JPH01114780A - X-ray detecting device - Google Patents

X-ray detecting device

Info

Publication number
JPH01114780A
JPH01114780A JP62272640A JP27264087A JPH01114780A JP H01114780 A JPH01114780 A JP H01114780A JP 62272640 A JP62272640 A JP 62272640A JP 27264087 A JP27264087 A JP 27264087A JP H01114780 A JPH01114780 A JP H01114780A
Authority
JP
Japan
Prior art keywords
moisture
ray
visible light
converting part
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62272640A
Other languages
Japanese (ja)
Inventor
Takehisa Nakayama
中山 威久
Masahiko Hosomi
細見 雅彦
Akimine Hayashi
明峰 林
Masataka Kondo
正隆 近藤
Satoru Murakami
悟 村上
Yoshinori Yamaguchi
美則 山口
Yoshihisa Owada
善久 太和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP62272640A priority Critical patent/JPH01114780A/en
Priority to US07/299,103 priority patent/US5066861A/en
Publication of JPH01114780A publication Critical patent/JPH01114780A/en
Pending legal-status Critical Current

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  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To thin and lighten a device, to decrease the attenuation of X-rays and to realize a long service life of the device by covering a photoelectric converting part and an X-ray visible light converting part provided on a substrate, with a light transmissive and moisture- proof adhesive layer, and also, covering the upper face with an Al foil inserted fluororesin. CONSTITUTION:On the upper surface of a substrate 1 whose X-ray absorbing power is weak, and also, which consists of a carbon fiber/epoxy composite material being light in weight and tough, an Al thin film 2 for reflecting a visible light and shielding an electric noise is provided. In the center of the thin film 2, a foundation electrode 4 which has used a polyimide film 3 whose X-ray absorbing power is weak, as a base material, and has brought Al/Cr to vacuum vapor-deposition on the upper surface is formed, and a photoelectric converting element 5 consisting of amorphous silicon, and a transparent electrode film 6 are formed on the upper surface of the electrode 4, and on its upper surface, respectively, by which a photoelectric converting part 20 is constituted. The converting part 20 is covered with a light transmissive and moisture-proof adhesive layer 7a, and also, on its surface, an X-ray visible light converting part 8 is laminated. On the upper surface of the converting part 8, a light transmissive and moisture-proof adhesive film 7b is laminated, and also, a Tedra film 9 (Al foil inserted fluororesin) is stuck. In such a way, deterioration of the function caused by moisture absorption of the converting part is prevented, and the service life can be extended.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はX線検出装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an X-ray detection device.

[従来の技術] 第2図は、従来のX線検出装置の縦断面図である。10
aはアクリル材にてなる厚さ3〜4■の基板であり、該
基板10a上には基板10aと平面形状が同じAQ薄膜
11aが設けられる。該Af2薄@11aの基板10a
と反対方向の上表面全面には、基板10aと平面形状を
同じくしポリイミドフィルムにてなる基材12を用いた
光電変換部30が設けられる。該基材12の基板10a
と反対方向の上表面にAQ、Ag、Cr等にてなる下地
電極13が形成され、さらに、該下地電極13の基板l
Oaと反対方向の上表面にp −i −n型非晶質半導
体ダイオードの光電変換素子14が形成され、さらに該
光電変換素子14の基板10aと反対方向の上表面にS
 no t+ I T O等にてなる透明電極膜15が
形成される。前記AQ薄膜11a上に形成された構成物
12,13,14.15にて総括して光電変換部30が
形成される。さらに、該光電変換部30の基板10aと
反対方向の上表面全面に基板lOaと平面形状を同じ(
1,ZnS等にてなるX線を可視光に変換する蛍光体が
塗布されたX線画視光変換手段t6が接着され、該X線
可視光変換手段16の基板10aと反対方向の上表面全
面に基板10aと平面形状を同じくしAQ薄膜11bを
設け、最後に前記の全構成物10a、l Ia、12,
13.+4.15,16.1 lbをはさみ込む形とな
るように、基板10aと同様のアクリル材にてなる基板
10bがA12薄膜11bの上表面全面に接着される。
[Prior Art] FIG. 2 is a longitudinal sectional view of a conventional X-ray detection device. 10
A is a substrate made of acrylic material and has a thickness of 3 to 4 cm, and an AQ thin film 11a having the same planar shape as the substrate 10a is provided on the substrate 10a. The Af2 thin@11a substrate 10a
A photoelectric conversion section 30 using a base material 12 made of polyimide film and having the same planar shape as the substrate 10a is provided on the entire upper surface in the opposite direction. Substrate 10a of the base material 12
A base electrode 13 made of AQ, Ag, Cr, etc. is formed on the upper surface in the opposite direction.
A photoelectric conversion element 14 of a p-i-n type amorphous semiconductor diode is formed on the upper surface in the direction opposite to Oa, and S
A transparent electrode film 15 made of not + ITO or the like is formed. The components 12, 13, 14, and 15 formed on the AQ thin film 11a collectively form a photoelectric conversion section 30. Furthermore, the entire upper surface of the photoelectric conversion unit 30 in the direction opposite to the substrate 10a has the same planar shape as the substrate lOa (
1. An X-ray visible light converting means t6 coated with a phosphor made of ZnS or the like that converts X-rays into visible light is adhered to the entire upper surface of the X-ray visible light converting means 16 in the direction opposite to the substrate 10a. An AQ thin film 11b having the same planar shape as the substrate 10a is provided, and finally all the above-mentioned components 10a, lIa, 12,
13. A substrate 10b made of the same acrylic material as the substrate 10a is bonded to the entire upper surface of the A12 thin film 11b so as to sandwich +4.15 and 16.1 lb.

以上のように構成されたX線検出装置においてX線が入
射した場合、該X線は、X線検出装置を構成する種々の
素子を通過し、直接又は間接にX線可視光変換手段16
に入射する。これによってX線は可視光に変換され、該
可視光は透明電極膜15を通過し、直接光電変換素子1
4に入射したり、光電変換素子14をはさむ位置に設け
られるAQ薄膜11a、llbに反射し、光電変換素子
14に入射したりする。これにより光電変換素子14を
はさむ下地電極13と透明電極膜15間に電位差が生じ
る。該電位差を測定することにより本X線検出装置に照
射されたxmmを測定するものである。
When X-rays are incident on the X-ray detection device configured as described above, the X-rays pass through various elements constituting the X-ray detection device and are directly or indirectly transmitted to the X-ray visible light conversion means 16.
incident on . This converts the X-rays into visible light, which passes through the transparent electrode film 15 and directly passes through the photoelectric conversion element 1.
4, or reflected by the AQ thin films 11a and llb provided at positions sandwiching the photoelectric conversion element 14, and incident on the photoelectric conversion element 14. This creates a potential difference between the base electrode 13 and the transparent electrode film 15 that sandwich the photoelectric conversion element 14 . By measuring the potential difference, xmm irradiated to the present X-ray detection device is measured.

[発明が解決しようとする問題点] ところが、上述の従来のX線検出装置においては、X線
検出装置に加わる外力に対して強度を保つため、3〜4
門の厚さを有するアクリル材の基板10a、jobを光
電変換部30の両面に設けていたので、X線検出装置全
体の厚さが厚くなり、従って、該装置の重量も重(なる
という問題があった。また、前記基板10a又は10b
の厚さが厚いゆえ、照射されたX線が前記基板10a、
IObを通過する際の減衰率が高く、正確なX線の照射
線量を検知できないという問題があった。
[Problems to be Solved by the Invention] However, in the above-mentioned conventional X-ray detection device, in order to maintain strength against external forces applied to the X-ray detection device, the
Since the substrates 10a and jobs made of acrylic material having the same thickness as the gate are provided on both sides of the photoelectric conversion unit 30, the thickness of the entire X-ray detection device becomes thick, and therefore the weight of the device becomes heavy. Also, the substrate 10a or 10b
Since the substrates 10a and 10a are thick, the irradiated X-rays reach the substrates 10a and
There was a problem that the attenuation rate when passing through the IOb was high, making it impossible to accurately detect the X-ray irradiation dose.

さらに、光電変換部30の構成物である、基材12の材
質のポリイミドフィルムは、吸湿性に富み、従来のX線
検出装置において基材12が他の構成要素と接していな
い四面は、直接外気と接しているので、基材12は空気
中の水分を吸い込み、剥離するおそれがあり、X線検出
装置としての寿命が短くするという問題があった。
Furthermore, the polyimide film that is the material of the base material 12, which is a component of the photoelectric conversion unit 30, is highly hygroscopic, and in the conventional X-ray detection device, the four sides of the base material 12 that are not in contact with other components are directly Since the base material 12 is in contact with the outside air, there is a risk that the base material 12 may absorb moisture from the air and peel off, resulting in a problem that the life of the X-ray detection device is shortened.

本発明の目的は、以上の問題点を解決し、薄くかつ強度
のある基板を使用することで、X線検出装置を薄くかつ
軽くし、またX線検出装置の基板におけるX線の減衰を
減少させ、しかも、光電変換部の基材であるポリイミド
フィルムを外気より密閉することにより、X線検出装置
の寿命を長くしたX線検出装置を提供することを目的と
する。
The purpose of the present invention is to solve the above problems, to make an X-ray detection device thin and light by using a thin and strong substrate, and to reduce the attenuation of X-rays in the substrate of the X-ray detection device. Moreover, it is an object of the present invention to provide an X-ray detection device that has a longer life span by sealing a polyimide film, which is a base material of a photoelectric conversion section, from the outside air.

[問題点を解決するための手段] 本発明は、少なくとも、ポリイミドフィルムを基材とす
る非晶質半導体光電変換手段、X線可視光変換手段、ア
ルミ箔はさみ込みフッ素樹脂、1層以上の透光性防湿性
の粘着層で覆ったことを特徴とする。
[Means for Solving the Problems] The present invention provides at least an amorphous semiconductor photoelectric conversion means using a polyimide film as a base material, an X-ray visible light conversion means, a fluororesin sandwiched between aluminum foil, and one or more transparent layers. It is characterized by being covered with a light moisture-proof adhesive layer.

[作用] 上記のように構成することにより、X線がX線可視光変
換部に入射したとき、該X線可視光変換部により可視光
に変換されて上記光電変換部に入射する。このとき、光
電変換部は前記可視光を電気信号に変換して出力する。
[Function] With the above configuration, when X-rays enter the X-ray visible light conversion section, they are converted into visible light by the X-ray visible light conversion section and then enter the photoelectric conversion section. At this time, the photoelectric conversion section converts the visible light into an electrical signal and outputs it.

従って、入射されたX線を電気信号として検出すること
ができる。尚、基板材に薄くても強度を保つことができ
る材料を使用することにより、従来例のように厚い基板
における入射X線の減衰が減少し、X線検出装置を薄く
することができる。又、光電変換部を透光性防湿性粘着
層で密閉し、外気と遮断することにより光電変換部の基
材が吸湿性の高い材質であっても、X線検出装置の性能
を劣化させず、X線検出装置の寿命を延ばすことができ
る。
Therefore, the incident X-rays can be detected as electrical signals. Note that by using a material that can maintain strength even if it is thin for the substrate material, the attenuation of incident X-rays in a thick substrate as in the conventional example is reduced, and the X-ray detection device can be made thinner. In addition, by sealing the photoelectric conversion section with a light-transmitting moisture-proof adhesive layer and shielding it from the outside air, the performance of the X-ray detection device will not deteriorate even if the base material of the photoelectric conversion section is made of a highly hygroscopic material. , the life of the X-ray detection device can be extended.

[実施例] 以下に、この発明の一実施例を図面とともに説明する。[Example] An embodiment of the present invention will be described below with reference to the drawings.

第1図は、この発明のX線検出装置の縦断面図である。FIG. 1 is a longitudinal sectional view of the X-ray detection device of the present invention.

lはX線吸収力が弱くかつ軽量強靭な材質である炭素繊
維・エポキシ複合材よりなる厚さ0 、4 rtry、
3501R平方の正方形基板であり、該基板lの上表面
には基板lと平面形状は同じで厚さ17μ次の、後述す
るX線可視光変換部8にて生ずる可視光を反射させるた
めと、外部より電気ノイズをシールドするためのAQ薄
膜2を設ける。該AQ薄膜2のほぼ中央部には125■
角で厚さ125μ肩のX線吸収力の弱いポリイミドフィ
ルム3を基材とし、該ポリイミドフィルム3のAQ薄膜
2と反対の上表面全面にAQ/Crにてなる厚さ100
0人の下地電極4がポリイミドフィルム3と同じ平面形
状にて均一に真空蒸着される。該下地電極4の基板lと
反対方向の上表面全面に非晶質シリコンにてなる厚さt
 oooo人のp−1−n型半導体ダイオードの光電変
換素子5が例えばグロー放電法により均一に形成され、
該光電変換素子5の基板lと反対方向の上表面に■TO
透明電極膜6が下地電極4と同じ平面形状にて均一に形
成される。前記構成物3,4,5.6は総括して光電変
換部20を構成し、AQ薄@2のほぼ中央部に接着剤に
て接着される。AQ薄膜2の表面に設けられた光電変換
部20は透光性防湿性粘着層7aにより覆われる。この
透光性防湿性粘着層7aの厚さはたとえば最大0 、2
 mmでEVA(エチレン・ビニル・アセテート)にて
なる。これにより光電変換部20は透光性防湿性粘着層
7aにより完全に外気から密閉される。さらに、該透光
性防湿性粘着層7aの基板1と反対方向の上表面全面に
、X線を可視光に変換するX線可視光変換部8が前記基
板lと同じ平面形状にて積層される。X線可視光変換部
8はGd、O,S:Tbにてなる蛍光体を紙あるいは合
成樹脂フィルムに塗布してなる。さらに、X線可視光変
換部8の基板Iと反対方向の上表面全面に、前記透光性
防湿性粘着層7aと同様の透光性防湿性粘着層7 bh
4 X線画視光変換部8上面に、前記基板lと同じ平面
形状にて積層後の上表面が基板1と平行になるように均
一に積層され、さらに、この透光性防湿性粘着層7bの
基板lと反対方向の上表面全面に前記基板1と同じ平面
形状にてテドラフィルム9(AQ箔はさみ込みフッ素樹
脂フィルム)が接着剤等にて接着される。
l is made of carbon fiber/epoxy composite material, which is a lightweight and strong material with weak X-ray absorption ability, and has a thickness of 0 and 4 rtry,
It is a square substrate of 3501R square, and the upper surface of the substrate 1 has the same planar shape as the substrate 1 and has a thickness of 17 μm, in order to reflect visible light generated in the X-ray visible light converter 8, which will be described later. An AQ thin film 2 is provided to shield electrical noise from the outside. Approximately at the center of the AQ thin film 2, there is a 125 cm
A polyimide film 3 having a weak X-ray absorbing power and having a thickness of 125 μm at the corner is used as a base material, and the entire upper surface of the polyimide film 3 opposite to the AQ thin film 2 is coated with a thickness of 100 μm made of AQ/Cr.
0 base electrodes 4 are vacuum-deposited uniformly in the same planar shape as the polyimide film 3. A thickness t made of amorphous silicon over the entire upper surface of the base electrode 4 in the direction opposite to the substrate l.
oooo The photoelectric conversion element 5 of a human p-1-n type semiconductor diode is uniformly formed by, for example, a glow discharge method,
■TO on the upper surface of the photoelectric conversion element 5 in the direction opposite to the substrate l.
The transparent electrode film 6 is uniformly formed in the same planar shape as the base electrode 4. The components 3, 4, 5, and 6 collectively constitute the photoelectric conversion section 20, and are adhered to approximately the center of the AQ thin@2 with an adhesive. The photoelectric conversion section 20 provided on the surface of the AQ thin film 2 is covered with a transparent moisture-proof adhesive layer 7a. The thickness of the light-transmitting moisture-proof adhesive layer 7a is, for example, at most 0.2 mm.
Made of EVA (ethylene vinyl acetate) in mm. As a result, the photoelectric conversion section 20 is completely sealed from the outside air by the light-transmitting moisture-proof adhesive layer 7a. Furthermore, an X-ray visible light converter 8 for converting X-rays into visible light is laminated on the entire upper surface of the transparent moisture-proof adhesive layer 7a in the direction opposite to the substrate 1 in the same planar shape as the substrate 1. Ru. The X-ray visible light conversion section 8 is formed by coating paper or a synthetic resin film with a phosphor made of Gd, O, S:Tb. Furthermore, a light-transmitting moisture-proof adhesive layer 7bh similar to the light-transmitting moisture-proof adhesive layer 7a is provided on the entire upper surface of the X-ray visible light conversion unit 8 in the direction opposite to the substrate I.
4 The transparent moisture-proof adhesive layer 7b is uniformly laminated on the upper surface of the X-ray image visual light conversion unit 8 so that the upper surface after lamination is parallel to the substrate 1 in the same planar shape as the substrate 1. A Tedra film 9 (AQ foil sandwiched fluororesin film) is adhered to the entire upper surface in the opposite direction to the substrate 1 with an adhesive or the like in the same planar shape as the substrate 1.

上述のように構成されたX線検出装置において、たとえ
ばAQ薄膜2が形成されていない基板lの表面よりX線
が入射した場合、X線は基板1.AQ薄膜2、光電変換
部20、透光性防湿性粘着層7a等のX線検出装置の構
成物にはほとんど吸収されず、X線可視光変換部8に入
射し、可視光に変換される。変換された可視光は、透光
性防湿性粘着層7aを透過し、光電変換部20の構成物
である光電変換素子5に入射する。尚、X線がX線可視
光変換部8にて変換された可視光が、光電変換部20の
位置する方向と逆方向に放射された場合、又、光電変換
部20の位置する方向に放射されたにもかかわらず、光
電変換素子5を通過しなかった場合は、各々テドラフィ
ルム9内のAC箔及びAQ薄膜2により可視光は反射さ
れ、光電変換素子5に入射することができる。このよう
に、X線の可視光への変換効率が良くなる様、本X線検
出装置は構成されている。光電変換素子5に可視光が入
射することにより、光電変換素子5をはさむ透明電極膜
6と下地電極4の間に電位差が生じる。この電位差を測
定することにより、被照射体へのX線照射量を測定する
ことができる。
In the X-ray detection device configured as described above, for example, when X-rays are incident from the surface of the substrate 1 on which the AQ thin film 2 is not formed, the X-rays are transmitted to the substrate 1. It is hardly absorbed by the components of the X-ray detection device such as the AQ thin film 2, the photoelectric conversion section 20, and the transparent moisture-proof adhesive layer 7a, and enters the X-ray visible light conversion section 8 where it is converted into visible light. . The converted visible light passes through the light-transmitting moisture-proof adhesive layer 7a and enters the photoelectric conversion element 5, which is a component of the photoelectric conversion unit 20. Note that if the visible light obtained by converting the X-rays in the X-ray visible light converter 8 is emitted in the opposite direction to the direction in which the photoelectric converter 20 is located, or if the visible light is emitted in the direction in which the photoelectric converter 20 is located. However, if the visible light does not pass through the photoelectric conversion element 5, the visible light is reflected by the AC foil and the AQ thin film 2 within the TEDRA film 9 and can enter the photoelectric conversion element 5. In this way, the present X-ray detection device is configured so that the conversion efficiency of X-rays into visible light is improved. When visible light is incident on the photoelectric conversion element 5, a potential difference is generated between the transparent electrode film 6 that sandwiches the photoelectric conversion element 5 and the base electrode 4. By measuring this potential difference, the amount of X-ray irradiation to the irradiated object can be measured.

尚、この実施例において、下地電極4の材質はAQ/C
rであるが、A(!、Ag、Cr、A(!/Ag、Cr
/Ag等であってもよい。透光性防湿性粘着層7a。
In this embodiment, the material of the base electrode 4 is AQ/C.
r, but A(!, Ag, Cr, A(!/Ag, Cr
/Ag etc. may be used. Translucent moisture-proof adhesive layer 7a.

7bの材質はEVA(エチレン・ビニル・アセテート)
であるが、PVB(ポリビニルブチラール)でもよい。
The material of 7b is EVA (ethylene vinyl acetate)
However, PVB (polyvinyl butyral) may also be used.

X線−光変換部8の材質はGa2O,S:Tbであるが
、CaWO,、BaPC12:Euであっても良い。又
、透光性防湿性粘着層を基板1とAQ薄膜2の間、又は
、AQ薄膜2とポリイミドフィルム基材3の間にはさみ
込むことは、さらに防湿効果を上げる上で効果的である
The material of the X-ray-light converter 8 is Ga2O, S:Tb, but may also be CaWO, BaPC12:Eu. Furthermore, sandwiching a light-transmitting moisture-proof adhesive layer between the substrate 1 and the AQ thin film 2 or between the AQ thin film 2 and the polyimide film base material 3 is effective in further increasing the moisture-proofing effect.

[発明の効果] 以上詳述した様にこの発明によれば、X線検出装置の基
板にX線減衰が少なくかつ薄くても強度が大きい炭素繊
維板を用いることにより、従来と同様の強度を保ちつつ
X線検出装置全体の厚さを薄く、かつ該X線検出装置の
重量を軽くすることができる。又、X線が変換された可
視光により電気信号を出力する光電変換部が外気と接触
しない様に透明で防湿性のある粘着層で密閉することに
より、光電変換部の吸湿による機能の劣化を防ぐことが
でき、X線検出装置の寿命を延ばすことができる。又、
光電変換部を前記AQ薄膜で密閉することは、光電変換
部より出力される電気信号をX線検出装置外部から作用
する電気ノイズより防護でき、X線量の誤検知を防ぐこ
とにも寄与する。
[Effects of the Invention] As detailed above, according to the present invention, by using a carbon fiber board with low X-ray attenuation and high strength even though it is thin for the substrate of the X-ray detection device, the same strength as the conventional one can be achieved. It is possible to reduce the overall thickness of the X-ray detection device and reduce the weight of the X-ray detection device. In addition, by sealing the photoelectric conversion section, which outputs electrical signals using visible light converted from X-rays, with a transparent, moisture-proof adhesive layer to prevent it from coming into contact with the outside air, we can prevent functional deterioration due to moisture absorption in the photoelectric conversion section. This can be prevented and the life of the X-ray detection device can be extended. or,
Sealing the photoelectric conversion section with the AQ thin film can protect the electrical signal output from the photoelectric conversion section from electrical noise acting from outside the X-ray detection device, and also contributes to preventing false detection of the X-ray dose.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例であるX線検出装置の縦断面
図、第2図は従来のX線検出装置の−実施例である縦断
面図である。 l・・・基板、 3・・・基材、 4・・下地電極、5
・・・光電変換素子、 6・・・透明電極膜、7・・・
透光性防湿性粘着層、  8・・・X線可視光変換部、
  20・・・光電変換部。 特許出願人鐘淵化学工業株式会社 代理人 弁理士前出 葆 外1名 第1図 第2図
FIG. 1 is a vertical cross-sectional view of an X-ray detection device that is an embodiment of the present invention, and FIG. 2 is a vertical cross-sectional view that is an embodiment of a conventional X-ray detection device. l...Substrate, 3...Base material, 4...Base electrode, 5
...Photoelectric conversion element, 6...Transparent electrode film, 7...
Translucent moisture-proof adhesive layer, 8... X-ray visible light conversion section,
20...Photoelectric conversion section. Patent applicant Kanebuchi Kagaku Kogyo Co., Ltd. Agent: Patent attorney Maeda Ao and one other person Figure 1 Figure 2

Claims (2)

【特許請求の範囲】[Claims] (1)少なくとも、ポリイミドフィルムを基材とする非
晶質半導体光電変換手段、X線可視光変換手段、アルミ
ハクはさみ込みフッ素樹脂フィルム、1層以上の透光性
防湿性の粘着層で構成されたことを特徴とするX線検出
装置。
(1) Consisting of at least an amorphous semiconductor photoelectric conversion means based on a polyimide film, an X-ray visible light conversion means, a fluororesin film sandwiched with aluminum foil, and one or more light-transmitting and moisture-proof adhesive layers. An X-ray detection device characterized by:
(2)上記透光性防湿性の粘着層がPVB(ポリビニル
ブチラール)又はEVA(エチレンビニルアセテート)
であることを特徴とする特許請求の範囲第1項記載のX
線検出装置。
(2) The light-transmitting moisture-proof adhesive layer is made of PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate)
X according to claim 1, characterized in that
Line detection device.
JP62272640A 1987-07-22 1987-10-28 X-ray detecting device Pending JPH01114780A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62272640A JPH01114780A (en) 1987-10-28 1987-10-28 X-ray detecting device
US07/299,103 US5066861A (en) 1987-07-22 1989-01-19 X ray detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62272640A JPH01114780A (en) 1987-10-28 1987-10-28 X-ray detecting device

Publications (1)

Publication Number Publication Date
JPH01114780A true JPH01114780A (en) 1989-05-08

Family

ID=17516739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62272640A Pending JPH01114780A (en) 1987-07-22 1987-10-28 X-ray detecting device

Country Status (1)

Country Link
JP (1) JPH01114780A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05301086A (en) * 1992-04-23 1993-11-16 Risaikuru Kyodo Kumiai Preparation of aggregate from waste of concrete and asphalt
EP0943931A2 (en) * 1998-03-16 1999-09-22 Canon Kabushiki Kaisha Imaging apparatus
WO2001051952A1 (en) * 2000-01-13 2001-07-19 Hamamatsu Photonics K.K. Radiation image sensor and scintillator panel
JP2001264442A (en) * 2000-03-22 2001-09-26 Fuji Photo Film Co Ltd Image recording medium
WO2002012920A1 (en) * 2000-08-03 2002-02-14 Hamamatsu Photonics K.K. Radiation detector and scintillator panel and production methods therefor
WO2002012919A1 (en) * 2000-08-03 2002-02-14 Hamamatsu Photonics K.K. Radioactive ray detector and method of manufacturing the detector
US6717152B2 (en) 2000-11-27 2004-04-06 Sharp Kabushiki Kaisha Electromagnetic wave detecting device and manufacturing method thereof
US6891164B2 (en) 2000-01-13 2005-05-10 Hamamatsu Photonics K.K. Radiation image sensor and scintillator panel
TWI500926B (en) * 2012-11-23 2015-09-21 Innocom Tech Shenzhen Co Ltd Flat panel x-ray detector

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05301086A (en) * 1992-04-23 1993-11-16 Risaikuru Kyodo Kumiai Preparation of aggregate from waste of concrete and asphalt
EP0943931A2 (en) * 1998-03-16 1999-09-22 Canon Kabushiki Kaisha Imaging apparatus
EP0943931A3 (en) * 1998-03-16 2000-08-23 Canon Kabushiki Kaisha Imaging apparatus
US6891164B2 (en) 2000-01-13 2005-05-10 Hamamatsu Photonics K.K. Radiation image sensor and scintillator panel
US6867418B2 (en) 2000-01-13 2005-03-15 Hamamatsu Photonics K.K. Radiation image sensor and scintillator panel
WO2001051952A1 (en) * 2000-01-13 2001-07-19 Hamamatsu Photonics K.K. Radiation image sensor and scintillator panel
US7064335B2 (en) 2000-01-13 2006-06-20 Hamamatsu Photonics K.K. Radiation image sensor and scintillator panel
JP2001264442A (en) * 2000-03-22 2001-09-26 Fuji Photo Film Co Ltd Image recording medium
WO2002012920A1 (en) * 2000-08-03 2002-02-14 Hamamatsu Photonics K.K. Radiation detector and scintillator panel and production methods therefor
WO2002012919A1 (en) * 2000-08-03 2002-02-14 Hamamatsu Photonics K.K. Radioactive ray detector and method of manufacturing the detector
US7019302B2 (en) 2000-08-03 2006-03-28 Hamamatsu Photonics K.K. Radiation detector, scintillator panel, and methods for manufacturing same
US7019303B2 (en) 2000-08-03 2006-03-28 Hamamatsu Photonics K.K. Radiation ray detector and method of manufacturing the detector
US6717152B2 (en) 2000-11-27 2004-04-06 Sharp Kabushiki Kaisha Electromagnetic wave detecting device and manufacturing method thereof
TWI500926B (en) * 2012-11-23 2015-09-21 Innocom Tech Shenzhen Co Ltd Flat panel x-ray detector

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