JPH01140816U - - Google Patents
Info
- Publication number
- JPH01140816U JPH01140816U JP3738188U JP3738188U JPH01140816U JP H01140816 U JPH01140816 U JP H01140816U JP 3738188 U JP3738188 U JP 3738188U JP 3738188 U JP3738188 U JP 3738188U JP H01140816 U JPH01140816 U JP H01140816U
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- vapor phase
- phase growth
- susceptor
- heat insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988037381U JPH0621235Y2 (ja) | 1988-03-22 | 1988-03-22 | 化合物半導体気相成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988037381U JPH0621235Y2 (ja) | 1988-03-22 | 1988-03-22 | 化合物半導体気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01140816U true JPH01140816U (US20100056889A1-20100304-C00004.png) | 1989-09-27 |
JPH0621235Y2 JPH0621235Y2 (ja) | 1994-06-01 |
Family
ID=31263962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988037381U Expired - Lifetime JPH0621235Y2 (ja) | 1988-03-22 | 1988-03-22 | 化合物半導体気相成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0621235Y2 (US20100056889A1-20100304-C00004.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02109321A (ja) * | 1988-10-18 | 1990-04-23 | Furukawa Electric Co Ltd:The | 半導体薄膜気相成長装置 |
JP2013058741A (ja) * | 2011-08-17 | 2013-03-28 | Hitachi Cable Ltd | 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート |
JP2015153983A (ja) * | 2014-02-18 | 2015-08-24 | 東京エレクトロン株式会社 | 基板処理装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6421916A (en) * | 1987-07-16 | 1989-01-25 | Sony Corp | Vapor growth apparatus |
-
1988
- 1988-03-22 JP JP1988037381U patent/JPH0621235Y2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6421916A (en) * | 1987-07-16 | 1989-01-25 | Sony Corp | Vapor growth apparatus |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02109321A (ja) * | 1988-10-18 | 1990-04-23 | Furukawa Electric Co Ltd:The | 半導体薄膜気相成長装置 |
JP2013058741A (ja) * | 2011-08-17 | 2013-03-28 | Hitachi Cable Ltd | 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート |
JP2015153983A (ja) * | 2014-02-18 | 2015-08-24 | 東京エレクトロン株式会社 | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0621235Y2 (ja) | 1994-06-01 |