JPH01124724A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPH01124724A JPH01124724A JP62160938A JP16093887A JPH01124724A JP H01124724 A JPH01124724 A JP H01124724A JP 62160938 A JP62160938 A JP 62160938A JP 16093887 A JP16093887 A JP 16093887A JP H01124724 A JPH01124724 A JP H01124724A
- Authority
- JP
- Japan
- Prior art keywords
- type
- thermoelectric element
- cooling
- cooling body
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 24
- 229910002909 Bi-Te Inorganic materials 0.000 claims abstract description 9
- 229910001245 Sb alloy Inorganic materials 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 8
- 230000005679 Peltier effect Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001215 Te alloy Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000007712 rapid solidification Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、資源探査、医療用サーモグラフ、公害用ガス
検知器、夜間監視装置などに使用される赤外線ディテク
タに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an infrared detector used for resource exploration, medical thermographs, pollution gas detectors, night monitoring devices, and the like.
従来のこの種の赤外線ディテクタとして、Ｂｉ−Ｔｅ合
金を有する熱電素子のペルチェ効果を利用した冷却体に
より赤外検出素子を冷却するようにしたものがあった。As a conventional infrared detector of this kind, there is one in which an infrared detection element is cooled by a cooling body that utilizes the Peltier effect of a thermoelectric element having a Bi-Te alloy.
また冷却体に液体ヘリウムや液体窒素を用いたものや、
コンプレッサ付ガスヘリウムポンプ、ガスボンベ付ジュ
ールトムソンポンプを具備したものがあった。There are also those that use liquid helium or liquid nitrogen as a cooling body,
Some were equipped with gas helium pumps with compressors and Joule-Thomson pumps with gas cylinders.
前記熱電素子のペルチェ効果を利用したものでは冷却温
度が一１０５℃程度であって冷却温度不足になっていた
し、液体ヘリウム、液体窒素を用いたものやコンプレッ
サ付ガスヘリウムポンプ、ガスボンベ付ジュールトムソ
ンポンプを具備したものは大型で重量があり、連続運転
が不可能であった。The cooling temperature of the thermoelectric element that utilizes the Peltier effect is around 1105 degrees Celsius, which is insufficient, while the cooling temperature of the thermoelectric element is around 1105 degrees Celsius, which is insufficient.Therefore, there are systems that use liquid helium or liquid nitrogen, gas helium pumps with compressors, and Joule-Thomson pumps with gas cylinders. Those equipped with this were large and heavy and could not be operated continuously.
本発明は上記の事情に鑑みなされたものであって、その
目的とするところは、冷却温度が十分にあって感度が良
好であり且つ低騒音で連続運転が可能でありしかも軽量
でコンパクトな赤外線ディテクタを提供することにある
。The present invention was made in view of the above circumstances, and its purpose is to provide an infrared ray that has sufficient cooling temperature, good sensitivity, low noise, continuous operation, and is lightweight and compact. The purpose is to provide a detector.
〔問題点を解決するための手段及び作用〕上記の目的を
達成するために本発明は、ｐ型とｎ型のＢ １−Ｔｅ合
金を組合せた熱電素子とｐ型とｎ型のＢｉ−３ｂ合金を
組合せた熱電素子とを備えた冷却体を用いて赤外検出素
子を冷却するようにした。[Means and effects for solving the problems] In order to achieve the above objects, the present invention provides a thermoelectric element that combines p-type and n-type B1-Te alloys, and a thermoelectric element that combines p-type and n-type Bi-3b. The infrared detection element is cooled using a cooling body equipped with a thermoelectric element made of a combination of alloys.
以下、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
本発明に係る赤外線ディテクタは、ｐ型とｎ型のＢｉ−
Ｔｅ合金を組合わせた熱電素子１とｐ型とｎ型のＢｉ−
３ｂ合金を組合わせた熱電素子２を用いて一１９６℃ま
で冷却可能な冷却体３を構成しこの冷却体３を赤外検出
素子４の冷却に用いて成るものである。The infrared detector according to the present invention has p-type and n-type Bi-
Thermoelectric element 1 combining Te alloy and p-type and n-type Bi-
A thermoelectric element 2 made of a 3b alloy is used to construct a cooling body 3 capable of cooling down to -196° C., and this cooling body 3 is used to cool an infrared detection element 4.
ｐ型とｎ型のＢｔ−Ｔｅ合金とｎ型のＢｉ−５ｂ合金は
ゾーンメルティング法あるいはブリッジマン法で作製す
る。The p-type and n-type Bt-Te alloys and the n-type Bi-5b alloy are manufactured by the zone melting method or the Bridgman method.
ブリッジマン法の場合を例にとる。Ｂ ｓ ｓ Ｔｅ等
粉末を秤量し混合する。この試料をバイレックスなどの
容器５に入れ、内部をＡｒ雰囲気にし封をする（第２図
（１）参照）。次に高温で熔融しその後冷却し結晶化さ
せる（第２図（２）、（３）参照）。Take the case of the Bridgman method as an example. Weigh and mix powders such as BssTe. This sample is placed in a container 5 such as Vilex, and the inside is sealed with an Ar atmosphere (see FIG. 2 (1)). Next, it is melted at a high temperature and then cooled to crystallize (see Figure 2 (2) and (3)).
このようにして得られたＢｉ−Ｔｅ合金のインゴット６
を切り出しｎ型Ｂｉ−Ｔｅ合金より成る脚部材７とｎ型
Ｂｉ−Ｔｅ合金より成る脚部材８を作製する。Bi-Te alloy ingot 6 thus obtained
A leg member 7 made of an n-type Bi-Te alloy and a leg member 8 made of an n-type Bi-Te alloy are prepared by cutting out.
またｎ型Ｂｉ−Ｓｂ合金より成る脚部材１５も上記の脚
部材７と同様にして作製する。Further, the leg member 15 made of an n-type Bi-Sb alloy is also produced in the same manner as the leg member 7 described above.
ｎ型Ｂｉ−５ｂ合金は本出願人が先に提唱した低温用熱
電材料およびその製造方法（特願昭８１−３５３３７号
）に開示した技術を用いる。For the n-type Bi-5b alloy, the technology disclosed in the low-temperature thermoelectric material and its manufacturing method (Japanese Patent Application No. 81-35337) proposed by the present applicant is used.
すなわち、ｎ型Ｂｉ−３ｂ合金は、溶融状態にあるＢｉ
−５ｂ系合金を非平衡相になり得る冷却速度で凝固させ
ることにより得られる。That is, the n-type Bi-3b alloy contains Bi in a molten state.
It is obtained by solidifying a -5b alloy at a cooling rate that can result in a non-equilibrium phase.
具体的には、第６図に示すような装置において、溶湯溜
９にＢｉ−Ｓｂ系合金１０を装填し、高周波コイル１１
で加熱し、Ｂｉ−３ｂ系合金１０を溶融状態とする。一
方、金属製のロール１２（φ２００ｍｍ、巾２０關程度
）を５００〜４０００ ｒ ｐｍで回転させ、溶湯溜９
より溶湯をロール１２に噴出させて冷却凝固させる。Specifically, in an apparatus as shown in FIG.
is heated to bring the Bi-3b alloy 10 into a molten state. Meanwhile, a metal roll 12 (φ200 mm, width about 20 mm) is rotated at 500 to 4000 rpm, and the molten metal sump 9
The molten metal is then jetted onto the rolls 12 to be cooled and solidified.
なお、急冷ロール法を用いなくとも、平衡凝固より多量
のｐ型ドーパントを添加できる急速凝固の方法（例えば
急冷粉末）でｎ型Ｂｉ−Ｓｂ合金を作製することは可能
であろう。Note that even without using the quench roll method, it would be possible to produce an n-type Bi-Sb alloy by a rapid solidification method (for example, quenched powder) that allows addition of a larger amount of p-type dopant than in equilibrium solidification.
また、上記急冷ロール法においては、製造条件をロール
回転数５００〜４０００ｒｐｍ、ガス噴射圧０．５〜４
ｋｇ ／ ｃｄの範囲に設定しない・と、良質な急冷
膜が得られないので、好ましくは上記範囲に設定する。In addition, in the above-mentioned quench roll method, the manufacturing conditions are a roll rotation speed of 500 to 4000 rpm and a gas injection pressure of 0.5 to 4.
If it is not set within the kg/cd range, a high-quality quenched film cannot be obtained, so it is preferably set within the above range.
このようにして制作したｎ型Ｂｉ−３ｂ合金のインゴッ
トを切り出し脚部材１３を作製する。The leg member 13 is manufactured by cutting out the n-type Bi-3b alloy ingot thus manufactured.
そして、ｎ型Ｂｉ−Ｔｅ合金より成る脚部材７とｎ型Ｂ
ｉ−Ｔｅ合金より成る脚部材８とを銅板１４を用いて互
いに接続して熱電素子１を作製し、またｎ型Ｂｉ−Ｓｂ
合金より成る脚部材１５とｎ型Ｂｉ−５ｂ合金より成る
脚部材１５とを銅板１６を用いて互いに接続して熱電素
子２を作製する。Then, the leg member 7 made of n-type Bi-Te alloy and the n-type B
A thermoelectric element 1 is manufactured by connecting leg members 8 made of an i-Te alloy to each other using a copper plate 14, and an n-type Bi-Sb
The thermoelectric element 2 is manufactured by connecting the leg members 15 made of an alloy and the leg members 15 made of an n-type Bi-5b alloy to each other using a copper plate 16.
そして、前記熱電素子１を下位に熱電素子２を上位にお
いてそれぞれ複数段にセラミックス基板１７を用いて多
段カスケードにし、上下の関係の熱雷索子１，２の銅板
１４．１６間をノ＼ンダ等１８で接続して冷却体３が構
成されている。そして、この冷却体３の頂部に赤外線検
出索子４が取付けである。Then, a multi-stage cascade is formed using ceramic substrates 17 in multiple stages, with the thermoelectric element 1 at the lower level and the thermoelectric element 2 at the upper level, and the copper plates 14 and 16 of the thermal lightning cables 1 and 2 in the vertical relationship etc. 18 to form the cooling body 3. An infrared detection cable 4 is attached to the top of the cooling body 3.
冷却体３における熱電素子１，２に電流を流すことによ
ってペルチェ効果を生じさせて一１９６℃までの冷却が
可能になる。By passing a current through the thermoelectric elements 1 and 2 in the cooling body 3, a Peltier effect is generated, and cooling to -196° C. is possible.
この冷却体３を用いて赤外検出素子４を冷却する。This cooling body 3 is used to cool the infrared detection element 4.
以上詳述したように本発明に係る赤外線ディテクタは、
ｐ型とｎ型のＢ ｉ −Ｔ ｅ合金を組合せた熱電素子
とｐ型とｎ型のＢｉ−５ｂ合金を組合せた熱電素子とを
備えた冷却体を用いて赤外検出素子を冷却するようにし
たことを特徴とするものである。As detailed above, the infrared detector according to the present invention includes:
The infrared detection element is cooled using a cooling body equipped with a thermoelectric element that is a combination of p-type and n-type Bi-T e alloys and a thermoelectric element that is a combination of p-type and n-type Bi-5b alloys. It is characterized by the following.
このように冷却体に、ｐ型とｎ型のＢｉ−Ｔｅ合金を組
合せた熱雷素子とｐ型とｎ型のＢｉ−５ｂ合金を組合せ
た熱雷素子とを備えたから、この冷却体は一１９６℃ま
で冷却することができる。Since the cooling body is equipped with a thermal lightning element that is a combination of p-type and n-type Bi-Te alloys and a thermal lightning element that is a combination of p-type and n-type Bi-5b alloys, this cooling body is It can be cooled to 196°C.
したがって、冷却温度が十分にあって感度が良好であり
且つ低騒音で連続運転が可能でありしかも軽量でコンパ
クトな赤外線ディテクタを得ることができる。Therefore, it is possible to obtain an infrared detector that has a sufficient cooling temperature, has good sensitivity, can be operated continuously with low noise, and is lightweight and compact.
第１図は本発明一実施例の構成説明図、第２図（１）、
（２）、（３）、（４）は熱電素子の脚部材の作製工程
の説明図、第３図は熱電素子の配線説明図、第４図は熱
電素子カスケードの一部省略した斜視図、第５図は同平
面図、第６図は急冷ロール法におけるｐ型Ｂｉ−３ｂ合
金の作製装置の構成説明図である。
１．２は熱電素子、３は冷却体、４は赤外検出素子。
出願人 株式会社 小 松 製 作 所代理人 弁
理士 米 原 正 章Fig. 1 is an explanatory diagram of the configuration of one embodiment of the present invention, Fig. 2 (1),
(2), (3), and (4) are explanatory diagrams of the manufacturing process of the leg members of the thermoelectric element, Fig. 3 is an explanatory diagram of the wiring of the thermoelectric element, and Fig. 4 is a partially omitted perspective view of the thermoelectric element cascade. FIG. 5 is a plan view of the same, and FIG. 6 is an explanatory diagram of the configuration of an apparatus for producing p-type Bi-3b alloy using the quench roll method. 1.2 is a thermoelectric element, 3 is a cooling body, and 4 is an infrared detection element. Applicant Komatsu Manufacturing Co., Ltd. Representative Patent Attorney Masaaki Yonehara
Claims (1)
とｎ型のＢｉ−Ｓｂ合金を組合せた熱電素子とを備えた
冷却体を用いて赤外検出素子を冷却するようにしたこと
を特徴とする赤外線ディテクタ。The infrared detection element is cooled using a cooling body equipped with a thermoelectric element that combines p-type and n-type Bi-Te alloys and a thermoelectric element that combines p-type and n-type Bi-Sb alloys. An infrared detector characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62160938A JPH01124724A (en) | 1987-06-30 | 1987-06-30 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62160938A JPH01124724A (en) | 1987-06-30 | 1987-06-30 | Infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01124724A true JPH01124724A (en) | 1989-05-17 |
Family
ID=15725475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62160938A Pending JPH01124724A (en) | 1987-06-30 | 1987-06-30 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01124724A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430322A (en) * | 1992-09-08 | 1995-07-04 | Agency Of Industrial Science And Technology | Thermoelectric element sheet in which thermoelectric semiconductors are mounted between films |
| US7205675B2 (en) * | 2003-01-29 | 2007-04-17 | Hewlett-Packard Development Company, L.P. | Micro-fabricated device with thermoelectric device and method of making |
-
1987
- 1987-06-30 JP JP62160938A patent/JPH01124724A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430322A (en) * | 1992-09-08 | 1995-07-04 | Agency Of Industrial Science And Technology | Thermoelectric element sheet in which thermoelectric semiconductors are mounted between films |
| US7205675B2 (en) * | 2003-01-29 | 2007-04-17 | Hewlett-Packard Development Company, L.P. | Micro-fabricated device with thermoelectric device and method of making |
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