JPH01145554A - Heat treatment apparatus by laser - Google Patents
Heat treatment apparatus by laserInfo
- Publication number
- JPH01145554A JPH01145554A JP87305278A JP30527887A JPH01145554A JP H01145554 A JPH01145554 A JP H01145554A JP 87305278 A JP87305278 A JP 87305278A JP 30527887 A JP30527887 A JP 30527887A JP H01145554 A JPH01145554 A JP H01145554A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mirror
- laser
- laser beam
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims description 17
- 238000003384 imaging method Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 26
- 238000000034 method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Recrystallisation Techniques (AREA)
- Lasers (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Laser Beam Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、レーザ熱処理装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a laser heat treatment apparatus.
（従来の技術）
半導体製造において、被処理基板例えば半導体ウェハに
不純物をイオン注入した後、上記半導体ウェハの結晶損
傷の回復および注入された上記不純物の活性化等のため
に、熱処理例えばレーザビームを利用したレーザ熱処理
を行うレーザ熱処理装置が使用されることがある。(Prior Art) In semiconductor manufacturing, after impurity ions are implanted into a substrate to be processed, such as a semiconductor wafer, heat treatment, such as a laser beam, is performed to recover crystal damage in the semiconductor wafer and activate the implanted impurity. A laser heat treatment apparatus that performs laser heat treatment using a laser heat treatment method may be used.
その際、半導体ウェハに形成された酸化硅素（ｓｉｏ２
） ｒＭが反射防止作用を有し、この膜の厚さによって
レーザビームの入射パワーを制御できることを利用して
、熱処理所望領域には最大パワーで不所望領域には最小
パワーで入射されるように上記酸化硅素膜が反射防止膜
として配置されることが行なわれている。At that time, silicon oxide (sio2) was formed on the semiconductor wafer.
) rM has an anti-reflection effect, and by utilizing the fact that the incident power of the laser beam can be controlled by the thickness of this film, the maximum power is applied to the desired area for heat treatment, and the minimum power is applied to the undesired area. The silicon oxide film is often disposed as an antireflection film.
そして、第２図に示すように被モニター物である半導体
ウェハ１上に形成された反射防止膜２の並びと、レーザ
ビームの走査ライン３との平行度を観察するのに撮像装
置例えばテレビカメラ４を使用してモニターし、上記平
行度を調整することが一般に行われている。As shown in FIG. 2, an imaging device such as a television camera is used to observe the parallelism between the alignment of the anti-reflection films 2 formed on the semiconductor wafer 1, which is the object to be monitored, and the scanning line 3 of the laser beam. 4 to monitor and adjust the parallelism.
（発明が解決しようとする問題点）
しかしながら、テレビカメラで直接半導体ウェハをモニ
ターするレーザ熱処理装置には次に述べるような問題が
ある。(Problems to be Solved by the Invention) However, a laser heat treatment apparatus that directly monitors a semiconductor wafer with a television camera has the following problems.
ｌ）一般に半導体ウェハは処理室内に配置されており、
また他の機構との関係により、テレビカメラを上記半導
体ウェハに近づけることが困雅である。l) Generally, semiconductor wafers are placed in a processing chamber,
Furthermore, due to the relationship with other mechanisms, it is difficult to bring the television camera close to the semiconductor wafer.
２）半導体ウェハの前面にはレーザビームの走査機構等
が配置されているのが普通であり、半導体ウェハの正面
方向からテレビカメラでモニターするのは難しい。斜め
方向からモニターすると、半導体ウェハ上のモニター面
が狭くなり解像度が低下するので、反射防止膜とレーザ
ビームの走査ラインとの平行度調整精度が低くなる。2) Normally, a laser beam scanning mechanism and the like are arranged in front of the semiconductor wafer, and it is difficult to monitor the semiconductor wafer from the front with a television camera. When monitoring from an oblique direction, the monitor surface on the semiconductor wafer becomes narrower and the resolution is lowered, resulting in lower accuracy in adjusting the parallelism between the antireflection film and the scanning line of the laser beam.
３） モニター領域を変えるためには、テレビカメラ本
体を動かさなければならず、テレビカメラの取着移動機
構が複雑となる。3) In order to change the monitor area, the television camera body must be moved, making the mechanism for attaching and moving the television camera complicated.
４） 上記により、レーザビームの走査が不確実になり
やすく、熱処理特性が劣る可能性がある。4) Due to the above, the scanning of the laser beam tends to become uncertain, and the heat treatment characteristics may be deteriorated.
本発明は上述の従来事情に対処してなされたもので、高
精度のレーザビーム走査が可能なレーザ熱処理装置を提
供しようとするものである。The present invention has been made in response to the above-mentioned conventional situation, and is intended to provide a laser heat treatment apparatus capable of highly accurate laser beam scanning.
（問題点を解決するための手段）
すなわち本発明は、レーザ光による被処理状態の像を鏡
で反射させ、上記部の反射光を撮像装置でモニターする
手段を備えたことを特徴とする。(Means for Solving the Problems) That is, the present invention is characterized in that it includes means for reflecting an image of a state to be processed by a laser beam with a mirror and monitoring the reflected light from the above portion with an imaging device.
（作 用）
本発明レーザ熱処理装置では、レーザ光による被処理状
態の像を鏡で反射させて撮像モニターするので、容易に
正確にレーザ光による被処理状態をモニターすることが
可能となり、高精度でレーザビームを走査し熱処理を行
うことができる。(Function) In the laser heat treatment apparatus of the present invention, since the image of the state to be treated by the laser beam is reflected by a mirror and monitored, it is possible to easily and accurately monitor the state to be treated by the laser beam, resulting in high precision. Heat treatment can be performed by scanning a laser beam.
（実施例）
以下、本発明レーザ熱処理装置の一実施例を図面を参照
して説明する。(Example) Hereinafter, an example of the laser heat treatment apparatus of the present invention will be described with reference to the drawings.
上チヤンバ−（１１）と下チヤンバ−（１２）からなる
処理室（１３）の内部には被モニター物例えば半導体ウ
ェハ（１４）を下面側にて吸着保持するサセプタ（１５
）が設けられている。そして、このサセプタ（１５）は
上チヤンバ−（１１）上面に設けられた開口（１６）上
部に取着された石英窓（１７）を通して、上チヤンバ−
（１１）上に配置された赤外線ランプ（１８）の輻射熱
により加熱される如く構成されている。Inside the processing chamber (13) consisting of an upper chamber (11) and a lower chamber (12), there is a susceptor (15) that holds an object to be monitored, such as a semiconductor wafer (14), by suction on the lower surface side.
) is provided. This susceptor (15) is inserted into the upper chamber (11) through an opening (16) provided on the upper surface thereof and a quartz window (17) attached to the upper part thereof.
(11) It is configured to be heated by the radiant heat of an infrared lamp (18) placed above.
一方、下チヤンバ−（１２）は移動機構（図示せず）に
より下降し上チヤンバ−（１１）との間に開口（１９）
を設け、また下面側に設けられた開口（２０）に取着さ
れた石英窓（２１）を通して、ガルバノミラ−（２２）
により左右方向、Ｆ・θレンズ（２３）により紙面垂直
方向に走査されたレーザビーム（２４）を半導体ウェハ
（１４）表面に照射するように構成されている。On the other hand, the lower chamber (12) is lowered by a moving mechanism (not shown) and an opening (19) is formed between it and the upper chamber (11).
A galvanometer mirror (22) is provided through the quartz window (21) attached to the opening (20) provided on the lower surface side.
The semiconductor wafer (14) surface is irradiated with a laser beam (24) scanned in the horizontal direction by the F/θ lens (23) and perpendicular to the plane of the paper by the F/θ lens (23).
次に、処理室（１３）側方向付近には開口（１９）を通
して、半導体ウェハ（１４）のレーザ光による処理状態
の像つまり反射光（２５）を反射する鏡（２６）が配置
されており、紙面に向って反射光の進行方向が左右に変
化するように鏡（２４）を回動する手段、例えばモータ
Ａ （２７）に接続され、また紙面に向って反射光の進
行方向が前後に変化するように鏡（２６）を回動する手
段、例えばモータＢ （２８）に接続されている。Next, a mirror (26) is arranged near the side of the processing chamber (13) to reflect an image of the processing state of the semiconductor wafer (14) by the laser beam, that is, reflected light (25), through the opening (19). , is connected to a means for rotating the mirror (24), such as a motor A (27), so that the direction of travel of the reflected light changes from side to side toward the page, and the direction of travel of the reflected light changes back and forth toward the page. It is connected to means for rotating the mirror (26) in a variable manner, for example a motor B (28).
そして、鏡（２６）からの反射光（２５）はフィルタ（
２９）を介して撮像装置Ｉ （３０）のテレビカメラ（
３１）に入り撮像され、ＣＲＴ （３２）にて半導体ウ
ェハ（１４）表面の形状がモニター表示される。Then, the reflected light (25) from the mirror (26) is filtered (
29) of the imaging device I (30) via the television camera (
31), and the shape of the surface of the semiconductor wafer (14) is displayed on a monitor at a CRT (32).
次に動作を説明する。Next, the operation will be explained.
まず、下チヤンバ−（１２）を移動機構（図示せず）に
より下降し半導体ウェハ（１４）をサセプタ（１５）に
吸着保持する。 そして、ガルバノミラ−（２２）、Ｆ
・θレンズ（２３）により走査されたレーザビーム（２
４）を半導体ウェハ（１４）に照射し、半導体ウェハ（
１４）からの反射光（２５）を鏡（２６）で反射させる
。この反射光（２５）をフィルタ（２９）に通して例え
ば外乱光等の不要光成分を除去しテレビカメラ（３１）
で撮像し、ＣＲＴ（３２）にモニター表示させる。First, the lower chamber (12) is lowered by a moving mechanism (not shown) to attract and hold the semiconductor wafer (14) on the susceptor (15). And galvano mirror (22), F
・Laser beam (2) scanned by θ lens (23)
4) is irradiated onto the semiconductor wafer (14), and the semiconductor wafer (
The reflected light (25) from 14) is reflected by a mirror (26). This reflected light (25) is passed through a filter (29) to remove unnecessary light components such as disturbance light, and then sent to a television camera (31).
The image is captured and displayed on the CRT (32).
この時、ＣＲＴ （３２）には第２図に示すように、反
射防止膜■の並びとレーザビーム（２４）の走査ライン
■とが表示されるので、反射防止膜■と走査ライン■と
の平行度をａ察確認することができる。At this time, as shown in Figure 2, the CRT (32) displays the arrangement of the anti-reflection film (■) and the scanning line (■) of the laser beam (24), so the line between the anti-reflection film (■) and the scanning line (■) is displayed. Parallelism can be checked by a visual inspection.
そして、モータＡ （２７）、モータＢ （２８）を動
作させて！ （２６）を回動して、それぞれ半導体ウェ
ハ（１４）の左右、前後の領域部分をモニターする。Then, operate motor A (27) and motor B (28)! (26) to monitor the left and right, front and rear areas of the semiconductor wafer (14), respectively.
上記から分かるように、
１）鏡（２６）からの反射光をモニターする構成である
ため、テレビカメラ（３１）の配置の自由度が高くなる
。As can be seen from the above, 1) Since the configuration monitors the reflected light from the mirror (26), the degree of freedom in arranging the television camera (31) is increased.
２） ｆｉ （２６）は形状が小形でもよいので、テ
レビカメラ（３１）で直接モニターする場合と比較して
、半導体ウェハ（１４）に近接して配置できる。特に、
鏡（２６）部分を処理室（１３）内に進入可能に構成す
れば、はぼ正面方向から半導体ウェハ（１４）をモニタ
ーすることができる。2) Since the fi (26) may be small in shape, it can be placed closer to the semiconductor wafer (14) than in the case where it is directly monitored with a television camera (31). especially,
By configuring the mirror (26) to be able to enter into the processing chamber (13), the semiconductor wafer (14) can be monitored from almost the front direction.
３） モニター領域を変えるには、鏡（２６）を回動さ
せるだけでよく、テレビカメラ（３１）を動かす必要は
ない。3) To change the monitor area, it is only necessary to rotate the mirror (26), and there is no need to move the television camera (31).
４）シたがって、レーザビームの走査を確実にモニター
することができる。4) Therefore, the scanning of the laser beam can be reliably monitored.
そして、必要に応じて反射防止膜■とレーザビーム（２
４）の走査ライン■との平行度を例えば半導体ウェハ（
１４）の位置を調整する等の手段にて調整し、下チヤン
バ−（１２）を上昇して処理室（１１）を密閉状態にす
る。Then, if necessary, add an anti-reflection film ■ and a laser beam (2
4) Parallelism with the scanning line ■, for example, on a semiconductor wafer (
14), and raise the lower chamber (12) to seal the processing chamber (11).
次に、赤外線ランプ（１８）を動作させ石英窓（１７）
を透過した輻射熱でサセプタ（１５）を例えば数１００
℃程度に加熱し半導体ウェハ（１４）を加熱すると共に
、レーザビーム（２４）をガルバノミラ−（２２）、Ｆ
・θレンズ（２３）により走査して、半導体ウェハ（１
４）をアニール処理する。Next, operate the infrared lamp (18) and open the quartz window (17).
The susceptor (15) is heated by the radiant heat transmitted through the
℃ to heat the semiconductor wafer (14), and the laser beam (24) to the galvano mirror (22),
・Scan with the θ lens (23) to scan the semiconductor wafer (1
4) is annealed.
なお、上記実施例では鏡（２６）を１個だけ使用してモ
ニターする場合について説明したが、かかる実施例に限
定されるものではなく、鏡（２６）を２個以上使用した
もので構成してもよく、さらに鏡（２６）の代りに例え
ばプリズム等の反射体で構成してもよいことは言うまで
もない。Although the above embodiment describes the case where only one mirror (26) is used for monitoring, the present invention is not limited to this embodiment, and the monitor may be configured using two or more mirrors (26). Furthermore, it goes without saying that the mirror (26) may be replaced by a reflecting body such as a prism.
上述のように本発明レーザ熱処理装置によれば。 According to the laser heat treatment apparatus of the present invention as described above.
高品質のレーザ熱処理を行うことができる。High quality laser heat treatment can be performed.
第１図は本発明レーザ熱処理装置の一実施例を示す構成
図、第２図はモニター表示の説明図である。
１４・・・半導体ウェハ、 ２２・・・ガルバノミラ−
１２３・・・Ｆ・０レンズ、 ２４・・・レーザビー
ム。
２５・・・反射光、２６・・・鏡、
２７・・・モータＡ、 ２８・・・モータＢ、３
１・・・テレビカメラ、 ３２・・・ＣＲＴ。
特許出願人 東京エレクトロン株式会社三菱電機株式会
社FIG. 1 is a configuration diagram showing an embodiment of the laser heat treatment apparatus of the present invention, and FIG. 2 is an explanatory diagram of a monitor display. 14... Semiconductor wafer, 22... Galvano mirror
123...F.0 lens, 24...laser beam. 25...Reflected light, 26...Mirror, 27...Motor A, 28...Motor B, 3
1...TV camera, 32...CRT. Patent applicant Tokyo Electron Corporation Mitsubishi Electric Corporation
Claims (1)
鏡の反射光を撮像装置でモニターする手段を備えたこと
を特徴とするレーザ熱処理装置。A laser heat treatment apparatus comprising means for reflecting an image of a state to be processed by a laser beam on a mirror and monitoring the reflected light from the mirror using an imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62305278A JPH07122613B2 (en) | 1987-12-02 | 1987-12-02 | Laser heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62305278A JPH07122613B2 (en) | 1987-12-02 | 1987-12-02 | Laser heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01145554A true JPH01145554A (en) | 1989-06-07 |
| JPH07122613B2 JPH07122613B2 (en) | 1995-12-25 |
Family
ID=17943172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62305278A Expired - Fee Related JPH07122613B2 (en) | 1987-12-02 | 1987-12-02 | Laser heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07122613B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008500524A (en) * | 2004-05-25 | 2008-01-10 | アンシディス | Surface strain measuring device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109186555B (en) * | 2018-10-16 | 2021-05-14 | 凌云光技术股份有限公司 | One-time imaging system and method for removing PVD (physical vapor deposition) coating of terminal shell by laser |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871486U (en) * | 1981-11-10 | 1983-05-14 | 日本電気株式会社 | Laser processing optical system |
| JPS626789A (en) * | 1985-07-03 | 1987-01-13 | Japan Sensor Corp:Kk | Laser beam welding machine |
-
1987
- 1987-12-02 JP JP62305278A patent/JPH07122613B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871486U (en) * | 1981-11-10 | 1983-05-14 | 日本電気株式会社 | Laser processing optical system |
| JPS626789A (en) * | 1985-07-03 | 1987-01-13 | Japan Sensor Corp:Kk | Laser beam welding machine |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008500524A (en) * | 2004-05-25 | 2008-01-10 | アンシディス | Surface strain measuring device |
| JP4739330B2 (en) * | 2004-05-25 | 2011-08-03 | アンシディス | Surface strain measuring device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07122613B2 (en) | 1995-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6822734B1 (en) | Apparatus and method for fabricating flat workpieces | |
| KR100755817B1 (en) | Method and apparatus for correcting a defective pixel of a liquid crystal display | |
| TWI746289B (en) | Apparatus, method and computer program product for inspection of at least side faces of semiconductor devices | |
| US7564543B2 (en) | Defective pixel correction apparatus for liquid crystal panel | |
| US11300524B1 (en) | Pupil-plane beam scanning for metrology | |
| US20140256205A1 (en) | Systems and methods for providing polarization compensated multi-spectral laser repair of liquid crystal display panels | |
| JPH09102531A (en) | Direction match system of wafer | |
| JPH01145554A (en) | Heat treatment apparatus by laser | |
| JP2000343257A (en) | Method and device for return beam removal | |
| KR20060050528A (en) | Method of picking up sectional image of laser light | |
| JPH01246829A (en) | Beam annealing device | |
| JP2000046747A (en) | Method and apparatus for inspecting appearance of liquid crystal substrate | |
| US11679449B2 (en) | Optical axis adjustment jig and method of confirming optical axis of laser processing apparatus | |
| JP3315738B2 (en) | Laser annealing method and liquid crystal display device manufacturing method | |
| JPH04356917A (en) | Laser anneal apparatus | |
| US11921054B2 (en) | Cleaved semiconductor wafer camera system | |
| JPH06291035A (en) | Beam annealing apparatus | |
| JP3519621B2 (en) | Optical measuring device and substrate processing system provided with the device | |
| JPH01146380A (en) | Method of detecting focus of laser light | |
| JP3909592B2 (en) | Method for measuring partial strain of flat substrate, partial strain measuring device, and method for manufacturing display panel | |
| WO2020022552A1 (en) | Laser annealing device | |
| JPS62191741A (en) | Method for detecting surface flaw | |
| JPH0474966A (en) | Fine particle migration measuring apparatus | |
| CN112629822A (en) | Method for inspecting dirt in polarizer | |
| JPS63193537A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |