JPH01117376A - Edge junction type single crystal thin film superconductor tunnel junction element and manufacture thereof - Google Patents
Edge junction type single crystal thin film superconductor tunnel junction element and manufacture thereofInfo
- Publication number
- JPH01117376A JPH01117376A JP62179622A JP17962287A JPH01117376A JP H01117376 A JPH01117376 A JP H01117376A JP 62179622 A JP62179622 A JP 62179622A JP 17962287 A JP17962287 A JP 17962287A JP H01117376 A JPH01117376 A JP H01117376A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- thin film
- single crystal
- tunnel junction
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 65
- 239000013078 crystal Substances 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 238000002425 crystallisation Methods 0.000 claims abstract description 3
- 230000008020 evaporation Effects 0.000 claims abstract 2
- 238000001704 evaporation Methods 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000002470 thermal conductor Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は超伝導トンネル接合素子及びその製造方法に
関し、特にに、Ｎ、Ｆ、の結晶構造を有する物質から成
るエツジ接合型の単結晶薄膜超伝導体トンネル接合素子
とその製造方法に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a superconducting tunnel junction device and a method for manufacturing the same, and particularly to an edge junction type single crystal thin film made of a substance having a N, F crystal structure. This invention relates to a superconductor tunnel junction device and its manufacturing method.
従来の超伝導接合型トンネル素子としては第３図に示す
ものがあった。第３図（ａｌは平面接合型超伝導トンネ
ル接合素子の断面図で、図において２は第１の超伝導体
層、５は第２の超伝導体層、４は薄いトンネル絶縁膜で
ある。第３図（ｂ）は、エツジ接合型超伝導トンネル素
子で、２は第１の超伝導体層、５は第２の超伝導体層、
４は薄いトンネル用絶縁膜である。上記超伝導体層２，
５として従来はニオブなどの超伝導体金属が使用されて
いた。A conventional superconducting junction tunnel element is shown in FIG. FIG. 3 (al is a cross-sectional view of a planar junction type superconducting tunnel junction element; in the figure, 2 is a first superconductor layer, 5 is a second superconductor layer, and 4 is a thin tunnel insulating film. FIG. 3(b) shows an edge junction type superconducting tunnel device, in which 2 is a first superconductor layer, 5 is a second superconductor layer,
4 is a thin tunnel insulating film. the superconductor layer 2,
Conventionally, superconducting metals such as niobium have been used as 5.
第３図（Ｃ）は従来の超伝導トンネル接合素子であり、
超伝導体薄膜の平面を利用して接合を形成したものであ
る。Figure 3(C) shows a conventional superconducting tunnel junction element,
A junction is formed using the plane of a superconductor thin film.
従来の超伝導トンネル接合素子は以上のように超伝導ト
ンネル接合を基板に平行な面で形成するように構成され
ているので、これまでのニオブ（Ｎｂ）等の超伝導体多
結晶膜を使用するには適しているが、超伝導体の単結晶
薄膜から成る超伝導トンネル接合素子の形成には適して
いない。Conventional superconducting tunnel junction elements are configured so that the superconducting tunnel junction is formed on a plane parallel to the substrate as described above, so conventional superconducting polycrystalline films such as niobium (Nb) are used. However, it is not suitable for forming superconducting tunnel junction devices consisting of single crystal thin films of superconductors.
１９８６年にＩＢＭ、チェーリッヒ研で発見され、その
後多数発見され出した高い超伝導転移温度を有する酸化
物超伝導体は、第４図に示すに！ ＮｔＦ４型の結晶構
造を有することが同定されたが、同結晶構造の物質Ｌａ
（ランタン）−３ｒ（ストロンチウム）−Ｃｕ−０（Ｌ
ＳＣＯ）ではａ軸方向にはＣ軸方向よりも約２０倍電流
を流しやすいことや、ａ軸に平行に磁場を印加した場合
は、Ｃ軸に平行に磁場を印加した場合に比べ超伝導が消
滅する臨界磁場はかなり大きくなることが知られている
が、従来の素子の形成方法では単結晶膜から成るトンネ
ル接合素子は得られず、この電気的及び磁気的異方性は
利用できない等の問題があった。Figure 4 shows the oxide superconductors with high superconducting transition temperatures that were discovered in 1986 at IBM's Cherich Laboratory and subsequently discovered in large numbers! It was identified that it has an NtF4 type crystal structure, but a substance La with the same crystal structure
(lanthanum)-3r(strontium)-Cu-0(L
SCO), it is about 20 times easier to flow current in the a-axis direction than in the c-axis direction, and when a magnetic field is applied parallel to the a-axis, superconductivity is higher than when a magnetic field is applied parallel to the c-axis. It is known that the critical magnetic field that disappears is quite large, but conventional device formation methods cannot produce tunnel junction devices made of single crystal films, and this electrical and magnetic anisotropy cannot be utilized. There was a problem.
この発明は上記のような問題点を解消するためになされ
たもので、超伝導体単結晶薄膜を利用してトンネル接合
素子を形成でき、単結晶の磁気的・電気的異方性を利用
できる超伝導トンネル接合素子を得ること、さらには単
結晶成長のための熱処理を加えても熱応力が発生せずに
単結晶薄膜を形成でき、高温で動作可能な超伝導トンネ
ル接合素子を製造できる方法を得ることを目的としてい
る。This invention was made to solve the above-mentioned problems, and it is possible to form a tunnel junction element using a superconducting single crystal thin film and utilize the magnetic and electrical anisotropy of the single crystal. Obtaining a superconducting tunnel junction element, and furthermore, a method for manufacturing a superconducting tunnel junction element that can form a single crystal thin film without generating thermal stress even after heat treatment for single crystal growth, and that can operate at high temperatures. The purpose is to obtain.
この発明に係るエツジ接合型単結晶薄膜超伝導体トンネ
ル接合素子及びその製造方法は、超伝導体薄膜を格子定
数及び熱膨腸係数の差の少ない基板上に形成して単結晶
膜を成長させ、超伝導体の基板の面に対して垂直な面に
２つの超伝導体単結晶膜から成るトンネル接合面を形成
するとともに、エツジ接合部の絶縁膜を形成するのに斜
めイオン注入による接合部への不純物注入もしくは斜め
蒸着による方法を用い、トンネル接合面を特定の方向に
のみ揃えるようにしたものである。The edge-junction type single-crystal thin-film superconductor tunnel junction device and the manufacturing method thereof according to the present invention include forming a superconductor thin film on a substrate with a small difference in lattice constant and thermal expansion coefficient, and growing a single-crystal film. , a tunnel junction consisting of two superconductor single crystal films is formed in a plane perpendicular to the plane of the superconductor substrate, and a junction is formed by oblique ion implantation to form an insulating film at the edge junction. The tunnel junction surface is aligned only in a specific direction by using impurity implantation or oblique vapor deposition.
この発明においては、Ｓ、Ｔｊ ｏ、等の格子定数及び
熱膨張係数の差の少ない基板上にＫｔＮ＊Ｆ４等の結晶
構造を有する超伝導体薄膜を形成してこれを熱処理によ
り単結晶化するようにしたから、基板の面に垂直な方向
を超伝導体のＣ軸方向とし、２つの超伝導体薄膜の段差
の側面に垂直な方向を超伝導体単結晶のａ軸方向とする
ことができ、これにより単結晶の磁気的電気的異方性を
利用し、Ｃ軸方向に磁場を加えることにより超伝導体か
ら常伝導体に安定し自切り換えられるものが得られる。In this invention, a superconductor thin film having a crystal structure such as KtN*F4 is formed on a substrate having a small difference in lattice constant and thermal expansion coefficient such as S, Tj o, etc., and this is made into a single crystal by heat treatment. Therefore, the direction perpendicular to the plane of the substrate can be taken as the C-axis direction of the superconductor, and the direction perpendicular to the side surface of the step between the two superconductor thin films can be taken as the a-axis direction of the superconductor single crystal. As a result, by utilizing the magnetic and electrical anisotropy of the single crystal and applying a magnetic field in the C-axis direction, it is possible to obtain a material that can stably and self-switch from a superconductor to a normal conductor.
またエツジ接合部の絶縁膜を形成するのに斜めイオン注
入又は斜め蒸着を用いることによりトンネル接合面を特
定の方向にのみそろえることができる。また本発明にお
いては上記のような基板及び超伝導体薄膜を用いること
により、単結晶成長のための熱処理を加えても熱応力が
発生せずに単結晶薄膜を形成でき、高温で動作可能な超
伝導トンネル接合素子を製造できる。Furthermore, by using oblique ion implantation or oblique vapor deposition to form the insulating film at the edge junction, the tunnel junction surface can be aligned only in a specific direction. Furthermore, in the present invention, by using the substrate and superconductor thin film as described above, it is possible to form a single crystal thin film without generating thermal stress even when heat treatment is applied for single crystal growth, and it is possible to operate at high temperatures. Superconducting tunnel junction devices can be manufactured.
以下、この発明の一実施例を図について説明する。第１
図はこの発明の一実施例によるエツジ接合型単結晶薄膜
超伝導体トンネル接合素子軸−躾場舎噸寺寺告の断面図
であり、１はＳ、Ｔｉ Ｏ。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a cross-sectional view of an edge-junction type single-crystal thin-film superconductor tunnel junction element axis-straining device according to an embodiment of the present invention, where 1 is S, TiO.
の単結晶基板で立方晶プロブスカイト構造を有し、（１
００）面を持つ、２はに！ ＮＩ Ｆａ槽構造有するＬ
ａ−３１−Ｃｕ−０等の第１の単結晶超伝導体薄膜であ
る。３は層間絶縁膜、４は超伝導トンネル接合絶縁膜、
５はＬａ−３ｒ−Ｃｕ−０系、の第２の単結晶超伝導体
薄膜である。It has a cubic probskite structure with a single crystal substrate of (1
00) With a side, 2 ha ni! L with NI Fa tank structure
This is a first single crystal superconductor thin film such as a-31-Cu-0. 3 is an interlayer insulating film, 4 is a superconducting tunnel junction insulating film,
5 is a second single crystal superconductor thin film of La-3r-Cu-0 system.
第２図を用いて本実施例による超伝導トンネル接合素子
の製造方法について説明する。第２図（ａ）の立方晶ペ
ロブスカイト構造を有するＳ、Ｔｉ Ｏｆの（１００）
面上に第１のＬａ−３ｒ−Ｃｕ−０等の超伝導体薄膜２
をスパッタ蒸着する０次に８００℃以上の熱処理で単結
晶化させると基板に垂直な面がＣ軸になり、単結晶化の
あと層間絶縁膜層としてＳｉｎ、膜３をＣＶＤで形成す
る（第２図（ｂ））、続いてレジストをマスクとしてＳ
ｉｎ。A method for manufacturing a superconducting tunnel junction device according to this example will be explained using FIG. 2. (100) of S, Ti with cubic perovskite structure in Figure 2(a)
A first superconductor thin film 2 such as La-3r-Cu-0 is formed on the surface.
When it is single-crystalized by a heat treatment of 800°C or more after sputter deposition, the plane perpendicular to the substrate becomes the C-axis, and after single-crystallization, a film 3 of Sin is formed as an interlayer insulating film layer by CVD. 2(b)), then S using the resist as a mask.
in.
膜３及び第１の超伝導体層２をエツチングしパターンを
形成する（第２図（Ｃ））、次に不純物を斜めにイオン
注入し、超伝導体の組成を変えることにより薄い絶縁層
４を形成する（第２図（ｄ））、これは不純物イオン注
入の他に、斜め方向からＳ、Ｏ。The film 3 and the first superconductor layer 2 are etched to form a pattern (FIG. 2(C)), and then impurities are ion-implanted obliquely to change the composition of the superconductor to form a thin insulating layer 4. (FIG. 2(d)), which involves not only impurity ion implantation but also S and O from an oblique direction.
等を蒸着してもよい、最後に第２の超伝導体層（Ｌａ−
３ｒ−Ｃｕ−０）５をスパッタ蒸着し、熱処理を加え、
単結晶化させる（第２図（１１））、この方法によりト
ンネル接合の両側率は単結晶膜２． 。Finally, a second superconductor layer (La-
3r-Cu-0)5 was sputter deposited, heat treated,
By this method, the double-sided ratio of the tunnel junction is made into a single crystal film (FIG. 2 (11)). .
５となる。It becomes 5.
このような本実施例の超伝導トンネル接合素子では、超
伝導トンネル接合の両側の超伝導膜を単結晶化し、基板
に垂直な方向をＫｔＮムＦ、構造のＣ軸方向に、トンネ
ル接合の面に垂直な方向をａ軸方向となるように構成し
たので、得られた超伝導体層２．５は多結晶体と異なり
、再現性良く同じ性質のものが得られる。しかも本装置
ではＣ軸方向の磁場を加えるとａ軸方向に磁場を加える
場合に比べ、超伝導が消滅する臨界磁場はかなり小さく
なり、従ってこのようにＣ軸方向に磁場を加えることに
より、超伝導体から常伝導体に安定して切り換えること
ができる。In the superconducting tunnel junction device of this example, the superconducting films on both sides of the superconducting tunnel junction are made into single crystals, and the direction perpendicular to the substrate is KtN, and the plane of the tunnel junction is aligned in the C-axis direction of the structure. Since the superconductor layer 2.5 is configured such that the direction perpendicular to the a-axis direction is the a-axis direction, the obtained superconductor layer 2.5 is different from a polycrystalline material and has the same properties with good reproducibility. Moreover, in this device, when a magnetic field is applied in the C-axis direction, the critical magnetic field at which superconductivity disappears is considerably smaller than when a magnetic field is applied in the a-axis direction. Therefore, by applying a magnetic field in the C-axis direction in this way, It is possible to stably switch from a conductor to a normal conductor.
以上のように、この発明に係るエツジ接合型単結晶薄膜
超伝導体トンネル接合素子およびその製造方法によれば
、超伝導体薄膜を格子定数及び熱膨張係数の差の少ない
基板上に形成して単結晶膜を成長させ、超伝導体の基板
の面に対して垂直な面に２つの超伝導体単結晶膜から成
る！・ンネル接合面を形成するので、超伝導体単結晶薄
膜を利用したトンネル接合素子を形成でき、単結晶の磁
気的、電気的異方性を利用できる超伝導トンネル接合素
子を得ることができる。また単結晶成長のための熱処理
を加えても熱応力を発生せずに単結晶薄膜を形成でき、
高温で動作する超伝導トンネル接合素子が得られる効果
がある。As described above, according to the edge junction type single crystal thin film superconductor tunnel junction device and the manufacturing method thereof according to the present invention, a superconductor thin film is formed on a substrate with a small difference in lattice constant and coefficient of thermal expansion. Grow a single crystal film, consisting of two superconductor single crystal films in a plane perpendicular to the plane of the superconductor substrate! - Since a tunnel junction surface is formed, a tunnel junction element using a superconductor single crystal thin film can be formed, and a superconducting tunnel junction element that can utilize the magnetic and electrical anisotropy of the single crystal can be obtained. Furthermore, even if heat treatment is applied for single crystal growth, single crystal thin films can be formed without generating thermal stress.
This has the effect of providing a superconducting tunnel junction device that operates at high temperatures.
第１図はこの発明の一実施例によるエツジ接合型単結晶
薄膜超伝導体トンネル接合素子を示す断面図、第２図（
ａ）〜（ｄ）は上記素子の製造方法を示す断面図、第３
図は従来の超伝導トンネル接合素子を示す図、第４図は
に一、Ｎ、Ｆ、型結晶構造を存するＬａ−３ｒ−Ｃｕ−
０の原子配置を示す図である。
１は基板、２は第１の超伝導体薄膜、３は層間絶縁膜、
４はトンネル絶縁膜、５は第２の超伝導体薄膜。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a sectional view showing an edge junction type single crystal thin film superconductor tunnel junction device according to an embodiment of the present invention, and FIG.
a) to (d) are cross-sectional views showing the manufacturing method of the above element;
The figure shows a conventional superconducting tunnel junction device, and Figure 4 shows a La-3r-Cu-
It is a figure showing the atomic arrangement of 0. 1 is a substrate, 2 is a first superconductor thin film, 3 is an interlayer insulating film,
4 is a tunnel insulating film, and 5 is a second superconductor thin film. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (7)
、 前記第１の超伝導体単結晶薄膜の側面に設けられた薄い
絶縁膜と、 前記第１の超伝導体単結晶薄膜の前記基板に平行な面上
に設けられた層間絶縁膜と、 前記基板上に上記薄い絶縁膜を介して上記第１の超伝導
体単結晶薄膜に接合しかつこれと段差を形成するよう設
けられた第２の超伝導体単結晶薄膜とを備えたことを特
徴とするエッジ接合型単結晶薄膜超伝導体トンネル接合
素子。(1) A first superconductor single crystal thin film provided on a substrate, a thin insulating film provided on a side surface of the first superconductor single crystal thin film, and the first superconductor single crystal thin film. an interlayer insulating film provided on a surface of a thin film parallel to the substrate; and an interlayer insulating film that is bonded to the first superconductor single crystal thin film on the substrate via the thin insulating film and forms a step with the first superconductor single crystal thin film. An edge junction type single crystal thin film superconductor tunnel junction element, comprising: a second superconductor single crystal thin film provided therein.
２ＮｉＦ＿４の結晶構造を有し、基板の面に垂直な方向
は上記超伝導体のｃ軸方向であり、該両薄膜により形成
される上記段差の側面に垂直な方向は超伝導体単結晶の
ａ軸方向であることを特徴とする特許請求の範囲第１項
記載のエッジ接合型単結晶超伝導体薄膜トンネル接合素
子。(2) The first and second superconductor single crystal thin films are K_
2NiF_4 crystal structure, the direction perpendicular to the surface of the substrate is the c-axis direction of the superconductor, and the direction perpendicular to the side surface of the step formed by both thin films is the a-axis direction of the superconductor single crystal. The edge junction type single crystal superconductor thin film tunnel junction element according to claim 1, characterized in that the tunnel junction element is in the axial direction.
いＳｒＴｉＯ＿３等の物質であることを特徴とする特許
請求の範囲第１項又は第２項記載のエッジ接合型単結晶
薄膜超伝導体トンネル接合素子。(3) The edge junction type single crystal thin film superconductor according to claim 1 or 2, wherein the substrate is a material such as SrTiO_3 with small differences in lattice constant and coefficient of thermal expansion. Tunnel junction element.
成したことを特徴とする特許請求の範囲第１項ないし第
３項のいずれかに記載のエッジ接合型単結晶薄膜超伝導
体トンネル接合素子。(4) The edge junction type single crystal thin film superconductor tunnel according to any one of claims 1 to 3, wherein the insulating film of the tunnel junction is formed using oblique evaporation. Junction element.
えたことを特徴とする特許請求の範囲第１項ないし第４
項のいずれかに記載のエッジ接合型単結晶薄膜超伝導体
トンネル接合素子。(5) Claims 1 to 4 characterized in that the joint surfaces forming the tunnel junction are aligned only in one direction.
2. The edge junction type single crystal thin film superconductor tunnel junction device according to any one of the above.
注入を利用して形成したことを特徴とする特許請求の範
囲第１項ないし第５項のいずれかに記載のエッジ接合型
単結晶薄膜超伝導体トンネル接合素子。(6) The edge junction type single crystal thin film according to any one of claims 1 to 5, wherein the insulating film layer of the tunnel junction is formed using oblique ion implantation of impurities. Superconductor tunnel junction device.
り単結晶化させる工程と、 上記単結晶化した第１の超伝導体薄膜の上に層間絶縁膜
を形成する工程と、 上記第１の熱伝導体薄膜及び層間絶縁膜をエッチングし
パターンを形成する工程と、 上記両膜のパターンの側面に斜め蒸着又は不純物の斜め
イオン注入により薄い絶縁膜を形成する工程と、 その上に第２の超伝導体薄膜を上記第１の超伝導体薄膜
と段差を形成するように形成し、かつこれに熱処理を加
え、単結晶化する工程とを備えたことを特徴とするエッ
ジ接合型単結晶薄膜超伝導体トンネル接合素子の製造方
法。(7) a step of forming a first superconductor thin film on the substrate; a step of making the first thermal conductor thin film formed on the substrate into a single crystal by heat treatment; a step of forming an interlayer insulating film on the superconductor thin film; a step of etching the first thermal conductor thin film and the interlayer insulating film to form a pattern; and obliquely depositing or doping impurities on the sides of the pattern of both films. forming a thin insulating film by oblique ion implantation, forming a second superconductor thin film thereon so as to form a step with the first superconductor thin film, and applying heat treatment thereto; 1. A method for manufacturing an edge-junction type single-crystal thin-film superconductor tunnel junction device, comprising the step of single-crystallization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179622A JPH01117376A (en) | 1987-07-17 | 1987-07-17 | Edge junction type single crystal thin film superconductor tunnel junction element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179622A JPH01117376A (en) | 1987-07-17 | 1987-07-17 | Edge junction type single crystal thin film superconductor tunnel junction element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01117376A true JPH01117376A (en) | 1989-05-10 |
Family
ID=16068982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62179622A Pending JPH01117376A (en) | 1987-07-17 | 1987-07-17 | Edge junction type single crystal thin film superconductor tunnel junction element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01117376A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137378A (en) * | 1988-11-18 | 1990-05-25 | Nippon Telegr & Teleph Corp <Ntt> | Tunnel junction element of high-temperature oxide superconductor |
| EP0476687A2 (en) * | 1990-09-20 | 1992-03-25 | Sumitomo Electric Industries, Limited | Superconductor junction structure and process for fabricating the same |
| DE4124773A1 (en) * | 1991-07-26 | 1993-01-28 | Forschungszentrum Juelich Gmbh | Josephson contact prod. having a layered electrode on a substrate - by depositing 1st layer on substrate having planes divided by stepwise lamp followed by barrier layer and then 2nd layer |
| JPH07144027A (en) | 1993-11-22 | 1995-06-06 | Besuto Life:Kk | Tightening means for training muscular strength |
| JPH07183583A (en) * | 1993-12-24 | 1995-07-21 | Nec Corp | Superconducting circuit using edge type josephson junction and manufacture thereof |
| US6541789B1 (en) | 1998-09-01 | 2003-04-01 | Nec Corporation | High temperature superconductor Josephson junction element and manufacturing method for the same |
-
1987
- 1987-07-17 JP JP62179622A patent/JPH01117376A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137378A (en) * | 1988-11-18 | 1990-05-25 | Nippon Telegr & Teleph Corp <Ntt> | Tunnel junction element of high-temperature oxide superconductor |
| EP0476687A2 (en) * | 1990-09-20 | 1992-03-25 | Sumitomo Electric Industries, Limited | Superconductor junction structure and process for fabricating the same |
| US5488030A (en) * | 1990-09-20 | 1996-01-30 | Sumitomo Electric Industries, Inc. | Superconductor junction structure including two oxide superconductor layers separated by a non-superconducting layer |
| EP0476687B1 (en) * | 1990-09-20 | 2000-03-15 | Sumitomo Electric Industries, Limited | Superconductor junction structure and process for fabricating the same |
| DE4124773A1 (en) * | 1991-07-26 | 1993-01-28 | Forschungszentrum Juelich Gmbh | Josephson contact prod. having a layered electrode on a substrate - by depositing 1st layer on substrate having planes divided by stepwise lamp followed by barrier layer and then 2nd layer |
| JPH07144027A (en) | 1993-11-22 | 1995-06-06 | Besuto Life:Kk | Tightening means for training muscular strength |
| JPH07183583A (en) * | 1993-12-24 | 1995-07-21 | Nec Corp | Superconducting circuit using edge type josephson junction and manufacture thereof |
| US6541789B1 (en) | 1998-09-01 | 2003-04-01 | Nec Corporation | High temperature superconductor Josephson junction element and manufacturing method for the same |
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