JP7249805B2 - Electrode embedded member for semiconductor manufacturing equipment and manufacturing method thereof - Google Patents

Description

The present invention provides an electrode-embedded member for a semiconductor manufacturing apparatus , comprising a substrate, and a mesh electrode composed of a plurality of conductive fabrics of warp and weft and embedded in the substrate, and a method of manufacturing the same. Regarding.

An electrode-embedded member comprising a substrate made of a ceramic sintered body (for example, an AlN sintered body) and an electrode (for example, a heater electrode, an RF electrode, or an electrostatic adsorption electrode) embedded in the substrate , metal (for example, Mo (molybdenum)) wires are used as warp and weft fabric (mesh) is cut into a predetermined shape to produce a mesh electrode (see, for example, Patent Document 1). .

JP 2010-238396 A

However, even though the plurality of regions of the common mesh electrode extend in substantially the same manner, the electrical characteristics of each of the plurality of regions may vary. In addition, even though a plurality of mesh electrodes are produced according to the same cutting pattern, the electrical characteristics of the plurality of mesh electrodes may vary.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an electrode-embedded member for a semiconductor manufacturing apparatus in which variations in electrical characteristics of mesh electrodes are reduced.

An electrode-embedded member for a semiconductor manufacturing apparatus according to the present invention comprises a substrate, and a mesh electrode composed of a fabric of a plurality of conductive warps and a plurality of wefts and embedded in the substrate. wherein the mesh electrode includes at least one or more belt-like portions, and of the belt-like portions, the outer belt-like portion positioned closest to the outer circumference is the end point of each of the plurality of warp yarns and the end point of each of the plurality of warp yarns. defined by respective endpoints of said plurality of weft yarns spaced apart from respective endpoints, wherein endpoints of each of said plurality of warp yarns defining said outer band do not include intersections with said weft yarns and said outer band The end points of each of the plurality of wefts defining a section do not include the intersection with the warp.

According to the electrode-embedded member for a semiconductor manufacturing apparatus having this configuration, the outer belt-shaped portion of the mesh electrode is separated from each end point of a plurality of warp threads (hereinafter referred to as "warp end point") constituting the fabric and from the warp end point. It is defined by each end point of a plurality of weft yarns (hereinafter referred to as "weft end point" as appropriate). The "outer strip" refers to the strip closest to the outer circumference of at least one strip included in the mesh electrode. Thus, the outer strip is defined by warp and weft end points that are in contact with each other, as well as warp and weft end points that are spaced apart from each other, and which are in contact with each other, i.e. Compared to the case where the intersections are irregularly arranged, the arrangement of the intersections of the warp and weft that affect the electrical properties can be adjusted with high precision. Therefore, it is possible to reduce variations in the electrical characteristics of the outer strip and the mesh electrode including the same, and to make them uniform.

In the electrode-embedded member for a semiconductor manufacturing apparatus according to the present invention, the outer belt-shaped portion is defined by a group of warp end points and a group of weft end points that are continuous while being alternately replaced, and the group of warp end points is defined by the warp end points of a plurality of adjacent warps. The weft end point group is composed of the end points aligned in the extending direction of the weft or the end points of one of the warps, and the end points of a plurality of adjacent wefts aligned in the extending direction of the warp or the one of the wefts is preferably configured by the endpoints of

According to the electrode-embedded member for a semiconductor manufacturing apparatus having this configuration, when the mesh electrode is produced by cutting the fabric, the cutting pattern in the outer belt-shaped portion is aligned with the direction in which the warp extends (hereinafter referred to as the "warp direction" as appropriate). ”) and a pattern extending in the weft extending direction (hereinafter referred to as “weft direction” as appropriate). This reliably avoids the irregular arrangement of the mutually contacting end points defined by the mutually contacting warp and weft end points in the outer band, and the electrical The arrangement of the warp and weft crossings, which influences the properties, can be adjusted with high precision. As a result, variations in the electrical properties of the outer strip and the mesh electrode including the same can be reduced and uniformed.
A method of manufacturing an electrode-embedded member for a semiconductor manufacturing apparatus according to the present invention includes a cutting step of defining the outer belt-shaped portion by laser cutting, wherein the laser cutting is stepped in a direction parallel to the warp or the weft. It is characterized by being operated.
According to the method of manufacturing an electrode-embedded member for a semiconductor manufacturing apparatus according to the present invention, the mesh electrode is accurately positioned and then laser-cut, so that the symmetry of the electrode pattern (for example, the center of the electrode pattern is Rotational symmetry with reference or mirror image symmetry with reference to a straight line parallel to the electrode pattern passing through the center is improved, and targeted temperature distribution and temperature uniformity can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view of the schematic configuration of a ceramic susceptor as one embodiment of an electrode-embedded member of the present invention; Explanatory drawing about the structure of a 1st electrode. Explanatory drawing about the structure of a 2nd electrode. Explanatory drawing about 1st Embodiment of the micro-contour of a mesh electrode. Explanatory drawing about 2nd Embodiment of the micro-contour of a mesh electrode. Explanatory drawing about the electrical characteristic of a 1st electrode (Example). Explanatory drawing about the electrical characteristic of a 1st electrode (comparative example). Explanatory drawing about the electrical characteristic of a 2nd electrode (Example). Explanatory drawing about the electrical characteristic of a 2nd electrode (comparative example).

(composition)
A ceramic susceptor 1, which is an embodiment of an electrode-embedded member of the present invention schematically shown in FIG. 412 and a pair of second terminals 421 and 422 . The ceramic heater 1 can be applied as a ceramic product for semiconductor manufacturing equipment (for example, film deposition equipment, etching equipment, cleaning equipment, inspection equipment, etc.) used in various semiconductor manufacturing processes.

The substrate 100 is composed of a substantially disc-shaped ceramic sintered body having a substantially flat first main surface 101 and a second main surface 102 on the opposite side. The first main surface 101 constitutes a mounting surface on which a substrate such as a wafer is mounted. For convenience in explaining the configuration of each component of the ceramic susceptor 1, mutually orthogonal directions parallel to the first main surface 101 are defined as the x direction and the y direction, and the direction perpendicular to the first main surface 101 is defined as the x direction and the y direction. Defined as the z-direction. The base 100 may be joined on the second main surface 102 to a cylindrical support member that surrounds the pair of first terminals 411 and 412 and the pair of second terminals 421 and 422 on the inner peripheral surface.

As the material of the substrate 100, known ceramic materials such as aluminum nitride, silicon nitride, nitride ceramics such as boron nitride and sialon, and alumina-silicon carbide composite materials can be used. Aluminum nitride or alumina is preferable as the material in order to impart high corrosion resistance to corrosive gases such as halogen-based gases.

The first electrode 210 is embedded in the base 100 in a posture parallel to the first main surface 101 of the base 100 . For convenience of explanation of the shape of the first electrode 210, as shown in FIG. The angle θ is 0 [rad], the azimuth θ in the upward direction (+y direction) is (1/2) π [rad], and the azimuth θ in the left direction (−x direction) is π [rad] or -π [rad]. ], and the azimuth angle θ in the downward direction (−y direction) is −(1/2)π [rad].

The right half of the first electrode 210 includes a meandering region S120, a first semi-annular region S121, a first connection region S111, a second semi-annular region S122, a second connection region S112, a third semi-annular region S123, and a third semi-annular region S123. It is roughly divided into a 3-connection region S113 and a fourth semi-annular region S124.

The meandering region S120 extends downward from a local region R101 (θ to π/2) on the upper right of the center of the first electrode 210 while slightly meandering left and right, and also extends left and right on the right side of the downward extension. It is a region extending upward while slightly meandering to reach a local region R102 (θ to π/2).

The first semi-annular region S121 extends from the local region R102 outside the meandering region S120 to a local region R103 (θ to π/4), a local region R104 (θ to 0), and a local region R105 (θ to −π/ 4) to a local region R106 (θ to -π/2) in a substantially semicircular shape. The first connection region S111 is a region extending linearly from the local region R106 downward to the local region R107 (θ to -π/2).

The second semi-annular region S122 extends from the local region R107 outside the first semi-annular region S121 to a local region R108 (θ ~ -π/4), a local region R109 (θ ~ 0), and a local region R110 ( θ to π/4) to the local region R111 (θ to π/2) in a substantially semicircular shape. The second connection region S112 is a region linearly extending upward from the local region R111 to the local region R112 (θ to π/2).

The third semi-annular region S123 is formed from the local region R112 outside the second semi-annular region S122, from the local region R113 (θ to π/4), the local region R114 (θ to 0), and the local region R115 (θ ˜−π/4) to the local region R116 (θ˜−π/2) in a substantially semicircular shape. The third connection region S113 is a region extending linearly from the local region R116 downward to the local region R117 (θ to -π/2).

The fourth semi-annular region S124 extends from the local region R117 outside the third semi-annular region S123 to a local region R118 (θ ~ -π/4), a local region R119 (θ ~ 0), and a local region R120 ( θ to π/4) to the local region R121 (θ to π/2) in a substantially semicircular shape.

As shown in FIG. 2, the first electrode 210 is formed in a substantially circular shape when viewed as a whole, and has a mirror image symmetry with respect to a plane passing through the center and parallel to the yz plane. be. Therefore, each of the local regions L101 to L121 on the left half has mirror symmetry with respect to each of the local regions R101 to R121 on the right half with respect to the plane. Local region L121 and local region R121 are connected. Further description of the configuration of the left half of the first electrode 210 is omitted.
In each of the right and left halves of the first electrode 210, the meandering region S120, the first semi-annular region S121, the first connection region S111, the second semi-annular region S122, the second connection region S112, the third semi-circular A first semi-annular region S121, a second semi-annular region S122, and a third semi-annular region S123 extending with substantially the same width among the annular region S123, the third connection region S113, and the fourth semi-annular region S124. And the fourth semi-annular region S124 corresponds to the "strip", and the fourth semi-annular region S124, which exists on the outermost side among the strips S121 to S124, corresponds to the "outer strip".

The second electrode 220 is embedded in the substrate 100 in a posture parallel to the first main surface 101 of the substrate 100 and at a position farther from the first main surface 101 than the first electrode 210 . For convenience of explanation of the shape of the second electrode 220, as shown in FIG. The angle θ is 0 [rad], the azimuth θ in the upward direction (+y direction) is (1/2) π [rad], and the azimuth θ in the left direction (−x direction) is π [rad] or -π [rad]. ], and the azimuth angle θ in the downward direction (−y direction) is −(1/2)π [rad].

The right half of the second electrode 220 is roughly divided into a semi-circular area S220, a first connection area S211, a first semi-annular area S221, a second connection area S212 and a second semi-annular area S222.

The semicircular region S220 is a substantially semicircular region whose diameter is a substantially linear portion extending vertically slightly to the right of the center of the second electrode 220 . The semicircular region S220 is formed to have the same diameter or a larger diameter than the substantially circular first electrode 210 . A semicircular area is locally recessed to the right above the area slightly lower right of the center of the second electrode 220. This is a portion through which one of the first terminals 411 connected to the first electrode 210 penetrates ( It is a depression to avoid a vertical hole).

The first connection region S211 is a region extending linearly from the lower end local region (θ to -π/2) of the semicircular region S210 downward to the local region R202 (θ to -π/2). The first semi-annular region S221 extends from the local region R202 outside the semi-circular region S220 (and the outer edge of the first electrode 210) to a local region R203 (θ ~ -3π/8), a local region R204 (θ ~ −π/4), local region R205 (θ to −π/8), local region R206 (θ to 0), local region R207 (θ to π/8), local region R208 (θ to π/4) and local This region extends in a substantially semicircular shape through a region R209 (θ to 3π/8) to a local region R210 (θ to π/2).

The second connection region S212 is a region linearly extending upward from the local region R210 to the local region R211 (θ to π/2). The second semi-annular region S222 is formed outside the first semi-annular region S221 from the local region R211 to the local region R212 (θ~3π/8), the local region R213 (θ~π/4), the local region R214. (θ to π/8), local region R215 (θ to 0), local region R216 (θ to −π/8), local region R217 (θ to −π/4) and local region R218 (θ to −3π/ 8) to a local region R219 (θ to -π/2) in a substantially semicircular shape.

As shown in FIG. 3, the second electrode 220 is formed in a substantially circular shape when viewed as a whole, and has a mirror image symmetry with respect to a plane passing through the center and parallel to the yz plane. be. Therefore, each of the left half local regions L201 to L219 has mirror symmetry with respect to each of the right half local regions R201 to R219 with respect to the plane. Local region L219 and local region R219 are connected. Further description of the configuration of the left half of the second electrode 220 is omitted.
In each of the right half and the left half of the second electrode 220, approximately The first semi-annular region S221 and the second semi-annular region S222 extending with the same width correspond to the “strip”, and the second semi-annular region existing on the outermost side among the strips S221 to S222. S222 corresponds to the "outer strip".

Each of the pair of first terminals 411 and 412 is connected to the base 100 through a recess or vertical hole extending from the second main surface 102 toward the first main surface 101 to the first electrode 210, and through the local region R101 of the first electrode 210. and L101 are electrically connected to each other. Each of the pair of second terminals 421 and 422 passes through a concave portion or vertical hole extending from the second main surface 102 toward the first main surface 101 of the base 100 to the second electrode 220, and passes through the local region R201 of the second electrode 220. and L201 are electrically connected to each other.

(Electrode configuration (details))
The configurations of the first electrode 210 and the second electrode 220 will be described in more detail. Each of the first electrode 210 and the second electrode 220 is a mesh electrode produced by cutting a fabric in which a metal (eg, Mo) wire is used as warp and weft in a desired shape. The woven fabric is basically a plain weave, but may be a twill weave or a satin weave. Also, it is preferable that the warp and the weft have the same diameter.

Each of the fourth semi-annular region S124 (peripheral belt-shaped portion) in the first electrode 210 and the second semi-annular region S222 (peripheral belt-shaped portion) in the second electrode 220 corresponds to the respective end points of the plurality of warp yarns and the plurality of warp yarns. defined by respective end points of a plurality of weft yarns spaced apart from respective end points of the warp yarns, wherein the end points of each of said plurality of warp yarns defining said outer band do not include intersections with said weft yarns, and said outer End points of each of said plurality of weft yarns defining a strip do not include intersections with said warp yarns. The term "end point" means a point at which the warp or weft protrudes from the crossing point of the warp or weft by 1/2 or more of the diameter of the warp or weft. The term "intersection point" means a point where the warp or weft extends from the point where the warp or weft intersects with the warp or weft by 1/2 or less of the diameter of the warp or weft, respectively. For example, if the diameter of the warp and weft is 0.1 mm, the point that protrudes 0.05 mm from the point where the warp and weft intersect is the "end point", and the protruding point from the point where the warp and weft intersect. is 0.05 mm or less is the "point of intersection".
Specifically, the fourth semi-annular region S124 (peripheral strip portion) of the first electrode 210 and the second semi-annular region S222 (peripheral strip portion) of the second electrode 220 are alternately continuous. It is defined by a warp end point group and a weft end point group. A "warp end point group" is constituted by end points of one warp or end points of a plurality of adjacent warps aligned in the weft extending direction. A "weft end point group" is constituted by end points of one weft or end points of a plurality of adjacent wefts that are aligned in the warp extending direction.

FIG. 4 shows the arrangement pattern (microscopic cutting pattern) of the warp end points and the weft end points outside the local region R213 of the second semi-annular region S222 of the second electrode 220 . In the local region R213, the outer side of the second electrode 220, which is a mesh electrode, is a continuous first warp end point group P _Y11 (composed of warp end points _p101 and _p102 ), the first weft end point Group P _X11 (composed of weft end points p ₁₀₃ and p ₁₀₄ ), second warp end point group P _Y12 (composed of warp end points p ₁₀₅ and p ₁₀₆ ), second weft end point group P _X12 ( Weft end points _p107 and _p108 ), third warp end point group P _Y12 (composed of warp end points _p109 and _p110 ), third weft end point group P _X13 (weft end point _p111 and _p112 ), the fourth warp end point group P _Y14 (composed of warp end points _p113 and _p114 ) and the fourth weft end point group P _X14 (composed of weft end points _p115 and _p116 ). is defined by

A plurality of warp end points forming the same warp end point group are arranged in the weft extending direction. A plurality of weft end points forming the same weft end point group are arranged in the warp extending direction.

The arrangement pattern of the warp end points and the weft end points outside the local region R120 of the fourth semi-annular region S124 of the first electrode 210, which macroscopically extends in substantially the same direction as the local region R213, is also the same as in FIG. Local regions R103 of the first semi-annular region S121, the second semi-annular region S122, and the third semi-annular region S123 of the first electrode 210, which have substantially the same macroscopic extending direction as the local region R213, The arrangement pattern of warp end points and weft end points outside at least one region of R110 and R113 may be the same as in FIG. The arrangement pattern of the warp end points and the weft end points outside the local region R208 of the first semi-annular region S221 of the second electrode 220 may be the same as in FIG.

FIG. 5 shows the arrangement pattern (microscopic cutting pattern) of the warp end points and the weft end points outside the local region R214 of the second semi-annular region S222 of the second electrode 220 . In the local region R213, the outer side of the second electrode 220, which is a mesh electrode, is a continuous first warp end point group P _Y21 (composed of warp end points p ₂₀₁ and p ₂₀₂ aligned in the weft extending direction). ), the first weft end point group P _X21 (composed of weft end points p ₂₀₃ , p ₂₀₄ and p ₂₀₅ ), the second warp end point group P _{Y 22} (composed of warp end points p ₂₀₆ and p ₂₀₇ ), a second weft end point group P _X22 (consisting of weft end points p ₂₀₈ , p ₂₀₉ and p ₂₁₀ ), and a third warp end point group P _Y23 (consisting of warp end points p ₂₁₁ and p ₂₁₂ ). ) and a third weft end point group P _X23 (composed of weft end points p ₂₁₃ , p ₂₁₄ and p ₂₁₅ ).

A plurality of warp end points forming the same warp end point group are arranged in the weft extending direction. A plurality of weft end points forming the same weft end point group are arranged in the warp extending direction.

Arrangement of the warp end points and the weft end points outside the local region of the fourth semi-annular region S124 of the first electrode 210 (such as the intermediate local region between R119 and R120) having substantially the same macroscopic extending direction as the local region R214 The pattern is the same as in FIG. Of the local regions of the first semi-annular region S121, the second semi-annular region S122, and the third semi-annular region S123 of the first electrode 210, which have substantially the same macroscopic extending direction as the local region R214, The arrangement pattern of warp end points and weft end points outside at least one region may be the same as in FIG. The arrangement pattern of the warp end points and the weft end points outside the local region R207 of the first semi-annular region S221 of the second electrode 220 may be the same as in FIG.

The relationship between the arrangement pattern of the warp end points and the weft end points that define the local regions of the mesh electrodes or constitute the contour and the macroscopic extending direction of the contour will be described. , the 2N-1 end point group, and the 2N-th end point group (2≦N ) constructs the contour of the local region. It is assumed that warps and wefts have the same diameter, and that the spacing between warps (opening) and the spacing between wefts are the same.

The 2k-1 (k = 1, 2, ..., N) end point group is the warp end point group, the 2k-th end point group is the weft end point group, and the 2k-th end point group is the 2k-1th end point group The polarity of the 2k-1 th endpoint group is defined by positive (+) and negative (-), respectively, when present on the right and left sides of the endpoint group, respectively. The 2k-1 end point group is the weft end point group, the 2k-th end point group is the warp end point group, and the 2k-th end point group exists above and below the 2k-1 end point group. If so, the polarities of the 2k-1 th group of endpoints are defined by positive (+) and negative (-) respectively.

The absolute value of the bracketed number [n] indicates the number of warp end points forming the warp end point group, and the positive or negative indicates the polarity. Similarly, the absolute value of the number (m) in parentheses indicates the number of weft end points forming the weft end point group, and the positive or negative indicates the polarity. Also, the continuity of the endpoint group is indicated by an arrow (→).

According to this definition, the arrangement pattern of the warp end points and weft end points that constitute the contour of the local area is [n ₁ ]→(m ₁ )→[n ₂ ]→(m ₂ )→..[n _N ]→(m _N ) or ₍ m ₁ ) → [n ₁ ] → (m ₂ ) → [ _{n 2 ]} → . The azimuth angle φ representing the existing direction is approximately obtained according to the relational expression (1).

φ={Σ _k=1˜N arctan(m _k /n _k )}/N (1).

_For example, the arrangement pattern of warp end _points and _weft end points shown in FIG. ]→(−2)→[2]→(−2)→[2]→(−2)→[2]→(−2). Therefore, the extending direction of the macroscopic contour of the local area determined by the arrangement pattern with reference to the first group of warp end points P _Y11 is the azimuth angle φ=(arctan(−2/2)+arctan(−2/2) +arctan(-2/2)+arctan(-2/2))/4=-45°.

The arrangement _{pattern of} warp end points and _weft end points shown in FIG. (−3)→[2]→(−3)→[2]→(−3). Therefore, the extending direction of the macroscopic contour of the local area determined by the arrangement pattern with reference to the first warp end point group P _Y11 is azimuth angle φ=(arctan(−3/2)+arctan(−3/2) +arctan(-3/2))/3=-56.3°.

Using the warp diameter Δ _x1 and the weft diameter Δ _y1 , the distance between the warps (opening) Δ _x2 and the distance between the wefts Δ _y2 , the relational expression (1) is expressed by the relational expression (2). can be generalized to

φ={Σ _{k=1 to N} arctan(m _k (Δ _y1 +Δ _y2 )/n _k (Δ _x1 +Δ _x2 ))}/N (2).

In addition, the azimuth angle φ can be adjusted by adjusting the length of the distance between the warp end point and the nearest crossing point between the warp and the weft.

(Manufacturing method)
A first electrode 210 and a second electrode 220 are fabricated when fabricating the ceramic heater 1 having the above configuration. Specifically, the fabric with metal wires as warp and weft yarns, as described above, has a macroscopic contour (see FIGS. 2 and 3) and a microscopic contour (see FIG. 3) of the first electrode 210 and the second electrode 220, respectively. 4 and FIG. 5) are cut with a laser beam according to the laser cutting method so as to be constituted by mutually spaced warp and weft end points. As shown in FIGS. 4 and 5, a substantially stepped broken line C, which is a straight line segment bent at right angles at a plurality of points, represents the cutting pattern, and thus the trajectory pattern of the irradiation point of the laser beam. there is

Ceramic powder is filled in the internal space of the cylindrical member in a state in which a substantially cylindrical lower die (not shown) is inserted from below, and the ceramic powder is press-molded using the lower die and the upper die. A disk-shaped first compact is produced.

Furthermore, the first electrode 210 is placed on the upper surface of the first compact. Ceramic powder is filled inside the cylindrical member so as to cover the first electrode 210, and the ceramic powder is press-molded using a lower mold and an upper mold to form a substantially disc-shaped first electrode in which the first electrode 210 is embedded. 2 compacts are produced.

A second electrode 220 is placed on the upper surface of the second compact. Ceramic powder is filled inside the cylindrical member so as to cover the second electrode 220, and the ceramic powder is press-molded using a lower mold and an upper mold, thereby separating the first electrode 210 and the second electrode 220 in the press direction. A substantially disc-shaped third molded body is fabricated in a state of being pressed and embedded in a posture perpendicular to the pressing direction.

The third molded body is sintered according to the ceramics hot pressing method or the hot isostatic pressing method to densify the ceramics and obtain the prototype of the substrate 100 . Then, by grinding this prototype, while the electrode 4 is embedded in the base 100, the second main surface of the pair of main surfaces, which is closer to the second electrode 220 toward the other main surface, is ground. A pair of first vertical holes are machined to extend to local regions R101 and L101 of one electrode 210, respectively. Then, one end of each of the pair of first terminals 411 and 412 is inserted into each of the pair of first vertical holes and brazed to the first electrode 210 . Similarly, a pair of second vertical holes extending from the one main surface toward the other main surface to each of the local regions R201 and L201 of the second electrode 220 are formed by machining. Then, one end of each of the pair of second terminals 421 and 422 is inserted into each of the pair of second vertical holes and brazed to the second electrode 220 to complete the ceramic susceptor 1 .

(Example)

(Example 1)
A plain weave fabric was prepared in which the warp and weft were made of Mo wires having a diameter of φ0.1 mm and the opening of the warp and weft was 0.408 mm. A first electrode 210 (see FIG. 2) having a diameter of φ240 mm and a second electrode 220 (see FIG. 3) having a diameter of φ320 mm were produced by cutting the fabric according to a substantially stepped pattern. The cut pattern defines a mesh electrode with warp and weft end points spaced apart from each other as described above (see FIGS. 4 and 5). The width (dimension in the radial direction) of each of the first semi-annular region and the second semi-annular region of the second electrode 220 was designed to be 10 mm. A substrate 100 made of a substantially disk-shaped AlN sintered body having a diameter of 340 mm and a thickness of 25 mm is provided with first electrodes 210 and 16 mm at positions 12 mm and 16 mm from the first main surface 101 in the thickness direction of the substrate 100 . A ceramic susceptor of Example 1 in which each of the second electrodes 220 was embedded was produced.

(Example 2)
In Example 2 under the same conditions as in Example 1, except that the width (dimension in the radial direction) of each of the first semi-annular region and the second semi-annular region of the second electrode 220 was designed to be 6 mm. A ceramic susceptor was produced.

(Example 3)
In Example 3 under the same conditions as in Example 1, except that the width (dimension in the radial direction) of each of the first semi-annular region and the second semi-annular region of the second electrode 220 was designed to be 4 mm. A ceramic susceptor was produced.

(Example 4)
Conducted under the same conditions as in Example 2, except that the warp and weft were made of Mo wires with a diameter of φ0.05 mm, and the mesh electrode was made of a plain weave fabric with a warp and weft opening of 0.204 mm. A ceramic susceptor of Example 4 was produced.

(Comparative example)

(Comparative example 1)
A ceramic susceptor of Comparative Example 1 was produced under the same conditions as in Example 1, except that the first electrode 210 and the second electrode 220 were produced by cutting the curved fabric according to the curved pattern. was done.

(Comparative example 2)
A ceramic susceptor of Comparative Example 2 was produced under the same conditions as in Example 3, except that the first electrode 210 and the second electrode 220 were produced by cutting the curved fabric according to the curved pattern. was done.

(Evaluation method)
A ceramic susceptor of each example and each comparative example was grounded in a vacuum chamber, and a negative pressure (10 Pa to 5000 Pa) was formed in the vacuum chamber. In this state, the temperature of the first main surface 101 of the substrate 100 constituting the ceramic susceptor was measured using an IR camera (temperature image sensor). The power supplied to each of the first electrode 210 and the second electrode 220 was adjusted so that the average temperature of the first main surface 101 of the substrate 100 was 500.degree. At this time, the maximum temperature difference in the left and right second semi-annular regions of the second electrode 220 was evaluated using the image captured by the IR camera.

Table 1 shows the evaluation results together with the feature values of the mesh electrodes of the ceramic susceptors of each example and each comparative example.

From Table 1, according to the ceramic susceptors of Examples 1 to 4, compared with the ceramic susceptors of Comparative Examples 1 and 2, at least in the region corresponding to the second semi-annular region of the second electrode 220, the first It can be seen that the uniformity of the temperature distribution of the main surface 101 is high. In Comparative Examples 1 and 2, particularly in the second semicircular region of the second electrode 220, not only are the warp end points and weft end points spaced apart from each other, but also the warp end points and weft end points are irregularly present. This is because the contact points are defined by the contact points, and the presence of the contact points causes variations in the electrical characteristics.

(function)
FIG. 6A shows measurement results of electrical resistance values between adjacent local regions for each of 10 samples having the same configuration as the first electrode 210 constituting the ceramic susceptor of Example 1. . FIG. 6B shows the measurement results of the electrical resistance values between adjacent local regions for each of five samples having the same configuration as the first electrode 210 constituting the ceramic susceptor of Comparative Example 1. . In FIGS. 6A and 6B, “s−s+1” (s=1, 2, 3, . . . , 20) is the electrical resistance value ( mean values) are shown.

FIG. 7A shows the measurement results of the electrical resistance values between adjacent local regions for each of 10 samples having the same configuration as the second electrode 220 constituting the ceramic susceptor of Example 1. . FIG. 7B shows the measurement results of the electrical resistance values between adjacent local regions for each of five samples having the same configuration as the second electrode 220 constituting the ceramic susceptor of Comparative Example 1. . In FIGS. 7A and 7B, “t−t+1” (t=1, 2, 3, . . . , 18) is the electrical resistance value ( mean values) are shown.

A comparison of FIGS. 6A and 6B reveals that the variation in the distribution of the electrical resistance values between the samples of the first electrode 210 according to Example 1 is the same as the electrical resistance value between the samples of the first electrode 210 according to Comparative Example 1. It can be seen that it is slightly smaller than the variation in the distribution mode of . On the other hand, a comparison of FIGS. 7A and 7B reveals variations in the distribution of electrical resistance values between samples of the second electrode 220 according to Example 1 (in particular, 12-13, 13-14, 16-17 and 17 It can be seen that the variation in the electrical resistance value between local regions represented by -18) is significantly smaller than the variation in the distribution of the electrical resistance value between the samples of the second electrode 220 according to Comparative Example 1. This is because in Comparative Example 1, in particular, in the second semi-annular region of the second electrode 220, not only are the warp end points and weft end points spaced apart from each other, but also the warp end points and the weft end points are in irregular contact. This is because the contact points are defined by points, and the presence of the contact points causes variations in electrical characteristics.

(Another embodiment of the present invention)
In the above-described embodiment, the mesh electrode is manufactured such that the plurality of warp end points forming the common warp end point group are aligned in the weft direction, and the plurality of weft end points forming the common weft end point group are aligned in the warp direction. . As another embodiment, a plurality of warp end points forming a common warp end point group may be arranged in a direction different from the weft direction (for example, a direction slightly inclined with respect to the weft direction), and the common weft end point group may be aligned in a direction different from the warp direction (for example, a direction slightly inclined with respect to the warp direction).

While the above embodiment has two separate mesh electrodes 210 and 220 embedded in the substrate 100, other embodiments may have a single mesh electrode or multiple mesh electrodes of three or more embedded in the substrate. good.

In the above embodiment, each of the first electrode 210 and the second electrode 220 is a mesh electrode, but in another embodiment, one of the first electrode 210 and the second electrode 220 is a mesh electrode, and the other is a mesh electrode. The electrodes may be composed of thin metal plates or punching metals formed in a predetermined shape.

100... Base 101... First main surface 102... Second main surface 210... First electrode (mesh electrode) 220... Second electrode (mesh electrode) 411, 412... First terminal 421, 422... Second terminal C... Cutting pattern _p101 , _p102 , _p105 , p106, _p109 , _p110 , _p113 , _p114 ... Warp end points _p103 , _p104 , _p107 , _{p108 , p111} , p ₁₁₂ , p ₁₁₅ , p ₁₁₆ ‥ weft end point p ₂₀₁ , p ₂₀₂ , p ₂₀₆ , p ₂₀₇ , p ₂₁₁ , p ₂₁₂ ‥ warp end point p ₂₀₃ , p ₂₀₄ , p ₂₀₅ , p ₂₀₈ , p ₂₀₉ , p ₂₁₀ , _p213 , _p214 , _p215 -- weft end points.

Claims (3)

An electrode-embedded member for a semiconductor manufacturing apparatus , comprising: a substrate; and a mesh electrode composed of a fabric of a plurality of conductive warps and a plurality of wefts embedded in the substrate,
The mesh electrode includes at least one or more belt-like portions, and of the belt-like portions, the outer belt-like portion positioned closest to the outer periphery is positioned from the end point of each of the plurality of warp yarns and the end point of each of the plurality of warp yarns. defined by the end points of each of the plurality of weft yarns that are spaced apart, wherein the end points of each of the plurality of warp yarns that define the outer band do not include intersections with the weft yarns and define the outer band An electrode-embedded member for a semiconductor manufacturing apparatus, wherein each end point of the plurality of wefts does not include an intersection point with the warp. In the electrode-embedded member for semiconductor manufacturing equipment according to claim 1,
wherein the outer belt-shaped portion is defined by a group of warp end points and a group of weft end points that are continuous while alternating;
The warp end point group is composed of the end points of a plurality of adjacent warps aligned in the weft extending direction or the end points of one of the warps, and the weft end point group is composed of the warp of the plurality of adjacent wefts. An electrode-embedded member for a semiconductor manufacturing apparatus, characterized in that the electrode-embedded member is constituted by the end points arranged in the extending direction of the weft yarn or the end points of one of the weft yarns. 3. The method of manufacturing an electrode-embedded member for a semiconductor manufacturing apparatus according to claim 1, further comprising a cutting step of defining the outer band-shaped portion by laser cutting, wherein the laser cutting is applied to the warp or the weft. A method of manufacturing an electrode-embedded member for a semiconductor manufacturing apparatus, characterized by being operated stepwise in a parallel direction.

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