JP7249725B2 - Surface treated cerium oxide powder and polishing composition - Google Patents
Surface treated cerium oxide powder and polishing composition Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
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Description
本発明は、表面処理された酸化セリウム粉末及び研磨組成物に関する。 The present invention relates to surface-treated cerium oxide powders and polishing compositions.
半導体素子の高集積化に伴い、フォトリソグラフィーマージンを確保し且つ配線の長さを最小化するために、下部膜の平坦化技術が要求される。下部膜を平坦化するための方法として、ＢＰＳＧ（ＢｏｒｏＰｈｏｓｐｈｏｒｕｓ Ｓｉｌｉｃａｔｅ Ｇｌａｓｓ）リフロー、ＳＯＧ（Ｓｐｉｎ Ｏｎ Ｇｌａｓｓ）エッチバック（ｅｔｃｈ ｂａｃｋ）、化学機械研磨（Ｃｈｅｍｉｃａｌ Ｍｅｃｈａｎｉｃａｌ Ｐｏｌｉｓｈｉｎｇ、以下「ＣＭＰ」という）工程などがある。ＣＭＰ工程は、リフロー工程やエッチバック工程で達成できない広い空間領域の平坦化及び低温平坦化を達成することができるので、次世代の半導体素子で有力な平坦化技術として台頭している。 As semiconductor devices become more highly integrated, planarization techniques for lower layers are required in order to secure a photolithographic margin and minimize the length of interconnections. Methods for planarizing the lower layer include BPSG (BoroPhosphorus Silicate Glass) reflow, SOG (Spin On Glass) etch back, chemical mechanical polishing (CMP), and the like. . The CMP process is emerging as a promising planarization technique for next-generation semiconductor devices because it can achieve planarization of a wide spatial region and low-temperature planarization that cannot be achieved by the reflow process or the etch-back process.
しかし、配線抵抗を低減するために配線の厚さを増加させるにつれて、金属間の電気的絶縁のための金属間絶縁層（ＩｎｔｅｒＭｅｔａｌ Ｄｉｅｌｅｃｔｒｉｃ ｌａｙｅｒ、以下「ＩＭＤ」という）のデポ量も相対的に増加することにより、ＣＭＰ段階で平坦化させるための絶対除去量が大幅に増加している。
ところが、従来のＣＭＰ用スラリーは、除去速度が遅いため、ＣＭＰ時間が非常に長くなることにより、工程生産性に劣るという問題点がある。
However, as the thickness of the wiring increases to reduce the wiring resistance, the deposition amount of an intermetal dielectric layer (IMD) for electrical insulation between metals also increases. By doing so, the absolute removal amount for planarization in the CMP step is greatly increased.
However, since the conventional CMP slurry has a slow removal rate, the CMP time is very long, resulting in poor process productivity.
本発明は、研磨速度に非常に優れた、表面処理された酸化セリウム粉末及びこれを含む研磨組成物を提供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a surface-treated cerium oxide powder and a polishing composition containing the same, which have excellent polishing speed.
上記の課題を解決するための手段として、
本発明は、有機物で表面処理された酸化セリウム粉末であって、Ｘ線光電子分光（ＸＰＳ）測定時のＯ－Ｃピーク面積がＯ－Ｃｅピーク面積よりもさらに大きい酸化セリウム粉末を提供する。特に、Ｏ－Ｃピーク面積がＯ－Ｃｅピーク面積に対して１．１倍乃至４．０倍の範囲内である酸化セリウム粉末を提供する。
As a means to solve the above problems,
The present invention provides a cerium oxide powder surface-treated with an organic substance, which has an OC peak area larger than an O-Ce peak area when measured by X-ray photoelectron spectroscopy (XPS). In particular, a cerium oxide powder is provided in which the O--C peak area is in the range of 1.1 to 4.0 times the O--Ce peak area.
また、本発明は、有機物で表面処理された酸化セリウム粉末であって、アルゴンイオンで２ＫｅＶ、３００ｓの条件にて表面エッチングした後、ＸＰＳ測定時のＯ－Ｃｅピーク面積がＯ－Ｃピーク面積よりもさらに大きい酸化セリウム粉末を提供する。特に、ＯＣのピーク面積がＯ－Ｃｅピーク面積に対して０．１０倍乃至０．４０倍の範囲内である酸化セリウム粉末を提供する。 The present invention also provides a cerium oxide powder surface-treated with an organic substance, which is surface-etched with argon ions under conditions of 2 KeV and 300 s. also provide larger cerium oxide powders. In particular, a cerium oxide powder is provided in which the OC peak area is in the range of 0.10 to 0.40 times the O—Ce peak area.
また、本発明は、有機物で表面処理された酸化セリウム粉末において、次の数式を満足する酸化セリウム粉末を提供する。 In addition, the present invention provides a cerium oxide powder surface-treated with an organic substance that satisfies the following formula.
４．０≦Ａ／Ｂ≦４０
Ａ：表面測定条件でのＸＰＳ測定時のＯ－Ｃピーク面積／Ｏ－Ｃｅピーク面積
Ｂ：エッチング測定条件でのＸＰＳ測定時のＯ－Ｃピーク面積／Ｏ－Ｃｅピーク面積
4.0≤A/B≤40
A: OC peak area/O—Ce peak area during XPS measurement under surface measurement conditions B: OC peak area/O—Ce peak area during XPS measurement under etching measurement conditions
特に、次の数式を満足する酸化セリウム粉末を提供する。 In particular, a cerium oxide powder that satisfies the following formula is provided.
１０．０≦Ａ／Ｂ≦３５．０ 10.0≤A/B≤35.0
前記有機物は、酢酸、ギ酸、ピバル酸、プロピオン酸、４－ヒドロキシフェニル酢酸を含むカルボン酸、パルミチン酸、ステアリン酸、オレイン酸、アラキドン酸、リノール酸、リノレン酸を含む炭素数８～２０の飽和または不飽和脂肪酸の中から選択でき、前記酸化セリウム粉末は、研磨剤の用途に使用できる。 The organic substance is a carboxylic acid including acetic acid, formic acid, pivalic acid, propionic acid, 4-hydroxyphenylacetic acid, palmitic acid, stearic acid, oleic acid, arachidonic acid, linoleic acid, and linolenic acid. or unsaturated fatty acids, and the cerium oxide powder can be used as an abrasive.
また、本発明は、研磨剤及び溶剤を含む研磨組成物であって、前記研磨剤は、前記酸化セリウム粉末を含む研磨組成物を提供する。 The present invention also provides a polishing composition comprising an abrasive and a solvent, wherein the abrasive comprises the cerium oxide powder.
上述した構成的特徴を有する本発明は、研磨速度に非常に優れた、表面処理された酸化セリウム粉末及びこれを含む研磨組成物を提供することができる。 INDUSTRIAL APPLICABILITY The present invention having the above structural features can provide a surface-treated cerium oxide powder having a very high polishing rate and a polishing composition containing the same.
以下、実施例によって本発明をより詳細に説明する。下記の説明は、本発明の具体的な一例についてのものであるので、たとえ断定的、限定的な表現があっても、特許請求の範囲から定められる権利範囲を限定するものではない。 The present invention will be described in more detail below by way of examples. The following description is of a specific example of the present invention, and therefore any categorical, limiting statements should not limit the scope of rights defined by the claims.
本発明による一実施例は、有機物で表面処理された酸化セリウム粉末であって、Ｘ線光電子分光（ＸＰＳ）測定時のＯ－Ｃピーク面積がＯ－Ｃｅピーク面積よりもさらに大きい酸化セリウム粉末を提供する。特に、Ｏ－Ｃピーク面積がＯ－Ｃｅピーク面積に対して１．１倍乃至４．０倍の範囲内である酸化セリウム粉末を提供する。 An embodiment according to the present invention is a cerium oxide powder surface-treated with an organic substance, wherein the OC peak area when measured by X-ray photoelectron spectroscopy (XPS) is larger than the O-Ce peak area. offer. In particular, a cerium oxide powder is provided in which the O--C peak area is in the range of 1.1 to 4.0 times the O--Ce peak area.
本発明に係る別の一実施例は、有機物で表面処理された酸化セリウム粉末であって、２ＫｅＶ、３００ｓの条件で表面エッチングした後、ＸＰＳ測定時のＯ－Ｃｅピーク面積がＯ－Ｃピーク面積よりもさらに大きい酸化セリウム粉末を提供する。特に、Ｏ－Ｃピーク面積がＯ－Ｃｅピーク面積に対して０．１０倍乃至０．４０倍の範囲内である酸化セリウム粉末を提供する。 Another embodiment according to the present invention is a cerium oxide powder surface-treated with an organic substance, and after surface etching under conditions of 2 KeV and 300 s, the O—Ce peak area during XPS measurement is To provide a cerium oxide powder that is even larger than In particular, a cerium oxide powder is provided in which the O--C peak area is in the range of 0.10 to 0.40 times the O--Ce peak area.
本発明に係る別の一実施例は、有機物で表面処理された酸化セリウム粉末であって、次の数式を満足する酸化セリウム粉末を提供する。 Another embodiment of the present invention provides a cerium oxide powder surface-treated with an organic material, wherein the cerium oxide powder satisfies the following formula.
４．０≦Ａ／Ｂ≦４０
Ａ：表面測定条件でのＸＰＳ測定時のＯ－Ｃピーク面積／Ｏ－Ｃｅピーク面積
Ｂ：エッチング測定条件でのＸＰＳ測定時のＯ－Ｃピーク面積／Ｏ－Ｃｅピーク面積
4.0≤A/B≤40
A: OC peak area/O—Ce peak area during XPS measurement under surface measurement conditions B: OC peak area/O—Ce peak area during XPS measurement under etching measurement conditions
特に、次の数式を満足する酸化セリウム粉末を提供する。 In particular, a cerium oxide powder that satisfies the following formula is provided.
１０．０≦Ａ／Ｂ≦３５．０ 10.0≤A/B≤35.0
本発明者は、酸化セリウム粉末の表面処理が研磨速度に関連することを確認した。特に、どのように表面処理が施されたかによって、研磨速度性能に大きな影響を及ぼし、ＸＰＳ測定時に上記の範囲を満足すればこそ研磨速度が著しく向上することを見出し、後述する実施例から分かるように、上記の範囲内で研磨速度に非常に優れることを確認した。 The inventors have confirmed that the surface treatment of the cerium oxide powder is related to the polishing rate. In particular, it was found that the polishing rate performance is significantly affected by how the surface treatment is performed, and that the polishing rate is significantly improved only when the above range is satisfied during XPS measurement. As can be seen from the examples described later. In addition, it was confirmed that the polishing rate was very excellent within the above range.
上記の範囲を満足する酸化セリウム粉末と研磨組成物の製造方法は、制限されず、様々な方法で製造できる。酸化セリウム粉末は、湿式酸化法、ゾルゲル（Ｓｏｌ Ｇｅｌ）法、水熱合成法、か焼法などを使用することができ、後述する実施例で望ましい方法を提示する。つまり、セリウム前駆体と塩基性物質とを混合してセリウム前駆体を酸化させて酸化セリウムを得ることができる。その後、洗浄及び乾燥を行い、粉砕した後、熱処理して有機物で表面処理した後、水で希釈して酸化セリウム粉末を含む研磨組成物を得ることができる。本発明の一実施例に係る酸化セリウム粉末を得るために、有機物の種類や有機物の含有量などが重要な因子として作用できるが、実施例を介して具体的に例示している。セリウム前駆体としては、特に制限されず、好ましくは塩の形態であり得る。その非制限的な例としては硝酸セリウム（ｃｅｒｉｕｍ ｎｉｔｒａｔｅ）、酢酸セリウム（ｃｅｒｉｕｍ ａｃｅｔａｔｅ）、これらの水和物などがあり、これらは単独で或いは２種以上組み合わせて使用できる。 The method for producing the cerium oxide powder and the polishing composition satisfying the above range is not limited and can be produced by various methods. A wet oxidation method, a sol-gel method, a hydrothermal synthesis method, a calcination method, etc., can be used to prepare the cerium oxide powder, and preferred methods will be presented in Examples below. That is, cerium oxide can be obtained by mixing a cerium precursor and a basic substance and oxidizing the cerium precursor. Then, it is washed and dried, pulverized, heat-treated, surface-treated with an organic material, and diluted with water to obtain a polishing composition containing cerium oxide powder. In order to obtain the cerium oxide powder according to an embodiment of the present invention, the type of organic matter, the content of the organic matter, etc. may act as important factors, which are illustrated in detail through examples. The cerium precursor is not particularly limited, and may preferably be in the form of a salt. Non-limiting examples thereof include cerium nitrate, cerium acetate, hydrates thereof, and the like, which can be used alone or in combination of two or more.
酸化セリウム粉末を表面処理するために使用する有機物は、制限されないが、酢酸、ギ酸、ピバル酸、プロピオン酸、４－ヒドロキシフェニル酢酸などのカルボン酸、パルミチン酸、ステアリン酸、オレイン酸、アラキドン酸、リノール酸、リノレン酸などの炭素数８～２０の飽和または不飽和脂肪酸などを挙げることができる。表面処理方法としては、粉末を別個の分散機を用いて表面処理剤でコーティングする方法があり、この他にも、表面処理は、水に酸化セリウム粉末と表面処理剤を仕込んで撹拌することにより研磨組成物を製造する過程において行われてもよいが、これに限定されない。 Organic substances used for surface treatment of cerium oxide powder include, but are not limited to, acetic acid, formic acid, pivalic acid, propionic acid, carboxylic acids such as 4-hydroxyphenylacetic acid, palmitic acid, stearic acid, oleic acid, arachidonic acid, Examples include saturated or unsaturated fatty acids having 8 to 20 carbon atoms such as linoleic acid and linolenic acid. As a surface treatment method, there is a method in which the powder is coated with a surface treatment agent using a separate disperser. In addition, the surface treatment is performed by adding cerium oxide powder and a surface treatment agent to water and stirring. It may be performed in the process of manufacturing the polishing composition, but is not limited to this.
酸化セリウム粉末を含む研磨組成物は、溶剤として、水を使用してもよく、有機溶剤を一部混合して使用してもよい。この他にも、多様な添加剤、例えば、分散剤、欠陥抑制剤、酸化剤、研磨促進剤、ｐＨ調整剤などが含まれ得る。
以下、実施例についてより詳細に説明する。
The polishing composition containing the cerium oxide powder may use water as a solvent, or may be partially mixed with an organic solvent. In addition, various additives such as dispersants, defect inhibitors, oxidizing agents, polishing accelerators, pH adjusters, etc. may be included.
Examples will be described in more detail below.
＜実施例１＞
硝酸セリウム水和物（Ｃｅ（ＮＯ３）３・６Ｈ２Ｏ）２．５ｋｇを水３．５ｋｇに溶解した後、１時間撹拌して前駆体溶液を製造した。アンモニア水３．２ｋｇを０．４ｋｇ／ｍｉｎの流量で前駆体溶液に投入し、前駆体溶液は攪拌した。アンモニア水の投入が完了した後、８０℃に昇温し、圧力を２ｂａｒに昇圧して攪拌しながら１２時間反応させた。得られた酸化セリウムをフィルタープレスで濾過、洗浄し、２００℃で１２時間乾燥させた後、粉砕し、ベルト炉にて９００℃で９０分間熱処理を行った。その後、酢酸を酸化セリウム粉末に対して１重量％添加して分散機で分散させて表面処理し、０．３μｍのノミナル（ｎｏｍｉｎａｌ）フィルターで濾過し、希釈して酸化セリウムスラリーを製造した。
粉末の表面処理特性を分析するために、次の条件でＸ線光電子分光（ＸＰＳ）を行って粉末の表面を測定し、その結果を表２に示した。
<Example 1>
2.5 kg of cerium nitrate hydrate (Ce(NO 3 ) 3.6H 2 O) was dissolved in 3.5 kg of water and stirred for 1 hour to prepare a precursor solution. 3.2 kg of aqueous ammonia was added to the precursor solution at a flow rate of 0.4 kg/min, and the precursor solution was stirred. After the addition of aqueous ammonia was completed, the temperature was raised to 80° C., the pressure was raised to 2 bar, and the reaction was carried out for 12 hours while stirring. The obtained cerium oxide was filtered with a filter press, washed, dried at 200° C. for 12 hours, pulverized, and heat-treated at 900° C. for 90 minutes in a belt furnace. After that, 1 % by weight of acetic acid was added to the cerium oxide powder, dispersed in a disperser, surface-treated, filtered through a 0.3 μm nominal filter, and diluted to prepare a cerium oxide slurry.
In order to analyze the surface treatment properties of the powder, X-ray photoelectron spectroscopy (XPS) was performed under the following conditions to measure the surface of the powder, and the results are shown in Table 2.
＜測定条件＞
１．ＸＰＳ装備名／メーカー：Ｋ－Ａｌｐｈａ＋／ＴｈｅｒｍｏＦｉｓｈｅｒ Ｓｃｉｅｎｔｉｆｉｃ製
<Measurement conditions>
1. XPS equipment name/manufacturer: K-Alpha+/ThermoFisher Scientific
２．測定条件
１）Ｘ線源：Ｍｏｎｏｃｈｒｏｍａｔｅｄ Ａｌ Ｘ－Ｒａｙ ｓｏｕｒｃｅｓ（Ａｌ Ｋα ｌｉｎｅ：１４８６．６ｅＶ）
２）Ｘ線電源：１２ｋＶ、１０ｍＡ
３）サンプリングエリア：４００μｍ（直径）
４）ナロースキャン：パスエネルギー（ｐａｓｓ ｅｎｅｒｇｙ）４０ｅＶ、ステップサイズ０．０５ｅＶ
５）真空：３ｘ１０－９ｍｂａｒ
６）キャリブレーション：Ｎｏ
７）フラッドガンは電荷補償に使用される(Flood gun is used for charge compensation)：ＯＮ
2. Measurement conditions 1) X-ray source: Monochromated Al X-Ray sources (Al Kα line: 1486.6 eV)
2) X-ray power supply: 12kV, 10mA
3) Sampling area: 400 μm (diameter)
4) Narrow scan: pass energy 40 eV, step size 0.05 eV
5) Vacuum: 3x10-9mbar
6) Calibration: No
7) Flood gun is used for charge compensation: ON
また、粉末表面の一部を下記の条件でエッチングし、上記の条件でＸＰＳを行い、その結果を表２に示した。 Also, part of the powder surface was etched under the following conditions, and XPS was performed under the above conditions.
＜エッチング条件＞
Ａｒイオンエッチング：２ｋｅＶ、６００ｓｅｃ、ラスターサイズ２ｘ２ｍｍ
また、酸化セリウムスラリーの研磨テストのために、下記の条件でテストし、その結果を表２に示した。
<Etching conditions>
Ar ion etching: 2 keV, 600 sec, raster size 2 x 2 mm
Also, for the polishing test of the cerium oxide slurry, tests were conducted under the following conditions, and the results are shown in Table 2.
研磨テスト：ＣＭＰ装備（モデル名：斗山ＵＮＩＰＬＡ２３１）
パッド：ＩＣ１０００ＴＭ Ａ２ ＰＡＤ ２０‘＊１．１８’ ＡＣＡＯ：１Ｙ１０
時間：６０秒
スピンドル速度：８５ｒｐｍ
ウエハー圧力：５ｐｓｉ
スラリーフローレート：２００ｃｃ／ｍｉｎ
ウエハー：８ｉｎｃｈ（ＰＥＴＥＯＳ）
ウエハー厚さ：１２０００Å
Polishing test: CMP equipment (model name: Doosan UNIPLA231)
Pad: IC1000TM A2 PAD 20'*1.18' ACAO: 1Y10
Time: 60 seconds Spindle speed: 85 rpm
Wafer pressure: 5 psi
Slurry flow rate: 200cc/min
Wafer: 8 inch (PETEOS)
Wafer thickness: 12000 Å
＜実施例２＞乃至＜実施例５＞
実施例１において下記表１に提示した条件以外は実施例１と同様にして行った。
<Example 2> to <Example 5>
Example 1 was carried out in the same manner as in Example 1 except for the conditions shown in Table 1 below.
＜比較例１＞乃至＜比較例３＞
実施例１において下記表１に提示した条件以外は実施例１と同様にして行った。
<Comparative Example 1> to <Comparative Example 3>
Example 1 was carried out in the same manner as in Example 1 except for the conditions shown in Table 1 below.
表２より、Ａ／Ｂの値が高い場合には、研磨速度（ＲＲ）値が高いが、比較例２のようにＡ／Ｂの値が過度に高い場合には、むしろＲＲ値が低いことが分かった。このようにＡ／Ｂの値が研磨速度性能と深く関連していることを確認することができる。 From Table 2, when the A/B value is high, the polishing rate (RR) value is high, but when the A/B value is excessively high as in Comparative Example 2, the RR value is rather low. I found out. Thus, it can be confirmed that the value of A/B is closely related to the polishing speed performance.
また、Ａの値は１よりも高く、Ｂの値は１よりも低い場合には、ＲＲ値が高いことが分かった。 It was also found that when the value of A is higher than 1 and the value of B is lower than 1, the RR value is high.
また、Ｏ－Ｃピーク面積がＯ－Ｃｅピーク面積に対して１．１倍乃至４．０倍の範囲内である場合には研磨速度に優れており、Ｏ－Ｃピーク面積がＯ－Ｃｅピーク面積に対して０．１０倍乃至０．４０倍の範囲内である場合には研磨速度に優れていることを確認することができる。 Further, when the OC peak area is in the range of 1.1 to 4.0 times the O—Ce peak area, the polishing rate is excellent, and the OC peak area is the O—Ce peak. It can be confirmed that the polishing rate is excellent when it is within the range of 0.10 to 0.40 times the area.
Claims (3)
下記の測定値の比率が１０．０≦Ａ／Ｂ≦３５．０
である粉末。
Ａ：表面測定条件でのＸＰＳ測定時のＯ－Ｃピーク面積／Ｏ－Ｃｅピーク面積
Ｂ：エッチング測定条件でのＸＰＳ測定時のＯ－Ｃピーク面積／Ｏ－Ｃｅピーク面積 surface-treated with an organic material selected from one or more saturated or unsaturated carboxylic acids selected from acetic acid, formic acid, pivalic acid, propionic acid, palmitic acid, stearic acid, oleic acid, arachidonic acid, linoleic acid, and linolenic acid A cerium oxide powder,
The ratio of the following measured values is 10.0 ≤ A/B ≤ 35.0
A powder that is
A: OC peak area/O—Ce peak area during XPS measurement under surface measurement conditions B: OC peak area/O—Ce peak area during XPS measurement under etching measurement conditions
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| JP2007051057A (en) | 2005-08-12 | 2007-03-01 | Degussa Ag | Cerium oxide powder and cerium oxide dispersion liquid |
| JP2012146974A (en) | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | Polishing solution and substrate polishing method using polishing solution |
| CN104178033A (en) | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | Nano cerium oxide polishing liquid composition |
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| US6332835B1 (en) * | 1997-11-20 | 2001-12-25 | Canon Kabushiki Kaisha | Polishing apparatus with transfer arm for moving polished object without drying it |
| US8877207B2 (en) * | 2010-09-17 | 2014-11-04 | University Of Central Florida Research Foundation, Inc. | Nanoparticles of cerium oxide targeted to an amyloid-beta antigen of Alzheimer's disease and associated methods |
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| CN104178033A (en) | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | Nano cerium oxide polishing liquid composition |
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