148752A JP 62304607 A JP62304607 A JP 62304607A JP 30460787 A JP30460787 A JP 30460787A JP H01148752 A JPH01148752 A JP H01148752A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- weight
- parts
- sintered body
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 28
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 16
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 11
- 229910052726 zirconium Inorganic materials 0.000 claims description 11
- 229910052580 B4C Inorganic materials 0.000 abstract description 32
- 239000004020 conductor Substances 0.000 abstract description 11
- 239000011810 insulating material Substances 0.000 abstract description 8
- 230000008018 melting Effects 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 6
- 239000010949 copper Substances 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 2
- 229910016384 Al4C3 Inorganic materials 0.000 abstract 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 abstract 2
- 229910033181 TiB2 Inorganic materials 0.000 abstract 2
- 229910007948 ZrB2 Inorganic materials 0.000 abstract 2
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000013329 compounding Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 30
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 239000011812 mixed powder Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 and further Chemical compound 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は導電性セラミックス、さらに特定すれば、窒化
アルミニウムを絶縁材料とする多層セラミック回路基板
の導体材料として利用できる導電性セラミックスに関し
、
熱伝導率が高い窒化アルミニウムを絶縁材料として一体
焼成できる、高融点であり、かつ電気抵抗が低い導体材
料を提供することを目的とし、ほう化ジルコニウム（Ｚ
ｒＢ２）および／またはほう化チタン（ＴｉＢ２）と、
炭化ほう素（Ｂ、４Ｃ）と、炭化アルミニウム（Ａ ｌ
２ｃｃ’ｓ”）とを含む導電性セラミックスであって、
該ＺｒＢ２および／またはＴｉＢｚと、Ｂ４Ｃとの合量
１００重量部に対して該＾（ｌａ０３を０．５〜１０重
量部を含み、かつ、８ｇＺｒＢｚおよび／またはＴｉＢ
ｚと、該Ｂ４Ｃとの重量比が８０〜９０対１０〜２０で
あるように構成する。[Detailed Description of the Invention] [Summary] The present invention relates to conductive ceramics, and more particularly, to conductive ceramics that can be used as conductive materials for multilayer ceramic circuit boards using aluminum nitride as an insulating material, and which have high thermal conductivity. With the aim of providing a conductive material with a high melting point and low electrical resistance that can be integrally fired with aluminum nitride as an insulating material, zirconium boride (Z
rB2) and/or titanium boride (TiB2),
Boron carbide (B, 4C) and aluminum carbide (Al
2cc's''),
Based on 100 parts by weight of the total amount of ZrB2 and/or TiBz and B4C, 8g of ZrBz and/or TiB
The weight ratio of z and the B4C is 80 to 90 to 10 to 20.
本発明は導電性セラミックス、さらに特定すれば窒化ア
ルミニウムを絶縁材料とする多層セラミック回路基板の
導体材料として利用できる導電性セラミックスに関する
。The present invention relates to conductive ceramics, and more particularly to conductive ceramics that can be used as conductive materials for multilayer ceramic circuit boards using aluminum nitride as an insulating material.
多層セラミック回路基板の導体材料としては電気抵抗が
低いことが望まれ、この点で銅が適当である。また絶縁
材料は熱伝導率が高いことが望まれ、アルミナは熱伝導
率が１７ｗ／ｍ−にであり、窒化アルミニウムは１８０
ｗ／ｍ−にとさらに高い。It is desired that the conductor material for the multilayer ceramic circuit board has low electrical resistance, and copper is suitable in this respect. It is also desirable that the insulating material has high thermal conductivity; alumina has a thermal conductivity of 17 w/m-, and aluminum nitride has a thermal conductivity of 180 w/m-.
Even higher, w/m-.
しかし、焼結温度がアルミナは約１５００℃、窒化アル
ミニウムは約１８００℃である。このような絶縁材料に
対して、銅は融点が１０８３℃であるので、一体焼結す
ることができない。従って従来は高融点金属としてタン
グステンまたはモリブデンを使用していた。しかしこれ
らの金属はシート抵抗がそれぞれ２５ｍΩ／口、１０〜
２０ｍΩ／口であって、銅の３ｍΩ／口より著しく高い
欠点がある。However, the sintering temperature is about 1500°C for alumina and about 1800°C for aluminum nitride. Copper cannot be integrally sintered with such an insulating material because its melting point is 1083°C. Therefore, conventionally, tungsten or molybdenum has been used as the high melting point metal. However, these metals have sheet resistances of 25mΩ/mouth and 10~
It has the disadvantage of 20 mΩ/hole, significantly higher than the 3 mΩ/hole of copper.
一般に、非酸化物系セラミックスは難焼結性という欠点
を存するが、遷移金属ほう化物は電気および熱の良導体
という、セラミックス中では異質の性質をもっている。In general, non-oxide ceramics have the disadvantage of being difficult to sinter, but transition metal borides have a unique property among ceramics: they are good electrical and thermal conductors.
この遷移金属ほう化物の焼結性を改良するために、炭化
ほう素と共焼結することが知られており、たとえばほう
化チタンＴｉＢｚ−炭化ほう素Ｂ４Ｃ系２相複合型セラ
ミックスは、従来のセラミックス中で硬度および強度が
著しく高く、かつ酸化抵抗性も大きい。In order to improve the sinterability of transition metal borides, it is known that they are co-sintered with boron carbide. For example, titanium boride TiBz-boron carbide B4C two-phase composite ceramics are It has extremely high hardness and strength among ceramics, and also has high oxidation resistance.
西山勝広は、ＴｉＢ２− Ｂ４Ｃ系２相複合型セラミッ
クスを焼結するときに、カーボンを少量添加して助剤と
することを紹介している（ＢＯＵＮＤＡＲＹ、１９８０
年３月号２４〜２７頁）。また渡辺忠彦、徳永洋−は、
ほう化チタンＴｉＢ２の焼結に、ＮｉＰや斜方晶系のＣ
ｏＢ ＋ ＦｅＢ ＋ Ｎ１ｔＢｓを使用するが．ほう
化ジルコニウムＺｒＢ＝の焼結については文献が少なく
て詳細は不明であることを紹介している（日本金属学会
会報第２５巻第１２号（１９８６） １０１８〜１０２
５頁）。Katsuhiro Nishiyama introduced the use of a small amount of carbon as an auxiliary agent when sintering TiB2-B4C two-phase composite ceramics (BOUNDARY, 1980).
(March issue, pages 24-27). Also, Tadahiko Watanabe and Hiroshi Tokunaga,
NiP and orthorhombic C are used for sintering titanium boride TiB2.
Although oB + FeB + N1tBs is used. Regarding the sintering of zirconium boride ZrB=, it is introduced that there are few documents and the details are unknown (Bulletin of the Japan Institute of Metals Vol. 25, No. 12 (1986) 1018-102
(page 5).
熱伝導率が高い窒化アルミニウムを絶縁材料として一体
焼成できる高融点であり、かつ電気抵抗が低い導体材料
を提供することを目的とする。It is an object of the present invention to provide a conductive material having a high melting point and low electrical resistance, which can be integrally fired with aluminum nitride having high thermal conductivity as an insulating material.
上記問題点は．ほう化ジルコニウム（ＺｒＢ２）および
／またはほう化チタン（ＴｉＢ２）と、炭化ほう素（８
４Ｃ）と、炭化アルミニウム（Ａ （ｌ ａｃｔ）とを
含む導電性セラミックスであって、該ＺｒＢ２および／
またはＴｉＢ２と、Ｂ４Ｃとの合量１００重量部に対し
、て該Ａ ｆｆ ４Ｃ３を０．５〜１０重量部を含み、
かつ、該ＺｒＢ２および／またはＴｉＢｚと、該Ｂ４Ｃ
との重量比が８０〜９０対１０〜２０であることを特徴
とする導電性セラミックスによって解決することができ
る。The above problem is. Zirconium boride (ZrB2) and/or titanium boride (TiB2) and boron carbide (8
4C) and aluminum carbide (A (l act)), the conductive ceramics containing ZrB2 and/or
or containing 0.5 to 10 parts by weight of the A ff 4C3 with respect to 100 parts by weight of the total amount of TiB2 and B4C,
and the ZrB2 and/or TiBz and the B4C
This can be solved by using conductive ceramics characterized by a weight ratio of 80 to 90 to 10 to 20.
本発明の導電性セラミックスは、三成分のうちの炭化ア
ルミニウムが、絶縁材料の窒化アルミニウムと結合しや
すく、炭化アルミニウムは炭化ほう素と、さらに炭化ほ
う素はほう化ジルコニウムまたはほう化チタンと結合し
やすい利点を有する。In the conductive ceramic of the present invention, among the three components, aluminum carbide easily combines with aluminum nitride, which is an insulating material, and aluminum carbide easily combines with boron carbide, and further, boron carbide combines with zirconium boride or titanium boride. It has the advantage of being easy to use.
こうして炭化アルミニウムは．ほう化ジルコニウムまた
はほう化チタンと、炭化ほう素どの密着性を向上させる
ことができ、さらに、熱膨張係数を窒化アルミニウムの
４． ’ＯＸ １０−６／ ｋに近づけることが可能で
ある。ＺｒＢ２および／またはＴｉＢｚに対する炭化ほ
う素の割合が１０重量比より少ないと焼結性が悪く、２
０重量比より多いと抵抗が高くなる。またＺｒＢ２およ
び／またはＴｉＢ２とＢ４Ｃとの合量１００重量部に対
して炭化アルミニウムが０．５重量部より少ないと密着
性が悪くなり、１０重量部より多いと抵抗が高くなる。Thus aluminum carbide. It is possible to improve the adhesion between zirconium boride or titanium boride and boron carbide, etc., and furthermore, the coefficient of thermal expansion is 4.5% higher than that of aluminum nitride. It is possible to approach 'OX 10-6/k. If the ratio of boron carbide to ZrB2 and/or TiBz is less than 10% by weight, sinterability is poor;
When the weight ratio is greater than 0, the resistance becomes high. Further, if the amount of aluminum carbide is less than 0.5 parts by weight with respect to 100 parts by weight of the total amount of ZrB2 and/or TiB2 and B4C, the adhesion will be poor, and if it is more than 10 parts by weight, the resistance will be high.
なお．ほう化ジルコニウムは融点が約３０４０°Ｃ１ま
たほう化チタンは融点が２８００℃と高いばかりでなく
、いずれも電気抵抗が６Ω・ｃｍと低いので、得られる
三成分焼結体のシート抵抗も銅に近い４ｍΩ／口を示す
。In addition. Zirconium boride has a melting point of approximately 3040°C1, and titanium boride not only has a high melting point of 2800°C, but also has a low electrical resistance of 6Ωcm, so the sheet resistance of the resulting three-component sintered body is also similar to that of copper. Showing close to 4 mΩ/mouth.
〔実施例１〕
ほう化ジルコニウムＺｒＢｚ粉末：炭化ほう素Ｂ４ｃ粉
末の重量比９０ ： １０の混合粉末１００重量部に対
して炭化アルミニウムＡ Ｅ ｎｃｉ粉末１０重量部を
添加し、Ｖ型混合機で乾式混合した。得られた三成分混
合物粉末１００ｇに、バインダ（ＰＭＭＡ） ２０ ｇ
と溶剤エタノール３０ｇとを混合し、らいかい機で混練
してペーストとし、これを窒化アルミニウムグリーンシ
ートにスクリーン印刷して翼体パターンを形成し、７０
℃で１５分間乾燥したものを１０層重ね、１５０℃で４
５ＭＰａに加圧して積層体とし、窒素雰囲気中で、６０
０°Ｃで４時間予備焼成し、続いて１８００℃で６時間
本焼成を行なって積層焼結体を得た。[Example 1] 10 parts by weight of aluminum carbide A Enci powder was added to 100 parts by weight of mixed powder with a weight ratio of zirconium boride ZrBz powder: boron carbide B4c powder of 90:10, and the mixture was dry-mixed using a V-type mixer. Mixed. 20 g of binder (PMMA) was added to 100 g of the obtained three-component mixture powder.
and 30 g of solvent ethanol were mixed and kneaded in a milling machine to form a paste, which was then screen printed on an aluminum nitride green sheet to form a wing body pattern.
Dry for 15 minutes at ℃, stack 10 layers, and dry at 150℃ for 4
It was pressurized to 5 MPa to form a laminate, and heated at 60° C. in a nitrogen atmosphere.
Preliminary firing was performed at 0°C for 4 hours, followed by main firing at 1800°C for 6 hours to obtain a laminated sintered body.
また、この三成分混合物粉末５ｇを、６０ＭＰａに加圧
して圧粉体とし、窒素雰囲気中で１８００℃で４時間焼
成して圧粉焼結体を得た。Further, 5 g of this three-component mixture powder was pressurized to 60 MPa to form a green compact, which was then fired at 1800° C. for 4 hours in a nitrogen atmosphere to obtain a compact sintered body.
〔実施例２つ
ほう化チタンＴｉＢｚ粉末：炭化ほう素Ｂ４Ｃ粉末の重
量比８０ ： ２０の混合粉末１００重景重量対して炭
化アルミニウムＡβ４Ｃ，ｌ粉末０．５重量部を添加し
たセラミック原料を使用したことの他は、実施例１と同
様にして、積層焼結体および圧粉焼結体を作製した。[Example 2] A ceramic raw material was used in which 0.5 part by weight of aluminum carbide Aβ4C,L powder was added to 100 parts by weight of a mixed powder with a weight ratio of titanium boride TiBz powder: boron carbide B4C powder of 80:20. Other than that, a laminated sintered body and a powder sintered body were produced in the same manner as in Example 1.
これらの積層焼結体の導体パターンのシート抵抗、およ
び圧粉焼結体の体積抵抗を測定した結果を第１表に示す
。Table 1 shows the results of measuring the sheet resistance of the conductor pattern of these laminated sintered bodies and the volume resistance of the compacted sintered body.
なお、比較のために、この三成分混合物粉末の代りに、
タングステン粉末を使用したペーストを導体とするセラ
ミック積層体、およびこのタングステン粉末を使用した
圧粉体をそれぞれ１８００℃で４時間焼成して焼結体を
得た。積層焼結体の導体層のシート抵抗、および圧粉焼
結体の体積抵抗を測定し、その結果も第１表に示す。For comparison, instead of this three-component mixture powder,
A ceramic laminate using a paste using tungsten powder as a conductor and a green compact using this tungsten powder were each fired at 1800° C. for 4 hours to obtain a sintered body. The sheet resistance of the conductor layer of the laminated sintered body and the volume resistance of the compacted sintered body were measured, and the results are also shown in Table 1.
実施例１および２の
導電性セラミックス ４６
タングステン ２５ ５本発明の導
電性セラミックス導体層はシート抵抗がタングステン層
の１／６であった。なお、ＺｒＢｚとＴｉＢｚとの合量
と、Ｂ４Ｃとの重量比が８０〜９０対１０〜２０であり
、ＺｒＢ、とＴｉＢｚとＢ４Ｃとの合量１００重量部に
対してＡ １ ｔｃ３０．５〜１０重量部を含む焼結体
も、実施例１と同様な結果を得た。The conductive ceramic conductor layers of Examples 1 and 2 46 Tungsten 25 5 The sheet resistance of the conductive ceramic conductor layers of the present invention was 1/6 that of the tungsten layer. Note that the weight ratio of the total amount of ZrBz and TiBz to B4C is 80 to 90 to 10 to 20, and A 1 tc is 30.5 to 10 with respect to 100 parts by weight of the total amount of ZrB, TiBz, and B4C. The same results as in Example 1 were obtained for the sintered body containing parts by weight.
〔実施例３〕
ほう化ジルコニウムＺｒＢｚ扮末：炭化ほう素Ｂ４Ｃ粉
末の重量比８０ ： ２０の混合粉末１００重量部に対
して炭化アルミニウムＡ Ｉ２４Ｃ３粉末１０重量部を
添加したことの他は、実施例１と同様にして、積層焼結
体および圧粉焼結体を作製した。[Example 3] Example 3 except that 10 parts by weight of aluminum carbide A I24C3 powder was added to 100 parts by weight of mixed powder of zirconium boride ZrBz powder: boron carbide B4C powder in a weight ratio of 80:20. A laminated sintered body and a compacted sintered body were produced in the same manner as in Example 1.
〔実施例４〕
ほう化ジルコニウムＺｒＢｚ粉末：炭化ほう素Ｂ４Ｃ粉
末の重量比９０ ： １０の混合粉末１００重量部に対
して炭化アルミニウムＡ １４．Ｃ：ｌ粉末０．５重量
部を添加したことの他は、実施例１と同様にして、積層
焼結体および圧粉焼結体を作製した。[Example 4] Aluminum carbide A was added to 100 parts by weight of mixed powder with a weight ratio of zirconium boride ZrBz powder to boron carbide B4C powder of 90:10. A laminated sintered body and a compacted sintered body were produced in the same manner as in Example 1, except that 0.5 parts by weight of C:l powder was added.
〔実施例５〕
ほう化ジルコニウムＺｒＢｚ粉末：炭化ほう素Ｂ４Ｃ粉
末の重量比８０ ： ２０の混合粉末１００重量部に対
して炭化アルミニウムＡＮＡ４Ｃ３粉末０．５重量部を
添加した、ことの他は、実施例１と同様にして積層焼結
体および圧粉焼結体を作製した。[Example 5] 0.5 parts by weight of aluminum carbide ANA4C3 powder was added to 100 parts by weight of mixed powder with a weight ratio of zirconium boride ZrBz powder: boron carbide B4C powder of 80:20. A laminated sintered body and a powder sintered body were produced in the same manner as in Example 1.
〔実施例６〕
ほう化チタンＴｉＢ２粉末：炭化ほう素Ｂ４Ｃ粉末の重
量比８０ ： ２０の混合粉末１００重量部に対して炭
化アルミニウムへβｔｃ３粉末１０重量部を添加したセ
ラミック原料を使用したことの他は、実施例１と同様に
して、積層焼結体および圧粉焼結体を作製した。[Example 6] In addition to using a ceramic raw material in which 10 parts by weight of βtc3 powder was added to aluminum carbide for 100 parts by weight of a mixed powder of titanium boride TiB2 powder: boron carbide B4C powder in a weight ratio of 80:20. A laminated sintered body and a compacted sintered body were produced in the same manner as in Example 1.
〔実施例７〕
ほう化チタンＴｉＢｚ粉末：炭化ほう素８４Ｃ粉末の重
量比９０ ： １０の混合粉末１００重量部に対して炭
化アルミニウムＡ １ ａ０３粉末０．５重量部を添加
したセラミック原料を使用したことの他は、実施例１と
同様にして、積層焼結体および圧粉焼結体を作製した。[Example 7] A ceramic raw material was used in which 0.5 parts by weight of aluminum carbide A 1 a03 powder was added to 100 parts by weight of a mixed powder of titanium boride TiBz powder: boron carbide 84C powder in a weight ratio of 90:10. Other than that, a laminated sintered body and a powder sintered body were produced in the same manner as in Example 1.
ほう化チタンＴｉＢｚ粉末：炭化ほう素８４Ｃ粉末の重
量比９０ ： １０の混合粉末１００重量部に対して炭
化アルミニウムＡ １２４ｃｔ粉末１０重量部を添加し
たセラミンク原料を使用したことの他は、実施例１と同
様にして、積層焼結体および圧粉焼結体を作製した。Example 1 except that a ceramic raw material was used in which 10 parts by weight of aluminum carbide A 124ct powder was added to 100 parts by weight of a mixed powder with a weight ratio of titanium boride TiBz powder: boron carbide 84C powder of 90:10. A laminated sintered body and a compacted sintered body were produced in the same manner as above.
実施例３〜８においても、実施例１．２と同様の結果を
得た。In Examples 3 to 8, the same results as in Example 1.2 were obtained.
本発明の導電性セラミックスは焼結温度が１８００℃と
高いにも拘らず、シート抵抗が銅とほぼ等しい利点を有
する。Although the conductive ceramic of the present invention has a high sintering temperature of 1,800° C., it has the advantage that its sheet resistance is almost equal to that of copper.
Claims (1)
ほう化チタン（ＴｉＢ＿２）と、 炭化ほう素（Ｂ＿４Ｃ）と、 炭化アルミニウム（Ａｌ＿４Ｃ＿３）とを含む導電性セ
ラミックスであって、 該ＺｒＢ＿２および／またはＴｉＢ＿２と、Ｂ＿４Ｃと
の合量１００重量部に対して該Ａｌ＿４Ｃ＿３を０．５
〜１０重量部を含み、 かつ、該ＺｒＢ＿２および／またはＴｉＢ＿２と、該Ｂ
＿４Ｃとの重量比が８０〜９０対１０〜２０であること
を特徴とする導電性セラミックス。1. A conductive ceramic containing zirconium boride (ZrB_2) and/or titanium boride (TiB_2), boron carbide (B_4C), and aluminum carbide (Al_4C_3), the ZrB_2 and/or TiB_2, B_4C and 0.5 parts by weight of Al_4C_3 per 100 parts by weight
~10 parts by weight, and the ZrB_2 and/or TiB_2 and the B
A conductive ceramic characterized by having a weight ratio of _4C to 80 to 90 to 10 to 20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62304607A JP2505833B2 (en) | 1987-12-03 | 1987-12-03 | Conductive ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62304607A JP2505833B2 (en) | 1987-12-03 | 1987-12-03 | Conductive ceramics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01148752A true JPH01148752A (en) | 1989-06-12 |
| JP2505833B2 JP2505833B2 (en) | 1996-06-12 |
Family
ID=17935041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62304607A Expired - Lifetime JP2505833B2 (en) | 1987-12-03 | 1987-12-03 | Conductive ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2505833B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113543503A (en) * | 2021-09-16 | 2021-10-22 | 新恒汇电子股份有限公司 | Preparation method of novel carrier band with conductive ceramic coating |
-
1987
- 1987-12-03 JP JP62304607A patent/JP2505833B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113543503A (en) * | 2021-09-16 | 2021-10-22 | 新恒汇电子股份有限公司 | Preparation method of novel carrier band with conductive ceramic coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2505833B2 (en) | 1996-06-12 |
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