JP7229135B2 - electronic device - Google Patents

Description

The present disclosure relates to electronic devices in which a space is located between a substrate and a chip.

For example, Patent Document 1 (surface acoustic wave device) is known as an electronic device using an acoustic wave chip. The surface acoustic wave device disclosed in Patent Document 1 includes a circuit wiring board, a surface acoustic wave element mounted on the circuit wiring board, and a seal that surrounds the outer peripheral surface of the surface acoustic wave element and is joined to the circuit wiring board. and a stopping resin. A space is located between the circuit wiring board and the surface acoustic wave element.

JP 2017-175427 A

The provision of durable electronic devices is awaited.

An electronic device according to an aspect of the present disclosure includes a substrate having a first surface and first pads located on the first surface;
a joining member joined to the first surface and having a first opening surrounding the first pad;
a first chip facing the first surface through the first opening and connected to the first pad;
a sealing portion that covers the outer peripheral surface of the first chip and is bonded to the base via the bonding member;
has
The glass transition temperature of the bonding member is higher than the glass transition temperature of the sealing portion.

According to the above configuration, it is possible to provide a durable electronic device.

1 is a perspective view of a base structure according to embodiments; FIG. FIG. 2 is a cross-sectional view taken along line II-II of the base structure shown in FIG. 1; 3 is an enlarged view of III shown in FIG. 2; FIG. 3 is a perspective view of a first chip or a second chip shown in FIG. 2; FIG. FIG. 5A is a diagram for explaining a process of forming first and second bumps on a base structure and mounting a mounted body on the base structure, and FIG. 5B is a process of mounting a mounted body on the base structure. FIG. 5C is an enlarged view of Vc of FIG. 5B. 6A is a diagram showing the periphery of a first chip in the first modification of the electronic device shown in FIG. 2, and FIG. 6B is a diagram showing the first chip in the second modification of the electronic device shown in FIG. It is the figure which showed the periphery. 3 shows a third modification of the electronic device shown in FIG. 2; FIG.

Embodiments of the present disclosure will be described below with reference to the accompanying drawings. 1, Fr indicates front, Rr indicates rear, Le indicates left, Ri indicates right, Up indicates upper, and Dn indicates lower. It should be noted that each drawing to be referred to is shown schematically, and details may be omitted.

[Embodiment]
(electronic device)
Please refer to FIG. The electronic device 1 has, for example, a plurality of external terminals 23A to 23F (details will be described later) that are connected to an external device. By connecting these external terminals 23A to 23F to an external device, the electronic device 1 is mounted on the external device. The electronic device 1 shown in FIG. 1 has a base structure 10 and a mounting body 2 mounted on the base structure 10 .

(Base structure)
The base structure 10 has, for example, a flat plate shape. The base structure 10 having a flat plate shape may have, for example, a rectangular shape, a circular shape, or an elliptical shape when viewed in the thickness direction. Furthermore, the base structure 10 may be larger than the mounting body 2 , smaller than the mounting body 2 , or the same size as the mounting body 2 . The thickness of the base structure 10 may be, for example, 70 μm or more, 200 μm or more, 400 μm or more, or 700 μm or more. The size and shape of the base structure 10 are arbitrary.

Please refer to FIGS. For example, the base structure 10 has a base 20 and a joining member 30 joined to the base 20 .

(substrate)
The substrate 20 shown in FIG. 2 is a multi-layer board having three or more conductor layers. However, in other embodiments, the substrate 20 may be a double-sided board having a total of two conductor layers only on the upper surface and the lower surface, or may be a single layer substrate having a conductor layer only on the upper surface. The substrate 20 of the multilayer board will be described below.

The base 20 is, for example, a substrate having a flat plate shape. The base 20 , for example, occupies most (eg, 80% or more) of the base structure 10 . As one aspect, the size and shape of the substrate 20 can refer to the size and shape of the substrate structure 10 . However, the base 20 may occupy 80% or less of the base structure 10, for example.

The coefficient of linear expansion of the substrate 20 can be set arbitrarily. For example, the coefficient of linear expansion of the substrate 20 may be 4-12 ppm/K or 5-10 ppm/K. For example, the linear expansion coefficient of the substrate 20 in the horizontal direction (front, rear, left, and right) may be 4 to 8 ppm/K, and the linear expansion coefficient of the substrate 20 in the vertical direction may be 6 to 12 ppm/K. That is, the coefficient of linear expansion of the substrate 20 may differ between the horizontal direction and the vertical direction. The linear expansion coefficient of the substrate 20 can be obtained, for example, by changing the temperature of the substrate 20 according to a program and measuring the dimensional change of the substrate 20 while applying integral pressure to the substrate 20 in the process. Thermal mechanical analysis (TMA method) can be used as one of such measurement methods.

The glass transition temperature of the substrate 20 may be, for example, 270° C. or lower, 260° C. or lower, 250° C. or lower, or 240° C. or lower. As one aspect, the glass transition temperature of the substrate 20 may be set within the range of 240 to 270.degree. The substrate 20 material is optional. For example, the material of the substrate 20 may be selected so that the glass transition temperature is a predetermined value. The glass transition temperature of the substrate 20 can be obtained, for example, by thermomechanical analysis (TMA method) in which the temperature of the substrate 20 is changed according to a program and changes in physical properties are measured. The same method may be used to measure the glass transition temperature of the joint member 30 and the sealing portion 60, which will be described later.

The Young's modulus of the substrate 20 is arbitrary. For example, the Young's modulus of the substrate 20 may be 12 to 40 GPa, or may be 15 to 33 GPa.

The substrate 20 shown in FIG. 2 includes an insulating substrate main body 21, a plurality of pads 22A to 22D located on the upper surface 21a of the substrate main body 21, and a plurality of external terminals located on the lower surface 21b of the substrate main body 21. 23A to 23F (see FIG. 1), internal conductors 24 connecting these pads 22A to 22D and external terminals 23A to 23F and positioned inside the base body 21, and fibers positioned inside the base body 21 a body 25;

The material of the base body portion 21 is arbitrary. For example, the material of the base body portion 21 may be an inorganic material or an organic material. Examples of inorganic materials include ceramics and amorphous materials in which a plurality of inorganic particles are bonded together. Examples of organic materials include thermosetting resins. Thermosetting resins include, for example, epoxy resins, phenol resins, melamine resins, bismaleimide triazine resins, urea resins and unsaturated polyester resins. In this embodiment, the case where the material of the base body portion 21 is an organic material is taken as an example.

The base body 21 shown in FIG. 2 has a first surface 21a to which the bonding member 30 is bonded, a second surface 21b located on the opposite side of the first surface 21a, and the first surface 21a and the second surface 21b. and a third surface 21c connecting the The first surface 21 a constitutes the upper surface of the base body 21 , the second surface 21 b constitutes the lower surface of the base body 21 , and the third surface 21 c constitutes the side surface of the base body 21 .

Please refer to FIGS. The thickness and shape of the pads 22A-22D are arbitrary. For example, the thickness (vertical direction) of the pads 22A to 22D is 1 μm or more and 50 μm or less. The thicknesses of the pads 22A to 22D may all be the same, the thicknesses may be different, or only some of the pads may have different thicknesses in relation to the other pads. good too. The shape of the pads 22A to 22D in plan view may be circular, elliptical, or rectangular, for example. All of the pads 22A to 22D may have the same shape, or only some of the pads may have different shapes in relation to other pads. Hereinafter, one arbitrarily selected from the plurality of pads 22A to 22D may be simply referred to as pad 22. FIG.

Please refer to FIGS. The number of pads 22 can be set arbitrarily. For example, the number of pads 22 may be 4 or more, or 8 or more. The number of pads 22 may be set according to the number of external terminals 23 .

The size and shape of the external terminals 23A-23F are arbitrary. The external terminals 23A to 23F may have, for example, a rectangular flat plate shape, or may have a needle shape having a predetermined vertical length. The plurality of external terminals 23A to 23F may all have the same size, or may have different sizes. May be mixed. Each of the external terminals 23A to 23F shown in FIG. 2 has a rectangular flat plate shape. Hereinafter, one arbitrarily selected from the plurality of external terminals 23A to 23F may be simply called an external terminal 23. FIG.

The number of external terminals 23 can be set arbitrarily. For example, the number of external terminals 23 may be 3 or more, 6 or more, or 12 or more.

The internal conductor 24 is composed of via conductors and conductor patterns. These via conductors and conductor patterns are continuous with each other. The diameter of the via conductor may be, for example, 60 μm or more and 200 μm or less. The via conductor may have, for example, a circular cross-sectional shape or a rectangular cross-sectional shape. The conductor pattern is layered. The thickness of the conductor pattern may be, for example, 10 μm or more and 100 μm or less.

The fibrous body 25 is, for example, nonwoven fabric or woven fabric. FIG. 2 shows a fibrous body 25 comprising a woven fabric. The fibrous body 25 shown in FIG. 2 has warp yarns 25a made up of fibers extending in the front-rear direction and weft yarns 25b made up of weft yarns 25b extending in the left-right direction. The warp yarn 25a and the weft yarn 25b may be composed only of glass fiber, may be composed only of carbon fiber, or may be partially composed of glass fiber and the rest is composed of a material other than glass (for example, carbon fiber ) may be configured by When the fibrous body 25 contains glass fibers, it can be said that the fibrous body 25 is a glass cloth. The glass cloth contains glass fibers. Glass fiber (glass) contains, for example, silicon dioxide (SiO2) as a main component.

In addition to the above configuration, the first surface 21a of the substrate 20 may be coated with a solder resist.

(joining member)
The joining member 30 shown in FIG. 2 is positioned between the base 20 and the mounting body 2 and joins them. The shape of the joining member 30 is arbitrary. The joining member 30 shown in FIG. 1 has a layered shape (including a flat plate shape). The joining member 30 may have a rectangular shape or a circular shape when viewed through the plane. The shape of the joining member 30 may be changed according to the surface of the substrate 20 to which the joining member 30 is joined.

Please refer to FIGS. When viewed through a plane, the bonding member 30 may be slightly larger than the first surface 21a, smaller than the first surface 21a of the base 20, or the same size as the first surface 21a of the base 20. may be The thickness of the joining member 30 may be 1/2 or less, 1/4 or less, 1/8 or less, or 1/16 of the thickness of the base 20. It may be less than, 1/32 or less, or 1/2 or more. It may be thicker than the pads 22A-22D or thinner than the pads 22A-22D. The thickness of the joining member 30 is, for example, 10 μm or more and 100 μm or less.

The linear expansion coefficient of the joining member 30 can be set arbitrarily. For example, the linear expansion coefficient of the joining member 30 may be 1-8 ppm/K, or 3-5 ppm/K. For example, the joining member 30 may have different coefficients of linear expansion in the horizontal and vertical directions, or may have the same coefficient of linear expansion in the horizontal and vertical directions. For example, the coefficient of linear expansion of the joining member 30 may be smaller than the coefficient of linear expansion of the base 20 . More specifically, the coefficient of linear expansion of the joining member 30 may be smaller than the coefficient of linear expansion of the substrate 20 in the horizontal and vertical directions.

The glass transition temperature of the joining member 30 may be, for example, 250° C. or higher, 260° C. or higher, or 270° C. or higher. For example, the glass transition temperature of the bonding member 30 may be higher than the glass transition temperature of the substrate 20 . However, the glass transition temperature of the joining member 30 may be the same as the glass transition temperature of the substrate 20 or may be lower than the glass transition temperature of the substrate 20 . For example, the material of the joining member 30 may be selected so that the glass transition temperature becomes a desired value.

The Young's modulus of the joining member 30 is arbitrary. The Young's modulus of the joining member 30 may be larger than that of the base 20 , may be the same as that of the base 20 , or may be smaller than that of the base 20 . For example, the Young's modulus of the joining member 30 may be set within the range of 15 to 150 GPa, may be set within the range of 30 to 100 GPa, or may be set within the range of 45 to 100 GPa. .

The joining member 30 shown in FIG. 2 is provided with two openings 31 and 32 that open to the upper and lower surfaces of the joining member 30 . One opening 31 (the opening 31 located on the left side in FIG. 2) is called the first opening 31, and the other opening 32 (the opening 32 located on the right side in FIG. 2) is called the second opening 32. call. A space of a predetermined size is formed inside the first opening 31, in which pads 22A and 22B (hereinafter referred to as "first pads 22A and 22B") are positioned. On the other hand, a space of a predetermined size is formed inside the second opening 32, and pads 22C and 22D (hereinafter referred to as "second pads 22C and 22D") are positioned. The inner wall 31a of the first opening 31 surrounds the first pads 22A and 22B, and the inner wall 32a of the second opening 32 surrounds the second pads 22C and 22D. The first opening 31 and the second opening 32 are made by laser or punching, for example. A portion of the joint member 30 excluding the first opening 31 and the second opening 32 (the portion filled with the material forming the joint member 30 ) is called a solid portion 33 .

The size and shape of the first opening 31 and the second opening 32 are arbitrary. The first opening 31 and the second opening 32 may have the same size, or may have different sizes. In planar see-through, the first opening 31 and the second opening 32 may be rectangular, circular, or elliptical. Planar see-through WHEREIN: The 1st opening part 31 and the 2nd opening part 32 may exhibit the same shape, and may exhibit a different shape.

The joining member 30 has a reinforcing material 34 and a base material 35 impregnated with the reinforcing material 34 .

(reinforcing material)
For example, stiffener 34 is cloth. The fabric may be woven or non-woven. FIG. 2 shows reinforcement 34 which is a woven fabric. The density of the reinforcing material 34 is set arbitrarily.

The size and shape of the reinforcing member 34 are arbitrary. The reinforcing material 34 may be larger than the base material 35 , may be the same size as the base material 35 , or may be smaller than the base material 35 when viewed through the plane. Further, the reinforcing member 34 may be thinner than the base material 35 or thicker than the base material 35 in the vertical direction. The thickness of the reinforcing material 34 is, for example, 10 μm or more and 100 μm or less. The reinforcing member 34 may have, for example, a rectangular shape or a circular shape when viewed through a plane.

The reinforcing material 34 shown in FIG. 2 has warp yarns 34a extending in the front-rear direction and weft yarns 34b extending in the left-right direction and crossing the warp yarns 34a. Also refer to FIG. The warp yarn 34a is formed by gathering a plurality of fibers extending in the front-rear direction. On the other hand, the weft 34b is formed by gathering a plurality of fibers extending in the left-right direction. It should be noted that the method of weaving the reinforcing material 34 is not limited to a woven fabric including the warp yarns 34a and the weft yarns 34b.

The warp threads 34a and the weft threads 34b may be composed of, for example, only glass fibers, or may be composed only of carbon fibers. Furthermore, the warp threads 34a and the weft threads 34b may be partly made of glass fiber and the rest may be made of a material other than glass (for example, carbon fiber). If the warp yarns 34a and weft yarns 34b contain glass fibers, it can be said that the reinforcing material 34 (fabric) is glass cloth. The glass cloth may contain, for example, glass containing silicon dioxide (SiO ₂ ) as a main component.

For example, from the viewpoint of improving the glass transition temperature, the fibers that constitute the reinforcing material 34 may be selected. For example, the reinforcing material 34 may be made of glass fibers to improve the glass transition temperature. Furthermore, the glass transition temperature may be improved by varying the density of the reinforcing material 34 (the density of the warp yarns 34a and the weft yarns 34b). For example, increasing the warp density and/or the weft density may increase the glass transition temperature.

The warp yarn 34a may have an elongated shape in which a plurality of fibers are arranged horizontally when viewed in a cross section perpendicular to the direction in which the warp yarn 34a extends. On the other hand, the weft 34b may have an elongated shape in which a plurality of fibers are arranged in the horizontal direction when viewed in a cross section perpendicular to the direction in which the weft 34b extends. The warp yarn 34a and the weft yarn 34b having such a shape can make the glass cloth (cloth) thinner. This makes the base structure 10 compact.

The reinforcing material 34 shown in FIG. 2 is entirely located inside the base material 35 . However, in another aspect, the reinforcement member 34 is, for example, partly (for example, most) located inside the base material 35 and the remaining part is exposed from the surface of the base material 35 to the outside of the base material 35. good too.

(base material)
A base material 35 shown in FIG. 2 generally forms the outer shape of the joining member 30 . Therefore, for the size and shape of the base material 35 shown in FIG. 2, the size and shape of the joining member 30 can be used. However, the base material 35 may be smaller than the reinforcing member 34 as a whole and may not constitute the outer shape of the reinforcing member 34 .

Please refer to FIG. The base material 35 is, for example, resin. Examples of resins include thermosetting resins such as epoxy resins, phenol resins, melamine resins, bismaleimide triazine resins, urea resins and unsaturated polyester resins.

(implementation body)
The mounting body 2 is joined to the base 20 via the joining member 30 . The size of the mounting body 2 is arbitrary. The mounting body 2 may be larger than the base structure 10 , smaller than the base structure 10 , or the same size as the base structure 10 . The shape of the mounting body 2 is arbitrary. For example, the mounting body 2 may have a rectangular plate shape, or may not have a rectangular shape.

The mounting body 2 shown in FIG. 2 includes a first chip 40 connected to the first pads 22A and 22B, a second chip 50 connected to the second pads 22C and 22D, and the first chip 40 and the second chip and a sealing portion 60 that covers the outer peripheral surface of the base structure 50 and is joined to the joining member 30 (base structure 10).

The first chip 40 and the second chip 50 are, for example, elastic wave chips capable of outputting a predetermined electric signal by utilizing the characteristic that an elastic wave propagates when an electric signal is input. The elastic wave may be SAW (Surface Acoustic Wave) or BAW (Bulk Acoustic Wave), for example. Furthermore, an acoustic wave chip can also be simply called a chip. The acoustic wave chip may be, for example, a chip having an acoustic wave resonator or a chip having an acoustic wave filter. The first chip 40 and the second chip 50 may be MEMS (Micro Electro Mechanical Systems). Also refer to FIG. FIG. 4 schematically shows a chip with a 1-port SAW resonator. For example, such a first chip 40 and a second chip 50 are connected to the first pads 22A, 22B and the second pads 22C, 22D and mounted on the base structure 10. FIG.

(first chip)
Please refer to FIG. The first chip 40 is positioned above the first opening 31 formed in the bonding member 30, faces the first surface 21a through the first opening 31, and is bonded to the first pads 22A and 22B. there is The first chip 40 is bonded to first pads 22A and 22B via bumps 3A and 3B (first bumps 3A and 3B to be described later).

Please refer to FIG. The first chip 40 shown in FIG. 4 includes a first chip substrate 41, first excitation electrodes 42 located on the surface (lower surface) of the first chip substrate 41, and a pair of electrodes sandwiching the first excitation electrodes 42. Two first terminals 44A, 44B located apart from the first reflectors 43A, 43B and the first excitation electrode 42, and a first terminal connecting the first terminals 44A, 44B and the first excitation electrode 42 1 connecting portions 45A and 45B.

The size and shape of the first chip substrate 41 are arbitrary. The first chip substrate 41 may have a rectangular flat plate shape, or may have a circular flat plate shape. The thickness of the first chip substrate 41 is, for example, 100 μm or more and 500 μm or less.

Also refer to FIG. The first chip substrate 41 has a first opposing surface 41a facing the substrate 20, a first opposing surface 41b located on the opposite side of the first opposing surface 41a, and the first opposing surface 41a and the first opposing surface 41b. and a first side surface 41c connecting the surfaces 41b. The first terminals 44A, 44B are located on the first opposing surface 41a.

Please refer to FIGS. The first opposing surface 41 a shown in FIG. 3 is the lower surface of the first chip substrate 41 and faces the first surface 21 a through the first opening 31 . FIG. 3 shows a view in which a portion of the sealing portion 60 is interposed between the first opposing surface 41a and the joining member 30. As shown in FIG. However, part of the sealing portion 60 may not be interposed between the first opposing surface 41 a and the joining member 30 . That is, the first opposing surface 41 a may not be in contact with the upper surface of the joint member 30 or may be in contact with the upper surface of the joint member 30 . A portion (first extension portion 66) of the sealing portion 60 located between the first opposing surface 41a and the joint member 30 will be described later. The distance from the first opposing surface 41a to the first surface 21a is, for example, 10 μm or more and 100 μm or less. The first opposing surface 41 a is exposed from the sealing portion 60 .

Please refer to FIGS. The first opposite surface 41 b is the upper surface of the first chip substrate 41 and is in contact with the sealing portion 60 as a whole. The first side surface 41c shown in FIG. 2 has a portion located outside the first opening 31 formed in the joint member 30 in plan see-through. From another point of view, it can be said that the first chip 40 (first side surface 41c) has a portion that overlaps the solid portion 33 of the joining member 30 when viewed through the first surface 21a.

Here, when attention is paid to the first side surface 41c and the first opening 31, the first side surface 41c may be entirely located outside the first opening 31 in planar see-through, or 70% of the entire first side surface 41c may be located outside the first opening 31. The above may be positioned outside the first opening 31, 40% or more of the whole may be positioned outside the first opening 31, or 40% or less of the whole may be positioned outside the first opening 31. May be located outside. When the entire first side surface 41 c is positioned outside the first opening 31 , the first opening 31 is closed by the first chip 40 when viewed through the plane.

A portion of the first chip substrate 41, including at least the first opposing surface 41a, is made of a piezoelectric material. For example, the first chip substrate 41 may be entirely composed of a piezoelectric material, or may not be entirely composed of a piezoelectric material. Examples of the first chip substrate 41 that is not entirely composed of a piezoelectric material include a substrate having a plate-like piezoelectric material attached to a first base portion 41d described later, and a substrate having a piezoelectric material attached to the surface of the first base portion 41d. A substrate on which a film is formed, or the like can be mentioned. The first chip substrate 41 shown in FIG. 4 has a structure in which a first piezoelectric portion 41e is fixed to a flat (including layered) first base portion 41d.

The first base portion 41d may be composed of, for example, a semiconductor such as silicon, a ceramic such as aluminum oxide, or a single crystal material such as sapphire. The first base portion 41d may be configured by, for example, only one substrate, or may be configured by stacking two or more substrates. In the first base portion 41d including two or more substrates, these substrates may be made of different materials. The coefficient of linear expansion of the first base portion 41d may be, for example, 1 to 9 ppm/K, or may be 2 to 4 ppm/K.

The material of the first base portion 41d is arbitrary. For example, the material of the first base portion 41d may be selected so that the first base portion 41d has a desired Young's modulus. Young's modulus of the first base portion 41d is, for example, 160 to 210 GPa.

The first piezoelectric portion 41e shown in FIG. 4 has a flat plate shape (including a layer shape). The first piezoelectric portion 41e is a member that generates an elastic wave on its surface when a signal is input to the first excitation electrode 42 (when a voltage is applied). The material of the first piezoelectric portion 41e is, for example, crystal, lead zirconate titanate, barium titanate, potassium niobate, lithium niobate, lithium tantalate, or the like. The Young's modulus of the first piezoelectric portion 41e is, for example, 210 to 250 GPa.

The coefficient of linear expansion of the first piezoelectric portion 41e may be, for example, greater than the coefficient of linear expansion of the first base portion 41d. The coefficient of linear expansion of the first piezoelectric portion 41e is, for example, 10 to 18 ppm/K. The linear expansion coefficient of the first piezoelectric portion 41e may be different in each of the up, down, front, back, left, and right directions. For example, the linear expansion coefficient in the vertical direction may be smaller than the linear expansion coefficient in the front-rear direction and/or the horizontal direction, or may be larger than the linear expansion coefficient in the front-rear direction and the horizontal direction. As one aspect, the first piezoelectric portion 41e has a vertical linear expansion coefficient of 8 to 15 ppm/K, a lateral linear expansion coefficient of 12 to 18 ppm/K, and a longitudinal linear expansion coefficient of 10. It may be ~16 ppm/K.

FIG. 4 shows a view in which the first piezoelectric portion 41e is attached (fixed) to the entire lower surface of the first base portion 41d. However, the first piezoelectric portion 41e may be provided only on a portion of the lower surface of the first base portion 41d, for example. The first piezoelectric portion 41e may be thinner than the first base portion 41d, for example. The first piezoelectric portion 41e may be fixed to the first base portion 41d with an adhesive containing an organic material or an inorganic material, or may be fixed (bonded) directly to the first base portion 41d.

The first excitation electrode 42 is, for example, an IDT electrode including two interdigitated metal layers. The first excitation electrode 42 may be, for example, an electrode in one metal layer, or may be an electrode in two or more metal layers. The metal layer may be, for example, aluminum, copper, or alloys thereof. The first excitation electrode 42 is connected to first terminals 44A and 44B via first connection portions 45A and 45B.

The first excitation electrode 42 shown in FIG. 4 includes two first bus bars 42a extending in a predetermined direction (for example, the propagation direction of elastic waves) and having both ends facing a pair of first reflectors 43A and 43B. 42b, and first electrode fingers 42c, 42d perpendicular to the two first bus bars 42a, 42b.

The first electrode finger 42c extends from the first busbar 42a toward the first busbar 42b, and the first electrode finger 42d extends from the first busbar 42b toward the first busbar 42a. The first electrode fingers 42c are connected only to the first busbar 42a, and the first electrode fingers 42d are connected only to the first busbar 42b.

The number of first electrode fingers 42c and 42d is arbitrary. The plurality of first electrode fingers 42c and 42d are arranged alternately so as to mesh with each other. The distance (pitch) between adjacent first electrode fingers 42c and 42d is arbitrary. By changing this distance (pitch), the frequency of the elastic wave propagating through the first piezoelectric portion 41e can be changed. An elastic wave whose wavelength is half the distance between the first electrode finger 42c and the first electrode finger 42d propagates through the first piezoelectric portion 41e. The distance between the adjacent first electrode fingers 42c and 42d may be appropriately set so as to generate an elastic wave at a desired frequency.

The first reflectors 43A and 43B can reflect elastic waves propagated from the first excitation electrode 42 toward the first excitation electrode 42 . The first reflectors 43A and 43B are located on the lower surface of the first piezoelectric portion 41e together with the first excitation electrode 42 and face the base 20. As shown in FIG. However, the first excitation electrode 42 and the first reflectors 43A and 43B, together with the first connecting portions 45A and 45B, may be covered with insulating protective films, respectively.

The first reflectors 43A and 43B shown in FIG. 4 include two first busbars 43a and 43b extending in a predetermined direction (direction in which elastic waves propagate), and two busbars 43a and 43b perpendicular to the two first busbars 43a and 43b. and a first strip electrode 43c connected to the first bus bars 43a, 43b. A plurality of first strip electrodes 43c are provided on each of the first reflectors 43A and 43B.

Also refer to FIG. The first excitation electrode 42 and the pair of first reflectors 43A and 43B are positioned inside the first opening 31 when viewed through the plane. As a result, the first excitation electrode 42 and the first reflectors 43A and 43B are positioned in a space (first region Re1 described later) sandwiched between the first chip substrate 41 and the base 20. FIG. As a result, propagation of elastic waves in the first piezoelectric portion 41e is facilitated.

Refer only to FIG. FIG. 4 shows the first chip 40 having only one first excitation electrode 42 and one pair of first reflectors 43A, 43B. However, the first chip 40 may have a plurality of first excitation electrodes 42 and pairs of first reflectors 43A and 43B. Furthermore, a plurality of first excitation electrodes 42 may constitute a ladder filter or a multimode filter. The same applies to the second chip 50, which will be described later.

(Second chip)
The description of the first chip may be incorporated into the description of the second chip 50 . At this time, the first chip substrate 41 is connected to the second chip substrate 51, the first excitation electrode 42 is connected to the second excitation electrode 52, the first reflectors 43A and 43B are connected to the second reflectors 53A and 53B, and the first terminal 44A is connected. , 44B can be read as the second terminals 54A and 54B, and the first connection portions 45A and 45B can be read as the second connection portions 55A and 55B. Further, the first bus bars 42a, 42b and the first electrode fingers 42c, 42d constituting the first excitation electrodes 42 can be read as the second bus bars 52a, 52b and the second electrode fingers 52c, 52d. Further, the first busbars 43a, 43b and the first strip electrodes 43c constituting the first reflectors 43A, 43B can be read as the second busbars 53a, 53b and the second strip electrodes 53c. The second chip 50 will be described below, but the parts common to the first chip 40 will be omitted.

Please refer to FIG. The second chip 50 is positioned above the second opening 32 formed in the bonding member 30, faces the first surface 21a through the second opening 32, and is bonded to the second pads 22C and 22D. there is The second chip 50 is joined to second pads 22C and 22D via bumps 3C and 3D (second bumps 3C and 3D to be described later).

The second side surface 51c shown in FIG. 2 has a portion positioned outside the second opening 32 formed in the joint member 30 in plan see-through. From another point of view, it can be said that the second chip 50 (the second side surface 51c) has a portion that overlaps the solid portion 33 of the joining member 30 in plan see-through of the first surface 21a. The ratio of the second side surface 51c located outside the second opening 32 in planar perspective may be the same as the ratio of the first side surface 41c located outside the first opening 31 in planar perspective. may be different from

(Relationship between first chip and second chip)
The shape and dimensions of the first chip 40 and the shape and dimensions of the second chip 50 may be the same or different.

As one aspect, the first chip 40 and the second chip 50 may be electrically connected via the external terminals 23 . By connecting the first chip 40 and the second chip 50 via the external terminals 23, the electronic device 1 can configure, for example, a branching filter (eg, duplexer). For example, the first chip 40 is a filter that passes only electrical signals having frequencies in the passband region for transmission, and the second chip 50 is a filter that passes only electrical signals having frequencies in the passband region for reception. may be The communication band for transmission and the communication band for reception do not overlap each other.

The first chip 40 and the second chip 50 are electrically connected to the first pads 22A, 22B and the second pads 22C, 22D via bumps 3A to 3D, respectively. The bumps 3A and 3B connecting the first chip 40 and the first pads 22A and 22B are hereinafter referred to as first bumps 3A and 3B, and the bumps 3C and 3D connecting the second chip 50 and the second pads 22C and 22D are referred to as first bumps 3A and 3B. are called second bumps 3C and 3D.

(first bump)
Please refer to FIGS. The first bumps 3A, 3B are located between the substrate 20 and the first chip 40, and electrically connect the first pads 22A, 22B and the first terminals 44A, 44B. The height of the first bumps 3A, 3B (the distance from the first pads 22A, 22B to the first terminals 44A, 44B) is smaller than the thickness of the bonding member 30, for example. The height of the first bumps 3A and 3B may be, for example, 1 time or less, 4/5 times or less, or 3/5 times or less the thickness of the bonding member 30. , 2/5 times or less, or 1/5 times or less. The first bumps 3A and 3B shown in FIG. 2 are entirely located inside the first opening 31 and surrounded by the inner wall 31a of the first opening 31. As shown in FIG.

The size and shape of the first bumps 3A and 3B are arbitrary. For example, the first bumps 3A, 3B may be larger than the first pads 22A, 22B and/or the first terminals 44A, 44B in cross section along the horizontal direction. It may be smaller than terminals 44A and 44B. Furthermore, the first bumps 3A and 3B may have a rectangular cross section, a circular shape, or an elliptical shape in a cross section along the horizontal direction.

The first bumps 3A, 3B are, for example, solder. The solder may be lead-containing solder or lead-free solder. Solders containing lead include Pb—Sn alloy solders and the like. Examples of lead-free solder include Au--Sn alloy solder, Au--Ge alloy solder, Sn--Ag alloy solder, and Sn--Cu alloy solder. Incidentally, the first bumps 3A and 3B may be a conductive adhesive material in which a conductive filler is mixed with a thermosetting resin or the like.

The coefficient of linear expansion of the first bumps 3A, 3B may be set, for example, within the range of 18-25 ppm/K, or may be set within the range of 20-23 PPm/K. For example, the coefficients of linear expansion of the first bumps 3A and 3B are greater than the coefficient of linear expansion of the bonding member 30 . That is, it can be said that the first bumps 3A and 3B are surrounded by the bonding member 30 having a smaller coefficient of linear expansion than the first bumps 3A and 3B. The coefficient of linear expansion of the first bumps 3A and 3B may be, for example, greater than the coefficient of linear expansion of the first piezoelectric portion 41e. The coefficient of linear expansion of the first bumps 3A and 3B may be larger than the coefficient of linear expansion of the sealing portion 60 or may be smaller than the coefficient of linear expansion of the sealing portion 60 .

(second bump)
Please refer to FIG. For example, the first bumps 3A, 3B can be incorporated into the second bumps 3C, 3D. The second bumps 3C and 3D will be described below, but the parts common to the first bumps 3A and 3B will be omitted. The second bumps 3C, 3D are located between the substrate 20 and the second chip 50, and electrically connect the second pads 22C, 22D and the second terminals 54A, 54B. The second bumps 3C, 3D may be higher than the first bumps 3A, 3B, may be lower than the first bumps 3A, 3B, or may have the same height as the first bumps 3A, 3B. good too.

The second bumps 3C and 3D shown in FIG. 2 are entirely located inside the second opening 32 and surrounded by the inner wall 32a of the second opening 32. As shown in FIG. The second bumps 3C and 3D do not have portions located outside the second openings 32 formed in the bonding member 30 . As for the height of the second opening 32, the description of the height of the first opening 31 can be used.

(sealing part)
The sealing part 60 shown in FIG. 2 covers the upper surfaces and outer peripheral surfaces of the first chip 40 and the second chip 50 so that the lower surfaces of the first chip 40 and the second chip 50 are exposed. The sealing portion 60 entirely covers the first chip 40 and the second chip 50 together with the base structure 10 .

The coefficient of linear expansion of the sealing portion 60 can be set arbitrarily. For example, the coefficient of linear expansion of the sealing portion 60 may be 6-80 ppm/K. The coefficient of linear expansion of the sealing portion 60 may be different in the horizontal direction (front, back, left, and right) and in the vertical direction. For example, the horizontal linear expansion coefficient may be 6 to 30 ppm/K and the vertical linear expansion coefficient may be 20 to 80 ppm/K. The coefficient of linear expansion of the sealing portion 60 may be greater than that of the joining member 30 . More specifically, the coefficient of linear expansion of the sealing portion 60 in the horizontal direction and the vertical direction may be greater than the coefficient of linear expansion of the joining member 30 in the horizontal direction and/or the vertical direction.

The glass transition temperature of the sealing portion 60 is set lower than the glass transition temperature of the bonding member 30 . In other words, the glass transition temperature of the joining member 30 is higher than the glass transition temperature of the sealing portion 60 . For this reason, it can be said that the bonding member 30 is less likely to become vitreous (become softer) than the sealing portion 60 even when heat is applied.

The glass transition temperature of the sealing portion 60 may be set within a range of 110 to 200° C., for example. For example, the glass transition temperature of the sealing portion 60 may be set so that the difference between the glass transition temperature of the sealing portion 60 and the bonding member 30 is 140° C. or less under the condition that the glass transition temperature of the sealing portion 60 is set lower than the glass transition temperature of the bonding member 30 . 30 may be set to be 90° C. or less, the difference from the bonding member 30 may be set to be 70° C. or less, or the difference from the bonding member 30 may be set to be 40° C. or less. may be set as

The material of the sealing portion 60 may be, for example, an organic material. Examples of organic materials include resins (thermosetting resins). Thermosetting resins include epoxy resins, phenolic resins, melamine resins, bismaleimide triazine resins, urea resins, unsaturated polyester resins, and the like. Again, the glass transition temperature of the sealing portion 60 is lower than the glass transition temperature of the joining member 30 . The material for the sealing portion 60 is selected under these conditions. The Young's modulus of the sealing portion 60 may be, for example, within the range of 0.05 to 17 Gpa. Furthermore, the Young's modulus of the sealing portion 60 may vary with temperature. For example, the Young's modulus of the sealing portion 60 may be 10 to 20 GPa at normal temperature (eg, 15 to 30° C.) and 1.5 GPa or less at high temperature (eg, 220 to 270° C.). Note that the Young's modulus of the sealing portion 60 may be smaller than the Young's modulus of the joining member 30 . The material of the sealing portion 60 may be the same as the material of the base material 35 or may be different from the material of the base material 35 . Incidentally, the sealing portion 60 may contain a filler.

The sealing part 60 shown in FIG. a first concave portion 64 recessed from the lower surface portion 61 toward the upper surface portion 62 and in which the first chip 40 is located; a second recess 65 in which the second chip 50 is positioned; a first extension 66 (see FIG. 3) extending from the inner surface of the first recess 64 along the joining member 30; and a second extension 67 extending from the inner surface of 65 along joining member 30 .

The lower surface portion 61 shown in FIG. 2 is wholly joined to the joining member 30 . The depths of the first recess 64 and the second recess 65 are each arbitrary. The depth of the first recess 64 may be the same as the thickness of the first chip 40 or may be smaller than the thickness of the first chip 40 . In FIG. 2, the inner surface of the first recess 64 is in contact with the side surface 41c of the first chip 40. As shown in FIG. However, the inner surface of the first recess 64 may be separated from the side surface 41 c of the first chip 40 . On the other hand, the depth of the second recess 65 may be the same as the thickness of the second chip 50 or may be smaller than the thickness of the second chip 50 . In FIG. 2, the inner surface of the second recess 65 is in contact with the side surface 51c of the second tip 50. As shown in FIG. However, the inner surface of the second recess 65 may be separated from the side surface 51c of the second chip 50. FIG.

The first extension 66 shown in FIG. 3 extends from the inner surface of the first recess 64 along the surface of the joint member 30 to the inner wall 31 a of the first opening 31 formed in the joint member 30 . The first extension 66 is joined to the upper surface of the joining member 30 and the inner wall 31 a of the first opening 31 formed in the joining member 30 . However, the first extension 66 may not extend to the inner wall 31 a of the first opening 31 formed in the joint member 30 and may be joined only to the upper surface of the joint member 30 . The thickness of the first extension portion 66 along the surface of the joining member 30 may be, for example, 1 μm or less or 1 μm or more.

The description of the first extension portion 66 can be used for the description of the second extension portion 67 shown in FIG. The second extension 67 may extend along the surface of the joint member 30 to the inner wall 32a of the second opening 32 or may not extend to the inner wall 32a of the second opening 32 . The thickness of the second extension portion 67 along the surface of the joining member 30 may be, for example, 1 μm or less, or 1 μm or more.

(region)
The electronic device 1 is provided with a first region Re1 containing the first bumps 3A and 3B and a second region Re2 containing the second bumps 3C and 3D. The first region Re1 is a region surrounded by the first chip 40 (first opposing surface 41a), the joining member 30 (inner wall 31a), and the substrate 20 (first surface 21a). On the other hand, the second region Re2 is a region surrounded by the second chip 50 (second facing surface 51a), the joining member 30 (inner wall 32a) and the base 20 (first surface 21a). The height of the first region Re1 may be the same as the thickness of the joint member 30, or may be slightly larger than the thickness of the joint member 30 (by the thickness of the first extension portion 66). The same applies to the height of the second region Re2. The inside of the first region Re1 and the inside of the second region Re2 may be in a vacuum state or may be filled with a predetermined gas (for example, nitrogen). This reduces direct exposure of the first bumps 3A, 3B and the second bumps 3C, 3D to the outside. As a result, the durability of the electronic device 1 can be improved.

Next, a method for manufacturing an electronic device will be described.

Please refer to FIG. FIG. 5 shows a diagram illustrating a method of manufacturing the electronic device 1 according to one example. Refer only to FIG. 5A. As shown in FIG. 5A, a base structure 10 in which a bonding member 30 is superimposed on the base 20 is prepared. The joining member 30 may be in a semi-cured (uncured) state or in a cured state. Furthermore, the joining member 30 may be in a state of being joined to the base 20 or may be in a state of not being joined to the base 20 . The joining member 30 can be produced by making through holes (first opening 31 and second opening 32) in a sheet-like member containing cloth such as glass cloth inside thereof by laser or punching.

Please refer to FIGS. 5A and 5B. After the base structure 10 is prepared, for example, first bumps 3A, 3B and second bumps 3C, 3D are formed on the base structure 10 . Specifically, the first bumps 3A, 3B are bonded to the first pads 22A, 22B, and the second bumps 3C, 3D are bonded to the second pads 22C, 22D. Next, the mounting body 2 including the first chip 40 and the second chip 50 is prepared, and the mounting body 2 is mounted on the base structure 10 . The mounting body 2 is mounted on the base structure 10 by connecting the first and second terminals 44A, 44B, 54A, and 54B to the first and second bumps 3A to 3D and connecting the sealing portion 60 to the bonding member 30. It is performed by joining.

Refer only to FIG. 5B. As one aspect, the bonding of the sealing portion 60 to the bonding member 30 can be performed by bringing the sealing portion 60 into contact with the upper surface of the uncured bonding member 30 and curing the bonding member 30 . In one embodiment, the sealing portion 60 is joined to the joint member 30 by bringing the sealing portion 60 into contact with the upper surface of the joint member 30 in a hardened state, melting it, and then hardening it again. can.

5A and 5B, the method of directly bonding the mounting body 2 including the first chip 40 and the second chip 50 to the base structure 10 has been described. However, bonding of the mounting body 2 to the base structure 10 is not limited to the above method. For example, after bonding the first and second chips 40 and 50 to the first and second pads 22A-22D, the sealing part 60 covering the first and second chips 40 and 50 is formed on the top surface of the bonding member 30. By doing so, the mounting body 2 may be mounted on the base structure 10 . In one aspect, the method for forming the sealing portion 60 includes, for example, applying resin to the upper surface of the base structure 10 (joining member 30) so as to cover the first chip 40 and the second chip 50 mounted on the base structure 10. There is a method of forming the sealing portion 60 by supplying (uncured) and curing it. In one aspect, in the method of forming the sealing portion 60, a sheet-like resin (uncured) is applied to the upper surface of the bonding member 30 so as to cover the first chip 40 and the second chip 50 mounted on the base structure 10. There is a method of forming the sealing portion 60 bonded to the bonding member 30 by arranging and hardening it by applying pressure and heat. In one aspect, the method of forming the sealing portion 60 includes, for example, a screen printing method or a dispenser to cover the first chip 40 and the second chip 50 mounted on the base structure 10. There is a method of forming the sealing portion 60 bonded to the base structure 10 by supplying a resin and curing it. A powdered resin may be used instead of the uncured resin.

Also refer to FIG. 5C. In forming the sealing portion 60 , for example, part of the sealing portion 60 (hereinafter sometimes referred to as “resin”) may melt and flow onto the upper surface of the joining member 30 . The melted resin may flow, for example, along the upper surface of the joining member 30 and may flow inside the first opening 31 and/or the second opening 32 formed in the joining member 30 . Thereafter, the resin supplied to the upper surface of the joining member 30 is cured, thereby curing the resin that has flowed inside the first opening 31 and/or the second opening 32 . At this time, the resin that has flowed inside the first opening 31 and/or the second opening 32 joins the inner wall 31a and/or the inner wall 32a.

Please refer to FIGS. 5A-5C. 5A to 5C show a method of bonding one mounting body 2 to one base structure 10. FIG. However, for example, a plurality of mounted bodies 2 (wafer-shaped or singulated) may be simultaneously bonded to a wafer including a plurality of arrayed base structures 10 .

Please refer to FIGS. The glass transition temperature of the joining member 30 is higher than the glass transition temperature of the sealing portion 60 . As a result, even if the electronic device 1 is heated, the bonding member 30 is prevented from becoming glassy (softened) more easily than the sealing portion 60 . Therefore, the bonding member 30 is unlikely to become glassy, and can maintain a hard state even when heat is applied. Since the sealing portion 60 is bonded to the bonding member 30 capable of maintaining a hard state, a force is applied to the sealing portion 60 by the bonding member 30 in a direction opposite to the direction of thermal expansion. As a result, the thermal expansion of the sealing portion 60 is reduced through the bonding member 30 . As a result, a durable electronic device 1 can be provided.

The coefficient of linear expansion of the joining member 30 is smaller than the coefficient of linear expansion of the sealing portion 60 . As a result, the bonding member 30 has a smaller amount of thermal expansion (volume) than the sealing portion 60 even when heat is applied to the electronic device 1 . Since the sealing portion 60 is bonded to the bonding member 30 having a small thermal expansion, the bonding member 30 applies force to the sealing portion 60 in a direction opposite to the direction of thermal expansion. As a result, the thermal expansion of the sealing portion 60 is reduced through the bonding member 30 . As a result, a more durable electronic device 1 can be provided.

The coefficient of linear expansion of the joining member 30 is smaller than the coefficient of linear expansion of the base 20 . Furthermore, the glass transition temperature of the joining member 30 is higher than that of the substrate 20 . Since the linear expansion coefficient of the bonding member 30 is smaller than that of the base 20 , the bonding member 30 expands less than the base 20 when heat is applied. Since the glass transition temperature of the bonding member 30 is higher than the glass transition temperature of the base 20 , the bonding member 30 is prevented from becoming glassy more easily than the base 20 . Since the substrate 20 is bonded to the bonding member 30 having a small thermal expansion and a high glass transition temperature, the thermal expansion of the substrate 20 is reduced through the bonding member 30 . Therefore, a more durable electronic device 1 can be provided.

The first opposing surface 41 a is exposed from the sealing portion 60 . Since the first opposing surface 41a is exposed from the sealing portion 60, the electrical connection between the first chip 40 and the first pads 22A and 22B is preferably achieved in the first chip 40 whose outer peripheral surface is covered. can do.

When viewed through the first surface 21 a from above, the first chip 40 has a portion positioned outside the first opening 31 formed in the joining member 30 . As a result, for example, even when the first chip 40 is enlarged, the first opening 31 can be enlarged so that the first chip 40 is positioned inside the first opening 31 in plan see-through of the first surface 21a. becomes unnecessary. As a result, reduction in the volume of the joint member 30 (solid portion 33) can be reduced. Therefore, a durable electronic device 1 can be provided.

The sealing portion 60 has a portion joined to the inner wall 31 a of the first opening 31 formed in the joining member 30 . Since the sealing portion 60 has a portion that is bonded to the inner wall 31 a of the first opening 31 , the sealing portion 60 is more strongly bonded to the bonding member 30 . As a result, a durable electronic device 1 can be provided.

The joining member 30 has a reinforcing material 34 and a base material 35 impregnated with the reinforcing material 34 . Since the joint member 30 has the reinforcing member 34 , the strength of the joint member 30 is improved as compared with the case where the reinforcing member 34 is only the base material 35 . As a result, a durable electronic device 1 can be provided.

By increasing the strength of the bonding member 30, the first opening 31 formed in the bonding member 30 can be enlarged while ensuring the strength of the electronic device 1. FIG. As a result, the degree of freedom in positioning the first pads 22A and 22B located inside the first opening 31 can be improved. Thereby, the degree of freedom in designing the first chip 40 can be improved.
In addition, it is possible to partially surround the first bumps 3A and 3B with the bonding member 30 having strength, and to reduce the load applied to the first bumps 3A and 3B. As a result, a durable electronic device 1 can be provided.

The reinforcing material 34 is glass cloth. By using glass cloth as the reinforcing material 34, the strength of the joining member 30 can be further improved. As a result, a more durable electronic device 1 can be provided.

The joint member 30 has second openings 32 at locations where the second pads 22C and 22D are located. Furthermore, the second chip 50 is connected to the second pads 22C and 22D through the second openings 32. As shown in FIG. All of the first pads 22A, 22B and the second pads 22C, 22D are arranged inside the first openings 31 by forming the second openings 32 where the second pads 22C, 22D are located. No need. This eliminates the need to enlarge only the first opening 31 . As a result, reduction in the volume of the joining member 30 can be reduced. Therefore, the durable electronic device 1 can be provided.

Next, an electronic device in the first modified example will be described.

See FIG. 6A. FIG. 6A shows an electronic device 101 according to the first modified example of the present disclosure. For the parts common to the electronic device 1 of the embodiment, reference numerals are used and detailed explanations are omitted.

(joining member)
In the joining member 130 shown in FIG. 6A , the first opening 131 and the second opening 132 are larger than the first chip 40 and the second chip 50 when viewed through the first surface 21a. From another point of view, in plan see-through of the first surface 21a, the inner wall 131a of the first opening 131 surrounds the first side surface 41c of the first chip 40, and the inner wall 132a of the second opening 132 surrounds the second side surface 41c. It surrounds the second side surface 51c of the chip 50 . From another point of view, it can be said that the solid portion 33 of the joint member 130 does not have a portion that overlaps the first chip 40 and the second chip 50 when the first surface 21a is viewed through the plane. Thereby, the joining member 130 and the sealing portion 60 can be joined more strongly. As a result, a durable electronic device 101 can be provided.

Next, an electronic device in the second modified example will be described.

See FIG. 6B. FIG. 6B shows an electronic device 201 according to the second modified example of the present disclosure. For the parts common to the electronic device 1 of the embodiment, reference numerals are used and detailed explanations are omitted.

(joining member)
In the joining member 230 shown in FIG. 6B, the first opening 231 and the second opening 232 have the same size as the first chip 40 and the second chip 50 when viewed through the first surface 21a. From another point of view, the side surface (first side surface 41c) of the first chip 40 entirely overlaps with the inner wall 231a of the first opening 231 when viewed through the first surface 21a. The two side surfaces 51 c are entirely overlapped with the inner wall 232 a of the second opening 232 . As a result, a sufficient area for bonding the sealing portion 60 to the bonding member 230 can be ensured in plan view. As a result, a durable electronic device 201 can be provided. In addition, since the position of the sealing portion 60 between the first chip 40 and the inner wall 231a of the first opening portion 231 is reduced when viewed through the first surface 21a, the first bumps 3A, 3B and the first pads 22A and 22B are sufficiently secured in the region Re1. Thereby, the degree of freedom in designing the first chip 40 can be improved. In addition, when the first surface 21a is viewed through the plane, the side surfaces of the first chip 40 and the second chip 50 and the inner walls 231a and 232a of the first opening 231 and the second opening 232 overlap each other. This means that the deviation is 10 μm or less.

Next, an electronic device in the third modified example will be described.

Please refer to FIG. FIG. 7 shows an electronic device 301 according to the third modified example of the present disclosure. For the parts common to the electronic device 1 of the embodiment, reference numerals are used and detailed explanations are omitted.

The substrate 320 shown in FIG. 6 includes a substrate main body portion 321 made of ceramic, a plurality of pads 22A to 22D positioned on the upper surface 21a of the substrate main body portion 321, and a plurality of external terminals positioned on the lower surface 21b of the substrate main body portion 321. 23A to 23F (see FIG. 1), and an internal conductor 24 that connects the pads 22A to 22D and the external terminals 23A to 23F and is positioned inside the base body 321. As shown in FIG.

The coefficient of linear expansion of the substrate 320 may be, for example, 4-12 ppm/K or 5-10 ppm/K. For example, the coefficient of linear expansion of the base 320 may be greater than the coefficient of linear expansion of the joining member 30 . The Young's modulus of the substrate 320 may be, for example, 250-420 GPa or 280-350 GPa.

Note that the base structure and the electronic device in the present disclosure are not limited to the above-described embodiments and modifications, and may be implemented in various forms. Some examples in which the forms of the base structure and the electronic device are modified are introduced below.

In the embodiment, an example of a joint member configured only with a reinforcing material and a base material has been described. However, the joining member may contain filler or the like in addition to these. In the bonding member 30, an example in which one cloth (glass cloth) is impregnated with the base material has been described. The material may be impregnated. Furthermore, the joining member may be composed of only a resin that does not contain glass cloth, or may be composed of a resin in which a filler is positioned.

In the embodiment, an example of the joining member having the first opening and the second opening has been described. However, the joining member may have only one opening, or may have three or more openings. In planar see-through, two or more openings overlapping only one chip may be provided, or only one opening overlapping two chips may be provided. The number of openings can be changed as appropriate.

In this embodiment, an example in which the electronic device includes two acoustic wave chips has been described. However, the number of acoustic wave chips included in the electronic device may be only one, or may be three or more. Furthermore, in the embodiments, the elastic wave chip in which the first chip and the second chip are 1-port resonators has been described. However, the first chip and/or the second chip may also be two-port resonators. That is, the first chip and the second chip do not necessarily have to be the same elastic wave chip. Further, the electronic device in the present disclosure may include electronic components (electronic elements) other than elastic waves.

In the embodiments, examples have been described in which the sealing portion has a first extension and a second extension extending along the surface of the substrate. However, the first extension and the second extension are not essential components in the seal. The first extension and/or the second extension can be eliminated if desired. The sealing portion may cover only the outer peripheral surfaces (side surfaces) of the first chip and/or the second chip.

1, 101, 201, 301... electronic device 3A, 3B... first bump 3C, 3D... second bump 10, 110, 210, 310... base structure 20, 320... base 21a... first surface 22A, 22B... second 1 pads 22C, 22D... 2nd pads 30, 130, 230... joining members 30a, 130a, 230a... first openings 30b, 130b, 230b... second openings 31a, 131a, 231a... inner walls 32a, 132a, 232a... Inner wall 40... First chip 50... Second chip 60... Sealing part

Claims (11)

a substrate having a first surface and a first pad located on the first surface;
a joining member joined to the first surface and having a first opening surrounding the first pad;
a first chip facing the first surface through the first opening and connected to the first pad;
a sealing portion that covers the outer peripheral surface of the first chip and is bonded to the base via the bonding member;
has
The glass transition temperature of the bonding member is higher than the glass transition temperature of the sealing portion,
a coefficient of linear expansion of the joining member is smaller than a coefficient of linear expansion of the base;
The glass transition temperature of the joining member is higher than the glass transition temperature of the substrate.
electronic device. The electronic device according to claim 1, wherein the joining member has a linear expansion coefficient smaller than that of the sealing portion. the first chip has a first facing surface facing the first surface of the base, and a first terminal located on the first facing surface and connected to the first pad;
The electronic device according to any one of claims 1 and 2 , wherein the first opposing surface is exposed from the sealing portion. 4. Any one of claims 1 to 3 , wherein the first chip has a portion positioned outside the first opening formed in the joining member when seen from above the first surface. Electronic device as described. 4. The electronic device according to any one of claims 1 to 3 , wherein the first chip is surrounded by the inner wall of the first opening when viewed from above the first surface. 4. The electronic device according to any one of claims 1 to 3 , wherein a side surface of the first chip overlaps an inner wall of the first opening when viewed from above the first surface. The electronic device according to any one of claims 1 to 6 , wherein the sealing portion has a portion bonded to the inner wall of the first opening formed in the bonding member. The electronic device according to any one of claims 1 to 7, wherein the joining member includes a reinforcing material and a base material impregnated with the reinforcing material. The electronic device according to claim 8 , wherein the reinforcing material is glass cloth. a second pad located on the first surface;
a second chip having a second facing surface facing the first surface and a second terminal located on the second facing surface;
has
The electronic device according to any one of claims 1 to 9 , wherein the second terminal is exposed from the sealing portion and connected to the second pad. The joint member has a second opening at a location where the second pad is positioned,
11. The electronic device according to claim 10 , wherein said second chip is connected to said second pad through said second opening.

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