JP7152926B2 - holding device - Google Patents

Description

The technology disclosed in this specification relates to a holding device that holds an object.

For example, an electrostatic chuck is used as a holding device for holding a wafer when manufacturing semiconductors. An electrostatic chuck comprises a ceramic member having a surface (hereinafter referred to as an "adsorption surface") substantially perpendicular to a predetermined direction (hereinafter referred to as a "first direction"), and a chuck disposed inside the ceramics member. The wafer is attracted to and held by the attraction surface of the ceramic member using electrostatic attraction generated by applying a voltage to the chuck electrode.

If the temperature of the wafer held on the attraction surface of the electrostatic chuck does not reach the desired temperature, the precision of each process (film formation, etching, etc.) on the wafer may decrease. The ability to control the distribution is required. Therefore, when an electrostatic chuck is used, for example, by heating with a heater electrode arranged inside the ceramic member, the temperature distribution of the attraction surface of the ceramic member (and thus the temperature distribution of the wafer held on the attraction surface) is controlled. ) is performed. In addition, inside the ceramic member, the heater electrode is arranged at a position spaced apart from the chucking surface in the first direction as compared with the chuck electrode. In some cases, a driver electrode electrically connected to the heater electrode is provided inside the ceramic member. placed in the position

In addition, in order to improve the heat transfer between the ceramic member and the wafer and further improve the controllability of the temperature distribution of the wafer, an inert gas such as helium gas is introduced into the space between the adsorption surface of the ceramic member and the surface of the wafer. A technique for supplying is known (see, for example, Patent Document 1). In this technique, inside the ceramic member, a gas ejection channel opening to the adsorption surface and a direction communicating with the gas ejection channel and substantially orthogonal to the first direction (hereinafter referred to as "surface direction") are provided. ) are formed. The inert gas supplied from the gas source flows into the gas ejection channel while being distributed in the plane direction through the gas distribution channel, and is ejected from the gas ejection holes that are the openings of the gas ejection channel to the adsorption surface. do. In this manner, the inert gas is supplied to the space existing between the attraction surface of the ceramic member and the surface of the wafer, and heat transfer between the ceramic member and the wafer can be enhanced.

JP 2017-157726 A

In the structure of a conventional electrostatic chuck, inside the ceramic member, the position of the gas distribution channel in the first direction is positioned between the chuck electrode and the heater electrode (that is, farther from the chucking surface than the chuck electrode). and closer to the attracting surface than the heater electrode). In addition, in the structure of a conventional electrostatic chuck in which a driver electrode is provided inside a ceramic member, the positions of the gas distribution channels in the first direction inside the ceramic member are the chuck electrode, the heater electrode, and the driver electrode. (that is, a position farther from the chucking surface than the chuck electrode and closer to the chucking surface than the heater electrode and the driver electrode). Therefore, in the structure of the conventional electrostatic chuck, the size (thickness) of the ceramic member in the first direction is large, and there is room for improvement in terms of miniaturization of the device, reduction of materials used, and the like.

Such a problem is not limited to electrostatic chucks that hold a wafer on the surface of a ceramic member, but is common to all holding devices that hold an object on the surface of a ceramic member.

This specification discloses a technology capable of solving the above-described problems.

The technology disclosed in this specification can be implemented, for example, in the following forms.

(1) The holding device disclosed in this specification includes a ceramic member having a first surface substantially orthogonal to a first direction, a chuck electrode disposed inside the ceramic member, and a 3, a heater electrode disposed at a position spaced from the first surface in the first direction relative to the chuck electrode and configured by a resistance heating element; a driver electrode disposed at a position spaced apart from the first surface by the chuck electrode and electrically connected to the heater electrode, and holding an object on the first surface of the ceramic member. In the apparatus, inside the ceramic member, there are provided a gas ejection channel opening to the first surface, and a gas distribution channel communicating with the gas ejection channel and extending in a direction orthogonal to the first direction. are formed, and at least a portion of the gas distribution channel overlaps at least one of the heater electrode and the driver electrode when viewed in a second direction perpendicular to the first direction. In this holding device, at least a portion of the gas distribution channel overlaps at least one of the heater electrode and the driver electrode when viewed in a second direction orthogonal to the first direction. That is, with respect to position in the first direction, the gas distribution channel has a portion co-located with at least one of the heater electrode and the driver electrode. Therefore, according to the present holding device, the size (thickness) of the ceramic member in the first direction is larger than that of the structure in which the gas distribution channel overlaps neither the heater electrode nor the driver electrode when viewed in the second direction. ) can be made smaller, and the device can be made smaller and the materials used can be reduced.

(2) In the above holding device, at least a portion of the gas distribution channel may overlap both the heater electrode and the driver electrode when viewed from the second direction. According to this holding device, at least a portion of the gas distribution channel overlaps both the heater electrode and the driver electrode when viewed in the second direction orthogonal to the first direction. That is, with respect to position in the first direction, the gas distribution channel has a portion co-located with the heater electrode and a portion co-located with the driver electrode. Therefore, according to the present holding device, the size (thickness) of the ceramic member in the first direction is larger than that of the structure in which the gas distribution channel overlaps neither the heater electrode nor the driver electrode when viewed in the second direction. ) can be effectively reduced, and the miniaturization of the device and the reduction of the materials used can be effectively realized.

(3) Another holding device disclosed in this specification includes: a ceramic member having a first surface substantially orthogonal to a first direction; a chuck electrode disposed inside the ceramic member; a heater electrode disposed at a position spaced apart from the first surface in the first direction than the chuck electrode in the interior of the ceramic member and configured by a resistance heating element, wherein the first surface of the ceramic member In the holding device for holding an object thereon, inside the ceramic member, there are provided a gas ejection channel opening to the first surface, and a gas ejection channel communicating with the gas ejection channel and perpendicular to the first direction. A gas distribution channel extending in a direction is formed, and at least a portion of the gas distribution channel overlaps the heater electrode when viewed in a second direction orthogonal to the first direction. In this holding device, at least a portion of the gas distribution channel overlaps the heater electrode when viewed in a second direction perpendicular to the first direction. That is, with respect to position in the first direction, the gas distribution channel has a portion co-located with the heater electrode. Therefore, according to this holding device, the size (thickness) of the ceramic member in the first direction can be reduced compared to the configuration in which the gas distribution channel does not overlap the heater electrode when viewed in the second direction. It is possible to reduce the size of the device and the amount of materials used.

It should be noted that the technology disclosed in this specification can be implemented in various forms, for example, in the form of a holding device, an electrostatic chuck, a manufacturing method thereof, and the like.

1 is a perspective view schematically showing an external configuration of an electrostatic chuck 10 according to an embodiment; FIG. It is an explanatory view showing roughly the XZ section composition of electrostatic chuck 10 in an embodiment.

A. Embodiment:
A-1. Configuration of electrostatic chuck 10:
FIG. 1 is a perspective view schematically showing the external configuration of an electrostatic chuck 10 according to this embodiment, and FIG. 2 is an explanatory view schematically showing the XZ cross-sectional configuration of the electrostatic chuck 10 according to this embodiment. . Each figure shows mutually orthogonal XYZ axes for specifying directions. In this specification, for the sake of convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. may be Also, in this specification, a direction perpendicular to the Z-axis direction is referred to as a "plane direction".

The electrostatic chuck 10 is a device that attracts and holds the wafer W and the focus ring FR by electrostatic attraction, and is used, for example, in a vacuum chamber of a semiconductor manufacturing device. The electrostatic chuck 10 includes a central electrostatic chuck portion 100 that mainly holds the wafer W, and an outer peripheral electrostatic chuck portion 200 that mainly holds the focus ring FR. Note that the central electrostatic chuck portion 100 and the peripheral electrostatic chuck portion 200 are installed on a common support member (not shown). The electrostatic chuck 10, the central electrostatic chuck part 100 and/or the peripheral electrostatic chuck part 200 correspond to the holding device in the claims, and the wafer W and/or the focus ring FR are the objects in the claims. corresponds to

A-2. Configuration of the central electrostatic chuck unit 100:
A-2-1. Basic configuration of the central electrostatic chuck unit 100:
The central electrostatic chuck portion 100 is a substantially circular member when viewed in the Z-axis direction. The central electrostatic chuck portion 100 includes a central ceramic member 110 and a central base member 120 arranged side by side in a predetermined arrangement direction (vertical direction (Z-axis direction) in this embodiment). The central ceramics member 110 and the central base member 120 are arranged such that the lower surface S12 of the central ceramics member 110 and the upper surface S13 of the central base member 120 face each other in the arrangement direction with a central joint portion 130, which will be described later, interposed therebetween. . That is, the central base member 120 is arranged such that the upper surface S13 of the central base member 120 is positioned on the lower surface S12 side of the central ceramics member 110 .

The central ceramics member 110 is a substantially circular plate-like member as viewed in the Z-axis direction, and is made of ceramics (for example, alumina, aluminum nitride, or the like). In this embodiment, the central ceramic member 110 has a notch formed along the outer periphery on the upper side, and the diameter of the upper surface (hereinafter referred to as "central attraction surface") S11 is slightly larger than the diameter of the lower surface S12. It's getting smaller. The diameter of the central attraction surface S11 of the central ceramic member 110 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the central ceramic member 110 is, for example, about 1 mm to 10 mm. The central ceramic member 110 corresponds to the ceramic member in the claims.

The central attraction surface S11 of the central ceramic member 110 is a substantially circular surface substantially perpendicular to the Z-axis direction. The central attraction surface S11 corresponds to the first surface in the claims, and the Z-axis direction corresponds to the first direction in the claims.

As shown in FIG. 2, inside the central ceramic member 110 is disposed a central chuck electrode 140 made of a conductive material (eg, tungsten, molybdenum, platinum, etc.). The shape of the central chuck electrode 140 as viewed in the Z-axis direction is, for example, substantially circular. When a voltage is applied to the central chuck electrode 140 from a chucking power source (not shown), electrostatic attraction is generated, and the wafer W is attracted and fixed to the central attraction surface S11 of the central ceramics member 110 by this electrostatic attraction. The central chuck electrode 140 corresponds to the chuck electrode in the claims.

Also inside the central ceramic member 110 are a plurality of central heater electrodes 150 each made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.) and a plurality of heater electrodes 150 for supplying power to each central heater electrode 150 . A central driver electrode 151 and various vias 154, 155 are located. In the present embodiment, the positions of the plurality of central heater electrodes 150 in the Z-axis direction are substantially the same, and are positioned farther away from the central chucking surface S11 than the central chuck electrode 140 (that is, from the central chuck electrode 140). lower side). In addition, in the present embodiment, the positions of the plurality of central driver electrodes 151 in the Z-axis direction are substantially the same, and are positioned further apart from the central chucking surface S11 than the central chucking electrode 140 (that is, the central chucking electrode 140). 140). In the present embodiment, the positions of the plurality of central driver electrodes 151 in the Z-axis direction are positions further away from the central attraction surface S11 than the plurality of central heater electrodes 150 (that is, below the central heater electrode 150). be. These configurations will be described in detail later. The central heater electrode 150 corresponds to the heater electrode in the claims, and the central driver electrode 151 corresponds to the driver electrode in the claims.

The central base member 120 is, for example, a substantially circular planar plate-like member having the same diameter as the central ceramic member 110 or having a larger diameter than the central ceramic member 110, and is made of, for example, metal (aluminum, aluminum alloy, etc.). . The diameter of the central base member 120 is, for example, about 220 mm to 550 mm (usually 220 mm to 350 mm), and the thickness of the central base member 120 is, for example, about 20 mm to 40 mm.

The central base member 120 is joined to the central ceramic member 110 by a central joint portion 130 arranged between the lower surface S12 of the central ceramic member 110 and the upper surface S13 of the central base member 120. As shown in FIG. The central joint portion 130 is made of an adhesive such as silicone-based resin, acrylic-based resin, or epoxy-based resin. The thickness of the central joint portion 130 is, for example, about 0.1 mm to 1 mm.

A coolant channel 121 is formed inside the central base member 120 . When a coolant (for example, a fluorine-based inert liquid, water, or the like) is caused to flow through the coolant channel 121 , the central base member 120 is cooled, and the central base member 120 and the central ceramics member 110 are cooled via the central joint portion 130 . The central ceramics member 110 is cooled by the heat transfer (heat extraction) of the central ceramics member 110, and the wafer W held on the central adsorption surface S11 of the central ceramics member 110 is cooled. Thereby, control of the temperature distribution of the wafer W is realized.

A-2-2. Configuration of Central Heater Electrode 150 and Configuration for Powering Central Heater Electrode 150:
Next, the configuration of central heater electrode 150 and the configuration for power supply to central heater electrode 150 will be described in detail. As described above, the central ceramic member 110 includes a plurality of central heater electrodes 150 composed of resistance heating elements, a plurality of central driver electrodes 151 for supplying power to the central heater electrodes 150, and various vias 154 and 155. and are placed. In addition, the central electrostatic chuck portion 100 is provided with other components for supplying power to the central heater electrodes 150 (such as power supply terminals 153 accommodated in terminal holes 156, which will be described later). Note that FIG. 2 shows only part of these configurations.

One end of each central heater electrode 150 is electrically connected to one central driver electrode 151 via via 154 and the other end of each central heater electrode 150 is electrically connected to one other via via 154 . It is electrically connected to the central driver electrode 151 .

A plurality of terminal holes 156 are formed in the central electrostatic chuck portion 100 . Each terminal hole 156 includes a through hole penetrating the central base member 120 from the upper surface S13 to the lower surface S14, a through hole penetrating the central joint portion 130 in the vertical direction, and a lower surface S12 side of the central ceramic member 110. A recess is an integral hole formed by communicating with each other. Further, power supply pads 152 made of a conductive material are formed at positions corresponding to the terminal holes 156 on the lower surface S12 of the central ceramic member 110 (positions overlapping the terminal holes 156 in the Z-axis direction). . Power supply pad 152 is electrically connected to central driver electrode 151 through via 155 .

Each terminal hole 156 accommodates a power supply terminal 153 made of a conductive material. The power supply terminal 153 is joined to the power supply pad 152 by, for example, brazing. Each power supply terminal 153 is electrically connected to a heater power source (not shown).

In such a configuration, each central heater electrode 150 is connected in parallel to the heater power supply. When a voltage is applied from the heater power source to the central heater electrode 150 through the power supply terminal 153, the power supply pad 152, the via 155, the central driver electrode 151 and the via 154, the central heater electrode 150 generates heat. As a result, the central ceramic member 110 on which the central heater electrode 150 is arranged is heated, thereby controlling the temperature distribution of the central attraction surface S11 of the central ceramic member 110 (and thus controlling the temperature distribution of the wafer W held on the central attraction surface S11). control) is realized. In the present embodiment, since the central heater electrodes 150 are connected in parallel to the heater power supply, the central heater electrodes 150 of the central ceramics member 110 are arranged in units of segments (called segments). Control of the temperature distribution of the attraction surface S11 (that is, temperature distribution control in finer units) can be realized.

A-2-3. Configuration for supplying an inert gas to the space between the central ceramic member 110 and the wafer W:
The central electrostatic chuck part 100 has a central chucking surface S11 of the central ceramics member 110 and the wafer W in order to improve the heat transfer between the central ceramics member 110 and the wafer W and to further improve the controllability of the temperature distribution of the wafer W. It has a configuration for supplying an inert gas to the space existing between the surface. The configuration will be described below. In this embodiment, helium gas is used as the inert gas.

A continuous wall-like projection (not shown) is formed near the outer edge of the central attraction surface S11 of the central ceramic member 110 . The wall-like protrusion is also called a seal band. The shape of the wall-like protrusion as viewed in the Z-axis direction is, for example, a substantially annular shape centered on the central point of the central attraction surface S11 of the central ceramics member 110 . In addition, a plurality of independent columnar projections (not shown) are formed in a region inside the wall-shaped projections on the central attraction surface S11 of the central ceramic member 110 . The shape of each columnar protrusion as viewed in the Z-axis direction is, for example, substantially circular. In addition, in the area inside the wall-like protrusions on the central attraction surface S11 of the central ceramic member 110, the portions where the columnar protrusions are not formed are recesses. The heights of the wall-shaped projections and the columnar projections are, for example, about 10 μm to 20 μm. The wafer W is supported by the wall-like protrusions and columnar protrusions on the central suction surface S11 of the central ceramics member 110 . In a state in which the wafer W is supported by the wall-shaped projections and the columnar projections, there is a gap between the surface (lower surface) of the wafer W and the central attraction surface S11 of the central ceramic member 110 (the recessed portions where the columnar projections are not formed). , there is a space.

As shown in FIG. 2, inside the central ceramic member 110, there are a plurality of central gas ejection passages 171 opening to the central adsorption surface S11, and one or more central gas ejection passages 171 communicating with each central gas ejection passage 171. A distribution channel 172 is formed. Each central gas ejection channel 171 extends substantially parallel to the Z-axis direction. Further, each central gas distribution channel 172 extends in the planar direction (direction orthogonal to the Z-axis direction). The shape of the central gas distribution channel 172 as viewed in the Z-axis direction is, for example, an annular shape. Also, in the central electrostatic chuck portion 100, a central gas supply channel 170 extending substantially parallel to the Z-axis direction from the lower surface S14 of the central base member 120 to the inside of the central ceramics member 110 is formed. A central gas supply channel 170 communicates with each central gas distribution channel 172 . In this embodiment, the area of the cross section orthogonal to the extending direction of the central gas distribution channel 172 is larger than the area of the cross section orthogonal to the extending direction of the central gas ejection channel 171 .

When helium gas is supplied from a helium gas source (not shown) to the central gas supply channel 170, the supplied helium gas flows from the central gas supply channel 170 into the central gas distribution channel 172, whereupon the central gas It flows into the central gas ejection passages 171 while being distributed in the planar direction through the distribution passages 172, and is ejected from the central gas ejection holes that are the openings of the respective central gas ejection passages 171 to the central adsorption surface S11. In this manner, the helium gas is supplied to the space existing between the central attraction surface S11 of the central ceramic member 110 and the surface of the wafer W, and the heat transfer between the central attraction surface S11 and the wafer W is enhanced. The central gas ejection channel 171 corresponds to the gas ejection channel in the claims, and the central gas distribution channel 172 corresponds to the gas distribution channel in the claims.

In this embodiment, at least a portion of the central gas distribution channel 172 overlaps both the central heater electrode 150 and the central driver electrode 151 when viewed in a particular direction orthogonal to the Z-axis direction (e.g., the X-axis direction). there is That is, with respect to the position in the Z-axis direction, the central gas distribution channel 172 has a portion at the same position as the central heater electrode 150 and a portion at the same position as the central driver electrode 151 . Here, the fact that (at least a part of) the central gas distribution channel 172 overlaps with both the central heater electrode 150 and the central driver electrode 151 when viewed in a specific direction perpendicular to the Z-axis direction means that the central gas It does not mean that the distribution channel 172 is in contact with the central heater electrode 150 and the central driver electrode 151 . That is, central gas distribution channel 172 is spaced apart from central heater electrode 150 and central driver electrode 151 . The above specific direction corresponds to the second direction in the scope of claims.

A-3. Configuration of Perimeter Electrostatic Chuck Part 200:
A-3-1. Basic Configuration of Perimeter Electrostatic Chuck Unit 200:
The outer peripheral electrostatic chuck portion 200 is a substantially annular member that surrounds the central electrostatic chuck portion 100 when viewed in the Z-axis direction. A slight gap exists between the peripheral electrostatic chuck portion 200 and the central electrostatic chuck portion 100 . The outer peripheral electrostatic chuck section 200 includes an outer peripheral ceramic member 210 and an outer peripheral base member 220 arranged side by side in a predetermined arrangement direction (vertical direction (Z-axis direction) in this embodiment). The outer peripheral ceramics member 210 and the outer peripheral base member 220 are arranged such that the lower surface S22 of the outer peripheral ceramics member 210 and the upper surface S23 of the outer peripheral base member 220 face each other in the arrangement direction with the outer peripheral joint portion 230 described later interposed therebetween. . That is, the outer peripheral base member 220 is arranged such that the upper surface S23 of the outer peripheral base member 220 is located on the lower surface S22 side of the outer peripheral ceramics member 210 .

The outer ceramic member 210 is a substantially annular plate member when viewed in the Z-axis direction, and is made of ceramics (for example, alumina, aluminum nitride, or the like). The inner diameter of the outer ceramic member 210 is, for example, about 222 mm to 552 mm (usually about 222 mm to 352 mm), and the outer diameter of the outer ceramic member 210 is, for example, about 232 mm to 592 mm (usually about 232 mm to 392 mm). The thickness of the member 210 is, for example, about 1 mm to 5 mm. The peripheral ceramics member 210 corresponds to the ceramics member in the claims.

An upper surface S21 of the outer peripheral ceramics member 210 (hereinafter referred to as "outer peripheral attracting surface") is a substantially annular surface that is substantially orthogonal to the Z-axis direction. The outer peripheral attracting surface S21 corresponds to the first surface in the claims.

As shown in FIG. 2, a peripheral chuck electrode 240 made of a conductive material (eg, tungsten, molybdenum, platinum, etc.) is arranged inside the peripheral ceramic member 210 . The shape of the outer peripheral chuck electrode 240 as viewed in the Z-axis direction is, for example, a substantially annular shape. When a voltage is applied to the outer peripheral chuck electrode 240 from a power supply for chucking (not shown), electrostatic attraction is generated, and the focus ring FR is attracted and fixed to the outer peripheral attraction surface S21 of the outer ceramic member 210 by this electrostatic attraction. . The peripheral chuck electrode 240 corresponds to the chuck electrode in the claims.

Note that the focus ring FR is a substantially annular member arranged so as to surround the outer periphery of the wafer W when viewed in the Z-axis direction, and is made of crystal or silicone, for example. By arranging the focus ring FR, it is possible to suppress the reaction gas and plasma from concentrating on the outermost periphery of the wafer W during each process (film formation, etching, etc.) on the wafer W. A difference in etching rate between the central portion and the outermost peripheral portion can be suppressed. In addition, by controlling the temperature distribution of the focus ring FR to make it higher than the temperature of the wafer W, impurities such as dust and dirt can be attracted to the focus ring FR, and adhesion of impurities to the wafer W can be suppressed. be able to.

Inside the outer ceramic member 210 are also a plurality of outer heater electrodes 250 each made of a conductive material (eg, tungsten, molybdenum, platinum, etc.) and a plurality of outer heater electrodes 250 for supplying power to each outer heater electrode 250 . peripheral driver electrode 251 and various vias 254 and 255 are arranged. In the present embodiment, the positions of the plurality of outer peripheral heater electrodes 250 in the Z-axis direction are substantially the same, and are further apart from the outer peripheral chucking surface S21 than the outer peripheral chucking electrode 240 (that is, the position is greater than the outer peripheral chucking electrode 240). lower side). Further, in the present embodiment, the positions of the plurality of outer peripheral driver electrodes 251 in the Z-axis direction are substantially the same, and are positioned further apart from the outer peripheral chucking surface S21 than the outer peripheral chucking electrodes 240 (that is, the outer peripheral chucking electrodes 240). In the present embodiment, the positions of the plurality of outer peripheral driver electrodes 251 in the Z-axis direction are positions further away from the outer peripheral attracting surface S21 than the plurality of outer peripheral heater electrodes 250 (that is, below the outer peripheral heater electrodes 250). be. These configurations will be described in detail later. The peripheral heater electrode 250 corresponds to the heater electrode in the claims, and the peripheral driver electrode 251 corresponds to the driver electrode in the claims.

The outer peripheral base member 220 is, for example, a plate-like member having a substantially annular plane and having the same diameter as the outer peripheral ceramic member 210 or having a larger diameter than the outer peripheral ceramic member 210, and is made of, for example, metal (aluminum, aluminum alloy, etc.). there is The inner diameter of the outer peripheral base member 220 is, for example, about 222 mm to 552 mm (usually 222 mm to 352 mm), and the outer diameter of the outer peripheral base member 220 is, for example, about 232 mm to 592 mm (usually 232 mm to 392 mm). is, for example, about 20 mm to 40 mm.

The outer peripheral base member 220 is joined to the outer peripheral ceramics member 210 by the outer peripheral joining portion 230 arranged between the lower surface S22 of the outer peripheral ceramics member 210 and the upper surface S23 of the outer peripheral base member 220 . The outer peripheral joint portion 230 is made of an adhesive such as silicone resin, acrylic resin, or epoxy resin. The thickness of the outer peripheral joint portion 230 is, for example, about 0.1 mm to 1 mm.

A coolant channel 221 is formed inside the outer peripheral base member 220 . When a coolant (for example, a fluorine-based inert liquid, water, or the like) is caused to flow through the coolant channel 221 , the outer peripheral base member 220 is cooled, and the outer peripheral base member 220 and the outer peripheral ceramics member 210 are cooled via the outer peripheral joint portion 230 . This heat transfer (heat extraction) cools the outer ceramic member 210 and cools the focus ring FR held on the outer outer attracting surface S21 of the outer ceramic member 210 . This realizes control of the temperature distribution of the focus ring FR.

A-3-2. Configuration of Perimeter Heater Electrode 250 and Configuration for Power Supply to Perimeter Heater Electrode 250:
Next, the configuration of the outer heater electrode 250 and the configuration for supplying power to the outer heater electrode 250 will be described in detail. As described above, the outer ceramic member 210 includes a plurality of outer heater electrodes 250 composed of resistance heating elements, a plurality of outer driver electrodes 251 for supplying power to the outer heater electrodes 250, and various vias 254 and 255. and are placed. Further, the outer peripheral electrostatic chuck portion 200 is provided with other components for supplying power to the outer peripheral heater electrodes 250 (such as power supply terminals 253 accommodated in terminal holes 256 to be described later). Note that FIG. 2 shows only part of these configurations.

One end of each peripheral heater electrode 250 is electrically connected to one peripheral driver electrode 251 via a via 254, and the other end of each peripheral heater electrode 250 is electrically connected to another driver electrode 251 via a via 254. It is electrically connected to the peripheral driver electrode 251 .

A plurality of terminal holes 256 are formed in the outer peripheral electrostatic chuck portion 200 . Each terminal hole 256 includes a through hole that penetrates the outer peripheral base member 220 from the upper surface S23 to the lower surface S24, a through hole that vertically penetrates the outer peripheral joint portion 230, and a lower surface S22 side of the outer peripheral ceramics member 210. A recess is an integral hole formed by communicating with each other. Further, power supply pads 252 made of a conductive material are formed at positions corresponding to the terminal holes 256 (positions overlapping the terminal holes 256 in the Z-axis direction) on the lower surface S22 of the outer peripheral ceramics member 210. . The power supply pads 252 are electrically connected to the peripheral driver electrodes 251 through vias 255 .

Each terminal hole 256 accommodates a power supply terminal 253 made of a conductive material. The power supply terminal 253 is joined to the power supply pad 252 by, for example, brazing. Each power supply terminal 253 is electrically connected to a heater power supply (not shown).

In such a configuration, each peripheral heater electrode 250 is connected in parallel to the heater power supply. When a voltage is applied from the heater power source to the outer heater electrode 250 through the power supply terminal 253, the power supply pad 252, the via 255, the outer driver electrode 251, and the via 254, the outer heater electrode 250 generates heat. As a result, the outer ceramic member 210 on which the outer heater electrode 250 is arranged is heated, and the temperature distribution of the outer peripheral attraction surface S21 of the outer peripheral ceramic member 210 is controlled (and the temperature distribution of the focus ring FR held by the outer peripheral attraction surface S21 is controlled). control) is realized. In this embodiment, since the outer heater electrodes 250 are connected in parallel to the heater power supply, the outer circumference of each portion (called a segment) of the outer ceramic member 210 where the outer heater electrodes 250 are arranged Control of the temperature distribution of the attraction surface S21 (that is, temperature distribution control in finer units) can be realized.

A-3-3. Configuration for supplying inert gas to the space between the outer ceramic member 210 and the focus ring FR:
The outer electrostatic chuck portion 200 has an outer attracting surface S21 of the outer ceramic member 210 and the focus in order to enhance the heat transfer between the outer peripheral ceramic member 210 and the focus ring FR and further enhance the controllability of the temperature distribution of the focus ring FR. It has a structure for supplying an inert gas to the space existing between it and the surface of the ring FR. The configuration will be described below. In this embodiment, helium gas is used as the inert gas.

A continuous wall-like projection (not shown) is formed in the vicinity of the outer edge (the outer peripheral edge and the inner peripheral edge) of the outer peripheral attracting surface S21 of the outer ceramic member 210 . The wall-like protrusion is also called a seal band. The shape of each wall-shaped convex portion as viewed in the Z-axis direction is, for example, a substantially annular shape centered on the center point of the outer peripheral edge of the outer peripheral attraction surface S21. In addition, a plurality of independent columnar protrusions (not shown) are formed in the area surrounded by the wall-like protrusions on the outer peripheral attracting surface S21 of the outer peripheral ceramic member 210 . The shape of each columnar protrusion as viewed in the Z-axis direction is, for example, substantially circular. In addition, in the area surrounded by the wall-like protrusions on the outer peripheral attracting surface S21 of the outer ceramic member 210, the portions where the columnar protrusions are not formed are recesses. The heights of the wall-shaped projections and the columnar projections are, for example, about 10 μm to 20 μm. The focus ring FR is supported by the wall-shaped protrusions and the columnar protrusions on the outer peripheral suction surface S21 of the outer peripheral ceramics member 210 . In a state in which the focus ring FR is supported by the wall-shaped projections and the columnar projections, the surface (lower surface) of the focus ring FR and the outer peripheral attraction surface S21 of the outer peripheral ceramic member 210 (recesses in which no columnar projections are formed). There will be a space between

As shown in FIG. 2, inside the outer ceramic member 210, there are a plurality of outer peripheral gas ejection passages 271 opening to the outer peripheral adsorption surface S21, and one or more outer peripheral gas ejection passages 271 communicating with each of the outer peripheral gas ejection passages 271. A distribution channel 272 is formed. Each outer peripheral gas ejection channel 271 extends substantially parallel to the Z-axis direction. In addition, each outer peripheral gas distribution channel 272 extends in the plane direction (the direction orthogonal to the Z-axis direction). The shape of the outer peripheral gas distribution channel 272 as viewed in the Z-axis direction is, for example, an annular shape. Further, in the outer peripheral electrostatic chuck portion 200, an outer peripheral gas supply passage 270 extending substantially parallel to the Z-axis direction from the lower surface S24 of the outer peripheral base member 220 to the inside of the outer peripheral ceramics member 210 is formed. The peripheral gas supply channel 270 communicates with each peripheral gas distribution channel 272 . In this embodiment, the area of the cross section orthogonal to the extending direction of the outer peripheral gas distribution channel 272 is larger than the area of the cross section orthogonal to the extending direction of the outer peripheral gas ejection channel 271 .

When helium gas is supplied from a helium gas source (not shown) to the outer peripheral gas supply channel 270, the supplied helium gas flows from the outer peripheral gas supply channel 270 into the outer peripheral gas distribution channel 272, whereupon the outer peripheral gas It flows into the outer peripheral gas ejection passages 271 while being distributed in the planar direction through the distribution passages 272, and is ejected from the outer peripheral gas ejection holes that are the openings of the outer peripheral gas ejection passages 271 to the outer peripheral adsorption surface S21. In this manner, the helium gas is supplied to the space existing between the outer peripheral attraction surface S21 of the outer peripheral ceramic member 210 and the surface of the focus ring FR, thereby increasing the heat transfer between the outer peripheral attraction surface S21 and the focus ring FR. be done. The outer peripheral gas ejection channel 271 corresponds to the gas ejection channel in the claims, and the outer peripheral gas distribution channel 272 corresponds to the gas distribution channel in the claims.

In this embodiment, at least a portion of the outer peripheral gas distribution channel 272 overlaps with both the outer heater electrode 250 and the outer driver electrode 251 when viewed in a specific direction orthogonal to the Z-axis direction (for example, the X-axis direction). there is That is, regarding the position in the Z-axis direction, the outer gas distribution channel 272 has a portion at the same position as the outer heater electrode 250 and a portion at the same position as the outer driver electrode 251 . Here, the fact that (at least a part of) the outer peripheral gas distribution channel 272 overlaps both the outer peripheral heater electrode 250 and the outer peripheral driver electrode 251 when viewed in a specific direction orthogonal to the Z-axis direction means that the outer peripheral gas It does not mean that the distribution channel 272 is in contact with the outer heater electrode 250 and the outer driver electrode 251 . That is, the outer gas distribution channel 272 is spaced apart from the outer heater electrode 250 and the outer driver electrode 251 . The above specific direction corresponds to the second direction in the scope of claims.

A-4. Manufacturing method of electrostatic chuck 10:
A method for manufacturing the central electrostatic chuck portion 100 that constitutes the electrostatic chuck 10 of the present embodiment is, for example, as follows. First, a plurality of ceramic green sheets are produced, and predetermined ceramic green sheets are processed in a predetermined manner. The predetermined processing includes, for example, printing of metallized paste for forming the central heater electrode 150, central driver electrode 151, power supply pad 152, etc., drilling holes for forming various vias 154 and 155, and filling with metallized paste; Holes for forming the central gas ejection channel 171, the central gas distribution channel 172, and the like can be mentioned. These ceramic green sheets are laminated, thermocompressed, and processed such as cutting to produce a ceramic green sheet laminate. The laminated body of the produced ceramic green sheets is sintered, and a precise outer shape is finished by polishing to produce a central ceramic sintered body.

Next, on the surface of the produced central ceramic sintered body, a mask is placed to cover the portions corresponding to the wall-shaped projections and the column-shaped projections, and shot blasting is performed by projecting particles of ceramics or the like, for example. A wall-like protrusion and a columnar protrusion are formed. Thereby, the central ceramics member 110 is produced. Next, the power supply terminal 153 is joined to the power supply pad 152 formed on the central ceramic member 110 by, for example, brazing. Next, the central ceramic member 110 and the central base member 120 are joined together using, for example, a sheet-like central joining portion 130 . The central electrostatic chuck portion 100 constituting the electrostatic chuck 10 of the present embodiment is manufactured mainly by the above steps.

Also, the method of manufacturing the outer peripheral electrostatic chuck portion 200 that constitutes the electrostatic chuck 10 of the present embodiment is the same as the method of manufacturing the central electrostatic chuck portion 100 described above, and is as follows, for example. First, a plurality of ceramic green sheets are produced, and predetermined ceramic green sheets are processed in a predetermined manner. The predetermined processing includes, for example, printing of metallized paste for forming the peripheral heater electrode 250, the peripheral driver electrode 251, the power supply pad 252, and the like, drilling holes for forming various vias 254 and 255, and filling with the metallized paste; Holes for forming the outer peripheral gas jet flow path 271, the outer peripheral gas distribution flow path 272, and the like can be mentioned. These ceramic green sheets are laminated, thermocompressed, and processed such as cutting to produce a ceramic green sheet laminate. The laminate of ceramic green sheets thus produced is fired, and a precise outer shape is finished by polishing to fabricate a peripheral ceramic fired body.

Next, a mask is placed on the surface of the manufactured peripheral ceramic fired body to shield the portions corresponding to the wall-shaped projections and the columnar projections, and shot blasting is performed by projecting particles such as ceramics, for example. A wall-like protrusion and a columnar protrusion are formed. Thus, the peripheral ceramics member 210 is produced. Next, the power supply terminal 253 is joined to the power supply pad 252 formed on the outer ceramic member 210 by, for example, brazing. Next, the outer peripheral ceramic member 210 and the outer peripheral base member 220 are joined using, for example, a sheet-shaped outer peripheral joint portion 230 . The peripheral electrostatic chuck portion 200 that constitutes the electrostatic chuck 10 of the present embodiment is manufactured mainly through the above steps.

A-5. Effect of this embodiment:
As described above, the central electrostatic chuck portion 100 constituting the electrostatic chuck 10 of the present embodiment includes the central ceramic member 110 having the central attraction surface S11 substantially perpendicular to the Z-axis direction. It is a holding device that holds the wafer W on the central suction surface S11. The central electrostatic chuck portion 100 includes a central chuck electrode 140 arranged inside the central ceramic member 110 . Further, the central electrostatic chuck portion 100 includes a central heater electrode 150 and a central driver electrode 151 which are arranged inside the central ceramic member 110 at a position spaced apart from the central chucking surface S11 relative to the central chucking electrode 140 in the Z-axis direction. . The central heater electrode 150 is composed of a resistance heating element. Central driver electrode 151 is electrically connected to central heater electrode 150 . Further, inside the central ceramics member 110, there are a central gas ejection channel 171 that opens to the central adsorption surface S11, and a central gas ejection channel 171 that communicates with the central gas ejection channel 171 and extends in a direction perpendicular to the Z-axis direction (surface direction). A gas distribution channel 172 is formed. At least a portion of central gas distribution channel 172 overlaps both central heater electrode 150 and central driver electrode 151 when viewed in a particular direction perpendicular to the Z-axis direction.

As described above, in the central electrostatic chuck portion 100 constituting the electrostatic chuck 10 of the present embodiment, at least a portion of the central gas distribution channel 172 is the central heater electrode 150 when viewed in a specific direction orthogonal to the Z-axis direction. and the central driver electrode 151 . That is, with respect to the position in the Z-axis direction, the central gas distribution channel 172 has a portion at the same position as the central heater electrode 150 and a portion at the same position as the central driver electrode 151 . Therefore, according to the central electrostatic chuck portion 100 that constitutes the electrostatic chuck 10 of the present embodiment, the central gas distribution channel 172 does not overlap the central heater electrode 150 or the central driver electrode 151 when viewed in the specific direction. Compared to the configuration, the size (thickness) of the central ceramic member 110 in the Z-axis direction can be made smaller, and the miniaturization of the device and the reduction of materials used can be realized. Further, according to the central electrostatic chuck portion 100 constituting the electrostatic chuck 10 of the present embodiment, the size (thickness) of the central ceramic member 110 in the Z-axis direction can be reduced. can be easily substituted by the central base member 120 .

Further, the outer peripheral electrostatic chuck portion 200 constituting the electrostatic chuck 10 of the present embodiment includes an outer peripheral ceramic member 210 having an outer peripheral adsorption surface S21 substantially perpendicular to the Z-axis direction. A holding device for holding the focus ring FR thereon. The peripheral electrostatic chuck section 200 includes a peripheral chuck electrode 240 arranged inside the peripheral ceramics member 210 . Furthermore, the outer peripheral electrostatic chuck section 200 includes an outer peripheral heater electrode 250 and an outer peripheral driver electrode 251 which are arranged inside the outer peripheral ceramic member 210 at a position spaced apart from the outer peripheral chucking surface S21 relative to the outer peripheral chuck electrode 240 in the Z-axis direction. . The peripheral heater electrode 250 is composed of a resistance heating element. The peripheral driver electrode 251 is electrically connected to the peripheral heater electrode 250 . Further, inside the outer peripheral ceramic member 210, there are provided an outer peripheral gas ejection passage 271 that opens to the outer peripheral adsorption surface S21, and an outer periphery that communicates with the outer peripheral gas ejection passage 271 and extends in a direction perpendicular to the Z-axis direction (plane direction). A gas distribution channel 272 is formed. At least a portion of the outer gas distribution channel 272 overlaps both the outer heater electrode 250 and the outer driver electrode 251 when viewed in a particular direction orthogonal to the Z-axis direction.

As described above, in the outer peripheral electrostatic chuck portion 200 that constitutes the electrostatic chuck 10 of the present embodiment, at least a portion of the outer peripheral gas distribution channel 272 is the same as the outer peripheral heater electrode 250 when viewed in a specific direction orthogonal to the Z-axis direction. and the peripheral driver electrode 251 . That is, regarding the position in the Z-axis direction, the outer gas distribution channel 272 has a portion at the same position as the outer heater electrode 250 and a portion at the same position as the outer driver electrode 251 . Therefore, according to the outer peripheral electrostatic chuck portion 200 that constitutes the electrostatic chuck 10 of the present embodiment, the outer peripheral gas distribution channel 272 does not overlap the outer peripheral heater electrode 250 or the outer peripheral driver electrode 251 when viewed in the specific direction. The size (thickness) of the peripheral ceramics member 210 in the Z-axis direction can be reduced compared to the configuration, and the device can be made smaller and the materials used can be reduced. Further, according to the outer peripheral electrostatic chuck portion 200 constituting the electrostatic chuck 10 of the present embodiment, the size (thickness) of the outer peripheral ceramics member 210 in the Z-axis direction can be reduced, so that the plasma RF electrode can be used. can be easily substituted by the perimeter base member 220 .

B. Variant:
The technology disclosed in this specification is not limited to the above-described embodiments, and can be modified in various forms without departing from the scope of the invention. For example, the following modifications are possible.

The configuration of the electrostatic chuck 10 in the above embodiment is merely an example, and various modifications are possible. For example, in the central electrostatic chuck portion 100 that constitutes the electrostatic chuck 10 of the above embodiment, at least a portion of the central gas distribution channel 172 is positioned between the central heater electrode 150 and the central portion when viewed in a specific direction orthogonal to the Z-axis direction. Although it overlaps both the driver electrode 151, at least a portion of the central gas distribution channel 172 may overlap one of the central heater electrode 150 and the central driver electrode 151 and not the other. Even with this configuration, compared to the configuration in which the central gas distribution channel 172 overlaps neither the central heater electrode 150 nor the central driver electrode 151 when viewed from the above specific direction, the Z-axis direction of the central ceramic member 110 is reduced. It is possible to reduce the size (thickness) of the device, and it is possible to reduce the size of the device and the materials used.

Further, in the central electrostatic chuck portion 100 constituting the electrostatic chuck 10 of the above-described embodiment, the central driver electrode 151 is arranged inside the central ceramic member 110 . may not be placed. Even with such a configuration, if a configuration in which at least a portion of the central gas distribution channel 172 overlaps the central heater electrode 150 when viewed in a specific direction orthogonal to the Z-axis direction, the Compared to a configuration in which the gas distribution channel 172 does not overlap the central heater electrode 150, the size (thickness) of the central ceramics member 110 in the Z-axis direction can be reduced, and the device can be made smaller and the materials used can be reduced. can be realized.

Similarly, in the outer peripheral electrostatic chuck portion 200 that constitutes the electrostatic chuck 10 of the above-described embodiment, at least a portion of the outer peripheral gas distribution channel 272 overlaps with the outer peripheral heater electrode 250 when viewed in a specific direction orthogonal to the Z-axis direction. Although it overlaps with both the outer driver electrode 251, at least a portion of the outer gas distribution channel 272 may overlap with one of the outer heater electrode 250 and the outer driver electrode 251, but not with the other. Even with such a configuration, compared to the configuration in which the outer peripheral gas distribution channel 272 does not overlap with the outer peripheral heater electrode 250 or the outer peripheral driver electrode 251 when viewed in the above specific direction, the Z-axis direction of the outer peripheral ceramics member 210 is reduced. It is possible to reduce the size (thickness) of the device, and it is possible to reduce the size of the device and the materials used.

Further, in the outer peripheral electrostatic chuck portion 200 that constitutes the electrostatic chuck 10 of the above embodiment, the outer peripheral driver electrode 251 is arranged inside the outer peripheral ceramics member 210 . may not be placed. Even with such a configuration, if at least a portion of the outer peripheral gas distribution channel 272 overlaps with the outer peripheral heater electrode 250 when viewed in a specific direction orthogonal to the Z-axis direction, the outer periphery when viewed in the specific direction can be used. Compared to a configuration in which the gas distribution channel 272 does not overlap the outer heater electrode 250, the size (thickness) of the outer ceramic member 210 in the Z-axis direction can be reduced, and the device can be made smaller and the materials used can be reduced. can be realized.

Further, in the above-described embodiment, all the central driver electrodes 151 are at the same position in the Z-axis direction (that is, the plurality of central driver electrodes 151 are composed of a single layer). However, some of the central driver electrodes 151 may be at different positions (that is, multiple central driver electrodes 151 may be composed of multiple layers). The same is true for central heater electrode 150 . Also, the positional relationship between the central heater electrode 150 and the central driver electrode 151 in the Z-axis direction may be reversed.

Similarly, in the above-described embodiment, all the peripheral driver electrodes 251 are located at the same position in the Z-axis direction (that is, the plurality of peripheral driver electrodes 251 are composed of a single layer). ), some of the peripheral driver electrodes 251 may be located at different positions (that is, the plurality of peripheral driver electrodes 251 may be composed of multiple layers). The same applies to the peripheral heater electrode 250 . Also, the positional relationship between the outer heater electrode 250 and the outer driver electrode 251 in the Z-axis direction may be reversed.

Also, in the above embodiment, a plurality of central heater electrodes 150 are arranged inside the central ceramic member 110 , but a single central heater electrode 150 may be arranged inside the central ceramic member 110 . Similarly, in the above embodiment, a plurality of outer heater electrodes 250 are arranged inside the outer ceramic member 210 , but a single outer heater electrode 250 may be arranged inside the outer ceramic member 210 .

Further, in the above embodiment, the central electrostatic chuck portion 100 and the outer peripheral electrostatic chuck portion 200 are configured separately. good. For example, assuming that the central base member 120 and the outer peripheral base member 220 are integral members, and the central ceramics member 110 and the central base member 120 that are separate from each other are joined to the central base member 120 and the outer peripheral base member 220, respectively. good too. Alternatively, the central base member 120 and the perimeter base member 220 may be an integral member.

Further, in the above-described embodiment, a monopolar system in which one central chuck electrode 140 is provided inside the central ceramics member 110 is adopted, but a pair of central chucking electrodes 140 are provided inside the central ceramics member 110 . A bipolar method may also be employed. Similarly, in the above-described embodiment, a monopolar system in which one outer peripheral chuck electrode 240 is provided inside the outer peripheral ceramic member 210 is adopted, but a pair of outer peripheral chuck electrodes 240 are provided inside the outer peripheral ceramic member 210. A bipolar scheme may be employed.

Further, in the above embodiments, each via may be composed of a single via, or may be composed of a group of multiple vias. In the above embodiments, each via may have a single-layer structure consisting only of a via portion, or may have a multi-layer structure (for example, a structure in which a via portion, a pad portion, and a via portion are laminated). good too.

Further, the material for forming each member of the electrostatic chuck 10 of the above-described embodiment is merely an example, and various changes are possible.

Further, the present invention is not limited to the electrostatic chuck 10 configured from the central electrostatic chuck portion 100 and the outer peripheral electrostatic chuck portion 200, and the electrostatic chuck 10 configured only from the central electrostatic chuck portion 100, the outer peripheral electrostatic chuck portion 100, The same can be applied to the electrostatic chuck 10 configured only with the electrostatic chuck part 200 . Moreover, the present invention is not limited to electrostatic chucks, and can be applied to other holding devices that include a ceramic member and a chuck electrode and hold an object on the surface of the ceramic member.

10: Electrostatic Chuck 100: Central Electrostatic Chuck Part 110: Central Ceramic Member 120: Central Base Member 121: Coolant Channel 130: Central Joint Part 140: Central Chuck Electrode 150: Central Heater Electrode 151: Central Driver Electrode 152: Power Supply Pad 153: Power supply terminal 154, 155: Via 156: Terminal hole 170: Central gas supply channel 171: Central gas ejection channel 172: Central gas distribution channel 200: Peripheral electrostatic chuck part 210: Peripheral ceramic member 220: Peripheral base member 221: Coolant flow path 230: Peripheral junction 240: Peripheral chuck electrode 250: Peripheral heater electrode 251: Peripheral driver electrode 252: Power supply pad 253: Power supply terminal 254, 255: Via 256: Terminal hole 270: Peripheral gas Supply channel 271: Peripheral gas ejection channel 272: Peripheral gas distribution channel FR: Focus ring S11: Central adsorption surface S12: Lower surface S13: Upper surface S14: Lower surface S21: Peripheral adsorption surface S22: Lower surface S23: Upper surface S24: Lower surface W : Wafer

Claims (3)

a ceramic member having a first surface substantially orthogonal to the first direction;
a chuck electrode disposed inside the ceramic member;
a heater electrode, which is arranged inside the ceramic member at a position spaced apart from the first surface relative to the chuck electrode in the first direction and which is composed of a resistance heating element;
a driver electrode disposed inside the ceramic member at a position spaced from the first surface relative to the chuck electrode in the first direction and electrically connected to the heater electrode;
A holding device for holding an object on the first surface of the ceramic member,
Inside the ceramic member,
a gas ejection channel opening to the first surface;
a gas distribution channel communicating with the gas ejection channel and extending in a direction orthogonal to the first direction;
is formed and
At least a portion of the gas distribution channel overlaps at least one of the heater electrode and the driver electrode when viewed in a second direction perpendicular to the first direction,
A holding device characterized by: A holding device according to claim 1, wherein
When viewed in the second direction, at least a portion of the gas distribution channel overlaps both the heater electrode and the driver electrode.
A holding device characterized by: a ceramic member having a first surface substantially orthogonal to the first direction;
a chuck electrode disposed inside the ceramic member;
a heater electrode, which is arranged inside the ceramic member at a position spaced apart from the first surface relative to the chuck electrode in the first direction and which is composed of a resistance heating element;
A holding device for holding an object on the first surface of the ceramic member,
Inside the ceramic member,
a gas ejection channel opening to the first surface;
a gas distribution channel communicating with the gas ejection channel and extending in a direction orthogonal to the first direction;
is formed and
At least a portion of the gas distribution channel overlaps the heater electrode when viewed in a second direction perpendicular to the first direction,
A holding device characterized by:

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