JPH01102951A - Semiconductor lead frame with excellent resin close-contact performance - Google Patents
Semiconductor lead frame with excellent resin close-contact performanceInfo
- Publication number
- JPH01102951A JPH01102951A JP26062987A JP26062987A JPH01102951A JP H01102951 A JPH01102951 A JP H01102951A JP 26062987 A JP26062987 A JP 26062987A JP 26062987 A JP26062987 A JP 26062987A JP H01102951 A JPH01102951 A JP H01102951A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- resin
- contact performance
- close contact
- performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 title claims abstract description 23
- 229920005989 resin Polymers 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 6
- 238000004458 analytical method Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013020 steam cleaning Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止用の半導体のリードフレームに関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor lead frame for resin encapsulation.
樹脂封止される半導体では、リードフレームと樹脂の間
に間隙が生じ、ここから水分が侵入して半導体の配線を
損傷するという事故がしばしば生ずる。また、樹脂とリ
ードフレームの間に間隙が生ずると、半導体製造中また
は実装中の温度変化の際に発生する熱応力によって樹脂
に亀裂が生じやすくなることも熱応力解析の結果から明
らかにされている。したがって、リードフレームと樹脂
の密着性は、半導体装置の信頼性を高める上で欠かせな
い要因である。特に最近はチップサイズが大型化し、樹
脂とリードフレームの接合面積が相対的に小さくなる傾
向にあるので、密着性がますます重要になっている。In semiconductors that are sealed with resin, a gap is created between the lead frame and the resin, and accidents often occur in which moisture enters through the gap and damages the wiring of the semiconductor. Additionally, the results of thermal stress analysis have revealed that when a gap is created between the resin and the lead frame, the resin is more likely to crack due to thermal stress generated during temperature changes during semiconductor manufacturing or mounting. There is. Therefore, the adhesion between the lead frame and the resin is an essential factor in improving the reliability of the semiconductor device. Particularly in recent years, as chip sizes have increased and the bonding area between resin and lead frame has tended to become relatively small, adhesion has become increasingly important.
従来、リードフレームと樹脂の密着性を高める方法とし
て、リードフレームの表面粗さを粗くする方法、酸化被
膜をつける方法、リードフレームにメツキする方法など
が提案されている。Conventionally, methods of increasing the adhesion between a lead frame and a resin have been proposed, such as increasing the surface roughness of the lead frame, applying an oxide film, and plating the lead frame.
リードフレームと樹脂の密着性を高めるための上記の方
法には、それぞれ、効果が不十分であること、メツキ性
やはんだ性が悪くなること、製造コストが高くなること
などの欠点がある。The above-mentioned methods for increasing the adhesion between the lead frame and the resin each have drawbacks such as insufficient effectiveness, poor plating and solderability, and increased manufacturing costs.
本発明の目的は、低コストで、メツキ性やはんだ性の劣
化をきたさず、樹脂との密着性を大幅に高めたリードフ
レームを提供することにある。An object of the present invention is to provide a lead frame that is low in cost, does not cause deterioration in plating or solderability, and has significantly improved adhesion to resin.
本発明は、被検材の表面下１０人の範囲を除去して得ら
れた表面で測定したＸ線光電子分光分析法によるＣ量が
２０原子％以下であることを特徴とする樹脂密着性の優
れた半導体リードフレームである。The present invention provides resin adhesion characterized in that the amount of C measured by X-ray photoelectron spectroscopy on the surface obtained by removing 10 areas below the surface of the test material is 20 atomic % or less. It is an excellent semiconductor lead frame.
リードフレーム素材の表面をＥＳＣＡ（Ｘ線光電子分光
分析法）によって分析してみると、Ｃと０によって汚染
されていることがわかった。このうちＣは、リードフレ
ームの製造工程中または梱包の際に付着した油類に由来
するものと考えられ、またＯは大気中から酸化または吸
着されたものと考えられる。本発明はこの汚染元素のう
ち、とくにＣが、リードフレームと樹脂との密着性を劣
化させている最大の要因であることを見出し、これを低
減することによって、リードフレームと樹脂との密着性
を改善するに至ったものである。When the surface of the lead frame material was analyzed by ESCA (X-ray photoelectron spectroscopy), it was found that it was contaminated with C and 0. Of these, C is thought to originate from oils deposited during the manufacturing process or packaging of the lead frame, and O is thought to be oxidized or adsorbed from the atmosphere. The present invention has discovered that among these contaminating elements, C in particular is the biggest factor in deteriorating the adhesion between the lead frame and the resin, and by reducing this, the adhesion between the lead frame and the resin can be improved. This is what led to the improvement.
リードフレーム表面のＣによる汚染状況は、ＥＳＣＡに
よる最表面の分析では、正確には評価できない。しかし
、表面を１分間のスパッタリングによって約１０人除去
した面でＥＳＣＡによる分析を行なうと、樹脂との密着
性の良いリードフレームとそうでないものとの間でＣ量
に歴然と差がみられる。樹脂との密着性の良いリードフ
レームは、１分間のスパッタリングにより最表面から約
１０人除去した面でのＣ含有量がすべて２０原子ｘ以下
であるのに対し、密着性の悪いリードフレームは、この
値が２０原子％を越えていた。密着性の良いものと悪い
もので、酸素含有量には一定の傾向は認められなかった
。なお、スパッタリングによる表面除去をさらに進めて
、最表面から約３０人入った面の測定では、密着性の良
し悪しにかかわらず、どのリードフレームも、炭崇およ
び酸素による汚染はほとんど除去されていた。このこと
から。The state of C contamination on the lead frame surface cannot be accurately evaluated by analyzing the outermost surface using ESCA. However, when an ESCA analysis is performed on a surface from which about 10 particles have been removed by sputtering for 1 minute, there is a clear difference in the amount of C between lead frames that have good adhesion to the resin and those that do not. A lead frame with good adhesion to the resin has a C content of less than 20 atoms x on all surfaces after about 10 atoms are removed from the outermost surface by sputtering for 1 minute, whereas a lead frame with poor adhesion has a C content of 20 atoms or less. This value exceeded 20 at.%. No fixed trend was observed in the oxygen content between those with good adhesion and those with poor adhesion. Further surface removal by sputtering was carried out, and when approximately 30 people took measurements from the topmost surface, it was found that most of the contamination caused by carbon and oxygen had been removed from all lead frames, regardless of the adhesion quality. . From this.
汚染の深さは、高々約３０人程度と考えられる。The depth of contamination is thought to be around 30 people at most.
リードフレーム表面におけるＣ汚染を低減するためには
、ドライ水素中で焼鈍する方法、表面活性化剤と有機溶
剤で入念に洗浄する方法などが有効である。このうち、
後者の一例として、次のＡ洗浄工程がある。In order to reduce C contamination on the lead frame surface, effective methods include annealing in dry hydrogen and careful cleaning with a surface activator and an organic solvent. this house,
An example of the latter is the following A cleaning process.
■中性洗剤（表面活性化剤）浸漬 １０分■水洗（イ
オン交換水） １分■トリクロロエチレン蒸
気洗浄 １分■トリクロロエチレン浸漬 ５
分■アセトン洗浄
■乾燥
なお、ＥＳＣＡにおける光電子脱出深さは数十人と言わ
れ、またこの深さは、Ｘ線発生のための電子加速電圧等
の分析条件にほとんど影響されないと言われている。■ Soaking in neutral detergent (surface activator) for 10 minutes ■ Washing with water (ion-exchanged water) for 1 minute ■ Trichlorethylene steam cleaning for 1 minute ■ Soaking in trichlorethylene 5
minutes ■ Acetone cleaning ■ Drying Note that the photoelectron escape depth in ESCA is said to be several dozen, and this depth is said to be almost unaffected by analysis conditions such as the electron acceleration voltage for X-ray generation. .
実施例１
市販のＦｅ−４２％Ｎｉ合金のリードフレーム素材（０
，２５ｍｍ厚）から、受入ままおよび７２５〜８００℃
で各２分間ドライ水素中で焼鈍した状態の合計４試料に
ついて、表面を１分間スパッタリング（約１０人除去）
後の面のＣ含有量をＥＳＣＡにより分析した。また、各
試料上に日東電工製樹脂ＭＰ−１５０８Ｇを底面が１１
．３ｎａφの円錐台状にモールドし、リードフレーム素
材試料と樹脂の剪断接着力をプッシュプルゲージを用い
て測定した。結果を第１表に示す、第１表より、ドライ
水素中で焼鈍し、表面のＣ含有量を２０原子％以下に低
下させたＮ００２〜４の３試料の接着力が、受入ままで
、表面のＣ含有量が２０原子で以上の試料Ｎ００１の接
着力に比べて１０倍以上改善されていることがわかる。Example 1 Commercially available Fe-42%Ni alloy lead frame material (0
, 25mm thick), as received and 725-800℃
For a total of 4 samples annealed in dry hydrogen for 2 minutes each, the surface was sputtered for 1 minute (approximately 10 people removed).
The C content of the rear surface was analyzed by ESCA. In addition, on each sample, Nitto Denko resin MP-1508G was applied with a bottom surface of 11
．． It was molded into a 3naφ truncated cone shape, and the shear adhesive force between the lead frame material sample and the resin was measured using a push-pull gauge. The results are shown in Table 1. From Table 1, it can be seen that the adhesion strength of the three samples N002 to 4, which were annealed in dry hydrogen and whose surface C content was reduced to 20 atomic % or less, was It can be seen that when the C content was 20 atoms, the adhesive strength was improved by more than 10 times as compared to the adhesive force of sample No. 001.
第１表
実施例２
市販の３種類のＦｅ−４２％Ｎｉ合金のリードフレーム
素材（０，２５＋ｍ厚）のそれぞれについて、単にトリ
クレン中に１０分浸漬しただけの試料（Ｎｏ、５〜７）
と前記Ａ洗浄工程で入念に洗浄した試料（Ｎｏ、８〜１
０）を作製し、実施例１と同じ方法で表面汚染Ｃ量とＭ
Ｐ−１５０３Ｇ樹脂との剪断接着力の関係を調べた・結
果を第２表に示す。第２表からＡ洗浄工程を経て５表面
Ｃ量を２０原子ｘ以下に低下させた試料（Ｎｏ、８〜１
０）は単にトリクレン中浸漬だけで、表面Ｃ量が２０原
子２を越える試料（Ｎｏ、５＝７）に比べて接着力が１
０倍以上向上していることがわかる。Table 1 Example 2 Samples of three types of commercially available Fe-42%Ni alloy lead frame materials (0.25+m thick) simply immersed in trichlene for 10 minutes (No. 5 to 7)
and the samples carefully washed in the A washing step (No. 8 to 1).
0) was prepared, and the surface contamination C amount and M were determined in the same manner as in Example 1.
The relationship between shear adhesive strength and P-1503G resin was investigated. The results are shown in Table 2. From Table 2, samples (No. 8 to 1
0) was simply immersed in trichlene, and the adhesive strength was 1 compared to the sample with a surface C content exceeding 20 atoms 2 (No. 5 = 7).
It can be seen that the improvement is more than 0 times.
第２表
〔発明の効果〕
本発明によれば、コストの大幅な増加やメツキ性やはん
だ付性の劣化をきたさずに従来不十分であったリードフ
レームと樹脂の密着力を大幅に向上し、半導体装置の信
頼性を大幅に高めることができる。Table 2 [Effects of the Invention] According to the present invention, the adhesion between the lead frame and the resin, which was insufficient in the past, can be significantly improved without significantly increasing cost or deteriorating the plating and soldering properties. , the reliability of semiconductor devices can be greatly improved.
Claims (1)
で測定したＸ線光電子分光分析法によるＣ量が２０原子
％以下であることを特徴とする樹脂密着性の優れた半導
体リードフレーム。A semiconductor lead frame with excellent resin adhesion, characterized in that the amount of C measured by X-ray photoelectron spectroscopy on a surface obtained by removing a region 10 Å below the surface of a test material is 20 atomic % or less. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260629A JP2721162B2 (en) | 1987-10-15 | 1987-10-15 | Semiconductor lead frame with excellent resin adhesion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260629A JP2721162B2 (en) | 1987-10-15 | 1987-10-15 | Semiconductor lead frame with excellent resin adhesion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01102951A true JPH01102951A (en) | 1989-04-20 |
| JP2721162B2 JP2721162B2 (en) | 1998-03-04 |
Family
ID=17350575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62260629A Expired - Fee Related JP2721162B2 (en) | 1987-10-15 | 1987-10-15 | Semiconductor lead frame with excellent resin adhesion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2721162B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119656A (en) * | 1984-11-15 | 1986-06-06 | Hitachi Metals Ltd | Material for lead frame for ic |
-
1987
- 1987-10-15 JP JP62260629A patent/JP2721162B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119656A (en) * | 1984-11-15 | 1986-06-06 | Hitachi Metals Ltd | Material for lead frame for ic |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2721162B2 (en) | 1998-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |