JPH01147458A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPH01147458A JPH01147458A JP62305633A JP30563387A JPH01147458A JP H01147458 A JPH01147458 A JP H01147458A JP 62305633 A JP62305633 A JP 62305633A JP 30563387 A JP30563387 A JP 30563387A JP H01147458 A JPH01147458 A JP H01147458A
- Authority
- JP
- Japan
- Prior art keywords
- phase difference
- photomask
- pattern
- changing
- difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005286 illumination Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims 2
- 230000010363 phase shift Effects 0.000 abstract description 7
- 230000004304 visual acuity Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は縮小投影露光装置で使用するホトマスク（レテ
ィクル）の改良に保り１％に微細パターンを１段差を有
するウエーノ・面上の異なるフォーカス位置に同時に転
写するのに好適なホトマスクに関する。Detailed Description of the Invention [Industrial Field of Application] The present invention is an improvement of a photomask (reticle) used in a reduction projection exposure apparatus, and a wafer with a fine pattern of 1% and a wafer surface having a step difference. The present invention relates to a photomask suitable for simultaneous transfer to positions.
半導体系子等の原画が描かれたホトマスク（以下レティ
クルと称す。）を照明系で照明し、レティクル上のパタ
ーンをウェーハ上に転写する縮小投影露光装置には、転
写可能なパターンが微細化できることと焦点裕度が大き
いこととが要求される。パターンの微細化かできること
、すなわち解像力を向上させる一手法として、レティク
ル上の隣接する開口部分を透過する照明光に位相差を与
えればよいことが知られている。従来、照明光に位相差
を与えるレティクルについては、アイ・イー・イー・イ
ー、トランサクション オン エレクトロン デバイス
（ＩＥＥＥ 、 Ｔｒａｎｓ 、 ｏｎ Ｅｌｅ −ｃ
ｔｒｏｎ ｐｅｖｉｃｅｓ ）、 Ｖａｔ Ｅ
Ｄ −２９、Ａ １２ （１９８２！４．）ｐ［ｓｚ
〜における文献に論じられている。A reduction projection exposure device that illuminates a photomask (hereinafter referred to as a reticle) with an original image of a semiconductor device, etc. with an illumination system and transfers the pattern on the reticle onto a wafer has the ability to miniaturize the pattern that can be transferred. and a large focal latitude are required. It is known that one method for making patterns finer, that is, improving resolution, is to provide a phase difference to illumination light that passes through adjacent openings on a reticle. Conventionally, regarding reticles that give a phase difference to illumination light, there are
tron pevices), Vat E
D-29, A 12 (1982!4.) p[sz
Discussed in the literature.
本文献で提案しているレティクルは、隣接する開口部分
を透過する照明光に１８０°の位相差を与えるものであ
り１周期的なパターンの解像力を向上させている。一方
、特願昭６０−２０６６６５に記載のレティクルは、単
独では解像しない開ロバターンに位相差を与えてこれを
補助パターンとし。The reticle proposed in this document gives a 180° phase difference to illumination light transmitted through adjacent apertures, improving the resolution of one periodic pattern. On the other hand, in the reticle described in Japanese Patent Application No. 60-206665, a phase difference is given to an open pattern that cannot be resolved by itself, and this is used as an auxiliary pattern.
転写すべき孤立したパターンの解像力を向上させている
。しかし、いずれの場合も焦点裕度については考慮さｒ
していない。The resolution of isolated patterns to be transferred is improved. However, in both cases, the focus latitude is not taken into account.
I haven't.
実際の半導体菓子製造工程では、１〜２μｍの段差があ
るウェーハ面上の全領域にわたって微細パターン？転写
する必要がある。しかし、従来の照明光に位相差を与え
るレティクルは、異なるフォーカス位置に同時にパター
ンを形成する点については考慮されていない。In the actual semiconductor confectionery manufacturing process, is there a fine pattern over the entire area on the wafer surface that has a step difference of 1 to 2 μm? Needs to be transcribed. However, conventional reticles that provide a phase difference to illumination light do not take into account the ability to simultaneously form patterns at different focus positions.
本発明の目的は、実際の露光工程に現われるような段差
があり異なるフォーカス位［−；Ｎするウェーハ面の全
領域にわたって微細パターンを転写できるようなレティ
クルを提供することにある。An object of the present invention is to provide a reticle that can transfer a fine pattern over the entire area of a wafer surface with steps and different focus positions [-;N, which appear in an actual exposure process.
上記目的は、隣接する開口部分を透過する照明光に位相
差金与えるレティクルにおいて、その位相差を露光領域
内の異なるフォーカス位置に対応して変化させることに
より、達成される。The above object is achieved by changing the phase difference in a reticle that provides a phase difference to the illumination light transmitted through adjacent openings in accordance with different focus positions within the exposure area.
レティクル上の隣接する開口部を透過する照明光に位相
差を与えることによジ、解像力が向上する。このとき１
位相差を１８０°とすると、正しいフォーカス位置での
解像力が最もよく向上する。By providing a phase difference to the illumination light transmitted through adjacent apertures on the reticle, resolving power is improved. At this time 1
When the phase difference is 180°, the resolution at the correct focus position is best improved.
位相差を１８０６より小さくすると解像力が最も良く向
上する面は正しいフォーカス位置ニジ縮小Ｖンズに近い
万へ移動し１位相差を１８０°よジ大きくすると逆の方
へ移動する。位相差を変化させることにより、最良像面
の位置が変化するので、この変化量をウェーハの段差に
対応てせて設定すれば、各フォーカス位置に同時に微細
パターンを転写することが可能となる。When the phase difference is made smaller than 180°, the plane where the resolution is best improved moves to the correct focus position, which is close to the reduced lens, and when the phase difference is increased by more than 180°, it moves in the opposite direction. By changing the phase difference, the position of the best image plane changes, so if the amount of change is set in accordance with the level difference of the wafer, it becomes possible to transfer a fine pattern to each focus position at the same time.
以下、本発明を実施例を用いて説明する。第１図は、本
発明を通用したレティクルの断面と開口部分を透過する
照明光の位相差を示した図である。The present invention will be explained below using examples. FIG. 1 is a diagram showing a cross section of a reticle that is used in the present invention and a phase difference of illumination light transmitted through an aperture.
同図Ａはガラス基板１上にＣｒ等から成る遮光膜３を設
け、開口部の一部分に照明光の位相差を与える位相シフ
ト層２を設けたものである。同図Ｂは、ガラス基板１と
遮光膜３との間に位相シフト層２を設けたものである。In FIG. 1A, a light shielding film 3 made of Cr or the like is provided on a glass substrate 1, and a phase shift layer 2 for providing a phase difference of illumination light is provided in a portion of the opening. In FIG. 1B, a phase shift layer 2 is provided between a glass substrate 1 and a light shielding film 3.
いずれの場合も、開口部４，５．６が転写すべき微細パ
ターンでるる。In either case, the openings 4, 5.6 provide the fine pattern to be transferred.
七れぞれの両側のパターン４−１．４−２．５−１゜５
−２および６−１．６−２の幅は単独では露光装置によ
っても解像しないような小さな値となっており、かつ同
図Ｃに示すような異なる位相差を与えるように位相シフ
ト層２の厚さがそれぞれ異なっている。すなわち開ロバ
ターン４−１．４−２は１５０°の位相差を、パターン
５−１．５−２は１８０°の位相差を、パターン６−１
．６−２は２１０°の位相差を与える。Pattern 4-1.4-2.5-1゜5 on both sides of each
The widths of -2 and 6-1.6-2 are so small that they cannot be resolved by an exposure device when used alone, and the phase shift layer 2 The thickness of each is different. That is, the open pattern 4-1.4-2 has a phase difference of 150°, the pattern 5-1.5-2 has a phase difference of 180°, and the pattern 6-1 has a phase difference of 180°.
．． 6-2 gives a phase difference of 210°.
第２図は、転写すべき開ロバターンの中央位置での光強
度分布のフォーカス位置依存性を示す図である。この例
では露光条件として、波長λ＝３６５１１ｍ、縮小レン
ズの開ロ数ＮＡ＝０．４．−１７ヒーレント照明を仮定
し、転写すべきパターン寸法は０．５μｍ口とした。パ
ターン中央位置の光強度は、解像力を表わすひとつの目
安でろシ、これが犬さいほど解１家力が高いことになる
。第２図の３本の曲線７，８．９から１位相差を１８０
°としたときの最良像面と比較して、位相差を２１００
とするど蚊良壇面は約１μｍ移動し、位相差を１５００
とすると最良像面は約−１／Ｌｍ移動することがわかる
。以上から１例えば２μｍの幅の段麦を有するウェーハ
面上にパターンを転写する場合、谷フォーカス位置に対
応式せて位相差を１５００〜２１０°に変化させること
により露光領域全体にわたって微細パターン全形成する
ことができる。FIG. 2 is a diagram showing the focus position dependence of the light intensity distribution at the center position of the open pattern to be transferred. In this example, the exposure conditions are: wavelength λ = 36511 m, numerical aperture NA = 0.4. -17 heat illumination was assumed, and the pattern size to be transferred was set to 0.5 μm. The light intensity at the center of the pattern is a measure of resolution; the smaller the image, the higher the resolution. One phase difference is 180 from the three curves 7, 8.9 in Figure 2.
The phase difference is 2100 degrees compared to the best image plane when
Then, the mosquito ridge surface moves about 1 μm and the phase difference becomes 1500
It can be seen that the best image plane moves by about -1/Lm. From the above, 1. For example, when transferring a pattern onto a wafer surface having a step width of 2 μm, by changing the phase difference from 1500 to 210 degrees in accordance with the valley focus position, a fine pattern can be completely formed over the entire exposure area. can do.
第１図に示すレティクルの例でｆよ、パターン５の最良
像面位置に対してパターン４は約１μｍ高い面上に、ま
た、パターン６は約１μｍ低い面上にそれぞれ形成でき
る、すなわち、露光領域内のウェーハ１０の段面が第３
囚に示すような段差がある場合に各領域１１，１２．１
３に、それぞれしティクルバター７４．５．６を精度よ
く転写することができる。In the example of the reticle shown in FIG. The step surface of the wafer 10 within the area is the third
If there is a difference in level as shown in the figure, each area 11, 12.1
3, Tickle Butter 74.5.6 can be transferred with high precision.
位相差を変える手段としては１位相シフト層２の厚さを
変える方法や、厚δを一定にしておいて異なる屈折率の
ＪＷＩを設ける方法等が有効である。Effective means for changing the phase difference include changing the thickness of one phase shift layer 2, and providing JWIs with different refractive indexes while keeping the thickness δ constant.
本発明によれば１位相シフト層を透過する照明光の位相
差を変えることによりホトマスク上のパターンの最良像
面位置を変化させることができるので、大きな段差を有
するウェーハに対してもすべてのフォーカス位置におい
て同時に微、ｌｌ［ｌｌ ハターン全転写することがで
きるという効果がある。According to the present invention, it is possible to change the best image plane position of a pattern on a photomask by changing the phase difference of the illumination light that passes through one phase shift layer. This has the effect of being able to simultaneously perform fine, ll[ll, and full transcribed transfers at different positions.
第１図は本発明の一実施例を示すレティクル断面および
位相差の対応説明図、第２図は位相差を変えることによ
シ最良像面が変化することを示す図、第３図は段差を有
するウェーハ断面図である。
１・・・カラス基板、２・・・位相シフト層、３・・・
遮光膜。
４．５．６・・・転写すべき開ロバターン、４−１゜４
−２・・・位相差１５０°を与える開口部、５−１゜５
−２・・・位相差１８０°を与える開ロノ（ターン。
６−１．６−２・・・位相差２１０°を与える開ロノく
ターン、７・・・位相差が１５０°のときの）（ターン
甲七元強度、８・・・位相差が１８０°のときの／（タ
ーン中心光強度、９・・・位相差が２１０°のときのパ
ターン中心光強度、１０・・・段差を有するウエーノゝ
ＯFig. 1 is an explanatory diagram showing the correspondence between a reticle cross section and a phase difference showing one embodiment of the present invention, Fig. 2 is a diagram showing that the best image plane changes by changing the phase difference, and Fig. 3 is a step difference diagram. FIG. 1... Glass substrate, 2... Phase shift layer, 3...
Light-shielding film. 4.5.6... Open pattern to be transferred, 4-1°4
-2...Aperture giving a phase difference of 150°, 5-1°5
-2... Open rono turn that gives a phase difference of 180°. 6-1.6-2... Open rono turn that gives a phase difference of 210°, 7... When the phase difference is 150°) (Turn A seven-dimensional intensity, 8.../(Turn center light intensity when the phase difference is 180°, 9...Pattern center light intensity when the phase difference is 210°, 10...Has a step) Ueno O
Claims (1)
るホトマスクにおいて、該位相差が、該ホトマスクの複
数の領域において異なる値であることを特徴とするホト
マスク。 ２、上記位相差を、上記ホトマスク上のパターンを転写
するウェーハ上の段差に依存した異なるフォーカス位置
に対応させて変化させることを特徴とする第１項記載の
ホトマスク。 ３、位相差を変化させる手段として、位相差を与える薄
膜層の厚さを変化させることを特徴とする特許請求の範
囲第１項記載のホトマスク。 ４、位相差を変化させる手段として、屈折率の異なる薄
膜層を設けることを特徴とする特許請求の範囲第１項記
載のホトマスク。Claims: 1. A photomask that provides a phase difference to illumination light transmitted through adjacent openings, wherein the phase difference has different values in a plurality of regions of the photomask. 2. The photomask according to item 1, wherein the phase difference is changed in accordance with different focus positions depending on steps on the wafer onto which the pattern on the photomask is transferred. 3. The photomask according to claim 1, wherein the means for changing the phase difference is changing the thickness of a thin film layer that provides the phase difference. 4. The photomask according to claim 1, wherein thin film layers having different refractive indexes are provided as means for changing the phase difference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30563387A JP2564337B2 (en) | 1987-12-04 | 1987-12-04 | Mask and pattern transfer method and semiconductor integrated circuit manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30563387A JP2564337B2 (en) | 1987-12-04 | 1987-12-04 | Mask and pattern transfer method and semiconductor integrated circuit manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01147458A true JPH01147458A (en) | 1989-06-09 |
| JP2564337B2 JP2564337B2 (en) | 1996-12-18 |
Family
ID=17947480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30563387A Expired - Fee Related JP2564337B2 (en) | 1987-12-04 | 1987-12-04 | Mask and pattern transfer method and semiconductor integrated circuit manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2564337B2 (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03252659A (en) * | 1990-03-01 | 1991-11-11 | Mitsubishi Electric Corp | Photomask |
| JPH03267940A (en) * | 1989-04-28 | 1991-11-28 | Fujitsu Ltd | Mask production thereof and pattern forming method using mask |
| WO1991020018A1 (en) * | 1990-06-21 | 1991-12-26 | Oki Electric Industry Co., Ltd. | Mask for shifting phase |
| JPH04212154A (en) * | 1990-08-18 | 1992-08-03 | Mitsubishi Electric Corp | Photomask |
| JPH04216553A (en) * | 1990-12-18 | 1992-08-06 | Mitsubishi Electric Corp | Mask for production of semiconductor |
| US5358807A (en) * | 1988-11-22 | 1994-10-25 | Hitachi, Ltd. | Mask for manufacturing semiconductor device and method of manufacture thereof |
| US5384218A (en) * | 1992-03-31 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Photomask and pattern transfer method for transferring a pattern onto a substrate having different levels |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| US5414746A (en) * | 1991-04-22 | 1995-05-09 | Nippon Telegraph & Telephone | X-ray exposure mask and fabrication method thereof |
| US5415951A (en) * | 1992-04-27 | 1995-05-16 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a photomask comprising a phase shifter with a stepped edge |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| US5427876A (en) * | 1992-04-28 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a photomask |
| US5455144A (en) * | 1990-03-20 | 1995-10-03 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5472811A (en) * | 1993-01-21 | 1995-12-05 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5641609A (en) * | 1993-11-11 | 1997-06-24 | Nec Corporation | Method for manufacturing pattern layer having different minimum feature sizes |
| US5644381A (en) * | 1994-07-11 | 1997-07-01 | Mitsubishi Denki Kabushiki Kaisha | Method of exposure employing phase shift mask of attenuation type |
| JP2006292840A (en) * | 2005-04-06 | 2006-10-26 | Advanced Lcd Technologies Development Center Co Ltd | Exposure method and halftone phase shift mask |
| JP2014165398A (en) * | 2013-02-26 | 2014-09-08 | Toshiba Corp | Focus position adjustment apparatus, reticle, focus position adjustment program and method of manufacturing semiconductor device |
| JPWO2014111983A1 (en) * | 2013-01-21 | 2017-01-19 | パナソニックＩｐマネジメント株式会社 | Photomask and pattern forming method using the same |
-
1987
- 1987-12-04 JP JP30563387A patent/JP2564337B2/en not_active Expired - Fee Related
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6733933B2 (en) | 1988-11-22 | 2004-05-11 | Renesas Technology Corporation | Mask for manufacturing semiconductor device and method of manufacture thereof |
| US5358807A (en) * | 1988-11-22 | 1994-10-25 | Hitachi, Ltd. | Mask for manufacturing semiconductor device and method of manufacture thereof |
| US5786115A (en) * | 1989-04-28 | 1998-07-28 | Fujitsu Limited | Mask producing method |
| JPH03267940A (en) * | 1989-04-28 | 1991-11-28 | Fujitsu Ltd | Mask production thereof and pattern forming method using mask |
| US5624791A (en) * | 1989-04-28 | 1997-04-29 | Fujitsu Ltd. | Pattern forming method using mask |
| US5674646A (en) * | 1989-04-28 | 1997-10-07 | Fujitsu Ltd. | Mask producing method |
| JPH03252659A (en) * | 1990-03-01 | 1991-11-11 | Mitsubishi Electric Corp | Photomask |
| US6794118B2 (en) | 1990-03-20 | 2004-09-21 | Renesas Technology Corp. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US6309800B1 (en) * | 1990-03-20 | 2001-10-30 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US6153357A (en) * | 1990-03-20 | 2000-11-28 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5753416A (en) * | 1990-03-20 | 1998-05-19 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5667941A (en) * | 1990-03-20 | 1997-09-16 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5455144A (en) * | 1990-03-20 | 1995-10-03 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| WO1991020018A1 (en) * | 1990-06-21 | 1991-12-26 | Oki Electric Industry Co., Ltd. | Mask for shifting phase |
| US5342713A (en) * | 1990-06-21 | 1994-08-30 | Oki Electric Industry Co., Ltd. | Phase shifting mask |
| US5455130A (en) * | 1990-08-18 | 1995-10-03 | Mitsubishi Denki Kabushiki Kaisha | Photomask comprising an optical path adjusting film |
| JPH04212154A (en) * | 1990-08-18 | 1992-08-03 | Mitsubishi Electric Corp | Photomask |
| JPH04216553A (en) * | 1990-12-18 | 1992-08-06 | Mitsubishi Electric Corp | Mask for production of semiconductor |
| US5414746A (en) * | 1991-04-22 | 1995-05-09 | Nippon Telegraph & Telephone | X-ray exposure mask and fabrication method thereof |
| US5384218A (en) * | 1992-03-31 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Photomask and pattern transfer method for transferring a pattern onto a substrate having different levels |
| US5415951A (en) * | 1992-04-27 | 1995-05-16 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a photomask comprising a phase shifter with a stepped edge |
| US5427876A (en) * | 1992-04-28 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a photomask |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| US5472811A (en) * | 1993-01-21 | 1995-12-05 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| US5641609A (en) * | 1993-11-11 | 1997-06-24 | Nec Corporation | Method for manufacturing pattern layer having different minimum feature sizes |
| US5644381A (en) * | 1994-07-11 | 1997-07-01 | Mitsubishi Denki Kabushiki Kaisha | Method of exposure employing phase shift mask of attenuation type |
| JP2006292840A (en) * | 2005-04-06 | 2006-10-26 | Advanced Lcd Technologies Development Center Co Ltd | Exposure method and halftone phase shift mask |
| JPWO2014111983A1 (en) * | 2013-01-21 | 2017-01-19 | パナソニックＩｐマネジメント株式会社 | Photomask and pattern forming method using the same |
| JP2014165398A (en) * | 2013-02-26 | 2014-09-08 | Toshiba Corp | Focus position adjustment apparatus, reticle, focus position adjustment program and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2564337B2 (en) | 1996-12-18 |
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