JP7323054B2 - Abrasive and polishing method - Google Patents

Description

TECHNICAL FIELD The present disclosure relates to abrasives, polishing methods, and the like.

2. Description of the Related Art In recent years, new microfabrication techniques have been developed as semiconductor integrated circuits (hereinafter also referred to as “LSI”) have become highly integrated or have high performance. Chemical mechanical polishing (hereinafter also referred to as "CMP") is one such method, and is frequently used in LSI manufacturing processes (particularly, planarization of interlayer insulating films, formation of metal plugs, formation of embedded wiring, etc. in multilevel wiring formation processes). It is a technology used for

As an example, the formation of embedded wiring using the CMP method will be described. First, a substrate having an insulating member (a member containing an insulating material) having an uneven surface is prepared. Silicon oxide, silicon nitride, or the like can be used as an insulating material forming the insulating member. Next, a barrier material is deposited all over the insulating member to obtain a barrier member shaped to follow the surface of the insulating member. Further, a substrate (object to be polished) is obtained by obtaining a metal member by depositing a metal material on the entire barrier member so as to fill the concave portion (groove portion). Next, the buried wiring is formed by removing unnecessary metal members other than the recesses and the barrier member located on the protrusions of the insulating member by CMP. Such a wiring formation method is called a damascene method.

In recent years, tungsten materials such as tungsten and tungsten alloys have come to be used as metal materials. FIG. 1 shows an example of a wiring forming method by the damascene method using a tungsten member (a member containing a tungsten material). As shown in FIG. 1A, a substrate (object to be polished) 10 includes an insulating member 1 having an uneven surface and a barrier member (a member containing a barrier material) 2 having a shape following the surface of the insulating member 1. and a tungsten member 3 covering the entire barrier member 2 so as to fill the recess. The method of polishing the substrate 10 comprises a first polishing step (rough polishing step; FIG. 1(a) to FIG. 1(b)) of polishing most of the tungsten member 3 until the barrier member 2 is exposed, and the insulating member 1 A second polishing step (FIGS. 1(b) to 1(c)) of polishing the barrier member 2 and the tungsten member 3 until the is exposed, and a third polishing step of polishing the insulating member 1, the barrier member 2 and the tungsten member 3. and a polishing step (finish polishing step) in this order.

As a polishing agent that can be used for polishing tungsten materials, for example, Patent Document 1 below describes a polishing agent containing a catalyst (for example, an iron compound), an oxidizing agent, and the like. As an abrasive that can be used for polishing an insulating material, for example, JP-A No. 2002-300003 describes an abrasive containing phosphoric acid or the like.

JP-A-10-265766 JP-A-6-124932

For abrasives, excellent polishing rates are obtained not only for some of the tungsten material, silicon oxide and silicon nitride, but also for all of the tungsten material, silicon oxide and silicon nitride. may be required to be

One aspect of the present disclosure is intended to solve such problems, and an object thereof is to provide a polishing agent capable of polishing tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. . Another aspect of the present disclosure aims to provide a polishing method using such an abrasive.

As a result of extensive research, the present inventors have found that by using an abrasive containing abrasive grains having a positive zeta potential, a predetermined amount of ammonium salt, an iron-containing compound, and an oxidizing agent, tungsten It has been found that the materials silicon oxide and silicon nitride can be polished at excellent polishing rates.

One aspect of the present disclosure contains abrasive grains, an ammonium salt, an iron-containing compound, and an oxidizing agent, wherein the abrasive grains have a positive zeta potential, and the ammonium salt content is Provided is an abrasive for tungsten materials, which is 0.01% by mass or more and less than 0.20% by mass based on.

Another aspect of the present disclosure provides a polishing method for polishing a surface to be polished using the polishing agent described above.

With such a polishing agent and polishing method, tungsten material, silicon oxide and silicon nitride can be polished at a high polishing rate.

According to one aspect of the present disclosure, it is possible to provide a polishing agent capable of polishing tungsten material, silicon oxide and silicon nitride at an excellent polishing rate. According to another aspect of the present disclosure, it is possible to provide a polishing method using such an abrasive.

FIG. 1 is a schematic cross-sectional view for explaining wiring formation by the damascene method.

Hereinafter, embodiments of the present disclosure will be described in detail. However, the present disclosure is not limited to the following embodiments, and various modifications can be made within the scope of the gist of the present disclosure.

<Definition>
As used herein, the term "polishing rate" means the rate at which a material to be polished is removed by polishing (for example, the amount of reduction in the thickness of the material to be polished per hour: Removal Rate). "Abrasive grain" means an aggregate of a plurality of grains, but for the sake of convenience, one grain that constitutes the abrasive grain may be called an abrasive grain. The term "process" includes not only independent steps, but also steps that are indistinguishable from other steps but achieve their intended action. The terms "film" and "layer" include not only a shape structure formed over the entire surface but also a shape structure formed partially when viewed as a plan view. A numerical range indicated using "-" indicates a range including the numerical values before and after "-" as the minimum and maximum values, respectively. "A or more" in a numerical range means A and a range exceeding A. "A or less" in a numerical range means A and a range less than A. In the numerical ranges described stepwise in this specification, the upper limit or lower limit of the numerical range in one step can be arbitrarily combined with the upper limit or lower limit of the numerical range in another step. In the numerical ranges described herein, the upper or lower limits of the numerical ranges may be replaced with the values shown in the examples. "A or B" may include either A or B, or may include both. The materials exemplified in this specification can be used singly or in combination of two or more unless otherwise specified. The content of each component in the composition means the total amount of the plurality of substances present in the composition unless otherwise specified when there are multiple substances corresponding to each component in the composition. "(Meth)acrylic acid" means at least one of acrylic acid and methacrylic acid. Diluting X times is defined as adding water or the like so that the mass before dilution becomes X times. For example, adding the same mass of water to the mass of the abrasive storage liquid to obtain an abrasive twice the mass of the pre-diluted abrasive storage liquid means diluting twice. .

<Abrasive>
The polishing agent according to this embodiment contains abrasive grains, an ammonium salt, an iron-containing compound, and an oxidizing agent. In the abrasive according to this embodiment, the abrasive grains have a positive zeta potential. The content of the ammonium salt in the abrasive according to this embodiment is 0.01% by mass or more and less than 0.20% by mass based on the total mass of the abrasive. The abrasive according to this embodiment is an abrasive for tungsten materials (an abrasive that can be used for polishing tungsten materials). “Tungsten material” means a material containing 50 mol % or more of tungsten, and examples include tungsten (single substance), tungsten alloys, tungsten compounds (tungsten oxide, tungsten silicide, tungsten nitride, etc.).

The abrasive according to the present embodiment can polish tungsten materials, silicon oxide and silicon nitride at an excellent polishing rate. The reason for this is not clear, but is presumed as follows. That is, in a polishing agent containing a predetermined amount of ammonium salt, the ammonium salt reacts with silicon nitride to modify and soften the surface of silicon nitride. It is believed that this assists the mechanical action (physical action) of the abrasive grains, enabling silicon nitride to be polished at an excellent polishing rate. In addition to the ammonium salt, the abrasive contains abrasive grains having a positive zeta potential, an iron-containing compound, and an oxidizing agent. can be preferably obtained, it is thought that tungsten materials, silicon oxide and silicon nitride can be polished at an excellent polishing rate.

According to the abrasive according to this embodiment, it is possible to obtain a polishing rate of 80 nm/min or higher for a tungsten material. The polishing rate of the tungsten material may be 90 nm/min or more, 100 nm/min or more, 110 nm/min or more, 120 nm/min or more, 130 nm/min or more, or 140 nm/min or more.

According to the polishing agent according to the present embodiment, a polishing rate of 70 nm/min or higher can be obtained for polishing silicon oxide. The polishing rate of silicon oxide may be 80 nm/min or more, 85 nm/min or more, or 90 nm/min or more.

According to the abrasive according to the present embodiment, a silicon nitride polishing rate of 25 nm/min or more can be obtained. The polishing rate of silicon nitride may be 27 nm/min or more or 30 nm/min or more.

According to one aspect of the abrasive according to the present embodiment, a polishing rate ratio of silicon nitride to silicon oxide (polishing rate of silicon nitride/polishing rate of silicon oxide) of 0.25 or more can be obtained. The polishing rate ratio of silicon nitride to silicon oxide may be 0.30 or more, or 0.35 or more.

The abrasive according to the present embodiment may be used for polishing a surface to be polished containing at least one selected from the group consisting of tungsten material, silicon oxide and silicon nitride. May be used for surface polishing. The polishing agent according to the present embodiment is used for polishing a surface to be polished containing a tungsten material (for example, a surface to be polished of a tungsten film), polishing a surface to be polished containing silicon oxide (for example, a surface to be polished of a silicon oxide film), Alternatively, it may be used for polishing a surface to be polished containing silicon nitride (for example, a surface to be polished of a silicon nitride film). The abrasive according to this embodiment may be used for polishing a surface to be polished containing a tungsten material and at least one selected from the group consisting of silicon oxide and silicon nitride. According to this embodiment, it is possible to provide an application of an abrasive for polishing a surface to be polished containing at least one selected from the group consisting of tungsten material, silicon oxide and silicon nitride.

(abrasive)
The abrasive according to this embodiment contains abrasive grains having a positive zeta potential. By containing abrasive grains having a positive zeta potential, the abrasive can polish tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate.

Whether the abrasive grains have a positive zeta potential (having a positive charge in the abrasive) can be determined by measuring the zeta potential of the abrasive grains in the abrasive. The zeta potential of the abrasive grains in the polishing agent is measured, and if the numerical value exceeds 0 mV, it can be determined that the zeta potential of the abrasive grains is positive.

Examples of abrasive grain constituent materials include silica, alumina, ceria, zirconia, cerium hydroxide, and resin particles. The abrasive grains may contain silica from the viewpoint of facilitating polishing of tungsten material, silicon oxide and silicon nitride at an excellent polishing rate. Abrasive grains containing silica have a higher affinity with tungsten materials, silicon oxide and silicon nitride than other types of abrasive grains, and are believed to increase the frequency of contact with tungsten materials, silicon oxide and silicon nitride. . Therefore, it is believed that the use of abrasive grains containing silica facilitates polishing tungsten materials, silicon oxide, and silicon nitride at excellent polishing rates. In addition, by using abrasive grains containing silica, polishing scratches (scratches appearing on the surface after polishing, hereinafter the same) can be reduced while polishing tungsten materials, silicon oxide and silicon nitride at an excellent polishing rate. can be done.

The content of silica in the abrasive grains is the total mass of the abrasive grains (contained in the abrasive More than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more based on the entire abrasive grain or the entire grain that constitutes the abrasive grain) , 98% by mass or more, or 99% by mass or more. The abrasive grains are made of silica (substantially 100% by mass of the abrasive grains contained in the abrasive are silica, or substantially 100% by mass of one particle that constitutes the abrasive grains is silica (abrasive It may be a)) mode in which one particle that constitutes the grain is a silica particle.

Abrasive grains containing silica include colloidal silica, fumed silica, and the like. The abrasive grains may contain colloidal silica from the viewpoints of easy polishing of tungsten materials, silicon oxide and silicon nitride at an excellent polishing rate, easy reduction of polishing scratches, and easy selection of particle size. . Abrasive grains can be used singly or in combination of two or more. The abrasive may contain, for example, abrasive grains containing silica and abrasive grains containing a constituent material different from silica.

The average particle size (average secondary particle size) of the abrasive grains in the abrasive is 10 nm from the viewpoint that the mechanical action of the abrasive grains is sufficient and the tungsten material, silicon oxide and silicon nitride can be easily polished at an excellent polishing rate. Above, it may be 30 nm or more, 40 nm or more, 50 nm or more, 55 nm or more, or 60 nm or more. The average particle size of the abrasive grains is 200 nm or less, 120 nm or less, 90 nm or less, 80 nm or less, 70 nm or less, 70 nm or less, 65 nm or less, or 60 nm or less from the viewpoint of easily obtaining good dispersion stability of the abrasive grains. you can From these points of view, the average particle size of the abrasive grains may be 10-200 nm, 30-120 nm, or 40-90 nm. The average particle diameter of the abrasive grains may be within the range of the average particle diameter described above in both the case where the abrasive grains contain silica and the case where the abrasive grains contain a constituent material other than silica. .

The average particle size of abrasive grains can be measured by a photon correlation method. The average particle size of the abrasive grains, for example, using COULTER N4SD manufactured by COULTER Electronics, measurement temperature: 20 ° C., solvent refractive index: 1.333 (water), particle refractive index: Unknown (setting), solvent viscosity: 1.005 cp (water), Run Time: 200 seconds, Laser incident angle: 90 °, Intensity (corresponding to scattering intensity, turbidity): Can be measured in the range of 5E + 04 to 4E + 05, Intensity (scattering intensity, turbidity ) is higher than 4E+05, it can be diluted with water and measured. Since colloidal particles are usually obtained in a state of being dispersed in water, they can be diluted appropriately so that the scattering intensity falls within the above-mentioned range for measurement. As a guideline for the content of abrasive grains when measuring the average particle diameter of the abrasive grains, the abrasive grains should be contained in an amount of 0.5 to 2.0% by mass.

The content of abrasive grains may be within the following ranges based on the total mass of the abrasive. The content of the abrasive grains is 0.1% by mass or more and 0.3% by mass, from the viewpoint of easily obtaining sufficient mechanical action of the abrasive grains and facilitating polishing of tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. % by mass or more, 0.4% by mass or more, 0.5% by mass or more, 0.6% by mass or more, 0.8% by mass or more, 1% by mass or more, 1.5% by mass or more, 2% by mass or more, 2 .4% by mass or more, 2.5% by mass or more, 2.8% by mass or more, or 3% by mass or more. The content of abrasive grains is 15 from the viewpoints of avoiding an increase in the viscosity of the abrasive, avoiding agglomeration of abrasive grains, easily reducing polishing scratches, and facilitating handling of the abrasive. % by mass or less, 10% by mass or less, 7% by mass or less, 5% by mass or less, 4% by mass or less, 3.6% by mass or less, 3.2% by mass or less, or 3% by mass or less. From these points of view, the content of abrasive grains may be 0.1 to 15% by mass, 0.5 to 10% by mass, or 1 to 5% by mass.

(ammonium salt)
The abrasive according to this embodiment contains an ammonium salt. By containing an ammonium salt in the polishing agent, tungsten materials, silicon oxide and silicon nitride can be polished at excellent polishing rates.

Ammonium salts may be compounds represented by the general formula (NH ₄ ) _n X (where n is a natural number and X represents a single atom or atomic group). The ammonium salt may be dissociated into an ammonium ion (NH ₄ ⁺ ) and a counter ion (X ⁿ⁻ ) in the polishing agent. Ammonium salts may be free of alkylammonium salts and alkylammonium hydroxides.

Ammonium salts may include inorganic ammonium salts, which are ammonium salts of inorganic acids, and may include organic ammonium salts, which are ammonium salts of organic acids. An ammonium salt can be used individually by 1 type or in combination of 2 or more types.

Examples of inorganic ammonium salts include ammonium salts of monovalent inorganic acids such as ammonium nitrate, ammonium chloride and ammonium bromide; ammonium salts of divalent inorganic acids such as ammonium carbonate, ammonium sulfate and ammonium persulfate; ammonium phosphate and ammonium borate. ammonium salts of trivalent inorganic acids such as The ammonium salt is at least selected from the group consisting of monovalent inorganic acid ammonium salts and divalent inorganic acid ammonium salts from the viewpoint of facilitating polishing of tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. may contain one Ammonium salts may be free of ammonium nitrate and ammonium nitrite, may be free of ammonium nitrate and ammonium sulfate, may be free of ammonium carbonate and ammonium phosphate, may be free of ammonium chlorate, ammonium perchlorate, ammonium bromate, It may be free of ammonium bromate, ammonium iodate, ammonium periodate, ammonium perborate, ammonium permanganate, ammonium monopersulfate, ammonium chromate and ammonium cerium nitrate.

Examples of organic ammonium salts include carboxylic acid ammonium salts and sulfonic acid ammonium salts. Examples of ammonium salts of carboxylic acids include ammonium salts of carboxylic acids having one carboxyl group such as ammonium formate, ammonium acetate, ammonium lactate and ammonium benzoate; carboxylic acids having two carboxyl groups such as ammonium oxalate and ammonium tartrate. and ammonium salts of carboxylic acids having three carboxyl groups, such as ammonium citrate. Ammonium salts of sulfonic acid include ammonium methanesulfonate, ammonium benzenesulfonate, and ammonium toluenesulfonate. The ammonium salt may include an ammonium salt of a carboxylic acid, or an ammonium salt of a carboxylic acid having one carboxyl group, from the viewpoint of easily polishing tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. Ammonium salts may be free of ammonium acetate and free of ammonium citrate and ammonium oxalate.

The ammonium salt is at least one selected from the group consisting of monovalent acid ammonium salts and divalent acid ammonium salts from the viewpoint of facilitating polishing of tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. ammonium carbonate, ammonium acetate, ammonium chloride, and ammonium nitrate, and at least one selected from the group consisting of ammonium carbonate, ammonium acetate, and ammonium nitrate. . The ammonium salt may be an embodiment containing ammonium carbonate, an embodiment containing ammonium acetate, or an embodiment containing ammonium nitrate.

The content of the ammonium salt is 0.01% by mass or more and less than 0.20% by mass based on the total mass of the abrasive. With the ammonium salt content of 0.01% by mass or more and less than 0.20% by mass, tungsten material, silicon oxide and silicon nitride can be polished at an excellent polishing rate.

The content of the ammonium salt may be within the following ranges based on the total mass of the abrasive, from the viewpoint of facilitating polishing of tungsten material, silicon oxide and silicon nitride at an excellent polishing rate. The content of the ammonium salt is 0.02% by mass or more, 0.03% by mass or more, 0.04% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.10% by mass or more, 0 0.12 mass % or more, 0.14 mass % or more, or 0.15 mass % or more. The content of the ammonium salt is 0.18% by mass or less, 0.15% by mass or less, 0.12% by mass or less, 0.10% by mass or less, less than 0.10% by mass, 0.08% by mass or less, 0 0.06 wt% or less, 0.05 wt% or less, less than 0.05 wt%, 0.03 wt% or less, or 0.02 wt% or less. From these points of view, the content of the ammonium salt is 0.01 to 0.18% by mass, 0.01 to 0.15% by mass, 0.02 to 0.12% by mass, based on the total mass of the abrasive. , or 0.03 to 0.10 mass %.

The mass ratio R1 of the ammonium salt content to the abrasive grain content (ammonium salt content/abrasive grain content) is from the viewpoint of facilitating polishing of tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. It may be in the following range. Mass ratio R1 may be 0.001 or more, 0.003 or more, 0.005 or more, 0.01 or more, 0.015 or more, 0.02 or more, 0.04 or more, or 0.05 or more . The mass ratio R1 is 1 or less, 0.5 or less, 0.1 or less, 0.05 or less, 0.03 or less, 0.02 or less, 0.01 or less, 0.008 or less, 0.005 or less, or It may be 0.004 or less. From these viewpoints, the mass ratio R1 may be 0.001 to 1, 0.003 to 0.5, or 0.003 to 0.1.

(Iron-containing compound)
The abrasive according to the present embodiment contains an iron-containing compound (a compound containing an iron component, excluding abrasive grains or compounds corresponding to ammonium salts). The iron-containing compound may include an iron-ion-containing compound containing iron ions, and may include an iron-ion donor that provides iron ions in the abrasive. The iron ions may be ferric ions (Fe ²⁺ ). By containing an iron-containing compound in the polishing agent, ie, by containing an iron component (eg, iron ions) in the polishing agent, tungsten materials can be polished with excellent polishing rates.

The iron-containing compound may include iron salts as iron ion donors. The iron ion donor may be dissociated into iron ions and a counter anion component derived from the iron ion donor in the abrasive. Although iron-containing compounds (e.g., iron ion donors) may function as oxidizing agents, compounds that are both iron-containing compounds and oxidizing agents are herein considered iron-containing compounds. .

The iron-containing compound may include inorganic salts of iron and may include organic salts of iron as iron ion donors. Inorganic salts of iron include iron nitrate, iron sulfate, iron boride, iron chloride, iron bromide, iron iodide, iron phosphate, iron fluoride and the like. Organic salts of iron include iron triformate, iron diformate, iron acetate, iron propionate, iron oxalate, iron malonate, iron succinate, iron malate, iron glutarate, iron tartrate, iron lactate, citric acid Iron etc. are mentioned. The iron-containing compound may contain a ligand such as water, and may be a hydrate or the like. The iron-containing compound may contain an inorganic salt of iron from the viewpoints of easy polishing of the tungsten material at an excellent polishing rate, the ability to suppress contamination of the polishing apparatus and the substrate, and the cost. It may contain at least one selected from the group consisting of iron and its hydrates, and may contain iron nitrate nonahydrate. An iron-containing compound can be used individually by 1 type or in combination of 2 or more types.

The content of the iron-containing compound may be within the following ranges based on the total mass of the abrasive. The content of the iron-containing compound is 0.0001% by mass or more, 0.0003% by mass or more, 0.0005% by mass or more, and 0.001% by mass from the viewpoint of easily polishing tungsten materials and silicon oxide at an excellent polishing rate. % or more, 0.003 mass % or more, 0.005 mass % or more, 0.007 mass % or more, 0.008 mass % or more, 0.010 mass % or more, 0.012 mass % or more, 0.014 mass % Above, it may be 0.015% by mass or more, or 0.016% by mass or more. The content of the iron-containing compound is 0.1% by mass or less, 0.05% by mass or less, 0.03% by mass or less, 0.02% by mass or less, from the viewpoint of easily suppressing decomposition and deterioration of the oxidizing agent and the like. It may be 0.018% by mass or less, 0.016% by mass or less, 0.015% by mass or less, 0.01% by mass or less, 0.009% by mass or less, or 0.008% by mass or less. From these viewpoints, the content of the iron-containing compound is 0.0001 to 0.1 mass%, 0.0003 to 0.1 mass%, 0.0005 to 0.05 mass%, 0.001 to 0.02 % by weight, or 0.001 to 0.01% by weight. The content of the iron-containing compound may be adjusted so as to satisfy the range of iron ion content in the polishing agent, which will be described later.

The mass ratio R2 of the content of the iron-containing compound to the content of the abrasive grains (content of iron-containing compound/content of abrasive grains) may be within the following range. The mass ratio R2 is 0.0001 or more, 0.0005 or more, 0.001 or more, 0.002 or more, 0.0025 or more, and 0.003 from the viewpoint of easily polishing tungsten material and silicon oxide at an excellent polishing rate. Above, it may be 0.004 or more, or 0.005 or more. The mass ratio R2 is 0.1 or less, 0.05 or less, 0.01 or less, 0.008 or less, 0.006 or less, 0.005 or less from the viewpoint of easily suppressing the occurrence of decomposition and deterioration of the oxidizing agent or the like. , 0.004 or less, or 0.003 or less. From these points of view, the mass ratio R2 may be 0.0001 to 0.1, 0.001 to 0.05, or 0.002 to 0.01.

The mass ratio R3 of the content of the iron-containing compound to the content of the ammonium salt (content of iron-containing compound/content of ammonium salt) is from the viewpoint that it is easy to polish tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. to the following range. Mass ratio R3 is 0.005 or more, 0.01 or more, 0.03 or more, 0.05 or more, 0.1 or more, 0.15 or more, 0.3 or more, 0.5 or more, 0.7 or more, Alternatively, it may be 0.8 or more. The mass ratio R3 may be 5 or less, 1 or less, 0.8 or less, 0.6 or less, 0.4 or less, 0.2 or less, 0.1 or less, or 0.06 or less. From these points of view, the mass ratio R3 may be 0.005 to 5, 0.01 to 1, or 0.03 to 0.8.

The content of iron ions may be within the following ranges based on the total mass of the abrasive. The content of iron ions is 0.0001% by mass or more, 0.0003% by mass or more, 0.0005% by mass or more, and 0.001% by mass, from the viewpoint of facilitating polishing of tungsten materials and silicon oxide at an excellent polishing rate. Above, it may be 0.0011% by mass or more, 0.0015% by mass or more, 0.002% by mass or more, or 0.0022% by mass or more. The content of iron ions is 0.1% by mass or less, 0.05% by mass or less, 0.01% by mass or less, 0.005% by mass or less, 0 from the viewpoint of easily suppressing decomposition and deterioration of oxidizing agents and the like. 0.003% by mass or less, 0.0025% by mass or less, 0.002% by mass or less, 0.0015% by mass or less, or 0.0012% by mass or less. From these viewpoints, the content of iron ions is 0.0001 to 0.1% by mass, 0.0003 to 0.1% by mass, 0.0005 to 0.05% by mass, or 0.001 to 0.05% by mass. 01% by mass.

(Oxidant)
The polishing agent according to the present embodiment contains an oxidizing agent (excluding ammonium salts or compounds corresponding to iron-containing compounds). By including an oxidizing agent in the polishing agent, the tungsten material can be polished at an excellent polishing rate.

Examples of the oxidizing agent include hydrogen peroxide; peracetic acid; perbenzoic acid; and permanganate compounds such as potassium permanganate. The oxidizing agent may include hydrogen peroxide from the viewpoint of cost and the possibility of being supplied in liquid form. An oxidizing agent can be used individually by 1 type or in combination of 2 or more types.

The content of hydrogen peroxide in the oxidizing agent is more than 50% by mass, 60% by mass or more, 70% by mass or more, and 80% by mass, based on the total mass of the oxidizing agent, from the viewpoint of facilitating polishing of the tungsten material at an excellent polishing rate. % by mass or more, 90% by mass or more, or 95% by mass or more. The oxidizing agent may be hydrogen peroxide (substantially 100 mass % of the oxidizing agent contained in the polishing agent is hydrogen peroxide).

The content of the oxidizing agent may be within the following ranges based on the total mass of the abrasive. The content of the oxidizing agent is 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 0.6% by mass or more, and 0% by mass, from the viewpoint of easily polishing the tungsten material at an excellent polishing rate. 0.7% by mass or more, 0.8% by mass or more, or 0.9% by mass or more. The content of the oxidizing agent is 10% by mass or less, 7% by mass or less, 5% by mass or less, and 3% by mass from the viewpoint of easily suppressing the progress of etching of the tungsten material and from the viewpoint of easily controlling the polishing rate of the tungsten material. %, 4% by mass or less, 2% by mass or less, 1.5% by mass or less, 1% by mass or less, or 0.9% by mass or less. From these viewpoints, the content of the oxidizing agent is 0.1 to 10% by mass, 0.3 to 7% by mass, 0.5% to 3% by mass, or 0.6 to 4% by mass. you can

The mass ratio R4 of the content of the oxidizing agent to the content of the abrasive grains (content of the oxidizing agent/content of the abrasive grains) may be within the following range. The mass ratio R4 is 0.01 or more, 0.05 or more, 0.1 or more, 0.2 or more, 0.25 or more, or 0.3 or more, from the viewpoint of easily polishing the tungsten material at an excellent polishing rate. can be The mass ratio R4 is 5 or less, 3 or less, 1 or less, 0.6 or less, 0.5 or less, from the viewpoint of easily suppressing the progress of etching of the tungsten material and from the viewpoint of easily controlling the polishing rate of the tungsten material. It may be 0.4 or less, 0.35 or less, or 0.3 or less. From these points of view, the mass ratio R4 may be 0.01-5, 0.05-3, or 0.1-1.
(acid component)
The abrasive according to this embodiment may further contain an acid component. By containing an acid component in the abrasive, it is easy to improve the dispersibility and stability of the aqueous dispersion and the polishing rate. The acid component can be organic acids, inorganic acids, and the like. The abrasive may contain at least one selected from the group consisting of organic acids and inorganic acids. An acid component can be used individually by 1 type or in combination of 2 or more types.

Organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid , phthalic acid, malic acid, tartaric acid, citric acid and the like. Inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, chromic acid and the like. Organic acids may include malonic acid.

The content of the organic acid may be within the following ranges based on the total mass of the abrasive. The content of the organic acid is 0.001% by mass or more, 0.005% by mass or more, 0.01% by mass or more, 0.02% by mass or more, 0.03% by mass or more, or 0.04% by mass or more can be The content of the organic acid is 1% by mass or less, 0.5% by mass or less, 0.1% by mass or less, 0.08% by mass or less, 0.06% by mass or less, 0.05% by mass or less, or 0 04% by mass or less. From these points of view, the organic acid content may be 0.001 to 1% by mass.

((Meth)acrylic acid-based polymer)
The abrasive according to the present embodiment may further contain a (meth)acrylic acid-based polymer ((meth)acrylic acid polymer, excluding compounds corresponding to ammonium salts). A (meth)acrylic acid-based polymer is a polymer having structural units derived from (meth)acrylic acid. Examples of (meth)acrylic acid-based polymers include homopolymers of (meth)acrylic acid (polyacrylic acid and polymethacrylic acid), and compositions containing (meth)acrylic acid and other monomer components. Copolymers obtained by polymerization (copolymers having structural units derived from (meth)acrylic acid; copolymers of (meth)acrylic acid and other monomer components). Examples of monomer components copolymerizable with (meth)acrylic acid include alkyl (meth)acrylates such as methyl (meth)acrylate. The polymerization form of the (meth)acrylic acid-based polymer may be a block copolymer, a random copolymer, or the like.

(Meth)acrylic acid-based polymer is a homopolymer of acrylic acid, a homopolymer of methacrylic acid, from the viewpoint of easy polishing of tungsten materials at an excellent polishing rate and from the viewpoint of easy reduction of erosion. , and at least selected from the group consisting of a copolymer obtained by polymerizing a composition containing acrylic acid and methacrylic acid as monomer components (hereinafter also referred to as "acrylic acid / methacrylic acid copolymer") may contain one The composition for obtaining the acrylic acid/methacrylic acid copolymer may contain monomer components (methyl acrylate, methyl methacrylate, etc.) other than (meth)acrylic acid.

A copolymer having a structural unit derived from (meth)acrylic acid is obtained by using a monomer component having a functional group such as an amide group, a hydroxyl group, a urea group, a carboxyl group, a methyl group, a sulfo group, etc. , a hydroxy group, a urea group, a carboxyl group, a methyl group, a sulfo group, and the like. For example, an acrylic acid/methacrylic acid copolymer has an amide group, a hydroxy group, a urea group, a carboxyl group, a methyl group, a sulfo group, etc. by using a monomer component other than (meth)acrylic acid. good.

When an acrylic acid/methacrylic acid copolymer is used, the copolymerization ratio of acrylic acid to methacrylic acid (molar ratio: acrylic acid/methacrylic acid) is not particularly limited, but may be 1/99 to 95/5. . The copolymerization ratio (acrylic acid/methacrylic acid) is 1/99 to 40/, from the viewpoint of easily polishing the tungsten material at an excellent polishing rate, from the viewpoint of easily suppressing etching of the tungsten material, and from the viewpoint of excellent solubility. 60.

The (meth)acrylic acid-based polymer may be a water-soluble polymer. A “water-soluble polymer” is defined as a polymer that dissolves in 100 g of water at 25° C. in an amount of 0.1 g or more. The (meth)acrylic acid-based polymer can be used alone or in combination of two or more.

The weight average molecular weight of the (meth)acrylic acid-based polymer may be 1000 or more from the viewpoint of easily suppressing etching of the tungsten material. The weight average molecular weight of the (meth)acrylic acid-based polymer may be 2000 or more or 4000 or more from the viewpoint of facilitating polishing of the tungsten material at an excellent polishing rate. The upper limit of the weight average molecular weight of the (meth)acrylic acid-based polymer is not particularly limited, but from the viewpoint of excellent solubility in the abrasive and storage stability of the abrasive, it is 5 million or less, 1 million or less, or It may be 500,000 or less. From these viewpoints, the weight average molecular weight of the (meth)acrylic acid-based polymer may be 1,000 to 5,000,000.

The weight average molecular weight (Mw) can be measured using gel permeation chromatography (GPC) under the following conditions, for example.
[conditions]
Sample: 10 μL
Standard polystyrene: manufactured by Tosoh Corporation, standard polystyrene (molecular weight: 190000, 17900, 9100, 2980, 578, 474, 370, 266)
Detector: RI-monitor manufactured by Hitachi, Ltd., trade name “L-3000”
Integrator: GPC integrator manufactured by Hitachi, Ltd., trade name “D-2200”
Pump: manufactured by Hitachi, Ltd., trade name "L-6000"
Degas device: manufactured by Showa Denko K.K., trade name “Shodex DEGAS”
Column: Hitachi Chemical Co., Ltd., trade names "GL-R440", "GL-R430", "GL-R420" are used by connecting in this order Eluent: Tetrahydrofuran (THF)
Measurement temperature: 23°C
Flow rate: 1.75 mL/min Measurement time: 45 minutes

The content of the (meth)acrylic polymer may be within the following ranges based on the total mass of the abrasive. The content of the (meth)acrylic acid polymer may be 0.005% by mass or more, 0.01% by mass or more, or 0.05% by mass or more from the viewpoint of easily suppressing etching of the tungsten material. . The content of the (meth)acrylic acid-based polymer may be 2% by mass or less or 1% by mass or less from the viewpoint of easily polishing tungsten materials, silicon oxide, and silicon nitride at an excellent polishing rate. From these viewpoints, the content of the (meth)acrylic acid-based polymer may be 0.005 to 2% by mass, 0.01 to 1% by mass, or 0.05 to 1% by mass.

(corrosion inhibitor)
The abrasive according to this embodiment may further contain a corrosion inhibitor (excluding compounds corresponding to ammonium salts). By using the corrosion inhibitor, it is easy to improve the polishing rate of the tungsten material and the etching resistance of the tungsten material.

Examples of corrosion inhibitors include compounds having a triazole skeleton, compounds having an imidazole skeleton, compounds having a pyrimidine skeleton, compounds having a guanidine skeleton, compounds having a thiazole skeleton, compounds having a pyrazole skeleton, and the like. A corrosion inhibitor can be used individually by 1 type or in combination of 2 or more types. The corrosion inhibitor is selected from the group consisting of a compound having a triazole skeleton and a compound having an imidazole skeleton, from the viewpoint of easily polishing the tungsten material at an excellent polishing rate and from the viewpoint of easily suppressing etching of the tungsten material. At least one kind may be included.

Compounds having a triazole skeleton include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, benzotriazole, 1-hydroxybenzotriazole, 1-dihydroxy propylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxyl (-1H-) benzotriazole, 4-carboxyl (-1H-) benzotriazole methyl ester, 4-carboxyl (-1H -) benzotriazole butyl ester, 4-carboxyl (-1H-) benzotriazole octyl ester, 5-hexylbenzotriazole, tolyltriazole, naphthotriazole, bis[(1-benzotriazolyl)methyl]phosphonic acid, 3-amino triazole, 5-methylbenzotriazole and the like. Corrosion inhibitors are 1,2,3-triazole, 1,2,4-triazole, 3-amino, from the viewpoint of easily polishing the tungsten material at an excellent polishing rate and from the viewpoint of easily suppressing the etching of the tungsten material. -at least one selected from the group consisting of 1H-1,2,4-triazole, 4-amino-4H-1,2,4-triazole, benzotriazole, 1-hydroxybenzotriazole, and 5-methylbenzotriazole may contain.

Compounds having an imidazole skeleton include 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-propylimidazole, 2-butylimidazole, 4-methylimidazole, 4-ethylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-undecylimidazole, 2-aminoimidazole and the like.

Examples of compounds having a pyrimidine skeleton include pyrimidine, [1,2,4]-triazolo[1,5-a]pyrimidine, 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2 -a]pyrimidine, 1,3-diphenyl-pyrimidine-2,4,6-trione, 1,4,5,6-tetrahydropyrimidine, 2,4,5,6-tetraaminopyrimidine sulfate, 2,4 ,5-trihydroxypyrimidine, 2,4,6-triaminopyrimidine, 2,4,6-trichloropyrimidine, 2,4,6-trimethoxypyrimidine, 2,4,6-triphenylpyrimidine, 2,4- Diamino-6-hydroxylpyrimidine, 2,4-diaminopyrimidine, 2-acetamidopyrimidine, 2-aminopyrimidine, 2-methyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine , 2-methylsulfanyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, 2-methylsulfanyl-5,7-diphenyl-4,7-dihydro-[1 ,2,4]triazolo[1,5-a]pyrimidine, 4-aminopyrazolo[3,4-d]pyrimidine and the like.

Compounds having a guanidine skeleton include 1,3-diphenylguanidine and 1-methyl-3-nitroguanidine.

Compounds having a thiazole skeleton include 2-mercaptobenzothiazole, 2-aminothiazole, 4,5-dimethylthiazole, 2-amino-2-thiazoline, 2,4-dimethylthiazole, 2-amino-4- Methylthiazole etc. are mentioned.

Compounds having a pyrazole skeleton include 3,5-dimethylpyrazole, 3-methyl-5-pyrazolone, 3-amino-5-methylpyrazole, 3-amino-5-hydroxypyrazole, 3-amino-5-methylpyrazole and the like. is mentioned.

The content of the corrosion inhibitor may be within the following ranges based on the total mass of the abrasive. The content of the corrosion inhibitor may be 0.005% by mass or more or 0.01% by mass or more from the viewpoint of easily suppressing etching of the tungsten material. The content of the corrosion inhibitor may be 5% by mass or less or 3% by mass or less from the viewpoint of facilitating polishing of the tungsten material at an excellent polishing rate. From these points of view, the content of the corrosion inhibitor may be 0.005 to 5 mass % or 0.01 to 3 mass %.

(Other additives)
The polishing agent according to the present embodiment further contains additives other than the above components for the purpose of improving the dispersibility of abrasive grains in the polishing agent, improving the chemical stability of the polishing agent, improving the polishing speed, and the like. can do. Examples of such additives include base components, antifoaming agents, and the like.

(water)
The abrasive according to this embodiment can contain water. Water may act as a dispersing medium or solvent for other ingredients. Water includes pure water, ultrapure water, distilled water, and the like. The content of water in the abrasive may be the balance of the abrasive excluding the content of other ingredients.

(pH of abrasive)
The pH of the polishing agent according to the present embodiment is 2.0 or more, 2.1 or more, 2.2 or more, 2.4 or more, 2.6 or more, from the viewpoint of easily polishing a tungsten material at an excellent polishing rate. It may be 2.7 or more, or 2.8 or more. The pH of the polishing agent is 6.0 or less, 5.8 or less, 5.6 or less, 5.0 or less, 4.0 or less, 3.5 or less from the viewpoint of easily obtaining excellent dispersion stability of the abrasive grains. , 3.0 or less, less than 3.0, 2.9 or less, or 2.8 or less. From these points of view, the pH of the abrasive may be 2.0-6.0, 2.0-5.0, or 2.0-4.0. The pH of the abrasive is defined as the pH at a liquid temperature of 25°C.

The pH of the abrasive can be measured with a pH meter using a common glass electrode. The pH of the abrasive can be measured by, for example, Model (F-51), trade name of HORIBA, Ltd. For example, a phthalate pH standard solution (pH: 4.01), a neutral phosphate pH standard solution (pH: 6.86), and a borate pH standard solution (pH: 9.18) After calibrating the pH meter at three points using it as a standard solution, the pH of the abrasive can be obtained by placing the electrode of the pH meter in the abrasive and measuring the value after 2 minutes or more have passed and the pH has stabilized. . At this time, the liquid temperature of the pH standard solution (standard buffer solution) and the abrasive is set at 25°C.

The pH of the polishing agent can be adjusted, for example, by the above-mentioned acid components; basic components such as ammonia, sodium hydroxide, potassium hydroxide, and TMAH (tetramethylammonium hydroxide).

(Preservation method)
The abrasive according to the present embodiment may be prepared as an abrasive storage liquid from the viewpoint of suppressing costs related to storage, transportation, storage, and the like. The polishing agent storage liquid provides the polishing agent according to the present embodiment by diluting with water at the time of use. The abrasive stock solution is stored with the amount of water reduced from the planned amount at the time of use, and is diluted with water (for example, diluted to 1.5 times or more on the basis of mass) before or at the time of use. , can be used as an abrasive. The abrasive stock solution may be diluted with water immediately before polishing to form the abrasive, or the stock solution and water may be supplied onto the polishing platen and diluted on the polishing platen to form the abrasive.

The abrasive according to the present embodiment may be stored as a one-component abrasive containing at least abrasive grains, an ammonium salt, an iron-containing compound, an oxidizing agent, and water. ) and an additive liquid (second liquid) containing an ammonium salt, an iron-containing compound, and an oxidizing agent. In the multi-liquid polishing agent, the constituent components of the polishing agent are divided into the slurry and the additive liquid so that the slurry and the additive liquid are mixed to obtain the polishing agent according to the present embodiment. The slurry, for example, contains at least abrasive grains and water. The additive liquid includes, for example, at least an ammonium salt, an iron-containing compound, an oxidizing agent, and water. Additives other than abrasive grains (ammonium salts, iron-containing compounds, oxidizing agents, etc.) may be contained in the additive liquid of the slurry and the additive liquid. The constituents of the abrasive may be divided into three or more liquids and stored.

In the multi-liquid polishing agent, the slurry and additive liquid may be mixed just before or during polishing to prepare the polishing agent. The slurry and the additive liquid in the multi-liquid polishing agent may be separately supplied onto the polishing platen, and the surface to be polished may be polished using the polishing agent obtained by mixing the slurry and the additive liquid on the polishing platen. .

The method of blending and diluting the abrasive according to the present embodiment is not particularly limited. For example, the abrasive can be prepared by dispersing or dissolving each component by stirring with a blade stirrer, ultrasonic dispersion, or the like. can. Also, the order of mixing other components with water is not limited.

<Polishing method>
The polishing method according to this embodiment includes a polishing step of polishing a surface to be polished using the abrasive according to this embodiment. The abrasive may be an abrasive obtained by diluting a polishing agent storage liquid with water, or may be an abrasive obtained by mixing a slurry and an additive liquid in a multi-liquid type abrasive. The object to be polished having the surface to be polished may be in the form of a film (film to be polished). The polished surface may include a tungsten material (eg, tungsten) and may include a layer containing a tungsten material. The surface to be polished may contain at least one selected from the group consisting of silicon oxide and silicon nitride, and may contain at least one selected from the group consisting of a layer containing silicon oxide and a layer containing silicon nitride. . In the polishing step, an abrasive can be used to polish and remove at least a portion of the film-to-be-polished (for example, tungsten film) of a substrate (for example, a substrate for manufacturing semiconductor devices) having the film-to-be-polished.

The polishing step may be a step of polishing a surface to be polished containing a barrier material (for example, a barrier metal) using the abrasive according to this embodiment. The polishing step may be, for example, a step of polishing a surface to be polished containing at least one selected from the group consisting of tungsten material, silicon oxide and silicon nitride, and a barrier material. Examples of barrier materials include tantalum, tantalum alloys, tantalum compounds (tantalum oxide, tantalum nitride, etc.), titanium, titanium alloys, titanium compounds (titanium oxide, titanium nitride, etc.).

In the polishing step, polishing a surface to be polished containing a tungsten material, polishing a surface to be polished containing silicon oxide, polishing a surface to be polished containing silicon nitride, and polishing a surface to be polished containing a barrier material. The polishing steps may not be clearly distinguished from each other, and when at least two of these steps are performed simultaneously, the polishing agent used in each step may be the same or different. may be

In the polishing step, for example, the surface to be polished of the substrate is pressed against the polishing cloth (polishing pad) of the polishing surface plate, and a predetermined pressure is applied to the substrate from the surface of the substrate opposite to the surface to be polished (back surface of the substrate). In this state, the abrasive according to this embodiment is supplied between the surface to be polished of the substrate and the polishing cloth, and the substrate is moved relative to the polishing platen to polish the surface to be polished. It's okay. The polishing cloth is not particularly limited, but general nonwoven fabric, foamed polyurethane, porous fluororesin, and the like can be used.

In the polishing method according to the present embodiment, the polishing apparatus generally includes a polishing surface plate to which a motor capable of changing the number of revolutions is attached, to which a polishing cloth can be attached, and a holder for holding the substrate. A typical polishing device can be used. Polishing conditions are not particularly limited, but the rotation speed of the polishing platen may be adjusted to a low rotation speed of 200 min ⁻¹ (200 rpm) or less so that the substrate does not fly out of the polishing platen. During polishing, the polishing cloth may be continuously supplied with abrasive by a pump or the like. There is no limit to the amount of abrasive to be supplied, but the amount may be such that the surface of the polishing cloth is always covered with the abrasive and the particles formed by the progress of polishing are continuously discharged.

The polishing method according to the present embodiment may include a conditioning step for conditioning the polishing cloth before each polishing step in order to perform polishing (such as CMP) with the surface condition of the polishing cloth always the same. In the conditioning step, for example, a dresser with diamond particles is used to condition the polishing pad with a liquid containing at least water.

The polishing method according to the present embodiment may include a cleaning step of cleaning the substrate (object to be polished) after polishing. In the cleaning step, for example, the substrate after polishing can be thoroughly washed in running water, and then dried after removing water droplets adhering to the substrate using a spin dryer or the like. In addition, a known cleaning method (for example, a method of removing deposits on the substrate by running a commercially available cleaning liquid on the surface of the substrate and pressing the brush made of polyurethane against the substrate with a constant pressure while rotating). After performing the above, the substrate may be dried.

A method for manufacturing a component according to this embodiment includes a singulation step of singulating a substrate that has been polished by a polishing method according to this embodiment. The singulation step may be, for example, a step of obtaining chips (eg, semiconductor chips) by dicing a wafer (eg, semiconductor wafer) polished by the polishing method according to the present embodiment. The component manufacturing method according to the present embodiment may include a step of polishing the substrate by the polishing method according to the present embodiment before the singulation step. A component according to this embodiment is, for example, a chip (for example, a semiconductor chip). A component according to this embodiment is a component obtained by a method for manufacturing a component according to this embodiment. An electronic device according to this embodiment includes the component according to this embodiment.

EXAMPLES The present disclosure will be described in more detail below with reference to Examples, but the present disclosure is not limited to these Examples.

<Preparation of abrasive>
(Examples 1 to 6)
The abrasives of Examples 1-6 were prepared by mixing the components in Table 1. Specifically, an ammonium salt, malonic acid (acid component), and iron nitrate nonahydrate (iron-containing compound, iron ion donor) were placed in a container. Next, ultrapure water was poured into the container and stirred to dissolve each component. Next, silica particles 1 (abrasive grains; colloidal silica having a positive zeta potential and an average particle diameter of 60 nm) were added. Finally, the abrasive was prepared by adding hydrogen peroxide (an oxidizing agent). The content of each component was the amount (unit: mass %) shown in Table 1, and the balance was water (ultrapure water).

(Comparative example 1)
A polishing slurry was obtained in the same manner as in Example 1, except that no ammonium salt was used.

(Comparative example 2)
A polishing slurry was obtained in the same manner as in Example 1, except that the content of ammonium carbonate was changed to 0.20% by mass.

(Comparative Example 3)
A polishing slurry was obtained in the same manner as in Example 1, except that the content of ammonium carbonate was changed to 0.005% by mass.

(Comparative Example 4)
A polishing slurry was obtained in the same manner as in Example 1, except that no abrasive grains were used.

(Comparative Example 5)
A polishing slurry was obtained in the same manner as in Example 1, except that no oxidizing agent was used.

(Comparative Example 6)
A polishing slurry was obtained in the same manner as in Example 1 except that silica particles 2 (abrasive grains; colloidal silica having a negative zeta potential and an average particle diameter of 70 nm) were used instead of the silica particles 1.

(Comparative Example 7)
A polishing agent was obtained in the same manner as in Example 1, except that phosphoric acid was used instead of ammonium carbonate.

(Comparative Example 8)
A polishing slurry was obtained in the same manner as in Example 1, except that no iron-containing compound was used.

<pH measurement>
The pH of each abrasive was measured according to the following.
Measuring instrument: pH meter (Horiba Ltd., trade name: Model (F-51))
Calibration solutions: phthalate pH standard solution (pH: 4.01 (25°C)), neutral phosphate pH standard solution (pH 6.86 (25°C)), and borate pH standard solution (pH 9.0). 18 (25°C))
Measurement temperature: 25°C
Measurement method: After three-point calibration using a calibration solution, the electrode was placed in a polishing agent, allowed to stand at 25°C for 2 minutes or more, and the pH was measured after it stabilized.

<Evaluation>
As evaluation substrates, a blanket substrate having a tungsten film, a blanket substrate having a silicon oxide film, and a blanket substrate having a silicon nitride film were used. Polishing of these substrates was performed using the abrasives described above.

As a polishing and cleaning device, a CMP polisher Reflexion LK (manufactured by APPLIED MATERIALS) was used. As the polishing cloth, a polishing cloth made of foamed polyurethane resin (trade name: IC1010, manufactured by Rohm and Haas) was used. The rotation speed of the surface plate was adjusted to 93 times/min, the rotation speed of the head to 87 times/min, the polishing pressure to 21 kPa, and the supply amount of the abrasive to 200 mL/min. The polishing time was 60 seconds.

A tungsten polishing rate was calculated using a blanket substrate having a tungsten film. The film thickness of the tungsten film before and after polishing is measured using a metal film thickness measuring device (manufactured by Hitachi Kokusai Denki Co., Ltd., model number VR-120/08S), and the difference in film thickness is divided by the polishing time. Velocity was calculated. The results are shown in Tables 1 and 2.

The polishing rate of silicon oxide was calculated using a blanket substrate having a silicon oxide film, and the polishing rate of silicon nitride was calculated using a blanket substrate having a silicon nitride film. The film thicknesses of the silicon oxide film and the silicon nitride film before and after polishing were measured using a film thickness measuring device F-80 (manufactured by Filmetrics, Inc.), and the polishing rate was obtained by dividing the difference in film thickness by the polishing time. Calculated. Also, the polishing rate ratio of silicon nitride to silicon oxide was calculated. The results are shown in Tables 1 and 2.

As shown in Table 1, in Examples 1 to 6, the polishing rate for tungsten was 80 nm/min or higher, the polishing rate for silicon oxide was 70 nm/min or higher, and the polishing rate for silicon nitride was 25 nm/min or higher. is. Therefore, in Examples 1 to 6, tungsten, silicon oxide and silicon nitride can be polished at excellent polishing rates.

As shown in Table 2, in Comparative Examples 1 and 7 in which no ammonium salt was used, and in Comparative Example 3 in which the ammonium salt content was 0.005% by mass, the polishing rate of silicon nitride was lower than that in Examples 1 to 6. is also small. It is considered that this is because the surface modification action of silicon nitride cannot be obtained.
In Comparative Example 2, in which the ammonium salt content is 0.20% by mass, the silicon nitride polishing rate is higher than the results of Example 1 and the like, but it is found that a sufficient silicon oxide polishing rate is not obtained. It is believed that this is because the mechanical action of the abrasive grains during polishing of silicon oxide is reduced.
It can be seen that Comparative Example 4, which does not use abrasive grains, does not provide a sufficient polishing rate for tungsten, silicon oxide and silicon nitride. It is considered that this is because the mechanical action of the abrasive grains cannot be obtained.
It can be seen that in Comparative Example 5 in which no oxidizing agent is used, a sufficient polishing rate for tungsten cannot be obtained. It is believed that this is because tungsten could not be polished due to lack of chemical action due to the absence of an oxidizing agent.
In Comparative Example 6, which used abrasive grains with a negative zeta potential, the polishing rate of silicon nitride was higher than that of Examples 1 to 6, but it was found that sufficient polishing rates of tungsten and silicon oxide could not be obtained. . This is because the surfaces of tungsten and silicon oxide are considered to exhibit a negative surface charge, so that electrostatic repulsion acts between the abrasive grains and tungsten and between the abrasive grains and silicon oxide, This is probably because the frequency of contact between grains and tungsten and the frequency of contact between abrasive grains and silicon oxide decreased.
It can be seen that in Comparative Example 8, which does not use an iron-containing compound, a sufficient polishing rate for tungsten cannot be obtained. It is believed that this is because tungsten could not be polished due to insufficient chemical action (for example, oxidation action) due to the absence of an iron-containing compound.

DESCRIPTION OF SYMBOLS 1... Insulating member, 2... Barrier member, 3... Tungsten member, 10... Base|substrate.

Claims (13)

containing abrasive grains, an ammonium salt, an iron-containing compound, and an oxidizing agent,
The abrasive grains have a positive zeta potential,
the ammonium salt comprises ammonium carbonate;
An abrasive for tungsten materials, wherein the content of the ammonium salt is 0.01% by mass or more and less than 0.20% by mass based on the total mass of the abrasive. containing abrasive grains, an ammonium salt, an iron-containing compound, and an oxidizing agent,
The abrasive grains have a positive zeta potential,
the ammonium salt comprises ammonium acetate;
An abrasive for tungsten materials, wherein the content of the ammonium salt is 0.01% by mass or more and less than 0.20% by mass based on the total mass of the abrasive. containing abrasive grains, an ammonium salt, an iron-containing compound, and an oxidizing agent,
The abrasive grains have a positive zeta potential,
the ammonium salt comprises ammonium nitrate,
An abrasive for tungsten materials, wherein the content of the ammonium salt is 0.01% by mass or more and less than 0.20% by mass based on the total mass of the abrasive. The abrasive according to any one of claims 1 to 3 , wherein said abrasive grains contain silica. The abrasive according to any one of claims 1 to 4 , wherein the abrasive grains contain colloidal silica. The abrasive according to any one of claims 1 to 5 , wherein the iron-containing compound contains at least one selected from the group consisting of iron nitrate and hydrates thereof. The abrasive according to any one of claims 1 to 6 , wherein the content of said iron-containing compound is 0.0001 to 0.1% by weight based on the total weight of the abrasive. The abrasive of any one of claims 1-7 , wherein the oxidizing agent comprises hydrogen peroxide. The abrasive according to any one of claims 1 to 8 , which has a pH of 2.0 to 5.0. The abrasive according to any one of claims 1 to 9 , which is used for polishing a surface to be polished containing a tungsten material and at least one selected from the group consisting of silicon oxide and silicon nitride. A polishing method comprising polishing a surface to be polished using the abrasive according to any one of claims 1 to 10 . 12. The polishing method according to claim 11 , wherein said surface to be polished comprises a tungsten material. 13. The polishing method according to claim 11 , wherein said surface to be polished contains at least one selected from the group consisting of silicon oxide and silicon nitride.

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