JPH01107588A - Solid-state laser apparatus - Google Patents
Solid-state laser apparatusInfo
- Publication number
- JPH01107588A JPH01107588A JP26568487A JP26568487A JPH01107588A JP H01107588 A JPH01107588 A JP H01107588A JP 26568487 A JP26568487 A JP 26568487A JP 26568487 A JP26568487 A JP 26568487A JP H01107588 A JPH01107588 A JP H01107588A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- medium
- semiconductor laser
- solid
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 230000005284 excitation Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000003507 refrigerant Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、固体レーザ装置に関し、特にレーデ媒質を効
率良く励起せしめる構造に閃するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a solid-state laser device, and particularly relates to a structure for efficiently exciting a Rade medium.
（従来の技術）
従来、半導体レーザを励起光源として、レーザ媒質を励
起する固体レーザ装置としては第３図に示す装置があっ
た０図において、２０は半導体レーザ素子で、例えば波
長０．８０８μｍのＧａＡｊ！Ａｓからなる。２１．２
２は光学レンズ、２３はＹＡＧレーザロッドで、該ＹＡ
Ｇレーザロッド２３の光学レンズ２１．２２側にＭｇＦ
、などの誘電体多層コーテイング膜２４が施しである。(Prior Art) Conventionally, as a solid-state laser device that excites a laser medium using a semiconductor laser as an excitation light source, there is a device shown in FIG. 3. In FIG. GaAj! Consisting of As. 21.2
2 is an optical lens, 23 is a YAG laser rod, and the YA
MgF on the optical lens 21 and 22 side of the G laser rod 23
A dielectric multilayer coating film 24 such as , etc. is applied.
２５はＫ Ｔ ｉ ＯＰ Ｏａの非線形光学材料からな
る２倍高調波素子、２６は出力ミラーである６以上で構
成される固体レーザ装置の動作について説明する。25 is a double harmonic element made of a nonlinear optical material of K T i OP Oa, and 26 is an output mirror. The operation of a solid-state laser device composed of six or more elements will be described.
半導体レーザ素子２０より出射されたレーザ光２７は、
光学レンズ２１により平行光に、さらに光学レンズ２２
より集光され誘電体多層コ−ティング膜２４に入射され
る。該レーザ光２７は、該誘電体多層コーテイング膜２
４を透過し、励起光としてＹＡＧレーザロッド２３に採
り入れられ、該ＹＡＧレーザロッド２３を励起し、発振
波長が１．０６μｍのレーザ光２８を発振せしめる。該
レーザ光２８は、２倍高調波素子２５により波長変換さ
れ、出力ミラー２６に入射される。ここで、前記誘電体
多層コーテイング膜２４は波長０６８μｍなるレーザ光
は透過するが波長１．０６μｍのレーザ光は全反射する
特性を有し、この特性を利用して、前記出力ミラー２６
と前反射ミラーとしての機能をもつ該誘電体多層コーテ
イング膜２４との間でレーザ光２８は反射往復し、所定
の出力に達したのち該出力ミラー２６より出力されてい
た。なお、２倍高調波素子２５は、前光レーザ光２８を
波長１．０６ＩＩｍから０．５３μｍに変換する機能を
もつが、不必要の時は該２倍高調波素子２４は除外して
も良いとされていた。The laser beam 27 emitted from the semiconductor laser element 20 is
The optical lens 21 converts the light into parallel light, and the optical lens 22
The light is focused and incident on the dielectric multilayer coating film 24. The laser beam 27 is transmitted to the dielectric multilayer coating film 2.
4 and is introduced into the YAG laser rod 23 as excitation light, which excites the YAG laser rod 23 to oscillate a laser beam 28 with an oscillation wavelength of 1.06 μm. The laser beam 28 is wavelength-converted by the double harmonic element 25 and is incident on the output mirror 26 . Here, the dielectric multilayer coating film 24 has a characteristic of transmitting a laser beam having a wavelength of 068 μm but totally reflecting a laser beam having a wavelength of 1.06 μm.Using this characteristic, the output mirror 24
The laser beam 28 is reflected back and forth between the laser beam 28 and the dielectric multilayer coating film 24 which functions as a front reflection mirror, and is output from the output mirror 26 after reaching a predetermined output. Note that the double harmonic element 25 has a function of converting the front laser beam 28 from a wavelength of 1.06 IIm to 0.53 μm, but the double harmonic element 24 may be excluded when unnecessary. It was said that
（発明が解決しようとする問題点）
しかるに、従来の半導体レーザ励起式固体レーザ装置で
は、現状の半導体レーザ素子は得られる出力が高々ＩＷ
であり、しかも従来の固体レーザ装置の如＜ ＹＡＧレ
ーザロッドの軸方向に励起する方法では、該ＹＡＧレー
ザロッドから得られるレーザ出力は数百ｍ Ｗ Ｌ、か
得られない為に使用用途が限定されるという問題が生じ
ていた。(Problems to be Solved by the Invention) However, in the conventional semiconductor laser pumped solid-state laser device, the output of the current semiconductor laser element is at most IW.
Moreover, with the method of exciting the YAG laser rod in the axial direction, as with conventional solid-state laser devices, the laser output obtained from the YAG laser rod is only a few hundred m W L, so the usage is limited. There was a problem of being exposed.
また、現状の半導体レーザ素子はその特性から周囲温度
により出力が変動するために、結果としてＹＡＧレーザ
ロッドから得られるレーザ出力も変動してしまうという
悪循環になっていた。さらには、従来の固体レーザ装置
ではＹＡＧレーザロッド端面に誘電体多層コーティング
層を施していた為に水冷方式が使用できずに空冷方式の
みの冷却方法であったので、固体レーザ装置の温度制御
が不確実となり、レーザ出力が安定しないという問題を
生じていた。Furthermore, due to the characteristics of current semiconductor laser elements, the output fluctuates depending on the ambient temperature, resulting in a vicious cycle in which the laser output obtained from the YAG laser rod also fluctuates. Furthermore, in conventional solid-state laser devices, a dielectric multilayer coating layer was applied to the end face of the YAG laser rod, making it impossible to use water cooling and requiring air cooling as the only cooling method. This caused the problem that the laser output was unstable.
（問題点を解決するための手段および作用）本発明は、
かかる従来の問題点に鑑みなされたものであり、固体結
晶をレーザ媒質とし、励起光源で該レーザ媒質を励起せ
しめレーザ発振させる固体レーザにおいて、該励起光源
が半導体レーザ素子からなり、該半導体レーザ素子が前
記レーザ媒質の円周方向に配されてなることを特徴とす
る固体レーザ装置を提供することにある。(Means and effects for solving the problems) The present invention has the following features:
This was developed in view of such conventional problems, and in a solid-state laser that uses a solid crystal as a laser medium and excites the laser medium with an excitation light source to cause laser oscillation, the excitation light source is composed of a semiconductor laser element, and the semiconductor laser element An object of the present invention is to provide a solid-state laser device, characterized in that the laser medium is arranged in the circumferential direction of the laser medium.
また、前記半導体レーザの出射光が、前記レーザ媒質の
円周方向全周にわたり供給できるように、該半導体レー
ザ素子が複数個配されてなることを特徴とする固体レー
ザ装置であり、さらには、前記レーザ媒質と前記半導体
レーザが冷媒水により冷却されてなることを特徴とする
固体レーザ装置を提供することにある。Further, the solid-state laser device is characterized in that a plurality of semiconductor laser elements are arranged so that the emitted light of the semiconductor laser can be supplied over the entire circumference of the laser medium in the circumferential direction, and further, It is an object of the present invention to provide a solid-state laser device characterized in that the laser medium and the semiconductor laser are cooled by coolant water.
（実施例） 以下、図面に基づいて本発明の詳細な説明する。(Example) Hereinafter, the present invention will be described in detail based on the drawings.
第１図は、本発明に係る固体レーザ装置の概略構成図で
ある。図において、１は固体結晶からなるレーザ媒質、
２はロッドホルダ、３はホルダキャップ、４は冷媒、例
えば純水などを送水する送水管で５なる方向に流入する
。６は、冷媒の排水管で７なる方向に排出する。８は、
半導体レーザ素子９を配してなる円筒体、１０は半導体
レーザ素子９に電圧を印加するケーブル、１１は電源、
１２は収納器、１３は全反射ミラー、１４は出力ミラー
、１５は基台である。FIG. 1 is a schematic configuration diagram of a solid-state laser device according to the present invention. In the figure, 1 is a laser medium made of solid crystal;
2 is a rod holder, 3 is a holder cap, and 4 is a water pipe for feeding a refrigerant, such as pure water, which flows in the direction 5. 6 is a refrigerant drain pipe that discharges the refrigerant in the direction 7. 8 is
A cylindrical body including a semiconductor laser element 9, 10 a cable for applying voltage to the semiconductor laser element 9, 11 a power source,
12 is a storage container, 13 is a total reflection mirror, 14 is an output mirror, and 15 is a base.
ここで、レーザ媒質１の周囲に配してなる半導体レーザ
素子９を具備した円筒体８の断面図を第２図に示す。Here, a cross-sectional view of a cylindrical body 8 provided with a semiconductor laser element 9 arranged around the laser medium 1 is shown in FIG.
次に動作について説明する。Next, the operation will be explained.
電１１１１より印加された電圧はケーブル１０を通して
、円筒体８に配された半導体レーザ素子９に印加される
。該半導体レーザ素子９は０．７５μｍ−０，８３，ｕ
ｎなる波長を有するレーザ光８ｂを、第２図に示す如く
、レーザ媒ｆｆｌに向って出射する。前記半導体レーザ
素子９は、レーザ媒質ｌの円筒上に配列されていること
から、該レーザ媒質ｌの全周上にレーザ光８ｂが照射さ
れる。該レーザ光８ｂにて励起されたレーザ媒ｉｔはレ
ーザ発振し、収納器１２外に配された全反射ミラー１３
と出力ミラー１４との間をロッドホルダ２を通して反射
を適宜繰り返し、その後出力ミラー１４よりレーザ光が
出力される。The voltage applied from the voltage source 1111 is applied to the semiconductor laser element 9 disposed on the cylindrical body 8 through the cable 10 . The semiconductor laser element 9 has a diameter of 0.75 μm-0.83,u
A laser beam 8b having a wavelength n is emitted toward the laser medium ffl, as shown in FIG. Since the semiconductor laser elements 9 are arranged on the cylinder of the laser medium l, the laser beam 8b is irradiated onto the entire circumference of the laser medium l. The laser medium it excited by the laser beam 8b oscillates, and the total reflection mirror 13 disposed outside the container 12
After passing through the rod holder 2 and repeating reflection as appropriate between the laser beam and the output mirror 14, the laser beam is outputted from the output mirror 14.
一般的に、励起光源としての役目をなす半導体レーザ素
子９と、該励起光により励起されたレーザ媒質１とは、
レーザを発振するとともに多量の熱をも発生する。この
熱のために得られたレーザ光の出力が変動し、安定した
動作をしなくなるが、これを防止する目的で、前記円筒
体８に配された送水管４より冷媒を５なる方向に送水し
、該円筒体内８ａを充満し、半導体レーザ素子９とレー
ザ媒質１とを冷却する。冷媒は、ホルダキャップ３によ
りロッドホルダ２内に漏水するのを防止している。又冷
媒は、所期の冷却作用をなしたのち排水管６により７な
る方向に排水される。Generally, the semiconductor laser element 9 serving as an excitation light source and the laser medium 1 excited by the excitation light are:
Along with oscillating a laser, it also generates a large amount of heat. Due to this heat, the output of the laser beam obtained fluctuates and the operation becomes unstable, but in order to prevent this, the refrigerant is sent in the direction of 5 from the water pipe 4 arranged in the cylindrical body 8. Then, the cylindrical body 8a is filled, and the semiconductor laser element 9 and the laser medium 1 are cooled. The refrigerant is prevented from leaking into the rod holder 2 by the holder cap 3. Further, after the refrigerant has achieved the desired cooling effect, it is drained in the direction indicated by 7 through the drain pipe 6.
前記円筒体８内に充満された冷媒が該円筒体８外に漏水
した場合、収納器１２及び基台１５により水もれを防止
し、半導体レーザ素子を励起する電源１１等に不良が発
生しないような作用もなしている。If the refrigerant filled in the cylindrical body 8 leaks out of the cylindrical body 8, the container 12 and the base 15 prevent the water from leaking, and no defects occur in the power supply 11 etc. that excite the semiconductor laser element. It also has a similar effect.
（発明の効果）
以上詳述したように本発明によれば、レーザ媒質の円周
方向に半導体レーザ素子が配されてなり、半導体レーザ
素子からの出射光が該レーザ媒質の全周にわたり供給で
きるために、レーザ発振効率が、従来の固体レーザ装置
と比較して約５倍以−上も向上し、かつ冷媒により前記
半導体レーザ素子とし゛−ザ媒質とを冷却できることか
ら安定したレーザ光を取り出すことができる。(Effects of the Invention) As detailed above, according to the present invention, the semiconductor laser element is arranged in the circumferential direction of the laser medium, and the emitted light from the semiconductor laser element can be supplied over the entire circumference of the laser medium. Therefore, the laser oscillation efficiency is improved by about 5 times or more compared to conventional solid-state laser devices, and since the semiconductor laser element and the laser medium can be cooled with a coolant, stable laser light can be extracted. Can be done.
さらには、励起光源である半導体レーザ素子とレーザ媒
質を同時に冷却できる構造なために、固体レーザ装置の
内容量が１／３〜１１５にも小型化できる効果も有して
いる。Furthermore, since the structure allows simultaneous cooling of the semiconductor laser element that is the excitation light source and the laser medium, it also has the effect that the internal capacity of the solid-state laser device can be reduced to 1/3 to 115 times.
第１図は、本発明に係る固体レーザ装置の概略構成図、
第２図は本発明の構成を具体的に示す断面図、第３図は
従来例を示す図である。
１・・・レーザ媒Ｗ ２・・・ロッドホルダ３
・・・ホルダキャップ ８・・・円筒体９・・・半導
体レーザ素子 １１・・・電源１２・・・収納器
１３・・・全反射ミラー１４・・・出力ミラー
１５・・・基台出願人 株式会社小松製
作所
代理人 （弁理士） 岡 １）和 喜
口＝：よ−！
に＝＝ココ−
−Ｌ−」−８FIG. 1 is a schematic configuration diagram of a solid-state laser device according to the present invention,
FIG. 2 is a sectional view specifically showing the structure of the present invention, and FIG. 3 is a diagram showing a conventional example. 1... Laser medium W 2... Rod holder 3
... Holder cap 8 ... Cylindrical body 9 ... Semiconductor laser element 11 ... Power supply 12 ... Container
13... Total reflection mirror 14... Output mirror
15... Base applicant Komatsu Ltd. Agent (patent attorney) Oka 1) Wa Kiguchi =: Yo-! ni==Coco--L-"-8
Claims (3)
媒質を励起せしめ、レーザ発振させる固体レーザにおい
て、該励起光源が半導体レーザ素子からなり、該半導体
レーザ素子が前記レーザ媒質の円周方向に配されてなる
ことを特徴とする固体レーザ装置。(1) In a solid-state laser that uses a solid crystal as a laser medium and excites the laser medium with an excitation light source to oscillate the laser, the excitation light source is composed of a semiconductor laser element, and the semiconductor laser element extends in the circumferential direction of the laser medium. A solid-state laser device characterized by comprising:
円周方向全周にわたり供給できるように、該半導体レー
ザ素子が複数個配されてなることを特徴とする特許請求
範囲第１項記載の固体レーザ装置。(2) A plurality of semiconductor laser elements are arranged so that the emitted light of the semiconductor laser can be supplied over the entire circumference of the laser medium in the circumferential direction. Solid state laser device.
より冷却されてなることを特徴とする特許請求範囲第１
項記載の固体レーザ装置。(3) Claim 1, characterized in that the laser medium and the semiconductor laser are cooled by coolant water.
The solid-state laser device described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26568487A JPH01107588A (en) | 1987-10-21 | 1987-10-21 | Solid-state laser apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26568487A JPH01107588A (en) | 1987-10-21 | 1987-10-21 | Solid-state laser apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01107588A true JPH01107588A (en) | 1989-04-25 |
Family
ID=17420565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26568487A Pending JPH01107588A (en) | 1987-10-21 | 1987-10-21 | Solid-state laser apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01107588A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0586278A1 (en) * | 1992-08-17 | 1994-03-09 | Ishikawajima-Harima Heavy Industries Co., Ltd. | Laser generating apparatus |
-
1987
- 1987-10-21 JP JP26568487A patent/JPH01107588A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0586278A1 (en) * | 1992-08-17 | 1994-03-09 | Ishikawajima-Harima Heavy Industries Co., Ltd. | Laser generating apparatus |
| US5373527A (en) * | 1992-08-17 | 1994-12-13 | Ishikawajima-Harima Heavy Industries Co., Ltd. | Laser generating apparatus having an arrangement for converging and diverging excitation light |
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