JP7461813B2 - SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM - Google Patents

Description

The present disclosure relates to a substrate processing method, a substrate processing apparatus, and a computer-readable recording medium.

Patent Document 1 discloses a nozzle standby method that includes supplying a chemical solution from a nozzle to the surface of a substrate, moving the nozzle into a bath equipped with a solvent reservoir to supply the solvent vapor generated from the solvent reservoir to the tip of the nozzle, and filling the bath with an inert gas.

JP 2010-172877 A

This disclosure describes a substrate processing method, a substrate processing apparatus, and a computer-readable recording medium that can reduce the size of a nozzle cleaning bath.

One example of a substrate processing method includes disposing the tip of the nozzle in a storage recess of a cleaning bath after supplying a processing liquid to the surface of the substrate, supplying a solvent into the storage recess through a supply flow path formed in the cleaning bath that leads to the storage recess after disposing the tip in the storage recess, and supplying an inert gas into the storage recess through the supply flow path after supplying the solvent.

The substrate processing method, substrate processing apparatus, and computer-readable recording medium disclosed herein make it possible to miniaturize the nozzle cleaning bath.

FIG. 1 is a perspective view showing an example of a substrate processing system. FIG. 2 is a side view that diagrammatically illustrates the inside of the substrate processing system of FIG. FIG. 3 is a top view that diagrammatically illustrates the inside of the substrate processing system of FIG. FIG. 4 is a side view that illustrates a schematic diagram of an example of the liquid processing unit. FIG. 5 is a cross-sectional view that illustrates an example of the cleaning unit. FIG. 6 is a block diagram illustrating an example of a substrate processing system. FIG. 7 is a schematic diagram illustrating an example of a hardware configuration of the controller. FIG. 8 is a flowchart illustrating an example of a nozzle cleaning procedure. FIG. 9 is a graph showing the test results.

In the following description, the same elements or elements with the same functions will be designated by the same reference numerals, and duplicate descriptions will be omitted.

[Substrate Processing System]
1 to 3, a configuration of a substrate processing system 1 will be described. The substrate processing system 1 includes a coating and developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller Ctr (controller).

The exposure device 3 is configured to transfer the substrate W between the coating and developing device 2 and perform exposure processing (pattern exposure) of the resist film formed on the surface Wa (see FIG. 4) of the substrate W. The exposure device 3 may selectively irradiate the exposure target portion of the resist film with energy rays by a method such as liquid immersion exposure.

The coating and developing apparatus 2 is configured to form a resist film on the surface Wa of the substrate W before the exposure process by the exposure device 3. The coating and developing apparatus 2 is configured to perform a development process on the resist film after the exposure process.

The substrate W may be disk-shaped or may be a plate-shaped other than circular, such as a polygon. The substrate W may have a cutout portion cut out of a portion. The cutout portion may be, for example, a notch (a U-shaped, V-shaped, or other groove) or a linear portion extending in a straight line (so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, a FPD (Flat Panel Display) substrate, or any other type of substrate. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

As shown in Figures 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 may be arranged in a row, for example, in the horizontal direction.

The carrier block 4 has a carrier station 12 and a loading/unloading section 13. The carrier station 12 supports a plurality of carriers 11 (containers) in a removable manner. The carrier 11 is configured to store at least one substrate W in a sealed state (see Figures 2 and 3). The carrier 11 includes an opening/closing door 11a for loading and unloading the substrate W.

The loading/unloading section 13 is located between the carrier station 12 and the processing block 5. As shown in Figures 1 and 3, the loading/unloading section 13 has multiple opening/closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening/closing doors 11a and 13a are simultaneously opened, thereby connecting the inside of the carrier 11 to the inside of the loading/unloading section 13. As shown in Figures 2 and 3, the loading/unloading section 13 has a built-in transport arm A1. The transport arm A1 is configured to remove the substrate W from the carrier 11 and deliver it to the processing block 5, and to receive the substrate W from the processing block 5 and return it to the carrier 11.

The processing block 5 includes processing modules PM1 to PM3, as shown in FIG. 2.

The processing module PM1 is configured to form an underlayer film on the surface of the substrate W. As shown in FIG. 3, the processing module PM1 includes a liquid processing unit U1 (processing chamber), a heat processing unit U2 (processing chamber), and a transport arm A2 configured to transport the substrate W to these units. The liquid processing unit U1 of the processing module PM1 may be configured to apply, for example, a coating liquid for forming an underlayer film to the substrate W. The heat processing unit U2 of the processing module PM1 may be configured to perform, for example, a heat treatment to harden the coating film formed on the substrate W by the liquid processing unit U1 to form an underlayer film. Examples of the underlayer film include an anti-reflective (SiARC) film, a SOG (Spin On Glass) film, a SOC (Spin On Carbon) film, and an amorphous carbon film.

The processing module PM2 is configured to form a resist film on the base film. The processing module PM2 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A3 configured to transport the substrate W to these units. The liquid processing unit U1 of the processing module PM2 may be configured to apply a coating liquid for forming a resist film to the substrate W, for example. The thermal processing unit U2 of the processing module PM2 may be configured to perform a heating process (PAB: Pre Applied Bake) to harden the coating film formed on the substrate W by the liquid processing unit U1 to form a resist film.

The processing module PM3 is configured to perform a development process on the exposed resist film. The processing module PM3 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A4 configured to transport the substrate W to these units. The liquid processing unit U1 of the processing module PM3 may be configured, for example, to partially remove the resist film to form a resist pattern (not shown). The thermal processing unit U2 of the processing module PM3 may be configured, for example, to perform a heating process before the development process (PEB: Post Exposure Bake), a heating process after the development process (PB: Post Bake), etc.

As shown in Figures 2 and 3, the processing block 5 includes a shelf unit 14 located near the carrier block 4 and a shelf unit 15 located near the interface block 6. A transport arm A6 is provided near the shelf unit 14. The transport arm A6 is configured to raise and lower the substrate W between the cells of the shelf unit 14.

The interface block 6 incorporates a transport arm A7 and is disposed between the processing block 5 and the exposure device 3. The transport arm A7 is configured to remove a substrate W from the shelf unit 15 and pass it to the exposure device 3, and to receive a substrate W from the exposure device 3 and return it to the shelf unit 15.

The controller Ctr is configured to control the coating and developing apparatus 2 partially or entirely. Details of the controller Ctr will be described later. The controller Ctr may be configured to send and receive signals to and from the controller of the exposure apparatus 3, and to control the substrate processing system 1 as a whole in cooperation with the controller of the exposure apparatus 3.

[Liquid processing unit]
4 and 5, the liquid processing unit U1 will be described in more detail. The liquid processing unit U1 includes a substrate holding unit 20, a liquid supply unit 30, and a cleaning unit 40.

The substrate holding unit 20 includes a rotating unit 21, a shaft 22, and a holding unit 23. The rotating unit 21 is configured to operate based on an operation signal from the controller Ctr and rotate the shaft 22. The rotating unit 21 is a power source such as an electric motor. The holding unit 23 is provided at the tip of the shaft 22. The substrate W is placed on the holding unit 23. The holding unit 23 is configured to hold the substrate W approximately horizontally, for example, by suction. That is, the substrate holding unit 20 rotates the substrate W around a central axis (rotation axis) perpendicular to the surface Wa of the substrate W with the substrate W in an approximately horizontal position.

The liquid supply unit 30 is configured to supply a processing liquid L to the surface Wa of the substrate W. The processing liquid L of the processing module PM1 may be, for example, a coating liquid (chemical liquid) for forming an underlayer film. The processing liquid L of the processing module PM2 may be, for example, a resist liquid for forming a resist film. The processing liquid L of the processing module PM3 may be, for example, a developer.

The liquid supply unit 30 includes a supply mechanism 31, a drive mechanism 32 (drive unit), and a nozzle 33. The supply mechanism 31 is configured to send the processing liquid L stored in a container (not shown) to the nozzle 33 by a liquid delivery mechanism (not shown) such as a pump based on a signal from the controller Ctr. The drive mechanism 32 is configured to move the nozzle 33 in the height direction and the horizontal direction based on a signal from the controller Ctr. The nozzle 33 is configured to eject the processing liquid L supplied from the supply mechanism 31 onto the surface Wa of the substrate W. The nozzle 33 is configured to be movable between above the substrate W (above the substrate holder 20) and the cleaning unit 40 by the drive mechanism 32.

The cleaning unit 40 is configured to clean the tip 33a of the nozzle 33 after the processing liquid L is supplied to the surface Wa of the substrate W. As shown in FIG. 4, the cleaning unit 40 is located away from the substrate holding unit 20. As shown in detail in FIG. 5, the cleaning unit 40 includes a cleaning bath 41, a metal member 42, a supply mechanism 43 (solvent supply mechanism), a supply mechanism 44 (gas supply mechanism), a suction mechanism 45 (suction mechanism), and an exhaust mechanism 46 (exhaust mechanism).

The cleaning bath 41 is made of a fluororesin such as polytetrafluoroethylene, and includes a storage recess 41a in which the tip 33a of the nozzle 33 can be placed. The storage recess 41a extends in the vertical direction and opens upward. When viewed from above, the size of the storage recess 41a is slightly larger than the nozzle 33. Therefore, when the nozzle 33 is positioned inside the storage recess 41a, the nozzle 33 functions as a lid for the storage recess 41a. A drain 41b for draining liquid is connected to the bottom wall of the storage recess 41a.

The cleaning bath 41 includes supply flow paths F1-F3 and an exhaust flow path F4 that are fluidly connected to the storage recess 41a. The supply flow path F1 extends horizontally. One end of the supply flow path F1 opens into the middle part of the storage recess 41a in the vertical direction. The supply flow path F2 extends horizontally in continuity with the supply flow path F1. Therefore, one end of the supply flow path F2 is connected to the other end of the supply flow path F1. The other end of the supply flow path F2 opens into the side of the cleaning bath 41.

The supply flow path F3 extends vertically. One end of the supply flow path F3 merges with the connection of the supply flow paths F1 and F2. In other words, the supply flow path F3 can be said to be a branch flow path branched off from the supply flow paths F1 and F2 that extend integrally. The other end of the supply flow path F3 opens into the upper surface of the cleaning bath 41.

The exhaust flow path F4 is located below the supply flow paths F1 to F3 and extends horizontally. One end of the exhaust flow path F4 opens at the lower end of the storage recess 41a. That is, the opening of the exhaust flow path F4 in the storage recess 41a is located below the opening of the supply flow path F1 in the storage recess 41a. The other end of the exhaust flow path F4 opens at the side of the cleaning bath 41.

The metal member 42 is, for example, a plate-shaped member made of stainless steel, and is arranged on the upper surface of the cleaning bath 41 so as to cover the periphery of the opening of the storage recess 41a. The metal member 42 includes a through hole of approximately the same size as the opening of the storage recess 41a. The through hole is connected to the opening of the storage recess 41a. The metal member 42 is grounded via a conductor and is configured to remove static electricity generated near the opening of the storage recess 41a. The metal member 42 may be arranged in another area of the cleaning bath 41 where static electricity is likely to be generated. For example, the metal member 42 may be arranged on the upper surface of the cleaning bath 41 so as to cover the periphery of the opening at the other end of the supply flow path F3, or may be arranged inside the cleaning bath 41 so as to cover the area where the supply flow paths F1, F2 and the supply flow path F3 join together.

The supply mechanism 43 is configured to supply the solvent stored in a container (not shown) into the storage recess 41a through the supply flow paths F1 and F2 by a liquid delivery mechanism (not shown) such as a pump based on a signal from the controller Ctr. The solvent may be, for example, dibutyl ether.

The supply mechanism 44 is configured to supply the inert gas stored in a container (not shown) into the storage recess 41a through the supply passages F1 and F3 by means of a gas supply mechanism (not shown) such as a pump and a supply passage F5 based on a signal from the controller Ctr. The inert gas may be, for example, nitrogen or a rare gas. The supply passage F5 is fluidly connected to the supply passage F3.

The suction mechanism 45 is configured to circulate the working fluid stored in a container (not shown) to the discharge flow path F6 by a fluid transfer means (not shown) such as a pump based on a signal from the controller Ctr. The working fluid may be, for example, an inert gas (nitrogen, rare gas, etc.) or a liquid. When the working fluid is a liquid, the discharge flow path F6 may be located below the supply flow paths F1 and F3 to prevent the working fluid from mixing with the supply flow paths F1 and F3.

The discharge flow passage F6 crosses the supply flow passage F5 so as to communicate with the supply flow passage F5. The working fluid may be the same inert gas as the inert gas flowing through the supply flow passage F5. In this case, the inert gas as the working fluid may be supplied to the discharge flow passage F6 from the inert gas supply source (container) of the supply mechanism 44. Since the middle part of the discharge flow passage F6 is fluidly connected to the supply flow passages F1 and F3 via the supply flow passage F5,

Valves V1 and V2 are provided in the supply flow path F5. Valve V1 is disposed between the supply mechanism 44 and the discharge flow path F6. Valve V2 is disposed between the discharge flow path F6 and the supply flow path F3. Valve V3 is provided in the discharge flow path F6. Valve V3 is disposed between the suction mechanism 45 and the supply flow path F5. Valves V1 to V3 are configured to be able to open and close based on a signal from the controller Ctr.

The exhaust mechanism 46 is configured to exhaust the inside of the accommodation recess 41a through the exhaust passage F4 based on a signal from the controller Ctr. The exhaust mechanism 46 may be, for example, a pump.

[Controller details]
As shown in Fig. 6, the controller Ctr has a reading unit M1, a memory unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a division of the functions of the controller Ctr into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being realized by the execution of a program, and may be realized by a dedicated electric circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the same.

The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the coating and developing apparatus 2. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

The storage unit M2 is configured to store various data. For example, the storage unit M2 may store a program read from the recording medium RM by the reading unit M1, setting data input by an operator via an external input device (not shown), etc. The program may be configured to operate each part of the coating and developing apparatus 2. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

The processing unit M3 is configured to process various data. For example, the processing unit M3 may generate signals for operating the liquid processing unit U1, the heat processing unit U2, etc., based on the various data stored in the memory unit M2.

The instruction unit M4 is configured to transmit the operation signal generated by the processing unit M3 to various devices.

The hardware of the controller Ctr may be configured, for example, by one or more control computers. As shown in FIG. 7, the controller Ctr includes a circuit C1 as a hardware configuration. The circuit C1 may be configured by electric circuit elements. The circuit C1 may include a processor C2, a memory C3, a storage C4, a driver C5, and an input/output port C6.

The processor C2 cooperates with at least one of the memory C3 and storage C4 to execute programs and input and output signals via the input/output port C6, thereby configuring each of the functional modules described above. The memory C3 and storage C4 function as the memory unit M2. The driver C5 is a circuit that drives each of the various devices of the coating and developing apparatus 2. The input/output port C6 inputs and outputs signals between the driver C5 and the various devices of the coating and developing apparatus 2 (e.g., the liquid processing unit U1, the heat processing unit U2, etc.).

The substrate processing system 1 may include one controller Ctr, or may include a controller group (controller) composed of multiple controllers Ctr. When the substrate processing system 1 includes a controller group, each of the above-mentioned functional modules may be realized by one controller Ctr, or may be realized by a combination of two or more controllers Ctr. When the controller Ctr is composed of multiple computers (circuits C1), each of the above-mentioned functional modules may be realized by one computer (circuit C1), or may be realized by a combination of two or more computers (circuits C1). The controller Ctr may have multiple processors C2. In this case, each of the above-mentioned functional modules may be realized by one processor C2, or may be realized by a combination of two or more processors C2.

Some of the functions of the controller Ctr of the substrate processing system 1 may be provided in a device separate from the substrate processing system 1, and connected to the substrate processing system 1 via a network to realize various operations in this embodiment. For example, if the functions of the processor C2, memory C3, and storage C4 of multiple substrate processing systems 1 are realized together in one or more separate devices, it may be possible to collectively manage and control the information and operations of multiple substrate processing systems 1 remotely.

[Nozzle cleaning method]
5 and 8, a method for cleaning the tip portion 33a of the nozzle 33 will be described. In the initial state, the valves V1 to V3 are all closed.

First, the controller Ctr instructs the drive mechanism 32 to move the nozzle 33 waiting in the storage recess 41a of the cleaning bath 41 onto the substrate W held by the substrate holder 20 (see step S11 in FIG. 8).

Next, the controller Ctr instructs the supply mechanism 31 to supply the processing liquid L to the front surface Wa of the substrate W (see step S12 in FIG. 8). The substrate W is then transported to the thermal processing unit U2 and heated.

Next, the controller Ctr instructs the drive mechanism 32 to move the nozzle 33 to the cleaning bath 41 so that the tip 33a of the nozzle 33 is positioned within the storage recess 41a (see step S13 in FIG. 8). In this state, the controller Ctr instructs the supply mechanism 43 to supply the solvent into the storage recess 41a through the supply flow paths F1 and F2 (see step S14 in FIG. 8). After cleaning the tip 33a of the nozzle 33, a portion of the supplied solvent is discharged from the drain 41b. Another portion of the supplied solvent may remain attached to the supply flow path F1. The supply time of the solvent to the storage recess 41a may be, for example, about 2 to 3 seconds, or about 5 seconds.

Next, the controller Ctr instructs the valves V2 and V3 to open. The controller Ctr also instructs the suction mechanism 45 to allow the working fluid to flow through the discharge flow path F6. When the working fluid flows through the discharge flow path F6, the pressure in the discharge flow path F6 becomes relatively low due to the Venturi effect. Therefore, if any solvent remains in the supply flow path F1, the remaining solvent is discharged to the outside through the supply flow paths F1 and F3 and the discharge flow path F6 (see step S15 in FIG. 8).

Next, the controller Ctr instructs the valves V1 and V2 to close the valve V2 and open the valve V1. The controller Ctr also instructs the supply mechanism 44 to supply the inert gas into the storage recess 41a through the supply flow paths F1, F3, and F5 (see step S16 in FIG. 8). Furthermore, substantially simultaneously with the supply of the inert gas into the storage recess 41a, the controller Ctr instructs the exhaust mechanism 46 to exhaust the inside of the storage recess 41a through the exhaust flow path F4 (see same).

The supply of the inert gas to the storage recess 41a by the supply mechanism 44 may be started a predetermined time after the tip 33a of the nozzle 33 is placed in the storage recess 41a. In this case, a sufficient time is ensured for the solvent to be sucked from the supply flow path before the inert gas is supplied to the tip 33a of the nozzle 33. As a result, the solvent remaining in the storage recess 41a is also sucked through the supply flow paths F1 and F2 within the ensured time. Therefore, when the inert gas is supplied, the amount of solvent remaining in the storage recess 41a tends to be small. Therefore, the generation of mist resulting from the remaining solvent is suppressed. In addition, in this case, a sufficient time is ensured for the residual solvent to be sucked through the supply flow paths F1 and F3 and the discharge flow path F6 before the inert gas is supplied to the storage recess 41a. The above-mentioned predetermined time may be, for example, about 2 to 3 seconds, or about 5 seconds.

The exhaust flow rate from the storage recess 41a by the exhaust mechanism 46 may be set to be equal to or greater than the supply flow rate of the inert gas to the storage recess 41a by the supply mechanism 44. In this case, even if the solvent remains in the supply flow path F1 after the processing of step S15 in FIG. 8, the remaining solvent tends to be more likely to flow toward the exhaust flow path F6. Therefore, the mist resulting from the remaining solvent is less likely to spread outside the storage recess 41a. The supply flow rate of the inert gas to the storage recess 41a may be set to, for example, about 1 liter/min to 5 liters/min.

The exhaust flow rate from the storage recess 41a by the exhaust mechanism 46 is equal to or greater than the supply flow rate of the inert gas to the storage recess 41a, and may be set to, for example, about 1 L/min to 5 L/min. If the exhaust flow rate is 1 L/min or greater, the mist resulting from the residual solvent tends not to spread outside the storage recess 41a. If the exhaust flow rate is 5 L/min or less, outside air tends not to enter the storage recess 41a through the opening of the storage recess 41a due to exhaust through the exhaust flow path F4.

This completes cleaning of the tip 33a of the nozzle 33. This state is maintained until the nozzle 33 starts to supply the processing liquid L to the subsequent substrate W.

[Action]
However, a waiting time occurs between when the processing liquid L is supplied from the nozzle 33 to the substrate W and when the processing liquid L is supplied from the nozzle 33 to the subsequent substrate W again. During that time, the processing liquid L present in the tip 33a of the nozzle 33 may react with oxygen or moisture in the air and deteriorate or solidify. This tendency is prominent, for example, when polysilazane is used as the processing liquid L when forming an SOG film. In order to suppress deterioration or solidification of the processing liquid L, a method called dummy dispensing is known in which the processing liquid L is discharged into a liquid receiving section instead of the substrate W during the waiting time. However, this method may lead to an increase in manufacturing costs because the processing liquid L, which is relatively expensive, is discharged.

However, according to the above example, during the waiting time, the tip 33a of the nozzle 33 is placed in the storage recess 41a filled with an inert gas. Therefore, the area around the tip 33a is isolated from oxygen and moisture, and the reaction of the processing liquid L present in the tip 33a of the nozzle 33 is suppressed without the need for a dummy dispense. Therefore, there is no need to discard the processing liquid L, which makes it possible to reduce manufacturing costs.

According to the above example, the solvent for cleaning the tip 33a of the nozzle 33 and the inert gas for suppressing the reaction of the processing liquid L in the nozzle 33 are supplied into the storage recess 41a through the same supply flow path F1. Therefore, fewer flow paths are formed in the cleaning bath 41 compared to when the solvent flow path and the inert gas flow path are formed independently in the cleaning bath. Therefore, it is possible to reduce the size of the cleaning bath 41.

However, when the inert gas is supplied to the storage recess 41a through the same supply flow path F1 while the residual solvent is present in the supply flow path F1, even if the tip 33a arranged in the storage recess 41a functions as a lid for the storage recess 41a, the momentum of the inert gas may cause the solvent to become mist and blow out of the storage recess 41a from the gap between the tip 33a and the storage recess 41a. If such mist drifts in the atmosphere of the liquid processing unit U1 and adheres to the surface Wa of the substrate W, there is a concern that defects may occur in the processed substrate W. However, according to the above example, before the inert gas is supplied to the storage recess 41a, the solvent remaining in the supply flow path F1 is discharged to the outside through the supply flow paths F1, F3 and the discharge flow path F6. Therefore, the supply of the inert gas to the supply flow path F1 suppresses the situation in which the residual solvent becomes mist and the mist spreads outside the storage recess 41a. Therefore, the mist is suppressed from adhering to the substrate W, and the processing quality of the substrate W can be improved.

According to the above example, the working fluid is circulated through the discharge flow path F6, and the discharge flow path F6 is depressurized by the Venturi effect, thereby sucking and discharging the residual solvent from the supply flow path F1. Therefore, by utilizing the Venturi effect, it is possible to easily discharge the residual solvent from the supply flow path F1 with a simple configuration.

According to the above example, when the inert gas is supplied into the storage recess 41a, the storage recess 41a is exhausted through the exhaust flow path F4. Therefore, the residual solvent is forcibly exhausted through the exhaust flow path F4. This makes it possible to further prevent the mist from spreading outside the storage recess 41a.

According to the above example, the supply of the inert gas and the exhaust from the storage recess 41a are performed at approximately the same time. Therefore, in the storage recess 41a, an airflow from the supply flow path F1 toward the exhaust flow path F4 is more likely to occur than an airflow from the supply flow path F1 toward the opening of the storage recess 41a. Therefore, the residual solvent is more likely to be exhausted through the exhaust flow path F4. Therefore, it is possible to further suppress the situation in which the mist resulting from the residual solvent spreads outside the storage recess 41a.

In the above example, the opening of the exhaust flow path F4 in the storage recess 41a is located below the opening of the supply flow path F1 in the storage recess 41a. Therefore, the airflow generated in the storage recess 41a flows from the supply flow path F1 toward the exhaust flow path F4 located on the opposite side of the opening of the storage recess 41a. Therefore, the residual solvent is less likely to flow toward the opening of the storage recess 41a. As a result, it is possible to further suppress the situation in which the mist resulting from the residual solvent spreads outside the storage recess 41a.

According to the above example, the vicinity of the opening of the storage recess 41a and the vicinity of the area where the supply flow paths F1, F2 and the supply flow path F3 join can be covered with the metal member 42. In this case, even if static electricity is generated in the cleaning bath 41, the static electricity is removed through the metal member 42. Therefore, it is possible to prevent the solvent or the processing liquid L in the tip 33a of the nozzle 33 from being attracted by static electricity and adhering to unexpected locations.

[Modification]
The disclosure in this specification should be considered to be illustrative and not restrictive in all respects. Various omissions, substitutions, modifications, etc. may be made to the above examples without departing from the scope of the claims and the gist thereof.

(1) In the above example, the Venturi effect was used to aspirate and discharge the residual solvent from the supply flow path F1, but the residual solvent may be aspirated from the supply flow path F1 by other methods. For example, the pressure in the supply flow path F1 may be forcibly reduced using a pump fluidly connected to the supply flow path F1. Alternatively, the residual solvent may not be aspirated from the supply flow path F1.

(2) The inert gas may be supplied to the storage recess 41a before the tip 33a of the nozzle 33 is placed in the storage recess 41a, or may be supplied substantially simultaneously with the tip 33a of the nozzle 33 being placed in the storage recess 41a.

(3) The opening of the supply flow passage F1 in the storage recess 41a may be located lower than the opening of the exhaust flow passage F4 in the storage recess 41a.

(4) The supply of the inert gas and the exhaust of the gas from the storage recess 41a do not have to be performed at approximately the same time. Alternatively, the exhaust mechanism 46 does not have to exhaust the gas from the storage recess 41a.

(5) The cleaning section 40 does not have to include a metal member 42.

(6) The flow rate of the inert gas supplied to the storage recess 41a may be set to be greater than the flow rate of the exhaust gas from the storage recess 41a.

(7) The discharge flow path F6 does not have to be connected to the supply flow path F5. In this case, a flow path branching from the middle part of the discharge flow path F6 may be connected to the supply flow path F3.

(8) If the liquid supply unit 30 includes multiple nozzles 33, multiple storage recesses 41a corresponding to these multiple nozzles 33 may be provided in one cleaning bath 41.

[test]
Here, when the tip 33a of the nozzle 33 was cleaned according to steps S11 to S16 in FIG. 8, the extent of the mist spreading outside the accommodation recess 41a was confirmed. In step S16, the supply of the inert gas to the accommodation recess 41a by the supply mechanism 44 was started 5 seconds after the tip 33a of the nozzle 33 was placed in the accommodation recess 41a. Other test conditions were as follows, and the number of particles of 0.1 μm or more present in the atmosphere of the liquid processing unit U1 after step S16 was measured using an air particle counter ("SOLAIR 1100+" manufactured by LIGHTHOUSE). In the following, the supply flow rate of the inert gas to the accommodation recess 41a by the supply mechanism 44 is simply referred to as the "supply flow rate", and the exhaust flow rate from the accommodation recess 41a by the exhaust mechanism 46 is simply referred to as the "exhaust flow rate".

Test 1
Supply flow rate: 1 liter/min
Exhaust flow rate: 0 liters/min
Test 2
Supply flow rate: 1 liter/min
Exhaust flow rate: 1 liter/min
Test 3
Supply flow rate: 1 liter/min
Exhaust flow rate: 5 liters/min

Test 4
Supply flow rate: 5 liters/min
Exhaust flow rate: 0 liters/min
Test 5
Supply flow rate: 5 liters/min
Exhaust flow rate: 1 liter/min
Test 6
Supply flow rate: 5 liters/min
Exhaust flow rate: 5 liters/min

Figure 9 shows the results of tests 1 to 6. In Figure 9, the vertical axis represents the relative particle count, with the number of particles set to 10 when the inert gas supply flow rate is 1 liter/min and the exhaust flow rate is 0 liters/min. As shown in Figure 9, it was confirmed that the number of particles decreased as the exhaust flow rate increased, both when the inert gas supply flow rate was 1 liter/min and when it was 5 liters/min. It was also confirmed that the number of particles decreased especially when the exhaust flow rate was equal to or greater than the inert gas supply flow rate, i.e., in the cases of tests 2, 3, and 6.

[Other examples]
Example 1. An example of a substrate processing method includes arranging the tip of the nozzle after supplying a processing liquid to the surface of the substrate in a storage recess of a cleaning bath, supplying a solvent into the storage recess through a supply flow path formed in the cleaning bath to reach the storage recess after arranging the tip, and supplying an inert gas into the storage recess through the supply flow path after supplying the solvent. In this case, a solvent for cleaning the tip of the nozzle and an inert gas for suppressing a reaction of the processing liquid in the nozzle are supplied into the storage recess through the same supply flow path. Therefore, the number of flow paths formed in the cleaning bath is reduced compared to when the solvent flow path and the inert gas flow path are formed independently in the cleaning bath. Therefore, it is possible to reduce the size of the cleaning bath.

Example 2. The method of Example 1 may further include aspirating the solvent from the supply flow path after supplying the solvent and before supplying the inert gas. In this case, even if the solvent remains in the supply flow path, the remaining solvent is removed from the supply flow path before the inert gas is supplied. This prevents the remaining solvent from turning into mist as the inert gas is supplied to the supply flow path, and the mist from spreading outside the accommodation recess. This prevents the mist from adhering to the substrate, thereby improving the processing quality of the substrate.

Example 3. In the method of Example 2, aspirating the solvent may include circulating the working fluid through a discharge flow path, the middle portion of which is fluidly connected to the supply flow path, and reducing the pressure in the discharge flow path, thereby aspirating and discharging the solvent from the supply flow path through the discharge flow path. In this case, the Venturi effect can be utilized to easily discharge residual solvent from the supply flow path with a simple configuration.

Example 4. In the method of Example 2 or Example 3, supplying the inert gas may include supplying the inert gas into the storage recess a predetermined time after the tip is placed in the storage recess. In this case, a sufficient time is ensured for the solvent to be sucked from the supply flow path before the inert gas is supplied to the tip of the nozzle. As a result, the solvent remaining in the storage recess is also sucked through the supply flow path within the ensured time. Therefore, the amount of solvent remaining in the storage recess when the inert gas is supplied is reduced. Therefore, it is possible to further suppress the generation of mist resulting from the remaining solvent.

Example 5. Any of the methods of Examples 1 to 4 may further include exhausting the inert gas from the storage recess through an exhaust passage fluidly connected to the storage recess while the inert gas is being supplied into the storage recess. In this case, the residual solvent is forcibly exhausted through the exhaust passage. This makes it possible to further suppress the mist from spreading outside the storage recess.

Example 6. In the method of Example 5, the supply of the inert gas and the exhaust of the gas from the storage recess may be performed at approximately the same time. In this case, an airflow from the supply flow path toward the exhaust flow path is more likely to occur in the storage recess than an airflow from the supply flow path toward the opening of the storage recess, making it easier to exhaust the residual solvent through the exhaust flow path. This makes it possible to further suppress the mist resulting from the residual solvent from spreading outside the storage recess.

Example 7. In the method of Example 5 or Example 6, the opening of the exhaust flow passage in the storage recess may be located below the opening of the supply flow passage in the storage recess. In this case, the airflow generated in the storage recess flows from the supply flow passage toward the exhaust flow passage located on the opposite side of the opening of the storage recess. This makes it difficult for the residual solvent to flow toward the opening of the storage recess. This makes it possible to further suppress the situation in which the mist resulting from the residual solvent spreads outside the storage recess.

Example 8. In any of the methods of Examples 5 to 7, the exhaust flow rate from the storage recess may be set to be equal to or greater than the supply flow rate of the inert gas to the storage recess. In this case, the residual solvent is more likely to flow toward the exhaust flow path. This makes it possible to further prevent the mist resulting from the residual solvent from spreading outside the storage recess.

Example 9. In the method of Example 8, the exhaust flow rate from the storage recess may be 1 L/min to 5 L/min. In this case, it is possible to prevent the mist resulting from the residual solvent from spreading outward, while preventing outside air from entering the storage recess through the opening of the storage recess by exhausting through the exhaust flow path.

Example 10. In any of the methods of Examples 1 to 9, the vicinity of the opening of the storage recess or the vicinity of the area where the solvent and the inert gas meet in the supply flow path may be covered with a metal member. In this case, even if static electricity is generated in the cleaning bath, the static electricity is removed through the metal member. Therefore, it is possible to prevent the solvent or the processing liquid in the nozzle from being attracted to the static electricity and adhering to unexpected locations.

Example 11. An example of a substrate processing apparatus includes a nozzle configured to supply a processing liquid to the surface of a substrate, a cleaning bath formed with a storage recess capable of accommodating the tip of the nozzle and a supply flow path extending to the storage recess, a drive unit configured to move the nozzle between above the substrate and the cleaning bath, a solvent supply unit configured to supply a solvent into the storage recess through the supply flow path, and a gas supply unit configured to supply an inert gas into the storage recess through the supply flow path. In this case, the same effect as the method of Example 1 can be obtained.

Example 12. The device of Example 11 may further include a suction unit configured to suck the solvent remaining in the supply flow path. In this case, the same effect as that of the method of Example 2 can be obtained.

Example 13. In the device of Example 12, the suction unit may include a discharge flow path whose middle portion is fluidly connected to the supply flow path, and a fluid supply unit configured to circulate the working fluid through the discharge flow path and reduce the pressure in the supply flow path. In this case, the same effect as that of the method of Example 3 can be obtained.

Example 14. In the device of Example 12 or Example 13, the gas supply unit may be configured to supply the inert gas into the storage recess a predetermined time after the tip portion is placed in the storage recess. In this case, the same effect as the method of Example 4 can be obtained.

Example 15. Any of the devices of Examples 11 to 14 may further include an exhaust unit configured to exhaust gas from the accommodating recess through an exhaust passage fluidly connected to the accommodating recess when the inert gas is being supplied into the accommodating recess by the gas supply unit. In this case, the same effect as that of the method of Example 5 can be obtained.

Example 16. In the apparatus of Example 15, the gas supply unit and the exhaust unit may be configured to supply the inert gas into the storage recess and exhaust the gas from the storage recess at approximately the same time. In this case, the same effect as the method of Example 6 can be obtained.

Example 17. In the device of Example 15 or Example 16, the opening of the exhaust passage in the storage recess may be located lower than the opening of the supply passage in the storage recess. In this case, the same effect as the method of Example 7 can be obtained.

Example 18. In any of the devices of Examples 15 to 17, the exhaust flow rate from the storage recess by the exhaust unit may be set to be equal to or greater than the supply flow rate of the inert gas to the storage recess by the gas supply unit. In this case, the same effect as the method of Example 8 can be obtained.

Example 19. In the device of Example 18, the exhaust flow rate from the storage recess may be 1 L/min to 5 L/min. In this case, the same effect as the method of Example 9 can be obtained.

Example 20. Any of the devices of Examples 11 to 19 may further include a metal member configured to cover the vicinity of the opening of the storage recess or the vicinity of the area where the solvent and the inert gas meet in the supply flow path. In this case, the same effect as the method of Example 10 can be obtained.

Example 21. A computer-readable recording medium may record a program for causing a substrate processing apparatus to execute the methods of Examples 1 to 10. In this case, the same effect as the method of Example 1 can be obtained. In this specification, a computer-readable storage medium may include a non-transitory computer recording medium (e.g., various primary or secondary storage devices) or a transitory computer recording medium (e.g., a data signal that can be provided via a network).

1...substrate processing system, 2...coating and developing apparatus (substrate processing apparatus), 30...liquid supply section, 32...driving mechanism (driving section), 33...nozzle, 33a...tip section, 40...cleaning section, 41...cleaning bath, 41a...accommodation recess, 41b...drain (wastewater flow path), 42...metal member, 43...supply mechanism (solvent supply section), 44...supply mechanism (gas supply section), 45...suction mechanism (suction section), 46...exhaust mechanism (exhaust section), Ctr...controller (control section), F1-F3, F5...supply flow paths, F4...exhaust flow path, F6...exhaust flow path, L...processing liquid, RM...recording medium, U1...liquid processing unit, W...substrate, Wa...surface.

Claims (21)

disposing a tip of the nozzle after supplying the processing liquid onto the surface of the substrate within a recess of the cleaning bath;
After disposing the tip portion, supplying a solvent into the containing recess through a supply passage formed in the cleaning bath so as to reach the containing recess;
supplying an inert gas into the accommodation recess through the supply passage after supplying the solvent. The method of claim 1, further comprising aspirating the solvent from the supply line after delivering the solvent and before delivering the inert gas. The method according to claim 2, wherein sucking the solvent includes circulating a working fluid through a discharge flow passage, the middle portion of which is fluidly connected to the supply flow passage, to reduce pressure in the supply flow passage, thereby sucking and discharging the solvent from the supply flow passage through the discharge flow passage. The method according to claim 2 or 3, wherein supplying the inert gas includes supplying the inert gas into the receiving recess a predetermined time after the tip is placed in the receiving recess. The method according to any one of claims 1 to 4, further comprising exhausting the inert gas from the accommodating recess through an exhaust passage fluidly connected to the accommodating recess while the inert gas is being supplied into the accommodating recess. The method according to claim 5, wherein the supply of the inert gas and the exhaust of the gas from the storage recess are performed at approximately the same time. The method according to claim 5 or 6, wherein the opening of the exhaust passage in the storage recess is located below the opening of the supply passage in the storage recess. The method according to any one of claims 5 to 7, wherein the exhaust flow rate from the storage recess is set to be equal to or greater than the supply flow rate of the inert gas to the storage recess. The method according to claim 8, wherein the exhaust flow rate from the storage recess is 1 liter/min to 5 liters/min. The method according to any one of claims 1 to 9, wherein the vicinity of the opening of the storage recess or the vicinity of the region where the solvent and the inert gas meet in the supply flow path is covered with a metal member. a nozzle configured to supply a processing fluid to a surface of the substrate;
a cleaning bath including a recess capable of receiving the tip of the nozzle and a supply flow path extending to the recess;
a drive configured to move the nozzle between above the substrate and the cleaning bath;
a solvent supply unit configured to supply a solvent into the accommodating recess through the supply flow path;
a gas supply unit configured to supply an inert gas into the accommodation recess through the supply passage. The device according to claim 11, further comprising a suction unit configured to suction the solvent remaining in the supply flow path. The suction unit is
a discharge channel whose middle portion is fluidly connected to the supply channel;
and a fluid supply configured to pass a working fluid through the exhaust passage to reduce a pressure in the supply passage. The apparatus according to claim 12 or 13, wherein the gas supply unit is configured to supply the inert gas into the receiving recess a predetermined time after the tip portion is placed in the receiving recess. The apparatus according to any one of claims 11 to 14, further comprising an exhaust unit configured to exhaust the inert gas from the accommodating recess through an exhaust passage fluidly connected to the accommodating recess when the inert gas is supplied into the accommodating recess by the gas supply unit. The apparatus according to claim 15, wherein the gas supply unit and the exhaust unit are configured to supply the inert gas into the storage recess and exhaust the gas from the storage recess at substantially the same time. The device according to claim 15 or 16, wherein the opening of the exhaust passage in the storage recess is located below the opening of the supply passage in the storage recess. The device according to any one of claims 15 to 17, wherein the exhaust flow rate from the storage recess by the exhaust unit is set to be equal to or greater than the supply flow rate of the inert gas to the storage recess by the gas supply unit. The device according to claim 18, wherein the exhaust flow rate from the storage recess is 1 liter/min to 5 liters/min. The device according to any one of claims 11 to 19, further comprising a metal member configured to cover the vicinity of the opening of the storage recess or the vicinity of the area where the solvent and the inert gas meet in the supply flow path. A computer-readable recording medium having recorded thereon a program for causing a substrate processing apparatus to execute the method according to any one of claims 1 to 10.

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