JP7426958B2 - Magnetic sensor and inspection equipment - Google Patents

Description

Embodiments of the present invention relate to magnetic sensors and inspection devices.

There is a magnetic sensor using a magnetic layer. There is an inspection device that uses a magnetic sensor. It is desired to improve the sensitivity of magnetic sensors.

JP 2018-155719 Publication

Embodiments of the present invention provide a magnetic sensor and inspection device with improved sensitivity.

According to an embodiment of the invention, a magnetic sensor includes a first sensor portion and a conductive member. The first sensor section includes a first magnetic element, a first side magnetic section, and a first opposing side magnetic section. The conductive member includes a first corresponding portion along the first magnetic element. The first magnetic element includes a first magnetic layer and a first opposing magnetic layer, wherein the direction from the first magnetic layer to the first opposing magnetic layer is along a first direction. and a first intermediate magnetic layer provided between the first magnetic layer and the first opposing magnetic layer. The first side magnetic section includes a first side magnetic layer. The first opposing side magnetic section includes a first opposing side magnetic layer. The first intermediate magnetic layer is located between the first side magnetic layer and the first opposing side magnetic layer in a second direction intersecting the first direction.

FIGS. 1(a) to 1(c) are schematic diagrams illustrating the magnetic sensor according to the first embodiment. FIG. 2 is a schematic diagram illustrating the magnetic sensor according to the first embodiment. 3(a) to 3(c) are schematic diagrams illustrating the magnetic sensor according to the first embodiment. FIG. 4 is a schematic diagram illustrating the magnetic sensor according to the first embodiment. FIGS. 5(a) to 5(c) are schematic diagrams illustrating a magnetic sensor according to the second embodiment. FIGS. 6(a) to 6(c) are schematic diagrams illustrating a magnetic sensor according to the second embodiment. FIGS. 7A and 7B are schematic diagrams illustrating characteristics of the magnetic sensor according to the embodiment. FIGS. 8(a) and 8(b) are schematic diagrams illustrating the characteristics of the magnetic sensor according to the embodiment. FIGS. 9(a) to 9(c) are graphs illustrating the characteristics of the magnetic sensor according to the embodiment. FIG. 10 is a schematic diagram illustrating a magnetic sensor according to the third embodiment. FIG. 11 is a schematic diagram illustrating a magnetic sensor according to the third embodiment. FIGS. 12(a) to 12(c) are schematic cross-sectional views illustrating the magnetic sensor according to the third embodiment. FIGS. 13(a) to 13(c) are schematic plan views illustrating the magnetic sensor according to the third embodiment. FIGS. 14(a) to 14(c) are schematic diagrams illustrating a magnetic sensor according to the third embodiment. 15(a) and 15(b) are schematic diagrams illustrating a magnetic sensor according to a third embodiment. FIGS. 16(a) and 16(b) are schematic diagrams illustrating a magnetic sensor according to a third embodiment. FIG. 17 is a schematic diagram illustrating an inspection apparatus according to the fourth embodiment. FIG. 18 is a schematic diagram illustrating an inspection apparatus according to the fourth embodiment. FIG. 19 is a schematic perspective view showing an inspection device according to the fourth embodiment. FIG. 20 is a schematic plan view showing an inspection device according to the fourth embodiment. FIG. 21 is a schematic diagram showing a magnetic sensor and an inspection device according to the fourth embodiment. FIG. 22 is a schematic diagram showing an inspection device according to the fourth embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as the reality. Even when the same part is shown, the dimensions and ratios may be shown differently depending on the drawing.
In the specification of this application and each figure, the same elements as those described above with respect to the existing figures are given the same reference numerals, and detailed explanations are omitted as appropriate.

(First embodiment)
FIGS. 1(a) to 1(c) are schematic diagrams illustrating the magnetic sensor according to the first embodiment. FIG. 1(a) is a plan view. FIG. 1(b) is a sectional view taken along the line Y1-Y2 in FIG. 1(a). FIG. 1(c) is a cross-sectional view taken along the line X1-X2 in FIG. 1(a).

As shown in FIGS. 1(a) to 1(c), the magnetic sensor 110 according to the embodiment includes a first sensor section 10A.

The first sensor section 10A includes a first magnetic element 11E, a first side magnetic section 11S, and a first opposing side magnetic section 11SA.

As shown in FIGS. 1(b) and 1(c), the first magnetic element 11E includes a first magnetic layer 11, a first opposing magnetic layer 11o, and a first intermediate magnetic layer 11i. The direction from the first magnetic layer 11 to the first opposing magnetic layer 11o is along the first direction.

The first direction is the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the Y-axis direction. The direction perpendicular to the Z-axis direction and the Y-axis direction is defined as the X-axis direction.

The first intermediate magnetic layer 11i is provided between the first magnetic layer 11 and the first opposing magnetic layer 11o.

In this example, the first magnetic element 11E includes a first nonmagnetic layer 11n and a first intermediate nonmagnetic layer 11in. The first nonmagnetic layer 11n is provided between the first magnetic layer 11 and the first intermediate magnetic layer 11i. The first intermediate nonmagnetic layer 11in is provided between the first intermediate magnetic layer 11i and the first opposing magnetic layer 11o.

At least one of the first magnetic layer 11, the first opposing magnetic layer 11o, and the first intermediate magnetic layer 11i includes, for example, at least one selected from the group consisting of Co, Fe, and Ni. These magnetic layers include, for example, at least one selected from the group consisting of CoFe, CoFeNi, and NiFe. These magnetic layers are, for example, ferromagnetic layers.

The first intermediate nonmagnetic layer 11in contains, for example, Ru. For example, the first intermediate magnetic layer 11i and the first opposing magnetic layer 11o are antiferromagnetically coupled, for example.

In one example, the first nonmagnetic layer 11n is electrically conductive. The first nonmagnetic layer 11n includes, for example, at least one selected from the group consisting of Cu, Au, and Ag. For example, the first nonmagnetic layer 11n is a Cu layer. The first magnetic element 11E is, for example, a GMR (Giant magnetic resistance) element.

In another example, the first nonmagnetic layer 11n is insulating. The first nonmagnetic layer 11n contains, for example, MgO. In this case, the first magnetic element 11E is, for example, a TMR (Tunnel Magneto Resistance) element.

As shown in FIG. 1(b), the first side magnetic section 11S includes a first side magnetic layer 11s. The first opposing side magnetic section 11SA includes a first opposing side magnetic layer 11os. The first intermediate magnetic layer 11i is located between the first side magnetic layer 11s and the first opposing side magnetic layer 11os in a second direction intersecting the first direction. The second direction is, for example, the Y-axis direction.

In this example, the first side magnetic section 11S further includes a first laminated side magnetic layer 11ss. The first opposing side magnetic section 11SA further includes a first opposing laminated side magnetic layer 11oss. The first opposing magnetic layer 11o is located between the first stacked side magnetic layer 11ss and the first opposing stacked side magnetic layer 11oss in the second direction (for example, the Y-axis direction).

For example, the magnetization of the first intermediate magnetic layer 11i is made uniform by the first side magnetic layer 11s and the first opposing side magnetic layer 11os. The magnetization of the first intermediate magnetic layer 11i is stabilized. For example, the magnetization of the end portion of the first intermediate magnetic layer 11i in the Y-axis direction is made uniform by the first side magnetic layer 11s and the first opposing side magnetic layer 11os. By stabilizing the magnetization of the first intermediate magnetic layer 11i, the sensitivity of the magnetic sensor is improved.

For example, the magnetization of the first opposing magnetic layer 11o is made uniform by the first stacked side magnetic layer 11ss and the first opposing stacked side magnetic layer 11oss. The magnetization of the first opposing magnetic layer 11o is stabilized. For example, the magnetization of the end portion of the first opposing magnetic layer 11o in the Y-axis direction is made uniform by the first stacked side magnetic layer 11ss and the first opposing stacked side magnetic layer 11oss. For example, by stabilizing the magnetization of the first opposing magnetic layer 11o, the magnetization of the first intermediate magnetic layer 11i becomes more stable. According to the embodiment, a magnetic sensor with improved sensitivity can be provided.

As shown in FIG. 1(b), the first side magnetic section 11S may further include a first side nonmagnetic layer 11sn. The first side nonmagnetic layer 11sn is provided between the first side magnetic layer 11s and the first laminated side magnetic layer 11ss. As shown in FIG. 1(b), the first opposing side magnetic section 11SA may further include a first opposing side nonmagnetic layer 11osn. The first opposing side nonmagnetic layer 11osn is provided between the first opposing side magnetic layer 11os and the first opposing laminated side magnetic layer 11oss. For example, the first side nonmagnetic layer 11sn and the first opposing side nonmagnetic layer 11osn include the material included in the first intermediate nonmagnetic layer 11in.

An insulating member 65 may be provided around the first magnetic element 11E, the first side magnetic section 11S, and the first opposing side magnetic section 11SA.

In the embodiment, a portion of the insulating member 65 is located between the first side magnetic layer 11s and the first laminated side magnetic layer 11ss, and between the first opposing side magnetic layer 11os and the first opposing laminated side magnetic layer 11oss. It may be provided in between.

As shown in FIG. 1(a), the length of the first magnetic element 11E along the second direction (Y-axis direction) is defined as a first length L1. The first magnetic element 11E includes a first end 11Ee and a first other end 11Ef. The direction from the first end 11Ee to the first other end 11Ef is along the second direction (for example, the Y-axis direction). The first end 11Ee and the first other end 11Ef correspond to two ends of the first magnetic element 11E in the Y-axis direction.

As shown in FIG. 1(a), the length of the first magnetic element 11E along the third direction is defined as a first width w1. The third direction is a direction that intersects a plane that includes the first direction and the second direction. The third direction is, for example, the X-axis direction. In embodiments, the first length L1 exceeds the first width w1. For example, the magnetization of the magnetic layer included in the first magnetic element 11E is, for example, along the Y-axis direction. For example, the first length L1 is greater than or equal to 10 times and less than or equal to 100 times the first width w1.

For example, the magnetization of the first opposing magnetic layer 11o has one of the first direction and the second direction. For example, the magnetization of the first intermediate magnetic layer 11i has the other of the first direction and the second direction. The first direction is from the first end 11Ee to the first other end 11Ef. The second direction is a direction from the first other end 11Ef to the first end 11Ee.

The magnetization of the first side magnetic layer 11s and the magnetization of the first opposing side magnetic layer 11os are, for example, the same as the magnetization direction of the first intermediate magnetic layer 11i. The magnetization of the first laminated side magnetic layer 11ss and the magnetization of the first opposing laminated side magnetic layer 11oss are, for example, the same as the magnetization direction of the first opposing magnetic layer 11o.

As shown in FIG. 1(b), the length of the first magnetic element 11E along the first direction (Z-axis direction) is defined as a first thickness t1. The first length L1 exceeds the first thickness t1.

As shown in FIG. 1(b), the distance along the second direction (Y-axis direction) between the first side magnetic portion 11S and the first magnetic element 11E is defined as a distance g1. The distance g1 is, for example, 0.01 times or less the first length L1. When the distance g1 is 0.01 times or less than the first length L1, for example, the magnetization of the magnetic layer included in the first magnetic element 11E can be effectively stabilized by the first side magnetic portion 11S. . When the distance g1 is 0.001 times or more the first length L1, electrical insulation between the first side magnetic portion 11S and the first magnetic element 11E is stabilized.

As shown in FIG. 1(b), the distance along the second direction (Y-axis direction) between the first opposing side magnetic portion 11SA and the first magnetic element 11E is defined as a distance g2. The distance g2 is, for example, 0.01 times or less the first length L1. When the distance g2 is 0.01 times or less than the first length L1, for example, the magnetization of the magnetic layer included in the first magnetic element 11E can be effectively stabilized by the first opposing side magnetic portion 11SA. It will be done. When the distance g2 is 0.001 times or more the first length L1, electrical insulation between the first opposing side magnetic portion 11SA and the first magnetic element 11E is stabilized.

As shown in FIGS. 1(a) and 1(c), in this example, the first sensor section 10A further includes a first magnetic member 51 and a first opposing magnetic member 51A. The direction from the first magnetic member 51 to the first opposing magnetic member 51A is along the third direction. The third direction intersects a plane including the first direction and the second direction. The third direction is, for example, the X-axis direction.

As shown in FIG. 1C, the first magnetic element 11E overlaps the region 66a between the first magnetic member 51 and the first opposing magnetic member 51A in the first direction (Z-axis direction). The region 66a may be a part of the insulating member 65, for example.

As shown in FIG. 1C, for example, a portion of the first magnetic element 11E overlaps a portion of the first magnetic member 51 in the first direction (Z-axis direction). Another part of the first magnetic element 11E overlaps with a part of the first opposing magnetic member 51A in the first direction.

The magnetic field to be detected is collected by the first magnetic member 51 and the first opposing magnetic member 51A. The collected magnetic field is efficiently applied to the first magnetic element 11E. This results in higher sensitivity. The first magnetic member 51 and the first opposing magnetic member 51A function as, for example, an MFC (Magnetic Field Concentrator).

FIG. 2 is a schematic diagram illustrating the magnetic sensor according to the first embodiment.
As shown in FIG. 2, the magnetic sensor 110a may include an element current circuit 75. The element current circuit 75 can supply the element current Id to the first magnetic element 11E. For example, the element current circuit 75 can supply the element current Id between the first end 11Ee and the first other end 11Ef of the first magnetic element 11E. The element current circuit 75 is included in the circuit section 70, for example. The circuit unit 70 may be able to detect the electrical resistance of the first magnetic element 11E based on the element current Id. The electrical resistance of the first magnetic element 11E changes depending on the magnetic field to be detected. For example, the direction of magnetization of the first magnetic layer 11 changes depending on the magnetic field to be detected. For example, the first magnetic layer 11 is a magnetization free layer.

3(a) to 3(c) are schematic diagrams illustrating the magnetic sensor according to the first embodiment. FIG. 3(a) is a plan view. FIG. 3(b) is a sectional view taken along the line Y1-Y2 in FIG. 3(a). FIG. 3(c) is a sectional view taken along the line X1-X2 in FIG. 3(a).

As shown in FIGS. 3(a) and 3(c), the magnetic sensor 110a according to the embodiment includes a conductive member 20. The configuration of the magnetic sensor 110a except for this may be the same as the configuration of the magnetic sensor 110.

In the magnetic sensor 110a, the conductive member 20 includes a first corresponding portion 21. The first corresponding portion 21 is along the first magnetic element 11E. For example, the first corresponding portion 21 overlaps with the first magnetic element 11E in a direction intersecting the second direction (Y-axis direction). For example, the first corresponding portion 21 overlaps with the first magnetic element 11E in the Z-axis direction. The positions of the first magnetic element 11E, first corresponding portion 21, first magnetic member 51, and first opposing magnetic member 51A in the Z-axis direction are arbitrary. A magnetic field (current magnetic field) based on the current supplied to the first corresponding part 21 is applied to the first magnetic element 11E. As will be described later, by using an alternating current magnetic field, noise can be suppressed and detection with higher sensitivity becomes possible.

FIG. 4 is a schematic diagram illustrating the magnetic sensor according to the first embodiment.
As shown in FIG. 4, as already described, the first magnetic element 11E includes the first end 11Ee and the first other end 11Ef. The direction from the first end 11Ee to the first other end 11Ef is along the second direction (Y-axis direction). The first corresponding portion 21 includes a first portion 21e and a first other portion 21f. The first portion 21e corresponds to the first end 11Ee. The first other portion 21f corresponds to the first other end portion 11Ef. For example, the first portion 21e overlaps the first end portion 11Ee in the first direction (Z-axis direction). For example, the first other portion 21f overlaps the first other end portion 11Ef in the first direction.

The magnetic sensor 110a may include an element current circuit 75 and a first current circuit 71. As already explained, the element current circuit 75 can supply the element current Id between the first end 11Ee and the first other end 11Ef of the first magnetic element 11E. The first current circuit 71 is capable of supplying the first corresponding section 21 with a first current I1 including an alternating current component. The first current circuit 71 can supply the first current I1 between the first portion 21e and the first other portion 21f. The first current circuit 71 may be included in the circuit section 70. An example of detection using the first current I1 including an alternating current component will be described later.

(Second embodiment)
FIGS. 5(a) to 5(c) are schematic diagrams illustrating a magnetic sensor according to the second embodiment. FIG. 5(a) is a plan view. FIG. 5(b) is a sectional view taken along the line Y1-Y2 in FIG. 5(a). FIG. 5(c) is a sectional view taken along the line X1-X2 in FIG. 5(a).

As shown in FIGS. 5(a) to 5(c), the magnetic sensor 111 according to the embodiment includes a sensor section 10A.

As shown in FIGS. 5A and 5B, in the magnetic sensor 111, the first sensor section 10A includes a first magnetic element 11E, a first laminated magnetic layer 11sL, and a first opposing laminated magnetic layer 11osL. including. The first laminated magnetic layer 11sL and the first opposing laminated magnetic layer 11osL include, for example, at least one selected from the group consisting of IrMn and PtMn.

The first magnetic element 11E includes a first magnetic layer 11, a first opposing magnetic layer 11o, a first intermediate magnetic layer 11i, a first nonmagnetic layer 11n, and a first intermediate nonmagnetic layer 11in. The direction from the first magnetic layer 11 to the first opposing magnetic layer 11o is along the first direction (Z-axis direction). The first intermediate magnetic layer 11i is provided between the first magnetic layer 11 and the first opposing magnetic layer 11o. The first nonmagnetic layer 11n is provided between the first magnetic layer 11 and the first intermediate magnetic layer 11i. The first intermediate nonmagnetic layer 11in is provided between the first intermediate magnetic layer 11i and the first opposing magnetic layer 11o.

The direction from the first stacked magnetic layer 11sL to the first opposing stacked magnetic layer 11osL is along a second direction that intersects the first direction. The second direction is, for example, the Y-axis direction. A portion 11op of the first opposing magnetic layer 11o is located between the first magnetic layer 11 and the first laminated magnetic layer 11sL. For example, a portion 11op of the first opposing magnetic layer 11o is located between the first intermediate nonmagnetic layer 11in and the first laminated magnetic layer 11sL. The other portion 11oq of the first opposing magnetic layer 11o is located between the first magnetic layer 11 and the first opposing laminated magnetic layer 11osL. For example, the other portion 11oq of the first opposing magnetic layer 11o is located between the first intermediate nonmagnetic layer 11in and the first opposing laminated magnetic layer 11osL.

For example, the magnetization of the first opposing magnetic layer 11o becomes uniform due to the first stacked magnetic layer 11sL and the first opposing stacked magnetic layer 11osL. The first stacked magnetic layer 11sL and the first opposing stacked magnetic layer 11osL control, for example, the magnetization at the end of the first opposing magnetic layer 11o in the Y-axis direction. By making the magnetization of the first opposing magnetic layer 11o uniform, for example, the magnetization of the first intermediate magnetic layer 11i is made uniform. A magnetic sensor with improved sensitivity can be provided.

For example, the first laminated magnetic layer 11sL may be in contact with a portion 11op of the first opposing magnetic layer 11o. Alternatively, the distance along the first direction (Z-axis direction) between the part 11op of the first opposing magnetic layer 11o and the first laminated magnetic layer 11sL is, for example, 0.000 mm of the thickness of the first opposing magnetic layer 11o. It is 1 times or less. The thickness of the first opposing magnetic layer 11o is the length of the first opposing magnetic layer 11o along the first direction (Z-axis direction). For example, the first opposing laminated magnetic layer 11osL is in contact with the other portion 11oq of the first opposing magnetic layer 11o. Alternatively, the distance along the first direction between the other portion 11oq of the first opposing magnetic layer 11o and the first opposing laminated magnetic layer 11osL is 0.1 times or less the thickness of the first opposing magnetic layer 11o. Thereby, the magnetization of the first opposing magnetic layer 11o is easily stabilized by the first stacked magnetic layer 11sL and the first opposing stacked magnetic layer 11osL.

As shown in FIG. 5A, the length of the first laminated magnetic layer 11sL along the second direction (Y-axis direction) is defined as length La1. The length La1 is, for example, not less than 0.01 times and not more than 0.1 times the length (first length L1) of the first magnetic element 11E along the second direction. The length of the first opposing laminated magnetic layer 11osL along the second direction is defined as length Lb1. The length Lb1 is, for example, 0.01 times or more and 0.1 times or less the length (first length L1) of the first magnetic element 11E along the second direction. With such length La1 and length Lb1, for example, the magnetization of the first opposing magnetic layer 11o is well controlled.

The configuration and materials of the magnetic sensor 110 described above can be applied to the magnetic sensor 111. For example, in the magnetic sensor 111, the first magnetic member 51 and the first opposing magnetic member 51A may be provided. As described below, in the second embodiment, the conductive member 20 described in relation to the magnetic sensor 110a may be provided.

FIGS. 6(a) to 6(c) are schematic diagrams illustrating a magnetic sensor according to the second embodiment. FIG. 6(a) is a plan view. FIG. 6(b) is a sectional view taken along the line Y1-Y2 in FIG. 6(a). FIG. 6(c) is a sectional view taken along the line X1-X2 in FIG. 6(a).

As shown in FIGS. 6A and 6C, the magnetic sensor 111a according to the embodiment includes a conductive member 20. The configuration of the magnetic sensor 111a except for this may be the same as the configuration of the magnetic sensor 111.

In the magnetic sensor 111a, the conductive member 20 includes a first corresponding portion 21. The first corresponding portion 21 is along the first magnetic element 11E. For example, the first corresponding portion 21 overlaps with the first magnetic element 11E in a direction intersecting the second direction (Y-axis direction). For example, the first corresponding portion 21 overlaps the first magnetic element 11E in the Z-axis direction. The positions of the first magnetic element 11E, first corresponding portion 21, first magnetic member 51, and first opposing magnetic member 51A in the Z-axis direction are arbitrary. A magnetic field (current magnetic field) based on the current supplied to the first corresponding part 21 is applied to the first magnetic element 11E. As will be described later, for example, by using an alternating current magnetic field, noise can be suppressed and detection with higher sensitivity becomes possible.

The magnetic sensor 111a may also be provided with an element current circuit 75 and a first current circuit 71 (see FIG. 4). As already explained, the element current circuit 75 can supply the element current Id between the first end 11Ee and the first other end 11Ef of the first magnetic element 11E. The first current circuit 71 is capable of supplying the first corresponding section 21 with a first current I1 including an alternating current component. The first current circuit 71 can supply the first current I1 between the first portion 21e and the first other portion 21f. As explained below, the electrical resistance of the first magnetic element 11E has an even function characteristic. The even-function electric resistance and the first current I1 including an alternating current component enable detection with suppressed noise.

Hereinafter, an example of the characteristics of the first magnetic element 11E will be described. The following description can be applied to the magnetic sensors according to the first embodiment and the second embodiment.
FIGS. 7A and 7B are schematic diagrams illustrating characteristics of the magnetic sensor according to the embodiment.
The horizontal axis of these figures corresponds to the value of the current (for example, the first current I1) flowing through the conductive member 20 (for example, the first corresponding part 21). The vertical axis is the electrical resistance Rx of the first magnetic element 11E. As shown in FIGS. 7A and 7B, in the embodiment, the electrical resistance Rx exhibits an even function characteristic with respect to changes in the current (first current I1).

For example, the electrical resistance Rx of the first magnetic element 11E is the first value R1 when the first value current Ia1 is supplied to the first corresponding part 21. The electrical resistance Rx is the second value R2 when the second value current Ia2 is supplied to the first corresponding part 21. The electrical resistance Rx is the third value R3 when the third value current Ia3 is supplied to the first corresponding section 21. The absolute value of the first value current Ia1 is smaller than the absolute value of the second value current Ia2, and smaller than the absolute value of the third value current Ia3. The first value current Ia1 may be substantially zero, for example. The direction of the second value current Ia2 is opposite to the direction of the third value current Ia3.

In the example of FIG. 7(a), the first value R1 is lower than the second value R2 and lower than the third value R3. In the example of FIG. 7(b), the first value R1 is higher than the second value R2 and higher than the third value R3.

For example, when no current flows through the first corresponding part 21, the electrical resistance Rx is the fourth value R4. For example, the first value R1 is substantially the same as the fourth value R4 when no current flows. For example, the ratio of the absolute value of the difference between the first value R1 and the fourth value R4 to the fourth value R4 is 0.01 or less. The ratio may be 0.001 or less. A substantially even function characteristic is obtained for positive and negative currents.

Such a relationship between the first current I1 and the electrical resistance Rx is such that when a magnetic field due to the first current I1 is applied to the first magnetic element 11E, the electrical resistance Rx of the first magnetic element 11E changes depending on the strength of the magnetic field. based on changes in

The electrical resistance Rx when an external magnetic field is applied to the first magnetic element 11E also exhibits an even function characteristic as in the example shown in FIG. 7(a) or FIG. 7(b). The external magnetic field includes, for example, a component along the X-axis direction.

FIGS. 8(a) and 8(b) are schematic diagrams illustrating the characteristics of the magnetic sensor according to the embodiment.
The horizontal axis in these figures is the intensity of the external magnetic field Hex applied to the first magnetic element 11E. The vertical axis is the electrical resistance Rx of the first magnetic element 11E. These figures correspond to RH characteristics. As shown in FIGS. 8A and 8B, the electrical resistance Rx has a characteristic of being an even function with respect to the external magnetic field Hex applied to the first magnetic element 11E. The external magnetic field Hex includes, for example, a component in the X-axis direction.

As shown in FIGS. 8A and 8B, the electrical resistance Rx of the first magnetic element 11E is a first value R1 when the first magnetic field Hex1 is applied to the first magnetic element 11E. The electrical resistance Rx is the second value R2 when the second magnetic field Hex2 is applied to the first magnetic element 11E. The electrical resistance Rx is the third value R3 when the third magnetic field Hex3 is applied to the first magnetic element 11E. The absolute value of the first magnetic field Hex1 is smaller than the absolute value of the second magnetic field Hex2, and smaller than the absolute value of the third magnetic field Hex3. The direction of the second magnetic field Hex2 is opposite to the direction of the third magnetic field Hex3.

In the example of FIG. 8A, the first value R1 is lower than the second value R2 and lower than the third value R3. In the example of FIG. 8(b), the first value R1 is higher than the second value R2 and higher than the third value R3. For example, when no external magnetic field is applied to the first magnetic element 11E, the electrical resistance Rx is the fourth value R4. The first value R1 is substantially the same as the fourth value R4 when no external magnetic field is applied. For example, the ratio of the absolute value of the difference between the first value R1 and the fourth value R4 to the fourth value R4 is 0.01 or less. The ratio may be 0.001 or less. Substantially even function characteristics are obtained for positive and negative external magnetic fields.

Utilizing the characteristics of such an even function, highly sensitive detection is possible as described below.
An example in which the first current I1 is an alternating current and does not substantially contain a direct current component will be described below. A first current I1 (alternating current) is supplied to the first corresponding portion 21, and an alternating magnetic field due to the alternating current is applied to the first magnetic element 11E. An example of the change in electrical resistance Rx at this time will be explained.

FIGS. 9(a) to 9(c) are graphs illustrating the characteristics of the magnetic sensor according to the embodiment.
FIG. 9A shows the characteristics when the signal magnetic field Hsig (external magnetic field) applied to the first magnetic element 11E is zero. FIG. 9(b) shows the characteristics when the signal magnetic field Hsig is positive. FIG. 9(c) shows the characteristics when the signal magnetic field Hsig is negative. These figures show the relationship between magnetic field H and resistance R (corresponding to electrical resistance Rx).

As shown in FIG. 9A, when the signal magnetic field Hsig is 0, the resistance R exhibits symmetrical characteristics with respect to the positive and negative magnetic fields H. In this example, when the AC magnetic field Hac is zero, the resistance R is a low resistance Ro. For example, the magnetization of the magnetization free layer rotates in substantially the same way with respect to the positive and negative magnetic fields H. Therefore, a symmetrical change in resistance can be obtained. Fluctuations in the resistance R with respect to the alternating current magnetic field Hac have the same value for positive and negative polarities. The period of change in resistance R is 1/2 times the period of AC magnetic field Hac. The change in resistance R has substantially no frequency component of the alternating magnetic field Hac.

As shown in FIG. 9(b), when a positive signal magnetic field Hsig is applied, the characteristics of the resistor R shift to the positive magnetic field H side. For example, the resistance R becomes high in the positive AC magnetic field Hac. In the negative AC magnetic field Hac, the resistance R becomes low.

As shown in FIG. 9(c), when a negative signal magnetic field Hsig is applied, the characteristics of the resistor R shift to the negative magnetic field H side. In the positive AC magnetic field Hac, for example, the resistance R becomes low. In the negative AC magnetic field Hac, the resistance R becomes high.

When a signal magnetic field Hsig of a predetermined magnitude is applied, different variations in resistance R occur depending on the positive and negative polarities of the alternating current magnetic field Hac. The period of variation of the resistance R with respect to the positive or negative polarity of the AC magnetic field Hac is the same as the period of the AC magnetic field Hac. An output voltage having an AC frequency component corresponding to the signal magnetic field Hsig is generated.

The above characteristics are obtained when the signal magnetic field Hsig does not change over time. When the signal magnetic field Hsig changes over time, the following will occur. Let the frequency of the signal magnetic field Hsig be the signal frequency fsig. Let the frequency of the alternating current magnetic field Hac be an alternating current frequency fac. At this time, an output corresponding to the signal magnetic field Hsig is generated at a frequency of fac±fsig.

When the signal magnetic field Hsig changes over time, the signal frequency fsig is, for example, 1 kHz or less. On the other hand, the AC frequency fac is sufficiently higher than the signal frequency fsig. For example, the AC frequency fac is 10 times or more the signal frequency fsig.

For example, the signal magnetic field Hsig can be detected with high accuracy by extracting the output voltage of a component (AC frequency component) having the same period (frequency) as the period (frequency) of the AC magnetic field Hac. In the magnetic sensor according to the embodiment, by utilizing such characteristics, the external magnetic field Hex (signal magnetic field Hsig) to be detected can be detected with high sensitivity. In the embodiment, the magnetic member 51 can efficiently apply the external magnetic field Hex (signal magnetic field Hsig) and the alternating current magnetic field Hac caused by the first current I1 to the first magnetic element 11E. High sensitivity can be obtained.

(Third embodiment)
In a third embodiment, the magnetic sensor includes multiple magnetic elements.
10 and 11 are schematic diagrams illustrating a magnetic sensor according to a third embodiment.
FIGS. 12(a) to 12(c) are schematic cross-sectional views illustrating the magnetic sensor according to the third embodiment.
13(a) to 13(c) are schematic plan views illustrating the magnetic sensor according to the third embodiment.
As shown in FIG. 10, the magnetic sensor 112 according to the embodiment includes, in addition to the first sensor section 10A, a second sensor section 10B, a third sensor section 10C, and a fourth sensor section 10D. The second sensor section 10B includes a second magnetic element 12E. The third sensor section 10C includes a third magnetic element 13E. The fourth sensor section 10D includes a fourth magnetic element 14E.

The first magnetic element 11E includes a first end 11Ee and a first other end 11Ef. The direction from the first end 11Ee to the first other end 11Ef is along the second direction (for example, the Y-axis direction). The second magnetic element 12E includes a second end 12Ee and a second other end 12Ef. The direction from the second end 12Ee to the second other end 12Ef is along the second direction. The third magnetic element 13E includes a third end 13Ee and a third other end 13Ef. The direction from the third end 13Ee to the third other end 13Ef is along the second direction. The fourth magnetic element 14E includes a fourth end 14Ee and a fourth other end 14Ef. The direction from the fourth end 14Ee to the fourth other end 14Ef is along the second direction.

For example, the first other end 11Ef is electrically connected to the second end 12Ee. The first end 11Ee is electrically connected to the third end 13Ee. The third other end 13Ef is electrically connected to the fourth end 14Ee. The second other end 12Ef is electrically connected to the fourth other end 14Ef. For example, the first to fourth magnetic elements 11E to 14E are bridge-connected.

The element current circuit 75 can supply element current to the first magnetic element 11E, the second magnetic element 12E, the third magnetic element 13E, and the fourth magnetic element 14E. In this example, the element current circuit 75 has a first connection point CP1 between the first end 11Ee and the third end 13Ee, a second connection point CP2 between the second other end 12Ef and the fourth other end 14Ef, The element current Id can be supplied during this period.

As shown in FIG. 10, the magnetic sensor 112 may include a detection circuit 73. The detection circuit 73 may be included in the circuit section 70. The detection circuit 73 detects the potential between a third connection point CP3 between the first other end 11Ef and the second end 12Ee and a fourth connection point CP4 between the third other end 13Ef and the fourth end 14Ee. Changes are detectable. By using a bridge circuit including a plurality of magnetic elements, noise can be further suppressed. Detection with higher sensitivity becomes possible.

As shown in FIG. 11 , the conductive member 20 includes, in addition to the first corresponding portion 21 , a second corresponding portion 22 , a third corresponding portion 23 , and a fourth corresponding portion 24 . The second corresponding portion 22 is along the second magnetic element 12E. The third corresponding portion 23 is along the third magnetic element 13E. The fourth corresponding portion 24 is along the fourth magnetic element 14E.

For example, the second corresponding portion 22 overlaps the second magnetic element 12E in the Z-axis direction (see FIG. 12(a)). For example, the third corresponding portion 23 overlaps the third magnetic element 13E in the Z-axis direction (see FIG. 12(b)). For example, the fourth corresponding portion 24 overlaps the fourth magnetic element 14E in the Z-axis direction (see FIG. 12(c)).

As shown in FIG. 11, for example, the first corresponding portion 21 includes a first portion 21e corresponding to the first end 11Ee and a first other portion 21f corresponding to the first other end 11Ef. For example, the first portion 21e overlaps the first end 11Ee in the Z-axis direction. The first other portion 21f overlaps the first other end portion 11Ef in the Z-axis direction.

As shown in FIG. 11, for example, the second corresponding portion 22 includes a second portion 22e corresponding to the second end 12Ee and a second other portion 22f corresponding to the second other end 12Ef. For example, the second portion 22e overlaps the second end 12Ee in the Z-axis direction. The second other portion 22f overlaps with the second other end portion 12Ef in the Z-axis direction.

As shown in FIG. 11, for example, the third corresponding portion 23 includes a third portion 23e corresponding to the third end 13Ee and a third other portion 23f corresponding to the third other end 13Ef. For example, the third portion 23e overlaps the third end 13Ee in the Z-axis direction. The third other portion 23f overlaps with the third other end portion 13Ef in the Z-axis direction.

As shown in FIG. 11, for example, the fourth corresponding portion 24 includes a fourth portion 24e corresponding to the fourth end 14Ee and a fourth other portion 24f corresponding to the fourth other end 14Ef. For example, the fourth portion 24e overlaps the fourth end 14Ee in the Z-axis direction. The fourth other portion 24f overlaps with the fourth other end portion 14Ef in the Z-axis direction.

The first current circuit 71 is capable of supplying a first current I1 containing an alternating current component to the first corresponding section 21, the second corresponding section 22, the third corresponding section 23, and the fourth corresponding section 24.

In this example, the first portion 21e is electrically connected to the third portion 23e. The first other portion 21f is electrically connected to the second portion 22e. The third other portion 23f is electrically connected to the fourth portion 24e. The second other portion 22f is electrically connected to the fourth other portion 24f. In this example, the first current circuit 71 is connected between the fifth connection point CP5 of the first other part 21f and the second part 22e and the sixth connection point CP6 of the third other part 23f and the fourth part 24e. , can supply a first current I1 including an alternating current component.

One time when the first current I1 is supplied to the conductive member 20 is defined as a first time. At the first time, the element current Id flows through the first magnetic element 11E in a direction from the first end 11Ee to the first other end 11Ef. At the first time, the element current Id flows through the second magnetic element 12E in a direction from the second end 12Ee to the second other end 12Ef. At the first time, the element current Id flows through the third magnetic element 13E in a direction from the third end 13Ee to the third other end 13Ef. At the first time, the element current Id flows through the fourth magnetic element 14E in a direction from the fourth end 14Ee to the fourth other end 14Ef.

At the first time, the first current I1 flows through the first corresponding portion 21 in the direction from the first other portion 21f to the first portion 21e. At the first time, the first current I1 flows through the second corresponding portion 22 in the direction from the second portion 22e to the second other portion 22f. At the first time, the first current I1 flows through the third corresponding portion 23 in the direction from the third portion 23e to the third other portion 23f. The first current I1 flows through the fourth corresponding portion 24 in the direction from the fourth other portion 24f to the fourth portion 24e.

A magnetic field caused by the first current I1 flowing through the first corresponding portion 21 is applied to the first magnetic element 11E. A magnetic field caused by the first current I1 flowing through the second corresponding portion 22 is applied to the second magnetic element 12E. A magnetic field caused by the first current I1 flowing through the third corresponding portion 23 is applied to the third magnetic element 13E. A magnetic field caused by the first current I1 flowing through the fourth corresponding portion 24 is applied to the fourth magnetic element 14E.

For example, the relationship between the direction of the element current Id flowing through the second magnetic element 12E at the first time and the direction of the first current I1 flowing through the second corresponding part 22 at the first time is as follows. The relationship between the direction of the element current Id and the direction of the first current I1 flowing through the first corresponding section 21 at the first time is opposite (in opposite phase). The relationship between the direction of the element current Id flowing through the fourth magnetic element 14E and the direction of the first current I1 flowing through the fourth corresponding portion 24 at the first time is the same as the direction of the element current Id flowing through the third magnetic element 13E. , and the direction of the first current I1 flowing through the third corresponding section 23 at the first time (opposite phase).

By allowing such current to flow through a plurality of bridge-connected magnetic elements, noise can be further suppressed.

As shown in FIG. 12(a), the second magnetic element 12E includes a second magnetic layer 12, a second opposing magnetic layer 12o, a second intermediate magnetic layer 12i, a second nonmagnetic layer 12n, and a second intermediate nonmagnetic layer. Including 12in. The direction from the second magnetic layer 12 to the second opposing magnetic layer 12o is along the first direction (Z-axis direction). The second intermediate magnetic layer 12i is provided between the second magnetic layer 12 and the second opposing magnetic layer 12o. The second nonmagnetic layer 12n is provided between the second magnetic layer 12 and the second intermediate magnetic layer 12i. The second intermediate nonmagnetic layer 12in is provided between the second intermediate magnetic layer 12i and the second opposing magnetic layer 12o.

As shown in FIG. 12(b), the third magnetic element 13E includes a third magnetic layer 13, a third opposing magnetic layer 13o, a third intermediate magnetic layer 13i, a third nonmagnetic layer 13n, and a third intermediate nonmagnetic layer. Including 13in. The direction from the third magnetic layer 13 to the third opposing magnetic layer 13o is along the first direction (Z-axis direction). The third intermediate magnetic layer 13i is provided between the third magnetic layer 13 and the third opposing magnetic layer 13o. The third nonmagnetic layer 13n is provided between the third magnetic layer 13 and the third intermediate magnetic layer 13i. The third intermediate nonmagnetic layer 13in is provided between the third intermediate magnetic layer 13i and the third opposing magnetic layer 13o.

As shown in FIG. 12(c), the fourth magnetic element 14E includes a fourth magnetic layer 14, a fourth opposing magnetic layer 14o, a fourth intermediate magnetic layer 14i, a fourth nonmagnetic layer 14n, and a fourth intermediate nonmagnetic layer. Including 14in. The direction from the fourth magnetic layer 14 to the fourth opposing magnetic layer 14o is along the first direction (Z-axis direction). The fourth intermediate magnetic layer 14i is provided between the fourth magnetic layer 14 and the fourth opposing magnetic layer 14o. The fourth nonmagnetic layer 14n is provided between the fourth magnetic layer 14 and the fourth intermediate magnetic layer 14i. The fourth intermediate nonmagnetic layer 14in is provided between the fourth intermediate magnetic layer 14i and the fourth opposing magnetic layer 14o.

As shown in FIG. 12(a), the second sensor section 10B may further include a second magnetic member 52 and a second opposing magnetic member 52A. The direction from the second magnetic member 52 to the second opposing magnetic member 52A is along the third direction (for example, the X-axis direction). The second magnetic element 12E overlaps the region 66b between the second magnetic member 52 and the second opposing magnetic member 52A in the first direction (Z-axis direction). The region 66b may be a part of the insulating member 65, for example. For example, a portion of the second magnetic element 12E overlaps a portion of the second magnetic member 52 in the first direction. Another part of the second magnetic element 12E overlaps with a part of the second opposing magnetic member 52A in the first direction.

As shown in FIG. 12(b), the third sensor section 10C may further include a third magnetic member 53 and a third opposing magnetic member 53A. The direction from the third magnetic member 53 to the third opposing magnetic member 53A is along the third direction (for example, the X-axis direction). The third magnetic element 13E overlaps the region 66c between the third magnetic member 53 and the third opposing magnetic member 53A in the first direction (Z-axis direction). The region 66c may be a part of the insulating member 65, for example. For example, a portion of the third magnetic element 13E overlaps a portion of the third magnetic member 53 in the first direction. Another part of the third magnetic element 13E overlaps with a part of the third opposing magnetic member 53A in the first direction.

As shown in FIG. 12(c), the fourth sensor section 10D may further include a fourth magnetic member 54 and a fourth opposing magnetic member 54A. The direction from the fourth magnetic member 54 to the fourth opposing magnetic member 54A is along the third direction (for example, the X-axis direction). The fourth magnetic element 14E overlaps with the region 66d between the fourth magnetic member 54 and the fourth opposing magnetic member 54A in the first direction (Z-axis direction). The region 66d may be a part of the insulating member 65, for example. For example, a portion of the fourth magnetic element 14E overlaps a portion of the fourth magnetic member 54 in the first direction. Another part of the fourth magnetic element 14E overlaps with a part of the fourth opposing magnetic member 54A in the first direction.

As shown in FIG. 13(a), the length of the second magnetic element 12E along the second direction (Y-axis direction) is defined as a second length L2. The length of the second magnetic element 12E along the third direction (for example, the X-axis direction) is defined as a second width w2. For example, the second length L2 exceeds the second width w2. For example, the magnetization of the magnetic layer included in the second magnetic element 12E is along the Y-axis direction, for example.

As shown in FIG. 13(b), the length of the third magnetic element 13E along the second direction (Y-axis direction) is defined as a third length L3. The length of the third magnetic element 13E along the third direction (for example, the X-axis direction) is defined as a third width w3. For example, the third length L3 exceeds the third width w3. For example, the magnetization of the magnetic layer included in the third magnetic element 13E is along the Y-axis direction, for example.

As shown in FIG. 13(c), the length of the fourth magnetic element 14E along the second direction (Y-axis direction) is defined as a fourth length L4. The length of the fourth magnetic element 14E along the third direction (for example, the X-axis direction) is defined as a fourth width w4. For example, the fourth length L4 exceeds the fourth width w4. For example, the magnetization of the magnetic layer included in the fourth magnetic element 14E is along the Y-axis direction, for example.

The configurations (including materials) of the second magnetic layer 12, the third magnetic layer 13, and the fourth magnetic layer 14 may be the same as the configuration (including materials) of the first magnetic layer 11. The structures (including materials) of the second opposing magnetic layer 12o, the third opposing magnetic layer 13o, and the fourth opposing magnetic layer 14o may be the same as the structure (including materials) of the first opposing magnetic layer 11o. The configurations (including materials) of the second intermediate magnetic layer 12i, the third intermediate magnetic layer 13i, and the fourth intermediate magnetic layer 14i may be the same as the configuration (including materials) of the first intermediate magnetic layer 11i. The configurations (including materials) of the second nonmagnetic layer 12n, the third nonmagnetic layer 13n, and the fourth nonmagnetic layer 14n may be the same as the configuration (including materials) of the first nonmagnetic layer 11n. The configurations (including materials) of the second intermediate nonmagnetic layer 12 inches, the third intermediate nonmagnetic layer 13 inches, and the fourth intermediate nonmagnetic layer 14 inches may be the same as the configuration (including materials) of the first intermediate nonmagnetic layer 11 inches. .

At least one of the second sensor section 10B, the third sensor section 10C, and the fourth sensor section 10D is a magnetic section similar to the first side magnetic section 11S and the first opposing side magnetic section 11SA described with respect to the first sensor section 10A. May include. At least one of the second sensor section 10B, the third sensor section 10C, and the fourth sensor section 10D has the same laminated magnetic layer as the first laminated magnetic layer 11sL and the first opposing laminated magnetic layer 11osL described with respect to the first sensor section 10A. It may include layers.

FIGS. 14(a) to 14(c) are schematic diagrams illustrating a magnetic sensor according to the third embodiment.
The configurations of the magnetic sensors 112a to 112c illustrated in FIGS. 14(a) to 14(c) may be combined with the configuration of the magnetic sensor 112 illustrated in FIG. 10.

As shown in FIG. 14(a), in the magnetic sensor 112a, the first portion 21e is electrically connected to the second other portion 22f. The first other portion 21f is electrically connected to the fourth portion 24e. The third portion 23e is electrically connected to the fourth other portion 24f. The third other portion 23f is electrically connected to the second portion 22e.

In the magnetic sensor 112a, the first current circuit 71 is connected between a seventh connection point CP7 between the first portion 21e and the second other portion 22f and an eighth connection point CP8 between the third portion 23e and the fourth other portion 24f. The first current I1 can be supplied to the first current I1.

In the magnetic sensor 112a, at one time (first time), the first current I1 is directed from the first other portion 21f to the first portion 21e, from the second portion 22e to the second other portion 22f, and from the second portion 22e to the second portion 22f. It has a direction from the third portion 23e to the third other portion 23f, and a direction from the fourth other portion 24f to the fourth portion 24e.

As shown in FIG. 14(b), in the magnetic sensor 112b, the first other portion 21f is electrically connected to the fourth portion 24e. The third other portion 23f is electrically connected to the second portion 22e. The second other portion 22f is electrically connected to the fourth other portion 24f.

In the magnetic sensor 112b, the first current circuit 71 can supply the first current I1 between the first portion 21e and the third portion 23e.

In the magnetic sensor 112b, at one time (first time), the first current I1 is directed from the first other portion 21f to the first portion 21e, from the second portion 22e to the second other portion 22f, and from the second portion 22e to the second portion 22f. It has a direction from the third portion 23e to the third other portion 23f, and a direction from the fourth other portion 24f to the fourth portion 24e.

As shown in FIG. 14(c), in the magnetic sensor 112c, the first portion 21e is electrically connected to the second other portion 22f, the third other portion 23f, and the fourth portion 24e. The first other portion 21f is electrically connected to the second portion 22e, the third portion 23e, and the fourth other portion 24f.

In the magnetic sensor 112c, the first current circuit 71 connects a ninth connection point CP9 between the first portion 21e, the second other portion 22f, the third other portion 23f, and the fourth portion 24e, the first other portion 21f, and the second portion 22e, and the tenth connection point CP10 of the third portion 23e and the fourth other portion 24f, it is possible to supply a first current I1 containing alternating current.

In the magnetic sensor 112c, at one time (first time), the first current I1 is directed from the first other portion 21f to the first portion 21e, from the second portion 22e to the second other portion 22f, and from the second portion 22e to the second portion 22f. It has a direction from the third portion 23e to the third other portion 23f, and a direction from the fourth other portion 24f to the fourth portion 24e.

Noise is also suppressed in the magnetic sensors 112a to 112c, allowing detection with high sensitivity.

15(a) and 15(b) are schematic diagrams illustrating a magnetic sensor according to a third embodiment.
As shown in FIG. 15(a), the magnetic sensor 113 according to the embodiment includes a first magnetic element 11E, a second magnetic element 12E, a first resistance element 11R, and a second resistance element 12R. The other configurations of the magnetic sensor 113 may be the same as those of the magnetic sensor 110, for example.

The first magnetic element 11E includes a first end 11Ee and a first other end 11Ef. The direction from the first end 11Ee to the first other end 11Ef is along the second direction (for example, the Y-axis direction). The second magnetic element 12E includes a second end 12Ee and a second other end 12Ef. The direction from the second end 12Ee to the second other end 12Ef is along the second direction. The first resistance element 11R includes a third end 13Ee and a third other end 13Ef. The direction from the third end 13Ee to the third other end 13Ef is along the second direction. The second resistance element 12R includes a fourth end 14Ee and a fourth other end 14Ef. The direction from the fourth end 14Ee to the fourth other end 14Ef is along the second direction.

The conductive member 20 includes a first corresponding part 21 and a second corresponding part 22. The first corresponding portion 21 is along the first magnetic element 11E. The second corresponding portion 22 is along the second magnetic element 12E.

The first corresponding portion 21 includes a first portion 21e corresponding to the first end 11Ee and a first other portion 21f corresponding to the first other end 11Ef. The second corresponding portion 22 includes a second portion 22e corresponding to the second end 12Ee and a second other portion 22f corresponding to the second other end 12Ef.

In the magnetic sensor 113, the first end 11Ee of the first magnetic element 11E is electrically connected to the third end 13Ee of the first resistance element 11R. The first other end 11Ef of the first magnetic element 11E is electrically connected to the second end 12Ee of the second magnetic element 12E. The third other end 13Ef of the first resistance element 11R is electrically connected to the fourth end 14Ee of the second resistance element 12R. The second other end 12Ef of the second magnetic element 12E is electrically connected to the fourth other end 14Ef of the second resistance element 12R.

The element current circuit 75 is connected between a first connection point CP1 between the first end 11Ee and the third end 13Ee and a second connection point CP2 between the second other end 12Ef and the fourth other end 14Ef. It is possible to supply the element current Id.

The detection circuit 73 detects the potential between a third connection point CP3 between the first other end 11Ef and the second end 12Ee and a fourth connection point CP4 between the third other end 13Ef and the fourth end 14Ee. Changes are detectable.

As shown in FIG. 15(b), the first other portion 21f is electrically connected to the second portion 22e. The first portion 21e is electrically connected to the second other portion 22f. The first current circuit 71 provides a first current I1 between a fifth connection point CP5 of the first other portion 21f and the second portion 22e and a sixth connection point CP6 of the first portion 21e and the second other portion 22f. can be supplied. In the magnetic sensor 113 as well, noise is suppressed and detection with high sensitivity becomes possible.

FIGS. 16(a) and 16(b) are schematic diagrams illustrating a magnetic sensor according to a third embodiment.
As shown in FIG. 16(a), the magnetic sensor 114 according to the embodiment includes a first magnetic element 11E, a second magnetic element 12E, a first resistance element 11R, and a second resistance element 12R. The other configuration of the magnetic sensor 114 may be the same as that of the magnetic sensor 110, for example.

As shown in FIG. 16(a), in the magnetic sensor 114, the first end 11Ee of the first magnetic element 11E is electrically connected to the third end 13Ee of the first resistance element 11R. The first other end 11Ef of the first magnetic element 11E is electrically connected to the fourth end 14Ee of the second resistance element 12R. The third other end 13Ef of the first resistance element 11R is electrically connected to the second end 12Ee of the second magnetic element 12E. The fourth other end 14Ef of the second resistance element 12R is electrically connected to the second other end 12Ef of the second magnetic element 12E.

The element current circuit 75 connects the element between a first connection point CP1 between the first end 11Ee and the third end 13Ee and a second connection point CP2 between the fourth other end 14Ef and the second other end 12Ef. A current Id can be supplied.

The magnetic sensor 114 may include a detection circuit 73. The detection circuit 73 detects the potential between a third connection point CP3 between the first other end 11Ef and the fourth end 14Ee and a fourth connection point CP4 between the third other end 13Ef and the second end 12Ee. Changes are detectable.

As shown in FIG. 16(b), the first portion 21e of the first corresponding portion 21 is electrically connected to the second portion 22e of the second corresponding portion 22. The first other portion 21f of the first corresponding portion 21 is electrically connected to the second other portion 22f of the second corresponding portion 22.

The first current circuit 71 supplies a first current I1 between a fifth connection point CP5 of the first other portion 21f and the second other portion 22f and a sixth connection point CP6 of the first portion 21e and the second portion 22e. can be supplied.

(Fourth embodiment)
The fourth embodiment relates to an inspection device. As described below, the testing device may include a diagnostic device.

FIG. 17 is a schematic diagram illustrating an inspection apparatus according to the fourth embodiment.
As shown in FIG. 17, the inspection device 550 according to the embodiment includes a magnetic sensor according to the embodiment (in the example of FIG. 17, the magnetic sensor 110) and a processing section 78. The processing unit 78 processes the output signal SigX obtained from the magnetic sensor 110. In this example, the processing section 78 includes a sensor control circuit section 75c, a first lock-in amplifier 75a, and a second lock-in amplifier 75b. For example, the first current circuit 71 is controlled by the sensor control circuit section 75c, and the first current I1 containing an alternating current component is supplied from the first current circuit 71 to the sensor section 10S. The frequency of the AC component of the first current I1 is, for example, 100 kHz or less. An element current Id is supplied from the element current circuit 75 to the sensor section 10S. The sensor section 10S includes, for example, at least one magnetic element. The detection circuit 73 detects a change in the potential at the sensor section 10S. For example, the output of the detection circuit 73 becomes the output signal SigX.

In this example, the inspection device 550 includes a magnetic field application section 76A. The magnetic field application unit 76A can apply a magnetic field to the detection target 80. The detection target 80 is, for example, an inspection target. The detection target 80 includes at least a test conductive member 80c made of metal or the like. When the magnetic field by the magnetic field application section 76A is applied to the test conductive member 80c, for example, an eddy current is generated in the test conductive member 80c. If the inspection conductive member 80c has a scratch or the like, the state of the eddy current changes. By detecting the magnetic field caused by the eddy current by a magnetic sensor (eg, magnetic sensor 110, etc.), the state (eg, flaws, etc.) of the inspection conductive member 80c can be inspected. The magnetic field applying section 76A is, for example, an eddy current generating section.

In this example, the magnetic field application section 76A includes an application control circuit section 76a, a drive amplifier 76b, and a coil 76c. A current is supplied to the drive amplifier 76b under control by the application control circuit section 76a. The current is, for example, alternating current. The frequency of the current is, for example, the eddy current excitation frequency. The eddy current excitation frequency is, for example, 10 Hz or more and 100 kHz or less. The eddy current excitation frequency may be, for example, less than 100 kHz.

For example, information (for example, a signal may be used) regarding the frequency of the AC component of the first current I1 is supplied from the sensor control circuit section 75c to the first lock-in amplifier 75a as a reference wave (reference signal). The output of the first lock-in amplifier 75a is supplied to the second lock-in amplifier 75b. Information (for example, a signal may be used) regarding the eddy current excitation frequency is supplied from the application control circuit section 76a to the second lock-in amplifier 75b as a reference wave (reference signal). The second lock-in amplifier 75b can output a signal component according to the eddy current excitation frequency.

Thus, for example, the processing section 78 includes the first lock-in amplifier 75a. The output signal SigX obtained from the magnetic sensor 110 and the signal SigR1 corresponding to the frequency of the AC component included in the first current I1 are input to the first lock-in amplifier 75a. The first lock-in amplifier 75a can output an output signal SigX1 using the signal SigR1 corresponding to the frequency of the AC component included in the first current I1 as a reference wave (reference signal). Providing the first lock-in amplifier 75a suppresses noise and enables highly sensitive detection.

The processing unit 78 may further include a second lock-in amplifier 75b. The second lock-in amplifier 75b receives the output signal SigX1 of the first lock-in amplifier 75a and the frequency (in this example, the magnetic field by the magnetic field applying section 76A) of the supply signal supplied toward the detection target 80 (inspection target). A signal SigR2 corresponding to the eddy current excitation frequency) is input. The second lock-in amplifier 75b is capable of outputting an output signal SigX2 using as a reference wave (reference signal) a signal SigR2 corresponding to the frequency of the supply signal supplied toward the detection target 80 (inspection target). By providing the second lock-in amplifier 75b, noise can be further suppressed and detection with even higher sensitivity can be achieved.

The inspection device 550 can inspect the inspection conductive member 80c of the detection target 80 for abnormalities such as scratches.

FIG. 18 is a schematic diagram illustrating an inspection apparatus according to the fourth embodiment.
As shown in FIG. 18, the inspection device 551 according to the embodiment includes a magnetic sensor (for example, the magnetic sensor 110) according to the embodiment and a processing section 78. The configurations of the magnetic sensor and the processing section 78 in the inspection device 551 may be the same as those in the inspection device 550. In this example, the inspection device 551 includes a detection target drive section 76B. The detection target drive unit 76B can supply current to the test conductive member 80c included in the detection target 80. The inspection conductive member 80c is, for example, a wiring included in the detection target 80. The magnetic field caused by the current 80i flowing through the test conductive member 80c is detected by the magnetic sensor 110. Based on the abnormality detected by the magnetic sensor 110, the test conductive member 80c can be tested. The detection target 80 may be, for example, an electronic device such as a semiconductor device. The detection target 80 may be, for example, a battery.

In this example, the detection target drive section 76B includes an application control circuit section 76a and a drive amplifier 76b. The drive amplifier 76b is controlled by the application control circuit section 76a, and current is supplied from the drive amplifier 76b to the test conductive member 80c. The current is, for example, alternating current. For example , an alternating current is supplied to the inspection conductive member 80c. The frequency of the alternating current is, for example, 10 Hz or more and 100 kHz or less. The frequency may be less than 100kHz, for example. Also in this example, by providing the first lock-in amplifier 75a and the second lock-in amplifier 75b, for example, noise can be suppressed and detection with high sensitivity can be achieved. In one example of the inspection device 551, a plurality of magnetic sensors (eg, a plurality of magnetic sensors 110) may be provided. The plurality of magnetic sensors are, for example, a sensor array. The sensor array allows the test conductive member 80c to be tested in a short time. In one example of testing device 551, a magnetic sensor (eg, magnetic sensor 110) may be scanned to test conductive member 80c.

FIG. 19 is a schematic perspective view showing an inspection device according to the fourth embodiment.
As shown in FIG. 19, the inspection device 710 according to the embodiment includes a magnetic sensor 150a and a processing section 770. The magnetic sensor 150a may be a magnetic sensor according to any one of the first to third embodiments or a modification thereof. The processing unit 770 processes the output signal obtained from the magnetic sensor 150a. In the processing unit 770, a comparison between the signal obtained from the magnetic sensor 150a and a reference value may be performed. The processing unit 770 can output test results based on the processing results.

For example, the inspection device 710 inspects the inspection object 680. The inspection target 680 is, for example, an electronic device (including a semiconductor circuit, etc.). The test object 680 may be, for example, the battery 610.

For example, the magnetic sensor 150a according to the embodiment may be used together with the battery 610. For example, battery system 600 includes a battery 610 and magnetic sensor 150a. The magnetic sensor 150a can detect the magnetic field generated by the current flowing through the battery 610.

FIG. 20 is a schematic plan view showing an inspection device according to the fourth embodiment.
As shown in FIG. 20, the magnetic sensor 150a includes, for example, a plurality of magnetic sensors according to the embodiment. In this example, magnetic sensor 150a includes multiple magnetic sensors (eg, magnetic sensor 110, etc.). For example, the plurality of magnetic sensors are arranged along two directions (for example, the X-axis direction and the Y-axis direction). For example, the plurality of magnetic sensors 110 are provided on a base.

The magnetic sensor 150a can detect a magnetic field generated by a current flowing through the test object 680 (for example, the battery 610 may be used). For example, when the battery 610 approaches an abnormal state, an abnormal current may flow through the battery 610. By detecting abnormal current with the magnetic sensor 150a, changes in the state of the battery 610 can be known. For example, with the magnetic sensor 150a placed close to the battery 610, the entire battery 610 can be inspected in a short time using sensor group driving means in two directions. The magnetic sensor 150a may be used to inspect the battery 610 during its manufacture.

The magnetic sensor according to the embodiment can be applied to, for example, an inspection device 710 such as a diagnostic device. FIG. 21 is a schematic diagram showing a magnetic sensor and an inspection device according to the fourth embodiment.
As shown in FIG. 21, a diagnostic device 500, which is an example of the testing device 710, includes a magnetic sensor 150. The magnetic sensor 150 includes the magnetic sensors described in connection with the first to third embodiments and modifications thereof.

In the diagnostic device 500, the magnetic sensor 150 is, for example, a magnetoencephalograph. Magnetoencephalography detects magnetic fields emitted by cranial nerves. When the magnetic sensor 150 is used for a magnetoencephalograph, the size of the magnetic element included in the magnetic sensor 150 is, for example, 1 mm or more and less than 10 mm. This size is, for example, the length including the MFC.

As shown in FIG. 21, a magnetic sensor 150 (magnetoencephalograph) is attached to the head of a human body, for example. The magnetic sensor 150 (magnetoencephalograph) includes a sensor section 301. The magnetic sensor 150 (magnetoencephalograph) may include a plurality of sensor units 301. The number of the plurality of sensor units 301 is, for example, approximately 100 (for example, 50 or more and 150 or less). The plurality of sensor units 301 are provided on a flexible base 302.

The magnetic sensor 150 may include, for example, a differential detection circuit. The magnetic sensor 150 may include a sensor other than the magnetic sensor (for example, a potential terminal or an acceleration sensor).

The size of magnetic sensor 150 is small compared to the size of conventional SQUID magnetic sensors. Therefore, it is easy to install a plurality of sensor units 301. It is easy to install the plurality of sensor units 301 and other circuits. The plurality of sensor units 301 and other sensors can easily coexist.

The base body 302 may include, for example, an elastic body such as silicone resin. For example, a plurality of sensor sections 301 are connected to and provided on the base body 302 . The base body 302 can be in close contact with the head, for example.

The input/output cord 303 of the sensor section 301 is connected to the sensor drive section 506 and the signal input/output section 504 of the diagnostic device 500. Magnetic field measurement is performed in the sensor unit 301 based on the electric power from the sensor drive unit 506 and the control signal from the signal input/output unit 504. The result is input to the signal input/output section 504. The signal obtained by the signal input/output section 504 is supplied to the signal processing section 508. In the signal processing unit 508, processes such as noise removal, filtering, amplification, and signal calculation are performed. The signal processed by the signal processing section 508 is supplied to the signal analysis section 510. The signal analysis unit 510 extracts, for example, a specific signal for magnetoencephalography measurement. The signal analysis unit 510 performs signal analysis to match signal phases, for example.

The output of the signal analysis section 510 (data for which signal analysis has been completed) is supplied to the data processing section 512. Data processing section 512 performs data analysis. In this data analysis, for example, image data such as MRI (Magnetic Resonance Imaging) can be incorporated. In this data analysis, for example, scalp potential information such as EEG (Electroencephalogram) can be incorporated. For example, a data section 514 such as MRI or EEG is connected to the data processing section 512 . Data analysis includes, for example, neural firing point analysis or inverse problem analysis.

The results of the data analysis are supplied to the imaging diagnosis unit 516, for example. Imaging is performed in the imaging diagnostic unit 516. Imaging aids diagnosis.

The series of operations described above is controlled by the control mechanism 502, for example. For example, necessary data such as primary signal data or metadata during data processing is stored in a data server. The data server and the control mechanism may be integrated.

The diagnostic device 500 according to the embodiment includes a magnetic sensor 150 and a processing unit that processes an output signal obtained from the magnetic sensor 150. This processing section includes, for example, at least one of a signal processing section 508 and a data processing section 512. The processing unit includes, for example, a computer.

In the magnetic sensor 150 shown in FIG. 21, the sensor section 301 is installed on the head of the human body. The sensor unit 301 may be installed on the chest of the human body. This enables magnetocardial measurement. For example, the sensor unit 301 may be placed on the abdomen of a pregnant woman. Thereby, a fetal heartbeat test can be performed.

The magnetic sensor device including the subject is preferably installed in a shielded room. Thereby, for example, the influence of geomagnetism or magnetic noise can be suppressed.

For example, a mechanism may be provided to locally shield the measurement site of the human body or the sensor section 301. For example, a shield mechanism may be provided in the sensor section 301. For example, effective shielding may be provided in signal analysis or data processing.

In embodiments, the substrate 302 may be flexible or substantially non-flexible. In the example shown in FIG. 21, the base 302 is a continuous film processed into a hat shape. The base body 302 may be in the form of a net. This provides, for example, good wearability. For example, the adhesion of the base 302 to the human body is improved. The base body 302 may be helmet-shaped and may be hard.

FIG. 22 is a schematic diagram showing an inspection device according to the fourth embodiment.
FIG. 22 is an example of a magnetocardiograph. In the example shown in FIG. 22, a sensor section 301 is provided on a flat hard base 305. In the example shown in FIG.

In the example shown in FIG. 22, the input/output of signals obtained from the sensor unit 301 is the same as the input/output described with regard to FIG. In the example shown in FIG. 22, the processing of the signal obtained from the sensor unit 301 is similar to the processing described with regard to FIG.

There is a reference example of using a SQUID (Superconducting Quantum Interference Device) magnetic sensor as a device to measure weak magnetic fields such as those generated by living organisms. In this reference example, since superconductivity is used, the device is large and the power consumption is large. The burden on the measurement target (patient) is heavy.

According to the embodiment, the device can be made smaller. Power consumption can be suppressed. The burden on the measurement target (patient) can be reduced. According to the embodiment, the S/N ratio of magnetic field detection can be improved. Sensitivity can be improved.

Embodiments may include the following configurations (eg, technical proposals).
(Configuration 1)
a first magnetic element;
a first side magnetic part;
a first opposing side magnetic section;
a first sensor section including;
a conductive member;
Equipped with
The conductive member includes a first corresponding portion along the first magnetic element,
The first magnetic element is
a first magnetic layer;
a first opposing magnetic layer, the direction from the first magnetic layer to the first opposing magnetic layer is along a first direction;
a first intermediate magnetic layer provided between the first magnetic layer and the first opposing magnetic layer;
including;
The first side magnetic section includes a first side magnetic layer,
The first opposing side magnetic section includes a first opposing side magnetic layer,
The first intermediate magnetic layer is a magnetic sensor located between the first side magnetic layer and the first opposing side magnetic layer in a second direction intersecting the first direction.

(Configuration 2)
The distance between the first side magnetic part and the first magnetic element along the second direction is 0.01 times or less the first length of the first magnetic element along the second direction . The magnetic sensor according to configuration 1.

(Configuration 3)
The first magnetic element is
a first nonmagnetic layer provided between the first magnetic layer and the first intermediate magnetic layer;
a first intermediate nonmagnetic layer provided between the first intermediate magnetic layer and the first opposing magnetic layer;
further including;
The first side magnetic section further includes a first laminated side magnetic layer,
The first opposing side magnetic section further includes a first opposing laminated side magnetic layer,
The magnetic sensor according to Configuration 1 or 2, wherein the first opposing magnetic layer is located between the first stacked side magnetic layer and the first opposing stacked side magnetic layer in the second direction.

(Configuration 4)
The first side magnetic section further includes a first side nonmagnetic layer provided between the first side magnetic layer and the first laminated side magnetic layer,
The first opposing side magnetic section further includes a first opposing side nonmagnetic layer provided between the first opposing side magnetic layer and the first opposing laminated side magnetic layer,
The magnetic sensor according to configuration 3, wherein the first side nonmagnetic layer and the first opposing side nonmagnetic layer include a material included in the first intermediate nonmagnetic layer.

(Configuration 5)
a first magnetic element;
a first laminated magnetic layer;
a first facing laminated magnetic layer;
a first sensor section including;
a conductive member;
Equipped with
The conductive member includes a first corresponding portion along the first magnetic element,
The first magnetic element is
a first magnetic layer;
a first opposing magnetic layer, the direction from the first magnetic layer to the first opposing magnetic layer is along a first direction;
a first intermediate magnetic layer provided between the first magnetic layer and the first opposing magnetic layer;
a first nonmagnetic layer provided between the first magnetic layer and the first intermediate magnetic layer;
a first intermediate nonmagnetic layer provided between the first intermediate magnetic layer and the first opposing magnetic layer;
including;
The direction from the first laminated magnetic layer to the first opposing laminated magnetic layer is along a second direction intersecting the first direction,
A portion of the first opposing magnetic layer is between the first magnetic layer and the first laminated magnetic layer,
The other portion of the first opposing magnetic layer is located between the first magnetic layer and the first opposing laminated magnetic layer.

(Configuration 6)
The first laminated magnetic layer is in contact with the part of the first opposing magnetic layer, or along the first direction between the part of the first opposing magnetic layer and the first laminated magnetic layer. The distance is 0.001 times or less the thickness of the first opposing magnetic layer,
The first opposing laminated magnetic layer is in contact with the other portion of the first opposing magnetic layer, or in the first direction between the other portion of the first opposing magnetic layer and the first opposing laminated magnetic layer. The magnetic sensor according to configuration 5, wherein the distance along is 0.001 times or less the thickness of the first opposing magnetic layer.

(Configuration 7)
The length of the first laminated magnetic layer along the second direction is 0.01 times or more and 0.1 times or less the length of the first magnetic element along the second direction,
Configuration 5, wherein the length of the first facing laminated magnetic layer along the second direction is 0.01 times or more and 0.1 times or less the length of the first magnetic element along the second direction. 6. The magnetic sensor according to 6.

(Configuration 8)
A first length of the first magnetic element along the second direction exceeds a first width of the first magnetic element along a direction intersecting a plane including the first direction and the second direction. 8. The magnetic sensor according to any one of 1 to 7.

(Configuration 9)
The first sensor section further includes a first magnetic member and a first opposing magnetic member,
The direction from the first magnetic member to the first opposing magnetic member is along a third direction intersecting a plane including the first direction and the second direction,
9. The magnetic sensor according to any one of configurations 1 to 8, wherein the first magnetic element overlaps a region between the first magnetic member and the first opposing magnetic member in the first direction.

(Configuration 10)
A portion of the first magnetic element overlaps a portion of the first magnetic member in the first direction,
The magnetic sensor according to configuration 9, wherein another part of the first magnetic element overlaps a part of the first opposing magnetic member in the first direction.

(Configuration 11)
The magnetic sensor according to any one of configurations 1 to 10, wherein the first corresponding portion overlaps the first magnetic element in a direction intersecting the second direction.

(Configuration 12)
The first magnetic element includes a first end and a first other end, and a direction from the first end to the first other end is along the second direction;
The first corresponding part includes a first part and a first other part, the first part corresponds to the first end, and the first other part corresponds to the first other end. The magnetic sensor according to Configuration 11.

(Configuration 13)
the first portion overlaps the first end in the first direction,
13. The magnetic sensor according to configuration 12, wherein the first other portion overlaps the first other end in the first direction.

(Configuration 14)
14. The magnetic sensor according to any one of configurations 11 to 13, wherein the electrical resistance of the first magnetic element has a characteristic of being an even function with respect to the current flowing through the first corresponding portion.

(Configuration 15)
8. The magnetic sensor according to any one of configurations 1 to 7, wherein the electrical resistance of the first magnetic element has a characteristic of being an even function with respect to the magnetic field applied to the first magnetic element.

(Configuration 16)
a second sensor section including a second magnetic element;
a third sensor section including a third magnetic element;
a fourth sensor section including a fourth magnetic element;
an element current circuit;
a first current circuit;
Furthermore,
The first magnetic element includes a first end and a first other end, and the direction from the first end to the first other end is along the second direction,
The second magnetic element includes a second end and a second other end, and the direction from the second end to the second other end is along the second direction,
The third magnetic element includes a third end and a third other end, and the direction from the third end to the third other end is along the second direction,
The fourth magnetic element includes a fourth end and a fourth other end, and the direction from the fourth end to the fourth other end is along the second direction,
The conductive member is
a second corresponding portion along the second magnetic element;
a third corresponding portion along the third magnetic element;
a fourth corresponding portion along the fourth magnetic element;
including;
The first corresponding portion includes a first portion corresponding to the first end portion and a first other portion corresponding to the first other end portion,
The second corresponding portion includes a second portion corresponding to the second end portion and a second other portion corresponding to the second other end portion,
The third corresponding portion includes a third portion corresponding to the third end portion and a third other portion corresponding to the third other end portion,
The fourth corresponding portion includes a fourth portion corresponding to the fourth end portion and a fourth other portion corresponding to the fourth other end portion,
The element current circuit can supply the element current to the first magnetic element, the second magnetic element, the third magnetic element, and the fourth magnetic element,
The magnetic sensor according to configuration 11, wherein the first current circuit is capable of supplying a first current containing an alternating current component to the first corresponding part, the second corresponding part, the third corresponding part, and the fourth corresponding part. .

(Configuration 17)
At a first time when the first current is supplied to the conductive member,
the element current flows through the first magnetic element in a direction from the first end to the first other end;
the element current flows through the second magnetic element in a direction from the second end to the second other end;
the element current flows through the third magnetic element in a direction from the third end to the third other end;
the element current flows through the fourth magnetic element in a direction from the fourth end to the fourth other end;
The first current flows through the first corresponding part in a direction from the first other part to the first part,
the first current flows through the second corresponding portion in a direction from the second portion to the second other portion;
the first current flows through the third corresponding portion in a direction from the third portion to the third other portion;
17. The magnetic sensor according to configuration 16, wherein the first current flows through the fourth corresponding portion in a direction from the fourth other portion to the fourth portion.

(Configuration 18)
the first other end is electrically connected to the second end,
the first end is electrically connected to the third end,
the third other end is electrically connected to the fourth end,
the second other end is electrically connected to the fourth other end,
The element current circuit supplies the element current between a first connection point between the first end and the third end and a second connection point between the second other end and the fourth other end. It is possible to supply
the first part is electrically connected to the third part,
the first other part is electrically connected to the second part,
the third other part is electrically connected to the fourth part,
the second other portion is electrically connected to the fourth other portion,
The first current circuit supplies the first current between a fifth connection point between the first other part and the second part and a sixth connection point between the third other part and the fourth part. 18. The magnetic sensor according to configuration 17, which is capable of supplying.

(Configuration 19)
Further equipped with a detection circuit,
The detection circuit detects a change in potential between a third connection point between the first other end and the second end and a fourth connection point between the third other end and the fourth end. 19. The magnetic sensor according to configuration 17 or 18, which is detectable.

(Configuration 20)
The magnetic sensor according to any one of configurations 1 to 19,
a processing unit capable of processing a signal output from the magnetic sensor;
Inspection equipment equipped with

According to the embodiment, a magnetic sensor and an inspection device that can improve sensitivity can be provided.

In this specification, "perpendicular" and "parallel" are not only strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and may be substantially perpendicular and substantially parallel. .

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, with regard to the specific configuration of each element included in the magnetic sensor, such as a magnetic element, a magnetic layer, a non-magnetic layer, a magnetic member, a conductive member, and a circuit, a person skilled in the art can appropriately select from a known range. As long as it can be carried out in the same way and the same effect can be obtained, it is included in the scope of the present invention.

Further, a combination of any two or more elements of each specific example to the extent technically possible is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

In addition, all magnetic sensors and inspection devices that can be implemented with appropriate design changes by those skilled in the art based on the magnetic sensors and inspection devices described above as embodiments of the present invention may also be implemented as long as they include the gist of the present invention. It falls within the scope of the present invention.

In addition, within the scope of the idea of the present invention, those skilled in the art will be able to come up with various changes and modifications, and these changes and modifications are also understood to fall within the scope of the present invention. .

Although several embodiments of the invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included within the scope and gist of the invention, as well as within the scope of the invention described in the claims and its equivalents.

10A to 10D...first to fourth sensor sections, 10S...sensor sections, 11 to 14...first to fourth magnetic layers, 11E to 14E...first to fourth magnetic elements, 11Ee to 14Ee...first to fourth Ends, 11Ef to 14Ef...first to fourth other ends, 11R, 12R...first and second resistance elements, 11S...first side magnetic part, 11SA...first opposing side magnetic part, 11i to 14i...th 1st to fourth intermediate magnetic layers, 11in to 14in...first to fourth intermediate nonmagnetic layers, 11n to 14n...first to fourth nonmagnetic layers, 11o to 14o...first to fourth opposing magnetic layers, 11op... Part, 11oq...other part, 11os...first opposing side magnetic layer, 11osL...first opposing laminated magnetic layer, 11osn...first opposing side non-magnetic layer, 11oss...first opposing laminated side magnetic layer, 11s...first Side magnetic layer, 11sL...first laminated magnetic layer, 11sn...first side non-magnetic layer, 11ss...first laminated side magnetic layer, 20...conductive member, 21-24...first to fourth conductive member, 21e-24e ...first to fourth parts, 21f to 24f...first to fourth other parts, 51 to 54...first to fourth magnetic members, 51A to 54A...first to fourth opposing magnetic parts, 65...insulating member, 66a to 66d...area, 70...circuit section, 71...first current circuit, 73...detection circuit, 75...element current circuit, 75a, 75b...first and second lock-in amplifiers, 75c...sensor control circuit section, 76A ... Magnetic field application unit, 76B... Detection target drive unit, 76a... Application control circuit unit, 76b... Drive amplifier, 76c... Coil, 78... Processing unit, 80... Detection target, 80c... Inspection conductive member, 80i... Current, 110, 110a, 111, 111a, 112, 112a to 112c, 113, 114, 150, 150a...Magnetic sensor, 301...Sensor section, 302...Base, 303...I/O code, 305...Base, 500...Diagnostic device, 502...Control Mechanism, 504...Signal input/output section, 506...Sensor drive section, 508...Signal processing section, 510...Signal analysis section, 512...Data processing section, 514...Data section, 516...Imaging diagnosis section, 550, 551...Inspection Device, 600...Electronic system, 610...Battery, 680...Inspection object, 710...Inspection device, 770...Processing unit, CP1 to CP10...1st to 10th connection points, H...Magnetic field, Hac...AC magnetic field, Hex...External Magnetic field, Hex1 to Hex3...first to third magnetic field, Hsig...signal magnetic field, I1...first current, Ia1 to Ia3...first to third value current, Id...element current, L1 to L4...first to fourth Length, La1, Lb1...Length, R...Resistance, R1-R4...1st to 4th resistance value, Ro...Low resistance, Rx...Electrical resistance, SigR1, SigR2...Signal, SigX, SigX1, SigX2...Output signal , g1, g2...distance, t1...first thickness, w1~w4...first~fourth width

Claims (7)

a first magnetic element;
a first side magnetic part;
a first opposing side magnetic section;
a first sensor section including;
a conductive member;
Equipped with
The conductive member includes a first corresponding portion along the first magnetic element,
The first magnetic element is
a first magnetic layer;
a first opposing magnetic layer, the direction from the first magnetic layer to the first opposing magnetic layer is along a first direction;
a first intermediate magnetic layer provided between the first magnetic layer and the first opposing magnetic layer;
including;
The first side magnetic section includes a first side magnetic layer,
The first opposing side magnetic section includes a first opposing side magnetic layer,
The first intermediate magnetic layer is between the first side magnetic layer and the first opposing side magnetic layer in a second direction perpendicular to the first direction,
The first magnetic element is
a first nonmagnetic layer provided between the first magnetic layer and the first intermediate magnetic layer;
a first intermediate nonmagnetic layer provided between the first intermediate magnetic layer and the first opposing magnetic layer;
further including;
The first side magnetic section further includes a first laminated side magnetic layer,
The first opposing side magnetic section further includes a first opposing laminated side magnetic layer,
The first opposing magnetic layer is located between the first stacked side magnetic layer and the first opposing stacked side magnetic layer in the second direction . The first sensor section further includes a first magnetic member and a first opposing magnetic member,
The direction from the first magnetic member to the first opposing magnetic member is along a third direction perpendicular to a plane including the first direction and the second direction,
The magnetic sensor according to claim 1, wherein the first magnetic element overlaps a region between the first magnetic member and the first opposing magnetic member in the first direction. The magnetic sensor according to claim 1 or 2 , wherein the first corresponding part overlaps the first magnetic element in a direction perpendicular to the second direction. The magnetic sensor according to claim 3 , wherein the electrical resistance of the first magnetic element has a characteristic of being an even function with respect to the current flowing through the first corresponding portion. a second sensor section including a second magnetic element;
a third sensor section including a third magnetic element;
a fourth sensor section including a fourth magnetic element;
an element current circuit;
a first current circuit;
Furthermore,
The first magnetic element includes a first end and a first other end, and the direction from the first end to the first other end is along the second direction,
The second magnetic element includes a second end and a second other end, and the direction from the second end to the second other end is along the second direction,
The third magnetic element includes a third end and a third other end, and the direction from the third end to the third other end is along the second direction,
The fourth magnetic element includes a fourth end and a fourth other end, and the direction from the fourth end to the fourth other end is along the second direction,
The conductive member is
a second corresponding portion along the second magnetic element;
a third corresponding portion along the third magnetic element;
a fourth corresponding portion along the fourth magnetic element;
including;
The first corresponding portion includes a first portion corresponding to the first end portion and a first other portion corresponding to the first other end portion,
The second corresponding portion includes a second portion corresponding to the second end portion and a second other portion corresponding to the second other end portion,
The third corresponding portion includes a third portion corresponding to the third end portion and a third other portion corresponding to the third other end portion,
The fourth corresponding portion includes a fourth portion corresponding to the fourth end portion and a fourth other portion corresponding to the fourth other end portion,
The element current circuit can supply element current to the first magnetic element, the second magnetic element, the third magnetic element, and the fourth magnetic element,
The first current circuit is capable of supplying a first current containing an alternating current component to the first corresponding part, the second corresponding part, the third corresponding part, and the fourth corresponding part. magnetic sensor. At a first time when the first current is supplied to the conductive member,
A portion of the element current flows through the first magnetic element in a direction from the first end to the first other end;
the part of the element current flows through the second magnetic element in a direction from the second end to the second other end;
Another part of the element current flows through the third magnetic element in a direction from the third end to the third other end,
the other part of the element current flows through the fourth magnetic element in a direction from the fourth end to the fourth other end;
The first current flows through the first corresponding part in a direction from the first other part to the first part,
The first current flows through the second corresponding portion in a direction from the second portion to the second other portion,
The first current flows through the third corresponding portion in a direction from the third portion to the third other portion,
The magnetic sensor according to claim 5 , wherein the first current flows through the fourth corresponding portion in a direction from the fourth other portion to the fourth portion. The magnetic sensor according to any one of claims 1 to 6 ,
a processing unit capable of processing a signal output from the magnetic sensor;
Equipped with
The magnetic sensor is an inspection device that can detect a magnetic field generated by a current flowing through the inspection target .

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