JPH01117076A - Pulse gas laser device - Google Patents

Pulse gas laser device

Info

Publication number
JPH01117076A
JPH01117076A JP27505187A JP27505187A JPH01117076A JP H01117076 A JPH01117076 A JP H01117076A JP 27505187 A JP27505187 A JP 27505187A JP 27505187 A JP27505187 A JP 27505187A JP H01117076 A JPH01117076 A JP H01117076A
Authority
JP
Japan
Prior art keywords
laser
gas
insulator
discharge
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27505187A
Other languages
Japanese (ja)
Inventor
Motohiro Arai
新井 基尋
Kazuaki Hotta
和明 堀田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP27505187A priority Critical patent/JPH01117076A/en
Publication of JPH01117076A publication Critical patent/JPH01117076A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/03Constructional details of gas laser discharge tubes
    • H01S3/038Electrodes, e.g. special shape, configuration or composition

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To obtain a laser output efficiently, and to lengthen the lifetime of a laser gas by burying at least one part of a peaking capacitor into an insulator. CONSTITUTION:An insulator constituting one part of a laser tube 1 and having high halogen resistance its formed in two layer structure composed of an inwall 2 brought into contact with a laser gas and an external wall 3 not brought into contact with the laser gas. Peaking capacitors 4 are buried between the inwall 2 and the external wall 3. Distances among the peaking capacitors 4 and a discharge electrode pair 5 are shortened and floating inductance can be reduced by adopting such structure. Accordingly, electric enregy can be injected during glow discharge conducting laser excitation in a short time, thus inhibiting the generation of arc discharge, then efficiently acquiring a laser output.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、励起回路として容量移行型励起回路を用いた
パルスガスレーザ装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a pulsed gas laser device using a capacitive transfer type excitation circuit as an excitation circuit.

(従来の技術) エキシマレーザやIEA CO,レーザなどのパルスガ
スレーザ装置は、レーザガスを封入するレーザ管とレー
ザ管内に設置されレーザ励起のための放電を起こす放電
電極対、さらに放電電極対間にエネルギーを注入するた
めの励起回路から構成されている。これらのパルスガス
レーザ装置の多くは、高出力のレーザ光を得るために大
気圧以上のガス圧においてレーザガスをグロー放電させ
レーザを励起している。しかし、大気圧以上のガスを放
電させる場合アーク放電が発生し易く、アーク放電はレ
ーザの出力を低下きせるのみならずレーザガスを急激に
劣化させガスの寿命を著しく縮める。特にエキシマレー
ザなどでは、アーク放電の発生を防ぎ、レーザ出力を効
率良く得るためにはピーキングコンデンサと放電電極対
間のインダクタンスを低減することが必要である。さら
に、エキシマレーザでは、レーザガス中の不純物により
寿命が著しく縮まるから、レーザ管内のレーザガスと接
触する部分はレーザガス中に含まれるハロゲンガスと化
学反応しない物質で構成する必要がある。なお、容量移
行型励起回路については文献「レーザ研究」、第9巻、
第6号、682〜687ページに詳しく記載されている
。第2図に、従来の容量移行型励起回路を用いたパルス
ガスレーザ装置の模式的な横断面図を示した。第2図に
示した従来例では、レーザ管1の一部を耐ハロゲン性の
高い絶縁体6にしその外側にピーキングコンデンサ4を
設置している。
(Prior art) A pulsed gas laser device such as an excimer laser, IEA CO, or laser consists of a laser tube that seals laser gas, a pair of discharge electrodes that are installed in the laser tube and generates a discharge for excitation of the laser, and energy that is transferred between the pair of discharge electrodes. It consists of an excitation circuit for injecting . In most of these pulsed gas laser devices, in order to obtain high-output laser light, the laser is excited by glow-discharging the laser gas at a gas pressure equal to or higher than atmospheric pressure. However, when discharging gas at atmospheric pressure or higher, arc discharge is likely to occur, and arc discharge not only reduces the output of the laser but also rapidly deteriorates the laser gas and significantly shortens the life of the gas. Particularly in excimer lasers and the like, it is necessary to reduce the inductance between the peaking capacitor and the discharge electrode pair in order to prevent arc discharge from occurring and to obtain laser output efficiently. Furthermore, since the life of an excimer laser is significantly shortened by impurities in the laser gas, the portion of the laser tube that comes into contact with the laser gas must be made of a material that does not chemically react with the halogen gas contained in the laser gas. Regarding the capacitive transfer type excitation circuit, please refer to the literature "Laser Research", Volume 9,
No. 6, pages 682-687. FIG. 2 shows a schematic cross-sectional view of a pulsed gas laser device using a conventional capacitive transfer type excitation circuit. In the conventional example shown in FIG. 2, a part of the laser tube 1 is made of an insulator 6 having high halogen resistance, and a peaking capacitor 4 is installed outside the insulator 6.

(発明が解決しようとする問題点) 従来のパルスガスレーザ装置では、ピーキングコンデン
サ4を絶縁体6の外側に設置している。
(Problems to be Solved by the Invention) In the conventional pulsed gas laser device, the peaking capacitor 4 is installed outside the insulator 6.

この構造では、耐圧の点から、絶縁体6を厚くする必要
があるから、放電電極対5とピーキングコンデンサ4間
の距離が長く浮遊インダクタンスが大きくなる。従って
、第2図の従来のパルスガスレーザ装置には、放電電極
対5間にアーク放電が発生しやすく効率良くレーザ出力
を得ることが難しく、アーク放電でレーザガスの寿命も
短くなる欠点があった。
In this structure, from the viewpoint of withstand voltage, it is necessary to make the insulator 6 thick, so the distance between the discharge electrode pair 5 and the peaking capacitor 4 is long, and the stray inductance becomes large. Therefore, the conventional pulsed gas laser device shown in FIG. 2 has the disadvantage that arc discharge is likely to occur between the discharge electrode pair 5, making it difficult to efficiently obtain laser output, and that the arc discharge shortens the life of the laser gas.

本発明の目的は、効率良くレーザ光を得ることができ、
かつレーザガスの寿命が長い励起回路に容量移行型励起
回路を用いたパルスガスレーザ装置を提供することにあ
る。
The purpose of the present invention is to efficiently obtain laser light,
Another object of the present invention is to provide a pulsed gas laser device using a capacitance transfer type excitation circuit as an excitation circuit in which the life of the laser gas is long.

(従来の問題点を解決する手段) 本発明のパルスガスレーザ装置は、レーザ管の少なくと
も一部が絶縁体でなり、充電用コンデンサとピーキング
コンデンサとからなる容量移行型励起回路を備えるパル
スガスレーザ装置であって、ピーキングコンデンサの少
なくとも一部が絶縁体内に埋め込んであることを特徴と
している。
(Means for Solving Conventional Problems) The pulsed gas laser device of the present invention is a pulsed gas laser device in which at least a portion of the laser tube is made of an insulator, and is equipped with a capacitive transfer type excitation circuit consisting of a charging capacitor and a peaking capacitor. The device is characterized in that at least a portion of the peaking capacitor is embedded within an insulator.

(発明の作用) 本発明のように、ピーキングコンデンサを絶縁体に埋め
込むことにより従来のパルスガスレーザ装置に比ベビー
キングコンデンサと並列に接続されている放電電極対と
ピーキングコンデンサ間の距離が短くなり浮遊インダク
タンスを小さくできる。そこで、本発明のパルスガスレ
ーザ装置では、ピーキングコンデンサに蓄えられている
電気エネルギーの大部分を、放電電極対間のレーザ励起
を行うグロー放電がアーク放電に移行する前に、放電空
間に注入できる。この結果、アーク放電の発生が抑えら
れ効率良くレーザ出力を得ることができ、さらにレーザ
ガスの寿命が延びる。
(Function of the invention) By embedding the peaking capacitor in an insulator as in the present invention, the distance between the discharge electrode pair connected in parallel with the peaking capacitor and the peaking capacitor is shortened compared to the conventional pulsed gas laser device. Inductance can be reduced. Therefore, in the pulsed gas laser device of the present invention, most of the electrical energy stored in the peaking capacitor can be injected into the discharge space before the glow discharge that excites the laser between the discharge electrode pair shifts to arc discharge. As a result, the occurrence of arc discharge is suppressed, laser output can be efficiently obtained, and the life of the laser gas is extended.

(実施例) 以下、図面を参照して本発明をさらに詳しく説明する。(Example) Hereinafter, the present invention will be explained in more detail with reference to the drawings.

第1図は本発明の一実施例を模式的に示した横断面図で
ある。
FIG. 1 is a cross-sectional view schematically showing an embodiment of the present invention.

本発明においては、レーザ管1の一部を構成する耐ハロ
ゲン性の高い絶縁体が第2図に示した従来例とは異なる
。本実施例では、絶縁体はレーザガスに接する内壁2と
レーザガスに接しない外壁3とから成る2層構造にして
いる。そして、ピーキングコンデンサ4は内壁2と外壁
3との間に埋め込んである。このような構造の採用によ
り、ピーキングコンデンサ4と放電電極対5間の距離が
短くして、浮遊インダクタンスを小さくできる。
In the present invention, the insulator with high halogen resistance constituting a part of the laser tube 1 is different from the conventional example shown in FIG. In this embodiment, the insulator has a two-layer structure consisting of an inner wall 2 that is in contact with the laser gas and an outer wall 3 that is not in contact with the laser gas. The peaking capacitor 4 is embedded between the inner wall 2 and the outer wall 3. By adopting such a structure, the distance between the peaking capacitor 4 and the discharge electrode pair 5 can be shortened, and the stray inductance can be reduced.

したがって、第1図の実施例では、作用の項で述べたよ
うに短時間の内に電気エネルギーをレーザ励起を行うグ
ロー放電の間に注入でき、アーク放電の発生が抑えられ
、効率良くレーザ出力を得ることができる。さらに、こ
の実施例では、アーク放電の発生が抑えられるのでレー
ザガスの寿命が延びる。
Therefore, in the embodiment shown in Fig. 1, electrical energy can be injected into the glow discharge that excites the laser within a short time as described in the section of operation, the occurrence of arc discharge can be suppressed, and the laser output can be efficiently output. can be obtained. Furthermore, in this embodiment, the lifetime of the laser gas is extended because the occurrence of arc discharge is suppressed.

なお、本実施例においてレーザ管1の一部を構成する絶
縁体を2層構造にしているが、本発明では、単層にして
、ピーキングコンデンサ4を埋め込む穴を空け、ピーキ
ングコンデンサ4をその穴に埋め込んでも良い。さらに
、第1図実施例では内壁2と外壁3とを同じ耐ハロゲン
性の材料で形成したが、本発明ではレーザガスに接触し
ない外壁3には耐ハロゲン性の低い絶縁体を用いても差
し支えない。
In this embodiment, the insulator constituting a part of the laser tube 1 has a two-layer structure, but in the present invention, it is made into a single layer, and a hole is made to embed the peaking capacitor 4, and the peaking capacitor 4 is inserted into the hole. You can also embed it in Further, in the embodiment shown in FIG. 1, the inner wall 2 and the outer wall 3 are made of the same halogen-resistant material, but in the present invention, an insulator with low halogen resistance may be used for the outer wall 3 that does not come into contact with the laser gas. .

(発明の効果) 以上に述べたように、本発明によれば、効率良くレーザ
出力を得ることができ、レーザガスの寿命も従来より延
ばし得るパルスガスレーザ装置が提供できる。
(Effects of the Invention) As described above, according to the present invention, it is possible to provide a pulsed gas laser device that can efficiently obtain laser output and can extend the life of the laser gas compared to the conventional apparatus.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示すパルスガスレーザ装置
の模式的な横断面図、第2図は従来のバルスガスレーザ
装置の模式的な横断面図である。 1・・・レーザ管、2・・・内壁、3・・・外壁、4・
・・ピーキングコンデンサ、5・・・放電電極対、6・
・・絶縁体、7・・・充電用コンデンサ、8・・・スイ
ッチング素子。
FIG. 1 is a schematic cross-sectional view of a pulse gas laser device showing an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of a conventional pulse gas laser device. DESCRIPTION OF SYMBOLS 1... Laser tube, 2... Inner wall, 3... Outer wall, 4...
...Peaking capacitor, 5...Discharge electrode pair, 6.
... Insulator, 7... Charging capacitor, 8... Switching element.

Claims (1)

【特許請求の範囲】[Claims] レーザ管の少なくとも一部が絶縁体でなり、充電用コン
デンサとピーキングコンデンサとからなる容量移行型励
起回路を備えるパルスガスレーザ装置において、前記ピ
ーキングコンデンサの少なくとも一部が前記絶縁体内に
埋め込んであることを特徴とするパルスガスレーザ装置
In the pulsed gas laser device, at least a part of the laser tube is made of an insulator, and includes a capacitance transfer type excitation circuit consisting of a charging capacitor and a peaking capacitor, wherein at least a part of the peaking capacitor is embedded in the insulator. Characteristic pulsed gas laser equipment.
JP27505187A 1987-10-29 1987-10-29 Pulse gas laser device Pending JPH01117076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27505187A JPH01117076A (en) 1987-10-29 1987-10-29 Pulse gas laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27505187A JPH01117076A (en) 1987-10-29 1987-10-29 Pulse gas laser device

Publications (1)

Publication Number Publication Date
JPH01117076A true JPH01117076A (en) 1989-05-09

Family

ID=17550162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27505187A Pending JPH01117076A (en) 1987-10-29 1987-10-29 Pulse gas laser device

Country Status (1)

Country Link
JP (1) JPH01117076A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144978A (en) * 1988-11-26 1990-06-04 Fuji Electric Co Ltd Excimer laser apparatus
US6655974B2 (en) 2001-05-23 2003-12-02 Yamaichi Electronics Co., Ltd. Semiconductor device-socket

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6244457B2 (en) * 1978-11-27 1987-09-21 Tokyo Shibaura Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6244457B2 (en) * 1978-11-27 1987-09-21 Tokyo Shibaura Electric Co

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144978A (en) * 1988-11-26 1990-06-04 Fuji Electric Co Ltd Excimer laser apparatus
US6655974B2 (en) 2001-05-23 2003-12-02 Yamaichi Electronics Co., Ltd. Semiconductor device-socket
KR100484426B1 (en) * 2001-05-23 2005-04-22 야마이치덴키 가부시키가이샤 Semiconductor Device Socket

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