JPH01140052A - Gas sensor and manufacture thereof - Google Patents
Gas sensor and manufacture thereofInfo
- Publication number
- JPH01140052A JPH01140052A JP29839887A JP29839887A JPH01140052A JP H01140052 A JPH01140052 A JP H01140052A JP 29839887 A JP29839887 A JP 29839887A JP 29839887 A JP29839887 A JP 29839887A JP H01140052 A JPH01140052 A JP H01140052A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- unimolecular
- gas sensor
- formula
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000009825 accumulation Methods 0.000 claims abstract description 8
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 4
- VVOLVFOSOPJKED-UHFFFAOYSA-N copper phthalocyanine Chemical compound [Cu].N=1C2=NC(C3=CC=CC=C33)=NC3=NC(C3=CC=CC=C33)=NC3=NC(C3=CC=CC=C33)=NC3=NC=1C1=CC=CC=C12 VVOLVFOSOPJKED-UHFFFAOYSA-N 0.000 claims abstract 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 150000004696 coordination complex Chemical class 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 19
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract description 8
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 abstract description 7
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000003960 organic solvent Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000001179 sorption measurement Methods 0.000 abstract description 3
- 239000002341 toxic gas Substances 0.000 abstract description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 O2 and Zn○2 Chemical class 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はガス警報器等に用いるガスセンサおよびその製
造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a gas sensor used in a gas alarm, etc., and a method for manufacturing the same.
従来の技術
ガスセンサ素子に用いられる材料としては、ガス吸着に
よる電気室導度変化現象を利用するものとしてＳ ｎ
Ｏ２やＺｎ○２等の金属酸化物、ある種の有機半導体が
実用に供されている。材料の作製方法としては、焼結法
を用いる方法、スパッタリング法や真空蒸着法等種々の
方法が用いられているが、薄膜を形成する場合でも数十
ナノメートルから数ミクロン程度のものしか得られない
。Conventional materials used in gas sensor elements include Sn, which utilizes the phenomenon of change in electrical chamber conductivity due to gas adsorption.
Metal oxides such as O2 and Zn○2, and certain organic semiconductors are in practical use. Various methods are used to produce the material, including sintering, sputtering, and vacuum evaporation, but even when forming a thin film, only a few tens of nanometers to a few microns can be obtained. do not have.
発明が解決しようとする問題点
ガスセンサの材料に要求される機能としては、被検ガス
に対する感度９選択性、応答性、安定性。Problems to be Solved by the Invention The functions required of gas sensor materials include sensitivity to the gas to be detected, selectivity, responsiveness, and stability.
作製再現性等がある。このうち被検ガスに対する感度は
最も重要な機能であるが、二酸化窒素に対する感度は大
きいものではなく、より高感度なセンサ材料が望まれて
いる。It has good manufacturing reproducibility, etc. Among these, the sensitivity to the gas to be detected is the most important function, but the sensitivity to nitrogen dioxide is not large, and sensor materials with even higher sensitivity are desired.
本発明は、従来技術に濫み、ガスセンサ材料としては新
規な材料を用い、かつ薄膜化し易い材料および製法の組
み合わせを提供することを目的とする。An object of the present invention is to use a new material as a gas sensor material, and to provide a combination of materials and manufacturing methods that can be easily formed into a thin film.
問題点を解決するだめの手段
本発明は第１図に示す構造式の材料の新規用途としてガ
スセンサを提供するとともに、その材料の薄膜化に適し
た方法として単分子累積法を採用するものである。Means to Solve the Problems The present invention provides a gas sensor as a new use of the material having the structural formula shown in Fig. 1, and employs a single molecule accumulation method as a method suitable for making the material into a thin film. .
作 用
本発明のガスセンサおよびその製造法は有毒ガスである
二酸化窒素を高感度で検知するとともに、素子を容易に
薄膜化できる。Function: The gas sensor of the present invention and its manufacturing method can detect nitrogen dioxide, which is a toxic gas, with high sensitivity, and can easily form a thin film element.
実施例
以下、本発明の一実施例を図面をもって説明する。第１
図は単分子累積法を用いて作製する単分子膜を形成する
分子を示したものである。この分子は銅フタロシアニン
を含むポリアミド酸であｈ耐熱性や化学的安定性に富む
ポリイミドへの中間物質として用いられることもある。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
The figure shows molecules that form a monolayer produced using the single-molecule accumulation method. This molecule is a polyamic acid containing copper phthalocyanine, and is sometimes used as an intermediate material for producing polyimide, which has high heat resistance and chemical stability.
単分子累積法では成膜分子を揮発性の有機溶媒に溶かす
必要があるが、フタロシアニン骨格は有機溶媒には難溶
なため、可溶性をもたせる物このような分子構造をとっ
ている。具体的には銅（Ｉｔ）フタロシアニンポリアミ
ック酸を用いた。In the single-molecule accumulation method, it is necessary to dissolve the film-forming molecules in a volatile organic solvent, but since the phthalocyanine skeleton is poorly soluble in organic solvents, it has a molecular structure that makes it soluble. Specifically, copper (It) phthalocyanine polyamic acid was used.
以上の分子を有機溶媒に溶かし、水面上に展開させると
カルボキシル基が親水基であるので第１図の分子式の下
側が水面側となる。When the above molecules are dissolved in an organic solvent and developed on the water surface, the lower side of the molecular formula in Figure 1 will be on the water surface side because the carboxyl group is a hydrophilic group.
水面上に展開された膜にある圧力をかけ、固体状態にし
ガラス基板上に移しとシ、単分子累積法により１０層程
度単分子膜を累積させ、その上に金属電極を付けたもの
が第２図である。ａは断面図、ｂは上面図である。この
薄膜表面への被検ガス吸着による前記電極間の電導度変
化によシガス濃度の検知を行なう。以上のような形状の
素子の二酸化窒素に対する感度を示したものが第３図で
あり、窒素雰囲気中の場合と、窒素希釈による二酸化窒
素雰囲気の場合とのコンダクタンスの比を濃度を変えて
示したものである。このように、高感度なガスセンサ素
子を作製することが可能となる。A certain amount of pressure is applied to the film developed on the water surface to make it into a solid state, and the film is transferred onto a glass substrate. About 10 layers of monomolecular film are accumulated using the monomolecular accumulation method, and a metal electrode is attached on top of the monomolecular film. This is Figure 2. A is a cross-sectional view, and b is a top view. The gas concentration is detected by the change in conductivity between the electrodes due to adsorption of the gas to be detected on the surface of the thin film. Figure 3 shows the sensitivity of the element with the above shape to nitrogen dioxide, and shows the ratio of conductance in a nitrogen atmosphere and in a nitrogen dioxide atmosphere due to nitrogen dilution as the concentration is changed. It is something. In this way, it becomes possible to produce a highly sensitive gas sensor element.
発明の効果
以上のように、本発明によれば、有毒ガスである二酸化
窒素を高感度で検知できるガスセンサ素子を容易に作製
することが可能となシ、実用的効果は大きい。Effects of the Invention As described above, according to the present invention, it is possible to easily produce a gas sensor element that can detect nitrogen dioxide, which is a toxic gas, with high sensitivity, and the practical effects are great.
す素子の構成図を示す断面図および上面図、第３図は同
ガスセンサ素子の二酸化窒素の感度を示した特性図であ
る。FIG. 3 is a cross-sectional view and a top view showing the configuration of the gas sensor element, and FIG. 3 is a characteristic diagram showing the sensitivity of the gas sensor element to nitrogen dioxide.
２０１、・０．・・金属電極、２０２・・・・・・金属
電極、２０３・・・・・・ラングミュア−プロジェット
膜、２０４・・・・・・ガラス基板。201,・0. ...metal electrode, 202...metal electrode, 203...Langmuir-Prodjet film, 204...glass substrate.
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
ｆ！０１．２０２−−一 全風 電極
２０３−−− ラングミュア・プロジェット膜２Ｑ４−
−−ガラス基板
第 ２ 図Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure f! 01.202--1 Total wind electrode 203-- Langmuir-Projet membrane 2Q4-
--Glass substrate Figure 2
Claims (3)
分子膜を累積させて製膜することを特徴とするガスセン
サの製造法。 ▲数式、化学式、表等があります▼(2) A method for manufacturing a gas sensor, characterized in that an organic monolayer is formed by accumulating a material having the following structural formula using a single molecule accumulation method. ▲Contains mathematical formulas, chemical formulas, tables, etc.▼
誘導体の金属錯体である銅（II）フタロシアニンポリア
ミック酸を用いたことを特徴とする特許請求の範囲第２
項記載のガスセンサの製造法。(3) Claim 2, characterized in that copper(II) phthalocyanine polyamic acid, which is a metal complex of a phthalocyanine derivative, is used as the organic molecule used in the film-forming molecule.
Method for manufacturing the gas sensor described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29839887A JPH01140052A (en) | 1987-11-26 | 1987-11-26 | Gas sensor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29839887A JPH01140052A (en) | 1987-11-26 | 1987-11-26 | Gas sensor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01140052A true JPH01140052A (en) | 1989-06-01 |
Family
ID=17859186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29839887A Pending JPH01140052A (en) | 1987-11-26 | 1987-11-26 | Gas sensor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01140052A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4040329C2 (en) * | 1990-12-17 | 2000-06-29 | Itvi Inttech Venture Investa | Method and sensor for the detection of NOx in complex gas mixtures |
| WO2003106987A1 (en) * | 2002-06-12 | 2003-12-24 | 学校法人日本大学 | Gas sensor element and method for manufacture thereof |
| CN113777137A (en) * | 2021-09-24 | 2021-12-10 | 昆明学院 | Gas sensor based on chromium phthalocyanine monomolecular layer film and preparation method and application thereof |
-
1987
- 1987-11-26 JP JP29839887A patent/JPH01140052A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4040329C2 (en) * | 1990-12-17 | 2000-06-29 | Itvi Inttech Venture Investa | Method and sensor for the detection of NOx in complex gas mixtures |
| WO2003106987A1 (en) * | 2002-06-12 | 2003-12-24 | 学校法人日本大学 | Gas sensor element and method for manufacture thereof |
| CN113777137A (en) * | 2021-09-24 | 2021-12-10 | 昆明学院 | Gas sensor based on chromium phthalocyanine monomolecular layer film and preparation method and application thereof |
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