JP7335763B2 - Exposure device - Google Patents

Description

The present invention relates to an exposure apparatus that exposes a substrate using vacuum ultraviolet rays.

Vacuum ultraviolet rays are sometimes used to modify films formed on substrates. For example, Patent Literature 1 describes an exposure apparatus that exposes a film containing an induced self-assembly material on a substrate using vacuum ultraviolet rays.

The exposure apparatus includes a processing chamber, a light projection section and a closure section. The processing chamber has an upper opening and an interior space. The light projecting part is arranged above the processing chamber so as to block the upper opening of the processing chamber. A side surface of the processing chamber is formed with a transfer opening for transferring the substrate between the inside and the outside of the processing chamber.

During the exposure processing of the substrate, the transfer opening is first opened, and the substrate is carried into the processing chamber through the transfer opening. Next, with the substrate placed inside the processing chamber, the transfer opening is closed to seal the internal space of the processing chamber. In addition, the entire atmosphere in the processing chamber is replaced with an inert gas in order to reduce the attenuation of the vacuum ultraviolet rays irradiated to the substrate due to oxygen. When the oxygen concentration in the processing chamber is reduced to a predetermined concentration, the substrate is irradiated with vacuum ultraviolet rays through the upper opening of the processing chamber. This modifies the film on the substrate. After that, the transfer opening is opened again, and the exposed substrate is carried out of the processing chamber.

JP 2018-159828 A

As described above, the exposure apparatus described in Patent Document 1 performs exposure processing in a low-oxygen atmosphere. Therefore, the atmosphere of the entire processing chamber where exposure is performed is replaced with an inert gas. However, it may take a long time until the inert gas is uniformly replaced. If the inert gas replacement is non-uniform, the precision of the exposure process will be degraded. In addition, if the time required for replacing the inert gas is prolonged, the efficiency of the exposure process is lowered.

SUMMARY OF THE INVENTION An object of the present invention is to provide an exposure apparatus capable of improving the accuracy and efficiency of exposure processing.

(1) An exposure apparatus according to the present invention is an exposure apparatus that performs exposure processing on a substrate, and includes: a peripheral wall member that forms a processing space capable of accommodating a substrate and has an upper opening; A light emitting portion having an emitting surface capable of emitting light, and a substrate supporting portion supporting a substrate in a processing space below the light emitting portion during exposure by the light emitting portion. and an opening for communicating the flow path and the processing space, the opening having a first side surface and a second side surface facing each other, the first side surface and the second side surface The distance between the side surface of 2 gradually increases from the downstream end of the flow path toward the processing space, and a collision surface is provided on which the inert gas flowing out from the downstream end of the flow path to the opening collides, The collision surface is located above the substrate supported by the substrate support during exposure.

According to the above configuration, the inert gas reaches the downstream end through the channel formed in the peripheral wall member. The inert gas supplied to the opening from the downstream end collides with the collision surface above the substrate, and then flows into the processing space along the first side surface and the second side surface. In this case, the atmosphere between the light emitting portion and the substrate can be uniformly replaced. Also, there is no need to replace the atmosphere in the entire processing space. Therefore, the time required for replacement can be shortened. As a result, it is possible to improve the efficiency and accuracy of the exposure process.

(2) The peripheral wall member may have a cylindrical shape. In this case, the processing space defined by the cylindrical peripheral wall member does not have a corner where the gas stays. Therefore, when replacing the atmosphere in the processing space with the inert gas, a smooth gas flow is formed along the inner peripheral surface of the peripheral wall member. As a result, the time required for replacement can be further shortened, and the amount of inert gas used for replacement can be suppressed.

(3) The peripheral wall member may include an exhaust section for exhausting the atmosphere of the processing space. In this case, the atmosphere in the processing space is exhausted by the exhaust section, so that the flow of the inert gas can be more easily formed in the processing chamber. Therefore, the time required for uniform replacement of the atmosphere on the substrate in the processing space can be further shortened.

(4) The collision surface is configured by part of the lower surface of the light emitting section. In this case, by using a part of the lower surface of the light emitting portion that closes the upper opening of the peripheral wall member as the collision surface, it is not necessary to provide a separate collision surface. Therefore, the manufacturing cost of the exposure apparatus can be suppressed.

(5) The collision surface may be provided within the peripheral wall member. In this case, by using a part of the peripheral wall member as the collision surface, there is no need to provide a separate collision surface. Therefore, the manufacturing cost of the exposure apparatus can be suppressed.

(6) A lower opening is formed in the peripheral wall member. an elevation drive unit for controlling the closing member such that the material moves to a first position below the lower opening and the closing member moves to a second position where the closing member closes the lower opening during exposure of the substrate. good too.

In this case, the closing member moves to the first position below the processing space when the substrate is transferred. Thereby, the substrate can be easily transferred between the outside and the substrate supporting portion. Also, during exposure of the substrate, the closing member moves to the second position above the first position. Thereby, the lower opening can be easily closed.

(7) The substrate supporting portion may be provided on the upper surface of the closing member. In this case, the substrate supporting portion moves vertically together with the closing member. Accordingly, the substrate can be easily placed on the substrate support portion from the outside of the exposure apparatus below the processing space. Further, when the substrate is exposed, the substrate is brought closer to the light emitting portion by moving the substrate supporting portion upward. Thereby, the efficiency of the exposure process of the substrate can be further improved.

According to the present invention, it is possible to improve the accuracy and efficiency of exposure processing.

1 is a schematic cross-sectional view showing the configuration of an exposure apparatus according to an embodiment of the present invention; FIG. 2 is a perspective view for explaining the operation of some components of the exposure apparatus of FIG. 1; FIG. FIG. 2 is a schematic plan view of the peripheral wall member of FIG. 1; FIG. 4 is an enlarged perspective view showing the configuration of the first gas flow path in FIG. 3; FIG. 4 is an enlarged perspective view showing the configuration of a second gas flow path in FIG. 3; FIG. 4 is a schematic side view for explaining the basic operation of the exposure device during exposure processing; FIG. 4 is a schematic side view for explaining the basic operation of the exposure device during exposure processing; FIG. 4 is a schematic side view for explaining the basic operation of the exposure device during exposure processing; FIG. 4 is a schematic side view for explaining the basic operation of the exposure device during exposure processing; FIG. 4 is a schematic side view for explaining the basic operation of the exposure device during exposure processing; FIG. 4 is a schematic side view for explaining the basic operation of the exposure device during exposure processing; 2 is a flow chart showing a series of processes performed by the controller in FIG. 1; 2 is a flow chart showing a series of processes performed by the controller in FIG. 1; FIG. 4 is a schematic plan view showing some components of an exposure apparatus used for simulation of a comparative example; FIG. 3 is a diagram showing comparison results of Example 1, Example 2, and Comparative Example 1; 2 is a schematic block diagram showing an example of a substrate processing apparatus including the exposure apparatus of FIG. 1; FIG. and FIG. 11 is a schematic cross-sectional view showing the configuration of an exposure apparatus according to another embodiment.

An exposure apparatus according to an embodiment of the present invention will be described below with reference to the drawings. In the following description, the substrate means an FPD (Flat Panel Display) substrate used in a liquid crystal display device or an organic EL (Electro Luminescence) display device or the like, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, or a magneto-optical disk substrate. A substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like. It should be noted that the substrate described below is a substrate having at least a portion of a circular shape, for example, a circular substrate formed with a notch or an orientation flat. It is also assumed that a film modified by vacuum ultraviolet rays is formed on the main surface of the substrate.

Furthermore, in the exposure apparatus described below, the main surface of the substrate faces upward and the back surface of the substrate (the surface opposite to the main surface) faces downward. UV rays (hereinafter referred to as vacuum UV rays) having a wavelength of about 120 nm or more and about 230 nm or less are irradiated from the substrate. Therefore, in the following description, the top surface of the substrate is the main surface of the substrate, and the bottom surface of the substrate is the back surface of the substrate.

[1] Configuration of Exposure Apparatus FIG. 1 is a schematic cross-sectional view showing the configuration of an exposure apparatus according to an embodiment of the present invention, and FIG. It is a perspective view for explaining. As shown in FIG. 1, the exposure apparatus 100 includes a light emitting section 10, a peripheral wall member 20, a lower lid member 30, a substrate support mechanism 40, a gas supply system 51, a gas discharge system 52, an elevation driving section 53, and a control section 60. include.

In the exposure apparatus 100 , a processing space 20</b>S for exposing the substrate W is formed by the peripheral wall member 20 . Specifically, the peripheral wall member 20 has a flat cylindrical shape. A space surrounded by the inner peripheral surface of the peripheral wall member 20 is used as a processing space 20S. Moreover, the peripheral wall member 20 has an annular flat upper end surface 23 and a lower end surface 24 . An upper opening 21 is formed inside the upper end surface 23 and a lower opening 22 is formed inside the lower end surface 24 .

A light emitting portion 10 is provided above the peripheral wall member 20 so as to close the upper opening 21 of the peripheral wall member 20 . The light emitting section 10 includes a housing 11 , a transparent plate 13 , a planar light source section 14 and a power supply device 15 .

The housing 11 has a bottom wall portion 11a, a rectangular cylindrical peripheral wall portion 11b, and a ceiling portion 11c. An internal space 10S is formed by the bottom wall portion 11a, the peripheral wall portion 11b, and the ceiling portion 11c. In FIG. 2, only the housing 11 of the light emitting section 10 is indicated by a dashed line.

As shown in FIG. 1, a lower opening 12 is formed in the bottom wall portion 11a of the housing 11. As shown in FIG. The lower opening 12 has, for example, a circular shape. The inner diameter of the lower opening 12 is slightly smaller than the inner diameter of the peripheral wall member 20 . The light-transmitting plate 13 is attached to the bottom wall portion 11 a so as to block the lower opening 12 . In this embodiment, the transparent plate 13 is a quartz glass plate. As the material of the translucent plate 13, another material that transmits vacuum ultraviolet rays may be used.

The light source section 14 and the power supply device 15 are accommodated in the internal space 10S of the housing 11 . The light source unit 14 has a configuration in which a plurality of bar-shaped light source elements LE for emitting vacuum ultraviolet rays are horizontally arranged at predetermined intervals. Each light source element LE may be, for example, a xenon excimer lamp, another excimer lamp, a deuterium lamp, or the like. The power supply device 15 supplies power to the light source section 14 .

The upper end surface 23 of the peripheral wall member 20 is connected to the lower surface of the bottom wall portion 11a such that the lower surface of the light transmitting plate 13 faces the processing space 20S as the output surface 13S. With such a configuration, the vacuum ultraviolet rays generated from the light source section 14 are emitted into the processing space 20S through the emission surface 13S.

The lower lid member 30 is provided below the peripheral wall member 20 so as to be vertically movable. Further, the lower lid member 30 is configured to be able to close and open the lower opening 22 by moving in the vertical direction. Hereinafter, the position where the lower lid member 30 closes the lower opening 22 is called the lid closed position, and the position where the lower lid member 30 opens the lower opening 22 is called the lid open position. The lift drive unit 53 includes, for example, a stepping motor, and moves the lower lid member 30 vertically between the lid closed position and the lid open position, as indicated by the thick dotted arrow in FIG.

The lower lid member 30 has a flat upper surface 31 facing the emission surface 13S of the light emission section 10 . A seal member 39 is attached to the upper surface 31 of the lower lid member 30 as shown in FIG. When the lower lid member 30 is in the lid closed position, the seal member 39 is in close contact with the portion of the lower end surface 24 of the peripheral wall member 20 surrounding the lower opening 22 . The sealing member 39 is made of, for example, an O-ring.

A plurality of (three in this example) supporting members 38 configured to support the lower surface of the substrate W are attached to the upper surface 31 of the lower lid member 30 . Each support member 38 is a spherical proximity ball and is made of ceramic, for example.

Furthermore, a plurality of through holes 32 corresponding to a plurality of support pins 41, which will be described later, are formed in the central portion of the lower lid member 30. As shown in FIG. Further, a plurality of storage tubes 33 are provided so as to extend downward for a certain distance in the portion where the plurality of through holes 32 are formed on the lower surface of the lower lid member 30 . Each accommodation tube 33 has the same inner diameter as the through hole 32 . An inward flange is formed at the lower end of the accommodation tube 33 so as to extend from the inner peripheral surface of the accommodation tube 33 toward its axis.

The substrate support mechanism 40 includes a plurality (three in this example) of support pins 41 and pin connecting members 42 . Each support pin 41 includes a tip member 41a and a support shaft 41b. The plurality of support shafts 41b are provided so as to extend in the vertical direction, and are inserted into the plurality of through holes 32 and the plurality of storage tubes 33 of the lower lid member 30, respectively. The pin connecting member 42 connects the lower end portions of the plurality of support shafts 41 b and is fixed to the base portion (not shown) of the exposure apparatus 100 . The plurality of tip members 41a are provided at upper end portions of the plurality of support shafts 41b, respectively, and are made of ceramic or resin, for example.

When the lower lid member 30 is in the lid open position, the plurality of tip members 41a (the upper ends of the plurality of support pins 41) are positioned above the upper ends of the plurality of support members 38 attached to the lower lid member 30. . Thereby, as shown in FIG. 1, the substrate W to be processed is supported on the plurality of tip members 41a. At this time, the upper surface of the substrate W faces the emission surface 13S of the light emission section 10. As shown in FIG.

When the lower lid member 30 moves upward from the lid open position to the lid closed position, the plurality of tip members 41 a of the substrate support mechanism 40 are accommodated inside the storage tube 33 through the plurality of through holes 32 of the lower lid member 30 . be done. Therefore, when the lower lid member 30 is in the lid closed position, the plurality of tip members 41a (the upper ends of the plurality of support pins 41) are positioned below the upper ends of the plurality of support members 38 attached to the lower lid member 30. To position. Thereby, the substrate W supported on the tip members 41 a is transferred to the support members 38 .

Here, each tip member 41a of the substrate support mechanism 40 is formed with an outward flange having a diameter larger than that of the support shaft 41b. On the other hand, a seal member (not shown) capable of coming into contact with the lower surface of the outward flange of the tip member 41a is provided on the upper surface of the inward flange formed at the lower end of each of the plurality of storage tubes 33 . . These sealing members are, for example, O-rings. Each sealing member also controls the flow of gas between the processing space 20S, the inner space of the through hole 32, the inner space of the storage tube 33, and the outside of the processing space 20S when the lower lid member 30 is in the lid closed position. block the Thereby, the processing space 20S is sealed.

The gas supply system 51 of FIG. 1 includes a pipe 51a, an inert gas supply source (not shown), a valve (not shown), and the like. The gas exhaust system 52 also includes a pipe 52a, a valve (not shown), an exhaust facility (not shown), and the like.

Inside the peripheral wall member 20, a first gas flow path 25 and a second gas flow path 26 are formed to communicate the outside of the peripheral wall member 20 and the processing space 20S. Details of the peripheral wall member 20 will be described later.

A pipe 51 a extending from a gas supply system 51 is connected to the first gas flow path 25 . A pipe 52 a extending from a gas discharge system 52 is connected to the second gas flow path 26 .

The gas supply system 51 supplies an inert gas from an inert gas supply source (not shown) to the processing space 20S through the pipe 51a and the first gas flow path 25 . In this embodiment, nitrogen gas is used as the inert gas. The gas discharge system 52 discharges the atmosphere of the processing space 20S of the peripheral wall member 20 to the outside of the peripheral wall member 20 through the second gas flow path 26 and the pipe 52a.

The pipe 52a is provided with an oxygen concentration meter 52b. The oxygen concentration meter 52b measures the oxygen concentration of the gas flowing through the pipe 52a as the oxygen concentration in the processing space 20S, and provides the measured oxygen concentration to the control unit 60 at predetermined intervals. The oxygen concentration meter 52b is, for example, a galvanic cell type oxygen sensor or a zirconia type oxygen sensor.

The control unit 60 is composed of, for example, a CPU (Central Processing Unit) and a memory. Various control programs are stored in the memory of the control unit 60 . By executing the control program stored in the memory by the CPU of the control unit 60, the operation of each component in the exposure apparatus 100 is controlled as indicated by the dashed-dotted arrows in FIG.

[2] Structure of Peripheral Wall Member 20 FIG. 3 is a schematic plan view of the peripheral wall member 20 of FIG. In FIG. 3, the outer shape of the housing 11 of the light emitting section 10 and the lower opening 12 are indicated by dashed lines. Further, in FIG. 3, a dot pattern is attached to the substrate W, and a dot pattern is attached to the peripheral wall member 20 so as to facilitate understanding of the positional and size relationship between the substrate W accommodated in the processing space 20S and the peripheral wall member 20. It is hatched.

As shown in FIG. 3, during the exposure process, the substrate W is supported by the substrate support mechanism 40 (FIG. 1) so as to be positioned substantially in the center of the processing space 20S. In this state, the inner peripheral surface of the peripheral wall member 20 faces the outer peripheral edge of the substrate W. As shown in FIG. Also, the distance between the outer peripheral edge of the substrate W and the inner peripheral surface of the peripheral wall member 20 is kept substantially constant.

Also, in FIG. 3, three through holes 32 formed in the lower lid member 30 and three support members 38 attached to the lower lid member 30 are indicated by dotted lines. The three through-holes 32 are formed at equal intervals on a virtual circle cr1 with the center 30C of the lower lid member 30 as a reference in plan view. On the other hand, the three support members 38 are formed at regular intervals on a virtual circle cr2 with the center 30C of the lower lid member 30 as a reference in plan view. Here, the virtual circle cr2 is larger than the virtual circle cr1 and has a size of about half the diameter of the substrate W. FIG. Accordingly, when the substrate W is supported by the three support members 38 , the substrate W is more stably supported than when the substrate W is supported by the three through holes 32 .

Here, when the diameter D1 of the substrate W to be exposed by the exposure apparatus 100 is 300 mm, the inner diameter D2 of the peripheral wall member 20 is, for example, greater than 300 mm and less than or equal to 400 mm, and more than 300 mm and less than or equal to 350 mm. Preferably, it is greater than 300 mm and less than or equal to 320 mm. The inner diameter D2 of the peripheral wall member 20 of this example is 310 mm.

Moreover, the height of the peripheral wall member 20 is, for example, greater than 5 mm and 50 mm or less, preferably greater than 5 mm and 20 mm or less. The height of the peripheral wall member 20 in this example is 10 mm. The height of a first side surface 27a, a second side surface 27b, a third side surface 28a, and a fourth side surface 28b, which will be described later, of the peripheral wall member 20 is, for example, greater than 1 mm and 10 mm or less, and greater than 1 mm and 5 mm or less. is preferred. The height of the first side surface 27a, the second side surface 27b, the third side surface 28a and the fourth side surface 28b of the peripheral wall member 20 of this example is 2 mm.

As described above, the first gas flow path 25 and the second gas flow path 26 are formed inside the peripheral wall member 20 . 4 is an enlarged perspective view showing the configuration of the first gas flow path 25 of FIG. 3. FIG. As shown in FIG. 4, the first gas channel 25 includes an upstream channel portion 25A and a downstream channel portion 25B and has an L-shaped cross section.

Specifically, the upstream flow path portion 25A extends horizontally inward from the lower portion of the outer surface of the peripheral wall member 20 . The downstream channel portion 25B vertically extends upward from the inner end of the upstream channel portion 25A to the upper end surface 23 of the peripheral wall member 20 . The outer end of the upstream channel portion 25A becomes the upstream end 25a of the first gas channel 25. As shown in FIG. An upper end portion of the downstream flow path portion 25B serves as a downstream end portion 25b of the first gas flow path 25. As shown in FIG.

A pipe 51 a is connected to the upstream end portion 25 a of the first gas flow path 25 . In this case, the inert gas supplied from the pipe 51a to the upstream end portion 25a of the first gas channel 25 is guided horizontally from the outside to the inside within the upstream channel portion 25A. After that, the inert gas is supplied upward from below in the downstream flow path portion 25B and ejected upward from the downstream end portion 25b of the first gas flow path 25B.

A bottomed first opening 27 is formed in the upper end surface 23 of the peripheral wall member 20 to allow the first gas flow path 25 and the processing space 20S to communicate with each other. Specifically, the first opening 27 has a first side surface 27a and a second side surface 27b facing each other across a space above the downstream end 25b of the first gas flow path 25 . The distance between the first side surface 27a and the second side surface 27b gradually increases from the downstream end 25b of the first gas flow path 25 toward the processing space 20S. In this example, the first and second side surfaces 27a and 27b are formed flat, but the embodiment is not limited to this. The first and second side surfaces 27a and 27b may be curved, for example.

Above the downstream end 25 b of the first gas flow path 25 is provided a collision surface 29 against which the inert gas jetted out to the first opening 27 collides. The collision surface 29 is located above the upper surface of the substrate W supported by the plurality of supporting members 38 during exposure. In this example, the bottom wall portion 11 a of the housing 11 of the light emitting portion 10 in FIG. 1 is used as the collision surface 29 .

The inert gas ejected from the downstream end 25b of the first gas flow path 25 collides with the collision surface 29 and is guided to the first and second side surfaces 27a and 27b of the first opening 27. It is supplied to the processing space 20S. In this case, as indicated by arrows in FIG. 3, the inert gas diffuses in the processing space 20S so as to expand in the horizontal plane. Thereby, the inert gas can be uniformly supplied to the space between the light emitting part 10 and the substrate W in the processing space 20S in a short time.

FIG. 5 is an enlarged perspective view showing the configuration of the second gas flow path 26 of FIG. As shown in FIG. 5, the upper end surface 23 of the peripheral wall member 20 is formed with a bottomed second opening 28 that allows communication between the second gas flow path 26 and the processing space 20S. In this example, the first opening 27 and the second opening 28 face each other across the processing space 20S (see FIG. 3).

The second opening 28 has a third side 28a and a fourth side 28b facing each other across a space above the upstream end 26a of the second gas flow path 26 . The distance between the third side 28a and the fourth side 28b gradually decreases from the processing space 20S toward the downstream end 25b of the second gas flow path 26. As shown in FIG. In this example, the third and fourth side surfaces 28a, 28b are formed flat, but the embodiment is not limited to this. The third and fourth side surfaces 28a, 28b may be curved, for example.

Further, above the upstream end 26a of the second gas flow path 26, the bottom wall portion 11a of the housing 11 of the light emitting portion 10 in FIG. 1 is positioned. By operating the gas discharge system 52 of FIG. 1, the atmosphere in the processing space 20S is discharged along the bottom wall 11a of the housing 11 and the third and fourth side surfaces 28a and 28b of the second opening 28 to the upstream end. It is led into the second gas flow path 26 from 26a.

The second gas channel 26 includes an upstream channel portion 26A and a downstream channel portion 26B, and has an L-shaped cross section. Specifically, the upstream flow path portion 26A vertically extends downward from the upper end surface 23 of the peripheral wall member 20 . The downstream channel portion 26B extends horizontally from the lower end of the upstream channel portion 26A to the outer surface of the peripheral wall member 20 . An upper end portion of the upstream flow path portion 26A serves as an upstream end portion 26a of the second gas flow path 26. As shown in FIG. The outer end of the downstream channel portion 26B becomes the downstream end 26b of the second gas channel 26. As shown in FIG.

A pipe 52 a is connected to the downstream end 26 b of the second gas flow path 26 . In this case, the inert gas from the second opening 28 is directed downward from the upper upstream end 26a within the upstream flow path portion 26A. After that, the inert gas is horizontally guided from the inside to the outside in the downstream flow path portion 26B and discharged to the pipe 52a. Thereby, the inert gas flow can be more easily formed in the processing space 20S. Therefore, the time required for uniform replacement of the atmosphere on the substrate W in the processing space 20S can be shortened.

[3] Basic operation of the exposure apparatus 100 during exposure processing As described above, in the exposure apparatus 100 according to the present embodiment, the substrate W to be processed is irradiated with vacuum ultraviolet rays having a wavelength of, for example, 172 nm. The exposure process is performed by . Here, when a large amount of oxygen exists on the path of the vacuum ultraviolet rays toward the substrate W, the oxygen molecules absorb the vacuum ultraviolet rays and separate into oxygen atoms, and the separated oxygen atoms recombine with other oxygen molecules. Ozone is generated by In this case, the vacuum ultraviolet rays reaching the substrate W are attenuated. Attenuation of vacuum ultraviolet rays is greater than that of ultraviolet rays with wavelengths longer than about 230 nm. Therefore, in the exposure apparatus 100 according to the present embodiment, the substrate W is irradiated with the vacuum ultraviolet rays in the processing space 20S above the substrate W in which the oxygen concentration is kept low. The basic operation of exposure apparatus 100 during exposure processing will be described below.

6 to 11 are schematic side views for explaining the basic operation of exposure apparatus 100 during exposure processing. 6 to 11, the lid open position pa1 and the lid closed position pa2 are respectively indicated by the height positions of the upper surface 31 (FIG. 1) of the lower lid member 30. FIG.

Assume that the lower lid member 30 is in the lid closed position pa2 in the initial state before the exposure apparatus 100 is powered on. When the exposure apparatus 100 is powered on, the lower lid member 30 moves to the lid open position pa1 as indicated by the outline arrow a1 in FIG.

Next, the substrate W is carried into the exposure apparatus 100 from the outside while the tip members 41 a of the substrate support mechanism 40 are positioned below the peripheral wall member 20 . In this case, as indicated by an outline arrow a2 in FIG. 7, the substrate W transported by a transporting device (not shown) moves from the side of the exposure device 100 into the space between the peripheral wall member 20 and the plurality of tip members 41a. It is inserted and rests on a plurality of tip members 41a. In this state, the upper surface of the substrate W faces the emission surface 13S of the light emission section 10 across the processing space 20S. The transport device is, for example, the transport device 220 shown in FIG. 16, which will be described later.

Next, as indicated by an outline arrow a3 in FIG. 8, the lower lid member 30 moves to the lid closed position pa2. As a result, the lower opening 22 of the peripheral wall member 20 is closed by the lower lid member 30 while the substrate W is accommodated in the processing space 20S. Further, the substrate W is supported by a plurality of supporting members 38 within the processing space 20S. Furthermore, the lower ends of the plurality of storage tubes 33 provided in the lower lid member 30 are closed by the plurality of tip members 41a and a sealing member (not shown). Thereby, the processing space 20S is sealed.

In this state, the inert gas is supplied from the gas supply system 51 in FIG. be. Therefore, the inert gas ejected from the downstream end 25 b of the first gas flow path 25 collides with the collision surface 29 . The collision with the collision surface 29 changes the flow direction of the inert gas from the vertical direction to the horizontal direction. After that, the inert gas is supplied into the processing space 20S along the first side 27a and the second side 27b of the first opening 27 in FIG.

Also, the atmosphere in the processing space 20S is discharged to the outside of the exposure apparatus 100 through the second opening 28 and the second gas flow path 26 by the gas discharge system 52 of FIG. As a result, the atmosphere in the processing space 20S is gradually replaced with the inert gas, and the oxygen concentration in the processing space 20S decreases.

After that, when the oxygen concentration in the processing space 20S decreases to a predetermined concentration (hereinafter referred to as the target oxygen concentration), as indicated by the thick solid arrow in FIG. The upper surface of the substrate W is irradiated with vacuum ultraviolet rays through the emission surface 13S. Here, the target oxygen concentration is set so that the concentration of ozone in the vicinity of the peripheral wall member 20 becomes equal to or lower than the previously allowed concentration (0.1 ppm) when the lower opening 22 of the peripheral wall member 20 is opened after the exposure process. , for example 1%. Whether or not the oxygen concentration in the processing space 20S has decreased to the target oxygen concentration can be determined, for example, based on the signal output from the oxygen concentration meter 52b in FIG. While the substrate W is irradiated with the vacuum ultraviolet rays, the operation of replacing the atmosphere in the processing space 20S with the inert gas may be continued or stopped.

When the exposure amount of the vacuum ultraviolet rays irradiated onto the substrate W (the energy of the vacuum ultraviolet rays irradiated per unit area on the substrate) reaches a predetermined set exposure amount, the irradiation of the upper surface of the substrate W with the vacuum ultraviolet rays is stopped. be done. By exposing the upper surface of the substrate W in this way, the film formed on the substrate W is modified according to the predetermined exposure conditions.

Here, it is assumed that the illuminance of the vacuum ultraviolet rays irradiated to the substrate W under the environment of the target oxygen concentration (the power of the vacuum ultraviolet rays irradiated per unit area on the substrate) is known. In this case, the exposure amount of the vacuum ultraviolet rays applied to the substrate W is determined based on the illuminance of the vacuum ultraviolet rays and the irradiation time of the vacuum ultraviolet rays. In the present embodiment, whether or not the exposure amount of the vacuum ultraviolet rays applied to the substrate W has reached the predetermined set exposure amount is determined by the time corresponding to the set exposure amount ( exposure time) has elapsed.

After the irradiation of the upper surface of the substrate W with the vacuum ultraviolet rays is stopped, the lower lid member 30 moves to the lid open position pa1 as indicated by the outline arrow a4 in FIG. As a result, the lower opening 22 of the peripheral wall member 20 is opened, and the substrate W is taken out below the processing space 20S while being supported on the plurality of tip members 41a.

Finally, as indicated by white arrows a5 in FIG. 11, the substrate W supported on the plurality of tip members 41a is received by a transport device (not shown) and transported to the side of the exposure apparatus 100. As shown in FIG. The transport device is, for example, the transport device 220 shown in FIG. 16, which will be described later.

[4] Series of Processing Performed by Control Unit 60 During Exposure Processing FIGS. 12 and 13 are flowcharts showing a series of processing performed by the control unit 60 in FIG. A series of processes shown in FIGS. 12 and 13 are started by, for example, switching the power supply of exposure apparatus 100 from an off state to an on state. First, the control unit 60 moves the lower lid member 30 to the lid open position pa1 by controlling the elevation driving unit 53 of FIG. 1 (step S1).

Next, the controller 60 determines whether or not the substrate W is placed on the tip members 41a (step S2). For example, this determination may be performed based on the output from a sensor (for example, a photoelectric sensor or the like) that detects the presence or absence of the substrate W on the substrate support mechanism 40 provided in the exposure apparatus 100 . Alternatively, it may be performed based on a command signal from a control device external to exposure apparatus 100 (for example, control device 210 in FIG. 16, which will be described later).

When the substrate W is not placed on the tip members 41 a , the controller 60 repeats the process of step S<b>2 until the substrate W is placed on the tip members 41 a of the support pins 41 . On the other hand, when the substrate W is placed on the plurality of tip end members 41a, the control unit 60 controls the elevation driving unit 53 of FIG. 1 to move the lower lid member 30 to the lid closed position pa2 (step S3).

Next, the controller 60 exhausts the atmosphere in the processing space 20S of the peripheral wall member 20 by controlling the gas exhaust system 52 of FIG. 1 (step S4). Further, the control unit 60 supplies the inert gas into the processing space 20S of the peripheral wall member 20 by controlling the gas supply system 51 of FIG. 1 (step S5). Either one of the processes of steps S4 and S5 may be performed first, or may be performed simultaneously.

Next, the control unit 60 determines whether the oxygen concentration in the processing space 20S has decreased to the target oxygen concentration based on the oxygen concentration measured by the oxygen concentration meter 52b of FIG. 1 (step S6).

If the oxygen concentration in the processing space 20S does not decrease to the target oxygen concentration, the control section 60 repeats the process of step S6 until the oxygen concentration in the processing space 20S reaches the target oxygen concentration. On the other hand, when the oxygen concentration in the processing space 20S decreases to the target oxygen concentration, the control unit 60 controls the light emitting unit 10 of FIG. is emitted (step S7). As a result, the substrate W is irradiated with the vacuum ultraviolet rays, and the film formed on the substrate W is modified.

Next, the control unit 60 determines whether or not the exposure time has elapsed since the light source unit 14 started emitting vacuum ultraviolet rays (step S8). If the exposure time has not elapsed, the control unit 60 repeats the process of step S8 until the exposure time has elapsed. On the other hand, when the exposure time has elapsed, the control unit 60 stops the emission of vacuum ultraviolet rays from the light emission unit 10 (step S9).

Next, the controller 60 stops exhausting the atmosphere in the processing space 20S by controlling the gas exhaust system 52 of FIG. 1 (step S10). Further, the control unit 60 stops the supply of the inert gas into the processing space 20S by controlling the gas supply system 51 of FIG. 1 (step S11). Some of the processes of steps S9, S10, and S11 may be performed first, or all of the processes may be performed simultaneously.

Next, the control section 60 moves the lower lid member 30 to the lid open position pa1 by controlling the elevation driving section 53 of FIG. 1 (step S12). After that, the control unit 60 determines whether or not the substrate W has been transported from above the tip members 41a (step S13). Similar to the processing in step S2, for example, a sensor (for example, a photoelectric sensor or the like) that detects the presence or absence of the substrate W on the substrate support mechanism 40 is provided in the exposure apparatus 100, and this determination is performed based on the output from the sensor. may be broken. Alternatively, it may be performed based on a command signal from a control device external to exposure apparatus 100 (for example, control device 210 in FIG. 16, which will be described later). When the substrate W is not transported, the control section 60 repeats the process of step S13 until the substrate W is transported. On the other hand, when the substrate W is transported, the controller 60 returns to the process of step S2.

[5] Examples and Comparative Examples In Examples 1 and 2, a simulation of uniformly replacing the atmosphere in the processing space 20S with nitrogen gas was performed using the peripheral wall member 20 of the above-described embodiment. In Comparative Example 1, a simulation of uniformly replacing the atmosphere in the processing space 20S with nitrogen gas was performed using the peripheral wall member 20A shown in FIG. In the simulation, the flow rate of nitrogen gas, the supply time of nitrogen gas, and the oxygen concentration after replacement were compared. The nitrogen gas is supplied and discharged at the same time, and the amount of nitrogen gas supplied and the amount of discharge of the atmosphere in the processing space 20S are equal.

FIG. 14 is a schematic plan view showing constituent elements of a peripheral wall member 20A in a comparative example. As shown in FIG. 14, the peripheral wall member 20A of the comparative example does not include the first opening 27 and the second opening . Also, third and fourth gas flow paths 25C and 26C are provided instead of the first and second gas flow paths 25 and 26, respectively. The thickness, height, and inner diameter D2 of the peripheral wall member 20A are the same as the thickness, height, and inner diameter D2 of the peripheral wall member 20 of the first and second embodiments, respectively.

The third and fourth gas flow paths 25C and 26C are through holes formed from the outer peripheral surface to the inner peripheral surface of the peripheral wall member 20A, and communicate the outside of the peripheral wall member 20A and the processing space 20S. Also, the third and fourth gas flow paths 25C and 26C face each other across the processing space 20S. Nitrogen gas is supplied into the processing space 20S through the third gas flow path 25C, and the atmosphere in the processing space 20S is discharged through the fourth gas flow path 26C.

FIG. 15 is a diagram showing comparison results of Example 1, Example 2, and Comparative Example 1. FIG. As shown in FIG. 15, in Example 1, when the flow rate of the supplied nitrogen gas was 10 L/min, the oxygen concentration in the processing space 20S became 1% or less after 19 seconds. In Example 2, when the flow rate of the supplied nitrogen gas was 13 L/min, the oxygen concentration in the processing space 20S became 1% or less after 13 seconds. On the other hand, in Comparative Example 1, when the flow rate of the supplied nitrogen gas was 9 L/min, the oxygen concentration in the processing space 20S became 6% after 20 seconds.

From the comparison results of Example 1, Example 2, and Comparative Example 1, by using the peripheral wall member 20 of the above-described embodiment, it is possible to sufficiently reduce the oxygen concentration while shortening the time required for uniform replacement. It was confirmed that

[6] Effects (1) In the exposure apparatus 100 described above, the inert gas passes through the first gas flow path 25 formed in the peripheral wall member 20 and reaches the downstream end portion 25b. After colliding with the collision surface 29 above the substrate W, the inert gas supplied from the downstream end 25b to the first opening 27 flows along the first side 27a and the second side 27b into the processing space. Flow into 20S. In this case, the atmosphere between the exit surface 13S and the substrate W can be uniformly replaced. Moreover, it is not necessary to replace the entire atmosphere in the processing space 20S. Therefore, the time required for replacement can be shortened. As a result, it is possible to improve the efficiency and accuracy of the exposure process.

(2) In the exposure apparatus 100 described above, the peripheral wall member 20 has a cylindrical shape. In this case, the processing space 20S formed by the cylindrical peripheral wall member 20 does not have a corner where the gas stays. Therefore, when the atmosphere in the processing space 20</b>S is replaced with the inert gas, a smooth gas flow is formed along the inner peripheral surface of the peripheral wall member 20 . As a result, the time required for replacement can be shortened, and the inert gas used for replacement can be suppressed.

(3) In the exposure apparatus 100 described above, the peripheral wall member 20 has the second gas flow path 26 for discharging the atmosphere in the processing space 20S. In this case, the atmosphere in the processing space 20S is exhausted by the gas exhaust system 52, so that the flow of inert gas can be easily formed in the processing space 20S. Therefore, the time required for uniform replacement of the atmosphere on the substrate W in the processing space 20S can be shortened.

(4) As described above, by using the bottom wall portion 11a, which is a part of the lower surface of the light emitting portion 10 that closes the upper opening 21 of the peripheral wall member 20, as the collision surface 29, there is no need to separately provide the collision surface 29. . Therefore, the manufacturing cost of the exposure apparatus can be suppressed.

(5) In the exposure apparatus 100 described above, the lower lid member 30 moves to the lid opening position pa1 below the processing space 20S when the substrate W is loaded into and unloaded from the processing space 20S. Thereby, the substrate W can be easily transferred between the outside of the exposure apparatus 100 and the tip member 41 a of the substrate support mechanism 40 . Further, when the substrate W is exposed, the lower lid member 30 moves upward to the lid closing position pa2. Thereby, the lower opening 22 can be easily closed.

(6) In the exposure apparatus 100 described above, a plurality of support members 38 are provided on the upper surface 31 of the lower lid member 30 . In this case, the plurality of support members 38 move vertically together with the lower lid member 30 . Thereby, the substrate W can be placed on the plurality of support members 38 from the outside of the exposure apparatus 100 below the processing space 20S. Further, when the substrate W is exposed, the plurality of support members 38 move upward, thereby bringing the substrate W closer to the emission surface 13S. Thereby, the efficiency of the exposure processing of the substrate W can be further improved.

[7] Substrate Processing Apparatus Equipped with Exposure Apparatus 100 of FIG. 1 FIG. 16 is a schematic block diagram showing an example of a substrate processing apparatus provided with the exposure apparatus 100 of FIG. As shown in FIG. 16 , the substrate processing apparatus 200 includes a control device 210 , a transport device 220 , a heat treatment device 230 , a coating device 240 and a developing device 250 in addition to the exposure device 100 .

The control device 210 includes, for example, a CPU and memory or a microcomputer, and controls operations of the exposure device 100 , the transport device 220 , the heat treatment device 230 , the coating device 240 and the development device 250 . The transport device 220 transports the substrate W between the exposure device 100 , the heat treatment device 230 , the coating device 240 and the development device 250 during processing of the substrate W by the substrate processing device 200 .

The heat treatment device 230 heats the substrate W before and after the coating process by the coating device 240 and the development process by the development device 250 . The coating device 240 coats the upper surface of the substrate W with a predetermined treatment liquid, thereby forming a film on the upper surface of the substrate W that is modified by vacuum ultraviolet rays. Specifically, the coating device 240 of this example coats the upper surface of the substrate W with the treatment liquid containing the induced self-assembly material. In this case, a pattern of two polymers is formed on the upper surface of the substrate W due to the microphase separation that occurs in the induced self-assembled material.

The exposure device 100 irradiates the upper surface of the substrate W on which the film is formed by the coating device 240 with vacuum ultraviolet rays. Thereby, the bond between the two types of polymer patterns formed on the substrate W is broken. The developing device 250 supplies the substrate W with a solvent as a developer for removing one of the two polymer patterns after exposure. As a result, a pattern made of the other polymer remains on the substrate W. FIG.

Note that the coating device 240 applies a predetermined treatment liquid to the substrate so that an SOC (Spin-On-Carbon) film is formed instead of the film containing the induced self-assembly material as the film to be modified by the vacuum ultraviolet rays. It may be applied to the upper surface of W. In this case, the SOC film can be modified by exposing the substrate W with the SOC film formed thereon to vacuum ultraviolet rays.

When the coating device 240 forms the SOC film, the coating device 240 may further form a resist film on the SOC film after the exposure processing. In this case, after the substrate W on which the resist film is formed is exposed by an exposure device provided outside the substrate processing apparatus 200, the developing device 250 may perform development processing on the substrate W after the exposure.

According to the exposure apparatus 100 described above, it is possible to improve the efficiency of the exposure process without lowering the cleanliness of the substrate W with a simple and compact configuration. Therefore, according to the substrate processing apparatus 200 of FIG. 15, the processing accuracy of the substrate W can be improved, and the manufacturing cost of the substrate W can be reduced.

[8] Other Embodiments (1) The exposure apparatus 100 according to the above embodiment is provided with the second gas flow path 26 for discharging the atmosphere in the processing space 20S. is not limited to

For example, a plurality of exhaust ports may be provided at positions opposed to the first gas channel 25 and the downstream end portion 25b of the first channel with the processing space 20S interposed therebetween. In this case, the atmosphere of the processing space 20S is exhausted through the plurality of exhaust ports, so that the inert gas flow can be more easily formed within the processing space 20S. Therefore, the time required for uniform replacement of the atmosphere on the substrate W in the processing space 20S can be shortened.

(2) In exposure apparatus 100 according to the above embodiment, first gas flow path 25 and second gas flow path 26 have an L-shaped cross section, but the present invention is not limited to this.

For example, the first gas flow path 25 and the second gas flow path 26 may be formed by holes vertically penetrating the peripheral wall member 20 from below to above.

(3) Although the second opening 28 and the second gas flow path 26 are formed in the exposure apparatus 100 according to the above embodiment, the present invention is not limited to this.

For example, like a fourth gas flow path 26C shown in FIG. 14, it may be formed by a through hole formed from the outer peripheral surface to the inner peripheral surface of the peripheral wall member 20. As shown in FIG.

(4) In the exposure apparatus 100 according to the above embodiment, the bottom wall portion 11a, which is a part of the lower surface of the light emitting portion 10 that closes the upper opening 21 of the peripheral wall member 20, serves as the collision surface 29. It is not limited to this.

For example, it may be formed on a part of the peripheral wall member 20 on the upper surface of the first opening 27 . In this case also, by forming a portion of the inside of the peripheral wall member 20 as the collision surface 29, there is no need to provide the collision surface 29 separately. Therefore, the manufacturing cost of the exposure apparatus 100 can be suppressed.

(5) In the exposure apparatus 100 according to the above embodiment, whether or not the oxygen concentration in the processing space 20S has decreased to the target oxygen concentration during exposure processing is determined based on the output of the oxygen concentration meter 52b. However, the invention is not so limited.

For example, when the time required for the oxygen concentration in the processing space 20S to reach the target oxygen concentration from the time when the lower opening 22 is closed (hereinafter referred to as the concentration reaching time) is known, the above determination may be performed based on the concentration arrival time. In this case, the oxygen concentration meter 52b becomes unnecessary, and the configuration of the exposure apparatus 100 is simplified.

(6) In the exposure apparatus 100 according to the above embodiment, the exposure process is performed while the substrate W housed in the processing space 20S is supported by the plurality of support members 38 attached to the lower lid member 30. However, the invention is not so limited. Instead of attaching the plurality of support members 38 to the lower lid member 30, the substrate support mechanism 40 may be provided so as to be vertically movable. FIG. 17 is a schematic cross-sectional view showing the configuration of exposure apparatus 100 according to another embodiment. Differences of the exposure apparatus 100 of FIG. 17 from the exposure apparatus 100 of FIG. 1 will be described.

In the exposure apparatus 100 of FIG. 17, the plurality of support members 38 (FIG. 1) and the plurality of storage tubes 33 (FIG. 1) are not attached to the lower lid member 30 . On the other hand, the substrate support mechanism 40 is provided so as to be vertically movable with respect to the base portion of the exposure apparatus 100 with the plurality of support pins 41 inserted into the plurality of through holes 32 of the lower cover member 30 . there is The exposure apparatus 100 of FIG. 17 further includes an elevation driving section 54 for vertically moving the substrate support mechanism 40 .

Here, the vertical position of the substrate support mechanism 40 when the upper ends of the plurality of support pins 41 are positioned within the processing space 20S is called a processing position, and the position a certain distance below the processing position is called a standby position.

The elevation drive unit 54 includes, for example, a stepping motor, and is configured to be able to vertically move the substrate support mechanism 40 between the processing position and the standby position. With such a configuration, in this example, the substrate W loaded from the outside of the exposure apparatus 100 is positioned at the substrate support mechanism 40 in a state where the lower lid member 30 is at the lid open position pa1 and the substrate support mechanism 40 is at the standby position. are received by a plurality of tip members 41a.

When the substrate W carried into the exposure apparatus 100 is received by the substrate support mechanism 40, the lower lid member 30 moves to the lid closing position pa2 and the substrate support mechanism 40 moves to the processing position. Thereby, the substrate W is accommodated in the processing space 20S. A substrate W supported by a plurality of tip members 41a is irradiated with vacuum ultraviolet rays.

When the exposure of the substrate W is completed, the lower lid member 30 moves to the lid open position pa1 and the substrate support mechanism 40 moves to the standby position. Thereby, the substrate W is taken out below the processing space 20S. Finally, the substrate W supported by the plurality of tip members 41 a is carried out of the exposure apparatus 100 .

In the above configuration, the plurality of distal end members 41a and the lower lid member 30 are configured to be able to close the plurality of through holes 32 when the lower lid member 30 and the substrate support mechanism 40 are at the lid closing position pa2 and the processing position, respectively. be done. Thereby, the sealed state of the processing space 20S during the exposure processing is ensured.

In the exposure apparatus 100 of FIG. 17, if the sealed state of the processing space 20S is ensured, the distance between the emission surface 13S of the light emission unit 10 and the substrate W may vary depending on the type of the substrate W and the content of the processing. distance can be adjusted. In this case, the exposure time can be shortened by reducing the distance between the exit surface 13S of the light exit section 10 and the substrate W. This makes it possible to improve the efficiency of exposure processing.

In the example of FIG. 17, the up-and-down drive units 53 and 54 are individually provided as a configuration for driving the lower lid member 30 and the substrate support mechanism 40, but the present invention is not limited to this. The exposure apparatus 100 of FIG. 17 may be provided with one elevation drive section capable of driving both the lower cover member 30 and the substrate support mechanism 40 instead of the elevation drive sections 53 and 54 .

The elevation drive section may include, for example, one motor and a first cam and a second cam provided on the rotating shaft of the motor. In this case, the first cam is configured to be able to move the lower lid member 30 up and down between the lid open position pa1 and the lid closed position pa2 by the rotational force generated by the motor. Also, the second cam is configured to be able to move the substrate support mechanism 40 up and down between the standby position and the processing position by the rotational force generated by the motor.

Alternatively, the elevation drive section may include, for example, one air cylinder and a rod-shaped shaft member. In this case, the lower lid member 30 and the substrate support mechanism 40 are attached to the shaft member. In this configuration, for example, the air cylinder vertically moves the other end of the shaft member while the one end of the shaft member is fixed. As a result, the lower lid member 30 moves up and down between the lid open position pa1 and the lid closed position pa2, and the substrate support mechanism 40 moves up and down between the standby position and the processing position.

According to the above configuration, the number of components of the exposure apparatus 100 can be reduced, and an increase in manufacturing cost of the exposure apparatus 100 can be suppressed.

(7) In the exposure apparatus 100 according to the above embodiment, the tip member 41a is provided in the substrate support mechanism 40 to seal the processing space 20S, but the present invention is not limited to this. For example, if extremely high airtightness is not required for the processing space 20S, the substrate support mechanism 40 may not be provided with the tip member 41a.

[9] Correspondence Between Each Component of the Claims and Each Element of the Embodiment An example of correspondence between each component of the claim and each element of the embodiment will be described below. In the above embodiment, the support member 38 is an example of the substrate support portion, the first gas channel 25 is an example of the channel, the gas exhaust system 52 is an example of the exhaust portion, and the light emitting portion 10 The bottom wall portion 11a is an example of a part of the lower surface of the light emitting portion, the lower lid member 30 is an example of the closing member, the lid opening position pa1 is an example of the first position, and the lid closing position pa2 is an example of the first position. 2 position example.

Various other elements having the structure or function described in the claims can be used as each component of the claims.

DESCRIPTION OF SYMBOLS 10... Light-projection part, 10S... Internal space, 11... Housing, 11a... Bottom wall part, 11b... Surrounding wall part, 11c... Ceiling part, 12, 22... Lower opening, 13... Translucent plate, 13S... Emission surface, 14 Light source unit 15 Power supply device 20, 20A Peripheral wall member 20S Processing space 21 Upper opening 23 Upper end surface 24 Lower end surface 25 First gas flow path 25A, 26A Upstream Channel portions 25B, 26B... Downstream channel portion 25C... Third gas channel 25a, 26a... Upstream end 25b, 26b... Downstream end 26... Second gas channel 26C... Third gas channel 4 gas passages, 27... first opening, 27a... first side, 27b... second side, 28... second opening, 28a... third side, 28b... fourth side, 29 Collision surface 30 Lower lid member 30C Center 31 Upper surface 32 Through hole 33 Accommodating tube 38 Support member 39 Seal member 40 Substrate support mechanism 41 Support pin Reference Signs List 41a Tip member 41b Support shaft 42 Pin connection member 51 Gas supply system 51a, 52a Piping 52 Gas exhaust system 52b Oxygen concentration meter 53, 54 Elevation drive unit 60 Control unit 100 Exposure device 200 Substrate processing device 210 Control device 220 Transport device 230 Heat treatment device 240 Coating device 250 Developing device cr1, cr2 Virtual circle LE Light source element , pa1... Lid open position, pa2... Lid closed position

Claims (7)

An exposure apparatus for performing exposure processing on a substrate,
a peripheral wall member forming a processing space capable of accommodating a substrate and having an upper opening;
a light emitting portion that closes the upper opening and has an emitting surface capable of emitting vacuum ultraviolet rays;
a substrate supporting portion that supports a substrate in the processing space below the light emitting portion during exposure by the light emitting portion;
The peripheral wall member has a channel for guiding an inert gas from below to an upward direction, and an opening for communicating the channel and the processing space,
the opening has a first side and a second side facing each other;
the distance between the first side and the second side gradually increases from the downstream end of the channel toward the processing space;
A collision surface is provided on which the inert gas flowing out from the downstream end of the flow path to the opening collides, and the collision surface is positioned above the substrate supported by the substrate support during exposure. Exposure equipment. 2. The exposure apparatus according to claim 1, wherein said peripheral wall member has a cylindrical shape. 3. The exposure apparatus according to claim 1, wherein said peripheral wall member includes an exhaust section for exhausting an atmosphere of said processing space. 4. The exposure apparatus according to any one of claims 1 to 3, wherein said collision surface is constituted by part of the lower surface of said light emitting section. 4. The exposure apparatus according to claim 1, wherein said collision surface is provided within said peripheral wall member. A lower opening is formed in the peripheral wall member,
The exposure device is
a closing member configured to be able to close and open the lower opening;
The closing member moves to a first position below the lower opening when the substrate is transferred between the outside and the substrate support, and the closing member closes the lower opening when the substrate is exposed. 6. The exposure apparatus according to any one of claims 1 to 5, further comprising an up-and-down driving section that controls the closing member to move to position 2. 7. The exposure apparatus according to claim 6, wherein said substrate supporting portion is provided on an upper surface of said closing member.

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