JPH01112639A - Metal ion source - Google Patents
Metal ion sourceInfo
- Publication number
- JPH01112639A JPH01112639A JP27068087A JP27068087A JPH01112639A JP H01112639 A JPH01112639 A JP H01112639A JP 27068087 A JP27068087 A JP 27068087A JP 27068087 A JP27068087 A JP 27068087A JP H01112639 A JPH01112639 A JP H01112639A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- ion source
- discharge chamber
- metal ion
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 30
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 238000000605 extraction Methods 0.000 claims description 21
- 239000000696 magnetic material Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract description 51
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052786 argon Inorganic materials 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- -1 argon ion Chemical class 0.000 abstract description 4
- 238000010884 ion-beam technique Methods 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 2
- 230000035939 shock Effects 0.000 abstract 1
- 241000894007 species Species 0.000 description 10
- 239000012212 insulator Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 241000282461 Canis lupus Species 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明はイオンビーム蒸着、イオン打ち込み、重イオ
ン科学等に利用できるマイクロ波で駆動させるＰ Ｉ
Ｇ （Ｐｅｎｎｉｎｇ Ｉｏｎｉｚａｔｉｏｎ Ｇａｕ
ｇｅ）型のスパッタイオン源に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention is a microwave-driven PI that can be used in ion beam evaporation, ion implantation, heavy ion science, etc.
G (Penning Ionization Gau
ge) type sputter ion source.
従来の技術
従来のこの種の金属イオン源として、ドイツの重イオン
科学研究所で開発されたＰ Ｉ Ｇ（ＰｅｎｎｉｎｇＩ
ｏｎｉｚａｔｉｏｎ Ｇａｕｇｅ）型スパッタイオン源
（Ｈ。2. Prior Art A conventional metal ion source of this type is the PIG (Penning I
ionization Gauge) type sputter ion source (H.
５ｃｈｕｌｔｅ 、Ｗ、Ｊａｃｏｂｙ 、ａｎｄ Ｂ、
Ｈ，Ｗｏｌｆ ；ＩＥＥＥ Ｔｒａｎｓ、 ｏｎ
Ｎｕｃｌ Ｓｃｉ、Ｖｏｗ、Ｎ５−２３゜意２ 、
（１９７６）ｐ２ ）があり、第５図のような構造に
なっていた。5chulte, W., Jacoby, and B.
H, Wolf; IEEE Trans, on
Nucl Sci, Vow, N5-23° 2,
(1976) p2), and had a structure as shown in Figure 5.
軸（Ｘ）方向に磁界（９Ｋ Ｇａｕｓｓ ）をかけ、両
端に熱陰極１と反射電極２、真ん中にアノード電極３に
よるＰＩＧ放電（数１ ｏｏｖ 、数Ａ：２〜３ＫＷ）
を行なう。プラズマ生成室内４中央でイオン引き出しス
リット穴６の位置とは反対側に、７Ｘ１ｓ、、ｉ断面を
持つスパッタリング電極６を取シ付け、アノード電極３
に対して６０〜３０ｏＶの負電圧を印加して１００〜３
００ ｍＡの電流を流す。A magnetic field (9K Gauss) is applied in the axis (X) direction, and a PIG discharge is performed with a hot cathode 1 and a reflective electrode 2 at both ends and an anode electrode 3 in the middle (several 1 oov, several A: 2 to 3 KW)
Do this. At the center of the plasma generation chamber 4, on the opposite side of the ion extraction slit hole 6, a sputtering electrode 6 with a 7X1s, i cross section is installed, and an anode electrode 3 is installed.
100-3 by applying a negative voltage of 60-30oV to
A current of 00 mA is applied.
この構造で、アルゴンなど気体をイオン種導入ロア供給
してイオン源にアーク放電を点灯させておき、気体の陽
イオンがスパッタリング電極６を衝撃して電極材料（金
属イオン種用試料）をアークプラズマ中にスパツクする
。このスパツクされた金属はアークプラズマ中でイオン
化され、引き出しスリット穴６から金属イオンとして引
き出される。With this structure, a gas such as argon is supplied to the ion species introduction lower to light an arc discharge in the ion source, and the gaseous cations impact the sputtering electrode 6 and transfer the electrode material (sample for metal ion species) to the arc plasma. Splash inside. The spattered metal is ionized in the arc plasma and extracted from the extraction slit hole 6 as metal ions.
発明が解決しようとする問題点
しかし、このような構造のものでは、熱陰極を使用して
いるために、プラズマ生成室内４の壁面にタンタルまた
はニオブで作った熱遮蔽板８を置いであるが、放電底力
により手数百度まで加熱されるため、電圧をかけるだめ
の絶縁物９が熱のだめに絶縁破壊を起こすという問題が
あり、また、熱をきらう磁界発生手段をイオン源からは
なして組まなければならないという間遠もあった。Problems to be Solved by the Invention However, since such a structure uses a hot cathode, a heat shield plate 8 made of tantalum or niobium is placed on the wall of the plasma generation chamber 4. Since the electric discharge force heats the hand up to several hundred degrees Celsius, there is a problem that the insulator 9 to which the voltage is applied will cause dielectric breakdown due to the heat, and the magnetic field generating means that avoids heat must be removed from the ion source. There was a time when there was no way it would happen.
そこで本発明は、上記問題点に鑑みアノード電極を電子
供給源となるだめのマイクロ波放射体とし、熱陰極をな
くすことにより、イオン源が高温になることがなく、絶
縁物が絶縁破壊を起こすことなく長時間安定に金属イオ
ンを得ることができ、また陰極を磁極とすることができ
、永久磁石で磁気回路が組めてコンパクトに構成できる
金属イオン源の提供を目的とする。In view of the above problems, the present invention uses the anode electrode as a secondary microwave radiator that serves as an electron supply source and eliminates the hot cathode, thereby preventing the ion source from reaching a high temperature and causing dielectric breakdown of the insulator. To provide a metal ion source that can stably obtain metal ions for a long period of time without causing any problems, can use a cathode as a magnetic pole, and can be configured compactly by assembling a magnetic circuit with permanent magnets.
問題点を解決するだめの手段
上記問題点を解決するだめ、本発明の第１の発明は、イ
オン種導入口とイオン導出口を有する円筒状の放電室と
、その軸方向に磁界を印加する手段と、円筒状放電室の
両端に配置した陰極と、真ん中に配置したリングまたは
コイル状の陽極と、放電室の空間の一部に配置され陽極
に対して数十〜数百Ｖの負の電圧が印加されるスパッタ
リング電極と、放電室の外側においてイオン導出口に対
向して位置し電圧印加手段を有するイオン引出し電極と
を備え、前記陽極がマイクロ波放射手段を有するもので
ある。Means for Solving the Problems In order to solve the above problems, the first aspect of the present invention provides a cylindrical discharge chamber having an ion species introduction port and an ion exit port, and applying a magnetic field in the axial direction of the discharge chamber. means, a cathode placed at both ends of a cylindrical discharge chamber, a ring or coil-shaped anode placed in the middle, and a negative electrode of several tens to hundreds of volts with respect to the anode placed in a part of the space of the discharge chamber. The device includes a sputtering electrode to which a voltage is applied, and an ion extraction electrode located outside the discharge chamber facing the ion extraction port and having voltage application means, and the anode has microwave radiation means.
また、本発明の第２の発明は、イオン種導入口とイオン
導出口を有する円筒状の放電室と、その軸方向に磁界を
印加する手段と、円筒状放電室の両端に配置した陰極と
、真ん中に配置したリングまたはコイル状の陽極と、陽
極にマイクロ波を印加する手段と、放電室の空間の一部
に配置され陽極に対して数十〜数百Ｖの負の電圧が印加
されるスパッタリング電極と、放電室の外側においてイ
オン導出口に対向して位置し電圧印加手段を有するイオ
ン引き出し電極とを備え、前記イオン導出口を有する円
板が、磁性体でできているものである。A second aspect of the present invention also provides a cylindrical discharge chamber having an ion species inlet and an ion outlet, means for applying a magnetic field in the axial direction of the discharge chamber, and cathodes disposed at both ends of the cylindrical discharge chamber. , a ring or coil-shaped anode placed in the middle, a means for applying microwaves to the anode, and a negative voltage of several tens to hundreds of V applied to the anode placed in a part of the space of the discharge chamber. a sputtering electrode, and an ion extraction electrode located outside the discharge chamber facing the ion extraction port and having a voltage applying means, wherein the disk having the ion extraction port is made of a magnetic material. .
作 用 本発明の第１の発明の作用は次のようになる。For production The operation of the first aspect of the present invention is as follows.
すなわち、軸方向に磁界をかけ、両端の陰極、真ん中の
陽極によるＰＩＧ型の放電を行ない、陽極をマイクロ波
放射用のアンテナにしておくこと、陽極が電子供給源と
なり、熱陰極がなくても安定に高密度のプラズマを放電
室内に維持することができる。このとき放電室内にスパ
ッタリング電極を設けると金属イオン種を得ることがで
きる。In other words, by applying a magnetic field in the axial direction, a PIG type discharge is performed using the cathodes at both ends and the anode in the middle, and the anode is used as an antenna for microwave radiation.The anode becomes the electron source, and even without a hot cathode. High-density plasma can be stably maintained within the discharge chamber. At this time, if a sputtering electrode is provided in the discharge chamber, metal ion species can be obtained.
この結果、従来のように、イオン源を高温にすることな
く、多量の金属イオンを安定に得ることができる。As a result, a large amount of metal ions can be stably obtained without raising the ion source to a high temperature as in the conventional case.
また、本発明の第２の発明の作用は、放電室の側面から
イオンを引き出す場合、イオン引き出し口近傍を磁性体
にして突出させることによシ、プラズマがイオン引き出
し口近傍に押し出され、放電維持ガスのアルゴンイオン
に質量が近い金属イオンが、磁極間に捕獲されることな
く引き出される。In addition, when extracting ions from the side surface of the discharge chamber, the plasma is pushed out to the vicinity of the ion extraction port by making the area near the ion extraction port a magnetic material and protruding. Metal ions with a mass similar to the argon ions of the sustaining gas are extracted without being trapped between the magnetic poles.
実施例
以下、本発明の一実施例を添付図面にもとづいて説明す
る。Embodiment Hereinafter, one embodiment of the present invention will be described based on the accompanying drawings.
第１図において、１１は放電室で、イオン種導入口１２
とイオン導出口１３とを有している。１４はリング状の
永久磁石で、磁性体のイオン種導入口１２を有する継鉄
Ａ１ｓとやはり磁性体のイオン導出口１３を有する継鉄
Ｂ１６とで、磁気回路を形成し、継鉄Ａ１ｓと継鉄Ｂ１
６は中心に突起部を有しておシ、それぞれ磁極Ａ１７、
磁極Ｂ１８となシ、磁極Ａ１７と磁極Ｂ１８間の空隙に
１．２〜１．６ Ｋ Ｇａｕｓｓの磁界を得ることがで
きる。また、磁極Ａ１７と磁極Ｂ１８の先端にはそれぞ
れスパッタリング電極１９，１９が取シ付けである。継
鉄Ｂ１６の側面には、マイクロ波導入用のコネクター２
０が取り付けてあり、コネクター２０は中央に絶縁物２
１で支持された同軸線２２があり、同軸線２２には磁極
Ａと磁極Ｂの中間に位置するリング状のアンテナ２３が
挿入しである。また、イオン導出口１３に対向して、中
央に穴があるイオン引き出し電極２４が、絶縁物２６で
支持され継鉄Ｂ１６に取り付けである。In FIG. 1, 11 is a discharge chamber, and ion species introduction port 12
and an ion outlet 13. 14 is a ring-shaped permanent magnet, which forms a magnetic circuit with the yoke A1s having an ion species inlet 12 made of a magnetic material and the yoke B16 having an ion outlet 13 also made of a magnetic material, and is connected to the yoke A1s. Iron B1
6 has a protrusion in the center, and magnetic poles A17 and 6 have a protrusion in the center, respectively.
A magnetic field of 1.2 to 1.6 K Gauss can be obtained in the gap between the magnetic pole B18 and the magnetic pole A17 and the magnetic pole B18. Further, sputtering electrodes 19, 19 are attached to the tips of the magnetic pole A17 and the magnetic pole B18, respectively. Connector 2 for microwave introduction is installed on the side of the yoke B16.
0 is attached, and the connector 20 has an insulator 2 in the center.
There is a coaxial line 22 supported by a magnetic pole 1, and a ring-shaped antenna 23 located between magnetic poles A and B is inserted into the coaxial line 22. Further, facing the ion extraction port 13, an ion extraction electrode 24 having a hole in the center is supported by an insulator 26 and attached to the yoke B16.
このような構造において、第２図に示したように、磁極
Ａ１７と磁極Ｂ１８にアンテナ２３に対して数十〜数百
Ｖの負の電圧を電源２６によって印加すると、磁極Ａ１
７と磁極Ｂ１８が陰極、アンテナ２３が陽極となシ、軸
方向（Ｘ方向）に磁界があるので、イオン種導入口１２
からアルゴンを導入すると、Ｐ Ｉ Ｇ （Ｐｅｎｎｉ
ｎｇ ＩｏｎｉｚａｔｉｏｎＧａｕｇｅ ）放電が起こ
り、プラズマ２７が生成する。In such a structure, as shown in FIG. 2, when a negative voltage of several tens to hundreds of V is applied to the antenna 23 by the power supply 26 to the magnetic pole A17 and the magnetic pole B18, the magnetic pole A1
7 and magnetic pole B18 are cathodes, and the antenna 23 is an anode. Since there is a magnetic field in the axial direction (X direction), the ion species introduction port 12
When argon is introduced from P I G (Penni
ng Ionization Gauge) A discharge occurs and plasma 27 is generated.
この時、マイクロ波源２８か゛ら同軸線２９を通って、
コネクター２０を経てアンテナ２３からマイクロ波がプ
ラズマ２７に放射されるので、マイクロ波から、プラズ
マ２７中の電子にエネルギーがあたえられ、放電維持と
プラズマ密度の向上が行なわれる。このプラズマ２７中
のイオンがスパッタリング電極１９．１９を衝撃して、
金属材料をプラズマ２７中にスパッタする。このスパッ
タされた金属はプラズマ２７中でイオン化され、イオン
導出口１３から、高圧電源３ｏによシプラズマ２７に対
して負の電位差を与えられたイオン引き出し電極２４に
よシ、イオンビーム３１としてアルゴンイオンと金属イ
オンが同時に引き出される。At this time, the coaxial line 29 is passed from the microwave source 28,
Since microwaves are radiated from the antenna 23 to the plasma 27 via the connector 20, energy is given to electrons in the plasma 27 by the microwaves, thereby maintaining discharge and improving plasma density. Ions in this plasma 27 impact the sputtering electrode 19.19,
A metal material is sputtered into the plasma 27. This sputtered metal is ionized in the plasma 27, and from the ion extraction port 13, the ion extraction electrode 24, which is given a negative potential difference with respect to the plasma 27 by the high-voltage power supply 3o, emits argon ions as an ion beam 31. and metal ions are extracted at the same time.
次に本発明の第２の実施例について説明する。Next, a second embodiment of the present invention will be described.
第３図は第２の実施例を示しておシ、この実施例は、円
筒状放電室４１の側面中央にイオン導出口４２が配設さ
れている点が第１の実施例と大きく違る所である。放電
室４１はイオン種導入口４３とイオン導出口４２を有し
ておシ、イオン導出口４２の近傍は非磁性体の円板また
は円錐（例えば、φ２ｍｎの穴に対して、φ１０賜）で
ある。４４はリング状の永久磁石で、磁性体でできた継
鉄Ａ４６と継鉄Ｂ４６とで磁気回路を形成し、それぞれ
突起物を有しておシ、それが磁極Ａ４７と磁極Ｂ４８と
なシ、放電室４１に１．２〜１．６ Ｋ Ｇａｕｓｓの
磁界を得ることができる。また磁極Ａ４７の先端には磁
極Ａ４７と磁極Ｂとの中央に位置するようにスパッタリ
ング電極４９が取）付けてあり、そのスパッタリング電
極４９を取シ巻くようにコイル状のマイクロ波放射用ア
ンテナ６０がある。FIG. 3 shows a second embodiment, and this embodiment differs greatly from the first embodiment in that an ion outlet 42 is provided in the center of the side surface of a cylindrical discharge chamber 41. It is a place. The discharge chamber 41 has an ion species inlet 43 and an ion outlet 42, and the vicinity of the ion outlet 42 is a non-magnetic disk or cone (for example, φ10 diameter for a φ2 mm hole). be. 44 is a ring-shaped permanent magnet, which forms a magnetic circuit with a yoke A46 and a yoke B46 made of magnetic material, each having a protrusion, which is a magnetic pole A47 and a magnetic pole B48, A magnetic field of 1.2 to 1.6 K Gauss can be obtained in the discharge chamber 41. Further, a sputtering electrode 49 is attached to the tip of the magnetic pole A47 so as to be located in the center between the magnetic pole A47 and the magnetic pole B, and a coiled microwave radiation antenna 60 is wound around the sputtering electrode 49. be.
また、磁極へ４７と磁極Ｂ４Ｂの先端にはスパッタリン
グによる食刻を防止するだめに、スパッタリング１甑４
９と同じ材料のキャップ５１が付けである。In addition, to prevent etching due to sputtering, sputtering 47 is applied to the magnetic pole 47 and the tip of the magnetic pole B4B.
A cap 51 made of the same material as 9 is attached.
このような構造において、ＰＩＧ放電とマイクロ波放電
の複合作用で生成されたプラズマはイオン引き出し電極
６２によりイオンビームとして出てくる。In such a structure, plasma generated by the combined action of PIG discharge and microwave discharge is emitted as an ion beam by the ion extraction electrode 62.
次に本発明の第３の実施例について説明する。Next, a third embodiment of the present invention will be described.
第４図は第３の実施例を示してお９、この実施例では、
第２の実施例と同じ構造であるが、イオン導出口６１の
近傍が放電室６２の側面より突出した円板または円錐で
、磁性体でできている所が第２の実施例と大きく違う所
である。第４図は動作原理を示したもので、イオン導出
口６１の近傍（例えば、φ２ｍｎの穴に対してφ１０謳
）が放電室６２の側面よシも突出しており、磁極６３と
磁極６４の間隙磁力線６６がイオン導出口６１の近傍へ
引っ張られる。すなわち、プラズマ６６が磁力線６５の
作用でイオン導出口６１の方向Ｘに張り出てくる。第２
の実施例では放電維持用ガスのアルゴンイオンが、１．
２〜１．６ Ｋ Ｇａｕｓｓの磁界で捕獲されてスパッ
タリングには有効に作用するが引き出されにくくなシ、
その代や、アルゴンよりも数倍重い金属（たとえばＴａ
等）は、捕獲されずに優先的に引き出される。しかし、
アルゴンと同じぐらいの重さの金属（たとえばＴｉ 等
）は、捕獲されてしまうので、本実施例に示したように
イオン引き出し方向Ｘに磁界がもれるようにすることに
よυ、引き出され易くなる。すなわち、本実施例は比較
的軽い金属イオンに有効である。FIG. 4 shows a third embodiment.9 In this embodiment,
Although it has the same structure as the second embodiment, it differs greatly from the second embodiment in that the vicinity of the ion outlet 61 is a disk or cone protruding from the side surface of the discharge chamber 62 and is made of a magnetic material. It is. FIG. 4 shows the principle of operation. The vicinity of the ion outlet 61 (for example, φ10 hole for a φ2 mm hole) protrudes from the side surface of the discharge chamber 62, and the gap between the magnetic poles 63 and 64 is The magnetic lines of force 66 are pulled close to the ion outlet 61 . That is, the plasma 66 protrudes in the direction X of the ion outlet 61 due to the action of the magnetic lines of force 65. Second
In the embodiment, the argon ions of the discharge sustaining gas are 1.
It is captured by a 2 to 1.6 K Gaussian magnetic field and works effectively for sputtering, but is difficult to pull out.
metals several times heavier than argon (for example, Ta)
etc.) are preferentially extracted without being captured. but,
Metals that weigh about the same as argon (for example, Ti) will be captured, so by making the magnetic field leak in the ion extraction direction X as shown in this example, it can be easily extracted. Become. That is, this example is effective for relatively light metal ions.
発明の効果
本発明の金属イオン源によれば、以上のようにＰＩＧ型
スパッタイオン源の陽極部をマイクロ波放射体にするこ
とにより、熱陰極をなくすことができ、イオン源を高温
にすることなく、安定な高密度プラズマを生成すること
ができ、その結果イオン源が高温にならないのでＰＩＧ
放電用の陰極を磁気回路にすることができ、また永久磁
石を使用することができるのでコンパクト化を図ること
もできるのである。Effects of the Invention According to the metal ion source of the present invention, by using the anode portion of the PIG type sputter ion source as a microwave radiator as described above, the hot cathode can be eliminated and the ion source can be heated to a high temperature. PIG
Since the discharge cathode can be made into a magnetic circuit and a permanent magnet can be used, it is also possible to achieve compactness.
第１図は本発明の第１の実施例の金属イオン源の断面図
、第２図は金属イオン源の動作原理の説明図、第３図は
本発明の第２の実施例の金属イオン源の断面図、第４図
は本発明の第３の実施例の金属イオン源の動作原理を示
す図、第６図は従来の金属イオン源を示す断面図である
。
１１．４１．６２・・・・・・放電室、１２，４３・・
・・・・イオン種導入口、１３，４２．６１・・・・・
・イオン導出口、１４，４４・・・・・永久磁石、１７
、１８，４７゜４８．６３．６４・・・・・・磁極、
１９ 、４９・・・・′・・スパッタリング電極、２３
．５０・・・・・・アンテナ、２４゜６２・・・・・イ
オン引き出し電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ＩＩ
−−−Ｒｔ主
ｆ２−−一佳ソ５幣専入０
１３−−−イエソ養出口
ｆ４−一づに又石高ろ
１５− 珪醇Ｊ
ｆＧ”−ｍ＝ ・１Ｂ
１７− 磁極ハ
第１図 イＢ−ｈ Ｂ
ｔｑ−−一又ハ：、偽ルプ電５に
′２０−−−］キフター
２イ、２δ−−一珀来２に４匁
２２〜周ｔＩＩＩｌ線
２５−ア５デグ
２４−イ、Ｔ：、 Ｉｌぎｊ＝（哨Ｃ覧ｆ盃ンＱ
りｃ−４ｚ源
第 ２ 図
２７−−−７・ラス″７２８−−−マイクＤ
ジ茫戸、
縛−同１吻未墓、
３１−４；ｒゾビーム
第５図
ムFIG. 1 is a sectional view of a metal ion source according to a first embodiment of the present invention, FIG. 2 is an explanatory diagram of the operating principle of the metal ion source, and FIG. 3 is a metal ion source according to a second embodiment of the present invention. FIG. 4 is a diagram showing the operating principle of a metal ion source according to a third embodiment of the present invention, and FIG. 6 is a cross-sectional view showing a conventional metal ion source. 11.41.62...discharge chamber, 12,43...
...Ion species introduction port, 13,42.61...
・Ion outlet, 14, 44...Permanent magnet, 17
, 18,47°48.63.64...magnetic pole,
19, 49...'... Sputtering electrode, 23
．． 50...Antenna, 24°62...Ion extraction electrode. Name of agent: Patent attorney Toshio Nakao and one other person II
---Rt main f2--Ichika So 5 special 0 13--Ieso feed outlet f4-Izuunimata stone height 15-Kijo J fG"-m= ・1B 17-Magnetic pole Ha 1st Figure IB-h B tq--One-mataha:, fake loop electric 5'20--] Kifter 2-i, 2δ--Ikkalai 2 4 momme 22~circumtIIIl line 25-A5 deg 24 -I, T:, Ilgij=(C-4z Source Figure 2
27---7・ras''728---Mike D
Jiamudo, Bind - 1 Nosumi Tomb, 31-4; r Zobeam Figure 5
Claims (12)
放電室と、その軸方向に磁界を印加する手段と、円筒状
放電室の両端に配置した陰極と、真ん中に配置したリン
グまたはコイル状の陽極と、放電室の空間の一部に配置
され陽極に対して数十〜数百Ｖの負の電圧が印加される
スパッタリング電極と、放電室の外側においてイオン導
出口に対向して位置し電圧印加手段を有するイオン引き
出し電極とを備え、前記陽極がマイクロ波放射手段を有
する金属イオン源。(1) A cylindrical discharge chamber having an ion species inlet and an ion outlet, a means for applying a magnetic field in the axial direction, a cathode placed at both ends of the cylindrical discharge chamber, and a ring or coil placed in the middle. a sputtering electrode placed in a part of the space of the discharge chamber and to which a negative voltage of several tens to hundreds of volts is applied to the anode, and a sputtering electrode located outside the discharge chamber facing the ion extraction port. and an ion extraction electrode having a voltage applying means, the anode having a microwave emitting means.
アンテナである特許請求の範囲第１項記載の金属イオン
源。(2) The metal ion source according to claim 1, wherein the microwave radiation means is a ring or coiled antenna.
磁極部である特許請求の範囲第１項記載の金属イオン源
。(3) The metal ion source according to claim 1, wherein the cathode is a magnetic pole part of a magnetic circuit provided with means for applying a magnetic field.
範囲第３項記載の金属イオン源。(4) The metal ion source according to claim 3, wherein the means for applying the magnetic field is a permanent magnet.
特許請求の範囲第１項記載の金属イオン源。(5) The metal ion source according to claim 1, wherein the ion outlet is located at the center of the side surface of the cylindrical discharge chamber.
の範囲第１項記載の金属イオン源。(6) The metal ion source according to claim 1, wherein the ion outlet is on one side of the cathode.
る特許請求の範囲第１項記載の金属イオン源。(7) The metal ion source according to claim 1, wherein the axial magnetic field is 1.2 to 1.6 KGauss.
られた特許請求の範囲第１項記載の金属イオン源。(8) The metal ion source according to claim 1, wherein the sputtering electrode is attached to the tip of the cathode.
特許請求の範囲第１項記載の金属イオン源。(9) The metal ion source according to claim 1, wherein the sputtering electrode is arranged at the center of the anode.
の放電室と、その軸方向に磁界を印加する手段と、円筒
状放電室の両端に配置した陰極と、真ん中に配置したリ
ングまたはコイル状の陽極と、陽極にマイクロ波を印加
する手段と、放電室の空間の一部に配置され陽極に対し
て数十〜数百Ｖの負の電圧が印加されるスパッタリング
電極と、放電室の外側においてイオン導出口に対向して
位置し電圧印加手段を有するイオン引き出し電極とを備
え、前記イオン導出口を有する円板が、磁性体でできて
いる金属イオン源。(10) A cylindrical discharge chamber having an ion species inlet and an ion outlet, a means for applying a magnetic field in the axial direction, a cathode placed at both ends of the cylindrical discharge chamber, and a ring or coil placed in the middle. a means for applying microwaves to the anode; a sputtering electrode placed in a part of the space of the discharge chamber to which a negative voltage of several tens to hundreds of volts is applied to the anode; A metal ion source comprising: an ion extraction electrode located on the outside facing an ion extraction port and having a voltage applying means, the disk having the ion extraction port being made of a magnetic material.
の磁極部である特許請求の範囲第１０項記載の金属イオ
ン源。(11) The metal ion source according to claim 10, wherein the cathode is a magnetic pole part of a magnetic circuit provided with means for applying a magnetic field.
も３〜１０ｍｍ突出している特許請求の範囲第１０項記
載の金属イオン源。(12) The metal ion source according to claim 10, wherein the disk having the ion outlet protrudes from the side surface of the discharge chamber by 3 to 10 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27068087A JPH06101306B2 (en) | 1987-10-27 | 1987-10-27 | Metal ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27068087A JPH06101306B2 (en) | 1987-10-27 | 1987-10-27 | Metal ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01112639A true JPH01112639A (en) | 1989-05-01 |
| JPH06101306B2 JPH06101306B2 (en) | 1994-12-12 |
Family
ID=17489450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27068087A Expired - Lifetime JPH06101306B2 (en) | 1987-10-27 | 1987-10-27 | Metal ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06101306B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254047A (en) * | 1990-03-02 | 1991-11-13 | Nippon Telegr & Teleph Corp <Ntt> | Microwave ion gun |
| CN104916905A (en) * | 2014-03-14 | 2015-09-16 | 智象科技股份有限公司 | Transmission line load antenna module |
-
1987
- 1987-10-27 JP JP27068087A patent/JPH06101306B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254047A (en) * | 1990-03-02 | 1991-11-13 | Nippon Telegr & Teleph Corp <Ntt> | Microwave ion gun |
| CN104916905A (en) * | 2014-03-14 | 2015-09-16 | 智象科技股份有限公司 | Transmission line load antenna module |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06101306B2 (en) | 1994-12-12 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |