JPH01105788A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH01105788A JPH01105788A JP63137073A JP13707388A JPH01105788A JP H01105788 A JPH01105788 A JP H01105788A JP 63137073 A JP63137073 A JP 63137073A JP 13707388 A JP13707388 A JP 13707388A JP H01105788 A JPH01105788 A JP H01105788A
- Authority
- JP
- Japan
- Prior art keywords
- atom
- weight
- parts
- substituted
- hydrocarbon group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 18
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical class N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052751 metal Chemical group 0.000 claims abstract description 11
- 239000002184 metal Chemical group 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 7
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 6
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims abstract description 6
- 125000004429 atom Chemical group 0.000 claims abstract description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 6
- 125000005843 halogen group Chemical group 0.000 claims abstract description 4
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 3
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 3
- 125000004434 sulfur atom Chemical group 0.000 claims abstract description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 26
- -1 naphthalocyanine compound Chemical class 0.000 description 22
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000003786 synthesis reaction Methods 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- JHKWXZZEBNEOAE-UHFFFAOYSA-N dihydroxysilicon Chemical compound O[Si]O JHKWXZZEBNEOAE-UHFFFAOYSA-N 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229920005668 polycarbonate resin Polymers 0.000 description 5
- 239000004431 polycarbonate resin Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- IVUBJNPDPBDVLT-UHFFFAOYSA-N 2,15,28,41,53,55-hexaza-54,56-diazanidatridecacyclo[40.10.1.13,14.116,27.129,40.04,13.06,11.017,26.019,24.030,39.032,37.043,52.045,50]hexapentaconta-1,3,5,7,9,11,13,15,17,19,21,23,25,27(55),28,30,32,34,36,38,40,42(53),43,45,47,49,51-heptacosaene oxovanadium(2+) Chemical compound [V+2]=O.[N-]1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)[N-]3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 IVUBJNPDPBDVLT-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- MJVASWARXKAZOC-UHFFFAOYSA-N bis(trihexylsilyloxy)silicon Chemical compound CCCCCC[Si](CCCCCC)(CCCCCC)O[Si]O[Si](CCCCCC)(CCCCCC)CCCCCC MJVASWARXKAZOC-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- PPFRFGILXGPJDE-UHFFFAOYSA-N 6-hexylsulfanylnaphthalene-2,3-dicarbonitrile Chemical compound C1=C(C#N)C(C#N)=CC2=CC(SCCCCCC)=CC=C21 PPFRFGILXGPJDE-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910021551 Vanadium(III) chloride Inorganic materials 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- HQYCOEXWFMFWLR-UHFFFAOYSA-K vanadium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[V+3] HQYCOEXWFMFWLR-UHFFFAOYSA-K 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 241000234435 Lilium Species 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical class C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- QUSIXTNHZHDRQZ-UHFFFAOYSA-N bis(trimethylsilyloxy)silicon Chemical compound C[Si](C)(C)O[Si]O[Si](C)(C)C QUSIXTNHZHDRQZ-UHFFFAOYSA-N 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 125000004987 dibenzofuryl group Chemical group C1(=CC=CC=2OC3=C(C21)C=CC=C3)* 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- KNBYJRSSFXTESR-UHFFFAOYSA-N naphthalene-2,3-dicarbonitrile Chemical group C1=CC=C2C=C(C#N)C(C#N)=CC2=C1 KNBYJRSSFXTESR-UHFFFAOYSA-N 0.000 description 1
- 125000005486 naphthalic acid group Chemical group 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- NOVLNRUYLAGEMC-UHFFFAOYSA-N trihexyl(hydroxy)silane Chemical compound CCCCCC[Si](O)(CCCCCC)CCCCCC NOVLNRUYLAGEMC-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
- G11B7/248—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes porphines; azaporphines, e.g. phthalocyanines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2532—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising metals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2535—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polyesters, e.g. PET, PETG or PEN
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2539—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins biodegradable polymers, e.g. cellulose
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
本発明は、レーザー光線によって情報を書き込んだり、
読取ったりすることが可能な光学記録媒体に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention provides a method for writing information using a laser beam,
The present invention relates to optical recording media that can be read and read.
(従来の技術)
レーザー光線を用いて情報を記録する媒体には種々のも
のがあるが、その一つにレーザー光線を基板上の記録層
に照射することによって、照射部分を局部的に加熱し、
融解、蒸発または分解などの物理的変化をおこさせ情報
を記録するものがある。(Prior Art) There are various types of media that record information using laser beams. One of them is to irradiate a recording layer on a substrate with a laser beam to locally heat the irradiated area.
Some materials record information by causing physical changes such as melting, evaporation, or decomposition.
これまで基板上の記録層として、As、Te、Se、T
iなどの金属や合金の薄膜層が使用されてきた。このよ
うな記録層を有する光学記録媒体は、−般に、比較的書
き込み感度が高く、また、記録再生の光学系が小型にで
きる半導体レーザーにも適用することができるが、熱伝
導率が大きい2反射率が小さいなどの理由により、記録
時にレーザー光線のエネルギーを効率よく利用できず、
高速走査で記録するには大出力のレーザー光線が必要と
なる場合があった。また、これらの記録層は化学的に不
安定であり、空気中で劣化することがあった。Until now, As, Te, Se, T
Thin film layers of metals and alloys such as i have been used. Optical recording media having such a recording layer generally have relatively high writing sensitivity and can be applied to semiconductor lasers, which allow the optical system for recording and reproduction to be made compact; however, they have high thermal conductivity. 2. Due to reasons such as low reflectance, the energy of the laser beam cannot be used efficiently during recording,
High-speed scanning sometimes requires a high-power laser beam. Furthermore, these recording layers were chemically unstable and could deteriorate in the air.
このような理由から、近年、比較的長波長(例えば78
0nm以上)のレーザー光線を用いて、基板上の有機薄
膜層に情報を書き込んだり読み取ったりする光学記録媒
体の研究がなされている。For this reason, in recent years relatively long wavelengths (for example 78
Research has been carried out on optical recording media in which information is written to and read from an organic thin film layer on a substrate using a laser beam with a diameter of 0 nm or more.
このような有機薄膜層は、半導体レーザーを用いて融解
、蒸発または分解などによって容易に小さな凹部(ピッ
ト)を形成できる利点を持っている。Such an organic thin film layer has the advantage that small recesses (pits) can be easily formed by melting, evaporating, or decomposing using a semiconductor laser.
有機薄膜層を基板の上に形成させ、レーザー光線を用い
て情報を記録、再生する光学記録媒体としては、特開昭
57−82093号公報、特開昭58−56892号公
報、特開昭60−89842号公報。Optical recording media in which an organic thin film layer is formed on a substrate and information is recorded and reproduced using laser beams are disclosed in JP-A-57-82093, JP-A-58-56892, and JP-A-60- Publication No. 89842.
特開昭60−150243号公報などに記載のものが知
られている。しかしながら、半導体レーザー光線に対し
て吸収係数が大きい、記録感度の高い、光学記録媒体と
して完全に満足できるものは開発されていないのが実情
である。The one described in Japanese Patent Application Laid-open No. 150243/1983 is known. However, the reality is that a completely satisfactory optical recording medium that has a large absorption coefficient for semiconductor laser beams and high recording sensitivity has not been developed.
(発明が解決しようとする課題)
本発明者らは、基板上に特定のナフタロシアニン系化合
物を含有する記録層を有する光学記録媒体が種々の優れ
た特性を有することを見出し1本発明を完成したもので
1本発明は、化学的、物理的に安定で、レーザー光線で
高感度で記録再生できる。安価な特定のナフタロシアニ
ン系化合物を用いた光学記録媒体を提供するものである
。(Problems to be Solved by the Invention) The present inventors discovered that an optical recording medium having a recording layer containing a specific naphthalocyanine compound on a substrate had various excellent properties, and completed the present invention. The present invention is chemically and physically stable, and can be recorded and reproduced with high sensitivity using a laser beam. An object of the present invention is to provide an optical recording medium using an inexpensive specific naphthalocyanine compound.
(課題を解決するための手段)
本発明は、基板上に下記一般式(1)で示されるナフタ
ロシアニン系化合物の少なくとも1種または2種以上を
含有する有機薄膜層を記録層として有することを特徴と
する光学記録媒体である。(Means for Solving the Problems) The present invention includes, as a recording layer, an organic thin film layer containing at least one or two or more naphthalocyanine compounds represented by the following general formula (1) on a substrate. This is a characteristic optical recording medium.
〔式中、X:イオウ原子、セレン原子またはテルルル原
子を表わす。[In the formula, X represents a sulfur atom, a selenium atom, or a tellurium atom.
A:置換もしくは未置換の脂肪族炭化水素基。A: Substituted or unsubstituted aliphatic hydrocarbon group.
置換もしくは未置換の芳香族炭化水素基または置換もし
くは未置換の芳香族複素環基を表わす。Represents a substituted or unsubstituted aromatic hydrocarbon group or a substituted or unsubstituted aromatic heterocyclic group.
M:水素原子、ハロゲン原子もしくは酸素原子を有して
もよい金属原子、または
(OR+)p 、 (OS i R2Rs Ra)q
。M: a hydrogen atom, a metal atom that may have a halogen atom or an oxygen atom, or (OR+)p, (OS i R2Rs Ra)q
.
(OS i Rt R5C0Rt))−を有してもよい
金属原子を表わす。ここで、RI、R2゜R’l、R4
は、それぞれ独立に、水素原子。(OS i Rt R5C0Rt)) represents a metal atom that may have -. Here, RI, R2゜R'l, R4
are each independently a hydrogen atom.
置換もしくは未置換の脂肪族炭化水素基。Substituted or unsubstituted aliphatic hydrocarbon group.
置換もしくは未置換の芳香族炭化水素基。Substituted or unsubstituted aromatic hydrocarbon group.
または置換もしくは未置換の芳香族複素環基を表わし、
p、qは0ないし2の整数を表わす。or represents a substituted or unsubstituted aromatic heterocyclic group,
p and q represent integers from 0 to 2.
k、l、mおよびn:それぞれ独立にOないし4の整数
を表わすが、全部が同時にOになることはない。〕
つぎに上記一般式〔I〕で表される化合物の置換基につ
いて説明すると、Aは、置換もしくは未置換の脂肪族炭
化水素基、置換もしくは未置換の芳香族炭化水素基、ま
たは置換もしくは未置換の芳香族複素環基を表わし1例
えば、フェニル基、ナフチル基。k, l, m, and n: Each independently represents an integer from O to 4, but not all of them are O at the same time. ] Next, to explain the substituents of the compound represented by the above general formula [I], A is a substituted or unsubstituted aliphatic hydrocarbon group, a substituted or unsubstituted aromatic hydrocarbon group, or a substituted or unsubstituted aromatic hydrocarbon group. Represents a substituted aromatic heterocyclic group, eg, phenyl group, naphthyl group.
アントニル基、メチル基、エチル基、プロピル基。anthonyl group, methyl group, ethyl group, propyl group.
ペンチル基、ヘキシル基、オクチル基、ステアリル基、
ピリジル基、カルバゾリル基、ジベンゾフリル基、ベン
ゾチアゾリル基などであるが、これらの置換基に限られ
るものではない。また、これらの基は。pentyl group, hexyl group, octyl group, stearyl group,
Substituents include, but are not limited to, a pyridyl group, a carbazolyl group, a dibenzofuryl group, and a benzothiazolyl group. Also, these groups.
水酸基、アルキル基、ハロゲン原子、アミノ基、ジアル
キルアミノ基、アルコキシ基、ニトロ基、シアノ基、ア
ラルキル基、アリール基などの置換基を有してもよいが
、これらの置換基に限定されるものではない。It may have substituents such as hydroxyl group, alkyl group, halogen atom, amino group, dialkylamino group, alkoxy group, nitro group, cyano group, aralkyl group, aryl group, but is limited to these substituents. isn't it.
Mは、H,Na、Li、Cu、Fe、Co、Ni。M is H, Na, Li, Cu, Fe, Co, Ni.
Zn、 Mn、pb、 Si、Ge、Mg、Al−C
l。Zn, Mn, pb, Si, Ge, Mg, Al-C
l.
In−Cl、Ti=O,V=O,あるいは。In-Cl, Ti=O, V=O, or.
−(OR+)p + (OS t Rz Rx R
a ) q 、または(OS i Rz R3(ORi
)) qを有してもよい金属原子を表わす。ここで、R
i 、Rz 、R3、R4は。−(OR+)p + (OS t Rz Rx R
a) q, or (OS i Rz R3(ORi
)) Represents a metal atom that may have q. Here, R
i, Rz, R3, and R4.
それぞれ独立に、水素原子または一般式(1)における
Aと同じ意味を表わし、p、qはOないし2の整数を表
わす。 k、1.mおよびnは、それぞれ独立にOない
し4の整数を表わすが、全部が同時に0になることはな
く、好ましくは工ないし2の整数である。Each independently represents a hydrogen atom or the same meaning as A in general formula (1), and p and q represent an integer from O to 2. k, 1. m and n each independently represent an integer from 0 to 4, but not all of them are 0 at the same time, and are preferably an integer from 0 to 2.
上記一般式〔I〕で表わされるナフタロシアニン系化合
物は、可視領域から近赤外領域に大きな吸収を有し、レ
ーザー光線による記録再生に好適である。The naphthalocyanine compound represented by the above general formula [I] has large absorption in the visible to near-infrared region, and is suitable for recording and reproducing using a laser beam.
本発明で使用する上記一般式(1)で表わされるナフタ
ロシアニン系化合物は、一般には、下記一般式(II)
で示されるニトリル類1種以上と各種金属塩(無金属ナ
フタロシアニンを製造する場合には使用しない)とを好
ましくは有機溶媒中で加熱することにより製造すること
ができる。The naphthalocyanine compound represented by the above general formula (1) used in the present invention is generally represented by the following general formula (II).
It can be produced by heating one or more nitriles represented by and various metal salts (not used when producing metal-free naphthalocyanine), preferably in an organic solvent.
(式中、XおよびAは一般式CI)における意味と同様
の意味を表わし、 k、 It、 mおよびnはO
から4の整数を表わす、)
また、一般式(n)で示される置換基の異なるニトリル
類を混合して反応させることによって種々のナフタロシ
アニン系化合物を得ることもできる。また一般式(1)
で表わされるナフタロシアニン系化合物は、ナフタル酸
類(一般式(nI) ) 、ナフタルイミド類(一般式
〔■〕)を出発原料としても製造することができる。(wherein, X and A represent the same meanings as in general formula CI), k, It, m and n are O
represents an integer from 4 to 4) Furthermore, various naphthalocyanine compounds can be obtained by mixing and reacting nitriles having different substituents represented by the general formula (n). Also, general formula (1)
The naphthalocyanine compounds represented by can also be produced using naphthalic acids (general formula (nI)) and naphthalimides (general formula [■]) as starting materials.
一般式(III) 0
(式中、XおよびAは一般式(1)における意味と同様
の意味を表わし、 k、 It、 mおよびnは0
から4の整数を表わす、)
これらのナフタロシアニン系化合物の製造には。General formula (III) 0 (wherein, X and A represent the same meanings as in general formula (1), and k, It, m and n are 0
(representing an integer from 4 to 4) for the production of these naphthalocyanine compounds.
アルコール類、グリコール類、キシレン、キノリン。Alcohols, glycols, xylene, quinoline.
α−クロルナフタレン、ニトロベンゼン、スルホラン、
N、N−ジメチルホルムアミドなどの一般の有機溶媒を
広く使用することができるが無溶媒でも得られる。α-Chlornaphthalene, nitrobenzene, sulfolane,
Common organic solvents such as N,N-dimethylformamide can be widely used, but it can also be obtained without a solvent.
また、触媒としてアルカリやジアザビシクロウンデセン
、シクロヘキシルアミンなどの有機アミンを使用した方
が好ましい場合がある。Further, it may be preferable to use an alkali or an organic amine such as diazabicycloundecene or cyclohexylamine as a catalyst.
また、原料となる金属塩は2種々の金属塩が使用できる
。Moreover, two kinds of metal salts can be used as the raw material metal salts.
本発明で使用する一般式〔I〕で表わされるナフタロシ
アニン系化合物の代表例をさらに具体的にあげると、ジ
ーエチルチオ銅ナフタロシアニン、トリーブチルチオバ
ナジルナフタロシアニン、テトラ−n−ペンチルチオ銅
ナフタロシアニン、テトラ−n−へキシルチオバナジル
ナフタロシアニン、テトラ−n−へキシルチオチタニル
ナフタロシアニン、テトラ−n−オクチルチオ亜鉛ナフ
タロシアニン、テトラ−n−ステアリルチオ−バナジル
ナフタロシアニン、テトラ(2−エチルへキシルチオ)
鉛ナフタロシアニン、ヘキサ−n−プロピルチオ銅ナフ
タロシアニン、ヘキサ−n−ブチルチオマンガンナフタ
ロシアニン、オクタエチルチオ銅ナフタロシアニン、オ
クタ−n−ブチルチオ−アルミニウムクロルナフタロシ
アニン、テトラフェニルチオ無金属ナフタロシアニン、
テトラフェニルチオ銅ナフクロシアニン、テトラフエニ
チオバナジルナフタロシアニン。More specific representative examples of the naphthalocyanine compounds represented by the general formula [I] used in the present invention include di-ethylthiocopper naphthalocyanine, tributylthiovanadylnaphthalocyanine, tetra-n-pentylthiocopper naphthalocyanine, and tetra-n-pentylthiocopper naphthalocyanine. -n-hexylthiovanadylnaphthalocyanine, tetra-n-hexylthiotitanylnaphthalocyanine, tetra-n-octylthiozinc naphthalocyanine, tetra-n-stearylthio-vanadylnaphthalocyanine, tetra(2-ethylhexylthio)
Lead naphthalocyanine, hexa-n-propylthiocopper naphthalocyanine, hexa-n-butylthiomanganese naphthalocyanine, octaethylthiocopper naphthalocyanine, octa-n-butylthio-aluminum chlornaphthalocyanine, tetraphenylthio metal-free naphthalocyanine,
Tetraphenylthiocopper naphculocyanine, tetraphenythiovanadylnaphthalocyanine.
テトラフェニルチオチタニルナフタロシアニン、テトラ
フヱニルセレノ銅ナフタロシアニン、テトラ(2−クロ
ルフェニルチオ)銅ナフタロシアニン。Tetraphenylthiotitanylnaphthalocyanine, tetraphenylselenocopper naphthalocyanine, tetra(2-chlorophenylthio)copper naphthalocyanine.
テトラ(2,4−ジメチルフェニルチオ)バナジルナフ
タロシアニン、テトラ(3−メトキシフェニルチオ)チ
タニルナフタロシアニン、オクタフェニルチオニッケル
ナフタロシアニン、オクタ(2−メチルフェニルチオ)
銅ナフタロシアニン、テトラ(2−メトキシエチルチオ
)銅ナフタロシアニン、テトラ(2−メトキシエチルチ
オ)チタニルナフタロシアニン、ジヒドロキシケイ素テ
トラフェニルチオナフタロシアニン、ビス〔トリメチル
シロキシ〕ケイ素テトラフェニルチオナフタロシアニン
、ジヘキシルオキシケイ素テトラエチルチオナフタロシ
アニン。Tetra(2,4-dimethylphenylthio)vanadylnaphthalocyanine, Tetra(3-methoxyphenylthio)titanylnaphthalocyanine, Octaphenylthionicelnaphthalocyanine, Octa(2-methylphenylthio)
Copper naphthalocyanine, tetra(2-methoxyethylthio)copper naphthalocyanine, tetra(2-methoxyethylthio)titanylnaphthalocyanine, dihydroxysilicon tetraphenylthionapthalocyanine, bis[trimethylsiloxy]silicon tetraphenylthionapthalocyanine, dihexyloxysilicon tetraethyl Thionaphthalocyanine.
ビス〔ブトキシトリエチレンオキシジメチルシロキシ〕
ケイ素テトラヘキシルチオナフタロシアニン。Bis[butoxytriethyleneoxydimethylsiloxy]
Silicon tetrahexylthionapthalocyanine.
ビス〔ヒドロキシエチルオキシジエチルシロキシ〕ケイ
素テトラフェニルチオナフタロシアニンなどである。こ
れらのナフタロシアニン系化合物に、他の色素を混合分
散あるいは混合溶解して用いることもできる。Bis[hydroxyethyloxydiethylsiloxy]silicon tetraphenylthionaphthalocyanine and the like. Other dyes can also be used by mixing and dispersing or mixing and dissolving these naphthalocyanine compounds.
本発明において、記録層が設けられる基板材料としては
、ガラス、プラスチック、紙、金属板など種々の材料が
ある。プラスチックとしては、塩化ビニル系樹脂、アク
リル樹脂、ポリエステル樹脂、ポリエチレン樹脂、ポリ
アミド樹脂、ポリカーボネート樹脂、エポキシ樹脂、メ
タクリル樹脂、酢酸ビニル系樹脂、ニトロセルロース、
ポリプロピレン樹脂。In the present invention, the substrate material on which the recording layer is provided includes various materials such as glass, plastic, paper, and metal plates. Plastics include vinyl chloride resin, acrylic resin, polyester resin, polyethylene resin, polyamide resin, polycarbonate resin, epoxy resin, methacrylic resin, vinyl acetate resin, nitrocellulose,
Polypropylene resin.
ポリエチレンテレフタレート樹脂、フェノール樹脂など
があげられる。Examples include polyethylene terephthalate resin and phenol resin.
本発明において、一般式〔I〕で表わされるナタロシア
ニン系化合物を含有する記録層を基板上に形成する方法
としては、真空蒸着法、スパッタリング法、イオンプレ
ート法、キャスト法、スピナー法。In the present invention, methods for forming the recording layer containing the natalocyanine compound represented by general formula [I] on the substrate include vacuum evaporation method, sputtering method, ion plate method, casting method, and spinner method.
スプレーコート法、ブレードコーチインク法、LB法な
どの化学的2機械的方法があるが、スピナー法が最も好
ましい。スピナー法で塗工する場合には。There are chemical and mechanical methods such as the spray coating method, the blade coach ink method, and the LB method, but the spinner method is the most preferred. When coating using the spinner method.
フタロシアニン系化合物をアルコール類、ケトン類、ア
ミド類、スルホキシド類、エーテル類、エステル類、脂
肪族ハロゲン化炭化水素類、芳香族炭化水素類等の一般
の有機溶媒に分散または溶解して塗布する。このとき、
必要に応じて、高分子バインダーを加えてもよい。高分
子/slイングーとして番よ、上言己基板材料に使用す
るようなプラスチック類をイ吏用することができる。A phthalocyanine compound is dispersed or dissolved in a common organic solvent such as alcohols, ketones, amides, sulfoxides, ethers, esters, aliphatic halogenated hydrocarbons, aromatic hydrocarbons, etc. and applied. At this time,
A polymer binder may be added if necessary. As a polymer/sl material, plastics such as those used for the substrate material can be used.
基板上に形成するナフタロシアニン系化合物を含む記録
層の厚さは、10μm以下、好ましく番ま500人〜2
μm以下である。塗布した後、り、ロロホルム、テトラ
ヒドロフラン、トルエンなどの有機溶媒の蒸気にさらす
ことによって、薄膜の吸収波長を長波長にシフトして、
レーザー光に対する感度を著しく向上することができる
場合もある。The thickness of the recording layer containing the naphthalocyanine compound formed on the substrate is 10 μm or less, preferably 500 μm to 2 μm.
It is less than μm. After application, the absorption wavelength of the thin film is shifted to longer wavelengths by exposing it to vapors of organic solvents such as lily, loloform, tetrahydrofuran, and toluene.
In some cases, sensitivity to laser light can be significantly improved.
また、これらの記録層を保護するために、 Al□0.
。In addition, in order to protect these recording layers, Al□0.
.
SiO,、SiO,SnOなどの無機化合物を蒸着して
保8隻層としてもよい。保護層として、基板材料に用し
)るようなポリマー類を塗布してもよし)。An inorganic compound such as SiO, SiO, SnO, etc. may be deposited to form a protective layer. As a protective layer, it is also possible to apply a polymer similar to that used for substrate materials).
本発明の光学記録媒体は、)le−Neレーザー光線は
もちろん、ルビー、 Ar、半導体レーザー光線など等
の各種レーザー光線によって書込み、読み出しの記録再
生ができる。The optical recording medium of the present invention can be written and read using various laser beams such as a) le-Ne laser beam as well as ruby, Ar, and semiconductor laser beams.
(実施例) 本発明を実施例によりさらに具体的に説明する力(。(Example) The present invention will be explained more specifically by examples.
本発明は以下の実施例に限定されるもので番よなし)。The present invention is limited to the following examples and is not limitative.)
なお9例中9%は重量%である。Note that 9% of the 9 examples is % by weight.
合成例1 テトラ−〇−へキシルチオバナジルナフタロ
シアニンの合成
n−アミルアルコール30重量部に、 6− (n
−ヘキシルチオ)−2,3−ジシアノナフタレン2.9
重量部、三塩化バナジウム0.5重量部、およびジアザ
ビシクロウンデセン(DBU)2.0重量部を加え。Synthesis Example 1 Synthesis of tetra-〇-hexylthiovanadylnaphthalocyanine To 30 parts by weight of n-amyl alcohol, 6-(n
-hexylthio)-2,3-dicyanonaphthalene 2.9
parts by weight, 0.5 parts by weight of vanadium trichloride, and 2.0 parts by weight of diazabicycloundecene (DBU).
5時間還流させた後、メタノール300重量部で希釈し
、生成物をろ別し、メタノールで洗浄後、1%塩酸、1
%水酸化ナトリウム水溶液で洗浄、水洗。After refluxing for 5 hours, it was diluted with 300 parts by weight of methanol, the product was filtered, washed with methanol, and then diluted with 1% hydrochloric acid and 1% hydrochloric acid.
% sodium hydroxide aqueous solution and water.
乾燥して、テトラn−へキシルチオバナジルナフタロシ
アニン2.0重量部を得た。After drying, 2.0 parts by weight of tetra-n-hexylthiovanadylnaphthalocyanine was obtained.
合成例2 テトラフェニルチオチタニルナフタロシアニ
ンの合成
ニトロベンゼン35重量部に、6−フェニルチオ−2,
3−ジシアノナフタレン2.9重量部および四塩化チタ
ン2.5重量部を加え、180〜200℃で8時間加熱
攪拌した後、メタノール500重量部で希釈し、生成物
をろ別し、メタノールで洗浄後、1%塩酸、1%水酸化
ナトリウム水溶液で洗浄、水洗。Synthesis Example 2 Synthesis of tetraphenylthiotitanylnaphthalocyanine To 35 parts by weight of nitrobenzene, 6-phenylthio-2,
2.9 parts by weight of 3-dicyanonaphthalene and 2.5 parts by weight of titanium tetrachloride were added, heated and stirred at 180 to 200°C for 8 hours, diluted with 500 parts by weight of methanol, and the product was filtered and diluted with methanol. After washing, wash with 1% hydrochloric acid and 1% sodium hydroxide aqueous solution, and then wash with water.
乾燥して、テトラフェニルチオチタニルナフタロシアニ
ン1.8重量部を得た。After drying, 1.8 parts by weight of tetraphenylthiotitanylnaphthalocyanine was obtained.
合成例3 テトラ(2−クロルフェニルチオ)銅ナフタ
ロシアニンの合成
キノリン30重量部に、6−(2−クロルフェニルチオ
)−2,3−ジシアノナフタレン3.2重量部および塩
化第一銅1.0重量部を加え、160〜170℃で5時
間加熱攪拌した後、メタノール500重量部で希釈し、
生成物をろ別し、メタノールで洗浄後、1%塩酸、1%
水酸化ナトリウム水溶液で洗浄。Synthesis Example 3 Synthesis of tetra(2-chlorophenylthio)copper naphthalocyanine To 30 parts by weight of quinoline, 3.2 parts by weight of 6-(2-chlorophenylthio)-2,3-dicyanonaphthalene and 1.5 parts by weight of cuprous chloride. After adding 0 parts by weight and heating and stirring at 160 to 170°C for 5 hours, diluted with 500 parts by weight of methanol,
The product was filtered, washed with methanol, and then washed with 1% hydrochloric acid and 1%
Wash with aqueous sodium hydroxide solution.
水洗し、乾燥して、テトラ(2−クロルフェニルチオ)
銅ナフタロシアニン2.6重量部を得た。Wash with water and dry, Tetra(2-chlorophenylthio)
2.6 parts by weight of copper naphthalocyanine was obtained.
合成例4 テトラ(2−メトキシエトキシエチルチオ)
バナジルナフタロシアニンの合成
n−アミルアルコール40重量部に、6−(2−メトキ
シエトキシエチルチオ)−2,3−ジシアノナフタレン
3.2重量部、三塩化バナジウム0.5重量部および、
DBU2.0重量部を加え、′4時間還流させた後、冷
却2反応液を水1.O1に注ぎ、析出した結晶をろ別、
水洗、乾燥した後、エタノールから再結晶して、テトラ
(2−メトキシエトキシエチルチオ)銅ナフタロシアニ
ン0.8重量部を得た。Synthesis Example 4 Tetra(2-methoxyethoxyethylthio)
Synthesis of vanadylnaphthalocyanine 40 parts by weight of n-amyl alcohol, 3.2 parts by weight of 6-(2-methoxyethoxyethylthio)-2,3-dicyanonaphthalene, 0.5 parts by weight of vanadium trichloride, and
After adding 2.0 parts by weight of DBU and refluxing for 4 hours, the cooled 2.0 parts by weight reaction solution was added with 1.0 parts by weight of water. Pour into O1, filter out the precipitated crystals,
After washing with water and drying, it was recrystallized from ethanol to obtain 0.8 parts by weight of tetra(2-methoxyethoxyethylthio)copper naphthalocyanine.
合成例5 ジヒドロキシケイ素テトラエチルチオナフタ
ロシアニンの合成
キノリン50重量部に、6−エチルチオ−2,3−ジシ
アノナフタレン2.4重量部および四塩化ケイ素0.5
重量部を加え、190〜200℃で4時間加熱攪拌した
後、クロロホルム300重量部で希釈し。Synthesis Example 5 Synthesis of dihydroxysilicon tetraethylthionaphthalocyanine To 50 parts by weight of quinoline, 2.4 parts by weight of 6-ethylthio-2,3-dicyanonaphthalene and 0.5 parts by weight of silicon tetrachloride.
After adding parts by weight and heating and stirring at 190 to 200°C for 4 hours, the mixture was diluted with 300 parts by weight of chloroform.
生成物をろ別し、クロロホルムで洗浄した後、減圧乾燥
して、ジクロロケイ素テトラエチルチオナフタロシアニ
ン1.2重量部を得た。得られたジクロロケイ素テトラ
エチルチオナフタロシアニン1.0重量部を3%水酸化
ナトリウム溶液300重量部に加え。The product was filtered, washed with chloroform, and then dried under reduced pressure to obtain 1.2 parts by weight of dichlorosilicon tetraethylthionaphthalocyanine. 1.0 parts by weight of the obtained dichlorosilicon tetraethylthionaphthalocyanine was added to 300 parts by weight of 3% sodium hydroxide solution.
室温で2時間撹拌後、ろ別、水洗して、ジヒドロキシケ
イ素テトラエチルチオナフタロシアニン0.8重量部を
得た。After stirring at room temperature for 2 hours, the mixture was filtered and washed with water to obtain 0.8 parts by weight of dihydroxysilicon tetraethylthionaphthalocyanine.
合成例6 ビス〔トリへキシルシロキシ〕ケイ素テトラ
フェニルチオナフタロシアニンの合成6−エチルチオ−
2,3−ジシアノナフタレン2゜4重量部を6−フエニ
チオー2,3−ジシアノナフタレン3.1重量部に代え
た以外は合成例5と同様にして、ジヒドロキシケイ素テ
トラフエニチオナフタロシアニン1.5重量部を得た。Synthesis Example 6 Synthesis of bis[trihexylsiloxy]silicon tetraphenylthionaphthalocyanine 6-ethylthio-
1.5 parts by weight of dihydroxysilicon tetraphenythionaphthalocyanine was prepared in the same manner as in Synthesis Example 5, except that 2.4 parts by weight of 2,3-dicyanonaphthalene was replaced with 3.1 parts by weight of 6-phenythio-2,3-dicyanonaphthalene. I got the department.
得られたジヒドロキシケイ素テトラフェニルチオナフタ
ロシアニン1.0重量部、およびトリへキシルシラノー
ル1.5>重t9Bをベンゼン50重量部に加え、4時
間還流させた後。1.0 parts by weight of the obtained dihydroxysilicon tetraphenylthionaphthalocyanine and 1.5 parts by weight of trihexylsilanol were added to 50 parts by weight of benzene, and the mixture was refluxed for 4 hours.
冷却、生成物をろ別し、n−ヘキサン20重量部で洗浄
すると、ビス〔トリへキシルシロキシ〕ケイ素テトラフ
ェニルチオナフタロシアニン1.2重量部を得た。After cooling, the product was filtered and washed with 20 parts by weight of n-hexane to obtain 1.2 parts by weight of bis[trihexylsiloxy]silicon tetraphenylthionaphthalocyanine.
合成例7 ビス〔ブトキシトリエチレンオキシジメチル
シロキシ〕ケイ素テトラヘキシルチオナフタロシアニン
の合成
6−エチルチオ−2,3−ジシアノナフタレン2゜4重
量部を6−へキシルチオ−2,3−ジシアノナフタレン
3.2重量部に代えた以外は合成例5と同様にして、ジ
ヒドロキシケイ素テトラヘキシルチオナフタロシアニン
1.8重量部を得た。得られたジヒドロキシケイ素テト
ラヘキシルチオナフタロシアニン1.0重量部、ジクロ
ロジメチルシラン8重量部、およびトリーn−ブチルア
ミン20重量部を乾燥したピリジン50重量部に加え、
室温で18時間攪拌し。Synthesis Example 7 Synthesis of bis[butoxytriethyleneoxydimethylsiloxy]silicon tetrahexylthionapthalocyanine 2.4 parts by weight of 6-ethylthio-2,3-dicyanonaphthalene was mixed with 3.2 parts by weight of 6-hexylthio-2,3-dicyanonaphthalene. 1.8 parts by weight of dihydroxysilicon tetrahexylthionapthalocyanine was obtained in the same manner as in Synthesis Example 5 except that the amount was changed to 1.8 parts by weight. 1.0 parts by weight of the obtained dihydroxysilicon tetrahexylthionapthalocyanine, 8 parts by weight of dichlorodimethylsilane, and 20 parts by weight of tri-n-butylamine were added to 50 parts by weight of dry pyridine,
Stir at room temperature for 18 hours.
過剰のジクロロジメチルシランを留去し、冷却した後、
トリエチレングリコールモノブチルエーテル30重量を
加え、110〜130’lll:で6時間攪拌し。After distilling off excess dichlorodimethylsilane and cooling,
30 weight of triethylene glycol monobutyl ether was added, and the mixture was stirred at 110 to 130 liters for 6 hours.
100℃にまで冷却し、熱ろ過した。得られたろ液を、
氷水1000重量部に注ぎ、析出物をろ別し。It was cooled to 100°C and filtered hot. The obtained filtrate,
Pour into 1000 parts by weight of ice water and filter the precipitate.
水洗し、メタノール/水(1/1重量比)の混合溶液で
洗浄、乾燥し、ビス〔ブトキシトリエチレンオキシジメ
チルシロキシ〕ケイ素テトラヘキシルチオナフタロシア
ニン1.2重量部を得た。The product was washed with water, washed with a mixed solution of methanol/water (1/1 weight ratio), and dried to obtain 1.2 parts by weight of bis[butoxytriethyleneoxydimethylsiloxy]silicon tetrahexylthionaphthalocyanine.
実施例1
ジクロルメタン100重量部にテトラ−n−へキシルチ
オバナジルナフタロシアニン5重量部を溶解して得られ
た溶液を、ポリカーボネート樹脂製基板上に、500r
pmスピナーコーティング法で塗布した後、80〜90
℃で1時間乾燥して厚さ約8゜0人の記録層を得た。Example 1 A solution obtained by dissolving 5 parts by weight of tetra-n-hexylthiovanadylnaphthalocyanine in 100 parts by weight of dichloromethane was placed on a polycarbonate resin substrate for 500 rpm.
After applying with pm spinner coating method, 80-90
The recording layer was dried at a temperature of 1 hour to obtain a recording layer having a thickness of about 8.0 mm.
このようにして得られた光学記録媒体をターンテーブル
に取りつけ、ターンテーブルを1600rpmで回転し
ながら、スポットサイズ0.6μに集束した5mW、8
MHzのガリウムーアルミニウムーヒ素半導体レーザー
光線(830nm)を記録層にトラック状に照射して記
録を行なった。記録を完了した記録層には、鮮明なビッ
トが電子顕微鏡で観察された。また得られた光学記録媒
体を低出力ガリウムーアルミニウムーヒ素半導体レーザ
ー光線を入射し、反射光の検知を行なったところ、実用
に十分なS/N比を有する波形を示した。The optical recording medium obtained in this way was attached to a turntable, and while the turntable was rotating at 1600 rpm, 5 mW, 8
Recording was performed by irradiating the recording layer with a MHz gallium-aluminum-arsenic semiconductor laser beam (830 nm) in the form of a track. Clear bits were observed under an electron microscope in the recording layer where recording was completed. Furthermore, when a low-power gallium-aluminum-arsenic semiconductor laser beam was applied to the obtained optical recording medium and the reflected light was detected, a waveform having a practically sufficient S/N ratio was exhibited.
実施例2
市販のニトロセルロース樹脂3重量部をメチルエチルケ
トン100重量部に溶解して得られた溶液に。Example 2 A solution obtained by dissolving 3 parts by weight of a commercially available nitrocellulose resin in 100 parts by weight of methyl ethyl ketone.
さらにテトラフェニルチオチタニルナフタロシアニン5
重量部およびジクロロメタン200重量部を混合、溶解
させた。得られた溶液を耐熱性ガラス「パイレックスJ
(Corning Glass Works社製、
商品名)製基板上に50Orpmスピナーコーティング
法により塗布し、90℃の温度で2時間乾燥し、厚さ約
800人の記録層を得た。Furthermore, tetraphenylthiotitanylnaphthalocyanine 5
Parts by weight and 200 parts by weight of dichloromethane were mixed and dissolved. The resulting solution was coated with heat-resistant glass "Pyrex J"
(Manufactured by Corning Glass Works,
(trade name) by a 50 Orpm spinner coating method and dried at a temperature of 90° C. for 2 hours to obtain a recording layer with a thickness of about 800 nm.
このようにして得られた光学記録媒体に実施例1と同様
にして記録を施したところ、記録を完了した記録層には
、鮮明なピットが電子顕微鏡で観察され。When recording was performed on the optical recording medium thus obtained in the same manner as in Example 1, clear pits were observed under an electron microscope in the recorded layer.
また、実施例1と同様な入射レーザー光線の反射光の検
知を行なったところ、実用に十分なS/N比を有する波
形を示した。Further, when the reflected light of the incident laser beam was detected in the same manner as in Example 1, a waveform having a practically sufficient S/N ratio was shown.
実施例3
室温に保持した厚さ1鰭のアクリル樹脂製基板上に、真
空度1O−7Torrで、テトラ(2−7yoルフエニ
ルチオ)銅ナフタロシアニンを蒸着し、厚さ1000人
の蒸着膜を設けた。Example 3 Tetra(2-7yolphenylthio)copper naphthalocyanine was deposited on an acrylic resin substrate with a thickness of 1 fin kept at room temperature at a vacuum level of 10-7 Torr to form a deposited film with a thickness of 1,000 fins. .
このようにして得られた光学記録媒体に実施例1と同様
にして記録を施したところ、記録を完了した記録層には
鮮明なピントが電子顕微鏡で観察され。When recording was performed on the optical recording medium thus obtained in the same manner as in Example 1, a sharp focus was observed on the recorded layer using an electron microscope.
また、実施例1と同様な入射レーザー光線の反射光の検
知を行なったところ実用に十分なS/N比を有する波形
を示した。Further, when the reflected light of the incident laser beam was detected in the same manner as in Example 1, a waveform having a practically sufficient S/N ratio was shown.
実施例4
エタノール100重量部にテトラ(2−メトキシエトキ
シエチルチオ)バナジルナフタロシアニン3重量部を溶
解して得られた溶液を、ポリカーボネート樹脂製基板上
に500rpmスピナーコーティング法により塗布し、
80〜90℃で30分間乾燥して、厚さ約700人の記
録層を得た。このようにして得られた光学記録媒体に実
施例1と同様にして記録を施したところ、記録を完了し
た記録層には鮮明なピットが電子顕微鏡で観察され、ま
た、実施例1と同様な入射レーザー光線の反射光の検知
を行なったところ実用に十分なS/N比を有する波形を
示した。Example 4 A solution obtained by dissolving 3 parts by weight of tetra(2-methoxyethoxyethylthio)vanadylnaphthalocyanine in 100 parts by weight of ethanol was applied onto a polycarbonate resin substrate by a spinner coating method at 500 rpm.
It was dried at 80-90° C. for 30 minutes to obtain a recording layer with a thickness of about 700 mm. When recording was performed on the optical recording medium thus obtained in the same manner as in Example 1, clear pits were observed under an electron microscope in the recording layer after the recording was completed, and the same results as in Example 1 were observed. When the reflected light of the incident laser beam was detected, it showed a waveform with a practically sufficient S/N ratio.
実施例5
エタノール100重量部にビス〔トリへキシルシロキシ
〕ケイ素テトラフェニルチオナフタロシアニン5重量部
を溶解して得られた溶液を、ポリカーボネート樹脂製基
板上に、500rpmスピナーコーティング法で塗布し
た後、80〜90℃で30分間乾燥して厚さ約1000
人の記録層を得た。実施例1と同様にして記録を行なっ
たところ鮮明なピットが電子顕微鏡で観察され、実用に
十分なS/N比が得られた。Example 5 A solution obtained by dissolving 5 parts by weight of bis[trihexylsiloxy]silicon tetraphenylthionaphthalocyanine in 100 parts by weight of ethanol was applied onto a polycarbonate resin substrate using a spinner coating method at 500 rpm. Dry at ~90℃ for 30 minutes to a thickness of about 1000mm
Obtained a human record layer. When recording was carried out in the same manner as in Example 1, clear pits were observed under an electron microscope, and a practically sufficient S/N ratio was obtained.
実施例6
メチルセロソルブ100重量部にビス〔ブトキシトリエ
チレンオキシジメチルシロキシ〕ケイ素テトラヘキシル
チオナフタロシアニン2重量部を溶解して得られた溶液
を、ポリカーボネート樹脂製基板上に、500rpmス
ピナーコーティング法で塗布した後、80〜90℃で3
0分間乾燥して厚さ約800人の記録層を得た。実施例
1と同様にして記録を行なったところ鮮明なピットが電
子顕微鏡で観察され、実用に十分なS/N比が得られた
。Example 6 A solution obtained by dissolving 2 parts by weight of bis[butoxytriethyleneoxydimethylsiloxy]silicon tetrahexylthionapthalocyanine in 100 parts by weight of methyl cellosolve was coated on a polycarbonate resin substrate by a spinner coating method at 500 rpm. After that, 3 at 80-90℃
After drying for 0 minutes, a recording layer having a thickness of about 800 layers was obtained. When recording was carried out in the same manner as in Example 1, clear pits were observed under an electron microscope, and a practically sufficient S/N ratio was obtained.
本発明の光学記録媒体は1以上のような構成よりなり、
化学的、物理的に安定で、レーザー光線で高感度で記録
再生できる特徴を有する。The optical recording medium of the present invention has one or more configurations,
It is chemically and physically stable and can be recorded and reproduced with high sensitivity using laser beams.
Claims (1)
アニン系化合物の1種または2種以上を含有する有機薄
膜層を有することを特徴とする光学記録媒体。 一般式〔 I 〕 ▲数式、化学式、表等があります▼ 〔式中、X:イオウ原子、セレン原子またはテルル原子
を表わす。 A:置換もしくは未置換の脂肪族炭化水素基、置換もし
くは未置換の芳香族炭化水素基、または置換もしくは未
置換の芳香族複素環基を表わす。 M:水素原子、ハロゲン原子もしくは酸素原子を有して
もよい金属原子、または(OR_1)_p、(OSiR
_2R_3R_4)_g、〔OSiR_2R_3(OR
_4)〕_gを有してもよい金属原子を表わす。ここで
R_1、R_2、R_3、R_4は、それぞれ独立に、
水素原子、置換もしくは未置換の脂肪族炭化水素基、置
換もしくは未置換の芳香族炭化水素基、または置換もし
くは未置換の芳香族複素環基を表わし、p、qは0ない
し2の整数を表わす。 k、l、mおよびn:それぞれ独立に0ないし4の整数
を表わすが、全部が同時に0になることはない。〕[Scope of Claims] 1. An optical recording medium characterized by having an organic thin film layer containing one or more naphthalocyanine compounds represented by the following general formula [I] on a substrate. General formula [I] ▲Mathematical formulas, chemical formulas, tables, etc. are available▼ [In the formula, X: represents a sulfur atom, selenium atom, or tellurium atom. A: Represents a substituted or unsubstituted aliphatic hydrocarbon group, a substituted or unsubstituted aromatic hydrocarbon group, or a substituted or unsubstituted aromatic heterocyclic group. M: a metal atom that may have a hydrogen atom, a halogen atom, or an oxygen atom, or (OR_1)_p, (OSiR
_2R_3R_4)_g, [OSiR_2R_3(OR
_4)] Represents a metal atom that may have _g. Here, R_1, R_2, R_3, R_4 are each independently,
Represents a hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group, a substituted or unsubstituted aromatic hydrocarbon group, or a substituted or unsubstituted aromatic heterocyclic group, and p and q represent an integer from 0 to 2. . k, l, m, and n: Each independently represents an integer from 0 to 4, but they cannot all be 0 at the same time. ]
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63137073A JPH01105788A (en) | 1987-07-27 | 1988-06-03 | Optical recording medium |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-187464 | 1987-07-27 | ||
JP18746487 | 1987-07-27 | ||
JP63137073A JPH01105788A (en) | 1987-07-27 | 1988-06-03 | Optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01105788A true JPH01105788A (en) | 1989-04-24 |
Family
ID=26470499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63137073A Pending JPH01105788A (en) | 1987-07-27 | 1988-06-03 | Optical recording medium |
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Country | Link |
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JP (1) | JPH01105788A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01287175A (en) * | 1988-05-13 | 1989-11-17 | Yamamoto Chem Inc | Naphthalocyanine compound |
JPH02219864A (en) * | 1989-02-22 | 1990-09-03 | Teijin Ltd | Naphthalocyanine compound |
US4977068A (en) * | 1990-03-09 | 1990-12-11 | Hoechst Celanese Corp. | Novel siloxy substituted naphthalocyanines and method of preparation |
JPH0379683A (en) * | 1989-08-22 | 1991-04-04 | Toyo Ink Mfg Co Ltd | Near infrared-absorbing ink, heat-sensitive transfer material and detecting method |
JPH0586300A (en) * | 1992-01-31 | 1993-04-06 | Yamamoto Chem Inc | Production of naphthalocyanine compound |
US5484685A (en) * | 1988-10-25 | 1996-01-16 | Hitachi, Ltd. | Naphthalocyanine derivatives, production thereof, optical recording medium using the same, and production thereof |
US11174274B2 (en) * | 2017-04-07 | 2021-11-16 | Yamamoto Chemicals, Inc. | Naphthalocyanine compound, method for producing same, and use thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6264597A (en) * | 1985-09-18 | 1987-03-23 | Tdk Corp | Optical recording medium |
-
1988
- 1988-06-03 JP JP63137073A patent/JPH01105788A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6264597A (en) * | 1985-09-18 | 1987-03-23 | Tdk Corp | Optical recording medium |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01287175A (en) * | 1988-05-13 | 1989-11-17 | Yamamoto Chem Inc | Naphthalocyanine compound |
US5484685A (en) * | 1988-10-25 | 1996-01-16 | Hitachi, Ltd. | Naphthalocyanine derivatives, production thereof, optical recording medium using the same, and production thereof |
JPH02219864A (en) * | 1989-02-22 | 1990-09-03 | Teijin Ltd | Naphthalocyanine compound |
JPH0379683A (en) * | 1989-08-22 | 1991-04-04 | Toyo Ink Mfg Co Ltd | Near infrared-absorbing ink, heat-sensitive transfer material and detecting method |
US4977068A (en) * | 1990-03-09 | 1990-12-11 | Hoechst Celanese Corp. | Novel siloxy substituted naphthalocyanines and method of preparation |
JPH0586300A (en) * | 1992-01-31 | 1993-04-06 | Yamamoto Chem Inc | Production of naphthalocyanine compound |
US11174274B2 (en) * | 2017-04-07 | 2021-11-16 | Yamamoto Chemicals, Inc. | Naphthalocyanine compound, method for producing same, and use thereof |
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