JPH01127663A - Thin metallic film and target material for forming same - Google Patents
Thin metallic film and target material for forming sameInfo
- Publication number
- JPH01127663A JPH01127663A JP28368287A JP28368287A JPH01127663A JP H01127663 A JPH01127663 A JP H01127663A JP 28368287 A JP28368287 A JP 28368287A JP 28368287 A JP28368287 A JP 28368287A JP H01127663 A JPH01127663 A JP H01127663A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- thin film
- film
- chromium
- metallic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013077 target material Substances 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims abstract description 61
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 238000007740 vapor deposition Methods 0.000 claims abstract description 4
- 239000011651 chromium Substances 0.000 claims description 49
- 239000010949 copper Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010408 film Substances 0.000 abstract description 37
- 230000007261 regionalization Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- CBWUNQZJGJFJLZ-UHFFFAOYSA-N [Cl].Cl Chemical compound [Cl].Cl CBWUNQZJGJFJLZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（ｉ 要〕
表示パネルの下地膜等として利用されるクロム（Ｃｒ）
の薄膜および薄膜形成用ターゲット材に関し、その薄膜
を所定のパターンに形成するエツチング処理を、安全か
つ安価なプロセスにて短時間でしかも高精度で行えるよ
うにすることを目的とし、クロムの薄膜は、銅（Ｃｕ）
を０．５〜２５重四％含有させて形成し、
上記クロム薄膜を形成するためのターゲート材は、クロ
ムに銅が０．５〜２５重量％含まれた金属より構成され
る。[Detailed description of the invention] (i essential) Chromium (Cr) used as a base film of display panels, etc.
With regard to thin films and target materials for thin film formation, the purpose of this project is to enable etching processes to form thin films into predetermined patterns using a safe and inexpensive process, in a short time, and with high precision. , copper (Cu)
The target material for forming the chromium thin film is made of a metal containing chromium and 0.5 to 25% by weight of copper.
この発明は、エツチング性に優れたクロム（Ｃｒ）を主
成分とする金属薄膜および薄膜形成用ターゲソト材に関
する。The present invention relates to a metal thin film whose main component is chromium (Cr), which has excellent etching properties, and a target material for forming the thin film.
耐蝕性に優れたクロム（Ｃｒ）の薄膜は、ガラス、慴脂
、セラミックス、アモルファス金属等の基板との密着性
が高く、磁気記録層やＦＤＰ、液晶表示パネルの電極等
の機能膜と前記基板の間に下地膜として多用されている
。またこのほかに、銅よりなる電極の保護膜やガラス基
板を用いるフォ°トマスク用の薄膜にも広く利用され、
最近では光学的特性を利用して光の反射膜としての用途
も拡大しつつある。A thin film of chromium (Cr), which has excellent corrosion resistance, has high adhesion to substrates such as glass, resin, ceramics, and amorphous metals, and is suitable for functional films such as magnetic recording layers, FDPs, and electrodes of liquid crystal display panels and the substrates During this period, it is often used as a base film. In addition, it is widely used as a protective film for copper electrodes and as a thin film for photomasks using glass substrates.
Recently, its use as a light reflecting film is expanding by taking advantage of its optical properties.
このクロムの薄膜は、スパッタリング法、蒸着法、イオ
ンブレーティング法、電着法等により形成され、形成後
はフォトエツチング等の手法によってその一部（不要部
）を除去し所定のパターンに形成される。ここでクロム
薄膜は先にも述べたごとく耐蝕性に優れた性質を有する
ために、エツチングによるパターンの形成が困難である
という欠点があり、そのエツチング処理の向上が望まれ
ている。This chromium thin film is formed by a sputtering method, vapor deposition method, ion blating method, electrodeposition method, etc. After formation, a part (unnecessary part) is removed by a method such as photo etching and formed into a predetermined pattern. Ru. Since the chromium thin film has excellent corrosion resistance as mentioned above, it has the disadvantage that it is difficult to form a pattern by etching, and it is desired to improve the etching process.
〔従来の技術〕
従来のクロム薄膜のパターン形成法としては、ネガ型の
フォトレジスト（例えば東京応化■のＯＭＲ，ＥＰＰＲ
）と特殊なエツチング液（例えば赤血塩の溶液）を用い
てエツチングするプロセスが一般的である。このほか、
ポジ型のフォトレジスト（例えば東京応化■の０ＦＰＲ
８００）と酸系のエツチング液（例えば塩酸、水酸化ナ
トリウム）を用いたエツチング法も知られている。[Prior art] Conventional methods for patterning chromium thin films include negative photoresists (for example, Tokyo Ohka's OMR and EPPR).
) and a special etching solution (for example, a red blood salt solution). other than this,
Positive type photoresist (for example, Tokyo Ohka's 0FPR)
800) and an etching method using an acid-based etching solution (eg, hydrochloric acid, sodium hydroxide) is also known.
ところが、上記従来の前者のパターン形成法においては
、ネガ型フォトレジストの現像液に引火性の有機系現像
液を使用するため大量生産設備では特別な安全対策を必
要とし、またシアン系の赤血塩溶液を処理する高価な排
水処理施設が必要である、という問題があった。However, in the former pattern forming method, special safety measures are required in mass production equipment because a flammable organic developer is used as the negative photoresist developer, and cyan-based red blood There was a problem in that an expensive wastewater treatment facility was required to treat the salt solution.
また後者の酸系のエツチング液を用いたパターン形成法
では、安全かつ安価なプロセスを組める利点がある反面
、長時間のエツチングを必要とするうえに、先にエツチ
ングされた部分の不必要な個所までエツチングが拡大す
る、所謂サイドエツチングの現象が生じ高精度のパター
ンが形成し難い、という問題がある。The latter pattern forming method using an acid-based etching solution has the advantage of being a safe and inexpensive process, but it requires a long etching time and removes unnecessary parts of the previously etched area. There is a problem in that a so-called side etching phenomenon occurs in which the etching expands to a point where it is difficult to form a highly accurate pattern.
そこで、この発明は上記従来の状況から、安全かつ安価
なプロセスにて短時間で、しかも高精度のパターンを形
成しうるクロム（Ｃｒ）を主成分とする金属薄膜および
薄膜形成用のターゲット材を提供することを目的とする
ものである。In light of the above-mentioned conventional situation, the present invention has developed a metal thin film containing chromium (Cr) as a main component and a target material for forming the thin film, which can form a highly accurate pattern in a short time using a safe and inexpensive process. The purpose is to provide
上記目的を達成するため本発明の金属薄膜およびターゲ
ット材は第１図（ａ）、 （ｂ）に示すように、■基板
１１上に形成されたクロム（Ｃｒ）を主成分とする金属
薄膜２１は、クロムにｆＩ（Ｃｕ）を０．５〜２５重量
％含有した薄膜構造を特徴とし、
■銅を０．５〜２５重量％含むクロムの薄膜形成用ター
ゲット材３１は、クロムに銅が０．５〜２５重景％重量
れた金属よりなることを特徴とする。In order to achieve the above object, the metal thin film and target material of the present invention are as shown in FIGS. 1(a) and 1(b). is characterized by a thin film structure containing 0.5 to 25% by weight of fI (Cu) in chromium; It is characterized by being made of metal with a weight of .5 to 25%.
本発明者らはクロムの薄膜に対するエツチングメカニズ
ムを実験によって究明した。The present inventors have experimentally investigated the etching mechanism for thin chromium films.
この結果、純粋なりロムの薄膜（以下Ｃｒ薄膜と記す）
は、表面が酸化クロム（ＣｒｚＯｓ）の膜で被われるた
め耐蝕性が高く、汎用の酸系のエツチング液でパターン
形成した場合はＣｒ薄膜の形成条件、形成後の放置時間
と状態によってエツチングの進行状況にバラツキが生じ
精度の良いパターンが形成できないことが明らかとなっ
た。As a result, a pure ROM thin film (hereinafter referred to as Cr thin film)
has high corrosion resistance because its surface is covered with a chromium oxide (CrzOs) film, and when patterns are formed using a general-purpose acid-based etching solution, the progress of etching depends on the conditions for forming the Cr thin film, the standing time after formation, and the conditions. It became clear that a highly accurate pattern could not be formed due to variations in the situation.
またこれに対し本発明に基づく銅を０．５〜２５重量％
含有させたＣｒｆｉ膜２１は、表面が前記Ｃｒ２Ｏ。In addition, 0.5 to 25% by weight of copper based on the present invention
The surface of the Crfi film 21 containing the Cr2O.
と共に酸で腐食しやすい酸化第一１Ｍ（ＣｕｚＯ）の混
在した膜で被われるために、酸系のエツチング液により
高精度のパターンが短時間で形成できることが石奮かめ
られた。At the same time, since the film is covered with a film containing 1M oxide (CuzO), which is easily corroded by acid, it was hoped that a highly accurate pattern could be formed in a short time using an acid-based etching solution.
具体的には第２図のＣｕ ｆＭ度とＣｒ薄膜のエツチン
グ時間との関係図に示すように、膜厚１０００人のほぼ
純粋なＣｒ薄膜では、液温２０℃の１５ ｉｖｔ％塩酸
水溶液のエツチング液に浸してからエソチングが開始す
るまでに約１２０秒の遅延時間があり、その後エツチン
グが終了するまでに約９０〜１００秒を要している。こ
れに対しＣｕを０．５．５．５． ２４ｗｔ％含有した
本発明の代表３例（Ａ、Ｃ，Ｅ）のＣｒ薄膜（膜厚１０
００人）では、前記エツチング液に浸した直後からそれ
ぞれ４７秒、３３秒、３０秒でエツチングが開始し、約
７０秒、５５秒、４９秒にてそれぞれエツチングが終了
している。Specifically, as shown in the relationship diagram between Cu fM degree and etching time of Cr thin film in Figure 2, for a nearly pure Cr thin film with a film thickness of 1000, etching with a 15 ivt% hydrochloric acid aqueous solution at a liquid temperature of 20°C. There is a delay time of about 120 seconds from immersion in the liquid until etching starts, and after that it takes about 90 to 100 seconds to finish etching. On the other hand, Cu was 0.5.5.5. Three representative examples (A, C, E) of the present invention containing 24 wt% Cr thin film (thickness 10
00), etching started at 47 seconds, 33 seconds, and 30 seconds immediately after being immersed in the etching solution, and ended at about 70 seconds, 55 seconds, and 49 seconds, respectively.
このように本発明のＣｒ薄膜によれば、−船釣な酸系の
エツチング液を使用してもエツチング時間が大幅に短縮
できる。このエツチング時間の短縮理由は、先にも述べ
たようにＣｒｍ膜の表面に混在するＣｕ２Ｏが不導体の
Ｃｒ、０．膜を破壊しエツチングの遅延を防止し、また
エツチング進行後においてはＣｒが膜中のＣｕに対して
犠牲電極として働きＣｒのエツチングを加速するものと
推定される。このエツチング特性の向上に加えて、パタ
ーン形成後の薄膜の密着性を評価するスクラッチテスト
においても、本発明の３例のＣｒＦ１膜は、Ａが１２２
０ ｇ 、 Ｃが１０９０ｇ、 Ｅが９１０ｇの数
値を示し、はぼ純粋なＣｒ薄膜の１２６０〜１３００
ｇに比べて遜色のない高い密着力をそなえている。これ
は薄膜にオーバエツチングが少ない、つまり薄膜が精度
の高いパターンに形成されていることを意味する。As described above, according to the Cr thin film of the present invention, the etching time can be significantly shortened even if an acid-based etching solution is used. The reason for this shortening of the etching time is that, as mentioned earlier, the Cu2O mixed on the surface of the Cr film is a nonconductor of Cr, 0. It is presumed that Cr destroys the film and prevents delay in etching, and that after etching progresses, Cr acts as a sacrificial electrode for Cu in the film, accelerating the etching of Cr. In addition to this improvement in etching properties, the three CrF1 films of the present invention had an A of 122 in a scratch test for evaluating the adhesion of thin films after pattern formation.
0g, C shows the numerical value of 1090g, E shows the numerical value of 910g, and 1260~1300 of the almost pure Cr thin film.
It has a high adhesion force comparable to that of g. This means that there is little overetching in the thin film, that is, the thin film is formed in a highly accurate pattern.
なお、Ｃｒ薄膜のＣｕ濃度が２５ ｗｔ％以上になると
エツチング時間はさらに短縮できるが、Ｃｕの残炎が生
じ全面が均一にエツチングされなくなったり（パターン
精度の低下）、密着力が低下するために好ましくない。Note that if the Cu concentration of the Cr thin film is 25 wt% or more, the etching time can be further shortened, but the etching time may be further reduced due to the occurrence of Cu afterflame, which may prevent the entire surface from being etched uniformly (decreased pattern accuracy) or reduce adhesion. Undesirable.
以下、この発明の好ましい実施例について詳細に説明す
る。Preferred embodiments of the present invention will be described in detail below.
（第１実施例）
表１に示すようにＣｕＪ］の異なる６種のクロムを溶製
し、直径４インチ、厚さ５ミリのスパッタリング用ター
ゲット材（試料番号Ａ−Ｅ）を製作した。なお、第１図
山）に示すターゲット材３１にはＣｕ以外の代表的な鉄
（Ｆｅ） 、シリコン（Ｓｔ）、アルミニウム（Ａｔ）
、炭素（Ｃ）、酸素（０）等の不純物も極微貴台まれて
いる。(First Example) As shown in Table 1, six types of chromium with different CuJ] were melted to produce sputtering target materials (sample numbers A to E) having a diameter of 4 inches and a thickness of 5 mm. In addition, the target material 31 shown in Fig. 1) includes typical iron (Fe), silicon (St), and aluminum (At) other than Cu.
, carbon (C), oxygen (0), and other impurities are also present in extremely small quantities.
そして、これらのターゲット材を、スパッタリング装置
を用いてＡｒガス圧３ Ｘ １０−’ｔｏｒｒ、被膜形
成用基板の温度２００℃、入力電力３６０Ｗの条件下で
スパッタリングし、厚さ１０００人のＣｒＦＩ膜を前記
基板上に形成した。第１図（ａ）は、このＣｒｙｌ膜２
１をＰＤＰ等の表示用電極の下地膜として形成したガラ
ス基板１１を示す。Then, these target materials were sputtered using a sputtering device under the conditions of Ar gas pressure of 3 x 10-'torr, film forming substrate temperature of 200°C, and input power of 360 W to form a CrFI film with a thickness of 1000 mm. was formed on the substrate. FIG. 1(a) shows this Cryl film 2.
1 shows a glass substrate 11 on which 1 is formed as a base film of a display electrode such as a PDP.
このようにして形成された６試料対応のＣｒｍ膜に対し
オージェ分光器を用いてＣｕ含有量を分析した結果、表
１に示す数値が得られた。この数値から明らかなように
６種のＣｒｆｆ１膜は、いずれも対応するターゲット材
に含有されたＣｕ量と同程度のＣｕを含んでいる。また
、それら薄膜のうちの試料Ｃを代表して、その膜の表面
をＥＳＣＡにて分析した結果、第３図（ａ）、 （ｂｌ
に示すようにＣｒ２Ｏ，とＣｕ２Ｏとが混在しているこ
とが認められた。As a result of analyzing the Cu content of the Cr films corresponding to the six samples thus formed using an Auger spectrometer, the values shown in Table 1 were obtained. As is clear from this value, all of the six types of Crff1 films contain about the same amount of Cu as the amount of Cu contained in the corresponding target material. In addition, as a representative sample C among these thin films, the surface of the film was analyzed by ESCA, and the results were as shown in Fig. 3(a), (bl
As shown in Figure 2, it was observed that Cr2O and Cu2O were mixed.
さらに、これらＣｒ薄膜に対し液温２０℃の１５−ｔ％
塩酸（Ｈｃｌ）水溶液からなるエツチング液を用い、試
料をエツチング液に浸してからエツチングが終了するま
での時間を測定する、エツチング試験を行い、第２図に
示す結果が得られた。このエツチング時間は、先の〔作
用〕項を参照して明らかなように従来の純粋Ｃｒｍ膜よ
りも大幅に短縮しており量産性を図るのに有利である。Furthermore, for these Cr thin films, 15-t% at a liquid temperature of 20°C
An etching test was conducted using an etching solution consisting of an aqueous hydrochloric acid (HCl) solution and measuring the time from when a sample was immersed in the etching solution until the etching was completed, and the results shown in FIG. 2 were obtained. As is clear from the above [Operation] section, this etching time is much shorter than that of the conventional pure Cr film, which is advantageous for mass production.
そしてさらに、このエツチング後のパターン化されたＣ
ｒ薄膜に対しスクラッチテストを行い、表１に示す数値
が得られた。この数値も実用上問題のない密着性を示し
、高精度の薄膜パターンであることを示す。Furthermore, the patterned C after this etching
A scratch test was conducted on the r thin film, and the values shown in Table 1 were obtained. This value also shows adhesion that poses no problem in practical use, indicating that it is a highly accurate thin film pattern.
（第２実施例）
この実施例は、エツチング特性が最も安定すると思われ
る４ｗｔ％のＣｕ量を含むＣｒ３膜を対象にしたエツチ
ング試験を示す。具体的には蒸着法を用いて基板上に形
成した厚さ７５０人、大きさ３Ｘ３ａｄの当該ＣｒＦｉ
膜に対し、１５−ｔ％塩素（Ｈｃｌ）水溶液からなるエ
ツチング液をその液温を変えながら使用してエツチング
処理を行い、その時のエツチング所要時間を測定したも
のである。(Second Example) This example shows an etching test for a Cr3 film containing 4 wt% of Cu, which is considered to have the most stable etching characteristics. Specifically, the CrFi film with a thickness of 750 mm and a size of 3 x 3 ad formed on a substrate using a vapor deposition method.
The film was etched using an etching solution consisting of a 15-t% chlorine (HCl) aqueous solution while changing the temperature of the solution, and the time required for etching was measured.
第４図はこの測定結果に基づくエツチング液温とエツチ
ング所要時間との関係図を示す。この図を参照して本実
施例のＣｒｉ膜は、たとえば液温２０℃のエツチング液
の場合エツチング液に浸してから２５秒でエツチングが
開始し４１秒にてエツチングが終了する。同様に液温３
０℃の場合エツチングは９秒で開始し１２秒にて終了、
そして液温４０℃の場合エツチングは５秒で開始し８秒
にて終了する。FIG. 4 shows a relationship between the etching liquid temperature and the etching time based on the measurement results. Referring to this figure, when the Cri film of this embodiment is immersed in an etching solution having a liquid temperature of 20° C., etching starts 25 seconds after being immersed in the etching solution and ends in 41 seconds. Similarly, liquid temperature 3
At 0℃, etching starts in 9 seconds and ends in 12 seconds.
When the liquid temperature is 40° C., etching starts in 5 seconds and ends in 8 seconds.
因に本実施例のＣｒ薄膜と同じ条件で成膜されたＣｕを
含まない純粋なＣｒ薄膜は、同様な液温においてエツチ
ング開始がそれぞれ７２秒、２０秒、９秒、エツチング
終了がそれぞれ９０秒、２４秒、１２秒である。Incidentally, for a pure Cr thin film containing no Cu that was formed under the same conditions as the Cr thin film of this example, the etching start time was 72 seconds, 20 seconds, and 9 seconds, respectively, and the etching end time was 90 seconds, respectively, at the same liquid temperature. , 24 seconds, and 12 seconds.
このように本実施例のＣｒＦｊｌ膜によれば、エツチン
グ所要時間が半分以下に減少し、またエツチング液温の
依存性も小さくなり安定なエツチング特性を得ることが
できる。As described above, according to the CrFjl film of this embodiment, the time required for etching is reduced to less than half, and the dependence on the temperature of the etching solution is also reduced, making it possible to obtain stable etching characteristics.
以上２つの実施例について説明したが、本発明はこのほ
かＣｒ薄膜の形成にはイオンブレーティング法、電着法
が適用でき、またエツチング液には水酸化ナトリウム（
ＮａＯＨ）溶液等が使用可能である。Although the above two embodiments have been described, the present invention can also apply the ion blating method and the electrodeposition method to form the Cr thin film, and the etching solution can be sodium hydroxide (
NaOH) solution etc. can be used.
また表示パネルの電極構成としてＣｒの下地膜とＣｕの
導電膜およびＣｒの保護膜との３層構造を用いることが
多いが、本発明の金属薄膜はこの電極の下地膜のみなら
ず最上層保護膜のように基板上に間接的に支持された薄
膜に対しても同様に適用可能である。Furthermore, as the electrode structure of a display panel, a three-layer structure consisting of a Cr base film, a Cu conductive film, and a Cr protective film is often used. The present invention is also applicable to thin films indirectly supported on a substrate, such as membranes.
以上のようにこの発明の金属薄膜によれば、汎用の酸系
エツチング液を用いて高精度のパターンを短時間で形成
でき、しかもそのエツチング液を使用することにより高
い安全性と安価なプロセスにてパターン形成が可能であ
り、表示パネルの電極等に適用して実用上きわめて有益
である。また本発明のターゲット材によれば、前記金属
薄膜がスパッタリング法等にて容易に、かつ再現性よく
形成でき、該金属薄膜の量産化に非常に有益である。As described above, according to the metal thin film of the present invention, a highly accurate pattern can be formed in a short time using a general-purpose acid-based etching solution, and the use of this etching solution allows for a highly safe and inexpensive process. It is possible to form a pattern using the method, and it is extremely useful in practice when applied to electrodes of display panels, etc. Further, according to the target material of the present invention, the metal thin film can be easily formed by sputtering or the like with good reproducibility, which is very useful for mass production of the metal thin film.
第１図ｆａｎ、 （ｂ）は、この発明の金属薄膜とその
膜形成用ターゲット材を示す図、
第２図は、この発明の金属薄膜のＣｕ濃度とエツチング
時間との関係を示す図、
第３図（ａ）、 （ｂ）は、この発明の一実施例による
ターゲット材により成膜された金属薄膜の膜表面の分析
を示す図、
第４図は、この発明の第２実施例に係る金属薄膜のエツ
チングにおける液温と所要時間との関係を示す図である
。
第１図（ａｌ、 （ｂｌにおいて、
１１は基板、
２１は金属薄膜、
３１は薄膜形成用ターゲット材をそれぞれ示す。
表１
之１４を明の４Ｌ４３川良乞カミ１βＤ第１ 図（Ｑ）
２ト４ト日月のクーゲ・リトイイと番ずＧ口笛１図（ｂ
）
ｃｉＩＭ甲ｃＣｕ＄！Ｌ（ｗｔ％）
第２図FIG. 1 (b) is a diagram showing the metal thin film of the present invention and the target material for forming the film; FIG. 2 is a diagram showing the relationship between the Cu concentration and etching time of the metal thin film of the present invention; 3(a) and (b) are diagrams showing analysis of the surface of a metal thin film formed using a target material according to an embodiment of the present invention, and FIG. 4 is a diagram according to a second embodiment of the present invention. FIG. 3 is a diagram showing the relationship between liquid temperature and required time in etching a metal thin film. In Figure 1 (al, (bl), 11 is a substrate, 21 is a metal thin film, and 31 is a target material for forming a thin film. To 4 To Sun and Moon's Kuge Ritoii and Banzu G Whistle 1 Illustration (b
) ciIM A cCu$! L (wt%) Figure 2
Claims (4)
成されたクロム（Ｃｒ）を主成分とする金属薄膜であっ
て、 前記クロム（Ｃｒ）に対し銅（Ｃｕ）を０．５〜２５重
量％含有することを特徴とする金属薄膜。(1) A metal thin film mainly composed of chromium (Cr) formed in a predetermined pattern by etching on a substrate, with 0.5 to 25% by weight of copper (Cu) based on the chromium (Cr). A metal thin film characterized by containing.
基板上にスパッタリング法により成膜されたものである
ことを特徴とする特許請求の範囲第（１）項に記載の金
属薄膜。(2) The metal thin film containing chromium (Cr) as a main component,
The metal thin film according to claim 1, which is formed on a substrate by a sputtering method.
基板上に蒸着法により成膜されたものであることを特徴
とする特許請求の範囲第（１）項に記載の金属薄膜。(3) The metal thin film containing chromium (Cr) as a main component,
The metal thin film according to claim 1, which is formed on a substrate by a vapor deposition method.
クロム（Ｃｒ）の薄膜（２１）を形成するためのターゲ
ット材であって、 クロム（Ｃｒ）に銅（Ｃｕ）が０．５〜２５重量％含ま
れたことを特徴とする薄膜形成用ターゲット材。(4) A target material for forming a thin film (21) of chromium (Cr) containing 0.5 to 25% by weight of copper (Cu) on a substrate, wherein copper (Cu) is added to chromium (Cr). A target material for thin film formation characterized by containing 0.5 to 25% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28368287A JPH01127663A (en) | 1987-11-09 | 1987-11-09 | Thin metallic film and target material for forming same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28368287A JPH01127663A (en) | 1987-11-09 | 1987-11-09 | Thin metallic film and target material for forming same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01127663A true JPH01127663A (en) | 1989-05-19 |
| JPH0587589B2 JPH0587589B2 (en) | 1993-12-17 |
Family
ID=17668708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28368287A Granted JPH01127663A (en) | 1987-11-09 | 1987-11-09 | Thin metallic film and target material for forming same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01127663A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015536808A (en) * | 2012-04-27 | 2015-12-24 | ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー （エヌ ティー エヌ ユー） | Apparatus and method for priming a molten metal filter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5569255A (en) * | 1978-11-16 | 1980-05-24 | Fujitsu General Ltd | Forming method for alloy film chromium or titanium, and copper |
| JPS62183463A (en) * | 1986-02-07 | 1987-08-11 | Asahi Glass Co Ltd | Production of photomask blank |
-
1987
- 1987-11-09 JP JP28368287A patent/JPH01127663A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5569255A (en) * | 1978-11-16 | 1980-05-24 | Fujitsu General Ltd | Forming method for alloy film chromium or titanium, and copper |
| JPS62183463A (en) * | 1986-02-07 | 1987-08-11 | Asahi Glass Co Ltd | Production of photomask blank |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015536808A (en) * | 2012-04-27 | 2015-12-24 | ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー （エヌ ティー エヌ ユー） | Apparatus and method for priming a molten metal filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0587589B2 (en) | 1993-12-17 |
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