JPH01109349A - Production of reticle - Google Patents
Production of reticleInfo
- Publication number
- JPH01109349A JPH01109349A JP62266333A JP26633387A JPH01109349A JP H01109349 A JPH01109349 A JP H01109349A JP 62266333 A JP62266333 A JP 62266333A JP 26633387 A JP26633387 A JP 26633387A JP H01109349 A JPH01109349 A JP H01109349A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- pattern
- forming
- light
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000007261 regionalization Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011651 chromium Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 241001185311 Lyticum Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明社レチクル類の製法に関し、詳しくは、半導体集
積回路のパターン形成の際に使用されるレチクル、マス
クの製法に関し、特に露光の際の露光光の多重反射を防
止し九当該レチクル類を提供するものである。[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to the manufacturing method of reticles, more specifically, to the manufacturing method of reticles and masks used in forming patterns of semiconductor integrated circuits, especially during exposure. The present invention provides reticles that prevent multiple reflections of exposure light.
従来のレチクルは、一般に、石英などで形成された基盤
上に１金属クロム（Ｃｒ）などで構成されたパターン形
成用金属膜をスパッタなどの方法により成膜し、この上
に感光性（もしくは感電子線性）樹脂を塗布し、光もし
くは電子朦によシバターニングし、現象後エツチングに
より金属膜のパターンを形成していた。Conventional reticles are generally made by forming a pattern-forming metal film made of a single metal such as chromium (Cr) on a substrate made of quartz or the like by sputtering or other methods, and then applying a photosensitive (or sensitive) film on top of this. A metal film pattern was formed by applying an electron beam (electron beam) resin, patterning with light or electron radiation, and etching after the phenomenon.
この従来技術では、形成された金属膜パターン表面およ
び基盤表面での露光光の反射については考慮されていな
い。その為、レチクルを透過した露光光が縮小露光装置
内のレンズ表面および露光されるウニ八表面で一部反射
され、レチクル−レンズ−ウェハ間で有害な多重反射光
（迷光）が生ずる。この多重反射光により、本来露光を
必要としないウェハ上の部分も露光してしまい、ウェハ
パターンの形成精度に悪影響を及ぼすと言う問題があっ
た。This conventional technique does not take into consideration the reflection of exposure light on the surface of the formed metal film pattern and the surface of the substrate. Therefore, the exposure light transmitted through the reticle is partially reflected by the surface of the lens in the reduction exposure device and the surface of the surface to be exposed, causing harmful multiple reflection light (stray light) between the reticle, lens, and wafer. This multiple reflected light causes a problem in that areas on the wafer that do not originally require exposure are also exposed, which adversely affects the accuracy of forming wafer patterns.
これを防止するために、ガラス基盤のパターンを形成し
ようとする面に酸化クロム膜、金属クロム膜、酸化クロ
ム膜の三層膜を形成し、これを、パターニングして形成
するレチクルが提案されている。これによシ、パターン
部での反射（多重反射）は防止されるが、パターンのな
いガラス基盤部分では当該反射が起こり、多重反射を引
き起こす原因となっており、また、この構造のレチクル
は三層にわたるエツチングを必要とし、その製造工程が
複雑になるなどの問題があった。To prevent this, a reticle has been proposed in which a three-layer film of a chromium oxide film, a metal chromium film, and a chromium oxide film is formed on the surface of the glass substrate on which the pattern is to be formed, and this is then patterned. There is. This prevents reflections (multiple reflections) at the pattern part, but the reflections occur at the glass base part where there is no pattern, causing multiple reflections, and the reticle with this structure has three There are problems in that it requires etching over multiple layers, which complicates the manufacturing process.
なお、当該レチクルについて述べた特許の例としては、
特開昭５５−５５５３７で公報があげられる。Examples of patents that describe the reticle are:
A publication is given in JP-A-55-55537.
本発明の目的はかかる従来技術の有する欠点を解消し、
製法的に簡略化された方法で、前述のごとき多重反射を
防止したレチクルを得ることにある。The purpose of the present invention is to eliminate the drawbacks of such prior art,
The object of the present invention is to obtain a reticle that prevents multiple reflections as described above using a manufacturing method that is simplified.
本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.
〔問題点を解決するための手段〕および〔作用〕本願に
おいて開示される発明のうち代表的なものの概＊を簡単
に説明すれば、下記のとおりである。[Means for Solving the Problems] and [Operations] A brief outline* of representative inventions disclosed in this application is as follows.
本発明では、レチクル基盤のパターンを形成しようとす
る面に先ず反射防止膜を全面に形成し、次いでこの反射
防止膜表面にパターンを形成するか、あるいは、先ず、
パターンを形成後、当該パターンを被覆してその全面に
反射防止膜を形成するようＫする。In the present invention, an anti-reflection film is first formed on the entire surface of the reticle base on which a pattern is to be formed, and then a pattern is formed on the surface of this anti-reflection film, or, alternatively, first,
After forming the pattern, the pattern is coated with K so as to form an antireflection film on the entire surface.
このようにすることにより、三層エツチングする従来技
術に比して簡略化された方法でレチクルを得ることがで
き、また、反射防止膜が全面に形成されているので、多
重反射が防止され、従来のレチクルの欠点を解消するこ
とができた。By doing this, it is possible to obtain a reticle using a simpler method than the conventional technique of three-layer etching, and since the anti-reflection film is formed on the entire surface, multiple reflections are prevented. We were able to eliminate the drawbacks of conventional reticles.
すなわち、縮小投影露光装置内のレンズまたはウニ八表
面にて反射された露光光がレチクル表面に達しても、レ
チクル基盤表面で紘反射防止膜の作用により、露光光の
反射は起らず、レチクル中を透過して有害な多重反射光
は生じない。また、金属パターン表面では反射防止膜の
作用により、露光光は吸収されて多重反射光は生じない
。In other words, even if the exposure light reflected from the lens or surface of the reduction projection exposure device reaches the reticle surface, the exposure light will not be reflected due to the action of the anti-reflection coating on the reticle base surface, and the reticle No harmful multiple reflections of light will be transmitted through it. Furthermore, due to the action of the antireflection film on the surface of the metal pattern, the exposure light is absorbed and no multiple reflection light occurs.
そして、上記において、パターン形成面の反対面全面に
も反射防止膜を形成するととＫよシ、露光に際しての集
光レンズ側でのパターン形成に有害な多重反射を防止で
きるので、より一層好ましいものとなる。In the above, it is even more preferable to form an anti-reflection film on the entire surface opposite to the pattern formation surface, since it is possible to prevent multiple reflections harmful to pattern formation on the condensing lens side during exposure. becomes.
次に、本発明を、図面を参照しつつ頁に詳述する。 The invention will now be explained in detail in the following pages with reference to the drawings.
第４図は本発明の使用態様の一例を示す概念構成図で、
同図にて、１は紫外線光源、２は集光レンズ、３はレチ
クル、４は結像レンズ、５はウェハである。光源１から
の光は集光レンズ２によル集光され、レチクル３を照射
し、その光は、結像レンズ４にて、当該レチクル３のパ
ターンを例えば１１５の縮小倍率にてウエノ・５の表面
に縮小投影する。FIG. 4 is a conceptual configuration diagram showing an example of how the present invention is used.
In the figure, 1 is an ultraviolet light source, 2 is a condenser lens, 3 is a reticle, 4 is an imaging lens, and 5 is a wafer. The light from the light source 1 is focused by the condensing lens 2 and illuminates the reticle 3, and the light is transmitted to the imaging lens 4 to form a Ueno-5 pattern on the reticle 3 at a reduction magnification of, for example, 115. Reduce and project onto the surface of
第１図は本発明の実施例を示すレチクル３の要部構成断
面図で、レチクル基盤６０表面金面を反射防止膜７によ
シ被覆し、当該反射防止膜７表面にパターン８を形成し
て成る。FIG. 1 is a cross-sectional view of the main part of a reticle 3 showing an embodiment of the present invention, in which the gold surface of a reticle base 60 is coated with an anti-reflection film 7, and a pattern 8 is formed on the surface of the anti-reflection film 7. It consists of
このレチクル３は、レチクル基盤６の表面全体に反射防
止膜７ｔ−スパッタ技術などにより形成後、該反射防止
膜７表面全体に同様にスパッタ技術などＫよりパターン
形成用金属膜を成膜し、エツチングなどの方法を用いて
パターン８ｔ−形成することＫより製造することができ
る。This reticle 3 is made by forming an anti-reflection film 7 on the entire surface of the reticle base 6 by using a sputtering technique or the like, and then forming a pattern-forming metal film on the entire surface of the anti-reflection film 7 using a sputtering technique or the like, followed by etching. The pattern 8t can be manufactured by forming the pattern 8t using the method described above.
第２図は本発明の他の実施例を示すレチクル３の要部構
成断面図で、レチクル基盤６表面に形成されたパターン
８を含めて、当該基盤表面全体を反射防止膜７により被
覆して成る。FIG. 2 is a cross-sectional view of the main part of a reticle 3 showing another embodiment of the present invention, in which the entire surface of the reticle base 6, including the pattern 8 formed on the surface, is covered with an anti-reflection film 7. Become.
このレチクル３は、従来例に従い、レチクル基盤６表面
にパターン８を形成後に、反射防止膜７を成膜するとと
Ｋよシ製造することができる。This reticle 3 can be manufactured in a conventional manner by forming a pattern 8 on the surface of a reticle base 6 and then forming an antireflection film 7 thereon.
第３図（ａ）Ｋ示すレチクル３は、第１図に示すレチク
ルのパターン形成面に対する反対面全体を、さらに、反
射防止膜７によシ被覆したもので、また、第３図（ｂ）
に示すレチクル３は、第２図に示すレチクルのパターン
形成面に対する反対面を、さらに、反射防止膜７により
被覆したもので、当該第３図（ａ） 、 （ｂ）に示す
断面構造のレチクル３は、第１図および第２図に示すレ
チクル完成後に、当該反対面にスパッタ技術などにより
反射防止膜を成膜するようＫしてもよいし、あるいは、
予じめ、反射防止膜７を形成したレチクル基盤６を用い
て前述の製法に従い製造してもよい。The reticle 3 shown in FIG. 3(a)K is such that the entire surface opposite to the pattern forming surface of the reticle shown in FIG. 1 is further coated with an antireflection film 7, and the reticle 3 shown in FIG.
The reticle 3 shown in FIG. 2 has an antireflection film 7 further coated on the opposite surface to the pattern forming surface of the reticle shown in FIG. 2, and has a cross-sectional structure shown in FIGS. 3(a) and 3(b). In step 3, after the reticle shown in FIGS. 1 and 2 is completed, an antireflection film may be formed on the opposite surface by sputtering technology, or,
The reticle substrate 6 may be manufactured using the reticle base 6 on which the antireflection film 7 has been formed in advance according to the manufacturing method described above.
本発明に使用されるレチクル基盤６は、例えば透明石英
板によシ構成される。The reticle base 6 used in the present invention is made of, for example, a transparent quartz plate.
反射防止膜７は、例えば酸化シリコン（８ｉ０．）、７
ツ化リチクム（ＬｉＦ）によシ構成される。当該反射防
止ｊ１７の膜厚は、それをｄとすると次の条件式を充足
する必要がある。The antireflection film 7 is made of, for example, silicon oxide (8i0.), 7
It is composed of lyticum tufa (LiF). The film thickness of the anti-reflection film j17 needs to satisfy the following conditional expression, where it is d.
すなわち、当該反射防止膜７としては、反射効果の他露
光に支障のないものによシ構成する必要があり、従って
、その構成材料としては、酸化クロムは余〕好ましくな
く、上記ＳｔＯ，またはＬｉｄによることが好ましい。That is, the anti-reflection film 7 needs to be composed of a material that has a reflective effect and does not hinder exposure. Therefore, chromium oxide is not preferable as its constituent material, and the above-mentioned StO or Lid Preferably.
パターン８は例えばＣｒにより構成される。The pattern 8 is made of Cr, for example.
本発明の上記第１図に示す構造のレチクル３によれば、
縮小投影露光装置内のレンズ４やウェハ５などによって
反射された露光光が、当該レチクル３表面に入射ぜんと
する時に、反射防止膜７の上下の表両で露光光が反射さ
れ、それぞれの光波の位相が１８０°ずれるため光波の
打ち消し合いが生じて、反射光が無くなる。According to the reticle 3 of the present invention having the structure shown in FIG.
When the exposure light reflected by the lens 4, wafer 5, etc. in the reduction projection exposure device is incident on the surface of the reticle 3, the exposure light is reflected by the upper and lower surfaces of the anti-reflection film 7, and each light wave is Since the phases of the two are shifted by 180 degrees, the light waves cancel each other out, and there is no reflected light.
また、第２１１に示す構造のレチクル３によれば、レチ
クル基盤６の表面のみならず、パターン８の表面での露
光光の反射も防止できる。Further, according to the reticle 3 having the structure shown in No. 211, reflection of exposure light not only on the surface of the reticle base 6 but also on the surface of the pattern 8 can be prevented.
さらに、第３図（ａ） ＊ （ｂ）Ｋ示す構造のレチク
ル３では、上記構造のレチクルに対する機能に加えて、
レチクル３の集光レンズ２側でのウェハ上パターン形成
に有害な多重反射をも防止できるという付加機能をも加
えることができた。Furthermore, in the reticle 3 having the structure shown in FIGS. 3(a) * (b)K, in addition to the functions for the reticle having the above structure,
It was also possible to add the additional function of preventing multiple reflections harmful to the pattern formation on the wafer on the condenser lens 2 side of the reticle 3.
このように、結像系のコントラストを低下させる要因で
あるレチクル−レンズ、レチクル−ウェハ間などでの多
重反射を低減させることができるので、精度の高いパタ
ーニングを可能とすることができた。In this way, multiple reflections between the reticle and the lens, between the reticle and the wafer, etc., which are factors that reduce the contrast of the imaging system, can be reduced, making it possible to perform patterning with high precision.
そして、このような無反射レチクルを、レチクル作成上
の工程が簡略化され九製法で得ることが −できた。Furthermore, such a non-reflective reticle could be obtained by a nine-manufacturing method by simplifying the reticle manufacturing process.
以上本発明者によりてなされた発明を実施例にもとづき
臭体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。Although the invention made by the present inventor has been described in detail based on the examples, the present invention is not limited to the above examples, and it is understood that various changes can be made without departing from the gist of the invention. Needless to say.
以上の説明では主として本発明者によってなされた発明
をその背景となり九利用分野であるレチクルに適用し几
場合について説明したが、それに限定されるものではな
く、１：１投影露光装置用マスクなどにも適用すること
ができる。In the above explanation, the invention made by the present inventor was mainly applied to reticles, which is the background of the invention, and is used in nine fields of application. can also be applied.
本願において開示される発明のうち代表的なものにより
て得られる効果を簡単に説明すれば、下記のとうりであ
る。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.
本発明によれば、微細パターン形成時に有害となる多重
反射を低減させることができるため、寸法精度の良い、
高いコントラストをもつパターン形成技術を提供するこ
とができた。According to the present invention, it is possible to reduce multiple reflections that are harmful when forming fine patterns.
We were able to provide a pattern forming technology with high contrast.
第１図は本発明の実施例を示す要部断面図、第２図は本
発明の他の実施例を示す要部断面図、第３図（ａ） ？
（ｂ）はそれぞれ本発明のさらに他の実施例を示す要
部断面図、
第４図は本発明に係るレチクルの使用態様の一例を示す
説明図である。Fig. 1 is a sectional view of a main part showing an embodiment of the present invention, Fig. 2 is a sectional view of a main part showing another embodiment of the invention, and Fig. 3(a).
(b) is a cross-sectional view of a main part showing still another embodiment of the present invention, and FIG. 4 is an explanatory diagram showing an example of a mode of use of the reticle according to the present invention.
Claims (1)
形成し、その後当該反射防止膜表面にパターン形成用膜
を成膜し、パターニングを行ってパターンを形成するこ
とを特徴とする光多重反射を防止したレチクル類の製法
。 ２、レチクル類が、パターン形成面に対する反対面にも
反射防止膜を形成して成る、特許請求の範囲第１項記載
のレチクル類の製法。 ３、レチクル基盤のパターン形成面にパターン形成膜を
成膜後、パターニングを行ってパターン形成を行った後
、パターンを含んで当該パターン形成面全面に反射防止
膜を形成することを特徴とする光多重反射を防止したレ
チクル類の製法。 ４、レチクル類が、パターン形成面に対する反対面にも
反射防止膜を形成して成る、特許請求の範囲第３項記載
のレチクル類の製法。[Claims] 1. An antireflection film is formed on the entire pattern formation surface of the reticle base, and then a pattern formation film is formed on the surface of the antireflection film, and patterning is performed to form a pattern. A manufacturing method for reticles that prevents multiple reflections of light. 2. The method for manufacturing reticles according to claim 1, wherein the reticles have an antireflection film formed on the opposite surface to the pattern-forming surface. 3. A light beam characterized by forming a pattern forming film on the pattern forming surface of a reticle base, performing patterning to form a pattern, and then forming an antireflection film on the entire pattern forming surface including the pattern. A manufacturing method for reticles that prevents multiple reflections. 4. The method for manufacturing reticles according to claim 3, wherein the reticles have an antireflection film formed on the opposite surface to the pattern-forming surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62266333A JPH01109349A (en) | 1987-10-23 | 1987-10-23 | Production of reticle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62266333A JPH01109349A (en) | 1987-10-23 | 1987-10-23 | Production of reticle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01109349A true JPH01109349A (en) | 1989-04-26 |
Family
ID=17429474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62266333A Pending JPH01109349A (en) | 1987-10-23 | 1987-10-23 | Production of reticle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01109349A (en) |
-
1987
- 1987-10-23 JP JP62266333A patent/JPH01109349A/en active Pending
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