JP7331107B2 - Components for semiconductor manufacturing equipment - Google Patents

Components for semiconductor manufacturing equipment Download PDF

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JP7331107B2
JP7331107B2 JP2021537246A JP2021537246A JP7331107B2 JP 7331107 B2 JP7331107 B2 JP 7331107B2 JP 2021537246 A JP2021537246 A JP 2021537246A JP 2021537246 A JP2021537246 A JP 2021537246A JP 7331107 B2 JP7331107 B2 JP 7331107B2
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rods
ceramic
electrode
semiconductor manufacturing
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隆二 田村
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NGK Insulators Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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Description

本発明は、半導体製造装置用部材に関する。 The present invention relates to a member for semiconductor manufacturing equipment.

エッチング装置やＣＶＤ装置等の半導体製造装置において、表面がウエハ載置面である円盤状のセラミックプレートの裏面に円筒状のセラミックシャフトを繋いだ構造の半導体製造装置用部材が使用されることがある。こうした半導体製造装置用部材としては、セラミックプレートに高周波電極（ＲＦ電極）が埋設され、このＲＦ電極を利用してプラズマを発生させるものが知られている。例えば、特許文献１の半導体製造装置用部材では、ＲＦ電極に複数のＲＦロッドが接続されており、複数のＲＦロッドはセラミックシャフトの中空内部に配置された１つのＲＦコネクタから分岐している。特許文献１では、１本のＲＦロッドではなく複数のＲＦロッドを備えているため、ＲＦロッド１本当たりに流れる電流を小さくすることができ、それに伴いＲＦロッド１本当たりの発熱量も減少する。したがって、セラミックプレートにホットスポットが生じにくくなる。 In a semiconductor manufacturing apparatus such as an etching apparatus or a CVD apparatus, a member for a semiconductor manufacturing apparatus having a structure in which a cylindrical ceramic shaft is connected to the back surface of a disk-shaped ceramic plate whose front surface is a wafer mounting surface is sometimes used. . As such a member for a semiconductor manufacturing apparatus, there is known one in which a high frequency electrode (RF electrode) is embedded in a ceramic plate and plasma is generated using this RF electrode. For example, in the member for semiconductor manufacturing equipment of Patent Document 1, a plurality of RF rods are connected to the RF electrode, and the plurality of RF rods are branched from one RF connector arranged in the hollow interior of the ceramic shaft. In Patent Document 1, since a plurality of RF rods are provided instead of one RF rod, the current flowing per RF rod can be reduced, and accordingly the heat generation amount per RF rod is also reduced. . Therefore, hot spots are less likely to occur on the ceramic plate.

特開２０１６－１８４６４２号公報JP 2016-184642 A

しかしながら、特許文献１のようにセラミックシャフトの中空内部にＲＦコネクタが配置されていると、ＲＦコネクタが発熱することによりセラミックシャフトの中空内部の温度が高くなることがあった。その場合、ＲＦロッドの発熱量が小さくても、ＲＦロッドの温度が上がりやすくなり、セラミックプレートにホットスポットが生じるおそれがあった。 However, when the RF connector is arranged in the hollow interior of the ceramic shaft as in Patent Document 1, the temperature inside the hollow interior of the ceramic shaft sometimes rises due to the heat generated by the RF connector. In that case, even if the heat generation amount of the RF rod is small, the temperature of the RF rod tends to rise, and there is a possibility that a hot spot may occur on the ceramic plate.

本発明はこのような課題を解決するためになされたものであり、複数のＲＦロッドを備えた半導体製造装置用部材において、セラミックプレートにホットスポットが生じるのを確実に防止することを主目的とする。 SUMMARY OF THE INVENTION The present invention has been made to solve such problems, and its main object is to reliably prevent hot spots from occurring in a ceramic plate in a member for a semiconductor manufacturing apparatus having a plurality of RF rods. do.

本発明の半導体製造装置用部材は、
表面がウエハ載置面であるセラミックプレートの裏面に中空のセラミックシャフトを設けた構造の半導体製造装置用部材であって、
前記セラミックプレートに埋設されたＲＦ電極と、
前記セラミックシャフトの中空内部の外側に配置されたＲＦコネクタと、
前記ＲＦコネクタと前記ＲＦ電極との間に設けられたＲＦリンク部材と、
を備え、
前記ＲＦリンク部材は、複数のＲＦロッドで構成された分岐部を有し、前記分岐部は、前記セラミックシャフトの外側まで続いている、
ものである。The member for semiconductor manufacturing equipment of the present invention is
A member for a semiconductor manufacturing apparatus having a structure in which a hollow ceramic shaft is provided on the back surface of a ceramic plate whose front surface is a wafer mounting surface,
RF electrodes embedded in the ceramic plate;
an RF connector positioned outside the hollow interior of the ceramic shaft;
an RF link member provided between the RF connector and the RF electrode;
with
The RF link member has a branched portion composed of a plurality of RF rods, and the branched portion continues to the outside of the ceramic shaft,
It is.

この半導体製造装置用部材では、ＲＦリンク部材は、複数のＲＦロッドで構成された分岐部を有している。これにより、ＲＦリンク部材の電流流路の表面積が増加するため、表皮効果による抵抗の増加を抑えることができる。また、ＲＦロッド１本当たりに流れる電流が小さくなるため、ＲＦロッド１本当たりの発熱量が減少する。一方、ＲＦコネクタは、セラミックシャフトの中空内部の外側に配置される。これにより、ＲＦコネクタが発熱したとしてもそれによってセラミックシャフトの中空内部の温度が高くなることはない。そのため、セラミックシャフトの中空内部に配置されたＲＦロッドの温度が上がりやすいという状況を招くことはない。したがって、本発明の半導体製造装置用部材によれば、セラミックプレートにホットスポットが生じるのを確実に防止することができる。 In this semiconductor manufacturing apparatus member, the RF link member has a branched portion composed of a plurality of RF rods. As a result, since the surface area of the current flow path of the RF link member is increased, an increase in resistance due to the skin effect can be suppressed. In addition, since the current flowing per RF rod becomes smaller, the amount of heat generated per RF rod is reduced. The RF connector, on the other hand, is placed outside the hollow interior of the ceramic shaft. As a result, even if the RF connector generates heat, the temperature inside the hollow portion of the ceramic shaft does not increase. Therefore, the situation that the temperature of the RF rod arranged in the hollow inside of the ceramic shaft tends to rise does not occur. Therefore, according to the semiconductor manufacturing apparatus member of the present invention, it is possible to reliably prevent hot spots from occurring in the ceramic plate.

本発明の半導体製造装置用部材において、前記複数のＲＦロッドは、前記セラミックプレートの裏面の手前の第１集約部で１つにまとめられて前記ＲＦ電極に接続されていてもよい。こうすれば、ＲＦリンク部材をＲＦ電極に接続する際、セラミックプレートに設ける穴を少なくすることができる。 In the member for a semiconductor manufacturing apparatus of the present invention, the plurality of RF rods may be combined into one at a first consolidation portion in front of the back surface of the ceramic plate and connected to the RF electrode. By doing so, it is possible to reduce the number of holes to be provided in the ceramic plate when connecting the RF link member to the RF electrode.

本発明の半導体製造装置用部材において、前記複数のＲＦロッドは、個別に前記ＲＦ電極に接続されていてもよい。こうすれば、複数のＲＦロッドの１つが何らかの理由でＲＦ電極から外れたとしても、他のＲＦロッドからＲＦ電極に電力を供給することができる。 In the semiconductor manufacturing apparatus member of the present invention, the plurality of RF rods may be individually connected to the RF electrodes. In this way, even if one of the multiple RF rods is detached from the RF electrode for some reason, power can be supplied from the other RF rods to the RF electrode.

本発明の半導体製造装置用部材において、ＲＦ電極は、セラミックプレートの内部で高さの異なる複数の面に亘って設けられていてもよい。こうすれば、ＲＦ電極の高さの異なる面ごとにプラズマの密度を変えることができる。この場合、複数のＲＦロッドは、ＲＦ電極の各面に個別に接続されていてもよい。こうすれば、ＲＦロッド間の距離を確保できる。例えば、発熱するＲＦロッド間の距離を大きくすることにより、ＲＦロッド同士が互いに加熱し合うことを防止できる。また、セラミックプレートの裏面に近いＲＦ電極とセラミックプレートの裏面から遠いＲＦ電極のそれぞれにＲＦロッドが接続されるため、セラミックプレートの裏面に近いＲＦ電極に接続されるＲＦロッドの穴の深さが浅くなり、セラミックプレートの加工負荷が小さくなり破損リスクを抑えられる。これに対して、セラミックプレートの裏面から遠いＲＦ電極に複数本のＲＦロッドが接続される場合には、複数本のＲＦロッドの穴の深さが深くなり、セラミックプレートの加工負荷が大きくなり破損リスクが高まる。 In the semiconductor manufacturing apparatus member of the present invention, the RF electrode may be provided over a plurality of surfaces having different heights inside the ceramic plate. By doing so, the plasma density can be changed for each surface of the RF electrode having a different height. In this case, multiple RF rods may be individually connected to each side of the RF electrode. By doing so, the distance between the RF rods can be ensured. For example, by increasing the distance between the heat-generating RF rods, it is possible to prevent the RF rods from heating each other. In addition, since the RF rods are connected to the RF electrodes close to the back surface of the ceramic plate and the RF electrodes far from the back surface of the ceramic plate, respectively, the depth of the holes of the RF rods connected to the RF electrodes close to the back surface of the ceramic plate is It becomes shallower, the processing load on the ceramic plate is reduced, and the risk of damage can be suppressed. On the other hand, when a plurality of RF rods are connected to the RF electrode far from the back surface of the ceramic plate, the depth of the holes of the plurality of RF rods becomes deep, and the processing load on the ceramic plate increases, resulting in breakage. Increased risk.

本発明の半導体製造装置用部材において、前記複数のＲＦロッドは、前記ＲＦコネクタの手前の第２集約部で１つにまとめられて前記ＲＦコネクタに接続されていてもよい。こうすれば、ＲＦリンク部材をＲＦコネクタに接続する際、ＲＦリンク部材とＲＦコネクタとの接続箇所を少なくすることができる。 In the member for a semiconductor manufacturing apparatus of the present invention, the plurality of RF rods may be combined into one at a second consolidating portion in front of the RF connector and connected to the RF connector. In this way, when connecting the RF link member to the RF connector, the number of connection points between the RF link member and the RF connector can be reduced.

本発明の半導体製造装置用部材において、前記ＲＦロッドを長手方向に対して垂直方向に切断したときの断面は、外周部に少なくとも１つの凹部を有する形状であってもよい。こうすれば、ＲＦロッドの表面積は凹部を有さない場合に比べて大きくなるため、表皮効果による抵抗の増加をより抑えることができ、ＲＦロッド１本当たりの発熱量がより減少する。 In the member for a semiconductor manufacturing apparatus of the present invention, the cross section of the RF rod taken perpendicularly to the longitudinal direction may have at least one concave portion in the outer peripheral portion. By doing so, the surface area of the RF rod becomes larger than when the recess is not provided, so that the increase in resistance due to the skin effect can be further suppressed, and the amount of heat generated per RF rod can be further reduced.

本発明の半導体製造装置用部材は、前記セラミックプレートに埋設された抵抗発熱体と、前記抵抗発熱体に接続され、前記セラミックシャフトの中空内部を通って前記セラミックシャフトの外側まで設けられた一対のヒータロッドと、を備えていてもよく、前記ＲＦリンク部材の基端は、前記ヒータロッドの基端よりも前記セラミックシャフトに近い位置にあってもよい。こうすれば、ＲＦリンク部材の発熱する部分が短くなるので、結果として発熱量が少なくなる。さらに、ＲＦリンク部材の基端に対して行う作業とヒータロッドの基端に対して行う作業とは干渉しにくいため、それぞれの作業をスムーズに行いやすくなる。また、ＲＦリンク部材の長さを比較的短くすることができるため、ＲＦリンク部材の抵抗を低く抑えることができ、ＲＦリンク部材の発熱量を低く抑えることができる。 A member for a semiconductor manufacturing apparatus according to the present invention includes a resistance heating element embedded in the ceramic plate, and a pair of resistance heating elements connected to the resistance heating element and provided to the outside of the ceramic shaft through the hollow interior of the ceramic shaft. and a heater rod, and the proximal end of the RF link member may be located closer to the ceramic shaft than the proximal end of the heater rod. This shortens the heat-generating portion of the RF link member, resulting in less heat generation. Furthermore, since the work performed on the base end of the RF link member and the work performed on the base end of the heater rod are unlikely to interfere with each other, each work can be performed smoothly. In addition, since the length of the RF link member can be made relatively short, the resistance of the RF link member can be kept low, and the amount of heat generated by the RF link member can be kept low.

本発明の半導体製造装置用部材は、前記セラミックプレートに埋設された抵抗発熱体と、前記抵抗発熱体に接続され、前記セラミックシャフトの中空内部を通って前記セラミックシャフトの外側まで設けられた一対のヒータロッドと、を備えていてもよく、ＲＦロッドは、ヒータロッドよりも太いことが好ましい。つまり、ＲＦロッドの直径は、ヒータロッドの直径よりも大きいことが好ましい。こうすれば、ＲＦロッドの表面積が大きくなるため、ＲＦロッドを流れるＲＦ電流の抵抗が低くなる。そのため、ＲＦロッド１本当たりの発熱量が更に減少する。なお、半導体製造装置用部材が第１集約部を備えている場合には、第１集約部の直径はヒータロッドの直径よりも大きいことが好ましい。半導体製造装置用部材が第２集約部を備えている場合には、第２集約部の直径はヒータロッドの直径よりも大きいことが好ましい。 A member for a semiconductor manufacturing apparatus according to the present invention includes a resistance heating element embedded in the ceramic plate, and a pair of resistance heating elements connected to the resistance heating element and provided to the outside of the ceramic shaft through the hollow interior of the ceramic shaft. and a heater rod, preferably the RF rod is thicker than the heater rod. That is, the diameter of the RF rod is preferably larger than the diameter of the heater rod. This increases the surface area of the RF rods, thereby reducing the resistance of the RF current flowing through the RF rods. Therefore, the amount of heat generated per RF rod is further reduced. In addition, when the member for semiconductor manufacturing equipment is provided with the first concentrated portion, the diameter of the first concentrated portion is preferably larger than the diameter of the heater rod. When the member for semiconductor manufacturing equipment has the second converging portion, the diameter of the second converging portion is preferably larger than the diameter of the heater rod.

セラミックヒータ１０の縦断面図。FIG. 2 is a longitudinal sectional view of the ceramic heater 10; ＲＦリンク部材１４０の周辺部分の縦断面図。FIG. 4 is a vertical cross-sectional view of the peripheral portion of the RF link member 140; ＲＦリンク部材２４０の周辺部分の縦断面図。FIG. 4 is a vertical cross-sectional view of the peripheral portion of the RF link member 240; ＲＦリンク部材３４０の周辺部分の縦断面図。FIG. 4 is a vertical cross-sectional view of the peripheral portion of the RF link member 340; ＲＦロッド４２の変形例の断面図。Sectional drawing of the modification of RF rod 42. FIG. ＲＦ電極４１６を備えたセラミックヒータの縦断面図。FIG. 4 is a vertical cross-sectional view of a ceramic heater with RF electrodes 416;

次に、本発明の好適な実施形態につき、図面を参照しながら以下に説明する。図１はセラミックヒータ１０の縦断面図である。 Next, preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view of a ceramic heater 10. FIG.

なお、本明細書において、「上」「下」は、絶対的な位置関係を表すものではなく、相対的な位置関係を表すものである。そのため、セラミックヒータ１０の向きによって「上」「下」は「下」「上」になったり「左」「右」になったり「前」「後」になったりする。 In this specification, the terms "upper" and "lower" do not represent absolute positional relationships, but rather relative positional relationships. Therefore, depending on the direction of the ceramic heater 10, "top" and "bottom" become "bottom" and "top", "left" and "right", or "front" and "rear".

セラミックヒータ１０は、半導体製造装置用部材の一つである。セラミックヒータ１０は、プラズマを利用してＣＶＤやエッチングなどの処理を施すウエハを支持して加熱するために用いられるものであり、図示しない半導体プロセス用のチャンバの内部に取り付けられる。このセラミックヒータ１０は、セラミックプレート１２と、セラミックシャフト２０と、ヒータロッド２４と、ＲＦコネクタ３０と、ＲＦリンク部材４０とを備えている。 The ceramic heater 10 is one of the members for semiconductor manufacturing equipment. The ceramic heater 10 is used to support and heat a wafer to be subjected to CVD, etching, or other processes using plasma, and is installed inside a semiconductor process chamber (not shown). This ceramic heater 10 includes a ceramic plate 12, a ceramic shaft 20, a heater rod 24, an RF connector 30, and an RF link member 40.

セラミックプレート１２は、ＡｌＮを主成分とする円盤状の部材である。このセラミックプレート１２は、ウエハを載置可能なウエハ載置面１２ａを備えている。セラミックプレート１２のウエハ載置面１２ａとは反対側の面（裏面）１２ｂには、セラミックシャフト２０が接合されている。セラミックプレート１２には、抵抗発熱体１４とＲＦ電極１６とが埋設されている。抵抗発熱体１４は、Ｍｏを主成分とするコイルをセラミックプレート１２の全面にわたってウエハ載置面１２ａと実質的に平行になるように一筆書きの要領で配線したものである。ＲＦ電極１６は、セラミックプレート１２よりもやや小径の円盤状の薄層電極であり、Ｍｏを主成分とする細い金属線を網状に編み込んでシート状にしたメッシュで形成されている。このＲＦ電極１６は、セラミックプレート１２のうち抵抗発熱体１４とウエハ載置面１２ａとの間にウエハ載置面１２ａと実質的に平行になるように埋設されている。抵抗発熱体１４やＲＦ電極１６の材質をＭｏとしたのは、セラミックプレート１２の主成分であるＡｌＮと熱膨張係数が近く、セラミックプレート１２の製造時にクラックが生じにくいからである。抵抗発熱体１４やＲＦ電極１６は、Ｍｏ以外の材質であっても、ＡｌＮと熱膨張係数が近い導電性材料であれば使用することができる。なお、セラミックプレート１２の裏面１２ｂのうちセラミックシャフト２０に囲まれた領域には、セラミックプレート１２の温度を検出する熱電対（図示せず）が差し込まれている。 The ceramic plate 12 is a disk- shaped member whose main component is AlN. This ceramic plate 12 has a wafer mounting surface 12a on which a wafer can be mounted. A ceramic shaft 20 is joined to a surface (back surface) 12b of the ceramic plate 12 opposite to the wafer mounting surface 12a. A resistance heating element 14 and an RF electrode 16 are embedded in the ceramic plate 12 . The resistance heating element 14 is formed by wiring a coil mainly composed of Mo over the entire surface of the ceramic plate 12 in a unicursal manner so as to be substantially parallel to the wafer mounting surface 12a. The RF electrode 16 is a disk-shaped thin-layer electrode having a diameter slightly smaller than that of the ceramic plate 12, and is formed of a sheet-like mesh formed by weaving fine metal wires mainly composed of Mo into a mesh. The RF electrode 16 is embedded in the ceramic plate 12 between the resistance heating element 14 and the wafer mounting surface 12a so as to be substantially parallel to the wafer mounting surface 12a. Mo is used as the material for the resistance heating element 14 and the RF electrode 16 because Mo has a coefficient of thermal expansion close to that of AlN, which is the main component of the ceramic plate 12, and cracks are less likely to occur when the ceramic plate 12 is manufactured. The resistance heating element 14 and the RF electrode 16 can be made of a material other than Mo as long as it is a conductive material having a coefficient of thermal expansion close to that of AlN. A thermocouple (not shown) for detecting the temperature of the ceramic plate 12 is inserted in a region surrounded by the ceramic shaft 20 on the back surface 12b of the ceramic plate 12. As shown in FIG.

セラミックシャフト２０は、ＡｌＮを主成分とする円筒状の部材であり、上部開口の周囲に第１フランジ２０ａ、下部開口の周囲に第２フランジ２０ｂを有している。第１フランジ２０ａの端面は、セラミックプレート１２の裏面１２ｂに固相接合法により接合されている。第２フランジ２０ｂの端面は、図示しないチャンバに固定される。 The ceramic shaft 20 is a cylindrical member whose main component is AlN, and has a first flange 20a around the upper opening and a second flange 20b around the lower opening. The end surface of the first flange 20a is joined to the back surface 12b of the ceramic plate 12 by solid phase joining. An end face of the second flange 20b is fixed to a chamber (not shown).

ヒータロッド２４は、Ｍｏなどの金属で形成された断面円形のロッドである。一対のヒータロッド２４のうちの一方のヒータロッド２４の上端は抵抗発熱体１４の一端に接合され、他方のヒータロッド２４の上端は抵抗発熱体１４の他端に接合されている。一対のヒータロッド２４の下端は、セラミックシャフト２０の中空内部２２の外側に露出しており、ケーブル２６を介してヒータ電源２８に接続されている。ヒータ電源２８は、本実施形態ではＡＣ電源であるが、ＤＣ電源を採用してもよい。 The heater rod 24 is a circular rod made of metal such as Mo. The upper end of one heater rod 24 of the pair of heater rods 24 is joined to one end of the resistance heating element 14 , and the upper end of the other heater rod 24 is joined to the other end of the resistance heating element 14 . The lower ends of the pair of heater rods 24 are exposed outside the hollow interior 22 of the ceramic shaft 20 and are connected to a heater power source 28 via cables 26 . The heater power source 28 is an AC power source in this embodiment, but a DC power source may be employed.

ＲＦコネクタ３０は、セラミックシャフト２０の中空内部２２の外側（下側）に配置されている。このＲＦコネクタ３０は、ソケット３２とＲＦベースロッド３６とを備えている。ソケット３２は、Ｎｉなどの導電性金属で形成された略直方体又は略円柱形の部材である。ソケット３２の上面には、ＲＦリンク部材４０のＲＦロッド４２を差し込むための２つの差込穴３４が設けられている。差込穴３４は、差し込まれたＲＦロッド４２を保持する。ＲＦベースロッド３６は、Ｎｉなどの導電性金属で形成されたロッドであり、ソケット３２の下面に一体化されている。ＲＦベースロッド３６は、ケーブル３７を介してＲＦ電源３８に接続されている。 The RF connector 30 is arranged outside (below) the hollow interior 22 of the ceramic shaft 20 . This RF connector 30 comprises a socket 32 and an RF base rod 36 . The socket 32 is a substantially rectangular parallelepiped or substantially cylindrical member made of a conductive metal such as Ni. Two insertion holes 34 for inserting the RF rods 42 of the RF link member 40 are provided on the upper surface of the socket 32 . The insertion hole 34 holds the RF rod 42 inserted. The RF base rod 36 is a rod made of conductive metal such as Ni, and is integrated with the bottom surface of the socket 32 . RF base rod 36 is connected to RF power supply 38 via cable 37 .

ＲＦリンク部材４０は、複数（ここでは２本）のＲＦロッド４２で構成された分岐部４４を有している。ＲＦロッド４２は、Ｎｉなどの導電性金属で形成された断面円形のロッドである。複数のＲＦロッド４２は、分岐したまま、上端がセラミックプレート１２の裏面１２ｂに設けられた穴１３を通してＲＦ電極１６に接続されている。また、複数のＲＦロッド４２は、分岐したまま、下端がＲＦコネクタ３０の差込穴３４に差し込まれている。本実施形態では、ＲＦリンク部材４０は、分岐部４４であり、ＲＦ電極１６からセラミックシャフト２０の中空内部２２を経てＲＦコネクタ３０に達している。そのため、分岐部４４の一部は、セラミックシャフト２０の中空内部２２に配置されている。ＲＦリンク部材４０は、ＲＦコネクタ３０及びケーブル３７を介してＲＦ電源３８に接続されている。ＲＦロッド４２の下端は、ヒータロッド２４の下端よりもセラミックシャフト２０に近い位置にある。ＲＦロッド４２同士の間にはヒータロッド２４が配置されていない。ＲＦロッド４２同士の間隔は、ＲＦロッド４２の直径以上である。 The RF link member 40 has a branch portion 44 configured by a plurality of (here, two) RF rods 42 . The RF rod 42 is a rod with a circular cross section made of a conductive metal such as Ni. The plurality of RF rods 42 are connected to the RF electrode 16 through holes 13 provided in the back surface 12b of the ceramic plate 12 at their upper ends while being branched. The lower ends of the plurality of RF rods 42 are inserted into the insertion holes 34 of the RF connector 30 while being branched. In this embodiment, the RF link member 40 is a branch 44 leading from the RF electrode 16 through the hollow interior 22 of the ceramic shaft 20 to the RF connector 30 . Part of the branch 44 is therefore arranged in the hollow interior 22 of the ceramic shaft 20 . RF link member 40 is connected to RF power supply 38 via RF connector 30 and cable 37 . The lower end of the RF rod 42 is closer to the ceramic shaft 20 than the lower end of the heater rod 24 is. No heater rod 24 is arranged between the RF rods 42 . The distance between the RF rods 42 is equal to or greater than the diameter of the RF rods 42 .

次に、セラミックヒータ１０の使用例について説明する。図示しないチャンバ内にセラミックヒータ１０を配置し、ウエハ載置面１２ａにウエハを載置する。そして、ケーブル２６及びヒータロッド２４を介して抵抗発熱体１４にヒータ電源２８の電圧を印加することにより、ウエハを加熱する。具体的には、図示しない熱電対の検出信号に基づいてウエハの温度を求め、その温度が設定温度（例えば３５０℃とか３００℃）になるように抵抗発熱体１４へ印加する電圧を制御する。また、ケーブル３７、ＲＦコネクタ３０及びＲＦリンク部材４０を介してＲＦ電極１６にＲＦ電源３８の交流高周波電圧を印加することにより、チャンバ内の上方に設置された図示しない対向水平電極とセラミックプレート１２に埋設されたＲＦ電極１６とからなる平行平板電極間にプラズマを発生させ、そのプラズマを利用してウエハにＣＶＤ成膜を施したりエッチングを施したりする。ＲＦ電極１６に直流電圧を印加すれば静電電極（ＥＳＣ電極）として使用することができる。 Next, a usage example of the ceramic heater 10 will be described. A ceramic heater 10 is arranged in a chamber (not shown), and a wafer is mounted on the wafer mounting surface 12a. Then, the wafer is heated by applying the voltage of the heater power supply 28 to the resistance heating element 14 through the cable 26 and the heater rod 24 . Specifically, the temperature of the wafer is obtained based on the detection signal of a thermocouple (not shown), and the voltage applied to the resistance heating element 14 is controlled so that the temperature reaches a set temperature (eg, 350° C. or 300° C.). In addition, by applying an AC high-frequency voltage of the RF power supply 38 to the RF electrode 16 via the cable 37, the RF connector 30 and the RF link member 40, the opposite horizontal electrode (not shown) installed above the chamber and the ceramic plate 12 Plasma is generated between the parallel plate electrodes consisting of the RF electrode 16 embedded in the wafer, and the plasma is used to perform CVD film formation or etching on the wafer. If a DC voltage is applied to the RF electrode 16, it can be used as an electrostatic electrode (ESC electrode).

以上詳述したセラミックヒータ１０では、ＲＦリンク部材４０は、複数のＲＦロッド４２で構成された分岐部４４を有している。これにより、ＲＦリンク部材４０の電流流路の表面積が増加するため、表皮効果による抵抗の増加を抑えることができる。また、ＲＦロッド１本当たりに流れる電流が小さくなるため、ＲＦロッド１本当たりの発熱量が減少する。一方、ＲＦコネクタ３０は、セラミックシャフト２０の中空内部２２の外側に配置される。これにより、ＲＦコネクタ３０が発熱したとしてもそれによってセラミックシャフト２０の中空内部２２の温度が高くなることはない。そのため、セラミックシャフト２０の中空内部２２に配置されたＲＦロッド４２の温度が上がりやすいという状況を招くことはない。したがって、セラミックヒータ１０によれば、セラミックプレート１２にホットスポットが生じるのを確実に防止することができる。また、セラミックシャフト２０の中空内部２２の外側にＲＦコネクタ３０が配置されるため、ＲＦリンク部材４０とＲＦコネクタ３０との接続作業をスムーズに行うことができる。 In the ceramic heater 10 detailed above, the RF link member 40 has a branch portion 44 composed of a plurality of RF rods 42 . As a result, since the surface area of the current flow path of the RF link member 40 is increased, an increase in resistance due to the skin effect can be suppressed. In addition, since the current flowing per RF rod becomes smaller, the amount of heat generated per RF rod is reduced. On the other hand, the RF connector 30 is arranged outside the hollow interior 22 of the ceramic shaft 20 . As a result, even if the RF connector 30 generates heat, the temperature of the hollow inside 22 of the ceramic shaft 20 does not increase. Therefore, the situation in which the temperature of the RF rod 42 arranged in the hollow interior 22 of the ceramic shaft 20 tends to rise does not occur. Therefore, the ceramic heater 10 can reliably prevent hot spots from occurring on the ceramic plate 12 . Further, since the RF connector 30 is arranged outside the hollow interior 22 of the ceramic shaft 20, the work of connecting the RF link member 40 and the RF connector 30 can be performed smoothly.

また、複数のＲＦロッド４２は、個別にＲＦ電極１６に接続されているため、複数のＲＦロッド４２のうちの１つが何らかの理由でＲＦ電極１６から外れたとしても、他のＲＦロッド４２からＲＦ電極１６に電力を供給することができる。また、複数のＲＦロッド４２がＲＦ電極１６に接続されるため、表皮効果による抵抗増を生じることなく、発熱量を抑えることができる。 In addition, since the plurality of RF rods 42 are individually connected to the RF electrode 16, even if one of the plurality of RF rods 42 is detached from the RF electrode 16 for some reason, RF Power can be supplied to the electrodes 16 . Moreover, since the plurality of RF rods 42 are connected to the RF electrode 16, the amount of heat generated can be suppressed without increasing the resistance due to the skin effect.

更に、ＲＦリンク部材４０の基端（下端）は、ヒータロッド２４の基端（下端）よりもセラミックシャフト２０に近い位置にある。これにより、ＲＦリンク部材４０の基端に対して行う作業とヒータロッド２４の基端に対して行う作業とは干渉しにくいため、それぞれの作業をスムーズに行いやすくなる。またＲＦリンク部材４０の長さを比較的短くすることができるため、ＲＦリンク部材４０の抵抗を低く抑えることができ、ＲＦリンク部材４０の発熱量を低く抑えることができる。更に、ヒータロッド２４は、高周波電流が流れないため表皮効果がなく、ＲＦロッド４２よりも低抵抗なため、長くしてもヒータロッド２４の発熱量はほとんど増えることはない。 Furthermore, the base end (lower end) of the RF link member 40 is located closer to the ceramic shaft 20 than the base end (lower end) of the heater rod 24 . As a result, the work performed on the base end of the RF link member 40 and the work performed on the base end of the heater rod 24 are less likely to interfere with each other, so that each work can be performed smoothly. Further, since the length of the RF link member 40 can be relatively short, the resistance of the RF link member 40 can be kept low, and the amount of heat generated by the RF link member 40 can be kept low. Further, the heater rod 24 does not have a skin effect because high-frequency current does not flow therethrough, and has a lower resistance than the RF rod 42. Therefore, even if the length of the heater rod 24 is increased, the amount of heat generated by the heater rod 24 hardly increases.

更にまた、ノイズの影響はノイズ発信源との距離が遠いほど弱くなるため、ＲＦロッド４２間にヒータロッド２４を配置しないことで、ヒータロッド２４に印加される電圧がＲＦロッド４２に印加される高周波電圧の影響を受けて変動するおそれが少なくなる。 Furthermore, since the influence of noise becomes weaker as the distance from the noise source increases, the voltage applied to the heater rods 24 is applied to the RF rods 42 by not arranging the heater rods 24 between the RF rods 42. The possibility of fluctuation due to the influence of the high frequency voltage is reduced.

そして、ＲＦロッド４２同士の間隔は、ＲＦロッド４２の直径以上であり、複数のＲＦロッド４２は十分な間隔を持って配置されるため、１つのＲＦロッド４２が他のＲＦロッド４２の発熱の影響を受けるおそれが少ない。 The distance between the RF rods 42 is equal to or larger than the diameter of the RF rods 42, and the plurality of RF rods 42 are arranged with sufficient distances. less likely to be affected.

そしてまた、ＲＦロッド４２はヒータロッド２４よりも太い（ＲＦロッド４２の直径はヒータロッド２４の直径よりも大きい）ことが好ましい。こうすれば、ＲＦロッド４２の表面積が大きくなるため、ＲＦロッド４２を流れるＲＦ電流の抵抗が低くなる。そのため、ＲＦロッド１本当たりの発熱量が更に減少する。 Also, the RF rod 42 is preferably thicker than the heater rod 24 (the diameter of the RF rod 42 is larger than the diameter of the heater rod 24). This increases the surface area of the RF rod 42, thereby reducing the resistance of the RF current flowing through the RF rod 42. FIG. Therefore, the amount of heat generated per RF rod is further reduced.

なお、本発明は上述した実施形態に何ら限定されることはなく、本発明の技術的範囲に属する限り種々の態様で実施し得ることはいうまでもない。 It goes without saying that the present invention is not limited to the above-described embodiments, and can be implemented in various forms as long as they fall within the technical scope of the present invention.

例えば、上述した実施形態のＲＦリンク部材４０の代わりに、図２のＲＦリンク部材１４０を採用してもよい。図２では、上述した実施形態と同じ構成要素については同じ符号を付した。ＲＦリンク部材１４０は、複数（ここでは２本）のＲＦロッド１４２で構成された分岐部１４４と、セラミックプレート１２の裏面１２ｂの手前で複数のＲＦロッド１４２が１つにまとめられた円柱状の集約部１４５とを備えている。ＲＦロッド１４２は、分岐したまま、下端がＲＦコネクタ３０の差込穴３４に差し込まれている。ＲＦロッド１４２の上端は、集約部１４５で１つのロッドに集約されてＲＦ電極１６に接続されている。ＲＦリンク部材１４０は、ＲＦ電極１６からセラミックシャフト２０の中空内部２２を経てＲＦコネクタ３０に達している。分岐部１４４の一部は、セラミックシャフト２０の中空内部２２に配置されている。ＲＦリンク部材１４０の下端は、ヒータロッド２４（図１参照）の下端よりもセラミックシャフト２０に近い位置にある。図２では、ＲＦリンク部材１４０のほとんどの部分が複数のＲＦロッド１４２で構成されているため、発熱を抑制することができる。また、ＲＦリンク部材１４０をＲＦ電極１６に接続する際、セラミックプレート１２に設ける穴１３を少なくすることができる。ＲＦロッド１４２や集約部１４５はヒータロッド２４よりも太いことが好ましい。こうすれば、ＲＦロッド１４２や集約部１４５の表面積が大きくなるため、ＲＦロッド１４２や集約部１４５を流れるＲＦ電流の抵抗が低くなり、それらの発熱量が小さくなる。 For example, the RF link member 140 of FIG. 2 may be employed instead of the RF link member 40 of the above-described embodiment. In FIG. 2, the same symbols are attached to the same components as in the above-described embodiment. The RF link member 140 has a branch portion 144 composed of a plurality of (here, two) RF rods 142, and a columnar shape in which the plurality of RF rods 142 are united in front of the back surface 12b of the ceramic plate 12. and an aggregation unit 145 . The lower end of the RF rod 142 is inserted into the insertion hole 34 of the RF connector 30 while being branched. The upper ends of the RF rods 142 are aggregated into one rod at an aggregate portion 145 and connected to the RF electrode 16 . The RF link member 140 extends from the RF electrode 16 through the hollow interior 22 of the ceramic shaft 20 to the RF connector 30 . A portion of the branch 144 is located in the hollow interior 22 of the ceramic shaft 20 . The lower end of the RF link member 140 is located closer to the ceramic shaft 20 than the lower end of the heater rod 24 (see FIG. 1). In FIG. 2, since most of the RF link member 140 is composed of a plurality of RF rods 142, heat generation can be suppressed. Also, when connecting the RF link member 140 to the RF electrode 16, the holes 13 provided in the ceramic plate 12 can be reduced. It is preferable that the RF rod 142 and the aggregated portion 145 are thicker than the heater rod 24 . By doing so, the surface areas of the RF rods 142 and the aggregated portion 145 are increased, so the resistance of the RF current flowing through the RF rods 142 and the aggregated portion 145 is reduced, and the amount of heat generated by them is reduced.

上述した実施形態のＲＦリンク部材４０の代わりに、図３のＲＦリンク部材２４０を採用してもよい。図３では、上述した実施形態と同じ構成要素については同じ符号を付した。ＲＦリンク部材２４０は、複数（ここでは２本）のＲＦロッド２４２で構成された分岐部２４４と、セラミックプレート１２の裏面１２ｂの手前で複数のＲＦロッド２４２が１つにまとめられた円柱状の第１集約部２４５と、ＲＦコネクタ３０の手前で複数のＲＦロッド２４２が１つにまとめられた円柱状の第２集約部２４６とを備えている。ＲＦロッド２４２の上端は、第１集約部２４５で１つのロッドに集約されてＲＦ電極１６に接続されている。ＲＦロッド２４２の下端は、第２集約部２４６で１つのロッドに集約されてＲＦコネクタ３０の差込穴３４に差し込まれている。ＲＦリンク部材２４０は、ＲＦ電極１６からセラミックシャフト２０の中空内部２２を経てＲＦコネクタ３０に達している。分岐部２４４の一部は、セラミックシャフト２０の中空内部２２に配置されている。ＲＦリンク部材２４０の下端は、ヒータロッド２４（図１参照）の下端よりもセラミックシャフト２０に近い位置にある。図３では、ＲＦリンク部材２４０をＲＦ電極１６に接続する際、セラミックプレート１２に設ける穴１３を少なくすることができる。また、ＲＦリンク部材２４０をＲＦコネクタ３０に接続する際、上述した実施形態に比べて接続箇所（差込穴３４）を少なくすることができる。なお、ＲＦ電極１６とＲＦコネクタ３０との間に、複数のＲＦリンク部材２４０を設けてもよい。ＲＦロッド２４２や第１及び第２集約部２４５，２４６はヒータロッド２４よりも太いことが好ましい。こうすれば、ＲＦロッド２４２や第１及び第２集約部２４５，２４６の表面積が大きくなるため、ＲＦロッド２４２や第１及び第２集約部２４５，２４６を流れるＲＦ電流の抵抗が低くなり、それらの発熱量が小さくなる。 The RF link member 240 of FIG. 3 may be employed instead of the RF link member 40 of the embodiment described above. In FIG. 3, the same symbols are attached to the same components as in the above-described embodiment. The RF link member 240 has a branch portion 244 composed of a plurality of (here, two) RF rods 242, and a columnar shape in which the plurality of RF rods 242 are united in front of the back surface 12b of the ceramic plate 12. It is provided with a first gathering portion 245 and a cylindrical second gathering portion 246 in which a plurality of RF rods 242 are brought together in front of the RF connector 30 . The upper ends of the RF rods 242 are aggregated into one rod at a first aggregate portion 245 and connected to the RF electrode 16 . The lower ends of the RF rods 242 are gathered into one rod by a second gathering portion 246 and inserted into the insertion hole 34 of the RF connector 30 . An RF link member 240 extends from the RF electrode 16 through the hollow interior 22 of the ceramic shaft 20 to the RF connector 30 . A portion of the branch 244 is located in the hollow interior 22 of the ceramic shaft 20 . The lower end of the RF link member 240 is located closer to the ceramic shaft 20 than the lower end of the heater rod 24 (see FIG. 1). In FIG. 3, the holes 13 provided in the ceramic plate 12 can be reduced when connecting the RF link member 240 to the RF electrode 16 . Also, when connecting the RF link member 240 to the RF connector 30, the number of connection points (insertion holes 34) can be reduced compared to the above-described embodiment. A plurality of RF link members 240 may be provided between the RF electrode 16 and the RF connector 30 . The RF rod 242 and the first and second aggregated portions 245 and 246 are preferably thicker than the heater rod 24 . This increases the surface area of the RF rod 242 and the first and second aggregated portions 245 and 246, so that the resistance of the RF current flowing through the RF rod 242 and the first and second aggregated portions 245 and 246 is reduced. calorific value becomes smaller.

上述した実施形態のＲＦリンク部材４０の代わりに、図４のＲＦリンク部材３４０を採用してもよい。図４では、上述した実施形態と同じ構成要素については同じ符号を付した。ＲＦリンク部材３４０は、複数（ここでは２本）のＲＦロッド３４２で構成された分岐部３４４と、ＲＦコネクタ３０の手前で複数のＲＦロッド３４２が１つにまとめられた集約部３４６とを備えている。ＲＦロッド３４２は、分岐したまま、上端がＲＦ電極１６に接続されている。ＲＦロッド３４２の下端は、集約部３４６で１つのロッドに集約されてＲＦコネクタ３０の差込穴３４に差し込まれている。ＲＦリンク部材３４０は、ＲＦ電極１６からセラミックシャフト２０の中空内部２２を経てＲＦコネクタ３０に達している。分岐部３４４の一部は、セラミックシャフト２０の中空内部２２に配置されている。ＲＦリンク部材３４０の下端は、ヒータロッド２４（図１参照）の下端よりもセラミックシャフト２０に近い位置にある。図４では、ＲＦリンク部材３４０をＲＦコネクタ３０に接続する際、上述した実施形態に比べて接続箇所（差込穴３４）を少なくすることができる。なお、ＲＦ電極１６とＲＦコネクタ３０との間に、複数のＲＦリンク部材３４０を設けてもよい。ＲＦロッド３４２や集約部３４６はヒータロッド２４よりも太いことが好ましい。こうすれば、ＲＦロッド３４２や集約部３４６の表面積が大きくなるため、ＲＦロッド３４２や集約部３４６を流れるＲＦ電流の抵抗が低くなり、それらの発熱量が小さくなる。 The RF link member 340 of FIG. 4 may be employed instead of the RF link member 40 of the embodiment described above. In FIG. 4, the same symbols are attached to the same components as in the above-described embodiment. The RF link member 340 includes a branch portion 344 composed of a plurality of (here, two) RF rods 342, and a consolidation portion 346 in which the plurality of RF rods 342 are integrated in front of the RF connector 30. ing. The RF rod 342 is connected at its upper end to the RF electrode 16 while remaining branched. The lower ends of the RF rods 342 are gathered into one rod at the gathering portion 346 and inserted into the insertion hole 34 of the RF connector 30 . An RF link member 340 extends from the RF electrode 16 through the hollow interior 22 of the ceramic shaft 20 to the RF connector 30 . A portion of the branch 344 is located in the hollow interior 22 of the ceramic shaft 20 . The lower end of the RF link member 340 is located closer to the ceramic shaft 20 than the lower end of the heater rod 24 (see FIG. 1). In FIG. 4, when connecting the RF link member 340 to the RF connector 30, the number of connection points (insertion holes 34) can be reduced compared to the above-described embodiment. A plurality of RF link members 340 may be provided between the RF electrode 16 and the RF connector 30 . It is preferable that the RF rod 342 and the aggregated portion 346 are thicker than the heater rod 24 . By doing so, the surface areas of the RF rods 342 and the aggregated portion 346 are increased, so that the resistance of the RF current flowing through the RF rods 342 and the aggregated portion 346 is reduced, and the amount of heat generated by them is reduced.

上述した実施形態では、ＲＦロッド４２の断面（長手方向に対して垂直方向に切断したときの断面）を円形としたが、図５に示すように、ＲＦロッド４２の断面の外周部に少なくとも１つ（ここでは５つ）の凹部４２ａを有する形状としてもよい。具体的には、ＲＦロッド４２は、長手方向に沿って延びる溝を少なくとも１つ（ここでは５つ）備えていてもよい。こうすれば、ＲＦロッド４２の表面積は凹部４２ａを有さない場合に比べて大きくなるため、表皮効果による抵抗の増加をより抑えることができ、ＲＦロッド１本当たりの発熱量がより減少する。 In the above-described embodiment, the cross section of the RF rod 42 (the cross section when cut in the direction perpendicular to the longitudinal direction) is circular, but as shown in FIG. A shape having one (here, five) recesses 42a may be employed. Specifically, the RF rod 42 may include at least one (here, five) grooves extending along its longitudinal direction. By doing so, the surface area of the RF rod 42 becomes larger than when the concave portion 42a is not provided, so that an increase in resistance due to the skin effect can be further suppressed, and the amount of heat generated per RF rod can be further reduced.

上述した実施形態では、ＲＦ電極１６の形状をメッシュとしたが、その他の形状であってもよい。例えば、コイル状や平面状であってもよいし、パンチングメタルであってもよい。 In the above-described embodiment, the shape of the RF electrode 16 is mesh, but other shapes may be used. For example, it may have a coil shape, a flat shape, or a punching metal.

上述した実施形態では、セラミック材料としてＡｌＮを採用したが、特にこれに限定されるものではなく、例えばアルミナや窒化珪素、炭化珪素などを採用してもよい。その場合、抵抗発熱体１４やＲＦ電極１６の材質はそのセラミックの熱膨張係数に近いものを使用するのが好ましい。 Although AlN is used as the ceramic material in the above-described embodiments, the material is not particularly limited to this, and alumina, silicon nitride, silicon carbide, or the like, for example, may be used. In that case, it is preferable to use a material having a coefficient of thermal expansion close to that of the ceramic for the material of the resistance heating element 14 and the RF electrode 16 .

上述した実施形態では、セラミックプレート１２に抵抗発熱体１４とＲＦ電極１６とを埋設したが、更に静電電極を埋設してもよい。こうすれば、セラミックヒータ１０は静電チャックとしての機能も果たすようになる。 In the embodiment described above, the resistance heating element 14 and the RF electrode 16 are embedded in the ceramic plate 12, but an electrostatic electrode may also be embedded. In this way, the ceramic heater 10 also functions as an electrostatic chuck.

上述した実施形態では、セラミックプレート１２の全面にわたって抵抗発熱体１４を一筆書きの要領で配線する１ゾーンヒータを例示したが、特にこれに限定されない。例えば、セラミックプレート１２の全面を複数のゾーンに分けてゾーンごとに抵抗発熱体を一筆書きの要領で配線する多ゾーンヒータを採用してもよい。この場合、各ゾーンの抵抗発熱体につき一対のヒータロッドを設けるようにすればよい。 In the above-described embodiment, the one-zone heater in which the resistance heating element 14 is wired over the entire surface of the ceramic plate 12 in a unicursal manner has been exemplified, but the present invention is not particularly limited to this. For example, a multi-zone heater may be adopted in which the entire surface of the ceramic plate 12 is divided into a plurality of zones and the resistance heating elements are wired in a single stroke for each zone. In this case, a pair of heater rods may be provided for each resistive heating element in each zone.

上述した実施形態のＲＦ電極１６の代わりに、図６のＲＦ電極４１６を採用してもよい。図６では、上述した実施形態と同じ構成要素については同じ符号を付した。ＲＦ電極４１６は、内側円形電極４１６ａの外周縁と外側円環電極４１６ｂの内周縁とを円筒状の連結部４１６ｃで繋いだものである。内側円形電極４１６ａと外側円環電極４１６ｂとは高さの異なる面に上下二段になるように配置されている。ＲＦリンク部材４０（分岐部４４）を構成する２本のＲＦロッド４２のうち１本は内側円形電極４１６ａの裏面に接続され、もう１本は外側円環電極４１６ｂの裏面に接続されている。つまり、２本のＲＦロッド４２はＲＦ電極４１６の高さの異なる各面に接続されている。このようにしても、上述した実施形態と同様の効果が得られる。また、ＲＦ電極４１６は、セラミックプレート１２の内部で高さの異なる複数の面に亘って設けられているため、ＲＦ電極４１６の高さの異なる面ごとにプラズマの密度を変えることができる。更に、２本のＲＦロッド４２は、ＲＦ電極４１６の各面に個別に接続されているため、２本のＲＦロッド４２間の距離を確保できる。例えば、発熱する２本のＲＦロッド４２間の距離を大きくすることにより、ＲＦロッド４２同士が互いに加熱し合うことを防止できる。更にまた、セラミックプレート１２の裏面１２ｂに近い外側円環電極４１６ｂと裏面１２ｂから遠い内側円形電極４１６ａのそれぞれにＲＦロッド４２が接続されるため、裏面１２ｂに近い外側円環電極４１６ｂに接続されるＲＦロッド４２の穴の深さが浅くなり、セラミックプレート１２の加工負荷が小さくなり破損リスクを抑えられる。これに対して、裏面１２ｂから遠い内側円形電極４１６ａに２本のＲＦロッド４２が接続される場合には、２本のＲＦロッド４２の穴の深さが深くなり、セラミックプレート１２の加工負荷が大きくなり破損リスクが高まる。なお、図６において、上述した実施形態と同様の抵抗発熱体１４やヒータロッド２４を設けてもよい。また、図６において、ＲＦリンク部材４０の代わりに図４のＲＦリンク部材３４０を採用してもよい。 The RF electrode 416 of FIG. 6 may be employed in place of the RF electrode 16 of the embodiments described above. In FIG. 6, the same symbols are attached to the same components as in the above-described embodiment. The RF electrode 416 is formed by connecting the outer peripheral edge of the inner circular electrode 416a and the inner peripheral edge of the outer annular electrode 416b with a cylindrical connecting portion 416c. The inner circular electrode 416a and the outer annular electrode 416b are arranged in two stages on surfaces having different heights. One of the two RF rods 42 forming the RF link member 40 (branch portion 44) is connected to the back surface of the inner circular electrode 416a, and the other is connected to the back surface of the outer annular electrode 416b. That is, the two RF rods 42 are connected to the surfaces of the RF electrode 416 with different heights. Even in this way, the same effects as in the above-described embodiment can be obtained. Further, since the RF electrode 416 is provided over a plurality of surfaces with different heights inside the ceramic plate 12, the plasma density can be changed for each surface of the RF electrode 416 with different heights. Furthermore, since the two RF rods 42 are individually connected to each surface of the RF electrode 416, the distance between the two RF rods 42 can be secured. For example, by increasing the distance between the two heat-generating RF rods 42, it is possible to prevent the RF rods 42 from heating each other. Furthermore, since the RF rod 42 is connected to each of the outer ring electrode 416b near the back surface 12b of the ceramic plate 12 and the inner ring electrode 416a farther from the back surface 12b, it is connected to the outer ring electrode 416b near the back surface 12b. The depth of the hole of the RF rod 42 becomes shallower, the processing load on the ceramic plate 12 becomes smaller, and the risk of breakage can be suppressed. On the other hand, when the two RF rods 42 are connected to the inner circular electrode 416a far from the back surface 12b, the holes of the two RF rods 42 become deep, and the processing load on the ceramic plate 12 increases. The larger the size, the higher the risk of breakage. In addition, in FIG. 6, a resistance heating element 14 and a heater rod 24 similar to those in the above-described embodiment may be provided. Also, in FIG. 6, the RF link member 340 of FIG. 4 may be employed instead of the RF link member 40. FIG.

本出願は、２０１９年８月８日に出願された日本国特許出願第２０１９－１４６４１３号を優先権主張の基礎としており、引用によりその内容の全てが本明細書に含まれる。 This application claims priority from Japanese Patent Application No. 2019-146413 filed on August 8, 2019, the entire contents of which are incorporated herein by reference.

本発明は、例えばエッチング装置やＣＶＤ装置等の半導体製造装置に用いられる部材として利用可能である。 INDUSTRIAL APPLICABILITY The present invention can be used as members used in semiconductor manufacturing equipment such as etching equipment and CVD equipment.

１０ セラミックヒータ、１２ セラミックプレート、１２ａ ウエハ載置面、１２ｂ 裏面、１３ 穴、１４ 抵抗発熱体、１６ ＲＦ電極、２０ セラミックシャフト、２０ａ 第１フランジ、２０ｂ 第２フランジ、２２ 中空内部、２４ ヒータロッド、２６ ケーブル、２８ ヒータ電源、３０ ＲＦコネクタ、３２ ソケット、３４ 差込穴、３６ ＲＦベースロッド、３７ ケーブル、３８ ＲＦ電源、４０ ＲＦリンク部材、４２ ＲＦロッド、４２ａ 凹部、４４ 分岐部、１４０ ＲＦリンク部材、１４２ ＲＦロッド、１４４ 分岐部、１４５ 集約部、２４０ ＲＦリンク部材、２４２ ＲＦロッド、２４４ 分岐部、２４５ 第１集約部、２４６ 第２集約部、３４０ ＲＦリンク部材、３４２ ＲＦロッド、３４４ 分岐部、３４６ 集約部、４１６ ＲＦ電極、４１６ａ 内側円形電極、４１６ｂ 外側円環電極、４１６ｃ 連結部。 Reference Signs List 10 ceramic heater 12 ceramic plate 12a wafer mounting surface 12b rear surface 13 hole 14 resistance heating element 16 RF electrode 20 ceramic shaft 20a first flange 20b second flange 22 hollow interior 24 heater rod , 26 cable, 28 heater power supply, 30 RF connector, 32 socket, 34 insertion hole, 36 RF base rod, 37 cable, 38 RF power supply, 40 RF link member, 42 RF rod, 42a recess, 44 branch, 140 RF link member, 142 RF rod, 144 branching portion, 145 aggregation portion, 240 RF link member, 242 RF rod, 244 branching portion, 245 first aggregation portion, 246 second aggregation portion, 340 RF link member, 342 RF rod, 344 branching portion, 346 converging portion, 416 RF electrode, 416a inner circular electrode, 416b outer annular electrode, 416c connecting portion.

Claims (8)

表面がウエハ載置面であるセラミックプレートの裏面に中空のセラミックシャフトを設けた構造の半導体製造装置用部材であって、
前記セラミックプレートに埋設されたＲＦ電極と、
前記セラミックシャフトの中空内部の外側に配置されたＲＦコネクタと、
前記ＲＦコネクタと前記ＲＦ電極との間に設けられたＲＦリンク部材と、
を備え、
前記ＲＦリンク部材は、複数のＲＦロッドで構成された分岐部を有し、前記分岐部は、前記セラミックシャフトの外側まで続いているものであり、
前記複数のＲＦロッドは、前記セラミックプレートの裏面の手前の第１集約部で１つにまとめられて前記ＲＦ電極に接続されている、
半導体製造装置用部材。 A member for a semiconductor manufacturing apparatus having a structure in which a hollow ceramic shaft is provided on the back surface of a ceramic plate whose front surface is a wafer mounting surface,
RF electrodes embedded in the ceramic plate;
an RF connector positioned outside the hollow interior of the ceramic shaft;
an RF link member provided between the RF connector and the RF electrode;
with
The RF link member has a branched portion composed of a plurality of RF rods, and the branched portion continues to the outside of the ceramic shaft ,
The plurality of RF rods are combined into one at a first consolidation portion in front of the back surface of the ceramic plate and connected to the RF electrode.
Components for semiconductor manufacturing equipment. 表面がウエハ載置面であるセラミックプレートの裏面に中空のセラミックシャフトを設けた構造の半導体製造装置用部材であって、
前記セラミックプレートに埋設されたＲＦ電極と、
前記セラミックシャフトの中空内部の外側に配置されたＲＦコネクタと、
前記ＲＦコネクタと前記ＲＦ電極との間に設けられたＲＦリンク部材と、
を備え、
前記ＲＦリンク部材は、複数のＲＦロッドで構成された分岐部を有し、前記分岐部は、前記セラミックシャフトの外側まで続いているものであり、
前記複数のＲＦロッドは、前記ＲＦコネクタの手前の第２集約部で１つにまとめられて前記ＲＦコネクタに接続されている、
半導体製造装置用部材。 A member for a semiconductor manufacturing apparatus having a structure in which a hollow ceramic shaft is provided on the back surface of a ceramic plate whose front surface is a wafer mounting surface,
RF electrodes embedded in the ceramic plate;
an RF connector positioned outside the hollow interior of the ceramic shaft;
an RF link member provided between the RF connector and the RF electrode;
with
The RF link member has a branched portion composed of a plurality of RF rods, and the branched portion continues to the outside of the ceramic shaft ,
The plurality of RF rods are combined into one at a second consolidation portion in front of the RF connector and connected to the RF connector.
Components for semiconductor manufacturing equipment. 前記複数のＲＦロッドは、前記セラミックプレートの裏面の手前の第１集約部で１つにまとめられて前記ＲＦ電極に接続されている、
請求項２に記載の半導体製造装置用部材。 The plurality of RF rods are combined into one at a first consolidation portion in front of the back surface of the ceramic plate and connected to the RF electrode.
The member for semiconductor manufacturing equipment according to claim 2 . 前記複数のＲＦロッドは、個別に前記ＲＦ電極に接続されている、
請求項２に記載の半導体製造装置用部材。 the plurality of RF rods are individually connected to the RF electrodes;
The member for semiconductor manufacturing equipment according to claim 2 . 前記ＲＦ電極は、前記セラミックプレートの内部で高さの異なる複数の面に亘って設けられ、
前記複数のＲＦロッドは、前記ＲＦ電極の各面に個別に接続されている、
請求項３に記載の半導体製造装置用部材。 The RF electrode is provided over a plurality of surfaces with different heights inside the ceramic plate,
the plurality of RF rods are individually connected to each side of the RF electrode;
The member for semiconductor manufacturing equipment according to claim 3 . 前記ＲＦロッドを長手方向に対して垂直方向に切断したときの断面は、外周部に少なくとも１つの凹部を有する形状である、
請求項１～５のいずれか１項に記載の半導体製造装置用部材。 The cross section of the RF rod taken perpendicular to the longitudinal direction has at least one concave portion in the outer peripheral portion,
The member for semiconductor manufacturing equipment according to any one of claims 1 to 5. 請求項１～６のいずれか１項に記載の半導体製造装置用部材であって、
前記セラミックプレートに埋設された抵抗発熱体と、
前記抵抗発熱体に接続され、前記セラミックシャフトの中空内部を通って前記セラミックシャフトの外側まで設けられた一対のヒータロッドと、
を備え、
前記ＲＦリンク部材の基端は、前記ヒータロッドの基端よりも前記セラミックシャフトに近い位置にある、
半導体製造装置用部材。 The member for semiconductor manufacturing equipment according to any one of claims 1 to 6,
a resistance heating element embedded in the ceramic plate;
a pair of heater rods connected to the resistance heating element and extending through the hollow interior of the ceramic shaft to the outside of the ceramic shaft;
with
The base end of the RF link member is located closer to the ceramic shaft than the base end of the heater rod,
Components for semiconductor manufacturing equipment. 請求項１～６のいずれか１項に記載の半導体製造装置用部材であって、
前記セラミックプレートに埋設された抵抗発熱体と、
前記抵抗発熱体に接続され、前記セラミックシャフトの中空内部を通って前記セラミックシャフトの外側まで設けられた一対のヒータロッドと、
を備え、
前記ＲＦロッドは、前記ヒータロッドよりも太い、
半導体製造装置用部材。 The member for semiconductor manufacturing equipment according to any one of claims 1 to 6,
a resistance heating element embedded in the ceramic plate;
a pair of heater rods connected to the resistance heating element and extending through the hollow interior of the ceramic shaft to the outside of the ceramic shaft;
with
The RF rod is thicker than the heater rod,
Components for semiconductor manufacturing equipment.
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