JP7120286B2 - Electronic device including semiconductor module - Google Patents

Description

The present invention relates to an electronic device including a semiconductor module.

Japanese Unexamined Patent Application Publication No. 2002-100002 describes a wiring board provided with two systems of power conversion circuits for driving and controlling an electric motor in an electric power steering device. The power conversion circuits of the two systems are formed substantially symmetrically with respect to the center line of the wiring board, and are arranged adjacent to each other so that the positive side power supply path is on the center side and the negative side power supply path is on the peripheral side, Furthermore, a terminal portion is arranged on the peripheral edge thereof.

Japanese Unexamined Patent Application Publication No. 2017-55488

In the wiring board of Patent Document 1, the high-potential-side MOSFET, the low-potential-side MOSFET, and the phase-relay MOSFET, which are installed as switching elements that constitute the power conversion circuit, are individually packaged into three components. It consists of a semiconductor module. Therefore, it is necessary to install wiring around the semiconductor modules in order to connect the three semiconductor modules, and the wiring inevitably increases impedance and inductance. In addition, it was necessary to secure a space for installing the wiring on the wiring board.

SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a technique for simplifying wiring or the like for connecting semiconductor modules provided on a wiring board in an electronic device applied to an electric motor.

The present invention provides an electronic device applied to an electric motor. This electronic device includes a wiring board, an electrical connection wire arranged substantially in the center of the wiring board, and a plurality of motor connections arranged on the peripheral side of the wiring board from the electrical connection wire and connected to the electric motor. A plurality of semiconductor modules including wiring, a plurality of semiconductor elements, and a resin mold for integrally sealing the plurality of semiconductor elements. The plurality of semiconductor modules are arranged on the electrical connection wiring or on the peripheral side of the electrical connection wiring and on the central side of the motor connection wiring, and the electrical connection wiring includes the plurality of semiconductor modules. At least some electrodes of the module are mounted.

According to the electronic device of the present invention, a plurality of semiconductor modules, in which a plurality of semiconductor elements are integrally encapsulated in a resin mold, are mounted on the electrical connection wiring or on the peripheral side thereof and on the central side of the motor connection wiring. placed in a certain position. By integrally encapsulating a plurality of semiconductor elements in a resin mold, it is possible to simplify the wiring that connects the semiconductor elements arranged on the wiring board. In addition, by mounting the electrodes of at least some of the plurality of semiconductor modules on the electrical connection wiring, at least some of the semiconductor modules and the electrical connection wiring can be arranged to overlap each other. Area can be reduced. Therefore, it is possible to reduce the installation area of the wiring between the motor connection wiring and the electrical connection wiring and the wiring installed around the semiconductor module. As a result, it is possible to simplify the wiring for connecting a plurality of motors and the wiring for connecting a plurality of semiconductor elements on the wiring board, thereby reducing the space for the wiring and reducing the impedance and inductance of the wiring. can.

1 is a schematic diagram showing an example of an electric power steering system to which the electronic device according to the first embodiment can be applied; FIG. 1 is a plan view of an electronic device according to a first embodiment; FIG. FIG. 3 is a plan view of a semiconductor module provided in the electronic device shown in FIG. 2; FIG. 4 is a sectional view taken along line IV-IV of FIG. 3; FIG. 4 is a cross-sectional view showing an element structure of a semiconductor element in the semiconductor module shown in FIG. 3; FIG. 3 is a diagram showing an example of a motor drive circuit to which the electronic device shown in FIG. 2 can be applied; The top view of the electronic device concerning a modification. 4A and 4B are a plan view and a cross-sectional view of an electronic device according to a modification; FIG. 9 is a plan view of a semiconductor module provided in the electronic device shown in FIG. 8; XX line sectional view of FIG. The top view of the electronic device which concerns on 2nd Embodiment. FIG. 12 is a diagram showing an example of a motor drive circuit to which the electronic device shown in FIG. 11 can be applied; The top view of the electronic device which concerns on 3rd Embodiment. FIG. 14 is a diagram showing an example of a motor drive circuit to which the electronic device shown in FIG. 13 can be applied; The top view of the electronic device which concerns on 4th Embodiment. The top view of the electronic device which concerns on a modification. 17 is a diagram showing an example of a motor drive circuit to which the electronic device shown in FIGS. 15 and 16 can be applied; FIG. The top view of the electronic device which concerns on 5th Embodiment. FIG. 19 is a diagram showing an example of a motor drive circuit to which the electronic device shown in FIG. 18 can be applied; The top view of the electronic device which concerns on 6th Embodiment. FIG. 21 is a diagram showing an example of a motor drive circuit to which the electronic device shown in FIG. 20 can be applied; The top view of the electronic device which concerns on a modification. FIG. 23 is a diagram showing an example of a motor drive circuit to which the electronic device shown in FIG. 22 can be applied; FIG. 11 is a plan view showing a state in which electrical connection wiring is removed in an electronic device according to a seventh embodiment; FIG. 25 is a plan view showing a state in which electrical connection wiring is installed in the electronic device shown in FIG. 24; FIG. 25 is a plan view of a semiconductor module provided in the electronic device shown in FIG. 24; FIG. 27 is a plan view showing a state in which the resin mold is removed in the semiconductor module shown in FIG. 26; XXVIII-XXVIII line sectional view of FIG. XXIX-XXIX line sectional view of FIG. The top view of the electronic device which concerns on a modification. FIG. 30 is a diagram showing a mounting example of the semiconductor module shown in FIGS. 26 to 29; FIG. FIG. 30 is a diagram showing a mounting example of the semiconductor module shown in FIGS. 26 to 29; FIG. The top view which shows the semiconductor module which concerns on a modification. FIG. 34 is a perspective view showing a state in which the resin mold is removed in the semiconductor module shown in FIG. 33; FIG. 34 is a plan view showing a state in which the resin mold is removed in the semiconductor module shown in FIG. 33; XXXVI-XXXVI line sectional view of FIG.

(First embodiment)
The electronic device 100 according to the first embodiment can be applied to a drive circuit of an electric power steering system (EPS) 80 of a vehicle as shown in FIG. The EPS 80 includes a steering wheel 90, a steering shaft 91, a pinion gear 92, a rack shaft 93, and an EPS device 81, which constitute a steering wheel. A steering shaft 91 is connected to the steering wheel 90 . A pinion gear 92 is provided at the tip of the steering shaft 91 . The pinion gear 92 meshes with the rack shaft 93 . Wheels 95 are rotatably connected to both ends of the rack shaft 93 via tie rods or the like. When the driver rotates the steering wheel 90, the steering shaft 91 rotates. Rotational motion of the steering shaft 91 is converted into linear motion of the rack shaft 93 by the pinion gear 92 , and the wheels 95 are steered at a steering angle corresponding to the amount of displacement of the rack shaft 93 .

The EPS device 81 includes a torque sensor 94 , a reduction gear 96 , and an electromechanically integrated electric motor 40 . The torque sensor 94 is provided on the steering shaft 91 and detects steering torque Trq, which is output torque of the steering shaft 91 . The electric motor 40 includes a rotating electric machine section 41 and an energizing circuit section 42 . The rotating electric machine unit 41 generates an assist torque corresponding to the detected steering torque Trq and the steering direction of the steering wheel 90 . The energizing circuit section 42 controls the driving of the rotating electric machine section 41 . The speed reducer 96 transmits the assist torque to the steering shaft 91 while reducing the speed of rotation of the rotating shaft of the rotor of the rotary electric machine section 41 .

As shown in FIGS. 1 and 2, a substantially disk-shaped electronic device 100 is installed in a casing of the energizing circuit section 42 . FIG. 2 is a diagram of the electronic device 100 viewed from the rotating electric machine section 41 side. The electronic device 100 includes a substantially circular wiring board 101 and a fixing portion 102 provided on the periphery of the wiring board 101 . The fixing portion 102 has a hole into which the electronic device 100 can be fixed on the rotary electric machine portion 41 side by screwing in a bolt.

Electronic device 100 further includes first motor output terminal 111, second motor output terminal 112, third motor output terminal 113, first motor connection wiring 114, second motor connection wiring 115, and third motor A connection wiring 116 , a first semiconductor module 120 , a second semiconductor module 130 , a third semiconductor module 140 , an electrical connection wiring 150 and a power supply terminal 160 are provided. These components are installed on the surface of the wiring board 101 on the side of the rotating electrical machine section 41 .

As shown in FIG. 2, the electrical connection wiring 150 is arranged at a position closer to the positive direction (rightward in FIG. 2) of the center of the wiring board 101 in the x direction, and extends in the y direction. Electrical connection wiring 150 connects to a main battery that supplies power to EPS 80 via power supply terminal 160 .

A first motor output terminal 111, a second motor output terminal 112, and a third motor output terminal 113 are arranged on the peripheral side (positive direction of the x-axis) of the wiring board 101 from the positive direction side of the y-axis toward the negative direction side. are arranged in this order. The first motor connection wiring 114 extends substantially linearly from the first motor output terminal 111 toward the central side (negative direction of the x-axis) of the wiring board 101 on which the electrical connection wiring 150 is arranged. there is The second motor connection wiring 115 extends substantially linearly from the second motor output terminal 112 toward the central side (negative direction of the x-axis) of the wiring board 101 on which the electrical connection wiring 150 is arranged. there is The third motor connection wiring 116 extends substantially linearly from the third motor output terminal 113 toward the central side (negative direction side of the x-axis) of the wiring board 101 on which the electrical connection wiring 150 is arranged. there is The wiring direction of the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116 is the direction (x direction) toward the electrical connection wiring 150. The arrangement direction of the second motor connection wiring 115 and the third motor connection wiring 116 is the direction (y direction) perpendicular to the wiring direction on the wiring board 101 .

The first semiconductor module 120 is arranged between the first motor connection wiring 114 and the electrical connection wiring 150 . The second semiconductor module 130 is arranged between the second motor connection wiring 115 and the electrical connection wiring 150 . The third semiconductor module 140 is arranged between the third motor connection wiring 116 and the electrical connection wiring 150 .

The first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are semiconductor modules having the same structure, and as shown in FIGS. Four external terminals 121 protrude in the positive direction of the x-axis and four external terminals 122 protrude in the negative direction of the x-axis from a substantially rectangular resin mold 125 having two opposing sides and two opposing sides in the y direction. It has a prominent appearance. The first semiconductor module 120 is arranged so as to be substantially parallel to the wiring direction (x direction) of the first motor connection wiring 114 when viewed from above. More specifically, when the first semiconductor module 120 is viewed from the top, two of the four sides of the top surface of the substantially rectangular shape are substantially parallel to the wiring direction of the first motor connection wiring 114 . are arranged so that Similarly, the second semiconductor module 130 and the third semiconductor module 140 are arranged substantially parallel to the wiring direction (x direction) of the second motor connection wiring 115 and the third motor connection wiring 116, respectively, when viewed from above. are placed in More specifically, when the second semiconductor module 130 and the third semiconductor module 140 are viewed from the top, two sides of the four sides of the top surface of the substantially rectangular shape are the second motor connection wirings. 115 and the third motor connection wiring 116 are arranged so as to be substantially parallel to each other.

The first semiconductor module 120 includes a first semiconductor element portion 123 , a second semiconductor element portion 124 , a resin mold 125 , and external terminals 121 and 122 . The first semiconductor element portion 123 includes a semiconductor element 123b, a first electrode 123c, and a second electrode 123a. The second semiconductor element portion 124 includes a semiconductor element 124b, a first electrode 124c, and a second electrode 124a. The resin mold 125 integrally seals the first semiconductor element portion 123 and the second semiconductor element portion 124 .

The semiconductor elements 123b and 124b are vertical insulated gate semiconductor elements having the same element structure as shown in FIG. More specifically, it is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor: MOSFET).

The semiconductor elements 123 b and 124 b each have a semiconductor substrate 60 , a source electrode 71 and a drain electrode 72 . The source electrode 71 is formed in contact with the upper surface 60 u of the semiconductor substrate 60 . The drain electrode 72 is formed in contact with the bottom surface 60 b of the semiconductor substrate 60 . The upper surface 60u corresponds to the first surface, and the lower surface 60b corresponds to the second surface. In the semiconductor substrate 60, an n+ region 61, an n- region 62, and a p+ region 63 are laminated in order from the lower surface 60b side. An n+ region 64 is formed in part of the upper surface side of the p+ region 63 . A trench 73 is formed extending from upper surface 60u of semiconductor substrate 60 through n+ region 64 and p+ region 63 to reach the upper surface side of n− region 62 . A gate insulating film 74 is formed on the inner wall surface of the trench 73 , and a gate electrode 75 is filled in the trench 73 while being insulated from the semiconductor substrate 60 by the gate insulating film 74 . An upper surface of the gate electrode 75 is covered with an insulating film 76 , and the insulating film 76 insulates the gate electrode 75 from the source electrode 71 . Although the material of the semiconductor substrate 60 is not particularly limited, silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the like can be exemplified.

When a positive voltage is applied to the gate electrodes 75 of the first semiconductor element 133 and the second semiconductor element 143, an n-type channel is formed in the p+ region 63 along the gate insulating film 74, and n-type carriers are formed in the semiconductor substrate 60. moves from the source electrode 71 side to the drain electrode 72 side. As a result, current flows from the drain electrode 72 side to the source electrode 71 side. That is, in the semiconductor elements 123b and 124b, by controlling the gate voltage applied to the gate electrode 75, on/off control of the switching elements associated with the semiconductor elements 123b and 124b can be executed. The source electrode 71 corresponds to the first electrode, and the source terminal electrically connected to the source electrode 71 among the external terminals corresponds to the first terminal. Also, the drain electrode 72 corresponds to a second electrode, and the drain terminal electrically connected to the drain electrode 72 among the external terminals corresponds to the second terminal.

The semiconductor elements 123b and 124b each have a source electrode 71 on the side of the rotary electric machine section 41 (positive direction of the z-axis) and a drain electrode on the opposite side (negative direction of the z-axis). They are arranged in the x direction. The semiconductor element 123b and the semiconductor element 124b are arranged side by side in the y-axis direction in the same direction and sealed together. The gate pad of the semiconductor element 123b and the gate pad of the semiconductor element 124b are provided at the same position in each semiconductor element. Of the external terminals 121 and 122, the drain terminal of the semiconductor element 123b is the external terminals 121a and 121b connected to the second electrode 123a, the source terminal is the external terminal 122b connected to the first electrode 123c, The gate terminal is the external terminal 122a. The drain terminal of the semiconductor element 124b is the external terminals 122c and 122d connected to the second electrode 124a, the source terminal is the external terminal 121c connected to the first electrode 124c, and the gate terminal is the external terminal 121d.

The semiconductor elements 123b and 124b are oriented so that their longitudinal directions are parallel to the x direction, which is the wiring direction of the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, and the first motor They are arranged side by side in the y-direction perpendicular to the wiring direction of the connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring . The external terminals 121a and 121b, which are the drain terminals of the semiconductor element 123b, and the external terminal 121c, which is the source terminal of the semiconductor element 124b, are joined onto the first motor connection wiring 114 via solder. External terminals 122c and 122d, which are drain terminals of the semiconductor element 124b, are joined onto the electrical connection wiring 150 via solder.

Similarly, an external terminal protruding in the positive x-axis direction of the second semiconductor module 130 is joined onto the second motor connection wiring 115 via solder. An external terminal protruding in the negative x-axis direction of the second semiconductor module 130 is joined onto the electrical connection wiring 150 via solder. An external terminal protruding in the positive direction of the x-axis of the third semiconductor module 140 is joined onto the third motor connection wiring 116 via solder. An external terminal protruding in the negative x-axis direction of the third semiconductor module 140 is joined onto the electrical connection wiring 150 via solder.

The electronic device 100 is applied to the motor drive circuit shown in FIG. As shown in FIG. 6, the rotating electrical machine section 41 may be of a permanent magnet field type or a winding field type. A stator of the rotary electric machine section 41 includes a winding group M. As shown in FIG. The winding group M includes a U-phase winding U, a V-phase winding V and a W-phase winding W that are star-connected. First ends of U, V and W phase windings U, V and W are connected at a neutral point. The U-, V-, and W-phase windings U, V, and W are shifted by an electrical angle θe of 120°.

The energization circuit section 42 includes an inverter INV as a power converter, a power relay SR, a reverse connection protection relay SC, and the like. Inverter INV includes a switch group SU, SV, SW including a pair of upper arm switch and lower arm switch. A second end of the U-phase winding U is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SU. A second end of the V-phase winding V is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SV. A second end of the W-phase winding W is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SW.

A high-potential side terminal H of the upper arm switch of the switch group SU, SV, SW is connected via a power supply relay SR, a reverse connection protection relay SC, and an inductor L to the positive terminal of a battery V, which is a DC power supply. A bypass capacitor C is connected in parallel with the battery V. A negative terminal of the battery V is connected to the ground. The low-potential side terminals of the lower arm switches of the switch groups SU, SV, SW are connected to the ground via resistors RU, RV, RW.

MOSFETs such as the semiconductor elements 123b and 124b can be used as switching elements forming the switch groups SU, SV, and SW. In each switch group SU, SV, SW, the source electrode of the MOSFET used as the upper arm switch and the drain electrode of the MOSFET used as the lower arm switch are connected and connected in series.

The first semiconductor module 120 can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SU. The second semiconductor module 130 can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SV. A third semiconductor module 140 can be used as a semiconductor module in which the upper arm switch and the lower arm switch of the switch group SW are integrated. The first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 can be applied to the inverter INV.

MOSFETs such as the semiconductor elements 123b and 124b can also be used as switching elements constituting the power supply relay SR and the reverse connection protection relay SC. The power relay SR and the reverse connection protection relay SC are connected in series by connecting the source electrodes of the MOSFETs to each other.

When MOSFETs such as the semiconductor elements 123b and 124b are used as switching elements, their body diodes can be used as freewheeling diodes. For this reason, in FIG. 6, freewheeling diodes connected in anti-parallel to each switch are not shown, but a freewheeling diode may be connected to each switch.

The energization circuit unit 42 detects currents flowing through the resistors RU, RV, and RW, and outputs them as U-, V-, and W-phase currents Iur, Ivr, and Iwr.

The energizing circuit unit 42 includes an ECU mainly composed of a microcomputer, and the ECU operates each switch of the inverter INV to control the torque of the rotating electric machine unit 41 to the torque command value Tr*. The torque command value Tr* is set based on the steering torque Trq detected by the torque sensor 94, for example. The energization circuit unit 42 calculates the electrical angle θe of the rotary electric machine unit 41 based on the output signal of the angle sensor by the ECU. As the angle sensor, for example, an angle sensor including a magnet that is a magnetism generating section provided on the rotor side of the rotating electric machine section 41 and a magnetism detection element provided in the vicinity of the magnet can be exemplified. can. The functions provided by the ECU can be provided by, for example, software recorded in a physical memory device, a computer executing the software, hardware, or a combination thereof.

As described above, the electronic device 100 can be applied to the energization circuit section 42 corresponding to the drive circuit of the EPS 80 . Also, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 can be applied to the switches SU, SV, and SW of an inverter circuit indicated as an inverter INV, respectively.

As described above, in the electronic device 100 according to the first embodiment, the electrical connection wiring 150 is arranged substantially in the center of the wiring substrate 101 in the first direction (x direction), and is arranged in the second direction (y direction) orthogonal to the first direction. direction). The first motor connection wiring 114 , the second motor connection wiring 115 , and the third motor connection wiring 116 are arranged on the peripheral side of the wiring substrate 101 , which is the positive direction side of the x-axis with respect to the electric connection wiring 150 . The first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116 are arranged in this order from the positive direction side toward the negative direction side of the y-axis. It extends substantially parallel to the negative direction of the x-axis.

Between the electrical connection wiring 150 and the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 130, respectively. A semiconductor module 140 is arranged. The first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are arranged between the electrical connection wiring 150 and the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, respectively. This is a semiconductor module in which two semiconductor elements (MOSFETs) constituting switch groups SU, SV, and SW arranged in the same are integrally sealed in a resin mold. In the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140, the two semiconductor elements in the switch groups SU, SV, and SW are connected to each other within the resin mold. It is not necessary to provide the wiring for the wiring on the wiring board 101 on the side of the resin mold (in the xy plane direction).

Further, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are located on the peripheral side of the electrical connection wiring 150, and on the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 115, respectively. Drain terminals of the first semiconductor module 120 , the second semiconductor module 130 , and the third semiconductor module 140 are joined to the electrical connection wiring 150 which is arranged on the central side of the motor connection wiring 116 . Therefore, at least a part of the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 and the electrical connection wiring 150 can be arranged to overlap each other, and the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 can be arranged to overlap each other. The wiring installation area around the semiconductor module 140 can be reduced. As a result, on the wiring board 101, the first semiconductor module 120, the second semiconductor module 130, the third semiconductor module 140, the first motor connection wiring 114, the second motor connection wiring 115, the third motor connection wiring 116, etc. are connected. The wiring to be used can be simplified, the space for the wiring can be reduced, and the impedance and inductance of the wiring can be reduced.

Also, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are connected to the electric connection wiring 150, the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, respectively. are arranged so as to be substantially parallel to the motor connection wiring to be connected between them. Therefore, the length of wiring from each of the motor output terminals 111 to 113 to the electrical connection wiring 150 can be substantially minimized. Also, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 have the external terminals 121 and 122 extending in the same direction as the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring. They are arranged side by side so as to be substantially parallel to the x-direction, which is the wiring direction of the connection wiring 116 . By arranging in this way, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are abbreviated as the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, respectively. It can be made easy to arrange so that it may become parallel.

(Modification)
In the first embodiment, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are arranged such that the two semiconductor elements in the resin mold are substantially parallel to the y direction. is not limited to

As in the first semiconductor module 220, the second semiconductor module 230, and the third semiconductor module 240 shown in FIG. good. The first semiconductor module 220, the second semiconductor module 230, and the third semiconductor module 240 are semiconductor modules similar to the first semiconductor module 120 and the like, and are rotated 90 degrees counterclockwise with respect to the orientation in FIG. placed in an orientation.

The electrical connection wiring 250 extends substantially linearly along the y direction, which is the direction in which the first semiconductor modules 220, the second semiconductor modules 230, and the third semiconductor modules 240 are arranged. The electrical connection wiring 250 is in contact with a drain pad provided on the lower surface of one semiconductor element (the semiconductor element 124b on the upper arm side shown in FIGS. 3 and 6). Since the first semiconductor module 220, the second semiconductor module 230, and the third semiconductor module 240 are arranged on the electrical connection wiring 250, the mounting area on the wiring board 201 can be reduced. Since other configurations of the electronic device 200 are the same as those of the electronic device 100, the description is omitted by replacing the reference numbers in the 100s with those in the 200s.

Two semiconductor elements in the resin mold are stacked in the thickness direction (z direction) of the wiring board 301 as shown in FIG. good too. The first semiconductor module 320, the second semiconductor module 330, and the third semiconductor module 340 are semiconductor modules having the same structure. Each configuration of the first semiconductor module 320 applies to the second semiconductor module 330 or the third semiconductor module 340 by replacing the 320s of the reference numbers with the 330s or 340s.

As shown in FIG. 8B, the wiring substrate 301 includes a resist layer 361, a substrate layer 362, a wiring layer 363, a substrate layer 364, a wiring layer 365, and a substrate layer from the surface on which the third semiconductor module 340 and the like are mounted. 366 and a resist layer 367 are laminated substrates laminated in this order. The substrate layers 362 and 364 are insulating layers made of an insulator called a core material, and the wiring layers 363 and 365 are made of an electrode material such as copper. Third motor connection wiring 316 and electrical connection wiring 350 are provided on substrate layer 362 , and third motor output terminal 313 is coupled to third motor connection wiring 316 on substrate layer 362 . The resist layer 361 is formed on the third motor connection wiring 316 in a region from the vicinity of the installation surface of the third semiconductor module 340 to the front of the third motor output terminal 313 , and the top surface of the third motor output terminal 313 is , are not covered with the resist layer 361 . The third motor output terminal 313 penetrates from the substrate layer 362 to the resist layer 367 in the thickness direction (z-axis direction) of the wiring board 301 . It is connected to the.

As shown in FIGS. 9 and 10, the first semiconductor module 320 includes a first semiconductor element portion 323 arranged on the positive direction side of the z-axis and a second semiconductor element portion 324 arranged on the negative direction side of the z-axis. , a resin mold 325 , and external terminals 321 and 322 . The first semiconductor element portion 323 includes a semiconductor element 323b and a first electrode 323c. The second semiconductor element portion 324 includes a semiconductor element 324b, a first electrode 324c, and a second electrode 324a. The semiconductor elements 323b and 324b are MOSFETs having the same element structure as the semiconductor elements 123b and 124b, and are arranged so that the source electrode 71 side faces the positive direction of the z-axis. The first electrode 324c is joined to the surface of the semiconductor element 324b on the source electrode 71 side and is joined to the surface of the semiconductor element 323b on the drain electrode 72 side. The resin mold 325 integrally seals the first semiconductor element portion 323 and the second semiconductor element portion 324 . The external terminal 321 is electrically connected to the semiconductor element 323b on the first semiconductor element portion 323 side. The external terminal 322 is electrically connected to the semiconductor element 324b on the second semiconductor element portion 324 side.

According to the electronic device 300 shown in FIG. 8, since the semiconductor elements 323b and 324b are stacked, the areas of the first semiconductor module 320, the second semiconductor module 330, and the third semiconductor module 340 in the planar direction (xy direction) are become smaller. As a result, the mounting area of each semiconductor module on the wiring substrate 301 can be further reduced.

7, also in the electronic device 300 shown in FIG. It extends substantially linearly along a certain y direction. The first semiconductor module 320, the second semiconductor module 330, and the third semiconductor module 340 are arranged on the electrical connection wiring 350, and are in contact with the drain pad electrically connected to the drain electrode 72 of the semiconductor element 324b. The mounting area in 301 can be reduced. Further, in the electronic device 300, the wiring board 301 includes wiring layers 363 and 365 in the inner layers of the board. Therefore, the wiring layers 363 and 365 can be used as the negative power supply path shown in FIG. The positive electrode side and the negative electrode side are arranged on the same layer of the wiring board by arranging the wiring constituting the power supply path of the positive electrode side on the substrate surface of the wiring board 301 and arranging the wiring constituting the power supply path of the negative electrode side in the inner layer of the substrate. Since it is no longer necessary to arrange both power supply paths, the substrate can be made smaller. In addition, by arranging the power supply path on the negative electrode side in the inner layer of the substrate, the degree of freedom of arrangement in each configuration arranged on the substrate is increased. Arrangement of each component for reducing the wiring distance to be installed around is facilitated. Since other configurations of the electronic device 300 are the same as those of the electronic device 100, the description is omitted by replacing the reference numbers in the 100s with 300s.

(Second embodiment)
In the first embodiment, a semiconductor module in which two semiconductor elements forming upper and lower arms of an inverter circuit are integrated in a resin mold is described as an example of a plurality of semiconductor modules, but the present invention is not limited to this. . As described in the second embodiment, each of the multiple semiconductor modules may include three semiconductor elements.

As shown in FIG. 11, in the electronic device 400, on the peripheral edge side (positive direction side of the x-axis) of the wiring board 401, the first motor output terminal 411, the second A second motor output terminal 412 and a third motor output terminal 413 are arranged in this order. The first motor connection wiring 414 extends substantially linearly from the first motor output terminal 411 toward the central side (negative direction of the x-axis) of the wiring board 401 on which the electrical connection wiring 450 is arranged. there is The second motor connection wiring 115 extends substantially linearly from the second motor output terminal 412 toward the central side (negative direction of the x-axis) of the wiring board 401 on which the electrical connection wiring 450 is arranged. there is The third motor connection wiring 416 extends substantially linearly from the third motor output terminal 413 toward the central side (negative direction side of the x-axis) of the wiring board 401 on which the electrical connection wiring 450 is arranged. there is

The semiconductor modules 420 and 430 are arranged substantially parallel to the x direction between the first motor connection wiring 414, the second motor connection wiring 415, the third motor connection wiring 416, and the electric connection wiring 450. FIG. The semiconductor module 420 is installed over the first motor connection wiring 414 , the second motor connection wiring 415 and the third motor connection wiring 416 . The semiconductor module 430 is installed on electrical connection wiring 450 that extends substantially linearly in the y direction. The semiconductor modules 420 and 430 are connected by intermediate wirings 417, 418 and 419, respectively. Intermediate wires 417, 418, and 419 are part of first motor connection wire 414, second motor connection wire 415, and third motor connection wire 416, respectively. The semiconductor module 420 is arranged on the peripheral side of the electrical connection wiring 450 , and the semiconductor module 430 is arranged on the electrical connection wiring 450 . Also, the semiconductor modules 420 and 430 are arranged closer to the center than the first motor connection wiring 414 , the second motor connection wiring 415 , and the third motor connection wiring 416 . A drain terminal of the semiconductor module 430 is joined to the electrical connection wiring 450 .

Semiconductor modules 420 and 430 are configured to include three semiconductor elements, which are the same semiconductor elements added to the first semiconductor modules 120 shown in FIGS. 3 and 4, which include two semiconductor elements 123b and 124b. It is a semiconductor module. The semiconductor modules 420 and 430 are arranged in such a direction that three semiconductor elements are aligned substantially parallel to the y direction. When semiconductor modules 420 and 430 are viewed from the top, two sides of the four sides of the top surface, which has a substantially rectangular shape, are connected to the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring. It is arranged so as to be substantially parallel to the wiring direction of the connection wiring 416 . The drain pads of the three semiconductor elements of the semiconductor module 420 are in contact with the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416, respectively. The drain pads of the three semiconductor elements of the semiconductor module 430 are in contact with the electrical connection wiring 450 . External terminals electrically connected to the source electrodes 71 of the three semiconductor elements included in the semiconductor module 430 are connected to the intermediate wirings 417 , 418 and 419 . Although not shown, the external terminals of the semiconductor modules 420 and 430 are substantially parallel to the wiring directions of the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416 to which they are connected. It protrudes in the direction of facing.

The semiconductor modules 420 and 430 include a switch group SP including the entire upper arm and a switch group SP including the entire lower arm of each phase of an inverter circuit including three semiconductor elements as shown in FIGS. 12(a) and 12(b). It can be applied to an inverter circuit as a group SN. More specifically, the semiconductor module 420 can be used as the switch group SN, and the semiconductor module 430 can be used as the switch group SP. The drive circuit shown in FIG. 12A is the same as the drive circuit shown in FIG. 6 except for the configuration of the switch group. The driving circuit shown in FIG. 12(b) is different from FIG. 12(a) only in that instead of the three resistors RU, RV and RW, one resistor R is connected to the ground. The other configurations are the same as in FIG. 12(a).

(Third embodiment)
In the first embodiment, as the semiconductor module, the electronic device 100 that includes only the semiconductor module that integrally includes a plurality of semiconductor elements in the resin mold has been exemplified and described, but the present invention is not limited to this. As in the electronic device 500 shown in FIG. 13, in addition to the semiconductor module integrally including a plurality of semiconductor elements in the resin mold, a semiconductor module including one semiconductor element in the resin mold may be provided.

As shown in FIG. 13, in the electronic device 500, as in the first embodiment, the first semiconductor module 520 has the first motor connection wiring 514 between the first motor connection wiring 514 and the electrical connection wiring 550. They are arranged substantially parallel to the wiring direction. In electronic device 500 , semiconductor module 529 including one semiconductor element is further arranged on first motor connection wiring 514 .

Similarly, the second semiconductor module 530 is arranged substantially parallel to the wiring direction of the second motor connection wiring 515 between the second motor connection wiring 515 and the electrical connection wiring 550 . A semiconductor module 539 including one semiconductor element is arranged on the second motor connection wiring 515 . The third semiconductor module 540 is arranged substantially parallel to the wiring direction of the third motor connection wiring 516 between the third motor connection wiring 516 and the electrical connection wiring 550 . A semiconductor module 549 including one semiconductor element is arranged on the third motor connection wiring 516 . That is, the first semiconductor module 520, the second semiconductor module 530, and the third semiconductor module 540 are located on the peripheral side of the electrical connection wiring 550, and on the first motor connection wiring 514, the second motor connection wiring 515, and the third motor connection wiring 515, respectively. It is arranged closer to the center than the motor connection wiring 516 .

Semiconductor modules 529, 539, and 549 are semiconductor modules configured to include one semiconductor element, while the first semiconductor module 120 shown in FIGS. 3 and 4 includes two semiconductor elements 123b and 124b. be. Although not shown, external terminals of the first semiconductor module 520, the second semiconductor module 530, and the third semiconductor module 540 are connected to the first motor connection wiring 514, the second motor connection wiring 515, and the third motor connection wiring 515, respectively. They protrude facing each other in a direction substantially parallel to the wiring direction of the motor connection wiring 516 . Drain terminals of the first semiconductor module 520 , the second semiconductor module 530 , and the third semiconductor module 540 are connected to the electrical connection wiring 550 . Since the rest of the configuration of the electronic device 500 is the same as that of the electronic device 100, the description is omitted by replacing the reference numbers in the 100s with 500s.

Electronic device 500 can be applied to a drive circuit as shown in FIG. Semiconductor modules 529, 539, 549 are arranged between switch groups SU, SV, SW and U, V, W-phase windings U, V, W, respectively, as shown in FIG. can be applied to an inverter circuit as More specifically, semiconductor module 420 can be used as switches SSU, SSV, and SSW. 14 has switches SSU, SSV, and SSW between the switch groups SU, SV, and SW and the U, V, and W phase windings U, V, and W, as shown in FIG. 6, and other configurations are the same as those of the drive circuit shown in FIG.

(Fourth embodiment)
In the fourth embodiment, an electronic device 600 provided with a plurality of sets of electrical connection wiring, motor connection wiring, and semiconductor modules arranged therebetween will be described.

In the electronic device 600 shown in FIG. 15, two sets of electrical connection wiring, motor connection wiring, and semiconductor module are provided so as to be substantially symmetrical about a central line L1 extending in the y direction and passing through the x direction of the wiring board 601 . are set up.

A first motor output terminal 611a, a second motor output terminal 612a, a third motor output terminal 613a, a first motor connection wiring 614a, a second motor connection wiring 615a, third motor connection wiring 616a, first semiconductor module 620a, second semiconductor module 630a, third semiconductor module 640a, semiconductor modules 629a, 639a, 649a, electrical connection wiring 650, and a power terminal 660 . The installation position of the power terminal 660a is shifted in the positive direction of the x-axis with respect to the power terminal 560 shown in FIG. Other configurations on the positive axial side of the center line L1 of the wiring substrate 601 are the same as the configurations on the wiring substrate 501 of the electronic device 500 shown in FIG. , and the suffix a is added to omit the description.

A first motor output terminal 611b, a second motor output terminal 612b, a third motor output terminal 613b, a first motor connection wiring 614b, and a 2 motor connection wiring 615b, third motor connection wiring 616b, first semiconductor module 620b, second semiconductor module 630b, third semiconductor module 640b, semiconductor modules 629b, 639b, 649b, electrical connection wiring 650 , and a power terminal 660 . Other configurations on the negative side of the x-axis from the center line L1 of the wiring board 601 are equivalent to the configurations on the positive side of the x-axis indicated by the suffix "a" that are reversed with respect to the center line L1. Therefore, the description is omitted by replacing the suffix "a" with the suffix "b".

As shown in FIG. 15, in the electronic device 600, a pair of electrical connection wirings 650a and 650b are arranged on both sides of the central line L1 of the wiring substrate 601. As shown in FIG. A pair of first motor output terminals 611a, 611b, second motor output terminals 612a, 612b, and third motor output terminals 613a, 613b are arranged on the peripheral side of the wiring board 602 in the positive or negative direction of the x-axis. Between the electrical connection wirings 650a and 650b and the first motor output terminals 611a and 611b, the second motor output terminals 612a and 612b, and the third motor output terminals 613a and 613b, there are provided third motor output terminals extending substantially linearly in the x direction. First motor connection wirings 614a and 614b, second motor connection wirings 615a and 615b, and third motor connection wirings 616a and 616b are arranged.

The first semiconductor modules 620a, 620b are arranged substantially parallel to the wiring direction of the first motor connection wirings 614a, 614b between the first motor connection wirings 614a, 614b and the electrical connection wirings 650a, 650b, respectively. ing. The semiconductor modules 629a, 629b are arranged on the first motor connection wirings 614a, 614b, respectively. The second semiconductor modules 630a, 630b are arranged substantially parallel to the wiring direction of the second motor connection wirings 615a, 615b between the second motor connection wirings 615a, 615b and the electrical connection wirings 650a, 650b, respectively. . The semiconductor modules 639a, 639b are arranged on the second motor connection wirings 615a, 615b, respectively. The third semiconductor modules 640a, 640b are arranged substantially parallel to the wiring direction of the third motor connection wirings 616a, 616b between the third motor connection wirings 616a, 616b and the electrical connection wirings 650a, 650b, respectively. . The semiconductor modules 649a and 649b are arranged on the third motor connection wirings 616a and 616b, respectively.

That is, the first semiconductor module 620a, the second semiconductor module 630a, and the third semiconductor module 640a are located on the peripheral side of the electric connection wiring 650a, and on the first motor connection wiring 614a, the second motor connection wiring 615a, and the third motor connection wiring 615a, respectively. It is arranged on the central side of the motor connection wiring 616a. In addition, the first semiconductor module 620b, the second semiconductor module 630b, and the third semiconductor module 640b are located on the peripheral side of the electric connection wiring 650b, and on the first motor connection wiring 614b, the second motor connection wiring 615b, and the third motor connection wiring 615b, respectively. It is arranged on the central side of the motor connection wiring 616b.

Although not shown, external terminals of the first semiconductor modules 620a and 620b, the second semiconductor modules 630a and 630b, and the third semiconductor modules 640a and 640b are connected to first motor connection wirings 614a and 614b, respectively. , second motor connection wires 615a and 615b, and third motor connection wires 616a and 616b. Drain terminals of the first semiconductor module 620a, the second semiconductor module 630a, and the third semiconductor module 640a are connected to the electrical connection wiring 650a. Drain terminals of the first semiconductor module 620b, the second semiconductor module 630b, and the third semiconductor module 640b are connected to the electrical connection wiring 650b.

(Modification)
Like the electronic device 610 shown in FIG. 16, two sets of electric connection wiring, motor connection wiring, and semiconductor module are provided so as to be substantially symmetrical about the center O1 in the x and y directions of the wiring board 601. may be provided. 16 are the same as those of the electronic device 600 shown in FIG. 15, and description thereof will be omitted.

A first motor output terminal 611c, a second motor output terminal 612c, a third motor output terminal 613c, a first motor connection wiring 614c, a second motor connection wiring 615c, third motor connection wiring 616c, first semiconductor module 620c, second semiconductor module 630c, third semiconductor module 640c, semiconductor modules 629c, 639c, 649c, electrical connection wiring 650, and a power terminal 660 . Other components on the negative x-axis side of the center O1 of the wiring board 601 are formed by rotating each component on the positive x-axis direction indicated by the subscript "a" by 180° on the xy plane about the center O1. , the description is omitted by replacing the suffix "a" with the suffix "c".

Electronic devices 600 and 610 can be applied to a drive circuit including two systems of three-phase inverters INV1 and INV2 as shown in FIG. In the drive circuit shown in FIG. 17, the winding group M includes a pair of U, V, W phase windings U1, V1, W1 and U, V, W phase windings U2, V2, W2. . 17 are circuit groups 1 connected to the U, V, and W phase windings U1, V1, and W1 of the winding group M. 17 are circuit groups 2 connected to the U, V, and W phase windings U2, V2, and W2 of the winding group M, respectively. Since the circuit configurations of circuit groups 1 and 2 are the same as those of the drive circuit shown in FIG. As in the electronic devices 600 and 610, by providing a plurality of sets of electrical connection wiring, motor connection wiring, and semiconductor modules arranged therebetween, it can be applied to inverter circuits of two or more systems. can.

(Fifth embodiment)
As shown in FIGS. 18 and 19, the electronic device 700 may be applicable to a single H-bridge circuit. As shown in FIG. 18, the electronic device 700 has a first motor output terminal 711, a second motor output terminal 712, a first motor connection wiring 714, a second motor connection wiring 715, and a wiring board 701. It includes a first semiconductor module 720 , a second semiconductor module 730 , electrical connection wiring 750 , and power terminals 760 . The first semiconductor module 720 is arranged substantially parallel to the wiring direction of the first motor connection wiring 514 between the first motor connection wiring 714 and the electrical connection wiring 750 . The second semiconductor module 730 is arranged substantially parallel to the wiring direction of the second motor connection wiring 715 between the second motor connection wiring 715 and the electrical connection wiring 750 . That is, the first semiconductor module 720 and the second semiconductor module 730 are arranged on the peripheral side of the electrical connection wiring 750 and on the central side of the first motor connection wiring 714 and the second motor connection wiring 715, respectively. .

Although not shown, the external terminals of the first semiconductor module 720 and the second semiconductor module 730 are arranged substantially parallel to the wiring direction of the first motor connection wiring 714 and the second motor connection wiring 715 to which they are connected. It protrudes in opposite directions. Drain terminals of the first semiconductor module 720 and the second semiconductor module 730 are connected to the electrical connection wiring 750 .

The drive circuit shown in FIG. 19 is different from that shown in FIG. 6 in that the drive circuit for the three-phase motor shown in FIG. 6 is the drive circuit for the two-phase motor, and other circuit configurations are the same. The winding group M includes an A-phase winding A and a B-phase winding B, the first ends of which are connected at a neutral point. Inverter INV includes switch groups SA and SB including a pair of upper arm switches and lower arm switches. A second end of the A-phase winding A is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SA. A second end of the B-phase winding B is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SB.

A high-potential side terminal H of the upper arm switch of the switch groups SA and SB is connected via a power supply relay SR, a reverse connection protection relay SC, and an inductor L to the positive terminal of a battery V, which is a DC power supply. A bypass capacitor C is connected in parallel with the battery V. A negative terminal of the battery V is connected to the ground. The low-potential side terminals of the lower arm switches of the switch groups SA and SB are grounded via resistors RA and RB.

The first semiconductor module 720 can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SA. A second semiconductor module 730 can be used as a semiconductor module in which the upper arm switch and the lower arm switch of the switch group SB are integrated. The electronic device 700 can be applied to the one-system H bridge circuit shown in FIG.

(Sixth embodiment)
As shown in FIG. 20, it is also possible to provide an electronic device 800 that is applicable to two H-bridge circuits. The electronic device 800 includes, on a wiring board 801, first motor output terminals 811a and 811b, second motor output terminals 812a and 812b, first motor connection wirings 814a and 814b, and second motor connection wirings 815a and 815b. , first semiconductor modules 820 a and 820 b , second semiconductor modules 830 a and 830 b , electrical connection wiring 850 , and power supply terminals 860 .

In the electronic device 800 , a substantially L-shaped electrical connection wiring 850 is provided substantially in the center of the wiring board 801 . The electrical connection wiring 850 includes a first portion 850a extending in the y-direction approximately at the center of the wiring substrate 801 in the x-direction and a second portion 850b extending in the x-direction approximately at the center of the wiring substrate 801 in the y-direction. I have. The first portion 850a and the second portion 850b are integrally formed.

A first motor output terminal 811a and a second motor output terminal 812a are arranged on the peripheral side of the wiring board 801 in the positive direction of the x-axis. A first motor connection wire 814a and a second motor connection wire extending substantially linearly in the x-direction are provided between the first portion 850a of the electrical connection wire and the first motor output terminal 811a and the second motor output terminal 812a. 815a is located. The first semiconductor module 820a is arranged substantially parallel to the wiring direction of the first motor connection wiring 814a between the first motor connection wiring 814a and the first portion 850a of the electrical connection wiring. The second semiconductor module 830a is arranged substantially parallel to the wiring direction of the second motor connection wiring 815a between the second motor connection wiring 815a and the first portion 850a of the electrical connection wiring.

A first motor output terminal 811b and a second motor output terminal 812b are arranged on the peripheral side of the wiring board 801 in the positive direction of the y-axis. Between the second portion 850b of the electric connection wiring and the first motor output terminal 811b and the second motor output terminal 812b, a first motor connection wiring 814b and a second motor connection wiring extending substantially linearly in the y direction are provided. 815b is located. The first semiconductor module 820b is arranged substantially parallel to the wiring direction of the first motor connection wiring 814b between the first motor connection wiring 814b and the second portion 850b of the electrical connection wiring. The second semiconductor module 830b is arranged substantially parallel to the wiring direction of the second motor connection wiring 815b between the second motor connection wiring 815b and the second portion 850b of the electrical connection wiring. That is, the first semiconductor modules 820a, 820b and the second semiconductor modules 830a, 830b are located on the peripheral side of the electrical connection wiring 850 and are located closer to the first motor connection wiring 814a, 814b and the second motor connection wiring 815a, 815b. is also centrally located.

The first semiconductor modules 820a, 820b and the second semiconductor modules 830a, 830b are semiconductor modules having the same structure as the first semiconductor module 120 according to the first embodiment. The first semiconductor module 820a and the second semiconductor module 830a include two semiconductor elements in a resin mold, and these two semiconductor elements are arranged in the same direction and substantially parallel to the x direction. The first semiconductor module 820b and the second semiconductor module 830b include two semiconductor elements in a resin mold, and these two semiconductor elements are arranged in the same direction and substantially parallel to the y direction. Although not shown, the external terminals of the first semiconductor modules 820a, 820b and the second semiconductor modules 830a, 830b are connected to the first motor connection wirings 814a, 814b and the second motor connection wirings 815a, 815b, respectively. They protrude facing each other in a direction substantially parallel to the wiring direction. Drain terminals of the first semiconductor module 820a and the second semiconductor module 830a are joined to the electrical connection wiring 850a. Drain terminals of the first semiconductor module 820b and the second semiconductor module 830b are joined to the electrical connection wiring 850b.

Electronic device 800 can be applied to a drive circuit as shown in FIG. The drive circuit shown in FIG. 21 is a two-system H bridge circuit, and winding group M includes a pair of A and B phase windings A1 and B1 and A and B phase windings A2 and B2. there is Each configuration such as INV1 indicated by the suffix "1" on the left side of FIG. Each configuration such as INV2 indicated by the suffix "2" on the right side of FIG.
Inverter INV1 includes switch groups SA1 and SB1 including a pair of upper arm switches and lower arm switches. Inverter INV2 includes switch groups SA2 and SB2 including a pair of upper arm switches and lower arm switches. A second end of the A-phase winding A1 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SA1. A second end of the B-phase winding B1 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SB1. A second end of the A-phase winding A2 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SA2. A second end of the B-phase winding B2 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SB2.

A high-potential side terminal H of the upper arm switch of the switch group SA1, SB1, SA2, SB2 is connected to the positive terminal of the battery V, which is a DC power supply, via a power supply relay SR, a reverse connection protection relay SC, and an inductor L. . A bypass capacitor C is connected in parallel with the battery V. A negative terminal of the battery V is connected to the ground. The low-potential side terminals of the lower arm switches of the switch groups SA1 and SB1 are grounded via resistors RA1 and RB1. The low-potential side terminals of the lower arm switches of the switch groups SA2 and SB2 are grounded via resistors RA2 and RB2.

A first semiconductor module 820a can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SA1. A second semiconductor module 830a can be used as a semiconductor module that integrates the upper arm switch and the lower arm switch of the switch group SB1. A first semiconductor module 820b can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SA2. A second semiconductor module 830b can be used as a semiconductor module that integrates the upper arm switch and the lower arm switch of the switch group SB2. As in the electronic device 800, by connecting two sets of motor connection wiring and a semiconductor module to the same electrical connection wiring, it can be applied to two H-bridge circuits.

(Modification)
In the sixth embodiment, the two sets of motor connection wiring and the semiconductor module are connected to the same electrical connection wiring, but the present invention is not limited to this. As in an electronic device 900 shown in FIG. 22, three or more sets of motor connection wiring and semiconductor modules may be connected to the same electrical connection wiring.

The electronic device 900 includes, on a wiring board 901, first motor output terminals 911a and 911b, second motor output terminals 912a and 912b, first motor connection wirings 914a and 914b, second motor connection wirings 915a and 915b, and second motor connection wirings 915a and 915b. 1 semiconductor modules 920 a and 920 b , second semiconductor modules 930 a and 930 b , electrical connection wiring 950 , and power supply terminals 960 are provided. In the electronic device 900 , a substantially rectangular electrical connection wiring 950 with long sides extending in the y direction is provided substantially in the center of the wiring board 901 .

A first motor output terminal 911a and a second motor output terminal 912a are arranged on the peripheral side of the wiring board 901 in the positive direction of the x-axis. A first motor connection wire 914a and a second motor connection wire 915a extending substantially linearly in the x-direction are arranged between the electrical connection wire 950 and the first motor output terminal 911a and the second motor output terminal 912a. ing. The first semiconductor module 920a is arranged between the first motor connection wiring 914a and the electrical connection wiring 950 substantially parallel to the wiring direction of the first motor connection wiring 914a. The second semiconductor module 930a is arranged between the second motor connection wiring 915a and the electrical connection wiring 950 substantially parallel to the wiring direction of the second motor connection wiring 915a.

A first motor output terminal 911b and a second motor output terminal 912b are arranged on the peripheral side of the wiring board 901 in the positive direction of the y-axis. A first motor connection wire 914b and a second motor connection wire 915b extending substantially linearly in the y direction are arranged between the electrical connection wire 950 and the first motor output terminal 911b and the second motor output terminal 912b. ing. The first semiconductor module 920b is arranged between the first motor connection wiring 914b and the electric connection wiring 950 substantially parallel to the wiring direction of the first motor connection wiring 914b. The second semiconductor module 930b is arranged between the second motor connection wiring 915b and the electrical connection wiring 950 substantially parallel to the wiring direction of the second motor connection wiring 915b.

A first motor output terminal 911c and a second motor output terminal 912c are arranged on the peripheral side of the wiring board 901 in the negative direction of the x-axis. A first motor connection wire 914c and a second motor connection wire 915c extending substantially linearly in the x direction are arranged between the electrical connection wire 950 and the first motor output terminal 911c and the second motor output terminal 912c. ing. The first semiconductor module 920c is arranged between the first motor connection wiring 914c and the electrical connection wiring 950 substantially parallel to the wiring direction of the first motor connection wiring 914c. The second semiconductor module 930c is arranged between the second motor connection wiring 915c and the electrical connection wiring 950 substantially parallel to the wiring direction of the second motor connection wiring 915c.

The first semiconductor modules 920a, 920b, 920c and the second semiconductor modules 930a, 930b, 930c are semiconductor modules having the same structure as the first semiconductor module 120 according to the first embodiment. The first semiconductor module 920a and the second semiconductor module 930a include two semiconductor elements in a resin mold, and these two semiconductor elements are arranged in the same direction and substantially parallel to the x direction. The first semiconductor module 920b and the second semiconductor module 930b include two semiconductor elements in a resin mold, and these two semiconductor elements are arranged in the same direction and substantially parallel to the y direction. The first semiconductor module 920c and the second semiconductor module 930c include two semiconductor elements in a resin mold, and these two semiconductor elements are arranged in the same direction and substantially parallel to the x direction. Although not shown, the external terminals of the first semiconductor modules 920a, 920b, 920c and the second semiconductor modules 930a, 930b, 930c are connected to the first motor connection wirings 914a, 914b, 914c, the second motor They protrude facing each other in a direction substantially parallel to the wiring direction of the connection wirings 915a, 915b, and 915c.

The electronic device 900 can be applied to a three-system H bridge circuit as shown in FIG. The winding group M includes A and B phase windings A1 and B1, A and B phase windings A2 and B2, and A and B phase windings A3 and B3. Each configuration such as INV1 indicated by the suffix "1" in FIG. Each configuration such as INV2 indicated by the suffix "2" in FIG. Each configuration such as INV3 indicated by subscript "3" in FIG.

Inverter INV1 includes switch groups SA1 and SB1 including a pair of upper arm switches and lower arm switches. Inverter INV2 includes switch groups SA2 and SB2 including a pair of upper arm switches and lower arm switches. Inverter INV3 includes switch groups SA3 and SB3 including a pair of upper arm switches and lower arm switches. A second end of the A-phase winding A1 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SA1. A second end of the B-phase winding B1 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SB1. A second end of the A-phase winding A2 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SA2. A second end of the B-phase winding B2 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SB2. A second end of the A-phase winding A3 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SA3. A second end of the B-phase winding B3 is connected to a connection point between the upper arm switch and the lower arm switch of the switch group SB3.

The high potential side terminal H of the upper arm switch of the switch group SA1, SB1, SA2, SB2, SA3, SB3 is connected to the positive terminal of the battery V, which is a DC power supply, via the power supply relay SR, the reverse connection protection relay SC, and the inductor L. It is connected. A bypass capacitor C is connected in parallel with the battery V. A negative terminal of the battery V is connected to the ground. The low-potential side terminals of the lower arm switches of the switch groups SA1 and SB1 are grounded via resistors RA1 and RB1. The low-potential side terminals of the lower arm switches of the switch groups SA2 and SB2 are grounded via resistors RA2 and RB2. The low-potential side terminals of the lower arm switches of the switch groups SA3 and SB3 are grounded via resistors RA3 and RB3.

A first semiconductor module 920a can be used as a semiconductor module that integrates the upper arm switch and the lower arm switch of the switch group SA1. A second semiconductor module 930a can be used as a semiconductor module that integrates the upper arm switch and the lower arm switch of the switch group SB1. A first semiconductor module 920b can be used as a semiconductor module that integrates the upper arm switch and the lower arm switch of the switch group SA2. A second semiconductor module 930b can be used as a semiconductor module that integrates the upper arm switch and the lower arm switch of the switch group SB2. A first semiconductor module 920c can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SA3. A second semiconductor module 930c can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SB3.

According to each of the above embodiments, the following effects can be obtained. A first semiconductor module 920c can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SA3. A second semiconductor module 930c can be used as a semiconductor module integrating the upper arm switch and the lower arm switch of the switch group SB3.

(Seventh embodiment)
In the seventh embodiment, as in the fourth embodiment, an electronic device 1000 provided with a plurality of sets of electrical connection wiring, motor connection wiring, and semiconductor modules arranged therebetween will be described.

In the electronic device 1000 shown in FIGS. 24 and 25, the electrical connection wiring, the motor connection wiring, and the semiconductor module are arranged so as to be substantially symmetrical about a center line L10 that passes through substantially the center of the wiring board 1001 in the x direction and extends in the y direction. and two sets are provided.

A first motor output terminal 1011a, a second motor output terminal 1012a, a third motor output terminal 1013a, a first motor connection wiring 1014a, a second motor connection wiring 1015a, third motor connection wiring 1016a, first semiconductor module 1020a, second semiconductor module 1030a, third semiconductor module 1040a, semiconductor modules 1029a, 1039a, 1049a, electrical connection wiring 1050a, and an integrated circuit 1060a. The integrated circuit 1060a switches and controls the first semiconductor module 1020a, the second semiconductor module 1030a, and the third semiconductor module 1040a.

A first motor output terminal 1011b, a second motor output terminal 1012b, a third motor output terminal 1013b, a first motor connection wiring 1014b, and a 2 motor connection wiring 1015b, third motor connection wiring 1016b, first semiconductor module 1020b, second semiconductor module 1030b, third semiconductor module 1040b, semiconductor modules 1029b, 1039b, 1049b, electrical connection wiring 1050b , and an integrated circuit 1060b. The integrated circuit 1060b switches and controls the first semiconductor module 1020b, the second semiconductor module 1030b, and the third semiconductor module 1040b.

Other configurations on the x-axis negative direction side of the center line L1 of the wiring board 1001 are roughly equivalent to the configurations on the x-axis positive direction side indicated by the suffix "a" reversed with respect to the center line L10. Since they are equivalent, the description is omitted by replacing the suffix "a" with the suffix "b". Semiconductor modules such as first semiconductor modules 1020a and 1020b and arithmetic units such as integrated circuits 1060a and 1060b for controlling the operation of the electric motor are mounted on the wiring substrate 1001 on the same substrate. By arranging the drive circuit composed of the semiconductor module and the control circuit of the arithmetic unit on the same substrate, in addition to the effect of miniaturization of the product, noise suppression effect can be achieved by shortening the wiring of the high-frequency signal line. can be obtained. Note that the configuration functioning as the arithmetic section may be mounted on the same substrate as the first semiconductor modules 1020a, 1020b, etc., and may be mounted on the same surface as the mounting surfaces of the first semiconductor modules 1020a, 1020b, etc. , or may be mounted on its back surface. More specifically, as shown in FIGS. 24 and 25, integrated circuits 1060a and 1060b functioning as sub-computing units are mounted on the same surface as the mounting surfaces of the first semiconductor modules 1020a and 1020b, etc., and function as main computing units. The microcomputer to be used may be mounted on the back side.

As shown in FIG. 24, in the electronic device 1000, a pair of electrical connection wirings 1050a and 1050b are arranged on both sides of the center line L10 of the wiring substrate 1001. As shown in FIG. A pair of first motor output terminals 1011a and 1011b, second motor output terminals 1012a and 1012b, and third motor output terminals 1013a and 1013b are arranged on the peripheral side of the wiring board 1002 in the positive or negative direction of the x-axis. Between the electrical connection wirings 1050a and 1050b, the first motor output terminals 1011a and 1011b, the second motor output terminals 1012a and 1012b, and the third motor output terminals 1013a and 1013b, the third motors extending substantially linearly in the x direction are provided. First motor connection wirings 1014a and 1014b, second motor connection wirings 1015a and 1015b, and third motor connection wirings 1016a and 1016b are arranged.

In the electronic device 1000, the first semiconductor modules 1020a and 1020b, the second semiconductor modules 1030a and 1030b, and the third semiconductor modules 1040a and 1040b have lower surfaces (surfaces on the positive side of the z-axis shown in FIGS. 24 and 25). ), a semiconductor module is used in which electrodes of two semiconductor elements are exposed from a resin mold. In the seventh embodiment, one of the two exposed electrodes of the two semiconductor elements is joined to the first motor connection wirings 1014a and 1014b, the second motor connection wirings 1015a and 1015b, and the third motor connection wirings 1016a and 1016b. and the other is joined to electrical connection wirings 1050a and 1050b.

A semiconductor module 1200 is shown in FIGS. 26-29 as an example of a semiconductor module that can be used as the first semiconductor modules 1020a, 1020b, the second semiconductor modules 1030a, 1030b, and the third semiconductor modules 1040a, 1040b.

As shown in FIGS. 26 to 29, a semiconductor module 1200 includes a first semiconductor element 1233 and a second semiconductor element 1243, a resin mold 1220 for integrally sealing the first semiconductor element 1233 and the second semiconductor element 1243, a conductive It has members 1201 to 1205 and conductive members 1211 , 1212 , 1231 and 1241 . The x-direction and y-direction shown in FIGS. 26 to 29 are the sides of the semiconductor module 1200, and the xy plane direction is the plane direction of the semiconductor module 1200. FIG. The z-direction is a vertical direction perpendicular to the planar direction.

26A is a top view of the semiconductor module 1200, and FIG. 26B is a bottom view of the semiconductor module 1200. FIG. 27 is a top view of each configuration within the resin mold 1220 of the semiconductor module 1200, and FIGS. 28 and 29 are cross-sectional views of each configuration within the resin mold 1220 of the semiconductor module 1200. FIG. 27 to 29, the positions where the resin molds 1220 are provided are indicated by broken lines.

As shown in FIGS. 26 to 29, in the resin mold 1220, the second semiconductor element 1243 is rotated 180° around the vertical direction (z direction) with respect to the first semiconductor element 1233. They are integrally sealed in a state of being arranged side by side in the direction. The first semiconductor element 1233 and the second semiconductor element 1243 are semiconductor elements having the same structure, shape, size, etc., and are substantially rectangular when viewed from above.

On the first semiconductor element 1233 side, the conductive member 1231, the bonding member 1232, the first semiconductor element 1233, the bonding member 1234, and the conductive member 1211 are arranged in this order from above. On the second semiconductor element 1243 side, the conductive member 1241, the bonding member 1242, the second semiconductor element 1243, the bonding member 1244, and the conductive member 1212 are arranged in this order from above. Square pins 1206 to 1209 are arranged near four corners of the resin mold 1220 .

When the semiconductor module 1200 is viewed from below, the entire lower surfaces of the conductive members 1201 to 1205 and the conductive member 1211 are exposed from the resin mold 1220 .

In the semiconductor module 1200, as shown in FIG. 26B, conductive members 1201 to 1205 functioning as gate terminals, source terminals, or drain terminals are arranged on the lower surface side (negative direction of the z-axis) of the resin mold 1220. While exposed, it does not protrude in the lateral y direction.

The conductive member 1212 has a low stepped portion 1212a that is not exposed from the resin mold 1220 and a high stepped portion 1212b that is exposed from the resin mold 1220. As shown in FIG. The high step portion 1212b is a substantially rectangular portion provided below and around the second semiconductor element 1243 . The low stepped portion 1212a is an elongated rectangular portion extending from the end of the high stepped portion 1212b to the side where the first semiconductor element 1233 is installed (the negative direction side of the x-axis).

The conductive member 1231 has a substantially rectangular shape when viewed from above, and includes an extension portion 1231a and a pad portion 1231b. The pad portion 1231b is located on the upper surface side of the first semiconductor element 1233 and is bonded to the upper surface side (source electrode side) of the first semiconductor element 1233 via the bonding member 1232 . The extension portion 1231a extends from the pad portion 1231b in the negative direction of the y-axis and extends above the low step portion 1212a of the conductive member 1212 . The lower end surface of the extension portion 1231a is joined to the upper surface of the low step portion 1212a via a joining member 1234. As shown in FIG. Through the conductive members 1231 and 1212 , the drain electrode side, which is the lower surface side of the second semiconductor element 1243 , and the source electrode side, which is the upper surface side of the first semiconductor element 1233 , are electrically connected.

Like the conductive member 1231, the conductive member 1241 has a substantially rectangular shape when viewed from above, and includes an extension portion 1241a and a pad portion 1241b. The pad portion 1241b is located on the upper surface side of the second semiconductor element 1243 and is bonded to the upper surface side (source electrode side) of the second semiconductor element 1243 via the bonding member 1242 . The extension portion 1241 a extends from the pad portion 1241 b in the positive direction of the y-axis and extends above the conductive member 1205 . A lower end surface of the extension portion 1241 a is joined to the upper surface of the conductive member 1205 via a joining member 1244 .

The conductive member 1201 is connected to a conductive member 1211 which functions as a drain pad of the first semiconductor element 1233 and functions as a drain terminal of the first semiconductor element 1233 . The conductive member 1202 is electrically connected to the gate electrode of the first semiconductor element 1233 and functions as the gate terminal of the first semiconductor element 1233 . The conductive member 1203 is electrically connected to the gate electrode of the second semiconductor element 1243 and functions as the gate terminal of the second semiconductor element 1243 . Square pins 1206 to 1209 function as non-potential terminals that are not connected to any electrodes of first semiconductor element 1233 and second semiconductor element 1243 .

Conductive member 1204 is coupled to conductive member 1212 that functions as a drain pad for second semiconductor element 1243 . Since the conductive member 1212 is electrically connected to the drain electrode of the second semiconductor element 1243 and the source electrode of the first semiconductor element 1233, the conductive member 1204 is connected to the source terminal of the first semiconductor element 1233 and the second semiconductor element. 1243 drain terminal. The conductive member 1205 is electrically connected to the conductive member 1241 that functions as the source pad of the second semiconductor element 1243 and functions as the drain terminal of the second semiconductor element 1243 .

As shown in FIGS. 26 to 29, a low stepped portion 1212a is provided at a position facing the conductive members 1201 and 1202 functioning as a gate terminal and a drain terminal with the first semiconductor element 1233 interposed therebetween in the y direction. On the lower surface side of the semiconductor module 1200, since the low step portion 1212a is covered with the resin mold 1220, there is an area where nothing is exposed on the surface of the resin mold 1220. FIG. This area corresponds to a common wiring area.

The common wiring area is a belt-like area extending substantially straight from one side of the resin mold 1220 where the conductive member 1211 is exposed to the other side. A conductive member 1211 is present in the common wiring region, and no conductive member other than the conductive member 1201 having the same potential as the conductive member 1211 is present. Therefore, the semiconductor module 1200 is applied as the first semiconductor modules 1020a and 1020b, the second semiconductor modules 1030a and 1030b, and the third semiconductor modules 1040a and 1040b shown in FIGS. When three semiconductor modules 1200 are arranged in the same direction in the y direction so as to be substantially orthogonal to the long side facing the , each of the three semiconductor modules extends straight along the y direction in a strip shape. A wiring area can be secured. The common wiring area is a substantially rectangular area extending in the y direction on the center line L10 side of the conductive member 1202 .

In the common wiring region, only conductive member 1211 and conductive member 1201 having the same potential as conductive member 1211 are exposed from resin mold 1220 . For this reason, in the common wiring area, a common wiring that connects the three conductive members 1211 respectively included in the three semiconductor modules arranged on both sides of the center line L10 is provided, thereby electrically connecting the three conductive members 1211 to each other. can be directly connected. The wiring width of the common wiring (the width in the x direction perpendicular to the y direction, which is the wiring direction) is wider than the wiring width (the width in the x direction) of the conductive members 1201 to 1203, and the width of the common wiring region in the x direction. has a width that allows common wiring to be installed. The conductive member 1211 corresponds to a common wiring electrode.

In the semiconductor module 1200, when connecting the common wiring to the common wiring electrode (conductive member 1211), the common wiring electrode is connected without electrically connecting to the non-common wiring electrodes (conductive members 1201 to 1205, 1212). Each component (a plurality of semiconductor elements, a plurality of conductive members, etc.) constituting the semiconductor module 1200 is arranged so that a common wiring can be installed from one side of the resin mold facing the other side to the other side on which the semiconductor module 1200 is exposed. ing. Therefore, as shown in FIGS. 24 and 25, three semiconductor modules 1200 arranged on both sides of the center line L10 can be electrically connected to each other on the mounting surface side of the semiconductor modules 1200. FIG. As a result, the wiring space on the side of the semiconductor module 1200 can be reduced, which contributes to the miniaturization of the wiring board 1001 . In addition, the wiring extending to the side of the semiconductor elements for connecting the three semiconductor elements can be omitted. As a result, the wiring area is reduced, the wiring resistance is reduced, and the heat generated by the wiring can be suppressed.

The semiconductor module 1200 may have a plurality of terminals for transmission and reception of drive signals for the transistors (more specifically, IGBTs) formed in the semiconductor elements 1233 and 1243 therein. When mounting the semiconductor module 1200 by soldering, even if one of the terminals related to transmission and reception of the transistor drive signal is disconnected due to thermal stress, the presence of the other terminals that are not disconnected prevents electrical connection failure. can be prevented. Moreover, it is preferable that the terminals related to the transmission and reception of the transistor drive signal are terminals other than the square pins 1206 to 1209 . Square pins 1206 to 1209 are preferably used for purposes other than terminals related to the main functions of semiconductor module 1200, such as large current paths and drive signals. Specifically, it can be suitably used as a non-potential terminal, a connection terminal dedicated to a noise prevention element, or a terminal dedicated to a protection element.

(Modification)
24 and 25, the first semiconductor module 1020a, the second semiconductor module 1030a, and the third semiconductor module 1040a are arranged in substantially the same position in the x direction and linearly in the y direction. Although the second semiconductor module 1030b and the third semiconductor module 1040b are also arranged linearly in the y direction at approximately the same position in the x direction, the present invention is not limited to this.

FIG. 30 shows an electronic device 1100 as an example of another electronic device provided with a plurality of sets of electrical connection wiring, motor connection wiring, and semiconductor modules arranged therebetween. In the electronic device 1100 shown in FIG. 30, similarly to the electronic device 1000, the electrical connection wires and the motor are arranged so as to be substantially symmetrical about a center line L11 that passes through substantially the center of the wiring board 1101 in the x direction and extends in the y direction. Two sets of connection wirings and semiconductor modules are provided.

The electronic device 1100 differs from the electronic device 1000 in the positions where the first semiconductor modules 1120a and 1120b, the second semiconductor modules 1130a and 1130b, the semiconductor modules 1129b and 1139b, and the semiconductor module 1139a are arranged. Due to the difference in the position of each semiconductor module, the electrical connection wirings 1150a and 1150b, the first motor connection wirings 1114a and 1114b, and the second motor connection wiring 1115a are different from the electronic device 1000 in shape. Since other configurations are the same as those of the electronic device 1000, the description is omitted by replacing the reference numbers in the 1000s with those in the 1100s.

In the electronic device 1100, the positions of the second semiconductor module 1130a and the third semiconductor module 1140a are substantially the same in the x direction, but the position of the first semiconductor module 1120a is different from that of the second semiconductor module 1130a and the third semiconductor module 1140a. , is shifted to the peripheral edge side of the wiring substrate 1101 (the positive direction side of the x-axis). In order to connect the first semiconductor module 1120a, the second semiconductor module 1130a, and the third semiconductor module 1140a, the shape of the electrical connection wiring 1150a protrudes to the peripheral side of the wiring board 1101 at the position of the first semiconductor module 1120a. It is different from the electrical connection wiring 1050a in that

In addition, the second semiconductor module 1130b and the third semiconductor module 1140b are substantially at the same position in the x-direction, but the position of the first semiconductor module 1120b is located further than the second semiconductor module 1130b and the third semiconductor module 1140b. It is shifted to the peripheral edge side (negative direction side of the x-axis) of the wiring board 1101 . In order to connect the first semiconductor module 1120b, the second semiconductor module 1130b, and the third semiconductor module 1140b, the shape of the electrical connection wiring 1150b protrudes to the peripheral side of the wiring substrate 1101 at the position of the first semiconductor module 1120b. It is different from the electrical connection wiring 1050b in that

Even if the first to third semiconductor modules connected by electrical connection wiring are not arranged in a straight line as in the electronic device 1100, the shape of the electrical connection wiring is deformed according to the positions of the first to third semiconductor modules. Thus, the first to third semiconductor modules can be electrically connected.

Note that the electronic devices 1000 and 1100 may further include a metal housing on the side facing the wiring board via the first to third semiconductor modules. For example, as shown in FIG. 31, an electronic device including a semiconductor module 1200, a wiring board 1250, and a housing 1270 may be configured. The semiconductor module 1200 is mounted on the wiring substrate 1250, and is mounted on the housing 1270 whose upper side (negative direction of the z-axis) shown in FIG. is placed downward. The upper surface of the housing 1270 is covered with the wiring board 1250 .

The wiring substrate 1250 includes a base portion 1251 , a wiring portion 1253 , and a resist portion 1252 provided around the wiring portion 1253 . A wiring portion 1253 and a resist portion 1252 are provided on the surface of the base material portion 1251 on the positive direction side of the z-axis to form a wiring pattern. A bonding member 1262 is provided in contact with the upper surface of the conductive wiring portion 1253 , and the semiconductor module 1200 is bonded to the wiring substrate 1250 via the bonding member 1262 . More specifically, conductive members 1211 and 1212 are joined and fixed to wiring portion 1253 via joining member 1262 . The joining member 1262 is made of solder material, for example. The resist portion 1252 is made of, for example, a resist resin material such as epoxy resin. The housing 1270 is made of metal such as aluminum.

As shown in FIG. 31, the non-mounting surface of the semiconductor module 1200, which is the surface facing the wiring board 1250, is the surface in the positive direction of the z-axis, and is covered with a resin mold 1220 made of a highly heat-dissipating resin material. Therefore, the conductive member is not exposed. A surface of the resin mold 1220 facing the wiring substrate 1250 is in contact with the housing 1270 . The depth of the housing 1270 (height of the inner wall surface in the z direction) substantially matches the total thickness (length in the z direction) of the semiconductor module 1200 and the bonding members 1261 and 1262 .

Since resin mold 1220 is made of a highly heat-dissipating resin material, heat generated in semiconductor module 1200 and wiring board 1250 can be dissipated through resin mold 1220 . Furthermore, since resin mold 1220 is in contact with housing 1270 , heat generated in semiconductor module 1200 and wiring board 1250 can be efficiently dissipated to housing 1270 via resin mold 1220 .

FIG. 32 shows an electronic device 183 as another example of a state in which the semiconductor module 1200 is mounted on the wiring board 1250. As shown in FIG. 31, the semiconductor module 1200 is mounted on the wiring substrate 1250, and is mounted on the upper side (z It is installed so that the positive direction side of the shaft is downward. The upper surface of the housing 1271 is covered with the wiring board 1250 .

In FIG. 32 , the semiconductor module 1200 is accommodated in the housing 1271 in a state in which the sides (x direction and y direction) and the bottom (positive direction of the z axis) are covered with the heat dissipation member 1280 . It is Housing 1271 is configured similarly to housing 1270, except that the depth is different. The depth of housing 1271 substantially matches the sum of the thicknesses of semiconductor module 1200 and bonding members 1261 and 1262 plus the thickness dg of heat dissipation member 1280 . Even if variations in the thicknesses of the semiconductor module 1200 and the bonding members 1261 and 1262 and the difference in depth from the housing 1271 occur due to design tolerances, the heat dissipation member 1280 fills the space between the housing 1271 and the semiconductor module 1200. By adjusting the thickness dg, a heat radiation path to the housing 1271 can be secured.

The heat radiating member 1280 is made of a gel material such as a resin material or a silicone material, or a high heat radiating material obtained by mixing an adhesive with a filler or the like for improving heat radiation. As the filler used for the high heat dissipation material, for example, a composite oxide material with high thermal conductivity such as alumina is selected. The thermal conductivity of the heat radiating member 1280 can be adjusted by adjusting the type and filling rate of the filler.

The heat dissipation member 1280 is preferably adjusted to have a thermal conductivity equal to or higher than that of the resin mold 1220 . For example, if the thermal conductivity of the resin mold 1220 is km and the thermal conductivity of the heat radiating member 1280 is kg, km≧2W/(m·K) is preferable, and km≧3W/(m·K). is particularly preferred. Further, it is sufficient if kg≧km, and preferably kg>km. Conventionally, in a semiconductor module in which electrodes are exposed on the non-mounting surface, there is no need to increase the thermal conductivity of the resin mold due to the concept of dissipating heat from the exposed electrodes, and the thermal conductivity is as low as less than 1 W/(mK). In contrast, by using the resin mold 1220 having high thermal conductivity as in the present embodiment, even if the electrodes of the semiconductor module 1200 are covered with the resin mold 1220, the heat generated in the semiconductor module 1200 and the like can be prevented from It has become possible to dissipate heat efficiently. Furthermore, by making the thermal conductivities km and kg higher than the thermal conductivity with respect to the wiring substrate 1250 side (for example, the thermal conductivity of the resist portion 1252), the housings 1270 and 1271 can be more efficiently operated. It can dissipate heat well. The thermal conductivity of the housings 1270 and 1271 made of aluminum is approximately 100 to 300 W/(m·K), which is significantly high relative to km and kg.

In addition, since the non-mounting surface of the semiconductor module 1200 is covered with the resin mold 1220 and the conductive member functioning as the electrode is not exposed, the heat dissipating member 1280 is less effective than the semiconductor module in which the electrode is exposed on the non-mounting surface. The thickness dg can be reduced. The resin mold 1220 has higher insulation than the heat dissipation member 1280, and the thickness required to ensure insulation is small. For this reason, the distance between the lower surface of the electrodes (conductive members 1231 and 1241 in this embodiment) on the non-mounting surface side of the semiconductor module 1200 and the upper surface of the housing 1271 is the same as that of the semiconductor module where the electrodes are exposed on the non-mounting surface. can be shortened by comparison. As a result, according to the semiconductor module 1200, the mounting portion can be made smaller than before.

31 and 32, the semiconductor module 1200 according to the seventh embodiment is used to describe the mounting state. The separated semiconductor module can be replaced with a semiconductor module 1200 shown in FIGS.

The plurality of semiconductor elements included in the semiconductor module may be semiconductor elements having the same size and shape as shown in FIGS. 3 and 4, or different semiconductor elements as shown in FIGS. may be

The plurality of semiconductor elements may be arranged substantially parallel to the adjacent semiconductor elements in the same orientation as the adjacent semiconductor elements. Alternatively, the plurality of semiconductor elements may be arranged substantially point-symmetrically with the adjacent semiconductor elements in the opposite direction to the adjacent semiconductor elements. Further, the semiconductor module includes a first electrode (for example, a source electrode) of a first semiconductor element and a second electrode of a second semiconductor element arranged adjacent to the first semiconductor element among the plurality of semiconductor elements. (eg drain electrode).

Furthermore, a plurality of semiconductor elements may be stacked via bonding conductive members. For example, as briefly explained with reference to FIG. 8, two semiconductor elements functioning as the upper arm and the lower arm of each phase of the inverter circuit are mounted on the semiconductor module in a state of being stacked in the thickness direction of the wiring board. may be accommodated. For example, the first to third semiconductor modules may be configured as the semiconductor module 1300 shown in FIGS. 33 to 36 when including two semiconductor elements functioning as upper and lower arms of the inverter circuit. The semiconductor module 1300 includes an upper semiconductor element 1360 and a lower semiconductor element 1370, a resin mold 1330 integrally sealing the upper semiconductor element 1360 and the lower semiconductor element 13700, and external terminals 1301-1304 and 1311-1314. . The x-axis direction and the y-axis direction shown in FIGS. 33 to 36 are the sides of the semiconductor module 1300, and the xy plane direction is the plane direction of the semiconductor module 1300. As shown in FIG. The z-axis direction is a vertical direction perpendicular to the planar direction.

As shown in FIG. 33, the semiconductor module 1300 has an external appearance in which eight external terminals 1301 to 1304 and 1311 to 1314 protrude in the y-axis direction from a resin mold 1330 having a substantially rectangular shape when viewed from above. ing. The external terminals 1301 to 1304 are arranged in this order from the positive direction of the x-axis to the negative direction in the positive direction (first direction) of the y-axis, which is the side of the resin mold 1330, and the y-axis direction is the longitudinal direction. is extended as The external terminals 1311 to 1314 are arranged in this order from the positive direction to the negative direction of the x-axis in the negative direction of the y-axis, which is the second direction opposite to the first direction with the resin mold 1330 interposed therebetween. It extends with the axial direction as its longitudinal direction.

As shown in FIGS. 33 to 36, in a resin mold 1330, an upper semiconductor element 1360 and a lower semiconductor element 1370 are laminated in the z-axis direction and sealed together. The upper semiconductor element 1360 and the lower semiconductor element 1370 are semiconductor elements having the same structure, shape, size, etc., and are substantially rectangular when viewed from above. When the upper semiconductor element 1360 and the lower semiconductor element 1370 are stacked in the same direction without being shifted in the plane direction, the corners 1361 and 1371, the corners 1362 and 1372, the corners 1363 and 1373, and the corners 1364 and 1374 are formed. are substantially at the same position in the planar direction.

Upper semiconductor device 1360 and lower semiconductor device 1370 are vertical insulated gate semiconductor devices having the device structure as shown in FIG. More specifically, it is a power MOSFET.

The upper semiconductor element 1360 and the lower semiconductor element 1370 are arranged such that the source electrode 71 is directed upward (positive direction of the z-axis) and the drain electrode is directed downward (negative direction of the z-axis). They are stacked with the lower semiconductor element 1370 facing downward. As shown in FIGS. 33 to 36, the upper semiconductor element 1360 is arranged so that its longitudinal direction when viewed from above is the y-axis direction, and the lower semiconductor element 1370 is arranged such that its longitudinal direction is the x-axis direction when viewed from above. are arranged so that That is, when viewed from the top, the upper semiconductor element 1360 is arranged in a direction rotated counterclockwise by approximately 90° with respect to the lower semiconductor element 1370 about the vertical direction.

As shown in FIGS. 33 to 36, the semiconductor module 1300 includes a first conductive member 1321, a second conductive member 1323, an upper semiconductor element 1360, a third conductive member 1324, and a fourth conductive member stacked in this order from above. 1325 , a lower semiconductor element 1370 and electrode pads 1322 . Semiconductor module 1300 further includes conductive bonding plates 1305 , 1306 , 1315 and 1316 at the same positions as electrode pads 1322 in the vertical direction. The joint plate 1305 is formed integrally with the external terminal 1301 . The joint plate 1306 is integrally formed with the external terminals 1302-1304. The joint plate 1315 is formed integrally with the external terminal 1311 . The joint plate 1316 is integrally formed with the external terminals 1312-1314. The external terminals 1301 to 1304, 1311 to 1314, the joint plates 1305, 1306, 1315, 1316, and the electrode pads 1322 are built into the lead frame. Semiconductor module 1300 further comprises conductive gate connection members 1307 , 1317 .

The second conductive member 1323 corresponds to a source electrode formed on the upper surface side of the upper semiconductor element 1360 . The second conductive member 1323 has a shape in which one of the four corners of a rectangle is notched when viewed from above, and the gate pad of the upper semiconductor element 1360 is provided in this notched portion. . The upper surface of the second conductive member 1323 is joined to the lower surface of the first conductive member 1321 via solder. The gate pad of the upper semiconductor element 1360 and the gate pad of the lower semiconductor element 1370 are provided at substantially the same position when individually viewed from above. More specifically, the gate pad of upper semiconductor element 1360 is located near corner 1364 and the gate pad of lower semiconductor element 1370 is located near corner 1374 .

The first conductive member 1321 has a substantially L shape when viewed from above, and extends to a position above the joining plate 1306 in the positive direction of the y-axis. The first conductive member 1321 has a connecting portion 1321 a extending downward to a position above the joint plate 1306 and reaching the joint plate 1306 . The lower surface of the connecting portion 1321a is joined to the upper surface of the joining plate 1306 via solder. Thereby, the source electrode of the upper semiconductor element 1360 is electrically connected to the external terminals 1302-1304.

The lower surface side of the upper semiconductor element 1360 is the drain electrode side and is joined to the upper surface of the third conductive member 1324 via solder. The fourth conductive member 1325 corresponds to a source electrode formed on the upper surface side of the lower semiconductor element 20 . The fourth conductive member 1325 is joined to the third conductive member 1324 via solder.

The third conductive member 1324 has a substantially L-shape when viewed from above, and extends to a position above the joining plate 1316 in the negative direction of the y-axis. The third conductive member 1324 has a connection portion 1324 a extending downward to a position above the joint plate 1316 and reaching the joint plate 1316 . The lower surface of the connecting portion 1324a is joined to the upper surface of the joining plate 1316 via solder. Thereby, the drain electrode of the upper semiconductor element 1360 and the source electrode of the lower semiconductor element 1370 are electrically connected to the external terminals 1312-1314. The first conductive member 1321 and the third conductive member 1324 are so-called clips, but instead of clips, wire bonding, wire ribbons, or the like may be used.

The second conductive member 1323 and the fourth conductive member 1325 are source electrodes of the upper semiconductor element 1360 and the lower semiconductor element 1370, respectively, and have the same shape and size. Similar to the positional relationship between the upper semiconductor element 1360 and the lower semiconductor element 1370, the second conductive member 1323 is rotated approximately 90 degrees counterclockwise about the vertical direction with respect to the fourth conductive member 1325. are placed. By arranging in this way, the position of the gate pad of the upper semiconductor element 1360 is at the angle of the positive direction of the x-axis and the positive direction of the y-axis, whereas the position of the gate pad of the lower semiconductor element 1370 is the angle of the positive direction of the x-axis and the negative direction of the y-axis.

The lower surface side of the lower semiconductor element 1370 is the drain electrode and is joined to the electrode pad 1322 via solder. As shown in FIG. 33( b ), the electrode pad 1322 is exposed on the lower surface of the resin mold 1330 and electrically connected to the drain electrode of the lower semiconductor element 20 . The drain electrode of the lower semiconductor element 20 is not electrically connected to any of the external terminals 1301-1304, 1311-1314.

First conductive member 1321 , second conductive member 1323 , third conductive member 1324 , and fourth conductive member 1325 are thicker than electrode pad 1322 . Since each conductive member is thick and has a corresponding weight, it is possible to suppress the displacement of the upper semiconductor element 1360 and the lower semiconductor element 1370 which are stacked in contact with any of the conductive members. That is, since each conductive member is thicker than the electrode pad 1322 , it is possible to suppress positional deviation of each component inside the resin mold 1330 of the semiconductor module 1300 .

The gate connection member 1307 has a columnar portion extending vertically on the upper surface of the bonding plate 1305 and a beam extending from the columnar portion in the negative direction of the x-axis and the y-axis to the gate pad on the upper surface of the upper semiconductor element 1360 . and a shape. The lower surface of the columnar portion is joined to the upper surface of the joining plate 1305 via solder. The beam is electrically connected to the gate electrode via the gate pad in the upper semiconductor element 1360 . Thereby, the gate electrode of the upper semiconductor element 1360 is electrically connected to the external terminal 1301 .

The gate connection member 1317 has a columnar portion extending vertically on the upper surface of the bonding plate 1315 and a beam portion extending from the columnar portion in the positive direction of the y-axis to the gate pad on the upper surface of the lower semiconductor element 20 . The lower surface of the columnar portion is joined to the upper surface of the joining plate 1315 via solder. The beam is electrically connected to the gate electrode in the lower semiconductor element 20 via the gate pad. Thereby, the gate electrode of the lower semiconductor element 20 is electrically connected to the external terminal 1311 . The gate connection members 1307 and 1317 are so-called gate clips, but other than clips, wire bonding, wire ribbons, or the like may be used.

The external terminal 1301 is a first gate terminal electrically connected to the gate electrode of the upper semiconductor element 1360 . The external terminal 1311 is a second gate terminal electrically connected to the gate electrode 75 of the lower semiconductor element 1370 . The external terminals 1302 - 1304 are first source terminals electrically connected to the source electrodes of the upper semiconductor element 1360 . The external terminals 1312 - 1314 are the second source terminals electrically connected to the source electrode of the lower semiconductor element 1370 and the first drain terminals electrically connected to the drain electrode of the upper semiconductor element 1360 .

According to each of the above embodiments, the following effects can be obtained.

The electronic devices 100, 200, 300, 400, 500, 600, 610, 700, 800, 900 are applied to electric motors, have wiring boards (for example, wiring board 101), and Electrical connection wiring (for example, electrical connection wiring 150) to be connected, and a plurality of motor connection wirings (for example, first motor connection wiring 114 and second a motor connection wiring 115, a third motor connection wiring 116), and a plurality of semiconductor modules (for example, a first semiconductor module 120, a second semiconductor module 130, a third and a semiconductor module 140).

A plurality of semiconductor modules includes a plurality of semiconductor elements (eg, semiconductor elements 123b and 124b) and a resin mold (eg, resin mold 125) that integrally seals the plurality of semiconductor elements. Therefore, in the semiconductor elements arranged on the wiring board, the wiring for connecting them can be simplified.

Also, the plurality of semiconductor modules are arranged on the electrical connection wiring or at a position on the peripheral side thereof and on the central side of the motor connection wiring. At least some electrodes of the plurality of semiconductor modules are mounted on the electrical connection wiring. At least a portion of the electrodes of the plurality of semiconductor modules are mounted on the electrical connection wiring, so that at least a portion of the semiconductor modules and the electrical connection wiring can be overlapped, and the installation area of the wiring around the semiconductor module can be reduced. can be made Therefore, it is possible to reduce the installation area of the wires from the plurality of motor connection wires to the electrical connection wires and the wiring installed around the semiconductor module.

In the electronic device described above, the semiconductor module and the computing unit that controls the operation of the electric motor may be mounted on the same wiring board. By arranging the drive circuit composed of the semiconductor module and the control circuit of the arithmetic unit on the same substrate, in addition to the effect of miniaturization of the product, noise suppression effect can be achieved by shortening the wiring of the high-frequency signal line. can be obtained.

In the above electronic device, the wiring board may be a laminated board having a wiring layer in the inner layer of the board. For example, by arranging the wiring that constitutes the power supply path on the positive electrode side on the substrate surface and the wiring that constitutes the power supply path on the negative electrode side on the inner layer of the substrate, the power supply of the positive electrode side and the negative electrode side can be arranged on the same layer of the wiring board. Since there is no need to arrange both paths, the size of the board can be reduced.

The above electronic device may have the following configurations. For example, as in the electronic device 100, a plurality of semiconductor modules have external terminals (for example, external terminals 121 and 122) that are electrically connected to a plurality of semiconductor elements protrude from the resin mold in a direction that corresponds to a plurality of motor connections. It is preferable that they are arranged so as to be substantially parallel to the wiring direction of the wiring.

Further, for example, like the electronic devices 100 and 200, the plurality of semiconductor modules may include a plurality of semiconductor elements arranged substantially parallel or substantially perpendicular to the wiring direction of the plurality of motor connection wirings. preferable. Alternatively, like the electronic device 300, the plurality of semiconductor modules preferably include a plurality of semiconductor elements stacked in the thickness direction of the wiring board.

Also, like the electronic devices 200 and 300, the electrical connection wiring preferably extends substantially linearly, and at least one of the plurality of semiconductor modules is arranged on the electrical connection wiring.

Electronic devices 100, 200, 300, 400, 500, 600, 610, 700, 800, 900 can be configured to be applicable to inverter circuits or H-bridge circuits. For example, like the electronic devices 100, 200, 300, 500, 600, 610, 700, 800, and 900, a plurality of semiconductor modules are included in the inverter circuit as semiconductor modules including upper and lower arms for each phase of the inverter circuit. may apply. Further, for example, like the electronic device 400, the plurality of semiconductor modules may be applied to the inverter circuit as semiconductor modules including the entire upper arm or the entire lower arm of each phase of the inverter circuit.

A plurality of semiconductor modules applied to the inverter circuit as semiconductor modules including upper and lower arms of each phase of the inverter circuit are stacked in the thickness direction of the wiring substrate, for example, like the semiconductor module 1300. The semiconductor module may include a semiconductor element as the lower arm and a semiconductor element as the lower arm.

Further, as shown in electronic devices 600, 610, 1000, and 1100, the wiring board is provided with a plurality of three-phase inverter circuits in which semiconductor modules are applied as upper and lower arms of each phase. There may be.

Further, as shown in a wiring board 1250 , the wiring board may include a wiring portion 1253 on which a semiconductor module is installed and a resist portion 1252 provided around the wiring portion 1253 . In this case, the resin mold 1220 mounted on the wiring board 1250 preferably has higher thermal conductivity than the resist portion 1252 . Heat dissipation from the wiring board 1250 and the semiconductor module 1200 can be promoted through the resin mold 1220 .

Also, as shown in the semiconductor module 1200 , the surface of the semiconductor module 1200 facing the wiring substrate 1250 may be covered with a resin mold 1220 . Like the semiconductor module 1200, it can be suitably used when arranged between the wiring board 1250 and the housings 1270 and 1271 installed on the side facing the wiring board 1250. FIG. Specifically, heat generated in the semiconductor module or the wiring board can be dissipated to the side of the housing via the resin mold by, for example, arranging the resin mold and the housing so as to be in contact with each other. Furthermore, the resin mold may be configured to be in contact with the housing via a heat dissipation member arranged between the housing. In this case, the thermal conductivity of the heat radiating member is preferably equal to or higher than the thermal conductivity of the resin mold.

Each of the electronic devices described above can be suitably used for applications mounted on the electric power steering system 80, and can contribute to miniaturization and promotion of heat dissipation in the drive circuit and the like.

Further, the semiconductor module may be provided with corner pins 1206 to 1209, which are non-potential terminals, at least part of the four corners of the resin mold, which is substantially rectangular in plan view. Furthermore, it is preferable that the semiconductor module has a plurality of terminals other than square pins as terminals used for transmitting and receiving drive signals for the semiconductor elements. Even if one of the plurality of terminals is disconnected, it is possible to prevent the transmission and reception of the drive signal from being disabled due to the presence of other terminals that are not disconnected. The square pins are preferably used for purposes other than terminals related to the main function of the semiconductor module.

In each of the above-described embodiments, a trench gate type MOSFET in which an n-channel is formed by applying a gate voltage has been exemplified and explained as the element structure of the semiconductor element, but the present invention is not limited to this. For example, it may be a planar gate type, a p-channel type in which the p-type is replaced with an n-type in FIG. 5, an insulated gate bipolar transistor (IGBT), or a reverse conducting IGBT (RC- IGBT). When the semiconductor element is an IGBT, the emitter electrode corresponds to the first electrode and the collector electrode corresponds to the second electrode. An external terminal electrically connected to the emitter electrode corresponds to the first terminal, and an external terminal electrically connected to the collector electrode corresponds to the second terminal.

Also, in the drive circuit shown in FIG. 6 and the like, each switch may be a voltage-controlled semiconductor switching element such as an IGBT instead of a MOSFET. If an IGBT without a freewheeling diode is used as each switch, it is preferable to provide a freewheeling diode for each switch. Specifically, for example, a freewheeling diode may be connected in antiparallel to each switch, or a reverse conducting IGBT (RC-IGBT) in which a freewheeling diode is built in the same semiconductor substrate as the IGBT or the like as each switch. may be used.

100,200,300,400,500,600,610,700,800,900,1000,1100...electronic device, 101,201,301,401,501,601,701,801,901,1001,1101...wiring Substrates 114, 214, 314, 414, 514, 614a, 614b, 614c, 714, 814a, 814b, 914a, 914b, 914c, 1014a, 1014b, 1114a, 1114b... First motor connection wirings 115, 215, 315, 415, 515, 615a, 615b, 615c, 715, 815a, 815b, 915a, 915b, 915c, 1015a, 1015b, 1115a, 1115b . 616c, 1016a, 1016b, 1116a, 1116b... third motor connection wiring 123b, 124b, 323b, 324b, 1233, 1243, 1360, 1370... semiconductor element 125, 325, 1220, 1330... resin mold 120, 220, 320, 420, 520, 620a, 620b, 620c, 720, 820a, 820b, 920a, 920b, 920c, 1020, 1020b, 1120a, 1120b . , 630c, 730, 830a, 830b, 930a, 930b, 930c, 1030, 1030b, 1130a, 1130b . Third semiconductor module, 150, 250, 350, 450, 550, 650a, 650b, 650c, 750, 850a, 850b, 950, 1050a, 1050b, 1150a, 1150b... electrical connection wiring

Claims (20)

An electronic device (100, 200, 300, 400, 500, 600, 610, 700, 800, 900, 1000, 1100) applied to an electric motor,
a wiring board (101, 201, 301, 401, 501, 601, 701, 801, 901, 1001, 1101);
Electrical connection wiring (150, 250, 350, 450, 550, 650a, 650b, 650c, 750, 850a, 850b, 950, 1050a, 1050b, 1150a, 1150b) arranged substantially in the center of the wiring board and connected to a power supply When,
A plurality of motor connection wires (114 to 116, 214 to 216, 314 to 316, 414 to 416, 514 to 516, 614a to 616c, 714, 715, 814a-815b, 914a-915c, 1014a-1016c, 1114a-1116c) and
a plurality of semiconductor elements (123b, 124b, 323b, 324b, 1233, 1243, 1360, 1370) and a resin mold (125, 325, 1220, 1330) for integrally sealing the plurality of semiconductor elements semiconductor modules (120, 220, 320, 420, 520, 620a to 620c, 720, 820a, 820b, 920a to 920c, 1020a to 1020c, 1120a to 1120c, 130, 230, 330, 430, 530, 630a to 630c, and
The plurality of semiconductor modules are arranged on the electrical connection wiring or at a position on the peripheral side of the electrical connection wiring and on the central side of the motor connection wiring,
An electronic device, wherein electrodes of at least some of the plurality of semiconductor modules are mounted on the electrical connection wiring. 2. The electronic device according to claim 1, wherein the semiconductor module and arithmetic units (1060a, 1060b) for controlling the operation of the electric motor are mounted on the wiring board. 3. The electronic device according to claim 1, wherein the wiring board is a laminated board having wiring layers (363, 365) in the inner layers of the board. The plurality of semiconductor modules are arranged such that the direction in which the external terminals electrically connected to the plurality of semiconductor elements protrude from the resin mold is substantially parallel to the wiring direction of the plurality of motor connection wirings. The electronic device according to any one of claims 1 to 3. The electronic device according to any one of claims 1 to 3, wherein the plurality of semiconductor modules include the plurality of semiconductor elements arranged substantially parallel or substantially perpendicular to the wiring direction of the plurality of motor connection wirings. 6. The electronic device according to claim 1, wherein the plurality of semiconductor modules include the plurality of semiconductor elements stacked in the thickness direction of the wiring board. The electronic device according to any one of claims 1 to 6, wherein the electrical connection wiring extends substantially linearly, and at least one of the plurality of semiconductor modules is arranged on the electrical connection wiring. . The electronic device according to any one of claims 1 to 7, wherein the electronic device is applied to an inverter circuit or an H-bridge circuit. 9. The semiconductor module according to any one of claims 1 to 8, wherein square pins (1206 to 1209), which are non-potential terminals, are provided on at least a part of four corners of the resin mold, which is substantially rectangular in plan view. 1. The electronic device according to claim 1. 10. The electronic device according to claim 9, wherein the semiconductor module includes a plurality of terminals other than the square pins as terminals used for transmitting and receiving drive signals of the semiconductor element. 11. The electronic device according to claim 9, wherein the square pin is used for a purpose other than a terminal related to the main function of the semiconductor module. 9. The electronic device according to claim 1, wherein the plurality of semiconductor modules are applied to the inverter circuit as semiconductor modules including an upper arm and a lower arm of each phase of the inverter circuit. 9. The electronic device according to claim 1, wherein the plurality of semiconductor modules are applied to the inverter circuit as semiconductor modules including an entire upper arm or an entire lower arm of each phase of the inverter circuit. The plurality of semiconductor modules applied to the inverter circuit as semiconductor modules including an upper arm and a lower arm for each phase of the inverter circuit include semiconductor elements as the upper arms stacked in the thickness direction of the wiring substrate. 13. The electronic device according to claim 12, comprising a semiconductor element as said lower arm. 15. The electronic device according to claim 14, wherein the wiring board is provided with a plurality of three-phase inverter circuits in which the semiconductor modules are applied as upper and lower arms of each phase. The wiring board (1250) includes a wiring portion (1253) on which the semiconductor module is installed, and a resist portion (1252) provided around the wiring portion,
The electronic device according to any one of claims 1 to 15, wherein the resin mold has higher thermal conductivity than the resist portion. 17. The electronic device according to claim 1, wherein a surface of said semiconductor module facing said wiring board is covered with said resin mold. further comprising a housing (1270, 1271) on the side facing the wiring board across the semiconductor module;
18. The electronic device according to claim 16, wherein heat generated in said semiconductor module or said wiring board is dissipated to said housing side through said resin mold. The resin mold is in contact with the housing via a heat dissipation member (1280) disposed between the housing,
19. The electronic device according to claim 18, wherein the thermal conductivity of the heat radiating member is equal to or higher than the thermal conductivity of the resin mold. The electronic device according to any one of claims 1 to 19, installed in an electric power steering system (80).

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