JPH01134852U - - Google Patents
Info
- Publication number
- JPH01134852U JPH01134852U JP2942988U JP2942988U JPH01134852U JP H01134852 U JPH01134852 U JP H01134852U JP 2942988 U JP2942988 U JP 2942988U JP 2942988 U JP2942988 U JP 2942988U JP H01134852 U JPH01134852 U JP H01134852U
- Authority
- JP
- Japan
- Prior art keywords
- water
- energy
- passages
- storage tank
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000008236 heating water Substances 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims 2
- 238000002485 combustion reaction Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
図は本考案装置の概要図である。
１…貯水槽、２…給水設備、３…取水設備、１
６…ガステーブル、１７及び１８…火口、１９及
び２０…五徳、２１及び２２…加熱用通水路、２
１ａ及び２２ａ…被加熱部、２３…通水手段、ｈ
１…最下位置、ｈ２…最上位置。
The figure is a schematic diagram of the device of the present invention. 1...Water tank, 2...Water supply equipment, 3...Water intake equipment, 1
6... Gas stove, 17 and 18... Crater, 19 and 20... Trivet, 21 and 22... Heating water passage, 2
1a and 22a...Heated part, 23...Water passage means, h
1...Lowest position, h2...Top position.
Claims (1)
熱部２１ａ，２２ａの少なくとも一部をガステー
ブル１６の火口１７，１８箇所でしかもガス燃焼
熱の非有効利用区域に位置せしめた加熱用通水路
２１，２２と、前記貯水槽１内の水を該加熱用通
水路２１，２２に循環せしめる通水手段２３とか
ら成る省エネ形ガス湯沸装置。 ２ 火口１７，１８箇所に配置される五徳１９，
２０を中空状に形成して加熱用通水路２１，２２
と成さしめたことを特徴とする請求項１記載の省
エネ形ガス湯沸装置。 ３ 貯水槽１内へ浮球１２の昇下降する案内筒１
０を設け水位が最下位置ｈ１近傍に達したときに
槽１内への給水を開始し且つ同水位が最上位置ｈ
２近傍に達したときに槽１内への給水を停止する
構成の給水設備２と成さしめたことを特徴とする
請求項１又は２記載の省エネ形ガス湯沸装置。[Claims for Utility Model Registration] 1. Water storage tank 1 equipped with water supply equipment 2 and at least a part of heated parts 21a, 22a at gas table 16's craters 17, 18, and ineffective use of gas combustion heat. An energy-saving gas water boiling device comprising heating water passages 21 and 22 located in the area, and water passage means 23 for circulating water in the water storage tank 1 to the heating water passages 21 and 22. 2 Gotoku 19 placed at 17 and 18 craters,
20 is formed into a hollow shape to form heating passages 21 and 22.
The energy-saving gas water heater according to claim 1, characterized in that: 3 Guide tube 1 for raising and lowering the floating ball 12 into the water storage tank 1
0, and when the water level reaches the vicinity of the lowest position h1, water supply to tank 1 is started, and the same water level reaches the highest position h1.
3. The energy-saving gas water boiling apparatus according to claim 1, wherein the water supply equipment 2 is configured to stop the water supply into the tank 1 when the water reaches the vicinity of 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2942988U JPH01134852U (en) | 1988-03-04 | 1988-03-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2942988U JPH01134852U (en) | 1988-03-04 | 1988-03-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01134852U true JPH01134852U (en) | 1989-09-14 |
Family
ID=31253635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2942988U Pending JPH01134852U (en) | 1988-03-04 | 1988-03-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01134852U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5943809B2 (en) * | 1981-09-16 | 1984-10-24 | ウシオ電機株式会社 | Method for epitaxial growth of amorphous silicon or polycrystalline silicon on a wafer |
| JPS60164163A (en) * | 1984-02-07 | 1985-08-27 | Matsushita Electric Ind Co Ltd | Hot water supplier |
-
1988
- 1988-03-04 JP JP2942988U patent/JPH01134852U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5943809B2 (en) * | 1981-09-16 | 1984-10-24 | ウシオ電機株式会社 | Method for epitaxial growth of amorphous silicon or polycrystalline silicon on a wafer |
| JPS60164163A (en) * | 1984-02-07 | 1985-08-27 | Matsushita Electric Ind Co Ltd | Hot water supplier |
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