JPH01115146A - Heat sink for high power transistor - Google Patents
Heat sink for high power transistorInfo
- Publication number
- JPH01115146A JPH01115146A JP62271938A JP27193887A JPH01115146A JP H01115146 A JPH01115146 A JP H01115146A JP 62271938 A JP62271938 A JP 62271938A JP 27193887 A JP27193887 A JP 27193887A JP H01115146 A JPH01115146 A JP H01115146A
- Authority
- JP
- Japan
- Prior art keywords
- fins
- heat sink
- power transistor
- cooling medium
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012530 fluid Substances 0.000 claims abstract description 18
- 239000002826 coolant Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＮＣ工作機械等の産業機械のスピンドルモー
タ等に電力を供給する大電力トランジスタ用のヒートシ
ンクの改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a heat sink for a high-power transistor that supplies power to a spindle motor or the like of an industrial machine such as an NC machine tool.
〔従来の技術］
ＮＣ工作機械等の産業機械のスピンドルモータ等は一般
に数１０ＫＷであり、容量が１０ＯＡを超える場合は熱
損失がＩＫＷを超える場合も少なくない。[Prior Art] Spindle motors for industrial machines such as NC machine tools generally have a power of several tens of kilowatts, and when the capacity exceeds 10 OA, heat loss often exceeds IkW.
そこで、従来、第４図に示すように、ヒートシンク本体
をなす金属板状体１の１面に複数の金属の板状フィン２
を突出させ、この金属の板状フィン２相互の空間に、水
、空気、その他の流体等の冷却媒体を矢印Ａまたはその
逆方向に流して熱交換する構造のヒートシンクが使用さ
れていた。なお、６は、このヒートシンクによって冷却
される電力用トランジスタである。Therefore, conventionally, as shown in FIG.
A heat sink is used in which a cooling medium such as water, air, or other fluid flows in the space between the metal plate-shaped fins 2 in the direction of arrow A or the opposite direction to exchange heat. Note that 6 is a power transistor cooled by this heat sink.
このような構造のヒートシンクにおいては、フィン２の
幅ｄ、は、その１＠２１と他端２２との間の熱勾配が過
大にならず、熱がフィン２から本体１に向かってスムー
ズに流れる程度が望ましく、また、フィン２相互の空間
のＩＩｄａは使用される冷却媒体たる流体の粘性と、流
体の流れの速度と、熱交換される熱量等にもとづいて決
定される熱交換効率が十分大きくなること（流入する冷
却媒体たる流体温度と流出する冷却媒体たる流体温度と
に適切な温度差が、例えば１０°Ｃ等の温度差が与えら
れる程度であること）が望ましい。In a heat sink with such a structure, the width d of the fin 2 is such that the thermal gradient between the fin 1@21 and the other end 22 does not become excessive, and heat flows smoothly from the fin 2 toward the main body 1. In addition, IIda of the space between the fins 2 has a sufficiently large heat exchange efficiency, which is determined based on the viscosity of the fluid used as the cooling medium, the velocity of the fluid flow, the amount of heat exchanged, etc. (The temperature of the fluid that is the inflowing cooling medium and the temperature of the fluid that is the cooling medium that is flowing out are preferably such that an appropriate temperature difference of, for example, 10° C. is provided).
一方、製造上の便利から、従来、鋳造法をもって製造さ
れることが一般であったので、フィン２の幅ｄ、やフィ
ン２相互間の幅ｄ４等の寸法には制限があり、全体の寸
法も大きくなりやすく、重量も過大にならざるを得ない
という欠点があった。On the other hand, for manufacturing convenience, it has generally been manufactured using the casting method, so there are restrictions on dimensions such as the width d of the fins 2 and the width d4 between the fins 2, and the overall size It has the disadvantage that it tends to be too large and has to be excessively heavy.
生産効率向上の目的をもって、成形法特に引き抜き成形
法を使用してなす製造方法が開発されて今日に至ってい
るが、上記の欠点（フィン２の幅ｄ、やフィン２相互間
の幅ｄ４等の寸法には制限があり、全体の寸法も大きく
なりやすく、重量も過大にならざるを得ないという欠点
）はいまだに解決されていない。With the aim of improving production efficiency, manufacturing methods using molding methods, particularly pultrusion molding methods, have been developed and have continued to this day. The disadvantages of having limited dimensions, tending to increase overall dimensions, and inevitably increasing weight have not yet been resolved.
また、成形法、特に、引き抜き成性を使用して、上記の
大電力トランジスタ用ヒートシンクを製造するには成形
用の型を製造する上での制限と、成形後、大電力トラン
ジスタ用ヒートシンクを型から取り外す手法上の制限等
があり、フィン２はテーバ状（本体１の近傍２１の厚さ
が厚く、先端２２の厚さが薄い）となさざるを得ず、フ
ィン２の幅も１０ｍ＋程度が望ましく、最低でも６ａ程
度が限度であり、フィン２相互間の幅ｄ４も１０ｍｍ程
度が望ましいという欠点もある。In addition, there are limitations in manufacturing the mold for the above-mentioned high-power transistor heat sinks using molding methods, especially pultrusion, and there are also limitations in manufacturing the high-power transistor heat sinks after molding. Due to limitations in the method of removing the fins, the fins 2 have to be tapered (thick near the main body 1 21 and thin at the tip 22), and the width of the fins 2 is about 10 m+. Desirably, the limit is at least about 6a, and there is also a drawback that the width d4 between the fins 2 is also desirably about 10 mm.
本発明の目的は、これらの欠点を解消することにあり、
ヒートシンク本体をなす金属板状体（１）の１面に突出
して形成された板状フィン（２）を有し、該複数のフィ
ン（２）相互間の空間を冷却媒体流体（３）が流され、
該冷却媒体流体（３）の流れ方向（Ａ）と交叉する方向
の断面は櫛歯状をなす大電力トランジスタ用ヒートシン
クにおいて、重量が軽く寸法も小さく改良された大電力
トランジスタ用ヒートシンクを提供することにある。The purpose of the present invention is to eliminate these drawbacks,
It has a plate-like fin (2) formed protruding from one surface of a metal plate-like body (1) forming the heat sink body, and a cooling medium fluid (3) flows through the space between the plurality of fins (2). is,
To provide an improved heat sink for a high power transistor that is light in weight and small in size in a heat sink for a high power transistor whose cross section in a direction intersecting the flow direction (A) of the cooling medium fluid (3) is comb-shaped. It is in.
（問題点を解決するための手段〕
上記の目的は、ヒートシンク本体をなす金属板状体（１
）の１面に突出して形成された板状フィン（２）を有し
、該複数のフィン（２）相互間の空間を冷却媒体流体（
３）が流され、該冷却媒体流体（３）の流れ方向（Ａ）
と交叉する方向の断面は櫛歯状をなす大電力トランジス
タ用ヒートシンクにおいて、前記フィン（２）の一部は
、前記本体をなす金属板状体（１）に前記冷却媒体流体
（３）の流れ方向（Ａ）に形成された溝（４）に植え込
むこと−し、該植え込まれたフィン（２ａ）と前記本体
をなす金属板状体（１）との間には、熱良導性エポキシ
樹脂（５）を添加するによって達成される。(Means for solving the problem) The above purpose is to
) has plate-like fins (2) formed protruding from one side of the fins (2), and the space between the plurality of fins (2) is filled with cooling medium fluid (
3) is flowed, and the flow direction (A) of the cooling medium fluid (3)
In the heat sink for a high power transistor, the cross section in the direction intersecting with The fins (2a) are inserted into the grooves (4) formed in the direction (A), and between the implanted fins (2a) and the metal plate (1) forming the main body, a thermally conductive epoxy resin is placed. This is achieved by adding resin (5).
なお、植え込まれたフィン（２ａ）と成形されたフィン
（２）とは、１枚おきとすることが有利である。Note that it is advantageous to have every other implanted fin (2a) and molded fin (2).
本発明の発明者は、第５図に示すように、フィン２は１
枚おきに成形し、フィン２とフィン２との間にはフィン
植え込み用の溝４を形成しておき、成形後その溝４にフ
ィン２ａを植え込めば、フィン２ａの幅も小さくでき、
また、フィン２ａ相互間の幅も小さ（なしうるであろう
との着想を得て、試作をなした。The inventor of the present invention discovered that the fins 2 are 1 as shown in FIG.
By molding every other fin, forming a groove 4 for fin implantation between the fins 2, and implanting the fin 2a into the groove 4 after molding, the width of the fin 2a can be reduced.
In addition, the width between the fins 2a was also small (we got the idea that it would be possible) and made a prototype.
その結果、上記の着想の正しさは十分立証され、フィン
２．２ａの幅ｄ３は２ａ程度に、また、フィン２ａ相互
間の距離ｄ４も２Ｗ程度まで減少することに成功した。As a result, the validity of the above idea was fully verified, and the width d3 of the fins 2.2a was successfully reduced to about 2a, and the distance d4 between the fins 2a was successfully reduced to about 2W.
た＼°、常温における状態と熱膨張時における状態とが
必ずしも一致せず、使用時（高温時）においては、在外
冷却効率が向上しないことも判明した。It was also found that the state at room temperature and the state at the time of thermal expansion do not necessarily match, and that the overseas cooling efficiency does not improve during use (at high temperatures).
そこで、第６図に示すように、植え込まれたフィン２ａ
の根本部２ｂのみに、熱良導性エポキシ樹脂例えば株式
会社リゴーサン製’Ｒ−Ｂｏｎｄ」等５を添加したとこ
ろ、使用時（高温時）においても、十分に高い冷却効果
が得られることを確認して本発明を完成した。Therefore, as shown in FIG. 6, the implanted fin 2a
When a thermally conductive epoxy resin such as 'R-Bond' manufactured by Rigosan Co., Ltd. 5 was added only to the root part 2b of the tube, it was confirmed that a sufficiently high cooling effect could be obtained even during use (at high temperatures). The present invention was completed.
以下、図面を参照しつ一１本発明の一実施例に係る大電
力トランジスタ用ヒートシンクについて、さらに説明す
る。Hereinafter, a heat sink for a high power transistor according to an embodiment of the present invention will be further explained with reference to the drawings.
第２図参照
アルミニウムの引き抜き成形法を使用して、溝４の幅ｄ
１が１．６ｍであり、溝４相互間の距離（ｄｔ＋２ｄｚ
＋ｄｓ）が１２ｍｍであり、フィン２の幅が２．６鰭で
あるようにフィン２が形成されているヒートシンク素材
を製造する。Using the aluminum pultrusion method, see Figure 2, the width of the groove 4 is d.
1 is 1.6 m, and the distance between grooves 4 (dt+2dz
+ds) is 12 mm, and a heat sink material is manufactured in which the fins 2 are formed so that the width of the fins 2 is 2.6 fins.
第３図参照
溝４にフィン２ａを植え込む、この植え込みは焼き嵌め
法等を使用すると便利である。The fins 2a are implanted in the grooves 4, as shown in FIG. 3. It is convenient to use a shrink fitting method or the like for this implantation.
第１図参照
植え込まれたフィン２ａの根本部２ｂのみに、熱良導性
エポキシ樹脂例えば株式会社リョーサン製ＩＲ−Ｂｏｎ
ｄ」等５を添加する。Refer to Fig. 1. Apply thermally conductive epoxy resin, such as IR-Bon manufactured by Ryosan Co., Ltd., only to the root portion 2b of the implanted fin 2a.
d" etc. 5 is added.
以上、説明せるとおり本発明に係る大電力トランジスタ
用ヒートシンクは、ヒートシンク本体をなす金属板状体
の１面に突出して形成された板状フィンを有し、該複数
のフィン相互間の空間を冷却媒体流体が流され、該冷却
媒体流体の流れ方向と交叉する方向の断面は櫛歯状をな
す大電力トランジスタ用ヒートシンクにおいて、前記フ
ィンの一部は、前記本体をなす金属板状体に前記冷却媒
体流体の流れ方向に形成された溝に植え込まれており、
該植え込まれだフィンと前記本体をなす金属板状体との
間には、熱良導性エポキシ樹脂が添加されているので、
フィンの幅やフィン相互間の幅は上記せるとおり理想的
に選択することができて冷却効率も良好であり、しかも
、重量も軽く寸法も小さくなる。なお、植え込まれたフ
ィンは、テーパ状にする必要はない。As explained above, the heat sink for high power transistors according to the present invention has plate-like fins formed protruding from one surface of a metal plate forming the heat sink body, and cools the space between the plurality of fins. In a heat sink for a high power transistor in which a medium fluid is flowed and a cross section in a direction intersecting the flow direction of the cooling medium fluid has a comb-like shape, a part of the fins is attached to the metal plate-like body forming the main body. It is embedded in a groove formed in the flow direction of the medium fluid,
Since a thermally conductive epoxy resin is added between the implanted fin and the metal plate forming the main body,
The width of the fins and the width between the fins can be ideally selected as described above, and the cooling efficiency is good, and the weight and size are also small. Note that the implanted fins do not need to be tapered.
第１図は、本発明の一実施例に係るヒートシンクの構成
図である。
第２．３図は、本発明の一実施例に係るヒートシンクの
製造工程図である。
第４図は、従来技術に係る ヒートシンクの斜視図であ
る。
第５．６図は、本発明の着想具体化過程の説明図である
。
１・・・ヒートシンク本体、
２・ ・・フィン、
２ａ・・・植え込まれたフィン、
２ｂ・・・植え込まれたフィンの根本部、２１・・・フ
ィンの根本部、
２２・・・フィンの先端、
３・・・冷却媒体流体、
４・・・溝、
５・・・熱良導性エポキシ樹脂、
６・・・電力用トランジスタ、
ｄ、・・・溝の幅、
ｄ、・・・溝相互間の距離の半分、
ｄ、・・・フィン２．２ａの幅、
ｄ４・・・フィン２ａ相互間の距離。FIG. 1 is a configuration diagram of a heat sink according to an embodiment of the present invention. FIG. 2.3 is a manufacturing process diagram of a heat sink according to an embodiment of the present invention. FIG. 4 is a perspective view of a heat sink according to the prior art. FIG. 5.6 is an explanatory diagram of the process of realizing the idea of the present invention. DESCRIPTION OF SYMBOLS 1... Heat sink body, 2... Fin, 2a... Implanted fin, 2b... Root part of embedded fin, 21... Root part of fin, 22... Fin 3... Cooling medium fluid, 4... Groove, 5... Epoxy resin with good thermal conductivity, 6... Power transistor, d,... Width of groove, d,... Half of the distance between the grooves, d,...Width of the fins 2.2a, d4...Distance between the fins 2a.
Claims (1)
に突出して形成された板状フィン（２）を有し、 該複数のフィン（２）相互間の空間を冷却媒体流体（３
）が流され、該冷却媒体流体（３）の流れ方向（Ａ）と
交叉する方向の断面は櫛歯状をなす大電力トランジスタ
用ヒートシンクにおいて、前記フィン（２）の一部は、
前記本体をなす金属板状体（１）に前記冷却媒体流体（
３）の流れ方向（Ａ）に形成された溝（４）に植え込ま
れてなり、 該植え込まれたフィン（２ａ）と前記本体をなす金属板
状体（１）との間には、熱良導性エポキシ樹脂（５）が
添加されてなる ことを特徴とする大電力トランジスタ用ヒートシンク。 ［２］前記植え込まれたフィン（２ａ）と成形されたフ
ィン（２）とは、１枚おきであることを特徴とする特許
請求の範囲第１項記載の大電力トランジスタ用ヒートシ
ンク。[Claims] [1] A metal plate-like body (1) constituting a heat sink body has plate-like fins (2) formed protruding from one side, and a space between the plurality of fins (2). Coolant fluid (3
) is flowed, and the cross section in the direction intersecting the flow direction (A) of the cooling medium fluid (3) has a comb-like shape.
The cooling medium fluid (
3) is implanted in the groove (4) formed in the flow direction (A), and between the implanted fin (2a) and the metal plate-shaped body (1) forming the main body, A heat sink for a high-power transistor characterized by adding a thermally conductive epoxy resin (5). [2] The heat sink for a high-power transistor according to claim 1, characterized in that the implanted fins (2a) and the molded fins (2) are every other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27193887A JPH088326B2 (en) | 1987-10-29 | 1987-10-29 | Heat sink for high power transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27193887A JPH088326B2 (en) | 1987-10-29 | 1987-10-29 | Heat sink for high power transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01115146A true JPH01115146A (en) | 1989-05-08 |
| JPH088326B2 JPH088326B2 (en) | 1996-01-29 |
Family
ID=17506930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27193887A Expired - Lifetime JPH088326B2 (en) | 1987-10-29 | 1987-10-29 | Heat sink for high power transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088326B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5239199A (en) * | 1991-01-14 | 1993-08-24 | Texas Instruments Incorporated | Vertical lead-on-chip package |
| WO2005088713A1 (en) * | 2004-03-11 | 2005-09-22 | Hüttinger Elektronik Gmbh + Co. Kg | Cooling device |
-
1987
- 1987-10-29 JP JP27193887A patent/JPH088326B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5239199A (en) * | 1991-01-14 | 1993-08-24 | Texas Instruments Incorporated | Vertical lead-on-chip package |
| WO2005088713A1 (en) * | 2004-03-11 | 2005-09-22 | Hüttinger Elektronik Gmbh + Co. Kg | Cooling device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH088326B2 (en) | 1996-01-29 |
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