JPH01106420A - Chemical vapor deposition device - Google Patents
Chemical vapor deposition deviceInfo
- Publication number
- JPH01106420A JPH01106420A JP26347087A JP26347087A JPH01106420A JP H01106420 A JPH01106420 A JP H01106420A JP 26347087 A JP26347087 A JP 26347087A JP 26347087 A JP26347087 A JP 26347087A JP H01106420 A JPH01106420 A JP H01106420A
- Authority
- JP
- Japan
- Prior art keywords
- cvd
- suction
- section
- flow
- side plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 3
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 abstract description 9
- 230000002950 deficient Effects 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、化学的気相析出装置（以下、ＣＶＤ装置と
略称する）に関し、とくに、常圧ＣＶＤ装置の試料物体
吸着手段の改良に係るものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a chemical vapor deposition apparatus (hereinafter abbreviated as a CVD apparatus), and particularly relates to an improvement in a means for adsorbing a sample object in an atmospheric pressure CVD apparatus. be.
従来の技術
従来の常圧ＣＶＤ装置は、たとえば、第３図の要部断面
図で概要が示されるように、ウェハ１がトレー２に乗せ
られて、ＣＶＤヘッド部３の直下に送られて来たとき、
同ヘッド部３から導入されたＣＶＤ用反応ガスにより、
パウェハｌの表面上に所望のＣＶＤ膜が形成される。こ
のとき、ウェハ■は、トレー２を通じて、下部のヒータ
４により、ＣＶＤ用反応ガスを分解して、析出物を生成
するに十分な温度状態に加熱される。そして、ＣＶＤ膜
の生成されたウェハ１は、トレー２によって移動されＣ
ＶＤヘッド３から離れた位置で、吸着用チャック部５に
よって吸着保持されて、同トレー２から取り上げられる
。2. Description of the Related Art In a conventional atmospheric pressure CVD apparatus, for example, a wafer 1 is placed on a tray 2 and sent directly below a CVD head section 3, as schematically shown in the cross-sectional view of main parts in FIG. When
Due to the CVD reaction gas introduced from the head section 3,
A desired CVD film is formed on the surface of the wafer l. At this time, the wafer (1) is heated through the tray 2 by the lower heater 4 to a temperature sufficient to decompose the CVD reaction gas and generate precipitates. Then, the wafer 1 on which the CVD film has been formed is moved by the tray 2 and
At a position away from the VD head 3, it is held by suction by the suction chuck section 5 and taken up from the tray 2.
発明が解決しようとする問題点
上述の従来例ＣＶＤ装置における吸着用チャック部５に
は、ベルヌーイチャックと通称される吸着手段が利用さ
れる。これは、周辺に噴出されるガス流によって生じる
内部真空圧（減圧）によって試料物体を吸着するもので
あるから、吸着手段が所定の試料物体の直上に位置する
とき、その周辺部に向かって、ガス流、たとえば、不活
性ガスの噴流が起こる。ところが、この従来例装置によ
ると、吸着手段の作動状態のときに試料物体周辺に噴出
される不活性ガスが、ＣＶＤヘッド部３の近傍に達する
と、ＣＶＤ用反応ガスの気流を乱して、その反応を不均
一にしたり、あるいは、同ヘッド部３の周囲に析出した
固形物、いわゆる、フレークが被成長ウェハ１上に落下
して、同表面のＣＶＤ膜を損うという問題が起る。Problems to be Solved by the Invention For the suction chuck section 5 in the conventional CVD apparatus described above, a suction means commonly known as a Bernoulli chuck is used. This is because the sample object is adsorbed by the internal vacuum pressure (reduced pressure) generated by the gas flow ejected to the surrounding area, so when the adsorption means is located directly above a predetermined sample object, toward the periphery of the sample object, A gas flow occurs, for example a jet of inert gas. However, according to this conventional device, when the inert gas ejected around the sample object when the adsorption means is in operation reaches the vicinity of the CVD head section 3, it disturbs the airflow of the CVD reaction gas. Problems arise in that the reaction becomes non-uniform, or solid matter, so-called flakes, deposited around the head section 3 fall onto the wafer 1 to be grown, damaging the CVD film on the surface.
この発明の目的は、かかる吸着用チャック部に起因する
ＣＶＤ膜の不良発生を排除することにある。An object of the present invention is to eliminate the occurrence of defects in CVD films caused by such suction chuck portions.
問題点を解決するための手段
この発明は、試料物体を吸着保持するための吸着用チャ
ック部の近傍に、同吸着用チャック部端から噴出される
不活性ガスの流向を変える側板を配設した構成のＣＶＤ
装置である。Means for Solving the Problems The present invention provides a side plate that changes the flow direction of the inert gas ejected from the end of the suction chuck, in the vicinity of the suction chuck for holding the sample object by suction. CVD of configuration
It is a device.
作用
この発明によると、吸着用チャック部の近傍に配された
側板によって、同吸着用チャック部から噴出される不活
性ガスがＣＶＤヘッド部に流れ込むのを防ぎ、同ＣＶＤ
ヘッド部の反応ガス流の乱れを起こすことがな（なり、
また、同ヘッド部からのフレークの落下をも減少させる
ことができる。According to this invention, the side plate disposed near the suction chuck part prevents inert gas ejected from the suction chuck part from flowing into the CVD head part.
It does not cause turbulence in the reactant gas flow in the head.
Furthermore, falling of flakes from the head portion can also be reduced.
実施例 つぎに、この発明を実施例によって詳しくのべる。Example Next, this invention will be described in detail by way of examples.
第１図は、この発明の実施例ＣＶＤ装置の要部断面図で
あり、ウェハ１．トレー２．ＣＶＤヘッド部３．ヒータ
４および吸着用チャック部５の各構造要素は、本質的に
従来例装置と同じであるが、その吸着用チャック部５の
近傍に、側板６を配設したものである。この側板６は吸
着用チャック部５の先端、すなわち、その吸着口から噴
出される不活性ガスの流れを上向きに変更し、ＣＶＤヘ
ッド部３の側に流れ込まないように、これを防ぐ役割を
担うものである。第２図は、その吸着用チャック部５と
側板６との配設状況を拡大して示す断面図である。FIG. 1 is a sectional view of a main part of a CVD apparatus according to an embodiment of the present invention, in which a wafer 1. Tray 2. CVD head section 3. The structural elements of the heater 4 and the suction chuck section 5 are essentially the same as those of the conventional device, except that a side plate 6 is disposed near the suction chuck section 5. This side plate 6 plays the role of changing the flow of inert gas ejected from the tip of the suction chuck part 5, that is, the suction port, upward and preventing it from flowing into the side of the CVD head part 3. It is something. FIG. 2 is an enlarged cross-sectional view showing how the suction chuck part 5 and the side plate 6 are arranged.
なお、この側板６の形状は、吸着用チャック部５から噴
出される不活性ガスの流れが、ＣＶＤヘッド部３の周辺
のＣＶＤ用反応ガスならびにその反応ずみの残りのガス
の流れに影響を与えないように選定される要件が満たき
れておればよく、好ましくは、同放出ガスが吸着口を出
て直ちに上方に向かうように、折り曲げられていると良
い。The shape of the side plate 6 is such that the flow of inert gas ejected from the adsorption chuck section 5 affects the flow of the CVD reaction gas around the CVD head section 3 and the remaining gas after the reaction. It is sufficient that the selected requirements such that the gas is not present are satisfied, and it is preferable that the gas is bent so that the released gas immediately heads upward after exiting the suction port.
また、この側板６の設置場所は、予め、ウエノ１１の移
動経路、したがって、トレー２の通路が定まっておれば
、ＣＶＤ装置の所定位置に固定設置されるとよいが、そ
れが可変のものでは、吸着用チャック部５の支持構体の
一部に装着され、同吸着用チャック部５と共に移動する
構造物としてもよい。In addition, if the moving path of the wafer 11 and therefore the path of the tray 2 are determined in advance, the side plate 6 may be fixedly installed at a predetermined position of the CVD apparatus, but if it is not variable. , it may be a structure that is attached to a part of the support structure of the suction chuck section 5 and moves together with the suction chuck section 5.
発明の効果
この発明によれば、吸着用チャック部の近傍に配設され
た側板により、同吸着用チャ・ツタ部から噴出される不
活性ガスがＣＶＤヘッド部に流れ込んで、そのＣＶＤ反
応の均一性を乱すことがないとともに、同ヘッド部周辺
のガス流の乱れによって起り易いとされるフレークの落
下によるＣＶＤ膜の品質低下も起らない。Effects of the Invention According to the present invention, the side plate disposed near the suction chuck portion allows the inert gas ejected from the suction chuck portion to flow into the CVD head portion, thereby making the CVD reaction uniform. In addition, the quality of the CVD film does not deteriorate due to falling flakes, which is said to be likely to occur due to turbulence in the gas flow around the head.
第１図はこの発明の実施例装置の要部断面図、第２図は
その一部拡大図、第３図は従来例装置の要部断面図であ
る。
１・・・・・・ウェハ、２・・・・・・トレー、３・・
・・・・ＣＶＤヘッド部、５・・・・・・吸着用チャッ
ク部、６・・・・・・側板。FIG. 1 is a sectional view of a main part of an apparatus according to an embodiment of the present invention, FIG. 2 is a partially enlarged view thereof, and FIG. 3 is a sectional view of a main part of a conventional apparatus. 1...Wafer, 2...Tray, 3...
...CVD head part, 5...Adsorption chuck part, 6...Side plate.
Claims (1)
傍に、同吸着用チャック部端から噴出される不活性ガス
の流向を変える側板を配設したことを特徴とする化学的
気相析出装置。A chemical vapor deposition apparatus characterized in that a side plate for changing the flow direction of an inert gas ejected from an end of the adsorption chuck part is disposed near an adsorption chuck part for adsorbing and holding a sample object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26347087A JPH01106420A (en) | 1987-10-19 | 1987-10-19 | Chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26347087A JPH01106420A (en) | 1987-10-19 | 1987-10-19 | Chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01106420A true JPH01106420A (en) | 1989-04-24 |
Family
ID=17389955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26347087A Pending JPH01106420A (en) | 1987-10-19 | 1987-10-19 | Chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01106420A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975214A (en) * | 1986-05-28 | 1990-12-04 | Canon Kabushiki Kaisha | Magnetic iron oxide containing silicon element and process for producing same |
-
1987
- 1987-10-19 JP JP26347087A patent/JPH01106420A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975214A (en) * | 1986-05-28 | 1990-12-04 | Canon Kabushiki Kaisha | Magnetic iron oxide containing silicon element and process for producing same |
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