JP7285691B2 - Magnetic sensor device - Google Patents

Description

The present invention relates to a magnetic sensor device that includes a magnetic scale and a magnetic sensor that moves relative to the magnetic scale.

2. Description of the Related Art Conventionally, a rotary encoder including an annular magnetic scale and a detector for detecting rotational movement of the magnetic scale is known (see, for example, Patent Document 1). In the rotary encoder described in Patent Document 1, the magnetic scale has a first annular track arranged radially outside the magnetic scale and a second annular track adjacent to the first track radially inside the magnetic scale. and In the first track and the second track, N poles and S poles are alternately arranged with the same width along the circumferential direction of the magnetic scale. In addition, the positions of the N pole and the S pole of the first track and the second track are shifted by one magnetic pole in the circumferential direction. Therefore, a rotating magnetic field is generated at a predetermined position of the magnetic scale.

Further, in the rotary encoder described in Patent Document 1, the detector includes a magnetic sensor substrate on which magnetoresistive elements are mounted. The magnetoresistive element includes an A-phase magnetoresistive pattern and a B-phase magnetoresistive pattern having a phase difference of 90° from each other. The A-phase magnetoresistive pattern includes a +a-phase magnetoresistive pattern and a −a-phase magnetoresistive pattern for detecting movement of the magnetic scale with a phase difference of 180°. The B-phase magnetoresistive pattern includes a +b-phase magnetoresistive pattern and a −b-phase magnetoresistive pattern for detecting movement of the magnetic scale with a phase difference of 180°. The +a-phase magnetoresistive pattern is composed of a plurality of linear conductors whose longitudinal direction is the radial direction of the magnetic scale. Similarly, each of the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern is composed of a plurality of linear conductors whose longitudinal direction is the radial direction of the magnetic scale. .

Japanese Unexamined Patent Application Publication No. 2012-118000

In the rotary encoder described in Patent Document 1, when an external magnetic field is applied to the rotary encoder and the external magnetic field (external magnetic field) is combined with the magnetic field generated by the magnetic scale, the detection accuracy of the rotary encoder decreases. It was clarified by the examination of Specifically, in the rotary encoder described in Patent Document 1, each of the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern is a magnetic scale. When an external magnetic field is applied to the rotary encoder, the effect of the external magnetic field acts on each of the multiple conductors in the same direction, causing an external magnetic field The inventors of the present invention have found that the detection accuracy of the rotary encoder is lowered because the influence of is amplified.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a magnetic sensor device that includes a magnetic scale and a magnetic sensor, and is capable of suppressing deterioration in detection accuracy even when a magnetic field is applied from the outside.

In order to solve the above problems, the magnetic sensor device of the present invention includes a magnetic scale formed in an annular shape, a circular shape, or a linear shape, and a magnetic sensor arranged opposite to the magnetic scale. Alternatively, if the magnetic scale is formed in a circular shape, the magnetic sensor moves relative to the magnetic scale in the circumferential direction of the magnetic scale. , moves relative to the magnetic scale in the longitudinal direction of the magnetic scale, and the magnetic scale has a plurality of tracks in which N poles and S poles are alternately arranged with the same width in the direction of relative movement of the magnetic sensor with respect to the magnetic scale. A plurality of tracks are arranged adjacent to each other in an orthogonal direction orthogonal to the direction of relative movement, and the positions of the N and S poles of tracks adjacent to each other in the direction of relative movement are shifted by one magnetic pole in the direction of relative movement. , a rotating magnetic field is generated in which the direction of the magnetic vector in the in-plane direction parallel to the facing surface of the magnetic scale facing the magnetic sensor changes in the relative movement direction, and the magnetic sensors are positioned at 90° to each other. A phase magnetoresistive pattern and a B phase magnetoresistive pattern having a phase difference, the A phase magnetoresistive pattern having a phase difference of 180° and a +a phase for detecting relative movement of the magnetic sensor with respect to the magnetic scale. It comprises a magnetoresistive pattern and a -a phase magnetoresistive pattern, and the B phase magnetoresistive pattern is a +b phase magnetoresistive pattern and a -b phase magnetoresistive pattern for detecting the relative movement of the magnetic sensor with respect to the magnetic scale with a phase difference of 180 °. The +a phase magnetoresistive pattern includes a power source side +a phase magnetoresistive pattern arranged closer to the power source than the midpoint position of the +a phase magnetoresistive pattern, and the +a phase magnetoresistive pattern. The +a phase magnetoresistive pattern on the ground side is arranged closer to the ground than the midpoint position, and the -a phase magnetoresistive pattern is closer to the power supply side than the midpoint position of the -a phase magnetoresistive pattern. It is composed of a power supply side -a phase magnetoresistive pattern and a ground side -a phase magnetoresistive pattern disposed closer to the ground than the midpoint position of the -a phase magnetoresistive pattern, and a +b phase magnetoresistive pattern. The magnetoresistive patterns are arranged on the power supply side +b phase magnetoresistive pattern arranged closer to the power supply side than the midpoint position of the +b phase magnetoresistive pattern, and on the ground side than the midpoint position of the +b phase magnetoresistive pattern. The -b phase magnetoresistive pattern is arranged on the power supply side with respect to the midpoint position of the -b phase magnetoresistive pattern. and a ground side -b phase magnetoresistive pattern arranged closer to the ground side than the midpoint position of the -b phase magnetoresistive pattern. Magnetic resistance pattern, power supply side - a phase magnetic resistance pattern, ground side - a phase magnetic resistance pattern, power supply side + b phase magnetic resistance pattern, ground side + b phase magnetic resistance pattern, power supply side - b phase magnetic resistance pattern The pattern and the magnetoresistive pattern of the ground side -b phase are arranged in a position where a rotating magnetic field is generated in the orthogonal direction. The ground side +a phase magnetoresistive pattern is composed of a first magnetoresistive pattern, and the ground side +a phase magnetoresistive pattern is composed of a plurality of block-shaped second magnetoresistive patterns divided into blocks in the direction of relative movement. The resistance pattern is composed of a plurality of block-shaped third magnetoresistive patterns divided into blocks in the relative movement direction, and the ground side-a phase magnetoresistive pattern is composed of a plurality of block-shaped third magnetoresistive patterns divided into blocks in the relative movement direction. The +b-phase magnetoresistive pattern on the power supply side is composed of a plurality of block-shaped fifth magnetoresistive patterns divided in the direction of relative movement, and the +b-phase magnetoresistive pattern on the ground side is composed of a plurality of block-shaped fifth magnetoresistive patterns. The resistance pattern is composed of a plurality of block-shaped sixth magnetoresistive patterns divided into blocks in the relative movement direction, and the power supply side-b phase magnetoresistive pattern is composed of a plurality of block-shaped sixth magnetoresistive patterns divided into blocks in the relative movement direction. The ground side-b phase magnetoresistive pattern is composed of a plurality of block-shaped eighth magnetoresistive patterns divided in the direction of relative movement, and the first magnetoresistive pattern pattern, second magnetoresistive pattern, third magnetoresistive pattern, fourth magnetoresistive pattern, fifth magnetoresistive pattern, sixth magnetoresistive pattern, seventh magnetoresistive pattern and eighth magnetoresistive pattern Each of the is formed by folding back a linear conductor whose longitudinal direction is a predetermined direction, and includes a plurality of first magnetoresistive patterns, a plurality of second magnetoresistive patterns, and a plurality of third magnetoresistive patterns. In each of the pattern, the plurality of fourth magnetoresistive patterns, the plurality of fifth magnetoresistive patterns, the plurality of sixth magnetoresistive patterns, the plurality of seventh magnetoresistive patterns, and the plurality of eighth magnetoresistive patterns, The magnetoresistive pattern arranged closest to one end in the direction of relative movement is defined as the one-end magnetoresistive pattern, the magnetoresistive pattern arranged closest to the other end in the direction of relative movement is defined as the other-end magnetoresistive pattern, and the magnetic scale is formed in an annular or circular shape, the central angle formed by one N pole and one S pole adjacent in the circumferential direction of the magnetic scale with respect to the center of the magnetic scale is defined as λ, and the magnetic When the scale is linearly formed, if the sum of the width of one N pole and the width of one S pole in the direction of relative movement is λ, then the plurality of first magnetoresistive patterns, the plurality of a plurality of third magnetoresistive patterns, a plurality of fourth magnetoresistive patterns, a plurality of fifth magnetoresistive patterns, a plurality of sixth magnetoresistive patterns, a plurality of seventh magnetic Each of the resistance pattern and the plurality of eighth magnetoresistive patterns is arranged in a range of λ / 2 in the relative movement direction , and n is an integer of 2 or more, the magnetoresistive pattern on the power supply side + a phase is arranged in the relative movement direction is composed of n first magnetoresistive patterns arranged at a pitch of λ/2n in the direction of relative movement, and the magnetoresistive pattern of the ground side +a phase is composed of n second magnetoresistive patterns arranged at a pitch of λ/2n in the direction of relative movement. The power supply side-a phase magnetoresistive pattern is composed of n third magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction, and the ground side-a phase magnetic The resistance patterns are composed of n fourth magnetoresistive patterns arranged at a pitch of λ/2n in the direction of relative movement, and the +b-phase magnetoresistive patterns on the power supply side are arranged at a pitch of λ/2n in the direction of relative movement. The ground side +b phase magnetoresistive pattern is composed of n sixth magnetoresistive patterns arranged at a pitch of λ/2n in the direction of relative movement, and the power supply The magnetoresistive pattern of the side-b phase is composed of n seventh magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction, and the magnetoresistive pattern of the ground side-b phase is composed of n eighth magnetoresistive patterns arranged at a λ/2n pitch, the longitudinal direction of the conductor of each of the n first magnetoresistive patterns, and the direction of the conductor of each of the n second magnetoresistive patterns a longitudinal direction of the conductors, a longitudinal direction of each of the n third magnetoresistive patterns, a longitudinal direction of each of the n fourth magnetoresistive patterns, each of the n fifth magnetoresistive patterns. a longitudinal direction of each conductor of n sixth magnetoresistive patterns; a longitudinal direction of each conductor of n seventh magnetoresistive patterns; and a longitudinal direction of each conductor of n eighth magnetoresistive patterns. The longitudinal direction of each conductor of the pattern is characterized in that it changes by 180/n° in a constant direction from the magnetoresistive pattern on one end to the magnetoresistive pattern on the other end.

In the magnetic sensor device of the present invention, the longitudinal direction of each of the conductors of the n first magnetoresistive patterns constituting the +a-phase magnetoresistive pattern on the power supply side and arranged in the range of λ/2 in the relative movement direction is , changes in a constant direction by 180/n° from the one end magnetoresistive pattern toward the other end magnetoresistive pattern. Therefore, in the present invention, when an external magnetic field is applied to the magnetic sensor device, the influence of the external magnetic field acts on each of the n first magnetoresistive patterns in different directions. Therefore, in the present invention, when an external magnetic field is applied to the magnetic sensor device, it is possible to cancel out the effects of the external magnetic field acting on each of the n first magnetoresistive patterns. That is, in the present invention, it becomes possible to cancel the influence of the external magnetic field on the +a-phase magnetoresistive pattern on the power supply side, and as a result, the influence of the external magnetic field acting on the +a-phase magnetoresistive pattern on the power supply side can be reduced. becomes possible.

Similarly, in the present invention, the longitudinal direction of the conductors of each of the n second magnetoresistive patterns, which are arranged in the range of λ/2 in the direction of relative movement, a longitudinal direction of the conductors of each of the n fourth magnetoresistive patterns; a longitudinal direction of each of the n fifth magnetoresistive patterns; each of the n sixth magnetoresistive patterns. , the longitudinal direction of each conductor of n seventh magnetoresistive patterns, and the longitudinal direction of each conductor of n eighth magnetoresistive patterns, from one end side magnetoresistive pattern Since the magnetoresistive pattern changes by 180/n° in a constant direction toward the end side magnetoresistive pattern, when an external magnetic field is applied to the magnetic sensor device, the magnetoresistive pattern of +a phase on the ground side and the magnetoresistive pattern of -a phase on the power supply side are changed. pattern, ground side -a phase magnetoresistive pattern, power supply side +b phase magnetoresistive pattern, ground side +b phase magnetoresistive pattern, power supply side -b phase magnetoresistive pattern, and ground side -b phase magnetoresistive pattern It is possible to cancel the influence of the external magnetic field on each, and as a result, the ground side +a phase magnetoresistance pattern, the power side -a phase magnetoresistance pattern, the ground side -a phase magnetoresistance pattern, the power side +b It is possible to reduce the influence of the external magnetic field acting on each of the phase magnetoresistive pattern, the ground side +b phase magnetoresistive pattern, the power supply side -b phase magnetoresistive pattern, and the ground side -b phase magnetoresistive pattern. Become.

In this way, in the present invention, when an external magnetic field is applied to the magnetic sensor device, the power supply side +a phase magnetoresistance pattern, the ground side +a phase magnetoresistance pattern, the power supply side -a phase magnetoresistance pattern, the ground side - of the external magnetic field acting on the a-phase magnetoresistive pattern, the power supply +b-phase magnetoresistive pattern, the grounding +b-phase magnetoresistive pattern, the power supply-b-phase magnetoresistive pattern, and the ground-b-phase magnetoresistive pattern Since the influence can be reduced, even if a magnetic field is applied to the magnetic sensor device from the outside, it is possible to suppress deterioration in the detection accuracy of the magnetic sensor device.

In addition, in the present invention, the power supply side +a phase magnetoresistive pattern, the ground side +a phase magnetoresistive pattern, the power supply side −a phase magnetoresistive pattern, the ground side −a phase magnetoresistive pattern, the power source side +b phase magnetic The resistance pattern, the +b-phase magnetoresistive pattern on the ground side, the -b-phase magnetoresistive pattern on the power supply side, and the -b-phase magnetoresistive pattern on the ground side are arranged at positions where a rotating magnetic field is generated in the orthogonal direction. longitudinal direction of each conductor of n first magnetoresistive patterns longitudinal direction of each conductor of n second magnetoresistive patterns longitudinal direction of each conductor of n third magnetoresistive patterns , the longitudinal direction of each conductor of the n fourth magnetoresistive patterns, the longitudinal direction of each conductor of the n fifth magnetoresistive patterns, the longitudinal direction of each conductor of the n sixth magnetoresistive patterns. the direction, the longitudinal direction of each conductor of the n seventh magnetoresistive patterns, and the longitudinal direction of each conductor of the n eighth magnetoresistive patterns, from the one end side magnetoresistive pattern to the other end side magnetoresistive pattern It is possible to suppress the decrease in the output of the magnetic sensor even if the angle changes by 180/n° in a constant direction.
In particular, in the present invention, the longitudinal direction of each conductor of the n first magnetoresistive patterns is arranged at a position where a rotating magnetic field is generated in the orthogonal direction and is arranged in the range of λ / 2 in the direction of relative movement. , the longitudinal direction of each conductor of the n second magnetoresistive patterns, the longitudinal direction of each conductor of the n third magnetoresistive patterns, the longitudinal direction of each conductor of the n fourth magnetoresistive patterns. the longitudinal direction of each conductor of the n fifth magnetoresistive patterns; the longitudinal direction of each conductor of the n sixth magnetoresistive patterns; the longitudinal direction of each conductor of the n seventh magnetoresistive patterns; Since the longitudinal direction and the longitudinal direction of each conductor of the n eighth magnetoresistive patterns change by 180/n° from the one end magnetoresistive pattern toward the other end magnetoresistive pattern, the magnetic sensor It is possible to prevent the output from decreasing.

In the present invention, the +a-phase magnetoresistive pattern on the power supply side is composed of four first magnetoresistive patterns arranged at a pitch of λ/8 in the direction of relative movement, and the +a-phase magnetoresistive pattern on the ground side is composed of relative The power supply side-a phase magnetoresistive pattern is composed of four second magnetoresistive patterns arranged at a pitch of λ/8 in the movement direction, and four magnetoresistive patterns arranged at a pitch of λ/8 in the relative movement direction. The ground side −a phase magnetoresistive pattern is composed of a third magnetoresistive pattern, and the power source side +b phase magnetoresistive pattern is composed of four fourth magnetoresistive patterns arranged at a pitch of λ/8 in the relative movement direction. is composed of four fifth magnetoresistive patterns arranged at a pitch of λ/8 in the direction of relative movement, and the magnetoresistive pattern of the ground side +b phase is arranged at a pitch of λ/8 in the direction of relative movement. It is composed of four sixth magnetoresistive patterns arranged, and the power supply side-b phase magnetoresistive pattern is composed of four seventh magnetoresistive patterns arranged at a pitch of λ/8 in the direction of relative movement. and the ground side-b phase magnetoresistive pattern is composed of four eighth magnetoresistive patterns arranged at a pitch of λ/8 in the direction of relative movement, and each of the four first magnetoresistive patterns a longitudinal direction of the conductors, a longitudinal direction of the conductors of each of the four second magnetoresistive patterns, a longitudinal direction of the conductors of each of the four third magnetoresistive patterns, each of the four fourth magnetoresistive patterns; , the longitudinal direction of each of the four fifth magnetoresistive patterns, the longitudinal direction of each of the four sixth magnetoresistive patterns, the longitudinal direction of each of the four seventh magnetoresistive patterns The longitudinal direction of each conductor and the longitudinal direction of each conductor of the four eighth magnetoresistive patterns change by 45° from the one end side magnetoresistive pattern toward the other end side magnetoresistive pattern. preferable.

According to the studies of the inventors of the present application, if configured in this way, the power supply side +a phase magnetoresistive pattern, the ground side +a phase magnetoresistive pattern, the power supply side -a phase magnetoresistive pattern, the ground side -a phase magnetic The effect of the external magnetic field is more effective in each of the resistance pattern, the +b phase magnetoresistive pattern on the power supply side, the +b phase magnetoresistive pattern on the ground side, the -b phase magnetoresistive pattern on the power supply side, and the -b phase magnetoresistive pattern on the ground side. As a result, the power supply side +a phase magnetoresistance pattern, the ground side +a phase magnetoresistance pattern, the power supply side -a phase magnetoresistance pattern, the ground side -a phase magnetoresistance pattern , +b-phase magnetoresistive pattern on the power supply side, +b-phase magnetoresistive pattern on the ground side, -b-phase magnetoresistive pattern on the power supply side, and -b-phase magnetoresistive pattern on the ground side. can be effectively reduced.

In the present invention, for example, the first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, the fourth magnetoresistive pattern, the fifth magnetoresistive pattern, the sixth magnetoresistive pattern, the seventh and the eighth magnetoresistive pattern are each formed to fit within a circular area having a diameter defined by λ/2n.

In the present invention, the plurality of first magnetoresistive patterns are connected in series, the plurality of second magnetoresistive patterns are connected in series, the plurality of third magnetoresistive patterns are connected in series, and the plurality of The fourth magnetoresistive patterns are connected in series, the plurality of fifth magnetoresistive patterns are connected in series, the plurality of sixth magnetoresistive patterns are connected in series, and the plurality of seventh magnetoresistive patterns are connected in series. Preferably, the resistance patterns are connected in series, and the plurality of eighth magnetoresistive patterns are connected in series.

With this configuration, the power supply side +a phase magnetoresistive pattern, the ground side +a phase magnetoresistive pattern, the power supply side −a phase magnetoresistive pattern, the ground side −a phase magnetoresistive pattern, and the power source side +b phase magnetoresistive pattern. By increasing the resistance values of the resistance pattern, the ground side +b phase magnetoresistive pattern, the power supply side -b phase magnetoresistive pattern, and the ground side -b phase magnetoresistive pattern, each of these magnetoresistive patterns It becomes possible to reduce the current value in Therefore, it becomes possible to reduce the power consumption of the magnetic sensor.

In the present invention, the magnetic sensor has two magnetoresistive patterns selected from a +a phase magnetoresistive pattern, a −a phase magnetoresistive pattern, a +b phase magnetoresistive pattern, and a −b phase magnetoresistive pattern. Formed on the first magnetoresistive pattern layer of the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern and a second magnetoresistive pattern layer on which the remaining two magnetoresistive patterns are formed, except for the two magnetoresistive patterns formed by the first magnetoresistive pattern layer and the second magnetoresistive pattern layer. It is preferable that the magnetoresistive pattern formed on the pattern layer and the magnetoresistive pattern formed on the second magnetoresistive pattern layer are laminated so as to overlap each other. With this configuration, the cost of the chip on which the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern are formed, and the mounting of the chip It becomes possible to reduce the cost of the package in a well-balanced manner.

In the present invention, the magnetic sensor includes a common magnetoresistive pattern layer in which a +a phase magnetoresistive pattern, a −a phase magnetoresistive pattern, a +b phase magnetoresistive pattern, and a −b phase magnetoresistive pattern are formed. may be provided. In this case, it is possible to reduce the cost of the chip on which the +a-phase magnetoresistive pattern, the −a-phase magnetoresistive pattern, the +b-phase magnetoresistive pattern, and the −b-phase magnetoresistive pattern are formed.

In the present invention, the magnetic sensor includes a first magnetoresistive pattern layer on which a +a phase magnetoresistive pattern is formed, a second magnetoresistive pattern layer on which a −a phase magnetoresistive pattern is formed, and a +b phase magnetoresistive pattern. A third magnetoresistive pattern layer on which a pattern is formed and a fourth magnetoresistive pattern layer on which a -b phase magnetoresistive pattern is formed, wherein the first magnetoresistive pattern layer, the second magnetoresistive pattern layer and the third magnetoresistive pattern layer are provided. The magnetoresistive pattern layer and the fourth magnetoresistive pattern layer are laminated such that the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern overlap. It's okay to be there.

In this case, it is possible to miniaturize the chip on which the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern are formed. It becomes possible to reduce the cost of the package in which the chip is mounted. In this case, since the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern overlap each other, the external magnetic field applied to the magnetic sensor device Even if the strength and orientation of the magnetic sensor fluctuate within the installation range of the magnetic sensor, it is possible to suppress deterioration in the detection accuracy of the magnetic sensor device.

In the present invention, for example, the magnetic scale is formed in an annular or circular shape, and includes a plurality of first magnetoresistive patterns, a plurality of second magnetoresistive patterns, a plurality of third magnetoresistive patterns, and a plurality of fourth magnetoresistive patterns. , the plurality of fifth magnetoresistive patterns, the plurality of sixth magnetoresistive patterns, the plurality of seventh magnetoresistive patterns, and the plurality of eighth magnetoresistive patterns are each arranged in an arc It is That is, the magnetic sensor device is, for example, a rotary encoder. In this case, even if a magnetic field is applied to the magnetic sensor device, which is a rotary encoder, from the outside, it is possible to suppress deterioration in detection accuracy of the magnetic sensor device.

Further, in the present invention, for example, the magnetic scale is formed linearly, and includes a plurality of first magnetoresistive patterns, a plurality of second magnetoresistive patterns, a plurality of third magnetoresistive patterns, and a plurality of fourth magnetoresistive patterns. Each of the magnetoresistive patterns, the plurality of fifth magnetoresistive patterns, the plurality of sixth magnetoresistive patterns, the plurality of seventh magnetoresistive patterns, and the plurality of eighth magnetoresistive patterns are linearly arranged. ing. That is, the magnetic sensor device is, for example, a linear encoder. In this case, even if a magnetic field is applied to the magnetic sensor device, which is a linear encoder, from the outside, it is possible to suppress deterioration in the detection accuracy of the magnetic sensor device.

As described above, in the present invention, in a magnetic sensor device including a magnetic scale and a magnetic sensor, even if a magnetic field is applied to the magnetic sensor device from the outside, it is possible to suppress deterioration in the detection accuracy of the magnetic sensor device. .

1 is a schematic diagram for explaining the configuration of a magnetic sensor device according to an embodiment of the present invention; FIG. 2 is an enlarged view for explaining the configuration of an E section in FIG. 1; FIG. 2 is an enlarged view for explaining the configuration of an E section in FIG. 1; FIG. 2 is a side view of the magnetic sensor shown in FIG. 1; FIG. 5 is a circuit diagram of the magnetic sensor shown in FIG. 4; FIG. 5 is a diagram for explaining an output signal of the magnetic sensor shown in FIG. 4; FIG. 5 is a diagram for explaining the configuration of the MR chip shown in FIG. 4; FIG. 8 is a diagram for explaining the configuration of a first magnetoresistive pattern layer shown in FIG. 7; FIG. 8 is a diagram for explaining the configuration of a second magnetoresistive pattern layer shown in FIG. 7; FIG. (A) is a graph showing results obtained from a simulation of applying an external magnetic field to the magnetic sensor device shown in FIG. It is a graph which shows the result obtained. FIG. 5 is a diagram for explaining the configuration of an MR chip according to another embodiment of the invention; FIG. 5 is a diagram for explaining the configuration of an MR chip according to another embodiment of the invention; 7 is a graph showing results obtained by simulation of applying an external magnetic field to a magnetic sensor device according to another embodiment of the present invention; FIG. 5 is a schematic diagram for explaining the configuration of a magnetic sensor according to another embodiment of the invention; FIG. 4 is a schematic diagram for explaining the configuration of a magnetic sensor device according to another embodiment of the present invention;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Schematic configuration of magnetic sensor device)
FIG. 1 is a schematic diagram for explaining the configuration of a magnetic sensor device 1 according to an embodiment of the invention.

The magnetic sensor device 1 of this embodiment is, for example, a rotary encoder attached to a motor having a rotor and a stator. The magnetic sensor device 1 includes a magnetic scale 2 and a magnetic sensor 3 arranged to face the magnetic scale 2 . The magnetic sensor 3 is fixed to a stationary member of the motor, such as a motor case. A magnetic scale 2 is fixed to the rotor. When the rotor rotates, the magnetic scale 2 rotates with respect to the magnetic sensor 3 . That is, when the rotor rotates, the magnetic sensor 3 moves relative to the magnetic scale 2 . Specifically, the magnetic sensor 3 moves relative to the magnetic scale 2 in the circumferential direction of the magnetic scale 2 when the rotor rotates. That is, the magnetic sensor 3 rotates relative to the magnetic scale 2 when the rotor rotates.

(Configuration of magnetic scale)
2 and 3 are enlarged views for explaining the configuration of the E section in FIG.

The magnetic scale 2 is formed in an annular or circular shape. The magnetic scale 2 has a plurality of tracks 2a and 2b in which N poles and S poles are alternately arranged in the circumferential direction of the magnetic scale 2 with the same width. The magnetic scale 2 of this embodiment has two tracks 2a and 2b. The magnetic scale 2 also has a permanent magnet formed in an annular or circular shape, and the tracks 2a and 2b are formed on the surface of the permanent magnet.

Tracks 2a and 2b are formed in an annular shape. Specifically, the tracks 2a and 2b are formed in an annular shape with the center of the magnetic scale 2 as the center of curvature. The width of the track 2a in the radial direction of the magnetic scale 2 perpendicular to the circumferential direction of the magnetic scale 2 and the width of the track 2b in the radial direction of the magnetic scale 2 are equal. The two tracks 2a and 2b are arranged concentrically and adjacent to each other in the radial direction of the magnetic scale 2. As shown in FIG. Specifically, the track 2a is arranged inside the magnetic scale 2 in the radial direction, and the track 2b is arranged outside the magnetic scale 2 in the radial direction.

The outer peripheral surface of track 2a and the inner peripheral surface of track 2b are in contact with each other. In the following description, the circumferential direction of the magnetic scale 2 is defined as "circumferential direction", and the radial direction of the magnetic scale 2 is defined as "radial direction". The circumferential direction in this embodiment is the direction of relative movement of the magnetic sensor 3 with respect to the magnetic scale 2 , and the radial direction is the orthogonal direction orthogonal to the direction of relative movement of the magnetic sensor 3 with respect to the magnetic scale 2 .

In the tracks 2a and 2b, the positions of the N pole and the S pole are shifted by one magnetic pole in the circumferential direction. That is, on the magnetic scale 2, N poles and S poles are arranged in a checkered pattern. Therefore, in this embodiment, at predetermined positions of the tracks 2a and 2b in the radial direction, the direction of the magnetic vector in the in-plane direction parallel to the facing surface 2c of the magnetic scale 2 facing the magnetic sensor 3 (Figs. Rotating magnetic fields H1 and H2 whose directions of arrows) change in the circumferential direction are generated.

Specifically, in the track 2a, the rotating magnetic field H1 is generated at a position slightly inside the boundary between the tracks 2a and 2b in the radial direction. A rotating magnetic field H2 is generated at a position outside the direction. As shown in FIGS. 2 and 3, in the rotating magnetic fields H1 and H2, the direction of the magnetic vector rotates 180° with the circumferential width of one N pole (that is, the circumferential width of one S pole). do.

(Configuration of magnetic sensor)
4 is a side view of the magnetic sensor 3 shown in FIG. 1. FIG. FIG. 5 is a circuit diagram of the magnetic sensor 3 shown in FIG. FIG. 6 is a diagram for explaining the output signal of the magnetic sensor 3 shown in FIG. FIG. 7 is a diagram for explaining the configuration of MR chip 5 shown in FIG. FIG. 8 is a diagram for explaining the configuration of the first magnetoresistive pattern layer 37 shown in FIG. FIG. 9 is a diagram for explaining the configuration of the second magnetoresistive pattern layer 38 shown in FIG.

As shown in FIG. 4, the magnetic sensor 3 includes a chip-type magnetoresistive element 5 (hereinafter referred to as "MR chip 5"), a sensor substrate 6 on which the MR chip 5 is mounted, and a sensor substrate 6 mounted on the sensor substrate 6. and a resin sealing member 7 for covering the MR chip 5 formed thereon. The magnetic sensor 3 is arranged such that the detection surface 5a of the MR chip 5 and the facing surface 2c of the magnetic scale 2 face each other. The sensor substrate 6 is, for example, a rigid substrate made of silicon, ceramics, or the like. The MR chip 5 includes an A-phase (SIN phase) magnetoresistive pattern 8 and a B-phase (COS phase) magnetoresistive pattern 9 having a phase difference of 90° from each other (see FIG. 5).

The A-phase magnetoresistive pattern 8 includes a +a-phase magnetoresistive pattern 11 and a −a-phase magnetoresistive pattern 12 for detecting the relative movement of the magnetic sensor 3 with respect to the magnetic scale 2 with a phase difference of 180°. . The +a-phase magnetoresistive pattern 11 and the −a-phase magnetoresistive pattern 12 form a bridge circuit. The B-phase magnetoresistive pattern 9 includes a +b-phase magnetoresistive pattern 13 and a −b-phase magnetoresistive pattern 14 for detecting relative movement of the magnetic sensor 3 with respect to the magnetic scale 2 with a phase difference of 180°. . The +b-phase magnetoresistive pattern 13 and the −b-phase magnetoresistive pattern 14 form a bridge circuit.

One end of the +a phase magnetoresistive pattern 11 and one end of the −a phase magnetoresistive pattern 12 are connected to a power supply terminal 17 (see FIG. 7), and the other end of the +a phase magnetoresistive pattern 11 and the −a phase The other end of the magnetoresistive pattern 12 is connected to a ground terminal 18 (see FIG. 7). A midpoint position 11c of the +a-phase magnetoresistive pattern 11 is connected to a terminal 19 (see FIG. 7). A midpoint position 12c of the -a phase magnetoresistive pattern 12 is connected to a terminal 20 (see FIG. 7).

Similarly, one end of the +b phase magnetoresistive pattern 13 and one end of the −b phase magnetoresistive pattern 14 are connected to a power supply terminal 17, and the other end of the +b phase magnetoresistive pattern 13 and the −b phase magnetoresistive pattern are connected to the power supply terminal 17. The other end of the resistor pattern 14 is connected to the ground terminal 18 . The midpoint position 13c of the +b-phase magnetoresistive pattern 13 is connected to the terminal 21 (see FIG. 7). The midpoint position 14c of the -b phase magnetoresistive pattern 14 is connected to the terminal 22 (see FIG. 7).

Terminal 19 outputs an analog SIN+ signal that fluctuates, for example, as shown in FIG. 6, and terminal 20 outputs an analog SIN- signal that fluctuates, for example, as shown in FIG. The SIN+ signal and SIN− signal are input to differential circuit 23 . The differential circuit 23 outputs an analog SIN signal (sine wave signal, A-phase signal) that fluctuates as shown in FIG.

Terminal 21 outputs an analog COS+ signal that fluctuates, for example, as shown in FIG. 6, and terminal 22 outputs an analog COS- signal that fluctuates, for example, as shown in FIG. The COS+ and COS- signals are input to differential circuit 24 . The differential circuit 24 outputs an analog COS signal (cosine wave signal, B-phase signal) that fluctuates as shown in FIG. In this embodiment, the rotational speed and the amount of rotation of the magnetic scale 2 are detected based on the SIN signal output from the differential circuit 23 and the COS signal output from the differential circuit 24 .

The +a-phase magnetoresistive pattern 11 is composed of a power supply side +a-phase magnetoresistive pattern 27 arranged closer to the power source side than the midpoint position 11c of the +a-phase magnetoresistive pattern 11, and the midpoint of the +a-phase magnetoresistive pattern 11. It is composed of a ground side +a phase magnetic resistance pattern 28 arranged on the ground side of the position 11c. The −a phase magnetoresistive pattern 12 includes a power supply side −a phase magnetoresistive pattern 29 arranged closer to the power source side than the midpoint position 12c of the −a phase magnetoresistive pattern 12, and a −a phase magnetoresistive pattern. 12, and a ground side-a phase magnetoresistive pattern 30 arranged closer to the ground side than the midpoint position 12c.

The +b phase magnetoresistive pattern 13 is composed of the power source side +b phase magnetoresistive pattern 31 arranged closer to the power source side than the midpoint position 13c of the +b phase magnetoresistive pattern 13 and the midpoint of the +b phase magnetoresistive pattern 13 . and a ground side +b-phase magnetic resistance pattern 32 arranged closer to the ground side than the position 13c. The −b phase magnetoresistive pattern 14 includes a power supply side −b phase magnetoresistive pattern 33 arranged closer to the power source side than the midpoint position 14c of the −b phase magnetoresistive pattern 14, and a −b phase magnetoresistive pattern. 14, and a ground-side-b phase magnetoresistive pattern 34 arranged closer to the ground than the midpoint position 14c of .

The +a-phase magnetoresistive pattern 27 on the power supply side is composed of a plurality of block-shaped first magnetoresistive patterns 27a to 27d (hereinafter referred to as “magnetoresistive patterns 27a to 27d”) divided into blocks in the circumferential direction. ing. Similarly, the ground side +a phase magnetoresistive pattern 28 is a plurality of block-shaped second magnetoresistive patterns 28a to 28d (hereinafter referred to as "magnetoresistive patterns 28a to 28d") divided into blocks in the circumferential direction. The power supply side -a phase magnetoresistive pattern 29 includes a plurality of block-shaped third magnetoresistive patterns 29a to 29d (hereinafter referred to as "magnetoresistive patterns 29a to 29d") divided into blocks in the circumferential direction. ), and the ground-side -a-phase magnetoresistive pattern 30 is composed of a plurality of block-shaped fourth magnetoresistive patterns 30a to 30d (hereinafter, “magnetoresistive patterns 30a to 30d”) divided into blocks in the circumferential direction. ).

The +b-phase magnetoresistive pattern 31 on the power supply side is formed by a plurality of block-shaped fifth magnetoresistive patterns 31a to 31d (hereinafter referred to as “magnetoresistive patterns 31a to 31d”) divided into blocks in the circumferential direction. The ground-side +b-phase magnetoresistive pattern 32 includes a plurality of block-shaped sixth magnetoresistive patterns 32a to 32d (hereinafter referred to as "magnetoresistive patterns 32a to 32d") divided into blocks in the circumferential direction. The power supply side -b phase magnetoresistive pattern 33 includes a plurality of block-shaped seventh magnetoresistive patterns 33a to 33d (hereinafter referred to as "magnetoresistive patterns 33a to 33d") divided into blocks in the circumferential direction. ), and the ground side-b phase magnetoresistive pattern 34 is composed of a plurality of block-shaped eighth magnetoresistive patterns 34a to 34d (hereinafter referred to as “magnetoresistive patterns 34a to 34d”) divided into blocks in the circumferential direction. ).

In this embodiment, the +a-phase magnetoresistive pattern 27 on the power supply side is composed of four magnetoresistive patterns 27a to 27d. The +a-phase magnetoresistive pattern 28 on the ground side is composed of four magnetoresistive patterns 28a to 28d, and the −a-phase magnetoresistive pattern 29 on the power supply side is composed of four magnetoresistive patterns 29a to 29d. , the ground side -a phase magnetoresistive pattern 30 is composed of four magnetoresistive patterns 30a to 30d. Similarly, the +b-phase magnetoresistive pattern 31 on the power supply side is composed of four magnetoresistive patterns 31a to 31d, and the +b-phase magnetoresistive pattern 32 on the ground side is composed of four magnetoresistive patterns 32a to 32d. , the power supply side -b phase magnetoresistive pattern 33 is composed of four magnetoresistive patterns 33a to 33d, and the ground side -b phase magnetoresistive pattern 34 is composed of four magnetoresistive patterns 34a to 34d. ing.

The four magnetoresistive patterns 27a-27d are connected in series. Specifically, the four magnetoresistive patterns 27a to 27d are connected in series in this order from the power supply side toward the midpoint position 11c. Similarly, the four magnetoresistive patterns 28a-28d are connected in series, the four magnetoresistive patterns 29a-29d are connected in series, and the four magnetoresistive patterns 30a-30d are connected in series. , the four magnetoresistive patterns 31a to 31d are connected in series, the four magnetoresistive patterns 32a to 32d are connected in series, the four magnetoresistive patterns 33a to 33d are connected in series, and 4 The magnetoresistive patterns 34a-34d are connected in series.

Specifically, the four magnetoresistive patterns 28a to 28d are connected in series in this order from the midpoint position 11c toward the ground side. The four magnetoresistive patterns 29a to 29d are connected in series from the power supply side toward the midpoint position 12c in this order, and the four magnetoresistive patterns 30a to 30d are connected from the midpoint position 12c to the ground side. are connected in series in this order. The four magnetoresistive patterns 31a-31d are connected in series in this order from the power supply side toward the midpoint position 13c, and the four magnetoresistive patterns 32a-32d are connected from the midpoint position 13c toward the ground side. They are connected in series in this order. The four magnetoresistive patterns 33a-33d are connected in series in this order from the power supply side toward the midpoint position 14c, and the four magnetoresistive patterns 34a-34d are connected from the midpoint position 14c toward the ground side. They are connected in series in this order.

The MR chip 5 includes a first magnetoresistive pattern layer 37 in which magnetoresistive patterns 27a-27d, 28a-28d, 33a-33d, and 34a-34d are formed, and magnetoresistive patterns 29a-29d, 30a-30d, and 31a-31d. , 32a-32d are formed thereon.

That is, the magnetic sensor 3 has two magnetoresistive patterns of the +a-phase magnetoresistive pattern 11, the −a-phase magnetoresistive pattern 12, the +b-phase magnetoresistive pattern 13, and the −b-phase magnetoresistive pattern 14. A first magnetoresistive pattern layer 37 in which a certain +a phase magnetoresistive pattern 11 and a −b phase magnetoresistive pattern 14 are formed, a +a phase magnetoresistive pattern 11, a −a phase magnetoresistive pattern 12, and a +b phase magnetoresistive pattern Of the magnetoresistive patterns 13 and the −b phase magnetoresistive patterns 14, the two +a-phase magnetoresistive patterns 11 and the −b-phase magnetoresistive patterns 14 formed on the first magnetoresistive pattern layer 37 are removed. It has a second magnetoresistive pattern layer 38 on which the -a phase magnetoresistive pattern 12 and the +b phase magnetoresistive pattern 13, which are magnetoresistive patterns, are formed.

The first magnetoresistive pattern layer 37 is formed in a rectangular shape. In the first magnetoresistive pattern layer 37, four magnetoresistive patterns 27a-27d, four magnetoresistive patterns 28a-28d, four magnetoresistive patterns 33a-33d, and four magnetoresistive patterns 34a-34d are arranged in an arc. Specifically, each of the four magnetoresistive patterns 27a-27d, the four magnetoresistive patterns 28a-28d, the four magnetoresistive patterns 33a-33d, and the four magnetoresistive patterns 34a-34d They are arranged in an arc with the center of the magnetic scale 2 as the center of curvature.

The magnetoresistive patterns 27a-27d and the magnetoresistive patterns 33a-33d are arranged at the same position in the radial direction. The magnetoresistive patterns 28a-28d and the magnetoresistive patterns 34a-34d are arranged at the same position in the radial direction. In this embodiment, the magnetoresistive patterns 27a-27d and 33a-33d are arranged radially outside the magnetoresistive patterns 28a-28d and 34a-34d.

In addition, in this embodiment, the power supply terminal 17 and the ground terminal 18 are arranged at the center of the MR chip 5 in the circumferential direction, and the magnetoresistive patterns 33a to 33d and 34a to 34d are arranged at the power supply terminal 17 and the ground terminal in the circumferential direction. 18 in the circumferential direction (specifically, in the clockwise direction in FIG. 7). It is arranged on the other side in the circumferential direction (specifically, on the counterclockwise direction side in FIG. 7) of the center of the terminal 18 . In the following description, the clockwise direction in FIG. 7 is referred to as "clockwise", and the counterclockwise direction in FIG. 7 is referred to as "counterclockwise".

The second magnetoresistive pattern layer 38 is formed in the same rectangular shape as the first magnetoresistive pattern layer 37 . In the second magnetoresistive pattern layer 38, four magnetoresistive patterns 29a-29d, four magnetoresistive patterns 30a-30d, four magnetoresistive patterns 31a-31d, and four magnetoresistive patterns 32a-32d are arranged in an arc. Specifically, each of the four magnetoresistive patterns 29a to 29d, the four magnetoresistive patterns 30a to 30d, the four magnetoresistive patterns 31a to 31d, and the four magnetoresistive patterns 32a to 32d They are arranged in an arc with the center of the magnetic scale 2 as the center of curvature.

The magnetoresistive patterns 29a-29d and the magnetoresistive patterns 31a-31d are arranged at the same position in the radial direction. The magnetoresistive patterns 30a-30d and the magnetoresistive patterns 32a-32d are arranged at the same position in the radial direction. In this embodiment, the magnetoresistive patterns 29a to 29d and 31a to 31d are arranged radially outside the magnetoresistive patterns 30a to 30d and 32a to 32d. In addition, the magnetoresistive patterns 29a to 29d and 31a to 31d are arranged at the same positions as the magnetoresistive patterns 27a to 27d and 33a to 33d in the radial direction, and the magnetoresistive patterns 30a to 30d and 32a to 32d are arranged in the radial direction at , are arranged at the same positions as the magnetoresistive patterns 28a to 28d and 34a to 34d.

The magnetic resistance patterns 29a to 29d and 30a to 30d are arranged on one side in the circumferential direction (clockwise direction) of the center of the power supply terminal 17 and the ground terminal 18 in the circumferential direction. 32a to 32d are arranged on the other circumferential side (counterclockwise side) of the centers of the power supply terminal 17 and the ground terminal 18 in the circumferential direction. The power terminal 17 is arranged at the outer end of the MR chip 5 in the radial direction, and the ground terminal 18 is arranged at the inner end of the MR chip 5 in the radial direction. Terminals 20 and 21 are arranged at the outer end of MR chip 5 in the radial direction and terminals 19 and 22 are arranged at the inner end of MR chip 5 in the radial direction. The terminals 20 and 22 are arranged on the clockwise end side of the MR chip 5 , and the terminals 19 and 21 are arranged on the counterclockwise end side of the MR chip 5 .

The four magnetic resistance patterns 27a to 27d are arranged in this order from one end side to the other end side in the circumferential direction (specifically, counterclockwise), and the four magnetic resistance patterns 28a to 28d are arranged in this order. 28d are arranged in this order clockwise. The four magnetoresistive patterns 29a-29d are arranged in this order clockwise, and the four magnetoresistive patterns 30a-30d are arranged in this order counterclockwise. The four magnetoresistive patterns 31a-31d are arranged in this order counterclockwise, and the four magnetoresistive patterns 32a-32d are arranged in this order clockwise. The four magnetoresistive patterns 33a-33d are arranged in this order clockwise, and the four magnetoresistive patterns 34a-34d are arranged in this order counterclockwise.

The magnetoresistive pattern 27a of the present embodiment is a one-end magnetoresistive pattern that is arranged closest to one end in the circumferential direction, which is the relative movement direction of the magnetic sensor 3 with respect to the magnetic scale 2, among the four magnetoresistive patterns 27a to 27d. , the magnetoresistive pattern 27d is the other-end-side magnetoresistive pattern arranged on the most other-end side in the circumferential direction among the four magnetoresistive patterns 27a to 27d.

Further, the magnetoresistive pattern 28d of the present embodiment is the one-end-side magnetoresistive pattern arranged closest to one end in the circumferential direction among the four magnetoresistive patterns 28a to 28d. Among the resistance patterns 28a to 28d, this is the other end side magnetoresistive pattern that is arranged on the farthest other end side in the circumferential direction. Similarly, the magnetoresistive patterns 29d, 30a, 31a, 32d, 33d, and 34a of this embodiment are magnetoresistive patterns on one end side, and the magnetoresistive patterns 29a, 30d, 31d, 32a, 33a, and 34d are magnetoresistive patterns on the other end side. resistance pattern.

As shown in FIGS. 8 and 9, the magnetoresistive patterns 27a to 27d, 28a to 28d, 29a to 29d, 30a to 30d, 31a to 31d, 32a to 32d, 33a to 33d, and 34a to 34d are arranged in a predetermined direction. is formed by folding back a straight conductor with a longitudinal direction of . The magnetoresistive patterns 27a-27d, 28a-28d, 29a-29d, 30a-30d, 31a-31d, 32a-32d, 33a-33d, and 34a-34d of this embodiment are formed in a rectangular shape. In addition, the magnetoresistive patterns 27a to 27d, 28a to 28d, 29a to 29d, 30a to 30d, 31a to 31d, 32a to 32d, 33a to 33d, and 34a to 34d of this embodiment are all formed in the same shape. .

As shown in FIG. 1, let λ be the central angle formed by one N pole and one S pole adjacent in the circumferential direction with respect to the center of the magnetic scale 2 (that is, the magnitude of the central angle (angle) is λ), each of the magnetoresistive patterns 27a to 27d, 28a to 28d, 29a to 29d, 30a to 30d, 31a to 31d, 32a to 32d, 33a to 33d, and 34a to 34d is defined by λ/8 are formed so as to fit in circular regions RA1 and RA2 having a diameter of 1 (see FIG. 8).

Specifically, each of the magnetoresistive patterns 27a to 27d, 29a to 29d, 31a to 31d, and 33a to 33d is formed to fit within the circular area RA1, and the magnetoresistive patterns 28a to 28d, 30a to 30d, and 32a to Each of 32d and 34a to 34d is formed so as to fit within the circular area RA2. In this embodiment, the diameter of the circular area RA1 is equal to the circumferential width of one N pole where the magnetoresistive patterns 27a to 27d, 29a to 29d, 31a to 31d, and 33a to 33d are arranged in the radial direction. It is 1/8 of the sum with the width of one S pole in the circumferential direction. In addition, the diameter of the circular area RA2 is the circumferential width of one N pole and one is 1/8 of the sum of the width of the S pole in the circumferential direction.

As shown in FIG. 8, the four magnetoresistive patterns 27a to 27d are arranged at a pitch of λ/8 in the circumferential direction. Similarly, the four magnetoresistive patterns 28a to 28d are arranged at a pitch of λ/8 in the circumferential direction, the four magnetoresistive patterns 29a to 29d are arranged at a pitch of λ/8 in the circumferential direction, and the four magnetoresistive patterns 29a to 29d are arranged at a pitch of λ/8 in the circumferential direction. The magnetoresistive patterns 30a to 30d are arranged at a pitch of λ/8 in the circumferential direction, the four magnetoresistive patterns 31a to 31d are arranged at a pitch of λ/8 in the circumferential direction, and the four magnetoresistive patterns 32a to 32d are arranged. are arranged at a pitch of λ/8 in the circumferential direction, the four magnetoresistive patterns 33a to 33d are arranged at a pitch of λ/8 in the circumferential direction, and the four magnetoresistive patterns 34a to 34d are arranged at a pitch of λ in the circumferential direction. They are arranged at a /8 pitch.

Therefore, as shown in FIGS. 2 and 3, the four magnetoresistive patterns 27a to 27d are arranged in a range of λ/2 in the circumferential direction, and the four magnetoresistive patterns 28a to 28d are arranged in a range of λ /2, the four magnetoresistive patterns 29a to 29d are arranged in a range of λ/2 in the circumferential direction, and the four magnetoresistive patterns 30a to 30d are arranged in a range of λ/2 in the circumferential direction. , the four magnetoresistive patterns 31a to 31d are arranged in a range of λ / 2 in the circumferential direction, and the four magnetoresistive patterns 32a to 32d are arranged in a range of λ / 2 in the circumferential direction, The four magnetoresistive patterns 33a-33d are arranged in a range of λ/2 in the circumferential direction, and the four magnetoresistive patterns 34a-34d are arranged in a range of λ/2 in the circumferential direction.

That is, four magnetoresistive patterns 27a to 27d, four magnetoresistive patterns 28a to 28d, four magnetoresistive patterns 29a to 29d, four magnetoresistive patterns 30a to 30d, and four magnetoresistive patterns 31a to 31d. 31d, the four magnetoresistive patterns 32a-32d, the four magnetoresistive patterns 33a-33d, and the four magnetoresistive patterns 34a-34d each have the width of one N pole in the circumferential direction (or one is arranged within the range of the width of the S pole in the circumferential direction).

In the MR chip 5, the +a phase magnetoresistive pattern 11 and the −b phase magnetoresistive pattern 14 formed on the first magnetoresistive pattern layer 37 and the −a phase magnetoresistive pattern 14 formed on the second magnetoresistive pattern layer 38 are formed. A first magnetoresistive pattern layer 37 and a second magnetoresistive pattern layer 38 are stacked such that the resistor pattern 12 and the +b-phase magnetoresistive pattern 13 are superimposed. That is, the MR chip 5 has a two-layer structure in which the first magnetoresistive pattern layer 37 and the second magnetoresistive pattern layer 38 are laminated.

Specifically, each of the magnetoresistive patterns 27a to 27d and each of the magnetoresistive patterns 31a to 31d are overlapped, each of the magnetoresistive patterns 28a to 28d and each of the magnetoresistive patterns 32a to 32d are overlapped, and the magnetoresistive patterns The first magnetoresistive pattern layer 37 and the second magnetoresistive pattern layer 37 overlap each of the magnetoresistive patterns 33a to 33d and each of the magnetoresistive patterns 29a to 29d, and each of the magnetoresistive patterns 34a to 34d and each of the magnetoresistive patterns 30a to 30d overlap. 2 magnetoresistive pattern layers 38 are laminated.

The magnetoresistive patterns 28a to 28d, 30a to 30d, 32a to 32d, and 34a to 34d are arranged at positions where the rotating magnetic field H1 is generated in the radial direction. 33d are arranged at positions where the rotating magnetic field H2 is generated in the radial direction. That is, the ground side +a phase magnetoresistive pattern 28, the ground side −a phase magnetoresistive pattern 30, the ground side +b phase magnetoresistive pattern 32, and the ground side −b phase magnetoresistive pattern 34 are arranged in a rotating magnetic field in the radial direction. The power source side +a phase magnetoresistive pattern 27, the power source side −a phase magnetoresistive pattern 29, the power source side +b phase magnetoresistive pattern 31, and the power source side −b phase magnetoresistive pattern 33 are arranged at positions where H1 is generated. are arranged at positions where the rotating magnetic field H2 is generated in the radial direction.

The longitudinal directions of the conductors of the four magnetoresistive patterns 27a to 27d change from the magnetoresistive pattern 27a toward the magnetoresistive pattern 27d by a predetermined angle. Specifically, the longitudinal directions of the conductors of the four magnetoresistive patterns 27a to 27d change clockwise by 45 degrees from the magnetoresistive pattern 27a toward the magnetoresistive pattern 27d.

Similarly, the longitudinal directions of the conductors of the four magnetoresistive patterns 28a to 28d are changed from the magnetoresistive pattern 28d toward the magnetoresistive pattern 28a by a predetermined angle in a constant direction, resulting in the four magnetoresistive patterns 29a to 29d. The longitudinal direction of each of the conductors changes from the magnetoresistive pattern 29d toward the magnetoresistive pattern 29a by a predetermined angle in a constant direction, and the longitudinal direction of each conductor of the four magnetoresistive patterns 30a to 30d changes from the magnetoresistive pattern 29d to the magnetoresistive pattern 29a. It changes from 30a toward the magnetoresistive pattern 30d by a predetermined angle in a certain direction.

In addition, the longitudinal direction of the conductors of the four magnetoresistive patterns 31a to 31d changes from the magnetoresistive pattern 31a toward the magnetoresistive pattern 31d by a predetermined angle in a constant direction, and the four magnetoresistive patterns 32a to 32d The longitudinal direction of each conductor changes from the magnetoresistive pattern 32d toward the magnetoresistive pattern 32a by a predetermined angle in a constant direction. to the magnetoresistive pattern 33a toward the magnetoresistive pattern 33a by a predetermined angle, and the longitudinal direction of each of the four magnetoresistive patterns 34a to 34d is a predetermined constant direction from the magnetoresistive pattern 34a toward the magnetoresistive pattern 34d. The angle is changed.

Specifically, the longitudinal direction of the conductors of each of the four magnetoresistive patterns 28a to 28d changes counterclockwise by 45° from the magnetoresistive pattern 28d toward the magnetoresistive pattern 28a. The longitudinal direction of each conductor of 29a-29d changes clockwise by 45° from magnetoresistive pattern 29d toward magnetoresistive pattern 29a, and the longitudinal direction of each conductor of four magnetoresistive patterns 30a-30d is It changes counterclockwise by 45° from the magnetoresistive pattern 30a toward the magnetoresistive pattern 30d.

The longitudinal direction of each conductor of the four magnetoresistive patterns 31a to 31d changes clockwise by 45 degrees from the magnetoresistive pattern 31a toward the magnetoresistive pattern 31d. The longitudinal direction of each conductor changes counterclockwise by 45° from the magnetoresistive pattern 32d toward the magnetoresistive pattern 32a. The longitudinal directions of the conductors of the four magnetoresistive patterns 34a to 34d change clockwise from 33d toward the magnetoresistive pattern 33a by 45 degrees, and the longitudinal directions of the conductors of each of the four magnetoresistive patterns 34a to 34d are counterclockwise from the magnetoresistive pattern 34a toward the magnetoresistive pattern 34d. 45° at a time.

As shown in FIGS. 2 and 3, in the rotating magnetic field H1, the direction of the magnetic vector rotates counterclockwise toward the counterclockwise side of the magnetic scale 2 . In the rotating magnetic field H1, the direction of the magnetic vector changes counterclockwise by 45° within the range of λ/8 toward the counterclockwise side of the magnetic scale 2 . In the rotating magnetic field H2, the direction of the magnetic vector rotates clockwise toward the counterclockwise side of the magnetic scale 2. FIG. In the rotating magnetic field H2, the direction of the magnetic vector changes clockwise by 45° within the range of λ/8 toward the counterclockwise side of the magnetic scale 2 .

In the magnetoresistive patterns 28a to 28d arranged at positions where the rotating magnetic field H1 is generated in the radial direction, the longitudinal directions of the conductors of the four magnetoresistive patterns 28a to 28d are rotated counterclockwise. It is rotating in the same direction as the rotating direction of H1. Similarly, in the magnetoresistive patterns 30a to 30d arranged at the position where the rotating magnetic field H1 is generated in the radial direction, the longitudinal direction of the conductors of the four magnetoresistive patterns 30a to 30d is oriented counterclockwise. Therefore, it rotates in the same direction as the rotation direction of the rotating magnetic field H1.

Further, in the magnetoresistive patterns 32a to 32d arranged at positions where the rotating magnetic field H1 is generated in the radial direction, the longitudinal directions of the conductors of the four magnetoresistive patterns 32a to 32d are arranged in the counterclockwise direction. In the magnetoresistive patterns 34a to 34d that rotate in the same direction as the rotation direction of the rotating magnetic field H1 and are arranged at positions where the rotating magnetic field H1 is generated in the radial direction, the conductors of the four magnetoresistive patterns 34a to 34d are arranged in the longitudinal direction. rotates in the same direction as the rotating magnetic field H1 toward the counterclockwise direction.

In the magnetoresistive patterns 27a to 27d arranged at positions where the rotating magnetic field H2 is generated in the radial direction, the longitudinal directions of the conductors of the four magnetoresistive patterns 27a to 27d are rotated counterclockwise. It is rotating in the same direction as the rotating direction of H2. Similarly, in the magnetoresistive patterns 29a to 29d arranged at positions where the rotating magnetic field H2 is generated in the radial direction, the longitudinal directions of the conductors of the four magnetoresistive patterns 29a to 29d are oriented counterclockwise. Therefore, it rotates in the same direction as the rotating direction of the rotating magnetic field H2.

Further, in the magnetoresistive patterns 31a to 31d arranged at positions where the rotating magnetic field H2 is generated in the radial direction, the longitudinal directions of the conductors of the four magnetoresistive patterns 31a to 31d are oriented counterclockwise. In the magnetoresistive patterns 33a to 33d, which rotate in the same direction as the rotation direction of the rotating magnetic field H2 and are arranged at positions where the rotating magnetic field H2 is generated in the radial direction, the conductors of the four magnetoresistive patterns 33a to 33d are arranged in the longitudinal direction. rotates in the same direction as the rotating magnetic field H2 toward the counterclockwise direction.

That is, in this embodiment, the magnetoresistive patterns 28a to 28d, 30a to 30d, 32a to 32d, and 34a to 34d arranged at positions where the rotating magnetic field H1 is generated in the radial direction are arranged at positions equivalent to the rotating magnetic field H1. ing. Magnetoresistive patterns 27a to 27d, 29a to 29d, 31a to 31d, and 33a to 33d, which are arranged at positions where the rotating magnetic field H2 is generated in the radial direction, are arranged at positions equivalent to the rotating magnetic field H2.

In this embodiment, the longitudinal direction of the conductors of the magnetoresistive patterns 27a and 33a coincides with the circumferential direction, and the longitudinal direction of the conductors of the magnetoresistive patterns 28d and 34d coincides with the radial direction. The longitudinal direction of the conductors of the magnetoresistive patterns 29a and 30d is inclined 45 degrees clockwise with respect to the circumferential direction, and the longitudinal direction of the conductors of the magnetoresistive patterns 31a and 32d is counterclockwise with respect to the circumferential direction. is tilted 45° to

(Main effects of this form)
As described above, in this embodiment, the longitudinal direction of the conductors of the four magnetoresistive patterns 27a to 27d constituting the +a-phase magnetoresistive pattern 27 on the power supply side extends from the magnetoresistive pattern 27a to the magnetoresistive pattern 27d. It changes by a predetermined angle in a certain direction. Therefore, in this embodiment, when an external magnetic field is applied to the magnetic sensor device 1, the magnetic resistance patterns 27a to 27d are affected in different directions. Therefore, in this embodiment, when an external magnetic field is applied to the magnetic sensor device 1, it is possible to cancel out the influence of the external magnetic field acting on each of the magnetoresistive patterns 27a to 27d. That is, in this embodiment, it is possible to cancel the influence of the external magnetic field on the +a-phase magnetoresistive pattern 27 on the power supply side, and as a result, the influence of the external magnetic field acting on the +a-phase magnetoresistive pattern 27 on the power supply side is reduced. it becomes possible to

Similarly, in this embodiment, the longitudinal direction of the conductors of the magnetoresistive patterns 28a to 28d, the longitudinal direction of the conductors of the magnetoresistive patterns 29a to 29d, the longitudinal direction of the conductors of the magnetoresistive patterns 30a to 30d, the magnetic The longitudinal direction of the conductors of the resistance patterns 31a to 31d, the longitudinal direction of the conductors of the magnetoresistive patterns 32a to 32d, the longitudinal direction of the conductors of the magnetoresistive patterns 33a to 33d, and the conductors of the magnetoresistive patterns 34a to 34d. Since the longitudinal direction of each conductor is changed by a predetermined angle in a fixed direction, when an external magnetic field is applied to the magnetic sensor device 1, the magnetic resistance pattern 28 of the +a phase on the ground side and the magnetic resistance pattern of the -a phase on the power supply side 29, ground side -a phase magnetoresistive pattern 30, power supply side +b phase magnetoresistive pattern 31, ground side +b phase magnetoresistive pattern 32, power supply side -b phase magnetoresistive pattern 33 and ground side -b phase It is possible to cancel the influence of the external magnetic field in each of the magnetoresistive patterns 34, and as a result, the ground side +a phase magnetoresistive pattern 28, the power supply side -a phase magnetoresistive pattern 29, the ground side -a phase It acts on the magnetoresistive pattern 30, the +b-phase magnetoresistive pattern 31 on the power supply side, the +b-phase magnetoresistive pattern 32 on the ground side, the -b-phase magnetoresistive pattern 33 on the power supply side, and the -b-phase magnetoresistive pattern 34 on the ground side. It is possible to reduce the influence of an external magnetic field that

Thus, in this embodiment, when an external magnetic field is applied to the magnetic sensor device 1, the power supply side +a phase magnetoresistive pattern 27, the ground side +a phase magnetoresistive pattern 28, and the power supply side -a phase magnetoresistive pattern 29 , the ground side -a phase magnetoresistive pattern 30, the power supply side +b phase magnetoresistive pattern 31, the ground side +b phase magnetoresistive pattern 32, the power supply side -b phase magnetoresistive pattern 33, and the ground side -b phase magnetic Since it is possible to reduce the influence of the external magnetic field acting on the resistance pattern 34, even if a magnetic field is applied from the outside of the magnetic sensor device 1, it is possible to suppress deterioration in the detection accuracy of the magnetic sensor device 1. .

Especially in this embodiment, the longitudinal direction of each conductor of the four magnetoresistive patterns 27a to 27d arranged in the range of λ/2 in the circumferential direction changes by 45° from the magnetoresistive pattern 27a to the magnetoresistive pattern 27d. Therefore, when an external magnetic field is applied to the magnetic sensor device 1, it is possible to effectively cancel out the influence of the external magnetic field acting on each of the magnetoresistive patterns 27a to 27d. That is, in this embodiment, it is possible to effectively cancel the influence of the external magnetic field on the +a-phase magnetoresistive pattern 27 on the power supply side. It becomes possible to reduce the impact effectively.

Similarly, in this embodiment, the longitudinal direction of the conductors of the magnetoresistive patterns 28a to 28d, the longitudinal direction of the conductors of the magnetoresistive patterns 29a to 29d, which are arranged in the range of λ/2 in the circumferential direction, the magnetoresistive Longitudinal direction of conductors of patterns 30a-30d, longitudinal direction of conductors of magnetoresistive patterns 31a-31d, longitudinal direction of conductors of magnetoresistive patterns 32a-32d, conductors of magnetoresistive patterns 33a-33d Since the longitudinal direction and the longitudinal direction of each conductor of the magnetoresistive patterns 34a to 34d are changed by 45°, the ground side +a phase magnetoresistive pattern 28, the power supply side -a phase magnetoresistive pattern 29, and the ground side -a phase magnetoresistive pattern 30, power supply side +b phase magnetoresistive pattern 31, ground side +b phase magnetoresistive pattern 32, power supply side -b phase magnetoresistive pattern 33, and ground side -b phase magnetoresistive pattern 34, the effect of the external magnetic field can be effectively canceled out. It acts on the magnetoresistive pattern 30, the +b-phase magnetoresistive pattern 31 on the power supply side, the +b-phase magnetoresistive pattern 32 on the ground side, the -b-phase magnetoresistive pattern 33 on the power supply side, and the -b-phase magnetoresistive pattern 34 on the ground side. It is possible to effectively reduce the influence of the external magnetic field that acts on the magnetic field. Therefore, in this embodiment, even if a magnetic field is applied to the magnetic sensor device 1 from the outside, it is possible to effectively suppress deterioration in the detection accuracy of the magnetic sensor device 1 .

In this embodiment, the magnetoresistive patterns 28a to 28d, 30a to 30d, 32a to 32d, and 34a to 34d arranged at positions where the rotating magnetic field H1 is generated in the radial direction are arranged at positions equivalent to the rotating magnetic field H1. The magnetoresistive patterns 27a to 27d, 29a to 29d, 31a to 31d, and 33a to 33d, which are arranged at positions where the rotating magnetic field H2 is generated in the direction, are arranged at positions equivalent to the rotating magnetic field H2.

Therefore, in this embodiment, the longitudinal direction of the conductors of the magnetoresistive patterns 27a to 27d, the longitudinal direction of the conductors of the magnetoresistive patterns 28a to 28d, the longitudinal direction of the conductors of the magnetoresistive patterns 29a to 29d, the magnetoresistive Longitudinal direction of conductors of patterns 30a-30d, longitudinal direction of conductors of magnetoresistive patterns 31a-31d, longitudinal direction of conductors of magnetoresistive patterns 32a-32d, conductors of magnetoresistive patterns 33a-33d Even if the longitudinal direction and the longitudinal direction of each of the conductors of the magnetoresistive patterns 34a to 34d change by a predetermined angle in a certain direction, it is possible to prevent the output of the magnetic sensor 3 from decreasing.

In this embodiment, the magnetoresistive patterns 27a-27d are connected in series, the magnetoresistive patterns 28a-28d are connected in series, the magnetoresistive patterns 29a-29d are connected in series, and the magnetoresistive patterns 30a-30d are connected in series. , are connected in series, the magnetoresistive patterns 31a to 31d are connected in series, the magnetoresistive patterns 32a to 32d are connected in series, the magnetoresistive patterns 33a to 33d are connected in series, and the magnetoresistive patterns 34a to 34d are connected in series. 34d are connected in series.

Therefore, in this embodiment, the +a-phase magnetoresistive pattern 27 on the power supply side, the +a-phase magnetoresistive pattern 28 on the ground side, the -a-phase magnetoresistive pattern 29 on the power supply side, the -a-phase magnetoresistive pattern 30 on the ground side, and the power supply side The resistance values of the +b-phase magnetoresistive pattern 31, the ground-side +b-phase magnetoresistive pattern 32, the power supply-side −b-phase magnetoresistive pattern 33, and the ground-side −b-phase magnetoresistive pattern 34 are increased. , it is possible to reduce the current value in each of these magnetoresistive patterns. Therefore, in this embodiment, the power consumption of the magnetic sensor 3 can be reduced.

(simulation)
FIG. 10(A) is a graph showing the results obtained from a simulation in which an external magnetic field is applied to the magnetic sensor device 1 shown in FIG. 1, and FIG. FIG. 10 is a graph showing results obtained in addition simulations; FIG.

A simulation was performed in which an external magnetic field was applied to the magnetic sensor device 1 and the conventional magnetic sensor device described in Patent Document 1 above. In this simulation, the angle when the direction of the external magnetic field faces the counterclockwise direction of the magnetic scale 2 is 0°, and the magnetic sensor generated when the direction of the external magnetic field is rotated 360° at a pitch of 22.5° The error of the device 1 and the error of the conventional magnetic sensor device were determined. Also, in this simulation, the diameter of the magnetic scale 2 was set to 20 mm, and λ was set to 11.25°.

Furthermore, in this simulation, the strength of the magnetic field generated by the magnetic scale 2 was set at 10 mT (millitesla), and the strength of the external magnetic field was set at 3 mT. In FIG. 10, numbers arranged in the circumferential direction of the graph indicate the direction (angle) of the external magnetic field. Also, in FIG. 10, the numbers arranged in the radial direction of the graph indicate the magnitude of the error that occurs. The generated error represents an angle when one N pole and one S pole are 360°.

FIG. 10A shows the simulation result of the magnetic sensor device 1, and FIG. 10B shows the simulation result of the conventional magnetic sensor device. As shown in FIG. 10, in the simulation, the magnetic sensor device according to the prior art generated an error of about 1.7° at maximum, while the error generated in the magnetic sensor device 1 of this embodiment was 0.7° at maximum. It was about 2°. That is, from the results of this simulation, the magnetic sensor device 1 of the present embodiment has a detection accuracy of the magnetic sensor device 1 that is lower than that of the magnetic sensor device according to the prior art even when a magnetic field is applied from the outside of the magnetic sensor device 1. It can be seen that the decrease can be greatly suppressed.

(Modified example of MR chip)
11 and 12 are diagrams for explaining the configuration of the MR chip 5 according to another embodiment of the invention.

In the embodiment described above, the MR chip 5 has a two-layer structure in which the first magnetoresistive pattern layer 37 and the second magnetoresistive pattern layer 38 are laminated. , +a-phase magnetoresistive pattern 11, -a-phase magnetoresistive pattern 12, +b-phase magnetoresistive pattern 13, and -b-phase magnetoresistive pattern 14 are formed. It's okay to be. In this case, the cost of the MR chip 5 can be reduced. In addition, in FIG. 11, the same code|symbol is attached|subjected to the structure similar to the form mentioned above. In the example shown in FIG. 11, the −a phase magnetoresistive pattern 12 and the +b phase magnetoresistive pattern 13 are adjacent in the circumferential direction. The pattern 14 may be adjacent in the circumferential direction.

In the above-described embodiment, the MR chip 5 includes the first magnetoresistive pattern layer 41 on which the +a phase magnetoresistive pattern 11 is formed and the second magnetoresistive pattern layer 42 on which the -a phase magnetoresistive pattern is formed. , a third magnetoresistive pattern layer 43 on which a +b phase magnetoresistive pattern is formed, and a fourth magnetoresistive pattern layer 44 on which a −b phase magnetoresistive pattern is formed. good. In this case, as shown in FIG. 12, the first magnetoresistive pattern layer 41, the second magnetoresistive pattern layer 42, the third magnetoresistive pattern layer 43, and the fourth magnetoresistive pattern layer 44 form a +a phase magnetic field. A resistance pattern 11, a -a phase magnetoresistive pattern 12, a +b phase magnetoresistive pattern 13, and a -b phase magnetoresistive pattern 14 are laminated so as to overlap each other.

Specifically, the +a-phase magnetoresistive pattern 27 on the power supply side, the -a-phase magnetoresistive pattern 29 on the power supply side, the +b-phase magnetoresistive pattern 31 on the power supply side, and the -b-phase magnetoresistive pattern 33 on the power supply side overlap, The first magnetic field is arranged such that the ground side +a phase magnetoresistive pattern 28, the ground side -a phase magnetoresistive pattern 30, the ground side +b phase magnetoresistive pattern 32 and the ground side -b phase magnetoresistive pattern 34 overlap each other. A resistive pattern layer 41, a second magnetoresistive pattern layer 42, a third magnetoresistive pattern layer 43 and a fourth magnetoresistive pattern layer 44 are laminated.

In this case, since the MR chip 5 can be miniaturized, the sensor substrate 6 on which the MR chip 5 is mounted can be miniaturized. can be made smaller. Therefore, it is possible to reduce the cost of the package on which the MR chip 5 is mounted. In this case, since the +a-phase magnetoresistive pattern 11, the −a-phase magnetoresistive pattern 12, the +b-phase magnetoresistive pattern 13, and the −b-phase magnetoresistive pattern 14 overlap each other, the magnetic sensor device Even if the strength and direction of the external magnetic field applied to the magnetic sensor device 1 fluctuate within the installation range of the magnetic sensor device 3 , it is possible to suppress deterioration in the detection accuracy of the magnetic sensor device 1 .

When the MR chip 5 has a two-layer structure as in the above embodiment, the cost of the MR chip 5 and the cost of the package in which the MR chip 5 is mounted can be reduced in a well-balanced manner. become.

(Modified example of magnetoresistive pattern)
13A and 13B are graphs showing results obtained from a simulation in which an external magnetic field is applied to the magnetic sensor device 1 according to another embodiment of the present invention.

In the above-described form, the power supply side +a phase magnetoresistive pattern 27, the ground side +a phase magnetoresistive pattern 28, the power supply side -a phase magnetoresistive pattern 29, the ground side -a phase magnetoresistive pattern 30, the power supply side +b Each of the phase magnetoresistive pattern 31, the ground side +b phase magnetoresistive pattern 32, the power source side -b phase magnetoresistive pattern 33, and the ground side -b phase magnetoresistive pattern 34 is divided into two blocks in the circumferential direction. It may be composed of one magnetoresistive pattern, may be composed of three magnetoresistive patterns divided into blocks in the circumferential direction, or may be composed of five or more magnetoresistive patterns divided into blocks in the circumferential direction. It may be configured by

That is, when n is an integer of 2 or more, the power supply side +a phase magnetoresistive pattern 27, the ground side +a phase magnetoresistive pattern 28, the power supply side -a phase magnetoresistive pattern 29, the ground side -a phase magnetoresistive pattern The pattern 30, the +b-phase magnetoresistive pattern 31 on the power supply side, the +b-phase magnetoresistive pattern 32 on the ground side, the -b-phase magnetoresistive pattern 33 on the power supply side, and the -b-phase magnetoresistive pattern 34 on the ground side are arranged in the circumferential direction. may be configured by n magnetoresistive patterns divided into blocks in .

In this case, the n first magnetoresistive patterns forming the +a-phase magnetoresistive pattern 27 on the power supply side are arranged at a pitch of λ/2n in the circumferential direction to form the +a-phase magnetoresistive pattern 28 on the ground side. The n second magnetoresistive patterns are arranged at a pitch of λ/2n in the circumferential direction, and the n third magnetoresistive patterns constituting the power supply side-a phase magnetoresistive pattern 29 are arranged at a pitch of λ/2n in the circumferential direction. The n fourth magnetoresistive patterns arranged at a pitch and constituting the ground side -a phase magnetoresistive pattern 30 are arranged at a pitch of λ/2n in the circumferential direction and constitute the power supply side +b phase magnetoresistive pattern 31. The n fifth magnetoresistive patterns are arranged at a pitch of λ/2n in the circumferential direction, and the n sixth magnetoresistive patterns constituting the ground side +b-phase magnetoresistive pattern 32 are arranged at a pitch of λ/2n in the circumferential direction. The n seventh magnetoresistive patterns that are arranged at a pitch and constitute the power supply side-b phase magnetoresistive pattern 33 are arranged at a pitch of λ/2n in the circumferential direction and form the ground side-b phase magnetoresistive pattern 34. It is preferable that the n eighth magnetoresistive patterns are arranged at a pitch of λ/2n in the circumferential direction.

In this case, the longitudinal direction of the conductors of the n first magnetoresistive patterns, the longitudinal direction of the conductors of the n second magnetoresistive patterns, and the n third magnetoresistive patterns longitudinal direction of each conductor of n fourth magnetoresistive patterns, longitudinal direction of each conductor of n fifth magnetoresistive patterns, n sixth magnetoresistive patterns The longitudinal direction of each conductor of the pattern, the longitudinal direction of each conductor of the n seventh magnetoresistive patterns, and the longitudinal direction of each conductor of the n eighth magnetoresistive patterns are, for example, counterclockwise It is preferable that it changes by 180/n° toward the direction side.

In this case, as in the above embodiment, the +a-phase magnetoresistive pattern 27 on the power supply side, the +a-phase magnetoresistive pattern 28 on the ground side, the −a-phase magnetoresistive pattern 29 on the power supply side, and the −a-phase magnetoresistive pattern on the ground side An external magnetic field is generated in each of the resistance pattern 30, the +b-phase magnetoresistive pattern 31 on the power supply side, the +b-phase magnetoresistive pattern 32 on the ground side, the -b-phase magnetoresistive pattern 33 on the power supply side, and the -b-phase magnetoresistive pattern 34 on the ground side. As a result, the ground side +a phase magnetoresistive pattern 28, the power supply side -a phase magnetoresistive pattern 29, the ground side -a phase magnetoresistive pattern 30, the power supply The influence of the external magnetic field acting on each of the side +b phase magnetoresistive pattern 31, the ground side +b phase magnetoresistive pattern 32, the power supply side -b phase magnetoresistive pattern 33, and the ground side -b phase magnetoresistive pattern 34 is can be effectively reduced.

In this case, as in the above-described mode, n first magnetoresistive patterns, n second magnetoresistive patterns, n third magnetoresistive patterns, and n fourth magnetoresistive patterns The magnetoresistive pattern, the n fifth magnetoresistive patterns, the n sixth magnetoresistive patterns, the n seventh magnetoresistive patterns, and the n eighth magnetoresistive patterns form a rotating magnetic field H1, Since it is arranged at a position equivalent to H2, it is possible to prevent the output of the magnetic sensor 3 from decreasing.

Power supply side +a phase magnetoresistive pattern 27, ground side +a phase magnetoresistive pattern 28, power supply side -a phase magnetoresistive pattern 29, ground side -a phase magnetoresistive pattern 30, power supply side +b phase magnetoresistive pattern 31, a magnetic sensor device in which each of a ground side +b phase magnetoresistive pattern 32, a power supply side -b phase magnetoresistive pattern 33, and a ground side -b phase magnetoresistive pattern 34 is composed of two magnetoresistive patterns. 1, two magnetoresistive patterns are arranged at a pitch of λ/4, and the longitudinal direction of each conductor of the two magnetoresistive patterns changes, for example, by 90° counterclockwise. When a simulation was performed under the same conditions as the above-described conditions in the magnetic sensor device 1 in which a . From the results of this simulation, it can be seen that this magnetic sensor device 1 can also suppress deterioration in the detection accuracy of the magnetic sensor device 1 as compared with the magnetic sensor device according to the prior art.

In addition, the power supply side +a phase magnetic resistance pattern 27, the ground side +a phase magnetic resistance pattern 28, the power supply side -a phase magnetic resistance pattern 29, the ground side -a phase magnetic resistance pattern 30, the power supply side +b phase magnetic Each of the resistance pattern 31, the ground side +b phase magnetoresistive pattern 32, the power supply side -b phase magnetoresistive pattern 33, and the ground side -b phase magnetoresistive pattern 34 is composed of three magnetoresistive patterns. In the sensor device 1, three magnetoresistive patterns are arranged at a pitch of λ/6, and the longitudinal direction of each conductor of the three magnetoresistive patterns is, for example, 60° counterclockwise. When a simulation is performed under the same conditions as the above-described conditions for the magnetic sensor device 1 that is changed every step of the way, the resulting error in this magnetic sensor device 1 is about 0.4° at maximum, as shown in FIG. 13(B). there were. From the results of this simulation, it can be seen that this magnetic sensor device 1 can also suppress deterioration in the detection accuracy of the magnetic sensor device 1 as compared with the magnetic sensor device according to the prior art.

The +a-phase magnetic resistance pattern 27 on the power supply side, the +a-phase magnetic resistance pattern 28 on the ground side, the -a-phase magnetic resistance pattern 29 on the power supply side, the -a-phase magnetic resistance pattern 30 on the ground side, the +b-phase magnetic resistance pattern on the power supply side When each of the resistance pattern 31, the ground side +b phase magnetoresistive pattern 32, the power supply side -b phase magnetoresistive pattern 33, and the ground side -b phase magnetoresistive pattern 34 is composed of n magnetoresistive patterns. Alternatively, the n magnetoresistive patterns may be arranged at a pitch other than the λ/2n pitch in the circumferential direction.

In addition, the power supply side +a phase magnetic resistance pattern 27, the ground side +a phase magnetic resistance pattern 28, the power supply side -a phase magnetic resistance pattern 29, the ground side -a phase magnetic resistance pattern 30, the power supply side +b phase magnetic When each of the resistance pattern 31, the ground side +b phase magnetoresistive pattern 32, the power supply side -b phase magnetoresistive pattern 33, and the ground side -b phase magnetoresistive pattern 34 is composed of n magnetoresistive patterns. Moreover, the longitudinal direction of each conductor of the n magnetoresistive patterns may vary by an angle other than 180/n°. The angle in this case may or may not be constant.

In addition, the number of magnetoresistive patterns constituting the power supply side +a phase magnetoresistive pattern 27, the number of magnetoresistive patterns constituting the ground side +a phase magnetoresistive pattern 28, and the power supply side −a phase magnetoresistive pattern 29 are configured. number of magnetoresistive patterns, number of magnetoresistive patterns composing the ground side -a phase magnetoresistive pattern 30, number of magnetoresistive patterns composing the power supply side +b phase magnetoresistive pattern 31, ground side +b phase magnetism The number of magnetoresistive patterns that compose the resistor pattern 32, the number of magnetoresistive patterns that compose the power supply side-b phase magnetoresistive pattern 33, and the number of magnetoresistive patterns that compose the ground side-b phase magnetoresistive pattern 34 The numbers do not necessarily have to be the same.

(Modified example of magnetic sensor, modified example of magnetic sensor device))
FIG. 14 is a schematic diagram for explaining the configuration of a magnetic sensor 3 according to another embodiment of the invention. FIG. 15 is a schematic diagram for explaining the configuration of a magnetic sensor device 1 according to another embodiment of the invention.

In the embodiment described above, the sensor substrate 6 on which the MR chip 5 is mounted may be a flexible printed circuit board (see FIG. 14). In this case, it becomes easier to mount the magnetic sensor 3 on the magnetic sensor device 1 .

In the form mentioned above, the magnetic sensor device 1 may be a linear encoder. In this case, as shown in FIG. 15, the magnetic scale 2 is linearly formed. Moreover, in this case, the magnetic sensor 3 moves relative to the magnetic scale 2 in the longitudinal direction of the magnetic scale 2 . That is, in this case, the longitudinal direction of the magnetic scale 2 formed in a straight line is the direction of relative movement of the magnetic sensor 3 with respect to the magnetic scale 2, and the magnetic scale 2 is perpendicular to the longitudinal direction of the magnetic scale 2. The width direction is an orthogonal direction orthogonal to the relative movement direction of the magnetic sensor 3 with respect to the magnetic scale 2 .

In this case, four magnetoresistive patterns 27a-27d, four magnetoresistive patterns 28a-28d, four magnetoresistive patterns 29a-29d, four magnetoresistive patterns 30a-30d, and four magnetoresistive patterns. The patterns 31a-31d, the four magnetoresistive patterns 32a-32d, the four magnetoresistive patterns 33a-33d, and the four magnetoresistive patterns 34a-34d are arranged linearly. In this case, the sum of the width of one N pole and the width of one S pole in the longitudinal direction of the magnetic scale 2 is λ (see FIG. 15), and the diameters of the circular regions RA1 and RA2 are λ /8. In addition, in FIG. 15, the same code|symbol is attached|subjected to the structure similar to the form mentioned above.

(Other embodiments)
The embodiment described above is an example of the preferred embodiment of the present invention, but the present invention is not limited to this, and various modifications can be made without departing from the gist of the present invention.

In the form mentioned above, the magnetic scale 2 may be provided with three or more tracks. Further, in the above embodiment, the magnetoresistive patterns 27a to 27d, 28a to 28d, 29a to 29d, 30a to 30d, 31a to 31d, 32a to 32d, 33a to 33d, and 34a to 34d are formed in shapes other than rectangular. It's okay to be. For example, the magnetoresistive patterns 27a to 27d, 28a to 28d, 29a to 29d, 30a to 30d, 31a to 31d, 32a to 32d, 33a to 33d, and 34a to 34d are formed in a circular shape that fits within the circular regions RA1 and RA2. It's okay to be there.

In the above embodiment, the magnetoresistive patterns 27a-27d are connected in series in this order, but the magnetoresistive patterns 27a-27d may be connected in series in random order. For example, the magnetoresistive patterns 27a and 27c are connected in series, the magnetoresistive patterns 27b and 27d are connected in series, and the magnetoresistive patterns 27b and 27c are connected in series. can be Similarly, in the magnetoresistive patterns 28a-28d, 29a-29d, 30a-30d, 31a-31d, 32a-32d, and 34a-34d, the magnetoresistive patterns may be connected in series in random order.

In the form described above, the magnetoresistive patterns 27a to 27d are connected in parallel, the magnetoresistive patterns 28a to 28d are connected in parallel, the magnetoresistive patterns 29a to 29d are connected in parallel, and the magnetoresistive patterns 30a to 30d are connected in parallel. The magnetic resistance patterns 31a to 31d are connected in parallel, the magnetic resistance patterns 32a to 32d are connected in parallel, the magnetic resistance patterns 33a to 33d are connected in parallel, and the magnetic resistance patterns 34a to 34d are connected in parallel. It's okay to be there.

In the embodiment described above, the +a-phase magnetoresistive pattern 11 and the +b-phase magnetoresistive pattern 13 are formed on the first magnetoresistive pattern layer 37, and the -a-phase magnetoresistive pattern 12 and A −b phase magnetoresistive pattern 14 may be formed. In the above embodiment, the +a-phase magnetoresistive pattern 11 and the -a-phase magnetoresistive pattern 12 are formed on the first magnetoresistive pattern layer 37, and the +b-phase magnetoresistive pattern is formed on the second magnetoresistive pattern layer 38. 13 and -b phase magnetoresistive patterns 14 may be formed.

Reference Signs List 1 magnetic sensor device 2 magnetic scale 2a, 2b track 2c facing surface 3 magnetic sensor 8 A-phase magnetoresistive pattern 9 B-phase magnetoresistive pattern 11 +a-phase magnetoresistive pattern 11c +a-phase magnetoresistive pattern midpoint position 12 −a phase magnetoresistive pattern 12c −a phase magnetoresistive pattern midpoint position 13 +b phase magnetoresistive pattern 13c midpoint position of +b phase magnetoresistive pattern 14 −b phase magnetoresistive pattern 14c −b phase magnetoresistive pattern Midpoint position of magnetoresistive pattern 27 Power supply side +a phase magnetoresistive pattern 27a Magnetoresistive pattern (first magnetoresistive pattern, one end side magnetoresistive pattern)
27b, 27c magnetoresistive pattern (first magnetoresistive pattern)
27d magnetoresistive pattern (first magnetoresistive pattern, other end magnetoresistive pattern)
28 Magnetoresistive pattern on ground side +a phase 28a Magnetoresistive pattern (second magnetoresistive pattern, other end magnetoresistive pattern)
28b, 28c magnetoresistive pattern (second magnetoresistive pattern)
28d magnetoresistive pattern (second magnetoresistive pattern, one end magnetoresistive pattern)
29 Power supply side-a phase magnetoresistive pattern 29a magnetoresistive pattern (third magnetoresistive pattern, other end side magnetoresistive pattern)
29b, 29c magnetoresistive pattern (third magnetoresistive pattern)
29d magnetoresistive pattern (third magnetoresistive pattern, one end side magnetoresistive pattern)
30 Ground side-a phase magnetoresistive pattern 30a Magnetoresistive pattern (fourth magnetoresistive pattern, one end side magnetoresistive pattern)
30b, 30c magnetoresistive pattern (fourth magnetoresistive pattern)
30d magnetoresistive pattern (fourth magnetoresistive pattern, other end magnetoresistive pattern)
31 power supply side +b phase magnetoresistive pattern 31a magnetoresistive pattern (fifth magnetoresistive pattern, one end side magnetoresistive pattern)
31b, 31c magnetoresistive pattern (fifth magnetoresistive pattern)
31d magnetoresistive pattern (fifth magnetoresistive pattern, other end magnetoresistive pattern)
32 Magnetoresistive pattern on the ground side +b phase 32a Magnetoresistive pattern (sixth magnetoresistive pattern, other end magnetoresistive pattern)
32b, 32c magnetoresistive pattern (sixth magnetoresistive pattern)
32d magnetoresistive pattern (sixth magnetoresistive pattern, one end magnetoresistive pattern)
33 power supply side-b phase magnetoresistive pattern 33a magnetoresistive pattern (seventh magnetoresistive pattern, other end side magnetoresistive pattern)
33b, 33c magnetoresistive pattern (seventh magnetoresistive pattern)
33d magnetoresistive pattern (seventh magnetoresistive pattern, one end side magnetoresistive pattern)
34 ground side-b phase magnetoresistive pattern 34a magnetoresistive pattern (eighth magnetoresistive pattern, one end side magnetoresistive pattern)
34b, 34c magnetoresistive pattern (eighth magnetoresistive pattern)
34d magnetoresistive pattern (eighth magnetoresistive pattern, other end magnetoresistive pattern)
37 first magnetoresistive pattern layer 38 second magnetoresistive pattern layer 40 common magnetoresistive pattern layer 41 first magnetoresistive pattern layer 42 second magnetoresistive pattern layer 43 third magnetoresistive pattern layer 44 fourth magnetoresistive pattern layer H1, H2 Rotating magnetic field RA1, RA2 Circular area

Claims (9)

A magnetic scale formed in an annular shape, a circular shape, or a linear shape, and a magnetic sensor arranged opposite to the magnetic scale,
When the magnetic scale is formed in an annular or circular shape, the magnetic sensor moves relative to the magnetic scale in the circumferential direction of the magnetic scale, and the magnetic scale is formed linearly. the magnetic sensor moves relative to the magnetic scale in the longitudinal direction of the magnetic scale,
The magnetic scale comprises a plurality of tracks in which N poles and S poles are alternately arranged with the same width in the direction of relative movement of the magnetic sensor with respect to the magnetic scale,
the plurality of tracks are arranged adjacently in an orthogonal direction orthogonal to the direction of relative movement;
In the tracks adjacent in the orthogonal direction, the positions of the N pole and the S pole are shifted by one magnetic pole in the relative movement direction,
At a predetermined position of the track in the orthogonal direction, a rotating magnetic field is generated in which the direction of the magnetic vector in the in-plane direction parallel to the facing surface of the magnetic scale facing the magnetic sensor changes in the relative movement direction,
The magnetic sensor comprises an A-phase magnetoresistive pattern and a B-phase magnetoresistive pattern having a phase difference of 90° from each other,
The A-phase magnetoresistive pattern comprises a +a-phase magnetoresistive pattern and a -a-phase magnetoresistive pattern for detecting relative movement of the magnetic sensor with respect to the magnetic scale with a phase difference of 180°,
The B-phase magnetoresistive pattern comprises a +b-phase magnetoresistive pattern and a −b-phase magnetoresistive pattern for detecting relative movement of the magnetic sensor with respect to the magnetic scale with a phase difference of 180°,
The +a phase magnetoresistive pattern is composed of a power source side +a phase magnetoresistive pattern arranged closer to the power source side than the midpoint position of the +a phase magnetoresistive pattern, and is also arranged on the ground side and is composed of a ground side +a phase magnetoresistive pattern,
The −a phase magnetoresistive pattern includes a power supply side −a phase magnetoresistive pattern arranged closer to the power source side than the midpoint position of the −a phase magnetoresistive pattern, and the −a phase magnetoresistive pattern. Consists of a ground side-a phase magnetoresistive pattern arranged on the ground side of the midpoint position,
The +b phase magnetoresistive pattern is composed of a power source side +b phase magnetoresistive pattern arranged closer to the power source side than the midpoint position of the +b phase magnetoresistive pattern, and is also arranged on the ground side and is composed of a ground side +b phase magnetoresistive pattern,
The −b phase magnetoresistive pattern includes a power source side −b phase magnetoresistive pattern arranged closer to the power source than the midpoint position of the −b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern. It is composed of a ground side-b phase magnetoresistive pattern arranged on the ground side of the midpoint position,
Power supply side +a phase magnetoresistive pattern, ground side +a phase magnetoresistive pattern, power supply side -a phase magnetoresistive pattern, ground side -a phase magnetoresistive pattern, power supply side +b phase magnetoresistive pattern The pattern, the +b-phase magnetoresistive pattern on the ground side, the −b-phase magnetoresistive pattern on the power supply side, and the −b-phase magnetoresistive pattern on the ground side are arranged at positions where the rotating magnetic field is generated in the orthogonal direction. ,
The power supply side +a phase magnetoresistive pattern is composed of a plurality of block-shaped first magnetoresistive patterns divided into blocks in the relative movement direction,
The ground side +a phase magnetoresistive pattern is composed of a plurality of block-shaped second magnetoresistive patterns divided into blocks in the relative movement direction,
The power supply side-a phase magnetoresistive pattern is composed of a plurality of block-shaped third magnetoresistive patterns divided in the relative movement direction,
The ground side -a phase magnetoresistive pattern is composed of a plurality of block-shaped fourth magnetoresistive patterns divided into blocks in the relative movement direction,
The +b-phase magnetoresistive pattern on the power supply side is composed of a plurality of block-shaped fifth magnetoresistive patterns divided into blocks in the relative movement direction,
The ground side +b phase magnetoresistive pattern is composed of a plurality of block-shaped sixth magnetoresistive patterns divided into blocks in the relative movement direction,
The power supply side-b phase magnetoresistive pattern is composed of a plurality of block-shaped seventh magnetoresistive patterns divided into blocks in the relative movement direction,
The ground side -b phase magnetoresistive pattern is composed of a plurality of block-shaped eighth magnetoresistive patterns divided into blocks in the relative movement direction,
The first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, the fourth magnetoresistive pattern, the fifth magnetoresistive pattern, the sixth magnetoresistive pattern, the third Each of the 7 magnetoresistive patterns and the eighth magnetoresistive pattern is formed by multiple folds of a linear conductor whose longitudinal direction is a predetermined direction,
a plurality of the first magnetoresistive patterns, a plurality of the second magnetoresistive patterns, a plurality of the third magnetoresistive patterns, a plurality of the fourth magnetoresistive patterns, a plurality of the fifth magnetoresistive patterns, In each of the plurality of sixth magnetoresistive patterns, the plurality of seventh magnetoresistive patterns, and the plurality of eighth magnetoresistive patterns, the magnetoresistive pattern arranged closest to one end in the relative movement direction is arranged at one end. When the magnetic scale is formed in an annular shape or a circular shape, the magnetic scale is formed in an annular shape or a circular shape. , where λ is the central angle formed by one N pole and one S pole adjacent to each other in the circumferential direction of the magnetic scale with respect to the center of the magnetic scale, and the magnetic scale is formed linearly. is the sum of the width of one N pole and the width of one S pole in the direction of relative movement,
a plurality of the first magnetoresistive patterns, a plurality of the second magnetoresistive patterns, a plurality of the third magnetoresistive patterns, a plurality of the fourth magnetoresistive patterns, a plurality of the fifth magnetoresistive patterns, each of the plurality of sixth magnetoresistive patterns, the plurality of the seventh magnetoresistive patterns, and the plurality of the eighth magnetoresistive patterns are arranged within a range of λ/2 in the relative movement direction;
If n is an integer of 2 or more,
The power supply side +a phase magnetoresistive pattern is composed of n first magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction,
The ground side +a phase magnetoresistive pattern is composed of n second magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction,
The power supply side -a phase magnetoresistive pattern is composed of n third magnetoresistive patterns arranged at a pitch of λ / 2n in the relative movement direction,
The ground side -a phase magnetoresistive pattern is composed of n fourth magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction,
The +b-phase magnetoresistive pattern on the power supply side is composed of n fifth magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction,
The ground side +b phase magnetoresistive pattern is composed of n sixth magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction,
The power supply side -b phase magnetoresistive pattern is composed of n seventh magnetoresistive patterns arranged at a pitch of λ / 2n in the relative movement direction,
The ground side -b phase magnetoresistive pattern is composed of n eighth magnetoresistive patterns arranged at a pitch of λ/2n in the relative movement direction,
a longitudinal direction of the conductors of each of the n first magnetoresistive patterns; a longitudinal direction of the conductors of each of the n second magnetoresistive patterns; and each of the n third magnetoresistive patterns. a longitudinal direction of the conductors of each of n said fourth magnetoresistive patterns; a longitudinal direction of each of said conductors of n said fifth magnetoresistive patterns; a longitudinal direction of the conductors of each of the six magnetoresistive patterns; a longitudinal direction of the conductors of each of the n seventh magnetoresistive patterns; and a longitudinal direction of the conductors of each of the n eighth magnetoresistive patterns. The longitudinal direction of the magnetic sensor device is changed by 180/n° in a constant direction from the one end side magnetoresistive pattern toward the other end side magnetoresistive pattern. The power supply side +a phase magnetoresistive pattern is composed of four first magnetoresistive patterns arranged at a pitch of λ / 8 in the relative movement direction,
The ground side +a phase magnetoresistive pattern is composed of four second magnetoresistive patterns arranged at a pitch of λ/8 in the relative movement direction,
The power supply side -a phase magnetoresistive pattern is composed of four third magnetoresistive patterns arranged at a pitch of λ / 8 in the relative movement direction,
The ground side-a phase magnetoresistive pattern is composed of four fourth magnetoresistive patterns arranged at a pitch of λ/8 in the relative movement direction,
The +b-phase magnetoresistive pattern on the power supply side is composed of four fifth magnetoresistive patterns arranged at a pitch of λ/8 in the relative movement direction,
The ground side +b phase magnetoresistive pattern is composed of four sixth magnetoresistive patterns arranged at a pitch of λ/8 in the relative movement direction,
The power supply side-b phase magnetoresistive pattern is composed of four seventh magnetoresistive patterns arranged at a pitch of λ / 8 in the relative movement direction,
The ground side-b phase magnetoresistive pattern is composed of four eighth magnetoresistive patterns arranged at a pitch of λ/8 in the relative movement direction,
The longitudinal direction of the conductors of each of the four first magnetoresistive patterns, the longitudinal direction of the conductors of each of the four second magnetoresistive patterns, and the longitudinal direction of the conductors of each of the four third magnetoresistive patterns. , the longitudinal direction of each of the four fourth magnetoresistive patterns, the longitudinal direction of each of the four fifth magnetoresistive patterns, the four of the fourth the longitudinal direction of the conductors of each of the six magnetoresistive patterns, the longitudinal direction of the conductors of each of the four of the seventh magnetoresistive patterns, and the conductors of each of the four of the eighth magnetoresistive patterns. 2. The magnetic sensor device according to claim 1 , wherein the longitudinal direction of is changed by 45 degrees from said one end side magnetoresistive pattern toward said other end side magnetoresistive pattern. The first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, the fourth magnetoresistive pattern, the fifth magnetoresistive pattern, the sixth magnetoresistive pattern, the third 3. The magnetic field according to claim 1 , wherein each of the 7 magnetoresistive patterns and the eighth magnetoresistive pattern is formed to fit in a circular area having a diameter defined by λ/2n. sensor device. A plurality of the first magnetoresistive patterns are connected in series, a plurality of the second magnetoresistive patterns are connected in series, a plurality of the third magnetoresistive patterns are connected in series, and a plurality of The fourth magnetoresistive patterns are connected in series, the plurality of fifth magnetoresistive patterns are connected in series, the plurality of sixth magnetoresistive patterns are connected in series, and the plurality of the sixth magnetoresistive patterns are connected in series. 4. The magnetic sensor device according to claim 1 , wherein the seven magnetoresistive patterns are connected in series, and the plurality of eighth magnetoresistive patterns are connected in series. The magnetic sensor has two magnetoresistive patterns selected from the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern. and the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern and the −b phase magnetoresistive pattern, the first A second magnetoresistive pattern layer on which the remaining two magnetoresistive patterns except for the two magnetoresistive patterns formed on the magnetoresistive pattern layer are formed,
The first magnetoresistive pattern layer and the second magnetoresistive pattern layer are defined by the magnetoresistive pattern formed on the first magnetoresistive pattern layer and the magnetoresistive pattern formed on the second magnetoresistive pattern layer. 5. The magnetic sensor device according to claim 1, wherein the magnetic sensor device is laminated so as to overlap. The magnetic sensor includes a common magnetoresistive pattern in which the +a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the +b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern are formed. 5. A magnetic sensor device according to any one of claims 1 to 4 , characterized in that it comprises layers. The magnetic sensor includes a first magnetoresistive pattern layer on which the +a phase magnetoresistive pattern is formed, a second magnetoresistive pattern layer on which the -a phase magnetoresistive pattern is formed, and the +b phase magnetoresistive pattern. A third magnetoresistive pattern layer on which a pattern is formed, and a fourth magnetoresistive pattern layer on which the -b phase magnetoresistive pattern is formed,
The first magnetoresistive pattern layer, the second magnetoresistive pattern layer, the third magnetoresistive pattern layer, and the fourth magnetoresistive pattern layer are composed of the +a phase magnetoresistive pattern and the -a phase magnetoresistive pattern. 5. The magnetic sensor device according to claim 1, wherein the +b-phase magnetoresistive pattern and the −b-phase magnetoresistive pattern are laminated so as to overlap each other. The magnetic scale is formed in an annular or circular shape,
a plurality of the first magnetoresistive patterns, a plurality of the second magnetoresistive patterns, a plurality of the third magnetoresistive patterns, a plurality of the fourth magnetoresistive patterns, a plurality of the fifth magnetoresistive patterns, 2. Each of the plurality of sixth magnetoresistive patterns, the plurality of seventh magnetoresistive patterns, and the plurality of eighth magnetoresistive patterns are arranged in an arc shape. 8. The magnetic sensor device according to any one of 7 to 7 . The magnetic scale is formed linearly,
a plurality of the first magnetoresistive patterns, a plurality of the second magnetoresistive patterns, a plurality of the third magnetoresistive patterns, a plurality of the fourth magnetoresistive patterns, a plurality of the fifth magnetoresistive patterns, 2. Each of the plurality of sixth magnetoresistive patterns, the plurality of seventh magnetoresistive patterns, and the plurality of eighth magnetoresistive patterns are arranged linearly. 8. The magnetic sensor device according to any one of 7 to 7 .

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